CN2717026Y - 多芯片封装结构发光二极管 - Google Patents

多芯片封装结构发光二极管 Download PDF

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CN2717026Y
CN2717026Y CNU2004200468329U CN200420046832U CN2717026Y CN 2717026 Y CN2717026 Y CN 2717026Y CN U2004200468329 U CNU2004200468329 U CN U2004200468329U CN 200420046832 U CN200420046832 U CN 200420046832U CN 2717026 Y CN2717026 Y CN 2717026Y
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emitting diode
recessed cup
packaging structure
cup
substrate
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方福波
王垚浩
李绪锋
林达儒
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Foshan NationStar Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball

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Abstract

本实用新型公开一种多芯片封装结构发光二极管，包括一块金属基板或陶瓷基板，基板上有一个以上的凹杯，每个凹杯中安放一个以上的管芯，各管芯电极用金线连接后向凹杯中注入透明胶状物。封装后的发光二极管可有效提高驱动电流，具有散热性能好，光通量高，结构小巧、集成度高的特点。

Description

多芯片封装结构发光二极管
技术领域
本实用新型涉及一种发光二极管，具体的讲，涉及一种多芯片结构封装的发光二极管。
背景技术
随着半导体技术的发展，发光二极管的用途越来越广泛，从最初的指示逐步向背景光照明、装饰照明及普通照明发展，对发光二极管亮度的要求也不断提高。传统发光二极管由于亮度低，在要求使用高亮度的情况下需要组合很多个发光二极管，不仅占用的体积大，而且由于传统发光二极管引脚细，热阻大，发光二极管管芯产生的热量无法快速的从发光管管芯传导出去，热量的积累将影响到发光二极管的发光效率和亮度，并加速了管芯的衰减。
采用多芯片封装结构的发光二极管可以有效提高发光二极管的亮度，增加发光二极管应用集成度，减小应用所占用的空间。中国专利公开号CN1417868A，公开日2003年5月4日，发明创造名称为发光二极管芯片的多芯片封装结构，该申请案公开了一种发光二极管芯片的多芯片封装结构，是将多个发光二极管芯片配置于一印刷电路板中，再以一胶体将发光二极管芯片固定于印刷电路板上。根据该发明的权利要求表述，在该发明中除包含具有平底凹杯的印刷线路板之外，还至少包括一导体层、一导热层及一导电插塞，导体层位于凹杯的表面，导热层与凹杯分别位于印刷线路板的两面，导电插塞贯穿于该印刷线路板并连接于该导体层与该导热层之间。该发明的不足在于，热量的传递靠与贯穿于该印刷线路板并连接于导体层与导热层之间的导电插塞，将从发光二极管传递到导体层的热量再传递到导热层上，再通过导热层将热量传递到环境中，由于导电插塞的尺寸有限，其热容量和传递热量的速度有限，发光二极管产生的热量不能及时传递到导热层上，在发光二极管上会产生大量的热量积累；由于要将导电插塞贯穿印刷线路板并通过导体层，需要在凹杯底部加工可以使导电插塞贯穿的孔，并将导电插塞插入该孔中，这样的操作在批量生产中工艺复杂，为保证加工的精度需要专用的夹具和安装工具；由于在凹杯的底部加工孔并安装导电插塞，而管芯也是安放在凹杯底部，管芯的安放将和导电插塞相互影响；仅采用胶体将发光二极管芯片固定在凹杯上将会给种线带来困难。
发明内容
本实用新型的目的是提供一种集成度高、亮度高、散热性能好、加工工艺简单、使用方便的多芯片封装结构发光二极管。
本实用新型包括一块金属基板或陶瓷基板，电极，管芯，透明胶状物，基板上至少有一个凹杯，每个凹杯侧面和底面有一层金属镀层，两电极分布在每个凹杯杯口边缘或凹杯底面，每个凹杯的底面至少安放一个管芯，透明胶状物填充整个凹杯并在杯口形成出光面；凹杯的侧面镀层为银或镁，底面镀层为金，凹杯的侧面为倒锥状或抛物线状，底面为平面；透明胶状物所形成的出光面为光滑平面或球面；在同一个凹杯中的多个管芯可以串联，也可以并联。
本实用新型可以实现的效果是：(1)发光二极管的集成度高，多个发光二极管管芯封装在一块基板上，有效的减小了应用所占用的空间；(2)具有良好的散热性能，金属基板和陶瓷基板散热性能良好而且整块板都具有散热功能，增大了散热面积，增强了散热效果和发光二极管的使用可靠性和稳定性；(3)具有良好的聚光和反射光效果，凹杯侧面和底面的镀层可以将发光二极管管芯射向侧面和底面的光充分反射，倒锥状或抛物线状凹杯可以将反射光有效会聚；(4)加工工艺简单，无论是基板的制作还是发光二极管的封装，都可以利用现有技术和设备完成。
附图说明
以下结合附图和具体实施例对本实用新型作进一步说明：
图1为专利公开号为CN1417868A申请案公开的多芯片封装结构示意图；
图2为是本实用新型的第一实施例示意图；
图3为是本实用新型的第二实施例示意图；
图4为是本实用新型的第三实施例示意图。
具体实施例
如图2-图4所示，本实用新型的多芯片封装结构发光二极管，包括基板1，电极2，管芯6，透明胶状物4，基板1为陶瓷基板或金属基板，为金属基板时，可以采用铝板或铜板；基板1上至少有一个凹杯7、图2凹杯为一个，图3图4凹杯为多个；凹杯7侧面为倒锥状或抛物线状，底面为平面；每个凹杯侧面和底面有一层金属镀层8，凹杯侧面的镀层8为银或镁，底面镀层8为金；两电极2分布在每个凹杯7杯口边缘或凹杯7底面，至少一个管芯6安放在每个凹杯的底面，在同一个凹杯中的多个管芯6可以串联，也可以并联，其间通过键合线3连接。透明胶状物4填充整个凹杯7并在杯口形成出光面5；该出光面5为光滑平面(如图4)或球面(如图2、图3)。
本实用新型发光二极管的制作可分为两个部分，第一部分为基板的制作，第二部分为发光二极管的封装。金属基板的制作可采用如下方法：制版，按基板的尺寸和位置在金属板上制作电路和电极；钻孔，在制版后的金属板的相应位置制作凹杯；制作镀层，在凹杯的底面镀上金，在侧面镀上银或镁；下料，将金属板材切割成所需的基板。陶瓷基板的制作也可以采用金属基板同样的制作方法，也可以采用多层陶瓷共烧的方法制作。发光二极管的封装可采用的方法：安装管芯，可以用粘合剂将管芯粘在凹杯底部或采用焊接的方法将管芯焊接在凹杯上；种线，用金线或铝线将管芯的电极与相应的电极连接起来；注胶，向凹杯中注入透明胶状物，对管芯和金线或铝线起到保护作用并在出口处形成出光面。制造白光发光二极管在注胶前还可能需要涂荧光粉。
第二实施例与第一实施例的主要区别在于，底面镀层同时也作为导电层，在管芯的串并联过程中，有部分键合线直接打在镀层上。
第三实施例与第一实施例的主要区别在于，电极位于凹杯的底面，出光面为光滑平面。
本实用新型还有其他的实施方式，例如，部分电极位于凹杯的底面，另外部分电极位于凹杯杯口边缘；同一个凹杯中的多个管芯可以串联、并联或串并联组合；封装后的出光面可以是光滑平面也可以是光滑球面等等。

Claims (7)

1、一种多芯片封装结构发光二极管，包括基板，电极，管芯，透明胶状物，其特征是，基板上至少有一个凹杯，每个凹杯侧面和底面有一层金属镀层，两电极分布在每个凹杯杯口边缘或凹杯底面，至少一个管芯安放在每个凹杯的底面，透明胶状物填充整个凹杯并在杯口形成出光面。
2、根据权利要求1所述的多芯片封装结构发光二极管，其特征是，所述基板为陶瓷基板。
3、根据权利要求1所述的多芯片封装结构发光二极管，其特征是，所述基板为金属基板，该金属基板为铝板或铜板。
4、根据权利要求1所述的多芯片封装结构发光二极管，其特征是，凹杯侧面为倒锥状或抛物线状，底面为平面。
5、根据权利要求1所述的多芯片封装结构发光二极管，其特征是，凹杯侧面的镀层为银或镁，底面镀层为金。
6、根据权利要求1所述的多芯片封装结构发光二极管，其特征是，所述出光面为光滑平面或球面。
7、根据权利要求1所述的多芯片封装结构发光二极管，其特征是，在同一个凹杯中的多个管芯可以串联，也可以并联。
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008055406A1 (en) * 2006-11-08 2008-05-15 Chang Hsin High Intensity Led (Dong Guan) Co., Ltd A white light led
WO2009012624A1 (en) * 2007-07-23 2009-01-29 Foshan Nationstar Optoelectronics Limited Liability Company A white light device and the manufacturing method thereof
CN100510522C (zh) * 2006-10-25 2009-07-08 南茂科技股份有限公司 光源组件
CN101414655B (zh) * 2008-12-02 2010-11-10 东莞市邦臣光电有限公司 大功率发光二极管及封装方法
CN102097423A (zh) * 2009-11-17 2011-06-15 Lg伊诺特有限公司 发光器件封装和照明系统
CN102376699A (zh) * 2011-06-17 2012-03-14 杭州华普永明光电股份有限公司 一种基于陶瓷基pcb板的led模组及其制造工艺
CN102693972A (zh) * 2011-12-23 2012-09-26 日月光半导体制造股份有限公司 发光二极管封装及其导线架的制作方法
CN109273577A (zh) * 2018-09-28 2019-01-25 深圳市鼎业欣电子有限公司 一种led光的封装基板及制作方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100510522C (zh) * 2006-10-25 2009-07-08 南茂科技股份有限公司 光源组件
WO2008055406A1 (en) * 2006-11-08 2008-05-15 Chang Hsin High Intensity Led (Dong Guan) Co., Ltd A white light led
WO2009012624A1 (en) * 2007-07-23 2009-01-29 Foshan Nationstar Optoelectronics Limited Liability Company A white light device and the manufacturing method thereof
CN101414655B (zh) * 2008-12-02 2010-11-10 东莞市邦臣光电有限公司 大功率发光二极管及封装方法
CN102097423A (zh) * 2009-11-17 2011-06-15 Lg伊诺特有限公司 发光器件封装和照明系统
CN102097423B (zh) * 2009-11-17 2015-09-30 Lg伊诺特有限公司 发光器件封装和照明系统
CN102376699A (zh) * 2011-06-17 2012-03-14 杭州华普永明光电股份有限公司 一种基于陶瓷基pcb板的led模组及其制造工艺
CN102693972A (zh) * 2011-12-23 2012-09-26 日月光半导体制造股份有限公司 发光二极管封装及其导线架的制作方法
CN109273577A (zh) * 2018-09-28 2019-01-25 深圳市鼎业欣电子有限公司 一种led光的封装基板及制作方法

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