CN106935577A - Light-emitting diode assembly - Google Patents
Light-emitting diode assembly Download PDFInfo
- Publication number
- CN106935577A CN106935577A CN201710081096.2A CN201710081096A CN106935577A CN 106935577 A CN106935577 A CN 106935577A CN 201710081096 A CN201710081096 A CN 201710081096A CN 106935577 A CN106935577 A CN 106935577A
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- Prior art keywords
- emitting diode
- light
- light emitting
- diode assembly
- substrate
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The present invention discloses a kind of light-emitting diode assembly, including bearing substrate, with first surface and the second surface relative to first surface；First light emitting diode matrix, with multiple first light emitting diodes, is arranged on first surface in upside-down mounting mode；Second light emitting diode matrix, with multiple second light emitting diodes, is arranged on second surface in upside-down mounting mode；At least one first conductive connection structure, is arranged on first surface；And, at least one second conductive connection structure is arranged on second surface；Wherein, at least two first light emitting diodes engage to form electrical connection with the first conductive connection structure, and at least two second light emitting diodes engage to form electrical connection with the second conductive connection structure.
Description
The application is the applying date for the Chinese invention of on March 22nd, 2011 and entitled " light-emitting diode assembly " is special
The divisional application of profit application 201110069130.7.
Technical field
The present invention relates to a kind of light-emitting diode assembly, more particularly, to a kind of flipped light emitting two with high light-emitting efficiency
Pole pipe array apparatus structure.
Background technology
The principle of luminosity and structure of light emitting diode (LED) and conventional light source are simultaneously differed, with power consumption is low, the element longevity
Life is long, need not the warm lamp time, the advantages of reaction speed is fast, along with its small volume, vibration resistance, be adapted to volume production, easily coordinating should
Minimum or array element is made of demand, application commercially is rather extensive.For example, optical display, laser two
Pole pipe, traffic sign, data memory device, communicator, lighting device and medical treatment device etc..
Traditional array LED 1, as shown in figure 1, including insulated substrate 10, multiple light emitting diodes 12
It is formed on insulated substrate 10, including p-type semiconductor layer 121, luminescent layer 122 and n-type semiconductor layer 123.Due to substrate 10
It is non-conductive, therefore each light emitting diode 12 can be made after forming groove 14 by etching between multiple light emitting diodes 12
It is insulated from each other, multiple light emitting diodes 12 are etched to n-type semiconductor layer 123 by part again in addition, partly led respectively at N-shaped
First electrode 18 and second electrode 16 are formed in body 123 exposed region of layer and p-type semiconductor layer 121.Led by metal again
The first electrode 18 and second electrode 16 of the multiple light emitting diodes 12 of the selectivity connection of line 19 so that multiple light emitting diodes
The circuit of serial or parallel connection is formed between unit 12.
However, when the circuit carried out by plain conductor 19 between light emitting diode 12 is linked, due to light emitting diode
Unit 12 and between the difference of height of groove 14 away from quite big, easily produce wire bond bad or broken string when plain conductor 19 is formed
Problem, and then influence element yield.
To solve the above problems, light emitting diode can further combined with bearing substrate (secondary carrier, sub-mount),
Light-emitting device is formed in the way of upside-down mounting.The light-emitting device includes the carrying base with an at least conductive connection structure (circuit)
Plate；An at least solder (solder) is located on above-mentioned bearing substrate, and above-mentioned light emitting diode is fixed on into carrying by this solder
On substrate, then the electronic pads that light emitting diode is electrically connected with conductive connection structure (circuit)；Wherein, above-mentioned bearing substrate can
To be that lead frame (lead frame) or large scale inlay substrate (mounting substrate), to facilitate the electricity of light-emitting device
Circuit planning simultaneously improves its radiating effect.
The content of the invention
The present invention provides a kind of light-emitting diode assembly, especially with respect to a kind of flipped light emitting two with high light-emitting efficiency
Pole pipe array apparatus structure.
Embodiments of the invention provide a kind of light-emitting diode assembly, including bearing substrate, with first surface with it is relative
In the second surface of first surface；First light emitting diode matrix, with multiple first light emitting diodes, in upside-down mounting mode
It is arranged on first surface；Second light emitting diode matrix, with multiple second light emitting diodes, is set in upside-down mounting mode
In on second surface；Wherein, at least one first conductive connection structure, is arranged on first surface；And, at least one second is conductive
Connecting structure, is arranged on second surface；Wherein, at least two first light emitting diodes connect with the first conductive connection structure
Conjunction forms electrical connection, and at least two second light emitting diodes engage to form electrical connection with the second conductive connection structure.
Another embodiment of the present invention provides a kind of light-emitting diode assembly, including bearing substrate, with first surface；The
One light emitting diode matrix, with multiple first light emitting diodes, is arranged on first surface in upside-down mounting mode；First life
Substrate long, with second surface, the first light emitting diode matrix is formed on second surface；And first conductive connection structure,
It is arranged on first surface, at least two first light emitting diodes to be formed electrically through being engaged with the first conductive connection structure
Link；Wherein, first surface and the surface that second surface is roughening.
Brief description of the drawings
Fig. 1 is structure chart, shows traditional array formula light-emitting diode assembly structure chart；
Fig. 2 is structure chart, the light-emitting diode assembly structure chart of the display foundation embodiment of the present invention；
Fig. 3 is structure chart, the light-emitting diode assembly structure chart of display foundation another embodiment of the present invention.
Description of reference numerals
1：Traditional array formula light-emitting diode assembly；
2、3：Light-emitting diode assembly；
10：Substrate；
12、23、23’、35：Light emitting diode；
14：Groove；
16：Second electrode；
18：First electrode；
19：Plain conductor；
21、22、31：Growth substrate；
25、38、251、252：Catoptric arrangement；
28、28’、36：Electrode structure；
27、37：Bearing substrate；
32、33：Surface；
34、271：First surface；
39、291、292、293：Conductive connection structure；
272：Second surface；
121、231、231’、351：P-type semiconductor layer；
122、232、232’、352：Luminescent layer；
123、233、233’、353：N-type semiconductor layer.
Specific embodiment
Hereinafter coordinate brief description of the drawings various embodiments of the present invention.First, as shown in Fig. 2 the first embodiment of the present invention is carried
For a kind of light-emitting diode assembly 2 with two-sided inverted structure.Light-emitting diode assembly 2 has bearing substrate 27, carries base
Plate 27 has first surface 271 and second surface 272, and wherein first surface 271 is relative with second surface 272.Bearing substrate is simultaneously
Single substrate is not limited to, can also be the composite support substrate combined by multiple substrates or various different materials.Example
Such as：Bearing substrate 27 can include two the first bearing substrates being bonded with each other and the second bearing substrate (not shown), hold respectively
Carry the first light emitting diode 23 and the second light emitting diode 23 '.The luminous efficiency overall in order to increase light-emitting device,
Catoptric arrangement 251 or 252 can be respectively selectively formed on first surface 271 and second surface 272, for example, can be metal
Reflecting layer or Distributed Bragg Reflection layer (DBR, distributed Bragg reflector) etc.；Or, first surface
271 surfaces that roughening can also be respectively selectively formed with second surface 272.Forming the mode of roughening structure for example can be
The modes such as Wet-type etching, chemical etching, ion beam bombardment, but not limited to this.And it is formed at first surface 271 and second surface
Roughening structure on 272, its coarsening rate (surface roughness, RMS) also dependent on the demand of light extraction, through adjustment etching solution
The parameters such as species, chemical etching time, ion beam bombardment intensity and time and it is identical or different.Additionally, for device entirety
Electrical connection design, the conductive layer of patterning is respectively provided with first surface 271 and second surface 272, that is, conductive link
Structure 291 and 292, and also alternative setting conductive connection structure 293 between first surface 271 and second surface 272, are used to
Electrical components on the surface of electrical connection two.On first surface 271, the multiple being formed on single growth substrate 21 is provided with
First light emitting diode 23, the first light emitting diode 23 has two in the present embodiment, but is not limited with this number.
Wherein, each first light emitting diode 23 includes p-type semiconductor layer 231, luminescent layer 232 and n-type semiconductor layer
233, by way of upside-down mounting, by the electrode structure 28 on these first light emitting diodes 23 and first surface 271
Conductive connection structure 291 is relative to be engaged, and link has also been optionally included between electrode structure 28 and conductive connection structure 291
Solder (not shown).In the same manner, on a second surface, multiple second be formed on single growth substrate 22 is provided with to light
Diode 23 ', the second light emitting diode 23 ' has two in the present embodiment, but is not limited with this number, and first
Surface 271 is also optional with the species of the second light emitting diode 23 ' with the first light emitting diode 23 on second surface 272
Selecting property is changed, and is not required to identical.Wherein, each second light emitting diode 23 ' includes p-type semiconductor layer 231 ', luminescent layer
232 ' and n-type semiconductor layer 233 ', by way of upside-down mounting, by the electrode knot on these second light emitting diodes 23 '
The engagement relative with the conductive connection structure 292 on second surface 272 of structure 26, between electrode structure 28 ' and conductive connection structure 292
Also it is optionally included with the solder (not shown) of link.In addition, in order to increase flip-over type light emitting diode 23
Luminous efficiency with 23 ', also optionally makes anti-in the side of the neighbouring bearing substrate of p-type semiconductor layer 231 and/or 231 '
Structure 25 is penetrated, in the same manner, for example, can be metallic reflector or Distributed Bragg Reflection layer (DBR, distributed
Bragg reflector) etc..In the present embodiment, wherein, the material of growth substrate may include but be not limited to germanium (germanium,
Ge), GaAs (gallium arsenide, GaAs), indium phosphide (indium phosphide, InP), sapphire
(sapphire), carborundum (silicon carbide), silicon (silicon), lithia aluminium (lithium aluminum
oxide,LiAlO2), zinc oxide (zinc oxide, ZnO), gallium nitride (gallium nitride, GaN), aluminium nitride
(aluminum nitride) etc..Additionally, through conductive connection structure 291, two first luminous two on first surface 271
Pole pipe unit 23 forms electrical connection each other, through conductive connection structure 292, two second luminous two on second surface 272
Pole pipe unit 23 ' forms electrical connection each other, through conductive connection structure 293, more causes two first on first surface 271
Light emitting diode 23 forms electrical connection with two the second light emitting diodes 23 ' on second surface 272.However, actual
On implementation method be not limited thereto, the conductive connection structure 291,292 on first surface 271 and/or second surface 272 can
Think the arrangement of array, and the first light emitting diode 23 and/or the first light emitting diode 23 ' can also be corresponding
It is the arrangement of array.Additionally, after forming light-emitting diode assembly 2, view apparatus overall structure demand is different, growth substrate 21
And/or growth substrate 22 can be removed optionally；And it is arranged on first surface 271 and/or the light emitting diode of second surface 272
Unit tube core is also not required to identical, can come from the various light emitting diode tube cores of different growth substrates.
Then, Fig. 3 is refer to, Fig. 3 is the second embodiment of the present invention, is provided as a kind of the luminous of one side inverted structure
Diode apparatus 3.Light-emitting diode assembly 3 has bearing substrate 37, and bearing substrate 37 has first surface 34, in first surface
Conductive connection structure 39 is also included on 34, is used to make the electrical components of the top of conductive connection structure 39 electrically be connected to each other
Knot.On first surface 34, multiple first light emitting diodes 35 being formed on single growth substrate 31 are provided with.Its
In, the material of growth substrate may include but be not limited to germanium (germanium, Ge), GaAs (gallium arsenide,
GaAs), indium phosphide (indium phosphide, InP), sapphire (sapphire), carborundum (silicon carbide),
Silicon (silicon), lithia aluminium (lithium aluminum oxide, LiAlO2), zinc oxide (zinc oxide, ZnO), nitrogen
Change gallium (gallium nitride, GaN), aluminium nitride (aluminum nitride) etc..In the present embodiment, first luminous two
Pole pipe unit 35 has two, but is not limited with this number.Wherein, each first light emitting diode 35 includes p-type half
Conductor layer 351, luminescent layer 352 and n-type semiconductor layer 353, by way of upside-down mounting, by these the first light emitting diode lists
The engagement relative with the conductive connection structure 39 on first surface 34 of electrode structure 36 in unit 35, electrode structure 36 links with conductive
The solder (not shown) of link is also optionally included between structure 39.In the same manner, in order to increase, device is overall to light
Efficiency, p-type semiconductor layer 351 can be formed selectively catoptric arrangement 38 adjacent to the side of bearing substrate 37, and first surface
Catoptric arrangement (not shown) can also be formed selectively on 34, for example, can be metallic reflector or Distributed Bragg Reflection
Layer (DBR, distributed Bragg reflector) etc..Additionally, except being formed on the first surface 34 of bearing substrate 37
Outside roughening structure, the surface 32 and/or 33 of growth substrate 31 also can be carried out suitable roughening, be further added by the effect of light extraction
Rate.The mode for forming roughening structure can be for example the modes such as Wet-type etching, chemical etching, ion beam bombardment, but be not limited to
This.And the roughening structure on first surface 34 and growth substrate surface 32 and/or 33 is formed at, its coarsening rate (rough surface
Degree, RMS) also dependent on the demand of light extraction, through species, chemical etching time, the ion beam bombardment intensity of adjustment etching solution
With the parameter such as time and it is identical or different.Additionally, the conductive connection structure 39 on first surface 37 can be the arrangement of array,
And light emitting diode 35 relative can also should be the arrangement of array.Additionally, after forming light-emitting diode assembly 2, depending on
Device overall structure demand is different, and growth substrate 31 can be removed optionally；And it is arranged on luminous two on first surface 34
Pole pipe unit tube core is also not required to identical, can come from the various light emitting diode tube cores of different growth substrates.
In sum, the present invention proposes a kind of inverted light-emitting diode (LED) device, by reflecting layer and different coarsening rates
Coarse surface is set, and light-emitting device is had light extraction efficiency high.Additionally, the conductive connection structure by being arranged at substrate surface
Carry out the electrical connection of light-emitting component, it is possible to resolve the bad root problem of traditional array formula light emitting diode wire bond.More enter
One step, light-emitting device may extend to the semiconductor light-emitting apparatus of two-sided upside-down mounting, the angle enlargement for making device luminous, and increasing device can
It is used in the elasticity of different field.
Each embodiment cited by the present invention is only used to illustrate the present invention, and is not used to limit the scope of the present invention.It is any
People's any modification apparent easy to know made for the present invention or change all do not depart from spirit and scope of the invention.
Claims (10)
1. a kind of light-emitting diode assembly, including：
First substrate, with first surface and the second surface relative to the first surface；
First light emitting diode, including one the 3rd surface and the 4th surface relative to the 3rd surface, this first lights
Diode is arranged on the first surface, and adjacent to the first surface, the 3rd surface is away from first table on the 4th surface
Face；And
First conductive connection structure, is arranged at the first surface, and first light emitting diode is passed through with first conduction even
Junction structure engages to form electrical connection；
Wherein, the roughening on the first surface and the surface that the 3rd surface is roughening, and the 3rd surface and the first surface
Degree is identical or differs.
2. light-emitting diode assembly as claimed in claim 1, also includes：Second light emitting diode is arranged at first table
On face.
3. light-emitting diode assembly as claimed in claim 1, also includes：
Second substrate, with the 5th surface, first light emitting diode is arranged on the 5th surface, and this first luminous two
Pole pipe unit is located between the second substrate and the first substrate.
4. light-emitting diode assembly as claimed in claim 2, wherein second light emitting diode include one the 6th surface,
6th surface is the surface of roughening.
5. light-emitting diode assembly as claimed in claim 1, also includes：
Catoptric arrangement, is arranged on the first surface and/or the second surface.
6. light-emitting diode assembly as claimed in claim 1, wherein,
The light emitting diode includes：
P-type semiconductor layer；
N-type semiconductor layer；And
Luminescent layer, is formed at the p-type semiconductor layer and the n-type semiconductor interlayer.
7. light-emitting diode assembly as claimed in claim 6, also includes：
Catoptric arrangement, is arranged on the surface of the p-type semiconductor layer.
8. light-emitting diode assembly as claimed in claim 6, wherein,
The n-type semiconductor layer includes the 3rd surface.
9. the light-emitting diode assembly as described in claim 5 or 7, wherein, the catoptric arrangement is metallic reflector and/or distribution
Formula Bragg reflecting layer.
10. a kind of light-emitting diode assembly, including：
First substrate, with first surface and the second surface relative to the first surface；And
First light emitting diode, is arranged on the first surface in upside-down mounting mode；
Wherein, it is provided with the first conductive connection structure on the first surface；
Wherein, first light emitting diode engages to form electrical connection with first conductive connection structure,
The wherein first surface and second surface is the surface of roughening, and the first surface and the second surface roughening journey
Degree is identical or differs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710081096.2A CN106935577A (en) | 2011-03-22 | 2011-03-22 | Light-emitting diode assembly |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710081096.2A CN106935577A (en) | 2011-03-22 | 2011-03-22 | Light-emitting diode assembly |
| CN201110069130.7A CN102693970B (en) | 2011-03-22 | 2011-03-22 | Light emitting diode apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110069130.7A Division CN102693970B (en) | 2011-03-22 | 2011-03-22 | Light emitting diode apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106935577A true CN106935577A (en) | 2017-07-07 |
Family
ID=46859326
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710081096.2A Pending CN106935577A (en) | 2011-03-22 | 2011-03-22 | Light-emitting diode assembly |
| CN201110069130.7A Active CN102693970B (en) | 2011-03-22 | 2011-03-22 | Light emitting diode apparatus |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110069130.7A Active CN102693970B (en) | 2011-03-22 | 2011-03-22 | Light emitting diode apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN106935577A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409466B (en) * | 2014-12-08 | 2017-08-18 | 厦门市三安光电科技有限公司 | Upside-down mounting baroluminescence device and preparation method thereof |
| CN104900789A (en) * | 2015-06-19 | 2015-09-09 | 佛山市国星半导体技术有限公司 | Flip LED chip and preparing method thereof |
| CN106783816A (en) * | 2015-11-24 | 2017-05-31 | 林锦源 | LED array structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2867600Y (en) * | 2005-12-09 | 2007-02-07 | 璨圆光电股份有限公司 | Luminous diode package structure |
| CN101859789A (en) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | Alternating current light-emitting device with effect of increasing light extraction efficiency and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6833628B2 (en) * | 2002-12-17 | 2004-12-21 | Delphi Technologies, Inc. | Mutli-chip module |
| KR100634307B1 (en) * | 2005-08-10 | 2006-10-16 | 서울옵토디바이스주식회사 | Light-emitting device and method of manufacturing the same |
| TWI495084B (en) * | 2009-07-07 | 2015-08-01 | Epistar Corp | Light-emitting device |
-
2011
- 2011-03-22 CN CN201710081096.2A patent/CN106935577A/en active Pending
- 2011-03-22 CN CN201110069130.7A patent/CN102693970B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2867600Y (en) * | 2005-12-09 | 2007-02-07 | 璨圆光电股份有限公司 | Luminous diode package structure |
| CN101859789A (en) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | Alternating current light-emitting device with effect of increasing light extraction efficiency and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102693970A (en) | 2012-09-26 |
| CN102693970B (en) | 2017-04-12 |
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