CN108281527A - A kind of preparation method of LED chip - Google Patents
A kind of preparation method of LED chip Download PDFInfo
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- CN108281527A CN108281527A CN201810073526.0A CN201810073526A CN108281527A CN 108281527 A CN108281527 A CN 108281527A CN 201810073526 A CN201810073526 A CN 201810073526A CN 108281527 A CN108281527 A CN 108281527A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
The invention discloses a kind of preparation methods of LED chip, the preparation method passes through before carrying out roughening process to the surface of N-type epitaxy layer, plasma pretreatment first is carried out to N-type epitaxy layer, surface by the pretreated N-type epitaxy layer of the plasma is cleaner, and be conducive to subsequent roughening process, the uniformity of follow-up roughening process can be improved, the light extraction efficiency of single LED chip can be obviously improved, the Luminance Distribution of wafer scale LED chip is set more to concentrate simultaneously, to promote the yields of LED chip, it is suitable for batch production.
Description
Technical field
The invention belongs to semiconductor light emitting fields, more particularly to a kind of preparation method of LED chip.
Background technology
With the continuous development of light emitting diode (Light Emitting Diode, abbreviation LED) technology, LED chip has
Traditional positive assembling structure, inverted structure and vertical structure, because the LED chip of vertical structure have good heat dissipation, can carry it is big
The advantages that electric current, luminous intensity are high, power consumption is small, long lifespan, be widely used in general illumination, Landscape Lighting, special lighting,
The fields such as automotive lighting.
Currently, in the LED chip of vertical structure, roughening process usually is carried out to the surface of N-type epitaxy layer, to improve
The light extraction efficiency of LED chip, the influence of the roughening uniformity on N-type epitaxy layer surface to LED chip brightness and voltage are very big.So
And in the prior art, the roughening uniformity on N-type epitaxy layer surface is not good enough, and the light extraction efficiency of single LED chip is not high, makes
The Luminance Distribution for obtaining wafer scale LED chip is not concentrated, to influence the yields of LED chip.
Therefore, in view of the above technical problems, it is necessary to which a kind of preparation method of LED chip is provided.
Invention content
The present invention provides a kind of LED chip to solve the roughening homogeneity question on N-type epitaxy layer surface in LED chip
Preparation method promote the light extraction efficiency of single LED chip to improve the roughening uniformity on N-type epitaxy layer surface, make simultaneously
The Luminance Distribution of wafer scale LED chip is more concentrated, to promote the yields of LED chip.
In order to solve the above technical problems, the present invention provides a kind of preparation method of LED chip, the preparation method includes：
LED epitaxial structure is provided, the LED epitaxial structure includes substrate；It is sequentially formed in from bottom to top on the substrate
N-type epitaxy layer, quantum well layer and p-type epitaxial layer；
P electrode layer is formed on the p-type epitaxial layer；
Substrate is provided, the substrate is mutually bonded with the P electrode layer；
It removes the substrate and exposes part N-type epitaxy layer；
Plasma pretreatment is carried out to exposed N-type epitaxy layer；
Roughening process is carried out to the surface of the pretreated N-type epitaxy layer of the plasma；
N electrode is formed in N-type epitaxy layer after the roughening process.
Optionally, it removes the substrate and includes the step of exposing part N-type epitaxy layer：It is removed using laser lift-off
The substrate；N-type epitaxy layer, quantum well layer and the p-type epitaxial layer on Cutting Road are removed, until exposing P electrode layer；Form the
One protective layer, the side wall of the first protective layer covering Cutting Road and the P electrode layer exposed, to expose part N-type extension
Layer.
Preferably, in the preparation method, first protective layer is SiO2 layers, Si3N4 layers or Al2O3 layers.
Optionally, it removes the substrate and includes the step of exposing part N-type epitaxy layer：It is removed using laser lift-off
The substrate；Form the second protective layer, the N-type epitaxy layer in the second protective layer covering Cutting Road region, to expose part N
Type epitaxial layer.
Preferably, in the preparation method, second protective layer is SiO2 layers, Si3N4 layers or Al2O3 layers.
Further, in the preparation method, the plasma pretreatment is carried out using oxygen gas plasma.
Further, in the preparation method, the roughening process is carried out using wet-etching technology.
Further, in the preparation method, the LED epitaxial structure further includes being formed in the substrate and described
Unintentional doped epitaxial layer between N-type epitaxy layer.
Optionally, in the preparation method, after removing the substrate using laser lift-off, using dry etching
Technique removes the unintentional doped epitaxial layer.
Further, in the preparation method, include in the step of forming P electrode layer on the p-type epitaxial layer：Shape
At reflection electrode layer, the emission electrode layer covers the p-type epitaxial layer；Bonding metal layer is formed, in the reflection electrode layer
Upper to form the bonding metal layer, the reflection electrode layer and the bonding metal layer are collectively as the P electrode layer.
Optionally, in the preparation method, the N electrode is answering for Ni/Au, Cr/Pt/Au or Al/Ti/Pt/Au
Close structure.
Optionally, in the preparation method, the substrate is Si substrates, W/Cu substrates or Mo/Cu substrates.
Compared with prior art, the invention has the advantages that：
The preparation method of LED chip provided by the invention by the surface of N-type epitaxy layer carry out roughening process before,
Plasma pretreatment first is carried out to N-type epitaxy layer, the surface by the pretreated N-type epitaxy layer of the plasma is more
Totally, and be conducive to subsequent roughening process, the uniformity of follow-up roughening process can be improved, single LED can be obviously improved
The light extraction efficiency of chip, while the Luminance Distribution of wafer scale LED chip being made more to concentrate, to promote the non-defective unit of LED chip
Rate is suitable for batch production.
Description of the drawings
Fig. 1 is a kind of flow chart of the preparation method of LED chip of the present invention；
Fig. 2 to Figure 10 is LED chip in a kind of each processing step of the preparation method of LED chip in the embodiment of the present invention 1
Structural schematic diagram；
Figure 11 to Figure 16 is LED chip in a kind of each processing step of the preparation method of LED chip in the embodiment of the present invention 2
Structural schematic diagram.
Specific implementation mode
A kind of preparation method of LED chip of the present invention is retouched in more detail below in conjunction with flow chart and schematic diagram
It states, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can change described here hair
It is bright, and still realize the advantageous effects of the present invention.Therefore, following description should be understood as the wide of those skilled in the art
It is general to know, and it is not intended as limitation of the present invention.
The present invention is more specifically described by way of example with reference to attached drawing in the following passage.It is wanted according to following explanation and right
Ask book, advantages and features of the invention that will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Core of the invention thought is that the present invention provides a kind of preparation method of LED chip, as shown in Figure 1, the system
Preparation Method includes the following steps：
Step S1, LED epitaxial structure is provided, the LED epitaxial structure includes substrate；It is sequentially formed in from bottom to top described
N-type epitaxy layer, quantum well layer on substrate and p-type epitaxial layer；
Step S2, P electrode layer is formed on the p-type epitaxial layer；
Step S3, substrate is provided, the substrate is mutually bonded with the P electrode layer；
Step S4, it removes the substrate and exposes part N-type epitaxy layer；
Step S5, plasma pretreatment is carried out to exposed N-type epitaxy layer；
Step S6, roughening process is carried out to the surface of the pretreated N-type epitaxy layer of the plasma；
Step S7, N electrode is formed in the N-type epitaxy layer after the roughening process.
The present invention to N-type epitaxy layer by before carrying out roughening process to the surface of N-type epitaxy layer, first carrying out plasma
Body pre-processes, and the surface by the pretreated N-type epitaxy layer of the plasma is cleaner, and is conducive to subsequent thick
Chemical industry skill can improve the uniformity of follow-up roughening process, can be obviously improved the light extraction efficiency of single LED chip, make simultaneously
The Luminance Distribution of wafer scale LED chip is more concentrated, and to promote the yields of LED chip, is suitable for batch production.
The embodiment for being exemplified below a kind of preparation method of LED chip should clearly to illustrate present disclosure
It is clear that present disclosure is not restricted to following embodiment, other pass through the conventional skill of those of ordinary skill in the art
The improvement of art means is also within the thought range of the present invention.
Embodiment 1：
First, referring to Fig. 1, executing step S1, LED epitaxial structure is provided, the LED epitaxial structure includes：Substrate 10；
Unintentional doped epitaxial layer 11, N-type epitaxy layer 12, quantum well layer 13 and the p-type epitaxial layer sequentially formed on the substrate 10
14, as shown in Figure 2.
Specifically, Sapphire Substrate, SiC, ZnS, ZnO or GaAs etc., which can be used, in the substrate 10 is suitable for LED chip system
The substrate made, in the present embodiment, the substrate 10 preferably uses Sapphire Substrate.Described unintentional mix is formed using epitaxy method
Miscellaneous epitaxial layer 11, N-type epitaxy layer 12, quantum well layer 13 and p-type epitaxial layer 14.Epitaxial growth method can select MOCVD (metals
Organic chemical vapor deposition) method, CVD (chemical vapor deposition) method, PECVD (plasma enhanced chemical vapor deposition) side
Method, MBE (molecular beam epitaxy) methods or HVPE (hydride gas-phase epitaxy) method etc., in the present embodiment, epitaxial growth method can
In preferred MOCVD methods, do not limit herein.The unintentional doped epitaxial layer 11 can be reduced due to substrate 10 and N-type
Lattice mismatch caused by lattice constant difference between epitaxial layer 12, and the unintentional doped epitaxial layer 11 can enhance shape
At the crystal property of the epitaxial layer on this layer.The N-type epitaxy layer 12 can be, but not limited to as N-type GaN layer 12.
Then, referring to Fig. 1, executing step S2, P electrode layer 20 is formed on the p-type epitaxial layer 14, as shown in Figure 3.
Preferably, the P electrode layer 20 includes reflection electrode layer and bonding metal layer, wherein the reflection electrode layer is located at the p-type
On epitaxial layer 14, the reflection electrode layer can be single or multi-layer structure, the material of the reflection electrode layer may include Ag,
At least one of materials such as Au, Al, Ti, Ni, Pt, in the present embodiment, the material of the reflection electrode layer preferably uses Ag；So
Afterwards, bonding metal layer is formed on the reflection electrode layer, the bonding metal layer may be single or multi-layer structure, described
The material of bonding metal layer may include at least one of the materials such as Au, Sn, Ag, Al, Ti, Ni, Pt, described in the present embodiment
Bonding metal layer preferably uses Au/Sn composite layers.
Then, referring to Fig. 1, executing step S3, substrate 21 is provided, by the substrate 21 and 20 phase key of the P electrode layer
It closes, as shown in Figure 4.Specifically, the substrate 21 is used as bonded substrate, can be the metal liner of Si substrates or electric-conductivity heat-conductivity high rate
Bottom (such as W/Cu substrates or Mo/Cu substrates).
Again referring to Fig. 1, executing step S4, removes the substrate 10 and expose part N-type epitaxy layer 12.Specifically,
In the present embodiment, first, the substrate 10 is removed using laser lift-off, as shown in Figure 5；Then, using dry etch process
The unintentional doped epitaxial layer 11 is removed, the dry etching can be, but not limited to ICP (Inductively Couple
Plasma Etch, sense coupling) method, ICP method is using Cl2、BCl3Or its mixed gas, ICP method can reach
To industrially without charge destroy, minimum limit pollution, residue removal ability, high ash rate standard.Preferably, in the present embodiment
In, while removing unintentional doped epitaxial layer 11, epitaxial layer (the part N-type on Cutting Road can also be removed
Epitaxial layer 12, part quantum well layer 13 and part p-type epitaxial layer 14) until the P electrode layer 20 is exposed, form MESA platforms
Face, preferably, about 45 degree~75 degree of the Sidewall angles of Cutting Road, as shown in Figure 6.It should be noted that the Cutting Road is for dividing
Every multiple MESA table tops.For ease of illustration, a MESA table top is illustrated only in Fig. 6, however it should be clear that in actual process
In, according to the single led chip unit area of Substrate Area and design, several LED core blade units can be marked off by Cutting Road；
Then, the first protective layer 30 is formed, first protective layer 30 covers the side wall of Cutting Road and the P electrode layer 20 exposed, such as
Shown in Fig. 7, the protective layer 30 plays the epitaxial layer of Cutting Road side wall and the P electrode layer 20 exposed in the work of a protection
With in order to avoid by the pretreated influence of follow-up plasma, the material of the first protective layer 30 can be, but not limited to SiO2、Si3N4Or
Al2O3.And those of ordinary skill in the art are readily comprehensible, and depositing operation may be used, lithographic etch process forms described first
Protective layer 30, this will not be repeated here.
Next, referring to Fig. 1, step S5 is executed, to the exposed progress plasma pretreatment of N-type epitaxy layer 12.Compared with
Good, using oxygen plasmon (O2Plasma pretreating process) is carried out to exposed N-type epitaxy layer 12, as shown in Figure 8.Institute
Following advantageous effect can be generated by stating the pretreated process of plasmon：The plasma preprocessing process can be equivalent to pair
The surface of exposed N-type epitaxy layer 12 carries out plasma clean, then the pretreated N-type epitaxy layer of the plasma 12
Surface is cleaner；Moreover, the surface of the plasma pretreatment bombardment N-type epitaxy layer 12, can weaken 12 table of N-type epitaxy layer
The binding force (such as binding force of Ga-N keys) of the chemical bond in face, to be conducive to subsequent roughening process.
Then, referring to Fig. 1, executing step S6, to the surface of the pretreated N-type epitaxy layer of the plasma 12 into
Row roughening process.Preferably, in the present embodiment, roughening process is carried out using wet-etching technology, such as may be used KOH solution or
H3PO4Solution carries out roughening process, locates in advance to the progress plasma of N-type epitaxy layer 12 because before this roughening process step, having
Reason, then the roughening uniformity by the surface (such as convex-concave surface) of the N-type epitaxy layer 12 after roughening process is more preferable, makes chip surface
It is formed with the pyramid micro-structure conducive to light extraction, as shown in Figure 9.The roughening process can reduce or destroy epitaxial layer material
Material and the total reflection at Air Interface, can improve the light extraction efficiency of LED chip；Moreover, by being pre-processed in plasma
It carries out roughening process again afterwards, the roughening uniformity on 12 surface of N-type epitaxy layer can be improved, hence it is evident that promote the light of single LED chip
Extraction efficiency, while the Luminance Distribution of wafer scale LED chip is more concentrated, to promote LED chip yields, it is suitable for
Batch production.
Finally, referring to Fig. 1, executing step S7, N electrode 31 is formed in the N-type epitaxy layer 12 after the roughening process.
Preferably, the N electrode 31 can be formed by evaporation coating method, as shown in Figure 10, Ni/Au, Cr/ can be used in the N electrode 31
The composite constructions such as Pt/Au or Al/Ti/Pt/Au.
In the present embodiment, because before carrying out roughening process to the surface of N-type epitaxy layer 12, first to N-type epitaxy layer
12 carry out oxygen gas plasma pretreatments, and the surface by the pretreated N-type epitaxy layer of the oxygen gas plasma 12 is more
Totally, and be conducive to subsequent roughening process, the uniformity of follow-up roughening process can be improved, single LED can be obviously improved
The light extraction efficiency of chip, while the Luminance Distribution of wafer scale LED chip being made more to concentrate, to promote the non-defective unit of LED chip
Rate is suitable for batch production.
Embodiment 2：
1 is please referred to Fig.1 to Figure 16, wherein reference label identical with Fig. 2 to Figure 10 indicates identical with first embodiment
Structure.The step of the step S1 to step S3 and the preparation method of the first embodiment of the preparation method of the second embodiment
Rapid S1 to S3 is identical, does not do repetition introduction herein.
Then, the step S4 of the preparation method of the second embodiment is as follows：It removes the substrate 10 and exposes part N
Type epitaxial layer 12, specifically, first, the substrate 10 is removed using laser lift-off；Then, it is only gone using dry etch process
Except the unintentional doped epitaxial layer 11, as shown in figure 11；Then, the second protective layer 30 ', institute are formed in N-type epitaxy layer 12
The locality protection that the second protective layer 30 ' will be ultimately to be formed chip cutting road is stated, will subsequently need to carry out roughening process
The N-type epitaxy layer 12 in region is exposed and (exposes part N-type epitaxy layer 12), as shown in figure 12.Second protective layer
30 ' material can be, but not limited to SiO2、Si3N4Or Al2O3, specifically, depositing operation, lithographic etch process shape can also be used
At second protective layer 30 ', this is that those of ordinary skill in the art are readily comprehensible, and this will not be repeated here.
Then, step S5 is executed, plasma pretreatment is carried out to the exposed N-type epitaxy layer 12.Preferably, using
Oxygen plasmon (O2Plasma pretreating process) is carried out to the exposed N-type epitaxy layer 12, as shown in figure 13.
Then, step S6 is executed, roughening work is carried out to the surface of the pretreated N-type epitaxy layer of the plasma 12
Skill, as shown in figure 14.
In addition, in the present embodiment, in actual process, before forming N electrode, the second of Cutting Road region can be also removed
Partial epitaxial layer on protective layer 30 ' and Cutting Road forms MASA table tops until expose P electrode layer 20, as shown in figure 15,
These are all one of ordinary skill in the art will appreciate that with being readily apparent that, this will not be repeated here.
Finally, step S7 is executed, N electrode 31 is formed in the N-type epitaxy layer 12 after the roughening process, obtains such as Figure 16
Shown in LED chip structure schematic diagram.
In the present embodiment, equally before carrying out roughening process to the surface of N-type epitaxy layer 12, first to exposed N-type
Epitaxial layer 12 carries out oxygen gas plasma pretreatment, by the table of the pretreated N-type epitaxy layer of the oxygen gas plasma 12
Face is cleaner, and is conducive to subsequent roughening process, can improve the uniformity of follow-up roughening process, can be obviously improved list
The light extraction efficiency of LED chip, while the Luminance Distribution of wafer scale LED chip being made more to concentrate, to promote LED chip
Yields is suitable for batch production.
To sum up, the preparation method of LED chip provided by the invention on the surface to N-type epitaxy layer by carrying out roughening process
Before, plasma pretreatment first is carried out to N-type epitaxy layer, by the table of the pretreated N-type epitaxy layer of the plasma
Face is cleaner, and is conducive to subsequent roughening process, can improve the uniformity of follow-up roughening process, can be obviously improved list
The light extraction efficiency of LED chip, while the Luminance Distribution of wafer scale LED chip being made more to concentrate, to promote LED chip
Yields is suitable for batch production.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (12)
1. a kind of preparation method of LED chip, which is characterized in that the preparation method includes：
LED epitaxial structure is provided, the LED epitaxial structure includes substrate；The N-type being sequentially formed in from bottom to top on the substrate
Epitaxial layer, quantum well layer and p-type epitaxial layer；
P electrode layer is formed on the p-type epitaxial layer；
Substrate is provided, the substrate is mutually bonded with the P electrode layer；
It removes the substrate and exposes part N-type epitaxy layer；
Plasma pretreatment is carried out to exposed N-type epitaxy layer；
Roughening process is carried out to the surface of the pretreated N-type epitaxy layer of the plasma；
N electrode is formed in N-type epitaxy layer after the roughening process.
2. preparation method as described in claim 1, which is characterized in that remove the substrate and expose part N-type epitaxy layer
The step of include：
The substrate is removed using laser lift-off；
N-type epitaxy layer, quantum well layer and the p-type epitaxial layer on Cutting Road are removed, until exposing P electrode layer；
The first protective layer, the side wall of the first protective layer covering Cutting Road and the P electrode layer exposed are formed, to expose portion
Divide N-type epitaxy layer.
3. preparation method as claimed in claim 2, which is characterized in that first protective layer is SiO2Layer, Si3N4Layer or
Al2O3Layer.
4. preparation method as described in claim 1, which is characterized in that remove the substrate and expose part N-type epitaxy layer
The step of include：
The substrate is removed using laser lift-off；
Form the second protective layer, the N-type epitaxy layer in the second protective layer covering Cutting Road region, to expose outside the N-type of part
Prolong layer.
5. preparation method as claimed in claim 4, which is characterized in that second protective layer is SiO2Layer, Si3N4Layer or
Al2O3Layer.
6. the preparation method as described in claim 1 to 5 any one, which is characterized in that carry out institute using oxygen gas plasma
State plasma pretreatment.
7. the preparation method as described in claim 1 to 5 any one, which is characterized in that carry out institute using wet-etching technology
State roughening process.
8. the preparation method as described in claim 2 to 5 any one, which is characterized in that the LED epitaxial structure further includes shape
Unintentional doped epitaxial layer between substrate described in Cheng Yu and the N-type epitaxy layer.
9. preparation method as claimed in claim 8, which is characterized in that after removing the substrate using laser lift-off, adopt
The unintentional doped epitaxial layer is removed with dry etch process.
10. the preparation method as described in claim 1 to 5 any one, which is characterized in that form P on the p-type epitaxial layer
The step of electrode layer includes：
Reflection electrode layer is formed, the emission electrode layer covers the p-type epitaxial layer；
Bonding metal layer is formed, forms the bonding metal layer on the reflection electrode layer, the reflection electrode layer and described
Bonding metal layer is collectively as the P electrode layer.
11. the preparation method as described in claim 1 to 5 any one, which is characterized in that the N electrode is Ni/Au, Cr/
The composite construction of Pt/Au or Al/Ti/Pt/Au.
12. the preparation method as described in claim 1 to 5 any one, which is characterized in that the substrate is Si substrates, W/Cu
Substrate or Mo/Cu substrates.
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Address after: 201306 1889 Hong Yin Road, Lingang industrial area, Pudong New Area, Shanghai Applicant after: EnRay Tek Optoelectronics (Shanghai) Co., Ltd. Address before: 201306 Hongyin Road 1889, Lingang Industrial Zone, Jing'an District, Shanghai Applicant before: EnRay Tek Optoelectronics (Shanghai) Co., Ltd. |
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