CN110190172A - A kind of six face light extracting LED microdevice of fluorescence ceramics substrate and its manufacturing method - Google Patents
A kind of six face light extracting LED microdevice of fluorescence ceramics substrate and its manufacturing method Download PDFInfo
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- CN110190172A CN110190172A CN201910364625.9A CN201910364625A CN110190172A CN 110190172 A CN110190172 A CN 110190172A CN 201910364625 A CN201910364625 A CN 201910364625A CN 110190172 A CN110190172 A CN 110190172A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 77
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 28
- 239000000843 powder Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 11
- 239000000084 colloidal system Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 229920002050 silicone resin Polymers 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000006071 cream Substances 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of six face light extracting LED microdevice of fluorescence ceramics substrate and its manufacturing methods.The LED microdevice includes: fluorescence ceramics substrate, electrode through-hole, the first conductive layer, insulating layer, LED chip, the second conductive layer and fluorescent glue；2 electrode through-holes are set on fluorescence ceramics substrate, and 2 the first conductive layers pass through corresponding electrode through-hole with 2 the second conductive layers respectively and connect；Insulating layer is equipped between 2 the first conductive layers；Insulating layer is equipped with around each second conductive layer；The insulating layer upper surface between 2 the first conductive layer upper surfaces and 2 the first conductive layers is arranged in LED chip；Fluorescent glue is deposited on the upper surface of fluorescence ceramics substrate and the upper surface of LED chip.LED microdevice provided by the invention, bottom use fluorescence ceramics, welded stress problem when can be avoided the application of miniature LED component, while the luminescent layer as bottom, can bottom go out light, improve the light efficiency of device very well.
Description
Technical field
The invention belongs to LED component fields；Present invention relates particularly to a kind of six miniature devices of face light extracting LED of fluorescence ceramics substrate
Part and its manufacturing method.
Background technique
21 century energy problem has become a critical problem.Wherein illuminate occupied in the energy it is very big by one
A ratio, wherein LED obtains huge development due to the advantages of its low energy consumption.It is miniature as LED technology development is compressed with cost
LED component power density is continuously improved.LED is not only used widely in traditional lighting field at present, is particularly subject to TV, shows
Just there is rapid growth in the favor of the backlight products such as display screen and mobile phone, the market demand.
But the growth of the high photosynthetic efficiency high density demand with miniature LED, 5 traditional faces have gone out light and other light extraction modes
It can not further be improved and go out light, light efficiency can not be promoted further.Major part technology mainly takes different light knots out at present
Structure and doping scattering particles promote light efficiency, but these new technologies have been all made of the mode that 5 faces go out light, and bottom goes out light
On rely primarily on reflection to be utilized, this causes miniature LED's to go out that light loss is very big, this light extraction mode is difficult to so that light efficiency has
Bigger promotion.Therefore the effective emergent ray for utilizing bottom, such as realizing miniature six face light extraction mode of LED component etc. is to have
Effect promotes the big effective way of light efficiency one.
Summary of the invention
In order to overcome the shortcomings of the prior art, the object of the present invention is to provide a kind of six faces of fluorescence ceramics substrate to go out light
LED microdevice and its manufacturing method.
The purpose of the present invention is realized at least through one of following technical solution.
The present invention be promote LED component go out light, provide a kind of six face light extracting LED microdevice of fluorescence ceramics substrate and
Its manufacturing method.The LED microdevice light extraction mode is that six faces go out light, and structure includes that LED chip is (blue from inside to outside
Light), surrounding and upper surface luminescent layer and base fluorescent ceramic substrate.The LED microdevice can pass through surrounding and upper table
Face luminescent layer and base fluorescent ceramic substrate go out light.
Manufacturing method provided by the invention, which mainly comprises the steps that, prepares fluorescence ceramics substrate, makes on ceramic substrate
Reserve line places LED chip on substrate, and corresponding electrode is processed on substrate, is packaged to chip, and cutting forms six
Face light extracting LED microdevice.
Six face light extracting LED microdevice of a kind of fluorescence ceramics substrate provided by the invention is six face light extracting LED microdevices,
Internal excitation light source is LED blue chip, and chip surrounding and upper surface are wrapped up by fluorescent glue, and base substrate is fluorescence ceramics base
Plate.
Six face light extracting LED microdevice of a kind of fluorescence ceramics substrate provided by the invention, comprising: fluorescence ceramics substrate, electricity
Pole through-hole, the first conductive layer, insulating layer, LED chip, the second conductive layer and fluorescent glue；2 are arranged on the fluorescence ceramics substrate
Electrode through-hole, 2 the first conductive layers pass through corresponding electrode through-hole with 2 the second conductive layers respectively and connect；2 the first conductive layers
Between be equipped with insulating layer；Insulating layer is equipped with around each second conductive layer (insulating layer separates two the second conductive layers)；
The insulating layer upper surface between 2 the first conductive layer upper surfaces and 2 the first conductive layers is arranged in LED chip；The fluorescent glue
It is deposited on the upper surface of fluorescence ceramics substrate and the upper surface of LED chip.
Further, the fluorescent glue includes scattering particles.
Manufacturing method provided by the invention comprising the steps of: prepare the fluorescence ceramics substrate with a thickness of 0.4-1mm；?
Route is prepared on ceramic substrate；It places LED chip (blue light)；Corresponding electrode is processed on substrate using metallization process；
Chip is packaged；To substrate carry out cutting formed single 6 face go out light LED component (according to chip chamber reserve spacing set
Cut label is set, and cuts out V-groove in advance, is then cut according to the V type groove of pre-cut, single fluorescence ceramics substrate six is obtained
Face light extracting LED microdevice).
A kind of method preparing above-mentioned six face light extracting LED microdevice of fluorescence ceramics substrate provided by the invention, including such as
Lower step:
(S1) it is punched from top to bottom in the upper surface of fluorescence ceramics substrate, forms electrode through-hole；
(S2) the first conductive layer is laid in the upper surface of fluorescence ceramics substrate；It is two neighboring being connect with the same LED chip
Insulating layer is scratched between first conductive layer, and conductive layer connects with electrode through-hole；
(S3) two positive and negative anodes pins of LED chip are mounted on two adjacent first conductive layers that insulating layer separates, make LED
Chip is connect with two adjacent the first conductive layers and insulating layer；
(S4) metalized is carried out to step (S1) the electrode through-hole, is then laid with the in the lower surface of fluorescence ceramics substrate
Two conductive layers, the second conductive layer are connect by the electrode through-hole of metalized with the first conductive layer；
(S5) fluorescent glue is deposited on to the upper surface of fluorescence ceramics substrate and the upper surface of LED chip, the device after being assembled；
(S6) the fluorescent glue upper surface between adjacent LED chip is cut, and is formed V-shaped groove, is erected from top to bottom along V-shaped groove
Vertical cut cuts fluorescent glue and fluorescence ceramics substrate, and adjacent LED device is cut open, obtains six face of fluorescence ceramics substrate and goes out light
LED microdevice.
Further, step (S1) the fluorescence ceramics substrate is fluorescence ceramics made of sintering, the fluorescence ceramics packet
Include YAG-AlN, YAG-AlO system fluorescence ceramics；The diameter of the electrode through-hole is 100-500um.
Further, the material of step (S2) first conductive layer and step (S4) described second conductive layer be tin cream or
Silver；Step (S2) and the material of step (S4) described insulating layer are one of epoxy resin, silica gel and silicone resin.
Further, the mode of step (S4) described metalized includes plating, tin filling, vapor deposition and sputtering etc..
Further, step (S5) fluorescent glue is that fluorescent powder, colloid and scattering particles are uniformly mixed and are formed；It is described
Colloid is more than one of silica gel, silicone resin, epoxy resin and PMMA；The fluorescent powder includes red fluorescence powder, yellow fluorescence
Powder and green emitting phosphor more than one；The scattering particles is oxide powder and zinc or alumina powder.
Further, the distance between described adjacent LED chip of step (S6) is 0.5-1mm.
Further, the depth of step (S6) described V-groove is 100-300 um.
Further, in step (S6) the six face light extracting LED microdevice of fluorescence ceramics substrate, fluorescent glue is wrapped in
LED chip is wrapped in the fluorescent glue of LED chip surrounding with a thickness of 0.1-0.3mm.Fluorescent glue wraps chip, including forward and backward,
The left and right and face of upper surface 5, and the colloid thickness for being wrapped in surrounding is maintained at 0.1-0.3mm.
For LED component traditional manufacturing technology and light extraction mode, the present invention is reserved in the fluorescence ceramics on piece of sintering
Electrode prepares route, LED blue chip and is packaged in placement, is cut into the LED microdevice that single six faces go out light.It adopts
Use fluorescence ceramics as substrate, first is that being to eliminate the thermal stress between LED chip and welding substrate, second is that being so that bottom
Portion goes out light and has achieved the purpose that six faces go out light, to effectively promote the light out of LED component.
Compared with prior art, the invention has the advantages that and the utility model has the advantages that
(1) six face light extracting LED microdevice of fluorescence ceramics substrate provided by the invention, bottom are fluorescence ceramics substrate, can
So that LED microdevice bottom can also go out light, light-out effect can be promoted very well.
(2) manufacturing method provided by the invention can be reduced effectively and be welded using fluorescence ceramics substrate as transition zone
Thermal expansion stress in journey improves the stability of LED microdevice.
Detailed description of the invention
Fig. 1 is six face light extracting LED microdevice manufacturing flow chart of fluorescence ceramics substrate provided by the invention；
Fig. 2 is the fluorescence ceramics substrate schematic diagram of preparation；
Fig. 3 is that LED chip position view is installed on fluorescence ceramics substrate；
Fig. 4 is the metallization schematic diagram of electrode through-hole；
Fig. 5 is with fluorescent glue packaging LED chips schematic diagram；
Fig. 6 is the V-groove distribution schematic diagram of default cutting；
Fig. 7 is the luminous schematic diagram of single six face light extracting LED microdevice of fluorescence ceramics substrate；
Wherein, 1 is fluorescence ceramics substrate；2 be electrode through-hole；3 be the first conductive layer；4 be insulating layer；5 be LED chip；6 be another
One LED chip；7 be the second conductive layer；8 be fluorescent glue；9 be scattering particles；10 be V-groove.
Specific embodiment
Specific implementation of the invention is described further below in conjunction with attached drawing and example, but implementation and protection of the invention
It is without being limited thereto.If it is existing to be that those skilled in the art can refer to it is noted that there is the not special process of detailed description below
Technology realize or understand.Reagents or instruments used without specified manufacturer, be considered as can by it is commercially available be commercially available it is normal
Advise product.
Embodiment 1
The manufacturing flow chart of six face light extracting LED device of fluorescence ceramics substrate is as shown in Figure 1, the manufacturing method includes following step
It is rapid:
S1. prepare fluorescence ceramics substrate: the schematic diagram of fluorescence ceramics substrate 1 is as shown in Fig. 2, be prepared for fluorescence ceramics in embodiment
Substrate (YAG-GaN fluorescence ceramics), is formed using YAG powder and AlN powder sintering, and fluorescence ceramics are with a thickness of 0.5mm, and in fluorescence
Ceramic substrate presets electrode through-hole 2, and through-hole diameter is preferably 200um.
S2. route is prepared: as shown in Fig. 2, the first conductive layer 3 is laid on one of surface of fluorescence ceramics substrate 1,
And conductive layer is connect with reserved electrode through-hole 2, scratches a layer insulating 4 in advance between the conductive layer of adjacent through-holes connection；
Wherein the first conductive layer 3 is tin cream or silver using material, and the material that insulating layer 4 uses is preferably epoxy resin.
S3. chip placement: as shown in figure 3, needing two positive and negative anodes pins of LED chip 5 being mounted on the first conductive layer 3
On, certain cutting distance is retained between the LED chip 5 of placement and another LED chip 6, cutting distance is preferably 0.5mm.
S4. machined electrode: as shown in figure 4, using techniques such as plating, tin filling, vapor deposition or sputterings to through-hole progress metal
Change, and is laid with the second conductive layer 7, the through-hole and upper table that the second conductive layer 7 passes through metallization in fluorescence ceramics substrate lower surface
The first conductive layer of face 3 connects, and is equipped with insulating layer around each second conductive layer.
S5. chip package: as shown in figure 5, fluorescent glue 8 wraps chip, including front, rear, left and right and upper surface 5
Face, and the colloid thickness for being wrapped in surrounding is maintained at 0.2mm.The fluorescent glue 8 used is fluorescent powder, colloid and scattering particles 9
It is uniformly mixed formation；Colloid is more than one of silica gel, silicone resin, epoxy resin and PMMA, wherein mixed fluorescent powder packet
Containing red fluorescence powder, yellow fluorescent powder and green emitting phosphor more than one, scattering particles be oxide powder and zinc or alumina powder.This
The preferred colloid of case is silica gel, and fluorescent powder uses yellow fluorescent powder, and scattering particles is zinc oxide.
S6. it cuts chip unit: cut label being arranged according to the spacing that chip chamber is reserved, and cuts out V-groove 10 in advance, it is described
V-groove depth be 200 um；It is cut (referring to shown in Fig. 6) according to the V type groove of pre-cut, obtains single fluorescence ceramics
Six face light extracting LED microdevice of substrate (the six face light extracting LED microdevice of fluorescence ceramics substrate).
The manufacturing method provided through the invention, fluorescence ceramics substrate LED component (the fluorescence ceramics substrate produced
Six face light extracting LED microdevices) comprising the coating of five face of fluorescent glue and base fluorescent ceramic substrate；The fluorescence ceramics energy
Enough to go out light from bottom, remaining 5 face goes out light by fluorescent glue surface, enables six face of LED component to go out light, can be lifted out well
Light effect, illumination effect are as shown in Figure 7.
Above embodiments are only preferrred embodiment of the present invention, for explaining only the invention, are not intended to limit the present invention, this
Field technical staff should belong to guarantor of the invention without departing from change made under spirit of the invention, replacement, modification etc.
Protect range.
Claims (10)
1. a kind of six face light extracting LED microdevice of fluorescence ceramics substrate characterized by comprising fluorescence ceramics substrate, electrode are logical
Hole, the first conductive layer, insulating layer, LED chip, the second conductive layer and fluorescent glue；2 electrodes are set on the fluorescence ceramics substrate
Through-hole, 2 the first conductive layers pass through corresponding electrode through-hole with 2 the second conductive layers respectively and connect；Between 2 the first conductive layers
Equipped with insulating layer；Insulating layer is equipped with around each second conductive layer；Table is arranged on 2 the first conductive layers in LED chip
Insulating layer upper surface between face and 2 the first conductive layers；The fluorescent glue is deposited on upper surface and the LED of fluorescence ceramics substrate
The upper surface of chip.
2. six face light extracting LED microdevice of fluorescence ceramics substrate according to claim 1, which is characterized in that the fluorescence
Glue includes scattering particles.
3. a kind of method for preparing any one of claim 1-2 six face light extracting LED microdevice of fluorescence ceramics substrate, special
Sign is, includes the following steps:
(S1) it is punched from top to bottom in the upper surface of fluorescence ceramics substrate, forms electrode through-hole；
(S2) upper surface of fluorescence ceramics substrate is laid with the first conductive layer around electrode through-hole, keeps the first conductive layer and electrode logical
Hole connects；Insulating layer is scratched between two neighboring first conductive layer that the same LED chip is connect；
(S3) two positive and negative anodes pins of LED chip are mounted on two adjacent first conductive layers that insulating layer separates, make LED
Chip is connect with two adjacent the first conductive layers and insulating layer；
(S4) metalized is carried out to step (S1) the electrode through-hole, is then laid with the in the lower surface of fluorescence ceramics substrate
Two conductive layers, the second conductive layer are connect by the electrode through-hole of metalized with the first conductive layer；
(S5) fluorescent glue is deposited on to the upper surface of fluorescence ceramics substrate and the upper surface of LED chip, the device after being assembled；
(S6) the fluorescent glue upper surface between adjacent LED chip is cut, and is formed V-shaped groove, is erected from top to bottom along V-shaped groove
Vertical cut cuts fluorescent glue and fluorescence ceramics substrate, and adjacent LED device is cut open, obtains six face of fluorescence ceramics substrate and goes out light
LED microdevice.
4. manufacturing method according to claim 3, which is characterized in that step (S1) the fluorescence ceramics substrate be sintering and
At fluorescence ceramics, the fluorescence ceramics include YAG-AlN, YAG-AlO system fluorescence ceramics；The diameter of the electrode through-hole is
100-500um。
5. manufacturing method according to claim 3, which is characterized in that step (S2) first conductive layer and step (S4)
The material of second conductive layer is tin cream or silver；The material of step (S2) and step (S4) described insulating layer be epoxy resin,
One of silica gel and silicone resin.
6. manufacturing method according to claim 3, which is characterized in that the mode of step (S4) described metalized includes
Plating, tin filling, vapor deposition and sputtering.
7. manufacturing method according to claim 3, which is characterized in that step (S5) fluorescent glue is fluorescent powder, colloid
And scattering particles is uniformly mixed and is formed；The colloid is more than one of silica gel, silicone resin, epoxy resin and PMMA；It is described
Fluorescent powder include red fluorescence powder, yellow fluorescent powder and green emitting phosphor more than one；The scattering particles be oxide powder and zinc or
Alumina powder.
8. manufacturing method according to claim 3, which is characterized in that between step (S6) the adjacent LED chip away from
From for 0.5-1mm.
9. manufacturing method according to claim 3, which is characterized in that the depth of step (S6) described V-groove is 100-300
um。
10. manufacturing method according to claim 3, which is characterized in that step (S6) six face of fluorescence ceramics substrate goes out
In light LED microdevice, fluorescent glue is wrapped in LED chip, is wrapped in the fluorescent glue of LED chip surrounding with a thickness of 0.1-0.3mm.
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| CN201910364625.9A CN110190172A (en) | 2019-05-01 | 2019-05-01 | A kind of six face light extracting LED microdevice of fluorescence ceramics substrate and its manufacturing method |
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| CN201910364625.9A CN110190172A (en) | 2019-05-01 | 2019-05-01 | A kind of six face light extracting LED microdevice of fluorescence ceramics substrate and its manufacturing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130457A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | Light source plate, preparation method thereof and display |
| CN113991004A (en) * | 2021-10-26 | 2022-01-28 | 东莞市中麒光电技术有限公司 | LED substrate manufacturing method, LED substrate, LED device manufacturing method and LED device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367346A (en) * | 2013-07-12 | 2013-10-23 | 惠州伟志电子有限公司 | Novel high-power LED light source and implementation method thereof |
| CN105374911A (en) * | 2014-08-29 | 2016-03-02 | 佛山市国星光电股份有限公司 | Novel thin film substrate LED device and manufacturing method thereof |
| US20180277725A1 (en) * | 2015-05-29 | 2018-09-27 | Hongli Zhihui Group Co.,Ltd. | Method of packaging csp led and csp led |
| CN208570660U (en) * | 2018-04-18 | 2019-03-01 | 广州东有电子科技有限公司 | The LED light source structure of reduction LED chip junction temperature based on COB encapsulation |
| CN210429864U (en) * | 2019-05-01 | 2020-04-28 | 华南理工大学 | Six light-emitting LED micro device of fluorescent ceramic substrate |
-
2019
- 2019-05-01 CN CN201910364625.9A patent/CN110190172A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367346A (en) * | 2013-07-12 | 2013-10-23 | 惠州伟志电子有限公司 | Novel high-power LED light source and implementation method thereof |
| CN105374911A (en) * | 2014-08-29 | 2016-03-02 | 佛山市国星光电股份有限公司 | Novel thin film substrate LED device and manufacturing method thereof |
| US20180277725A1 (en) * | 2015-05-29 | 2018-09-27 | Hongli Zhihui Group Co.,Ltd. | Method of packaging csp led and csp led |
| CN208570660U (en) * | 2018-04-18 | 2019-03-01 | 广州东有电子科技有限公司 | The LED light source structure of reduction LED chip junction temperature based on COB encapsulation |
| CN210429864U (en) * | 2019-05-01 | 2020-04-28 | 华南理工大学 | Six light-emitting LED micro device of fluorescent ceramic substrate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130457A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | Light source plate, preparation method thereof and display |
| CN113991004A (en) * | 2021-10-26 | 2022-01-28 | 东莞市中麒光电技术有限公司 | LED substrate manufacturing method, LED substrate, LED device manufacturing method and LED device |
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