CN2717026Y - Multi-chip packaging structure LED - Google Patents
Multi-chip packaging structure LED Download PDFInfo
- Publication number
- CN2717026Y CN2717026Y CNU2004200468329U CN200420046832U CN2717026Y CN 2717026 Y CN2717026 Y CN 2717026Y CN U2004200468329 U CNU2004200468329 U CN U2004200468329U CN 200420046832 U CN200420046832 U CN 200420046832U CN 2717026 Y CN2717026 Y CN 2717026Y
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- recessed cup
- packaging structure
- cup
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- Led Device Packages (AREA)
Abstract
The utility model discloses a luminous diode with a multi-chip packaging structure, which comprises a metal base plate and a ceramic base plate, wherein, the base plates are provided with more than one concave cup; more than one diode core is put in each concave cup; after electrodes of the diode cores are connected by gold wires, transparent jelly is filled in the concave cups. The packaged luminous diode can effectively improve the drive current, and has the characteristics of good heat dispersion, high luminous flux, compact structure and high degree of integration.
Description
Technical field
The utility model relates to a kind of light-emitting diode, concretely, relates to a kind of light-emitting diode of multi-chip structure encapsulation.
Background technology
Along with development of semiconductor, the purposes of light-emitting diode more and more widely, also improves constantly the requirement of light-emitting diode luminance progressively to ambient light illumination, decorative lighting and general lighting development from initial indication.The tradition light-emitting diode is because brightness is low, need a lot of light-emitting diodes of combination under the situation of high brightness requiring to use, the volume that not only takies is big, and because traditional light-emitting diode pin is thin, thermal resistance is big, the heat that LED core produces can't conduct from the luminous tube tube core fast, and the accumulation of heat will have influence on the luminous efficiency and the brightness of light-emitting diode, and quicken the decay of tube core.
The brightness that the light-emitting diode of employing multichip packaging structure can effectively improve light-emitting diode increases light-emitting diode application integration degree, reduces to use shared space.Chinese patent publication number CN1417868A, open day on May 4th, 2003, invention and created name is the multichip packaging structure of light-emitting diode chip for backlight unit, this application case discloses a kind of multichip packaging structure of light-emitting diode chip for backlight unit, be that a plurality of light-emitting diode chip for backlight unit are disposed in the printed circuit board (PCB), with colloid light-emitting diode chip for backlight unit be fixed on the printed circuit board (PCB) again.Claim statement according to this invention, in this invention except that comprising printed substrate with flat bottom surface and concave cups, also comprise a conductor layer, a heat-conducting layer and a conductive plunger at least, conductor layer is positioned at the surface of recessed cup, heat-conducting layer and recessed cup lay respectively at the two sides of printed substrate, conductive plunger through this printed substrate and be connected in this conductor layer and this heat-conducting layer between.The deficiency of this invention is, the transmission of heat by and through this printed substrate and be connected in conductor layer and heat-conducting layer between conductive plunger, to be delivered on the heat-conducting layer again from the heat that light-emitting diode is delivered to conductor layer, again by heat-conducting layer with heat transferred in environment, because the size of conductive plunger is limited, the speed of its thermal capacity and transmission heat is limited, and the heat that light-emitting diode produces can not in time be delivered on the heat-conducting layer, can produce a large amount of thermal accumlations on light-emitting diode; Owing to conductive plunger will be run through printed substrate and pass through conductor layer, need be in the hole that the bottom processing of recessed cup can make conductive plunger run through, and conductive plunger inserted in this hole, like this operate in complex process in the batch process, be that the precision that guarantees processing needs special-purpose anchor clamps and erecting tools; Because at the bottom machining hole of recessed cup and conductive plunger is installed, and tube core also is to be placed in recessed cup bottom, laying of tube core will influence each other with conductive plunger; Only adopt colloid that light-emitting diode chip for backlight unit is fixed on the recessed cup and will give kind of a tape difficulty.
Summary of the invention
The purpose of this utility model provides a kind of integrated level height, brightness height, perfect heat-dissipating, processing technology multichip packaging structure light-emitting diode simple, easy to use.
The utility model comprises a metal substrate or ceramic substrate, electrode, tube core, transparent jelly, have a recessed cup on the substrate at least, there is layer of metal coating each recessed cup side and bottom surface, and two distribution of electrodes are in each recessed cup rim of a cup edge or recessed glass of bottom surface, the bottom surface of each recessed cup is laid a tube core at least, and transparent jelly is filled whole recessed cup and formed exiting surface at rim of a cup; The side coating of recessed cup is silver or magnesium, and bottom surface coating is gold, and the side of recessed cup is inverted cone shape or parabolic shape, and the bottom surface is the plane; The formed exiting surface of transparent jelly is smooth flat or sphere; A plurality of tube cores in same recessed cup can be connected, also can be in parallel.
The effect that the utility model can be realized is: the integrated level height of (1) light-emitting diode, a plurality of LED core are encapsulated on the substrate, have effectively reduced to use shared space; (2) have good performance of heat dissipation, the good and entire plate of metal substrate and ceramic substrate heat dispersion all has heat sinking function, has increased area of dissipation, has strengthened the dependability and the stability of radiating effect and light-emitting diode; (3) have good optically focused and reverberation effect, the coating of recessed cup side and bottom surface can fully reflect the light of LED core directive side and bottom surface, and the recessed cup of inverted cone shape or parabolic shape can effectively be assembled reverberation; (4) processing technology is simple, no matter is the making of substrate or the encapsulation of light-emitting diode, can utilize prior art and equipment to finish.
Description of drawings
The utility model is described in further detail below in conjunction with the drawings and specific embodiments:
Fig. 1 is the disclosed multichip packaging structure schematic diagram of CN1417868A application case for patent publication No.;
Fig. 2 is for being the first embodiment schematic diagram of the present utility model;
Fig. 3 is for being the second embodiment schematic diagram of the present utility model;
Fig. 4 is for being the 3rd embodiment schematic diagram of the present utility model.
Specific embodiment
As Fig. 2-shown in Figure 4, multichip packaging structure light-emitting diode of the present utility model comprises substrate 1, electrode 2, and tube core 6, transparent jelly 4, substrate 1 is ceramic substrate or metal substrate, during for metal substrate, can adopt aluminium sheet or copper coin; Having a recessed cup 7, the recessed cup of Fig. 2 on the substrate 1 at least is one, and the recessed cup of Fig. 3 Fig. 4 is a plurality of; Recessed cup 7 sides are inverted cone shape or parabolic shape, and the bottom surface is the plane; There is layer of metal coating 8 each recessed cup side and bottom surface, and the coating 8 of recessed cup side is silver or magnesium, and bottom surface coating 8 is gold; Two electrodes 2 are distributed in each recessed cup 7 rim of a cup edge or recessed cup 7 bottom surfaces, and at least one tube core 6 is placed in the bottom surface of each recessed cup, and a plurality of tube cores 6 in same recessed cup can be connected, also can be in parallel, connect by bonding line 3 therebetween.Transparent jelly 4 is filled whole recessed cup 7 and is formed exiting surface 5 at rim of a cup; This exiting surface 5 is smooth flat (as Fig. 4) or sphere (as Fig. 2, Fig. 3).
The making of the utility model light-emitting diode can be divided into two parts, and first is the making of substrate, and second portion is the encapsulation of light-emitting diode.The making of metal substrate can be adopted following method: plate-making, and the size and the position of pressing substrate make circuit and electrode on metallic plate; Recessed cup is made in boring, the relevant position of the metallic plate after plate-making; Make coating, the bottom surface plated with gold at recessed cup plates silver or magnesium in the side; Blanking cuts into required substrate with sheet metal.The making of ceramic substrate also can be adopted the same manufacture method of metal substrate, and the method that also can adopt multi-layer ceramics to burn is altogether made.The adoptable method of the encapsulation of light-emitting diode: tube core is installed, can tube core is bonded at recessed cup bottom or adopts the method for welding that tube core is welded on the recessed cup with adhesive; Kind of line couples together with gold thread or aluminum steel electrode and the corresponding electrode with tube core; Injecting glue injects transparent jelly in recessed cup, to tube core and gold thread or aluminum steel plays a protective role and form exiting surface in the exit.Make white light emitting diode and before injecting glue, also may need to be coated with fluorescent material.
The main distinction of second embodiment and first embodiment is that bottom surface coating in the connection in series-parallel process of tube core, has the part bonding line directly to beat on coating simultaneously also as conductive layer.
The main distinction of the 3rd embodiment and first embodiment is that electrode is positioned at the bottom surface of recessed cup, and exiting surface is a smooth flat.
The utility model also has other execution mode, and for example, partial electrode is positioned at the bottom surface of recessed cup, and partial electrode is positioned at recessed cup rim of a cup edge in addition; A plurality of tube cores in the same recessed cup can series, parallel or connection in series-parallel combination; Exiting surface after the encapsulation can be that smooth flat also can be smooth sphere or the like.
Claims (7)
1, a kind of multichip packaging structure light-emitting diode, comprise substrate, electrode, tube core, transparent jelly, it is characterized in that, have a recessed cup on the substrate at least, there is layer of metal coating each recessed cup side and bottom surface, and two distribution of electrodes are in each recessed cup rim of a cup edge or recessed glass of bottom surface, at least one tube core is placed in the bottom surface of each recessed cup, and transparent jelly is filled whole recessed cup and formed exiting surface at rim of a cup.
2, multichip packaging structure light-emitting diode according to claim 1 is characterized in that, described substrate is a ceramic substrate.
3, multichip packaging structure light-emitting diode according to claim 1 is characterized in that, described substrate is a metal substrate, and this metal substrate is aluminium sheet or copper coin.
4, multichip packaging structure light-emitting diode according to claim 1 is characterized in that, recessed cup side is inverted cone shape or parabolic shape, and the bottom surface is the plane.
5, multichip packaging structure light-emitting diode according to claim 1 is characterized in that, the coating of recessed cup side is silver or magnesium, and bottom surface coating is gold.
6, multichip packaging structure light-emitting diode according to claim 1 is characterized in that, described exiting surface is smooth flat or sphere.
7, multichip packaging structure light-emitting diode according to claim 1 is characterized in that, a plurality of tube cores in same recessed cup can be connected, also can be in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200468329U CN2717026Y (en) | 2004-06-11 | 2004-06-11 | Multi-chip packaging structure LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200468329U CN2717026Y (en) | 2004-06-11 | 2004-06-11 | Multi-chip packaging structure LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2717026Y true CN2717026Y (en) | 2005-08-10 |
Family
ID=34872287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2004200468329U Expired - Lifetime CN2717026Y (en) | 2004-06-11 | 2004-06-11 | Multi-chip packaging structure LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2717026Y (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008055406A1 (en) * | 2006-11-08 | 2008-05-15 | Chang Hsin High Intensity Led (Dong Guan) Co., Ltd | A white light led |
| WO2009012624A1 (en) * | 2007-07-23 | 2009-01-29 | Foshan Nationstar Optoelectronics Limited Liability Company | A white light device and the manufacturing method thereof |
| CN101414655B (en) * | 2008-12-02 | 2010-11-10 | 东莞市邦臣光电有限公司 | High power light-emitting diode and encapsulation method |
| CN102097423A (en) * | 2009-11-17 | 2011-06-15 | Lg伊诺特有限公司 | Light emitting device package and lighting system |
| CN102376699A (en) * | 2011-06-17 | 2012-03-14 | 杭州华普永明光电股份有限公司 | LED (Light Emitting Diode) module based on ceramic-based PCB (Printed Circuit Board) and manufacturing process thereof |
| CN102693972A (en) * | 2011-12-23 | 2012-09-26 | 日月光半导体制造股份有限公司 | Light emitting diode package and manufacture method of lead frame of the light emitting diode package |
| CN109273577A (en) * | 2018-09-28 | 2019-01-25 | 深圳市鼎业欣电子有限公司 | A kind of package substrate and production method of LED light |
-
2004
- 2004-06-11 CN CNU2004200468329U patent/CN2717026Y/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008055406A1 (en) * | 2006-11-08 | 2008-05-15 | Chang Hsin High Intensity Led (Dong Guan) Co., Ltd | A white light led |
| WO2009012624A1 (en) * | 2007-07-23 | 2009-01-29 | Foshan Nationstar Optoelectronics Limited Liability Company | A white light device and the manufacturing method thereof |
| CN101414655B (en) * | 2008-12-02 | 2010-11-10 | 东莞市邦臣光电有限公司 | High power light-emitting diode and encapsulation method |
| CN102097423A (en) * | 2009-11-17 | 2011-06-15 | Lg伊诺特有限公司 | Light emitting device package and lighting system |
| CN102097423B (en) * | 2009-11-17 | 2015-09-30 | Lg伊诺特有限公司 | Light emitting device package and illuminator |
| CN102376699A (en) * | 2011-06-17 | 2012-03-14 | 杭州华普永明光电股份有限公司 | LED (Light Emitting Diode) module based on ceramic-based PCB (Printed Circuit Board) and manufacturing process thereof |
| CN102693972A (en) * | 2011-12-23 | 2012-09-26 | 日月光半导体制造股份有限公司 | Light emitting diode package and manufacture method of lead frame of the light emitting diode package |
| CN109273577A (en) * | 2018-09-28 | 2019-01-25 | 深圳市鼎业欣电子有限公司 | A kind of package substrate and production method of LED light |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: FUSHAN CITY GUOXING PHOTOELECTRIC CO., LTD. Free format text: FORMER NAME OR ADDRESS: FUSHAN CITY GUOXING PHOTOELECTRICITY TECHNOLOGY CO.,LTD. |
|
| CP03 | Change of name, title or address |
Address after: 528000, No. 18, Huabao South Road, Chancheng District, Guangdong, Foshan Patentee after: Foshan Guoxing Photoelectric Co., Ltd. Address before: 528000, No. 24 Jiangbei Road, Chancheng District, Guangdong, Foshan Patentee before: Foshan Nationstar Optoelectronics Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20140611 Granted publication date: 20050810 |