CN100383989C - Laser stripped power LED chip on thermal metal deposition and production thereof - Google Patents
Laser stripped power LED chip on thermal metal deposition and production thereof Download PDFInfo
- Publication number
- CN100383989C CN100383989C CNB2004100098415A CN200410009841A CN100383989C CN 100383989 C CN100383989 C CN 100383989C CN B2004100098415 A CNB2004100098415 A CN B2004100098415A CN 200410009841 A CN200410009841 A CN 200410009841A CN 100383989 C CN100383989 C CN 100383989C
- Authority
- CN
- China
- Prior art keywords
- heat sink
- metal heat
- electrode
- epitaxial wafer
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000001465 metallisation Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 17
- 239000010980 sapphire Substances 0.000 claims abstract description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 45
- 239000010931 gold Substances 0.000 claims description 40
- 239000010936 titanium Substances 0.000 claims description 30
- 239000010949 copper Substances 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 20
- 230000008020 evaporation Effects 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 5
- 239000011133 lead Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010944 silver (metal) Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000001413 cellular effect Effects 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000003595 mist Substances 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention designs a power LED chip of laser stripped substrate on a metal heat sink and a production method thereof, which has the specific steps: a transparent electrode Ni/Au is evaporated in a large area on a GaN epitaxial wafer of a sapphire substrate, and Ni/Ag/Ti/Au reflecting layer is evaporated on the transparent electrode; flat and cyclical metal heat sink unit is electroplated on the reflecting layer, and the thickness of the metal heat sink unit is more than 50 mum; the epitaxial chip plated with the metal heat sink is radiated by a Kr excimer laser to strip the sapphire substrate for obtaining an epitaxial wafer which is adhered to the metal heat sink, and the n plane of the epitaxial wafer is upward; the n-GaN surface is etched by ions, and then, the n plane electrode is evaporated in the electrode structure of Ti/Al/Ni/Au; the n plane of the LED epitaxial wafer is stuck with blue film to obtain a GaN-base LED epitaxial wafer supported by the metal heat sink, and a tube core unit is split.
Description
Technical field
The present invention relates to GaN based power type light-emitting diode (LED) chip production method, relate in particular to a kind of GaN base LED epitaxial wafer of laser lift-off Sapphire Substrate that adopts and prepare led chip of top-bottom electrode structures and preparation method thereof.
Background technology
The GaN base LED chip of common positive bright dipping is because the p electrode is in the light, and active area is etched away on the n face, and the p electrode is difficult to make, and traditional Sapphire Substrate is difficult to heat radiation, thereby is difficult to further improve the luminous power and the efficient of led chip.In order to address these problems, U.S. Cree company has proposed the GaN base LED of the top-bottom electrode structures of SiC substrate, by the bright dipping of n face, and the problem that has solved heat radiation and be in the light, simultaneously vertical electricity is led the raising that helps charge carrier injection, combined efficiency.Substrate is somewhat expensive but SiC compares jewel, and processing is also difficult more, has restricted it and has promoted the use of.Recently, Japanese Nichia company and German Osram company have released the laser lift-off Sapphire Substrate respectively, the technology of the led chip of preparation top-bottom electrode structures.Also solved heat radiation effectively, gone out optical issue by this technology, the micro-structural that can prepare high light-emitting efficiency on the n face has greatly been simplified manufacture craft simultaneously, can also reuse Sapphire Substrate, thereby be to obtain high-luminous-efficiency, the important directions of low-cost LED.Yet at present because of GaN Wafer bonding technology, the heat sink heat radiation of Si, conduction still has some problems, thereby realizes relatively difficulty, does not still become high-power chip at present and prepares main direction.
Summary of the invention
The purpose of this invention is to provide the method that a kind of laser lift-off epitaxial wafer prepares upper/lower electrode,, and dispense a large amount of technical processs such as abrasive disc, scribing, sliver, improve the integrated performance index of device with the raising radiating efficiency.The present invention is by whole making Ohmic electrode and reflector on the p of chip face, then on the reflector plating or spraying plating or evaporation thermal conductivity high, periodically the thick metal layers of unit as chip heat sink and substrate (these metals comprise copper (Cu), aluminium (Al), silver (Ag), gold (Au), titanium (Ti), nickel (Ni), chromium (Cr), iron (Fe), lead (Pb) etc. and alloy thereof), then peel off Sapphire Substrate, prepare Ohmic electrode at the n face then.Characteristics of the present invention are to avoid the difficulty of wafer bonding, utilize metal heat sink to improve radiating efficiency simultaneously, induce sliver.
According to the power-type LED chip for preparing the laser lift-off substrate on metal heat sink of the present invention, concrete structure is as follows:
Going up at thick metal heat sink substrate (more than the 50 μ m) is reflecting electrode, successively be Ni, Ag, Ti, Au forms (Ni/Ag/Ti/Au), be that Ni and Au form the transparency electrode of (Ni/Au) on it, top again is the epitaxial wafer of GaN base LED, is n type electrode topmost, n type electrode material successively is Ti, Al, Ni, Au (Ti/Al/Ni/Au).
Its planar structure: the metal heat sink substrate is to be the not connection side module unit that is spaced apart 200 μ m of 1.2mm in the cycle, reflecting electrode be the cycle be 1.2mm be spaced apart 100 μ m interconnect the square unit, transparency electrode and epitaxial wafer be the cycle be 1.2mm continuously every the square unit, n type electrode is the interconnective branch structure that two pads are arranged, and the cycle is 1.2mm.
The above planar structure cycle is that 1.2mm is the typical sizes of large size chip, and to the arbitrary dimension chip, its cycle can change in 0.2 to 5mm scope, and its all period interval also can change in proper range in proportion.
According to the method for preparing the power-type LED chip of laser lift-off substrate on metal heat sink of the present invention, concrete steps are as follows:
(1) large tracts of land evaporation transparency electrode Ni/Au on Sapphire Substrate GaN epitaxial wafer;
(2) evaporation Ni/Ag/Ti/Au reflector on transparency electrode;
(3) on the reflector, electroplate smooth, periodic metal heat sink unit, more than the thickness 50 μ m;
(4) the heat sink epitaxial wafer of plating is peeled off Sapphire Substrate under the irradiation of Kr excimer laser, obtains n towards the last epitaxial wafer that is bonded in metal heat sink;
(5) use plasma etching on n-GaN surface, evaporating n face electrode then, electrode structure is Ti/Al/Ni/Au;
(6) LED epitaxial wafer n face is sticked blue film, obtain the GaN base LED epitaxial wafer that metal heat sink supports, and make the tube core cellular spliting open.
Description of drawings
Below in conjunction with accompanying drawing the present invention is illustrated in further detail:
Fig. 1 a～Fig. 1 c is laser lift-off, the signal of upper/lower electrode led chip; Wherein
Fig. 1 a is the profile of laser lift-off, upper/lower electrode led chip;
Fig. 1 b is a Cu substrate surface vertical view;
Fig. 1 c is a n-GaN exiting surface vertical view;
Fig. 2 a～Fig. 2 i is laser lift-off, upper/lower electrode led chip preparation process schematic diagram; Wherein
Fig. 2 a is evaporation transparency electrode Ni/Au on Sapphire Substrate GaN epitaxial wafer;
Fig. 2 b is evaporation reflector Ni/Ag/Ti/Au on transparency electrode;
Fig. 2 c is plating thick Cu on the reflector;
Fig. 2 d is that laser lift-off falls Sapphire Substrate;
Fig. 2 e is evaporation Ti/Al/Ni/Au on n-GaN;
Fig. 2 f is stained with blue film to epitaxial wafer, expands film and makes chip unit separately.
Most preferred embodiment is described in detail
The purpose of this invention is to provide the method that a kind of laser lift-off epitaxial wafer prepares upper/lower electrode,, improve optics, the electric property index of device to improve radiating efficiency.The present invention is by whole making Ohmic electrode and reflector on the p of chip face, then on the reflector plating or spraying plating or evaporation thermal conductivity high, periodically the thick metal layers of unit as chip heat sink and substrate, then peel off Sapphire Substrate, prepare Ohmic electrode at the n face then.
As heat sink metal can be copper (Cu), aluminium (Al), silver (Ag), gold (Au), titanium (Ti), nickel (Ni), chromium (Cr), iron (Fe), lead (Pb) etc. and alloy thereof, below only with copper (Cu) as metal heat sink be most preferred embodiment to do explanation, other metals can be done same displacement, and other steps and structure do not need to change.
Below with reference to accompanying drawing of the present invention, be described in detail in the power-type LED chip method of preparation laser lift-off substrate on the metal heat sink and the structure of this led chip.
Fig. 1 a～Fig. 1 c is depicted as laser lift-off, the signal of upper/lower electrode led chip; Wherein Fig. 1 a is the profile of laser lift-off, upper/lower electrode led chip; Fig. 1 b is a Cu substrate surface vertical view; Fig. 1 c is a n-GaN exiting surface vertical view; In conjunction with these accompanying drawings, describe power-type LED chip structure and the characteristics that on Cu is heat sink, prepare the laser lift-off substrate of the present invention below in detail:
(1) the thick Cul of metal heat sink substrate for electroplating, thickness is more than 50 microns, surfacing is as the LED substrate of top-bottom electrode structures.
(2) be reflector 2 above the thick Cu substrate; Reflector 2 is made up of Ni/Ag/Ti/Au, and gross thickness is at 100-2000nm, and Ni connects Ag and transparency electrode; Ag makes the photon reflection that sees through transparency electrode to exiting surface n-GaN face, and Ti/Au hinders the Ag oxidation, and the entire emission layer makes the surface form low-resistance conductive network, thereby guarantees to electroplate the uniformity of Cu.
(3) be transparency electrode 3 above the reflector 2, transparency electrode 3 is the Ni of oxidation (5nm)/Au (5nm); This structure guarantees to form good Ohmic contact with LED epitaxial wafer 4p-GaN.
(4) be the epitaxial wafer 4 of GaN base LED above the transparency electrode 3.
(5) above the LED epitaxial loayer 4 be n type electrode, this n type electrode is Ti/Al/Ni/Au, and gross thickness is at 100-2000nm.
Planar structure according to led chip of the present invention is: the metal heat sink substrate is to be the not connection side module unit that is spaced apart 200 μ m of 1.2mm in the cycle, reflecting electrode be the cycle be 1.2mm be spaced apart 100 μ m interconnect the square unit, transparency electrode and epitaxial wafer be the cycle be 1.2mm continuously every the square unit, n type electrode is the interconnective branch structure that two pads are arranged, and the cycle is 1.2mm.
Fig. 2 a～Fig. 2 f is laser lift-off, upper/lower electrode led chip preparation process schematic diagram; Wherein Fig. 2 a is evaporation transparency electrode Ni/Au on Sapphire Substrate GaN epitaxial wafer; Fig. 2 b is evaporation reflector Ni/Ag/Ti/Au on transparency electrode; Fig. 2 c is plating thick Cu on the reflector; Fig. 2 d is that laser lift-off falls Sapphire Substrate; Fig. 2 e is evaporation Ti/Al/Ni/Au on n-GaN; Fig. 2 f is stained with blue film to epitaxial wafer, expands film and makes chip unit separately.
It is as follows to describe concrete implementation step of the present invention in detail in conjunction with Fig. 2 a～Fig. 2 f:
(1) large tracts of land evaporation transparency electrode Ni (5nm)/Au (5nm) on Sapphire Substrate GaN epitaxial wafer, then under oxygen 400-600 ℃ following alloy 1-10 minute, use oxalic acid: water=1: 3 floats surperficial NiO.As Fig. 2 a.
(2) evaporation Ni/Ag/Ti/Au reflector on transparency electrode, metal links to each other between each unit, and gross thickness is at 100-2000nm, as Fig. 2 b.The electrode reference figuration is shown in Fig. 1 b.
(3) do mask with thick photoresist, electroplate smooth, periodic Cu unit on the reflector, more than the thickness 50 μ m, Cu does not interconnect between the unit.As Fig. 2 c.
(4) plating Cu epitaxial wafer peeling GaN substrate under the irradiation of Kr excimer laser obtains the epitaxial wafer on the supine Cu of being bonded in of n, as Fig. 2 d.
(5) at n-GaN surface Ar plasma etching 10 seconds to 10 minutes, radio-frequency power 60-200W, evaporating n face electrode such as Fig. 1 c then.Electrode structure is Ti/Al/Ni/Au, and gross thickness is at 100-2000nm, as Fig. 2 e.
(6) LED epitaxial wafer n face is sticked blue film (70-80 ℃), obtain the GaN base LED epitaxial wafer that Cu supports, induce sliver to make the tube core cellular spliting open, as Fig. 2 f.
LED preparation method's of the present invention main feature has:
(1) transparency electrode 3 is the Ni/Au of oxidation, guarantees to form good Ohmic contact with LED epitaxial wafer 4p-GaN.Remove NiO with oxalic acid, obtain more low-resistance contact layer, reduce the LED operating voltage, and increase the uniformity of electroplating Cu.
(2) reflector 2 is made up of Ni/Ag/Ti/Au, Ni connects Ag and transparency electrode, and Ag makes the photon reflection that sees through transparency electrode to exiting surface n-GaN face, and Ti/Au hinders the Ag oxidation, the entire emission layer makes the surface form low-resistance conductive network, thereby guarantees to electroplate the uniformity of Cu.
(3) selectivity is plated thick Cu1 and has been guaranteed that tube core is separated from each other, and the border of Cu will cause GaN to induce sliver along the Cu edge along a cleavage surface of GaN face so simultaneously.
(4) by in the surface treatment of n-GaN face, and select suitable electrode component, thickness, be the Ohmic electrode Ti/Al/Ni/Au 5 of non-alloying, consider the even distribution of n face injection current simultaneously, select rational electrode pattern at the n-GaN face.
The present invention has the advantage of the following aspects:
(1) n-GaN face bright dipping has avoided electrode to be in the light; Glazed area is big, the light transmittance height;
(2) n type Ohmic electrode is easy to preparation, is convenient to injection current and evenly distributes, and improves injection efficiency;
(3) radiating efficiency of Cu substrate improves greatly;
(4) chip light-emitting efficiency is improved in p type reflector;
(5) periodic thick Cu will induce sliver, omit technical processs such as abrasive disc, scribing and sliver.
Although disclose most preferred embodiment of the present invention and accompanying drawing for the purpose of illustration, it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to most preferred embodiment and the disclosed content of accompanying drawing.
Claims (7)
1. laser lift-off power-type LED chip on metal heat sink, concrete structure comprises with the lower part:
The metal heat sink substrate thickness is greater than 50 microns, and surfacing is directly as the LED support substrates of top-bottom electrode structures;
It above the metal heat sink substrate reflector; The reflector successively is made up of Ni, Ag, Ti, Au metal, and Ni connects Ag and transparency electrode;
Be transparency electrode above the reflector, transparency electrode is that the Ni and the Au of oxidation forms;
The n of LED epitaxial loayer is towards last, and successively evaporation Ti, Al, Ni, Au form n type electrode on the n-GaN surface.
2. the laser lift-off power-type LED chip on metal heat sink according to claim 1, it is characterized in that: the metallic conduction that plates on reflecting electrode is heat sink, the double support substrates of doing the LED epitaxial wafer, these metals comprise copper, aluminium, silver, gold, titanium, nickel, chromium, iron, lead and alloy thereof.
3. the laser lift-off power-type LED chip on metal heat sink according to claim 1, it is characterized in that: the reflector successively is made up of Ni, Ag, Ti, Au, and Ni connects Ag and transparency electrode.
4. laser lift-off power-type LED chip production method on metal heat sink specifically may further comprise the steps:
Step 1, evaporation transparency electrode Ni/Au on Sapphire Substrate GaN epitaxial wafer;
Step 2, successively evaporation Ni, Ag, Ti, Au form the reflector on transparency electrode;
Step 3 is electroplated smooth, periodic metal heat sink unit, more than the thickness 50 μ m on the reflector;
Step 4, the heat sink epitaxial wafer of plating is peeled off Sapphire Substrate under the irradiation of Kr excimer laser, obtain n towards the last epitaxial wafer that is bonded in metal heat sink;
Step 5, at n-GaN surface plasma etching, successively evaporation Ti, Al, Ni, Au form n face electrode then;
Step 6 is sticked blue film to LED epitaxial wafer n face, obtains the GaN base LED epitaxial wafer that metal heat sink supports, and makes the tube core cellular spliting open.
5. the laser lift-off power-type LED chip production method on metal heat sink according to claim 4, it is characterized in that: described on transparency electrode evaporation reflector Ni/Ag/Ti/Au successively, gross thickness interconnects to each other at 100-2000nm, forms conductive network.
6. the laser lift-off power-type LED chip production method on metal heat sink according to claim 4, it is characterized in that: on the reflector, electroplate smooth, periodic metal heat sink unit, more than the thickness 50 μ m, spacing is 100-200 μ m between the unit.
7. the laser lift-off power-type LED chip production method on metal heat sink according to claim 4, it is characterized in that: with the plasma treatment N type GaN surface of Ar or N2 or O2 or CHF3 or CF4 or their mist, successively evaporation Ti, Al, Ni, Au form n face electrode on the n-GaN surface, n face electrode gross thickness obtains the ohmic contact of the n type GaN of non-alloying at 100-2000nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100098415A CN100383989C (en) | 2004-11-23 | 2004-11-23 | Laser stripped power LED chip on thermal metal deposition and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100098415A CN100383989C (en) | 2004-11-23 | 2004-11-23 | Laser stripped power LED chip on thermal metal deposition and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1779996A CN1779996A (en) | 2006-05-31 |
| CN100383989C true CN100383989C (en) | 2008-04-23 |
Family
ID=36770195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100098415A Expired - Fee Related CN100383989C (en) | 2004-11-23 | 2004-11-23 | Laser stripped power LED chip on thermal metal deposition and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100383989C (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
| WO2009005477A1 (en) * | 2007-07-04 | 2009-01-08 | Tinggi Technologies Private Limited | Separation of semiconductor devices |
| SG148895A1 (en) | 2007-07-04 | 2009-01-29 | Tinggi Technologies Private Ltd | Separation of semiconductor devices for light emission |
| KR101007117B1 (en) * | 2008-10-16 | 2011-01-11 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| CN102447015B (en) * | 2010-10-01 | 2015-11-25 | 陈祖辉 | A kind of light emitting diode with vertical structure |
| CN102148139B (en) * | 2010-12-31 | 2012-06-13 | 东莞市中镓半导体科技有限公司 | Improved method for eliminating residual stress of GaN epitaxial wafer by laser quasi-stripping |
| CN102157649B (en) * | 2011-01-31 | 2014-05-21 | 杭州士兰明芯科技有限公司 | Gallium nitride light-emitting diode (GaN LED) chip with vertical structure and manufacturing method thereof |
| CN108281527A (en) * | 2018-01-25 | 2018-07-13 | 映瑞光电科技(上海)有限公司 | A kind of preparation method of LED chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5724376A (en) * | 1995-11-30 | 1998-03-03 | Hewlett-Packard Company | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding |
| JP2003224297A (en) * | 2002-01-30 | 2003-08-08 | Nichia Chem Ind Ltd | Light emitting element |
| CN1527408A (en) * | 2003-03-03 | 2004-09-08 | 诠兴开发科技股份有限公司 | Bare crystal LED |
-
2004
- 2004-11-23 CN CNB2004100098415A patent/CN100383989C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5724376A (en) * | 1995-11-30 | 1998-03-03 | Hewlett-Packard Company | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding |
| JP2003224297A (en) * | 2002-01-30 | 2003-08-08 | Nichia Chem Ind Ltd | Light emitting element |
| CN1527408A (en) * | 2003-03-03 | 2004-09-08 | 诠兴开发科技股份有限公司 | Bare crystal LED |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1779996A (en) | 2006-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101604717B (en) | Vertical GaN-based LED chip and manufacture method thereof | |
| CN101366121B (en) | Vertical structure semiconductor devices | |
| CN103117334B (en) | GaN-based light emitting diode (LED) chips in vertical structure and manufacturing method thereof | |
| CN102044608A (en) | Flip-chip LED chip structure and manufacturing method thereof | |
| CN103560193B (en) | Light emitting diode chip with vertical of low cost and preparation method thereof | |
| CN101853903A (en) | Method for preparing gallium nitride-based light emitting diode with vertical structure | |
| CN112018223B (en) | Thin film flip structure Micro-LED chip with transfer printing of bonding layer and preparation method thereof | |
| CN102185075A (en) | Light-emitting diode with bonding reflecting layer and manufacturing method thereof | |
| CN104916771A (en) | Substrate-replaced normally-mounted GaN-based light-emitting diode chip and preparation method thereof | |
| CN100383989C (en) | Laser stripped power LED chip on thermal metal deposition and production thereof | |
| CN105742450A (en) | Preparation method for LED chip capable of forming light spots with specific planar geometric patterns through illumination, and structure of LED chip | |
| CN101345276B (en) | LED device and its preparing process | |
| CN108933187A (en) | A kind of light-emitting surface is the LED chip and preparation method thereof of specific plane geometric figure | |
| TW569474B (en) | Superluminent light emitting diode with plated substrate having reflecting mirror and the manufacturing method thereof | |
| CN102544251B (en) | Manufacturing method of large-power vertical light-emitting diode | |
| CN102522318B (en) | Self-splitting and transfer method for GaN-based epitaxial film | |
| CN103618034A (en) | Self-supporting vertical structural GaN-based LED chip and preparation method thereof | |
| CN105449065A (en) | Electrode preparation method for improving current expansion and luminous efficiency of GaAs-based light-emitting diode | |
| CN104393140A (en) | High-reflectiveness vertical structure light emitting diode chip and preparation method thereof | |
| CN102460743A (en) | Light emitting semiconductor device and method for manufacturing | |
| TWI282183B (en) | Total-reflection light emitting diode and production method thereof | |
| CN103474529B (en) | A kind of preparation method of vertical LED chip and vertical LED chip | |
| CN103137793A (en) | Vertical-structure LED (light emitting diode) production method utilizing multi-layer dielectric film reflection | |
| CN102157649B (en) | Gallium nitride light-emitting diode (GaN LED) chip with vertical structure and manufacturing method thereof | |
| TWI268003B (en) | Manufacturing method of LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: DONGGUAN INSTITUTE OF OPTO-ELECTRONICS PEKING UNIV Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20131202 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 523808 DONGGUAN, GUANGDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131202 Address after: 523808 Guangdong province Dongguan Songshan Lake high tech Industrial Development Zone Technology Park Building 4 Building 417, room 418 Patentee after: DONGGUAN INSTITUTE OF OPTO-ELECTRONICS PEKING University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080423 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |