CN203325971U - Flip chip type light emitting diode - Google Patents
Flip chip type light emitting diode Download PDFInfo
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- CN203325971U CN203325971U CN2013202360515U CN201320236051U CN203325971U CN 203325971 U CN203325971 U CN 203325971U CN 2013202360515 U CN2013202360515 U CN 2013202360515U CN 201320236051 U CN201320236051 U CN 201320236051U CN 203325971 U CN203325971 U CN 203325971U
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- emitting diode
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- chip light
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003575 carbonaceous material Substances 0.000 claims description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
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Abstract
The utility model relates to a chip flip-chip formula emitting diode, include: a circuit carrier plate, which comprises a substrate, an insulating layer and a conducting layer, wherein the insulating layer is arranged on the substrate, the conducting layer is arranged on the insulating layer, and the conducting layer is provided with a circuit layer and an etching layer; a welding layer arranged on the circuit layer; and a flip-chip light emitting diode chip arranged on the bonding layer and electrically connected to the circuit carrier plate.
Description
Technical field
The utility model is about a kind of flip-chip light-emitting diode, espespecially a kind of product yield that improves the flip-chip light-emitting diode by the conductive layer accumulative total breathing amount that reduces circuit board.
Background technology
From the sixties, the advantage such as luminous that the power consumption of light-emitting diode (Light Emitting Diode, LED) is low and long-lasting, replace gradually in daily life and be used for the purposes such as the indicator light of illumination or various electric equipments or light source.What is more, and light-emitting diode, towards the development of multicolour and high brightness, has been applied in large-scale outdoor display billboard or traffic sign, shows that its applicable field is very extensive.
The flip-chip light-emitting diode is for adopting the light-emitting diode of chip package technology, and it is by solder technology, the flip-chip light-emitting diode chip for backlight unit to be electrically connected on substrate.Please refer to Figure 1A to Fig. 1 E, is the preparation flow schematic diagram of existing flip-chip light-emitting diode 1 '.As shown in Figure 1A, provide a circuit board 10 ', this circuit board 10 ' includes the substrate 101 ' of aluminium material, the insulating barrier 102 ' of epoxy resin composition and the conductive layer 103 ' of copper metal.Then, as shown in Figure 1B, circuit board 10 ' is heated to cover the required temperature of brilliant welding in advance, for example: 350 ℃, now, conductive layer 103 ' on circuit board 10 ' will be because being subject to high temperature will start to produce dilatancy, as the arrow in Figure 1B means conductive layer 103 ' Direction distortion toward the outer side.Then, as shown in Figure 1 C, again weld layer 113 ' and flip-chip light-emitting diode chip for backlight unit 11 ' are arranged on conductive layer 103 ', make the semiconductor epitaxial layer 112 ' of flip-chip light-emitting diode chip for backlight unit 11 ' be electrically connected to this conductive layer 103 ' by weld layer 113 ', wherein, weld layer 113 ' can be formed by general gold or gold-tin alloy solder solidification commonly used.
Then, due to the thermal coefficient of expansion (thermal coefficient of expansion of copper metal is about 14ppm/ ℃ to 16ppm/ ℃) of conductive layer 103 ' be greater than flip-chip light-emitting diode chip for backlight unit 11 ' and the chip substrate 111 ' that covers (for example, sapphire substrate) thermal coefficient of expansion (sapphire thermal coefficient of expansion is about 5ppm/ ℃ to 6ppm/ ℃), be with, in cooling procedure after welding completes, will make conductive layer 103 ' produce contraction distortion amount largely than flip-chip light-emitting diode chip for backlight unit 11 ' or chip substrate 111 ' (sapphire substrate); Therefore, as shown in Fig. 1 D, in cooling procedure after welding completes, conductive layer 103 ' on circuit board 10 ' is because be subject to the cooling contraction distortion that will start to produce, as the arrow in Fig. 1 D means that conductive layer 103 ' is towards inboard Direction distortion, and then pull the flip-chip light-emitting diode chip for backlight unit 11 ' of electric connection, and cause flip-chip light-emitting diode chip for backlight unit 11 ' also with generation distortion.Finally, as shown in Fig. 1 E, after being cooled to room temperature, the flip-chip light-emitting diode chip for backlight unit 11 ' that is electrically connected at conductive layer 103 ' can produce the defect as the A part, thereby causes the production yield of flip-chip light-emitting diode 1 ' to reduce.
Accordingly, if can develop a flip-chip light-emitting diode, see through to reduce the heat distortion amount of conductive layer, improve on the deformation-compensated of conductive layer in welding process, for the product yield that promotes the flip-chip light-emitting diode, its help is arranged.
The utility model content
Main purpose of the present utility model is to provide a kind of flip-chip light-emitting diode, can see through the heat distortion amount that reduces conductive layer, the thermal distortion compensation of conductive layer in welding process is provided, avoid in the cooling procedure after welding, conductive layer is excessive because be subject to cooling caused heat distortion amount, pull the flip-chip light-emitting diode chip for backlight unit of electric connection, and then cause the flip-chip light-emitting diode chip for backlight unit to produce defect, cause the final products yield to reduce.
For reaching above-mentioned purpose, the utility model is to provide a kind of flip-chip light-emitting diode, comprise: a circuit board, it includes a substrate, an insulating barrier and a conductive layer, wherein, this insulating barrier is arranged on this substrate, and this conductive layer is arranged on this insulating barrier, and this conductive layer has a line layer and an etch layer; One weld layer, be arranged on this line layer; And a flip-chip light-emitting diode chip for backlight unit, be arranged on this weld layer, and be electrically connected to this circuit board.
In above-mentioned flip-chip light-emitting diode of the present utility model, this conductive layer comprises a chip covering, this chip covering refers to the conductive layer (comprising line layer and the etch layer of flip-chip light-emitting diode chip for backlight unit below) covered by chip flip-over type light-emitting diode chip for backlight unit; And a circuit exposed area, this circuit exposed area refers to the conductive layer (comprising line layer and the etch layer of flip-chip light-emitting diode chip for backlight unit below) do not covered by chip flip-over type light-emitting diode chip for backlight unit.In the utility model, as long as can reduce the heat distortion amount of conductive layer, and in welding process, providing deformation-compensated any mode of conductive layer can regard as in category of the present utility model, the utility model is not specially limited the special ratios of this line layer chips area of coverage and this circuit exposed area.Preferably, in an aspect of the present utility model, in this chip covering, this line layer area can account for 20% to 50% of this conductive layer area, be preferably the line layer area and can account for 20% to 40% of this conductive layer area, the best can account for 30% of this conductive layer area for the line layer area.In another aspect of the present utility model, in this circuit exposed area, this line layer area can account for 50% to 80% of this conductive layer area, is preferably this line layer area and can accounts for 60% to 80% of this conductive layer area, and the best can account for 70% of this conductive layer area for this line layer area.Accordingly, see through and adjust the shared ratio of line layer in chip covering and circuit exposed area, can reach the heat distortion amount that reduces conductive layer, and then the deformation-compensated of conductive layer is provided in welding process.
In above-mentioned flip-chip light-emitting diode of the present utility model, this etch layer can be a plurality of etched recesses, make conductive layer can pass through the etched recesses of etch layer to reduce line layer area occupied ratio, and then make the heat distortion amount of line layer reduce and to reduce thereupon along with the line layer area occupied, and the heat distortion amount in temperature changing process affords redress for line layer can to see through the etched recesses of etch layer.In the utility model, those etched recesses can be various shapes, as long as those etched recesses can provide any design of thermal distortion compensation can regard as in category of the present utility model to conductive layer, and the utility model is not specially limited.For example, in an aspect of the present utility model, the shape of those etched recesses can be strip, ellipse, square, circle, trapezoidal or its combination.Preferably, in of the present utility model one concrete aspect, those etched recesses can be the strip through suitable arrangement; In another concrete aspect of the present utility model, those etched recesses can be the ellipse through suitable arrangement; In another concrete aspect of the present utility model, those etched recesses can be the square through suitable arrangement, but the utility model is not limited in this.Moreover, in an aspect of the present utility model, those etched recesses can be a discontinuous etched recesses, and, in another aspect of the present utility model, those etched recesses can be a continuous etched recesses, but the utility model is not as limit.
In addition, those etched recesses can the existing etching technique in various this areas form, and the utility model is not especially as limit.For example, this etched recesses can see through a physical etch method, a chemical method for etching or an electrolytic etching method and form, and the utility model is not as limit.More specifically, in an aspect of the present utility model, those etched recesses can see through a dry etching method, ion beam milling method, electric paste etching method, how rice engraving method, reactive ion-etching, laser processing method, laser carved method, wet etching or electrolytic etching method and form, but the utility model is not limited in this.In of the present utility model one concrete aspect, those etched recesses can see through dry etching method and form.
In above-mentioned flip-chip light-emitting diode of the present utility model, this line layer there is a positive electricity electrically and a negative electricity electrical, thereby the follow-up welding required electric current of flip-chip light-emitting diode chip for backlight unit thereon can be provided.In addition, because technical characterictic of the present utility model is the line layer area occupied ratio that is to see through the control chip area of coverage and circuit exposed area, reach the purpose of this utility model, with compared to existing technologies, account for conductive layer area ratio in the line layer of chip covering lower, therefore, consider the stability of the flip-chip light-emitting diode chip for backlight unit of the line layer that is welded in chip covering, in the utility model, this line layer can be the surface of a roughening.Accordingly, even if in the situation that the line layer of chip covering to account for conductive layer area ratio lower, the flip-chip light-emitting diode chip for backlight unit still can be welded on this line layer and unlikely peeling off securely.
In above-mentioned flip-chip light-emitting diode of the present utility model, as long as any mode that the flip-chip light-emitting diode chip for backlight unit can be welded on this line layer securely can be regarded as in category of the present utility model, the utility model is not specially limited composition or the thickness of required weld layer.In an aspect of the present utility model, weld layer can be formed by gold or gold-tin alloy solder solidification.In another aspect of the present utility model, the thickness of this weld layer can be 1 micron to 50 microns, and the thickness that is preferably this weld layer can be 2 microns to 5 microns, but the utility model is not as limit.
In above-mentioned flip-chip light-emitting diode of the present utility model, the existing flip-chip light-emitting diode chip for backlight unit in various this areas all can be used, and the utility model is not especially as limit.Particularly, the spendable flip-chip light-emitting diode chip for backlight unit of the utility model can comprise: a chip substrate; The semiconductor epitaxial loayer, it is arranged at this chip substrate bottom, this semiconductor epitaxial layers contains a P type semiconductor epitaxial loayer, an active intermediate and a N type semiconductor epitaxial loayer, wherein, this P type semiconductor epitaxial loayer has this electrical line layer of positive electricity by this weld layer to be electrically connected to, and this N type semiconductor epitaxial loayer has this electrical line layer of negative electricity by this weld layer to be electrically connected to.Accordingly, the flip-chip light-emitting diode can be electrically connected to this line layer by weld layer, thereby luminous under the state of conducting.
In above-mentioned flip-chip light-emitting diode of the present utility model, the existing insulating layer material in various this areas all can be used, and the utility model is not especially as limit.For example, in an aspect of the present utility model, this insulating barrier can be a resin material, a ceramic material, a carbonaceous material or a heat-conducting glue.In of the present utility model one concrete aspect, this insulating barrier is resin material.In more detail, this insulating barrier can be an epoxide resin material.
Moreover, in above-mentioned flip-chip light-emitting diode of the present utility model, the existing baseplate material in various this areas all can be used, the utility model is not also especially as limit.For example, in an aspect of the present utility model, this substrate can be a metal substrate, a ceramic substrate or a silicon substrate.In of the present utility model one concrete aspect, this substrate can be a metal substrate.In more detail, this metal substrate can be an aluminium base.
Therefore in above-mentioned flip-chip light-emitting diode of the present utility model, the circuit board be comprised of various substrates, insulating barrier and conductive layer all can be used in the utility model and is not particularly limited.For example, in an aspect of the present utility model, this circuit board can be for by aluminium base, epoxy resin, and the copper clad laminate that forms of copper; In another aspect of the present utility model, this circuit board can by by aluminium base, insulating properties diamond like carbon, and copper formed; And in another concrete aspect of the present utility model, this circuit board can by by aluminium base, aluminium oxide, and copper formed, but the utility model is not limited in this.
Accordingly, flip-chip light-emitting diode of the present utility model can see through the ratio of the shared conductive layer area of line layer of the control chip area of coverage and circuit exposed area, reduce the heat distortion amount of conductive layer, and provide the deformation-compensated of conductive layer in welding process, thereby improve the product yield of flip-chip light-emitting diode.
The accompanying drawing explanation
Figure 1A to Fig. 1 E is the preparation flow schematic diagram for existing flip-chip light-emitting diode.
Fig. 2 A to Fig. 2 F is the preparation flow schematic diagram of the circuit board of the utility model embodiment 1.
Fig. 3 is the structural representation of the flip-chip light-emitting diode of the utility model embodiment 2.
Fig. 4 is the structural representation of the circuit board of the utility model embodiment 3.
Fig. 5 is the structural representation of the circuit board of the utility model embodiment 4.
[symbol description]
1 ', 1 flip-chip light-emitting diode
10 ', 10,20,30 circuit boards
101 ', 101 substrates
102 ', 102 insulating barriers
103 ', 103,203,303 conductive layers
1031,2031,3031 line layers
The electrical line layer of 10311 positive electricity
The electrical line layer of 10312 negative electricity
1032,2032,3032 etch layers
11 ', 11 flip-chip light-emitting diode chip for backlight unit
111 ', 111 chip substrates
112 ', 112 semiconductor epitaxial layers
1121 P type semiconductor epitaxial loayers
1122 active intermediate
1123 N type semiconductor epitaxial loayers
113 ', 113 weld layers
Embodiment
Technical characterictic of the present utility model is the ratio through the shared conductive layer area of line layer of the control chip area of coverage and circuit exposed area, reduce the heat distortion amount of conductive layer, and provide the deformation-compensated of conductive layer in welding process, avoid in welding process, the conductive layer heat distortion amount is excessive and pull the flip-chip light-emitting diode chip for backlight unit that is electrically connected it, and then causes in the flip-chip light-emitting diode chip for backlight unit and produce defect.
Embodiment 1
For reaching the purpose of this utility model, at first, embodiment 1 prepares the required circuit board of the utility model 10.Please refer to Fig. 2 A to Fig. 2 F, is the preparation flow schematic diagram of the circuit board 10 of the utility model embodiment 1.At first, as shown in Figure 2 A and 2 B, be to provide a substrate 101, and in this substrate surface, one insulating barrier 102 be set.Then, as shown in Figure 2 C, a conductive layer 103 is set on this insulating barrier 102.In this embodiment 1, this substrate 101 is aluminium base; This insulating barrier 102 is epoxy resin; And this conductive layer 103 is a bronze medal metal.Please continue to refer to Fig. 2 D and in the lump with reference to figure 2E, by this copper metal of dry etching method etching, thereby the etch layer 1032 that makes this conductive layer 103 form line layer 1031 and there are a plurality of etched recesses, and this line layer 1031 comprises the electrical line layer 10311 of a positive electricity and the electrical line layer 10312 of a negative electricity, and the electrical line layer 10311 of positive electricity and the electrical line layer 10312 of negative electricity separate each other, in addition, in the chip covering of B part inboard, this line layer 1031 accounts for 30% of these conductive layer 103 areas, and in the circuit exposed area in the B part outside, this line layer 1031 accounts for 70% of these conductive layer 103 areas.In other words, in the chip covering of B part inboard, etch layer 1032 occupies larger area ratio, make the heat distortion amount of line layer 1031 reduce and to reduce thereupon along with line layer 1031 area occupied, on the other hand, in the circuit exposed area in the B part outside, that line layer 1031 occupies larger area ratio, make the heat-sinking capability of line layer 1031 increase and to increase thereupon along with line layer 1031 area occupied, and the heat distortion amount in temperature changing process afford redress for line layer 1031 can to see through the etched recesses of etch layer 1032.In addition, please in the lump with reference to figure 2D and Fig. 2 F, in embodiment 1, those etch layers 1032 are discontinuous strip groove, and this line layer 1031 can see through a blasting treatment method and process, thereby make this line layer 1031 there is the surface of a roughening, make this line layer 1031 and the flip-chip light-emitting diode chip for backlight unit or the weld layer that cover subsequently there is better binding ability.
Accordingly, as shown in Fig. 2 A to Fig. 2 F, the circuit board 10 that the utility model flip-chip light-emitting diode is required comprises: a substrate 101; One insulating barrier 102, be arranged on this substrate 101; And a conductive layer 103, be arranged on this insulating barrier 102, and this conductive layer 103 has a line layer 1031 and an etch layer 1032.In embodiment 1, in the chip covering of B part inboard, this line layer 1031 accounts for 30% of these conductive layer 103 areas, and in the circuit exposed area in the B part outside, this line layer 1031 accounts for 70% of these conductive layer 103 areas, and this line layer 1031 has a roughened surface, and comprise the electrical line layer 10311 of a positive electricity and the electrical line layer 10312 of a negative electricity.In addition, this substrate 101 is aluminium base, and this insulating barrier 102 is epoxy resin, and this conductive layer 103 is Copper Foil, and those etch layers 1032 are discontinuous strip groove.
Embodiment 2
Please refer to Fig. 3, structural representation for the flip-chip light-emitting diode 1 of embodiment 2, it is a flip-chip light-emitting diode chip for backlight unit 11 to be seen through to a weld layer 113 be electrically connected on the prepared circuit board of above-described embodiment 1 10, to complete flip-chip light-emitting diode 1 of the present utility model.
Be with, as shown in Figure 3, the flip-chip light-emitting diode 1 of embodiment 2 comprises: a circuit board 10, it includes a substrate 101, an insulating barrier 102 and a conductive layer 103, wherein, this insulating barrier 102 is arranged on this substrate 101, and this conductive layer 103 is arranged on this insulating barrier 102, and this conductive layer 103 has line layer 1031 and etch layer 1032; One weld layer 113 is to be arranged on this line layer 1031; And a flip-chip light-emitting diode chip for backlight unit 11, be arranged on this weld layer 113, and be electrically connected to this circuit board 10.
In embodiment 2, this flip-chip light-emitting diode chip for backlight unit 11 comprises: a chip substrate 111; Semiconductor epitaxial loayer 112, it is arranged at this chip substrate 111 bottoms, and this semiconductor epitaxial layers 112 contains a P type semiconductor epitaxial loayer 1121, an active intermediate 1122 and a N type semiconductor epitaxial loayer 1123.Please in the lump with reference to figure 2D, this flip-chip light-emitting diode chip for backlight unit 11 is arranged at the inboard chip covering top of B part, and P type semiconductor epitaxial loayer 1121 is to have this electrical line layer 10311 of positive electricity by this weld layer 113 to be electrically connected to, and N type semiconductor epitaxial loayer 1123 has this electrical line layer 10312 of negative electricity by this weld layer 113 to be electrically connected to.
Accordingly, the circuit board 10 used due to embodiment 2 sees through the area ratio that the line layer 1031 of the control chip area of coverage and circuit exposed area respectively accounts for conductive layer, reduces the heat distortion amount as conductive layer 103.Therefore, in welding process, this flip-chip light-emitting diode chip for backlight unit 11 can be avoided being subject to conductive layer 103 and pulls and produce destruction and defect, therefore can promote the product yield of the utility model flip-chip light-emitting diode.
Embodiment 3
Please refer to Fig. 3 in the lump with reference to figure 4, the top view that Fig. 4 is the circuit board 20 that uses of embodiment 3.Embodiment 3 and embodiment 2 are roughly the same, its difference is in the chip covering of B part inboard, the etch layer 2032 of this circuit board 20 is discontinuous oval-shaped groove, and, in the circuit exposed area in the B part outside, 2032 of etch layers are discontinuous strip groove.Be with, the conductive layer 203 of the circuit board that the present embodiment 3 is used comprises that a line layer 2031 and has the etch layer 2032 of a plurality of etched recesses, wherein, in the B part, the etch layer 2023 of inboard chip covering is discontinuous oval-shaped groove, the etch layer 2023 of the circuit exposed area outside the B part is the strip groove, in addition, in the chip covering of B part inboard, this line layer 2031 accounts for 30% of these conductive layer 203 areas, in the circuit exposed area in the B part outside, this line layer 2031 accounts for 70% of these conductive layer 203 areas.Accordingly, can be used as the required circuit board of the present embodiment 3 20, thereby complete flip-chip light-emitting diode of the present utility model.
Embodiment 4
Please refer to Fig. 3 in the lump with reference to figure 5, the top view that Fig. 5 is the circuit board 30 that uses of embodiment 4.Embodiment 4 and embodiment 2 are roughly the same, its difference is in the chip covering of B part inboard, the etch layer 3032 of this circuit board 30 is discontinuous oval-shaped groove, and, in the circuit exposed area in the B part outside, 3032 of etch layers are discontinuous strip groove.Be with, the conductive layer 303 of the circuit board 30 that the present embodiment 4 is used comprises that a line layer 3031 and has the etch layer 3032 of a plurality of etched recesses, wherein, in the B part, the etch layer 3023 of inboard chip covering is discontinuous oval-shaped groove, the etch layer 3023 of the circuit exposed area outside the B part is the strip groove, in addition, in the chip covering of B part inboard, this line layer 3031 accounts for 30% of these conductive layer 303 areas, in the circuit exposed area in the B part outside, this line layer 3031 accounts for 70% of these conductive layer 303 areas.Accordingly, can be used as the required circuit board of the present embodiment 4 30, thereby complete flip-chip light-emitting diode of the present utility model.
Above-described embodiment is only to give an example for convenience of description, and the interest field that the utility model is advocated should be as the criterion so that claim is described certainly, but not only limits to above-described embodiment.
Claims (16)
1. a flip-chip light-emitting diode is characterized in that comprising:
One circuit board, it includes a substrate, an insulating barrier and a conductive layer, and wherein, this insulating barrier is arranged on this substrate, and this conductive layer is arranged on this insulating barrier, and this conductive layer has a line layer and an etch layer;
One weld layer, be arranged on this line layer; And
One flip-chip light-emitting diode chip for backlight unit, be arranged on this weld layer, and be electrically connected to this circuit board.
2. flip-chip light-emitting diode as claimed in claim 1, is characterized in that, this conductive layer comprises a chip covering; An and circuit exposed area.
3. flip-chip light-emitting diode as claimed in claim 2, is characterized in that, in this chip covering, this line layer area accounts for 20% to 50% of this conductive layer area.
4. flip-chip light-emitting diode as claimed in claim 2, is characterized in that, in this circuit exposed area, this line layer area accounts for 50% to 80% of this conductive layer area.
5. flip-chip light-emitting diode as claimed in claim 1, is characterized in that, this etch layer is a plurality of etched recesses.
6. flip-chip light-emitting diode as claimed in claim 5, is characterized in that, these these etched recesses be shaped as strip, ellipse, square, circle, trapezoidal or its combination.
7. flip-chip light-emitting diode as claimed in claim 5, is characterized in that, these these etched recesses are a discontinuous etched recesses, or those etched recesses are a continuous etched recesses.
8. flip-chip light-emitting diode as claimed in claim 1, is characterized in that, the thickness of this weld layer is 1 micron to 50 microns.
9. flip-chip light-emitting diode as claimed in claim 1, is characterized in that, this line layer has the surface of a roughening.
10. flip-chip light-emitting diode as claimed in claim 1, is characterized in that, this line layer there is a positive electricity electrically and a negative electricity electrical.
11. the flip-chip light-emitting diode, is characterized in that as claimed in claim 1, this flip-chip light-emitting diode chip for backlight unit comprises: a chip substrate; The semiconductor epitaxial loayer, it is arranged at this chip substrate bottom, and this semiconductor epitaxial layers contains a P type semiconductor epitaxial loayer, an active intermediate and a N type semiconductor epitaxial loayer.
12. flip-chip light-emitting diode as described as claims 11, is characterized in that, this P type semiconductor epitaxial loayer has this electrical line layer of positive electricity by this weld layer to be electrically connected to.
13. flip-chip light-emitting diode as described as claims 11, is characterized in that, this N type semiconductor epitaxial loayer is to have this electrical line layer of negative electricity by this weld layer to be electrically connected to.
14. the flip-chip light-emitting diode, is characterized in that as claimed in claim 1, this insulating barrier is a resin material, a ceramic material, a carbonaceous material or a heat-conducting glue.
15. flip-chip light-emitting diode as described as claims 14 is characterized in that this insulating barrier is resin material.
16. the flip-chip light-emitting diode, is characterized in that as claimed in claim 1, this substrate is a metal substrate, a ceramic substrate or a silicon substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102206691 | 2013-04-12 | ||
| TW102206691U TWM461880U (en) | 2013-04-12 | 2013-04-12 | Flip chip type light emitting diode (LED) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203325971U true CN203325971U (en) | 2013-12-04 |
Family
ID=49629464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013202360515U Expired - Lifetime CN203325971U (en) | 2013-04-12 | 2013-05-03 | Flip chip type light emitting diode |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN203325971U (en) |
| TW (1) | TWM461880U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110998879A (en) * | 2017-08-10 | 2020-04-10 | 夏普株式会社 | Semiconductor module, display device, and method for manufacturing semiconductor module |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016104609A1 (en) * | 2014-12-25 | 2016-06-30 | 大日本印刷株式会社 | Led element substrate, led-mounted module and led display device using these |
-
2013
- 2013-04-12 TW TW102206691U patent/TWM461880U/en not_active IP Right Cessation
- 2013-05-03 CN CN2013202360515U patent/CN203325971U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110998879A (en) * | 2017-08-10 | 2020-04-10 | 夏普株式会社 | Semiconductor module, display device, and method for manufacturing semiconductor module |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM461880U (en) | 2013-09-11 |
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Granted publication date: 20131204 |
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| CX01 | Expiry of patent term |