CN102800585A - Electroforming manufacturing method for light-emitting diode - Google Patents
Electroforming manufacturing method for light-emitting diode Download PDFInfo
- Publication number
- CN102800585A CN102800585A CN2012102361109A CN201210236110A CN102800585A CN 102800585 A CN102800585 A CN 102800585A CN 2012102361109 A CN2012102361109 A CN 2012102361109A CN 201210236110 A CN201210236110 A CN 201210236110A CN 102800585 A CN102800585 A CN 102800585A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- electroforming
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an electroforming manufacturing method for a light-emitting diode. The method comprises the following steps of: providing a substrate which is provided with a plurality of epitaxial layers and a patterned metal layer, forming an insulating layer on the top of the epitaxial layers and on a side wall of the patterned metal layer, forming a supporting radiating layer made of a metal material with proper thickness by utilizing an electroforming process of an electroforming processing device, and cutting the substrate to obtain a plurality of light-emitting diode grains, and mounting the light-emitting diode to a bearing substrate by utilizing a flip chip technology; and finally, stripping the substrate through laser beams. Therefore, the problem that the process is low in speed due to the bottom filling adhesive manufacturing method in the prior art is solved, the supporting force required by the process of stripping the substrate through laser beams is provided, and a good heat extraction effect can be achieved.
Description
Technical field
The present invention relates to a kind of manufacturing approach of flip-chip light-emitting diode, specifically is the electroforming process for making of relevant a kind of flip-chip light-emitting diode.
Background technology
Light-emitting diode component has that power consumption is few, volume is little and the characteristic of long service life; Showing that by using in the past application like instrument stop lamp, movable advertising board, outdoor billboard, is applied in the backlight of general lighting, special lighting such as traffic sign, Landscape Lighting, projecting lamp or even LCD up to now.With regard to the part of illumination, because the considering of energy efficiency, light-emitting diode might replace incandescent lamp, fluorescent lamp especially.
Be able at light-emitting diode under the prerequisite of extensive use, the problem that but still has many need to overcome on the manufacturing technology exists.The known skill of light-emitting diode mainly can be divided three kinds haply according to effect and purpose at present: gallium nitride (GaN-on-Si) crystal technique of heap of stone provides low cost of manufacture; Membrane of flip chip (Flip-Chip) technology can provide high luminous power; Metal bond (Metal-Bonding) technology can improve operating current.Wherein the light-emitting diode of membrane of flip chip structure can significantly increase luminous efficiency; But also destroy associated component because of incident high temperature easily; In addition, the membrane of flip chip technology causes the epitaxial layer of gallium nitride to break because of producing seismic wave in peeling off the process of sapphire substrate easily; Present solution sees also Fig. 1 to Fig. 3; Peel off the substrate sketch map so that covering of explanation prior art is brilliant to substrate, underfill method for filling and laser beam, as shown in Figure 1, prior art provides well cutting but the plural light emitting diode 12 of still unstripped sapphire substrate 10 and cover brilliant to submounts 14; Each light emitting diode 12 comprises the epitaxial layer 16 that is positioned on the sapphire substrate 10, and the bottom surface of epitaxial layer 16 is formed with first metal electrode 18 and second metal electrode 20; As shown in Figure 2; Pour into underfills 24 fillings in epitaxial layer 16 bottoms with dispensing needle head 22 again; Underfill 24 fills up the space of light emitting diode 12 and sapphire substrate 10 because capillarity begins diffusion, last driving fit first metal electrode 18 and second metal electrode 20 fully make underfill 24 hardening after baking; To provide epitaxial layer 16 bottom support power, underfill 24 will produce bubble 26 because of coating air gap this moment; As shown in Figure 3, peel off in the middle of sapphire substrate 10 processes because produce existing of seismic wave and bubble 26 with laser beam 28, produce slight crack 30 so that epitaxial layer 16 bottom support power are not enough, cause component failures at last.In addition; Again with the shortcoming of epitaxial layer 16 filling underfills 24; Owing to need to make processing procedure speed become slow by a perfusion underfill 24; And because underfill 24 is because of being not to be the good conductor of heat energy, so the heat energy that light emitting diode 12 is produced also can't discharge fast, makes generation high temperature and shortens useful life.
Therefore, the manufacturing approach of flip-chip light-emitting diode that how to solve prior art on processing procedure consuming time with because of coating the disappearance of bubble that air gap produces, the direction that is desire research improvement belongs to.
In view of this; The present invention is directed to above-mentioned problem, propose a kind of electroforming process for making of light-emitting diode, to make the metallic support heat dissipating layer; Can make to accelerate manufacture process; Owing to use the manufacturing approach of electroforming to make the metallic support heat dissipating layer, therefore more can provide and use laser beam to peel off the necessary support force of sapphire substrate process, epitaxial layer is unlikely produces and break.
Summary of the invention
The present invention's main purpose; Tie up to the electroforming process for making that a kind of light-emitting diode is provided; Utilize the electroforming processing procedure will be the substrate of processing procedure epitaxial layer and metal electrode connect negative electrode; To carry out the metallic support heat dissipating layer of the long-pending suitable thickness in Shen, first procedure can be accomplished the supporting layer of thousands of contained on wafer crystal grain, is able to solve prior art because need and causes processing procedure speed problem too slowly by a perfusion underfill.
Another object of the present invention; Tie up to the electroforming process for making that a kind of light-emitting diode is provided; Utilize the made metallic support heat dissipating layer of electroforming processing procedure, can make processing procedure stable, solve prior art because use the disappearance of filling glue and causing bubble to promote the product yield; Be able to provide laser beam to peel off the needed support force of substrate process, epitaxial layer be unlikely break.
The present invention's a purpose again; Tie up to the electroforming process for making that a kind of light-emitting diode is provided; Owing to be to utilize the electroforming processing procedure to process the metallic support heat dissipating layer, therefore has the heat extraction effect of height, to solve the disappearance that prior art causes high temperature to discharge because of the made supporting layer of filling glue that uses the non-thermal energy good conductor; But because metallic support heat dissipating layer quick heat radiating heat conduction; Therefore avoid crystal grain localized hyperthermia, can increase assembly useful life itself and luminous efficiency, but the reliability of lifting subassembly more.
For reaching above-mentioned purpose, the present invention provides a kind of electroforming process for making of light-emitting diode, and its step comprises at least:
One substrate is provided, which is provided with plural light emitting diode, each said light emitting diode comprises an epitaxial layer that is positioned on the said substrate, and one of said epitaxial layer end face is formed with a patterned metal layer; The sidewall that on the said end face of said epitaxial layer, reaches said patterned metal layer forms an insulating barrier;
Each said light emitting diode is carried out electroforming, so that form a metallic support heat dissipating layer on the said epitaxial layer;
With said light emitting diode is that unit cuts, to obtain plural LED crystal particle;
With Flip Chip said LED crystal particle is mounted on the bearing substrate; And
Peel off said substrate with laser beam.
As the preferred version of said method and further improvement, can be embodied in following aspect:
In one preferred embodiment, said pattern metal series of strata are one first metal electrode and one second metal electrode.
In one preferred embodiment, each said light emitting diode carries out electroforming, so that form the electroforming step of a metallic support heat dissipating layer on the said epitaxial layer, this electroforming step comprises: the metal material that will desire electroforming connects anode; And said substrate connects in negative electrode and the immersion plating solution, to form a metallic support heat dissipating layer.In the preferred embodiment on this basis, said electroplating solution is to be copper sulphate, sulfuric acid or chloride ion.
In one preferred embodiment, the material of said substrate system is sapphire, gallium nitride, aluminium nitride, carborundum, silicon or aluminum gallium nitride.
In one preferred embodiment, the material of said patterned metal layer system is the individual layer and the multi-layer metal structure of titanium, aluminium, gold, nickel, copper, silver, platinum, osmium, lithium, chromium, caesium or tungsten.
In one preferred embodiment, the material of said insulating barrier is oxide, nitride, polymethyl methacrylate (PMMA), photoresistance SU-8, silica gel or epoxy resin.
In one preferred embodiment, said metal material is tin, copper, nickel, cobalt, gold, aluminium, tungsten, tin indium oxide, silver, chromium, platinum, molybdenum or tungsten.
In one preferred embodiment, it is 2 μ m to 100 μ m that said metallic support heat dissipating layer forms thickness.
In one preferred embodiment, after the step of said insulating barrier, more comprise: the etched technology removes partly this insulating barrier, to expose partly said patterned metal layer.
In one preferred embodiment, after the step that forms said metallic support heat dissipating layer, more comprise: the etched technology removes partly said metallic support heat dissipating layer, to expose partly said patterned metal layer.
The beneficial effect that the present invention brings is:
1. need not handle, but the synchronized generation metal is processed heat dissipating layer, so its processing procedure is obviously quick to single light emitting diode.
2. according to the characteristics of electroforming; The metallic support heat dissipating layer can progressively be grown according to the surface configuration of first metal electrode and second metal electrode and drawn; But not power pours into outside the prior art, so its shaping strength is high, is able to provide laser beam to peel off the needed support force of substrate process.
3. the conductive coefficient of metal material is generally higher, utilizes the metallic support heat dissipating layer of metal material made to have the heat extraction effect of height especially, therefore can increase assembly useful life itself and luminous efficiency.
Description of drawings
Embodiment is described further the present invention below in conjunction with accompanying drawing:
Fig. 1 is brilliant in the substrate sketch map for covering of prior art.
Fig. 2 is the underfill method for filling of prior art.
Fig. 3 peels off the substrate sketch map for the laser beam of prior art.
Fig. 4 is the formation insulating barrier sketch map of the embodiment of the invention one.
Fig. 5 is an amount of insulating barrier sketch map that removes of the embodiment of the invention one.
Fig. 6 is the formation metallic support heat dissipating layer sketch map of the embodiment of the invention one.
Fig. 7 is an amount of metallic support heat dissipating layer sketch map that removes of the embodiment of the invention one.
Fig. 8 peels off the substrate sketch map for the laser beam of the embodiment of the invention one.
Fig. 9 is the electroforming sketch map of the embodiment of the invention one.
Embodiment
The present invention system supports heat dissipating layer for a kind of use electroforming process for making carries out plated metal; Owing to be to use electroforming process for making; Can make epitaxial layer no longer because of using filling glue making supporting layer and breaking because of bubble exists to produce; To provide laser beam to peel off the needed support force of substrate process, the present invention uses metal material to make the metallic support heat dissipating layer, can make that more supporting layer has radiating effect.
The present invention's implementation method is please consulted Fig. 4 to Fig. 8 simultaneously, explain the present invention the formation insulating barrier, remove an amount of insulating barrier sketch map, form metallic support heat dissipating layer sketch map, remove an amount of metallic support heat dissipating layer sketch map and laser beam is peeled off the substrate sketch map.As shown in Figure 4; The present invention proposes a kind of electroforming process for making of light-emitting diode; Its step comprises at least: the substrate 32 like materials such as sapphire, gallium nitride, aluminium nitride, carborundum, silicon or aluminum gallium nitride and not cutting is provided; On the substrate that is provided 32, has the plural light emitting diode of processing 34; Each light emitting diode 34 comprises the epitaxial layer 36 that is positioned on the substrate 32, has first metal electrode 38 and second metal electrode 40 that the material of use is formed by the individual layer and the multi-layer metal structure of titanium, aluminium, gold, nickel, copper, silver, platinum, osmium, lithium, chromium, caesium or tungsten at epitaxial layer 36 end face on it, with as patterned metal layer.Subsequently; On the end face of epitaxial layer 36 and the sidewall of first metal electrode 38 and second metal electrode 40, can use the technology of rotary coating, rapid thermal treatment or chemical vapour deposition (CVD) to deposit to form as insulation materials such as oxide, nitride, polymethyl methacrylate (PMMA), photoresistance SU-8, silica gel or epoxy resin formation insulating barrier 42 to protect and the sidewall of insulate epitaxial layer 36 and first metal electrode 38 and second metal electrode 40; As shown in Figure 5; After substrate 32 forms insulating barrier 42; Use material to remove partly insulating barrier 42 by light shield collocation etching technique to insulating barrier 42 again,, form first contact jaw 44 and second contact jaw 46 respectively to expose one of part first metal electrode 38 and second metal electrode 40 end; As shown in Figure 6; And consult Fig. 9 simultaneously, and the present invention's formation metallic support heat dissipating layer method and electroforming sketch map is described, as shown in the figure; Handle like the metal material 48 of tin, copper, nickel, cobalt, gold, aluminium, tungsten, tin indium oxide, silver, chromium, platinum, molybdenum or tungsten and put to electroforming processing unit 50 and connect anode+and immerse in the electroplating solution 52 of copper sulphate, sulfuric acid or chloride ion desiring to carry out electroforming; Substrate 32 connects negative electrode-and immerse in the electroplating solution 52 of copper sulphate, sulfuric acid or chloride ion, and therefore, electroforming processing unit 50 will produce chemical reaction; And precipitating metal ion M+, to form the metallic support heat dissipating layer 54 that thickness is 2 μ m to 100 μ m; Substrate 32 as shown in Figure 7, as will to carry out the electroforming completion removes partly metallic support heat dissipating layer 54 by light shield collocation etching technique to the material of metallic support heat dissipating layer 54 again, makes win contact jaw 44 and second contact jaw 46 exposed outside; As shown in Figure 8, be that unit cuts with each light emitting diode 34 again, after obtaining plural LED crystal particle 35, with Flip Chip LED crystal particle is mounted on the bearing substrate 56 again, last, peel off substrate 32 with laser beam 58 again.
Such as above-mentioned execution mode a kind of electroforming process for making of light-emitting diode of exposure; Utilize the mode of electroforming processing procedure to form the metallic support heat dissipating layer of suitable thickness; Need not handle to single light emitting diode 34; But the synchronized generation metal is processed heat dissipating layer 54, so its processing procedure is obviously quick.
Second aspect; Because the characteristics of electroforming; Metallic support heat dissipating layer 54 can progressively be grown according to the surface configuration of first metal electrode 38 and second metal electrode 40 and drawn; But not power pours into outside the prior art, so its shaping strength is high, is able to provide laser beam to peel off the needed support force of substrate process;
The third aspect, the conductive coefficient of metal material is generally higher, utilizes the metallic support heat dissipating layer of metal material made to have the heat extraction effect of height especially, therefore can increase assembly useful life itself and luminous efficiency.
The above is merely preferred embodiment of the present invention, so can not limit the scope that the present invention implements according to this, the equivalence of promptly doing according to claim of the present invention and description changes and modifies, and all should still belong in the scope that the present invention contains.
Claims (11)
1. the electroforming process for making of a light-emitting diode, it is characterized in that: its step comprises:
One substrate is provided, which is provided with plural light emitting diode, each said light emitting diode comprises an epitaxial layer that is positioned on the said substrate, and one of said epitaxial layer end face is formed with a patterned metal layer;
The sidewall that on the said end face of said epitaxial layer, reaches said patterned metal layer forms an insulating barrier;
Each said light emitting diode is carried out electroforming, so that form a metallic support heat dissipating layer on the said epitaxial layer;
With said light emitting diode is that unit cuts, to obtain plural LED crystal particle;
With Flip Chip said LED crystal particle is mounted on the bearing substrate; And
Peel off said substrate with laser beam.
2. a kind of electroforming process for making of light-emitting diode according to claim 1, it is characterized in that: wherein said pattern metal series of strata are one first metal electrode and one second metal electrode.
3. a kind of electroforming process for making of light-emitting diode according to claim 1; It is characterized in that: each said light emitting diode is carried out electroforming; So that form in the electroforming step of a metallic support heat dissipating layer on the said epitaxial layer, the metal material that will desire electroforming connects anode; And said substrate connects in negative electrode and the immersion plating solution, to form said metallic support heat dissipating layer.
4. a kind of electroforming process for making of light-emitting diode according to claim 1, it is characterized in that: the material of wherein said substrate is sapphire, gallium nitride, aluminium nitride, carborundum, silicon or aluminum gallium nitride.
5. a kind of electroforming process for making of light-emitting diode according to claim 1, it is characterized in that: the material system of wherein said patterned metal layer is the individual layer and the multi-layer metal structure of titanium, aluminium, gold, nickel, copper, silver, platinum, osmium, lithium, chromium, caesium or tungsten.
6. a kind of electroforming process for making of light-emitting diode according to claim 1, it is characterized in that: the material of said insulating barrier is oxide, nitride, polymethyl methacrylate, photoresistance SU-8, silica gel or epoxy resin.
7. like the electroforming process for making of the said a kind of light-emitting diode of claim 3, it is characterized in that: wherein said metal material is tin, copper, nickel, cobalt, gold, aluminium, tungsten, tin indium oxide, silver, chromium, platinum, molybdenum or tungsten.
8. like the electroforming process for making of the said a kind of light-emitting diode of claim 3, it is characterized in that: said electroplating solution is to be copper sulphate, sulfuric acid or chloride ion.
9. a kind of electroforming process for making of light-emitting diode according to claim 1, it is characterized in that: it is 2 μ m to 100 μ m that said metallic support heat dissipating layer forms thickness.
10. a kind of electroforming process for making of light-emitting diode according to claim 1, it is characterized in that: after the step that forms said insulating barrier, also comprise: the etched technology removes partly said insulating barrier, to expose partly said patterned metal layer.
11. a kind of electroforming process for making of light-emitting diode according to claim 1; It is characterized in that: after the step that forms said metallic support heat dissipating layer; More comprise: the etched technology removes partly said metallic support heat dissipating layer, to expose partly said patterned metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210236110.9A CN102800585B (en) | 2012-07-09 | 2012-07-09 | A kind of electroforming process for making of light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210236110.9A CN102800585B (en) | 2012-07-09 | 2012-07-09 | A kind of electroforming process for making of light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102800585A true CN102800585A (en) | 2012-11-28 |
| CN102800585B CN102800585B (en) | 2015-09-09 |
Family
ID=47199655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210236110.9A Active CN102800585B (en) | 2012-07-09 | 2012-07-09 | A kind of electroforming process for making of light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102800585B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582515A (en) * | 2020-12-11 | 2021-03-30 | 苏州芯聚半导体有限公司 | Light emitting diode and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1655348A (en) * | 2004-02-12 | 2005-08-17 | 冲电气工业株式会社 | Electronic part mounting substrate, electronic part, and semiconductor device |
| CN1973375A (en) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | Method of separating layers of material using laser beam |
| CN101099223A (en) * | 2005-01-11 | 2008-01-02 | 美商旭明国际股份有限公司 | Light emitting diode with conducting metal substrate |
| CN101345276A (en) * | 2007-07-12 | 2009-01-14 | 台达电子工业股份有限公司 | LED device and its preparing process |
| CN101569024A (en) * | 2007-02-21 | 2009-10-28 | 松下电器产业株式会社 | Semiconductor light emitting element and method for manufacturing semiconductor light emitting device |
| CN102106006A (en) * | 2008-06-02 | 2011-06-22 | 高丽大学校 | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
| US20120061700A1 (en) * | 2010-09-09 | 2012-03-15 | Andreas Eder | Method and system for providing a reliable light emitting diode semiconductor device |
| CN102403436A (en) * | 2010-09-07 | 2012-04-04 | 昆山科技大学 | Method for manufacturing heat sink of semi-conductor light emitting component |
-
2012
- 2012-07-09 CN CN201210236110.9A patent/CN102800585B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1655348A (en) * | 2004-02-12 | 2005-08-17 | 冲电气工业株式会社 | Electronic part mounting substrate, electronic part, and semiconductor device |
| CN1973375A (en) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | Method of separating layers of material using laser beam |
| CN101099223A (en) * | 2005-01-11 | 2008-01-02 | 美商旭明国际股份有限公司 | Light emitting diode with conducting metal substrate |
| CN101569024A (en) * | 2007-02-21 | 2009-10-28 | 松下电器产业株式会社 | Semiconductor light emitting element and method for manufacturing semiconductor light emitting device |
| CN101345276A (en) * | 2007-07-12 | 2009-01-14 | 台达电子工业股份有限公司 | LED device and its preparing process |
| CN102106006A (en) * | 2008-06-02 | 2011-06-22 | 高丽大学校 | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
| CN102403436A (en) * | 2010-09-07 | 2012-04-04 | 昆山科技大学 | Method for manufacturing heat sink of semi-conductor light emitting component |
| US20120061700A1 (en) * | 2010-09-09 | 2012-03-15 | Andreas Eder | Method and system for providing a reliable light emitting diode semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582515A (en) * | 2020-12-11 | 2021-03-30 | 苏州芯聚半导体有限公司 | Light emitting diode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102800585B (en) | 2015-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203932096U (en) | Flexible light-emitting semiconductor device and for supporting and be electrically connected the flexible article of light-emitting semiconductor device | |
| EP2400570A2 (en) | Substrate for an optical device, an optical device package comprising the same and a production method for the same | |
| US9768369B2 (en) | LED metal substrate package and method of manufacturing same | |
| CN103123949A (en) | Flexible light emitting diode package structure and manufacturing method thereof | |
| TW200834961A (en) | White light emitting diode package structure having silicon substrate and method of making the same | |
| US8354284B2 (en) | LED module and method of manufacturing the same | |
| WO2015077623A1 (en) | Led submount with integrated interconnects | |
| CN102683517B (en) | Film LED (light-emitting diode) chip device as well as manufacturing method and application thereof | |
| CN102509731A (en) | Alternating current vertical light emitting element and manufacture method thereof | |
| CN102222625A (en) | Manufacturing method of light-emitting diode (LED) packaging structure and base thereof | |
| CN103022307A (en) | Wafer-level LED packaging method | |
| CN103066192A (en) | Semiconductor illuminating light source and method of manufacturing the same and semiconductor illuminating chip | |
| CN104409585A (en) | Vertical LED structure and manufacturing method thereof | |
| JP2013187545A (en) | Method of manufacturing light-emitting diode package | |
| CN202210534U (en) | Semiconductor packaging structure | |
| CN102800585B (en) | A kind of electroforming process for making of light-emitting diode | |
| CN103456853A (en) | White light LED chip and production method thereof | |
| CN100383989C (en) | Laser stripped power LED chip on thermal metal deposition and production thereof | |
| CN102569100A (en) | Method for manufacturing heat dissipation seat of semiconductor assembly | |
| CN102693970B (en) | Light emitting diode apparatus | |
| CN103779473A (en) | LED chip, manufacturing method of LED chip and LED light-emitting device | |
| CN116190503A (en) | Transfer device and preparation method of display panel | |
| TWI453947B (en) | Manufacturing method of electro - optical diode for electroforming | |
| CN203325971U (en) | Flip chip type light emitting diode | |
| CN102983123A (en) | Light-emitting diode (LED) integration module provided with upper and lower electrodes LED chip ceramics substrate and integration technique thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |