CN102082214B - Method for preparing GaN-based light emitting diode (LED) semiconductor chip - Google Patents

Method for preparing GaN-based light emitting diode (LED) semiconductor chip Download PDF

Info

Publication number
CN102082214B
CN102082214B CN201010563394A CN201010563394A CN102082214B CN 102082214 B CN102082214 B CN 102082214B CN 201010563394 A CN201010563394 A CN 201010563394A CN 201010563394 A CN201010563394 A CN 201010563394A CN 102082214 B CN102082214 B CN 102082214B
Authority
CN
China
Prior art keywords
gan
layer
alinn
led
semiconductor chip
Prior art date
Application number
CN201010563394A
Other languages
Chinese (zh)
Other versions
CN102082214A (en
Inventor
尹以安
闫其昂
牛巧利
章勇
Original Assignee
华南师范大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华南师范大学 filed Critical 华南师范大学
Priority to CN201010563394A priority Critical patent/CN102082214B/en
Publication of CN102082214A publication Critical patent/CN102082214A/en
Application granted granted Critical
Publication of CN102082214B publication Critical patent/CN102082214B/en

Links

Abstract

The invention discloses a method for preparing a GaN-based light emitting diode (LED) semiconductor chip. The GaN-based light emitting diode (LED) semiconductor chip is prepared by inserting a AlInN sacrifice layer into the conventional GaN-based LED structure on the basis of the wet-process etching property of a AlInN material to realize the settlement of sapphire and the separation of an epitaxial layer and transferring the epitaxial layer to a copper substrate with high electric conductivity and high heat conductivity through the combination of a chip bonding technique, plating and the like. The light output power, electric performance, light emitting performance and structural performance of the GaN-based LED semiconductor chip manufactured by the method disclosed by the invention are obviously improved, the manufacturing cost is low, the manufacturing is simple and easy, the adverse influences of a sapphire substrate element are eliminated radically, and the GaN-based LED semiconductor chip is suitable to be promoted and used in the field of LEDs or the preparation of semiconductor elements.

Description

A kind of preparation method of GaN base LED semiconductor chip

Technical field

The present invention relates to the semiconductor chip field, be specifically related to a kind of preparation method of GaN base LED semiconductor chip.

Background technology

GaN is that III-V compounds of group is the semiconductor material with wide forbidden band of important direct band gap; (NAKAMURA S. J Cryst Growth has wide practical use in indigo plant, green glow and opto-electronic devices such as ultraviolet light-emitting diodes (L ED), short wavelength laser diode (LD), power electronic device and ultraviolet detector; 1997,170: 11~15.; MORKOC H, STRITE S, GAO GB et al. J A P, 1994,76: 1363~1398.).Because nature lacks the GaN monocrystal material, the growth of body monocrystalline GaN is extremely difficult again, and the method for heteroepitaxy is mainly adopted in the growth of GaN material, selects sapphire (Al usually for use 2O 3) as the substrate of heteroepitaxy, but sapphire and GaN have 16% lattice mismatch, cause to have highdensity line defect in the epitaxial crystal structure; Al 2O 3Poor electric conductivity, resistivity is greater than 10 under the normal temperature 11Ω cm causes the GaN base device to be difficult to make upper/lower electrode, must adopt p, n electrode with the table top electrode structure; Make device preparation technology complicated, influence characteristic (Cao X A, the Teet sov J M such as current expansion, Output optical power of device; D ' Evelyn M P; Et al. [J]. Appl Phys Let t, 2004,85 (1): 729.; Yang H S, Han S Y, Baik K H, et al. [J]. Appl Phys Let t, 2005,86 (10): 102104.); Moreover, Al 2O 3Heat conductivility is not good yet; Thermal conductivity is about 0. 25W/ cm K, makes that the heat dissipation problem of GaN base device is outstanding, especially serious (STEIGERWALD D A in high power device and LD; BHAT J C; COLL INS D et al. IEEE Journal on Selected Topics in Quantum Electronics, 2002,8: 310~320.); The existence of these problems makes that separating of Sapphire Substrate and epitaxial film materials is very necessary, and has impelled GaN epitaxial loayer and Sapphire Substrate Research of Separation Technique and development.

Adopt lift-off technology can realize separating of Sapphire Substrate and epitaxial loayer; Human abrasive method separating substrate and GaN epitaxial material arranged; But sapphire is owing to hardness height, fragility are big, very difficult to its machining; Not only strengthened the device technology difficulty, and sapphire can't reuse.Studying at present and using maximum is laser lift-off; Propose to adopt the pulse laser of wavelength 355nm GaN epitaxial loayer and Sapphire Substrate to be peeled off (Kelly M K, Ambaeher O, Dahlheimer B first from Kelly in 1996; Et al. [J}.APPI Phys Lett; 1996,69 (12): 174921751.), this technology has obtained fast development.But it is high that this technical deficiency part is cost, and technology is complicated.

Equipment is simple, easy to operate to be reached advantages such as material damage are little and wet etching has; To most III-V compound semiconductor system; Be used for preparing complicated three-dimensional microstructures through eroding sacrifice layer high selectivity lateral encroaching, and this technology is widely used; But, because but having limited this technological transplanting, the stability of III group-nitride based materials uses, relevant document is the existing relevant report (F.Rizzi of lateral encroaching of sacrifice layer to AlInN;, K.Bejtka; P.R.Edwards; R.W.Martin, I.M.Watsona, Journal of Crystal Growth 300 (2007) 254 – 258.; D.Simeonov, a E.Feltin .Altoukhov; A.Castiglia; J.-F.Carlin, R.Butt é, and N.Grandjean. APPLIED PHYSICS LETTERS 92; 171102 (2008) .), but utilize this characteristic of AlInN material wet etching to realize the report that substrate-transfer is also not relevant.

Summary of the invention

The objective of the invention is to according to the GaN that occurs in conventional semiconductor chip base LED Sapphire Substrate thermal conductivity, poor electric conductivity and and GaN material lattice mismatch greatly to the influence of LED device optics and electric property; A kind of method that realizes that Sapphire Substrate is separated with epitaxial loayer is provided, finally realizes a kind of low cost, simple the preparation method who prepares GaN based LED chip of great power.

Above-mentioned purpose of the present invention is achieved through following technical scheme:

Technical program of the present invention lies in utilizing the wet etching character of AlInN material to realize separating of Sapphire Substrate and epitaxial loayer; In conjunction with chip adhesive technology, electroplating technology etc. the GaN epitaxial loayer is transferred on the high copper substrate of conductivity, thermal conductivity; Thereby the method that provides a kind of low cost to prepare GaN based LED chip of great power thoroughly solves the adverse effect that Sapphire Substrate is brought to device simplely.

The content that the present invention is concrete:

The present invention at first etches AlInN layer sidewall with photoetching and the ICP lithographic technique GaN LED structure extension sheet of will having grown; Again epitaxial layer structure is adhered on the glass substrate; Utilize the ammonia type to bite and agent 1 again; 2-diaminoethanes solution (DAE) erodes the AllnN sacrifice layer, forms separating of epitaxial loayer and Sapphire Substrate.Then after wet etching is realized the transfer of Sapphire Substrate; Utilize photoetching technique to combine electroplating technology on the n-GaN layer, to realize graphical Cu metal substrate; Method through the expansion adhesive tape obtains the single chip of LED easily, has solved the problem that led chip is adhered to chip scribing cutting on the metal substrate.

The present invention also places epitaxial wafer and electroplates level CuSO 4Electroplate in the solution, form the Cu substrate-transfer of GaN LED structure;

In growth LED structure extension sheet process, the AlInN that between μ-GaN resilient coating and n-GaN layer, inserts one deck and GaN lattice match is as sacrifice layer, and then other each epitaxial loayers of growing.

Chip epitaxial structure before the substrate-transfer according to the invention comprises Sapphire Substrate (Al 2O 3), GaN resilient coating, AlInN sacrifice layer, n-GaN layer, the sub-crystal structure of InGaN/GaN volume, p-AGaN layer, p-GaN layer, be followed successively by Sapphire Substrate (Al from bottom to up 2O 3), GaN resilient coating, AlInN sacrifice layer, n-GaN layer, InGaN/GaN multiple quantum well layer, p-AGaN layer, p-GaN layer.

The thickness of GaN resilient coating according to the invention is 15 ~ 30nm; The thickness of n-GaN layer is 1.5 ~ 2 μ m, and the thickness of AlInN sacrifice layer is 50 ~ 200nm, and InGaN/GaN MQW layer thickness is 20 ~ 60nm; Mix p-AGaN layer 10 ~ 20nm of Mg, mix p-GaN layer 100 ~ 200nm of Mg.

The present invention carries out etching with the ICP lithographic technique to the epitaxial loayer before shifting, and etching depth is: from the p-GaN laminar surface to μ-and GaN layer lower surface;

Comprise Ni/Au metal level, p-GaN layer, p-AGaN layer, InGaN/GaN multiple quantum well layer in the structure after the substrate-transfer of the present invention from top to bottom successively, n-GaN layer, Ti/Ag metal level, the Cu substrate that dispels the heat.

Compared with prior art, the present invention has following beneficial effect:

The GaN base LED semiconductor chip optical output power that the inventive method makes significantly improves; Electric property, luminescent properties and structural behaviour are obviously improved; Cost of manufacture is low; Simple, thoroughly solved Sapphire Substrate to the adverse effect that device brings, be suitable in LED field or semiconductor device preparation, promoting the use of.

Description of drawings

Fig. 1 is the profile of the whole epitaxial structure of growth on the sapphire lining;

Fig. 2 carries out the profile after the etching with photoetching and ICP lithographic technique with figure one epitaxial layer structure; ICP etches the AlInN sidewall in order to preparing for its wet etching;

Fig. 3 is adhered to the profile after the glass substrate with figure two;

Fig. 4 is that corrosion realizes the profile after sapphire and epitaxial loayer are peeled off to figure three epitaxial layer structure AlInN;

Fig. 5 utilizes the profile of electron beam evaporation technique after plating the Ti/Ag metal level on the n-GaN layer to figure four structures;

Fig. 6 utilizes photoetching technique Ti/Ag metal level in figure five structures to realize the graphical of photoresist; So that for realizing graphical Cu substrate; Because whole LED epitaxial loayer figure Cu substrate supports; Method through the expansion adhesive tape obtains the single chip of LED easily, has solved the problem that led chip is adhered to chip scribing cutting on the metal substrate;

Fig. 7 is the profile behind the plated metal Cu on the n-GaN layer in figure six structures;

Fig. 8 is with the profile behind epoxide-resin glue and the photoresist in acetone solvent removal figure seven structures;

Fig. 9 utilizes photoetching and ICP etching figure eight structures, etches into the profile of n-GaN lower surface;

Figure 10 utilizes photoetching and the profile of electron beam evaporation technique after the p-GaN surface plates the Ni/Au metal electrode.

Among the above-mentioned figure, 1 is the p-GaN layer; 2 is p-AlGaN; 3 is InGaN/GaN volume sublayer; 4 is the n-GaN layer; 5 is the AlInN layer; 6 is the GaN resilient coating; 7 is Sapphire Substrate; 8 is epoxide-resin glue; 9 is glass substrate; 10 is the Ti/Ag metal level; 11 is photoresist; 12 is the Cu substrate layer; 13 is adhesive tape; 14 is the Ni/Au metal level.

Embodiment

Come further to explain the present invention below in conjunction with embodiment, but embodiment does not do any type of qualification to the present invention.

(1) on Sapphire Substrate 7, distinguish epitaxial growth μ-GaN layer 6, AlInN sacrifice layer 5, n-GaN layer 4, InGaN/GaN multiple quantum well layer 3, p-AGaN layer 2 and p-GaN layer 1 with metallochemistry vapor phase epitaxy (MOCVD) technology, epitaxial layer structure is as shown in Figure 1;

(2) etch the AlInN sidewall with photoetching and ICP technology, so that carry out the lateral encroaching of AlInN sacrifice layer 5, structure is as shown in Figure 2;

(3) utilize epoxide-resin glue that above-mentioned epitaxial structure is adhered on the glass substrate, structure is as shown in Figure 3;

(4) with the DAE solution of 1M said structure is corroded and remove AlInN sacrifice layer 5, it is as shown in Figure 4 to get rid of AlInN sacrifice layer 5 back structures;

(5) deposited by electron beam evaporation is at n-GaN layer 4 vapor deposition Ti/Ag metal electrode layer 10 successively respectively, and structure is as shown in Figure 5 respectively;

(6) utilize photoetching technique to obtain structure as shown in Figure 6, think that electroplating Cu substrate 12 prepares;

(7) the said structure sample is placed a plating level CuSO 4The about 70min of energising in the solution electroplates the metal Cu that the last layer homogeneous thickness is about 100 μ m in the Ti/Ag metal surface, as shown in Figure 7;

(8) utilize acetone soln to remove epoxide-resin glue 8 and photoresist 11, structure is as shown in Figure 8;

(9) utilize photoetching and ICP lithographic technique that the above-mentioned epitaxial layer structure that relates to is etched into the small size tube core, die shape is designed to square, and area is 1mm * 1mm, etches into n type layer lower surface, and structure is as shown in Figure 9;

(10) utilize photoetching and electron beam evaporation technique to make Ni/Au ohmic contact N electrode 14; Because whole LED epitaxial loayer figure Cu substrate 12 supports; Method through the expansion adhesive tape obtains the single chip of LED easily, does not need extra cutting process, and structure is shown in figure 10.

The method that the present invention proposes a kind of wet etching AlInN sacrifice layer prepares the method for GaN light emitting diode (LED) chip with vertical structure, also can be used for the preparation of other semiconductor device, promptly is not limited to the application in the LED field.

Claims (1)

1. the preparation method of a GaN base LED semiconductor chip is characterized in that said method comprises the steps:
(1) on Sapphire Substrate, distinguishes epitaxial growth μ-GaN layer, AlInN sacrifice layer, n-GaN layer, InGaN/GaN multiple quantum well layer, p-AlGaN layer and p-GaN layer with metallochemistry vapor phase epitaxy method;
(2) etch the AlInN sidewall with photoetching and ICP method, so that carry out the lateral encroaching of AlInN sacrifice layer;
(3) utilize epoxide-resin glue that epitaxial structure is adhered on the glass substrate;
(4) with 1,2-diaminoethanes solution corrodes, and gets rid of the AlInN sacrifice layer;
(5) the difference deposited by electron beam evaporation is at n-GaN layer vapor deposition Ti/Ag metal electrode layer successively;
(6) utilize the structure sample that photolithographic processes step (1)-(5) obtain, prepare for electroplating the Cu substrate;
(7) structure sample with step (6) gained places a plating level CuSO 4The 70min that switches in the solution, electroplating the last layer homogeneous thickness in the Ti/Ag metal surface is the metal Cu of 100 μ m;
(8) utilize acetone soln to remove epoxide-resin glue and photoresist;
(9) utilize photoetching and ICP etching method, epitaxial structure is etched into the small size tube core, etch into n type layer lower surface;
(10) utilize photoetching and electron-beam vapor deposition method, make Ni/Au ohmic contact N electrode, support,, obtain the single chip of GaN base LED semiconductor through the method for expansion adhesive tape through whole LED epitaxial loayer figure Cu substrate (12);
Said epitaxial structure comprises Sapphire Substrate (Al 2O 3), GaN resilient coating, AlInN sacrifice layer, n-GaN layer, InGaN/GaN multi-quantum pit structure, p-AlGaN layer, p-GaN layer.
CN201010563394A 2010-11-29 2010-11-29 Method for preparing GaN-based light emitting diode (LED) semiconductor chip CN102082214B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201010563394A CN102082214B (en) 2010-11-29 2010-11-29 Method for preparing GaN-based light emitting diode (LED) semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010563394A CN102082214B (en) 2010-11-29 2010-11-29 Method for preparing GaN-based light emitting diode (LED) semiconductor chip

Publications (2)

Publication Number Publication Date
CN102082214A CN102082214A (en) 2011-06-01
CN102082214B true CN102082214B (en) 2012-09-26

Family

ID=44088058

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010563394A CN102082214B (en) 2010-11-29 2010-11-29 Method for preparing GaN-based light emitting diode (LED) semiconductor chip

Country Status (1)

Country Link
CN (1) CN102082214B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751408A (en) * 2012-06-27 2012-10-24 中国科学院半导体研究所 Light emitting diode by taking graphene film as current carrier injection layer
CN102751407A (en) * 2012-06-27 2012-10-24 中国科学院半导体研究所 Vertical-structure light emitting diode by taking graphene film as current carrier injection layer
US8981432B2 (en) * 2012-08-10 2015-03-17 Avogy, Inc. Method and system for gallium nitride electronic devices using engineered substrates
CN103594601A (en) * 2013-10-22 2014-02-19 溧阳市东大技术转移中心有限公司 Light emitting diode structure
CN103606602A (en) * 2013-10-22 2014-02-26 溧阳市东大技术转移中心有限公司 Method for manufacturing semiconductor chip
CN103779460A (en) * 2014-02-13 2014-05-07 马鞍山太时芯光科技有限公司 Light emitting device chip and manufacturing method thereof
CN104362196A (en) * 2014-11-25 2015-02-18 苏州矩阵光电有限公司 InGaAs infrared detector and preparing method thereof
CN106298456A (en) * 2016-09-19 2017-01-04 成都海威华芯科技有限公司 The substrate transfer method of vertical stratification power semiconductor
CN106298458B (en) * 2016-09-22 2018-12-25 成都海威华芯科技有限公司 A kind of substrate transfer method of power semiconductor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884646B1 (en) * 2004-03-10 2005-04-26 Uni Light Technology Inc. Method for forming an LED device with a metallic substrate
CN101494267A (en) * 2008-11-24 2009-07-29 厦门市三安光电科技有限公司 Preparation method for gallium nitride base light-emitting device based on substrate desquamation
JP2009184847A (en) * 2008-02-04 2009-08-20 Ngk Insulators Ltd Method for manufacturing group iii nitride single crystal
TW201025673A (en) * 2008-12-30 2010-07-01 Univ Nat Chunghsing The method to produce a light emitting device module

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2950106B2 (en) * 1993-07-14 1999-09-20 松下電器産業株式会社 Method for manufacturing an optical element mounted body
KR101525076B1 (en) * 2008-12-15 2015-06-03 삼성전자 주식회사 Fabricating method of light emitting element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884646B1 (en) * 2004-03-10 2005-04-26 Uni Light Technology Inc. Method for forming an LED device with a metallic substrate
JP2009184847A (en) * 2008-02-04 2009-08-20 Ngk Insulators Ltd Method for manufacturing group iii nitride single crystal
CN101494267A (en) * 2008-11-24 2009-07-29 厦门市三安光电科技有限公司 Preparation method for gallium nitride base light-emitting device based on substrate desquamation
TW201025673A (en) * 2008-12-30 2010-07-01 Univ Nat Chunghsing The method to produce a light emitting device module

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
F.Rizzi etc.Selective wet etching of lattice-matched AlInN-GaN heterostructures.《Journal of Crystal Growth》.Elsevier,2007,第300卷(第1期), *

Also Published As

Publication number Publication date
CN102082214A (en) 2011-06-01

Similar Documents

Publication Publication Date Title
US9041005B2 (en) Solid state lighting devices with cellular arrays and associated methods of manufacturing
US8946865B2 (en) Gallium—nitride-on-handle substrate materials and devices and method of manufacture
JP4642137B2 (en) Method for manufacturing compound semiconductor device wafer
CN104011886B (en) Light emitting diode and its manufacture method
US6607931B2 (en) Method of producing an optically transparent substrate and method of producing a light-emitting semiconductor chip
CN101901858B (en) Vertical structure semiconductor devices
JP4177097B2 (en) Method of manufacturing a semiconductor chip emitting radiation based on III-V nitride semiconductor and semiconductor chip emitting radiation
JP5312797B2 (en) Method for producing optoelectronic substrate
CN101882571B (en) III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device
CN102106006B (en) Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same
CN100492610C (en) Method for production of semiconductor chips
US7033858B2 (en) Method for making Group III nitride devices and devices produced thereby
TWI377697B (en) Method for growing a nitride-based iii-v group compound semiconductor
CN101494267B (en) Preparation method for gallium nitride base light-emitting device based on substrate desquamation
JP6091530B2 (en) Manufacturing method of composite substrate used for GaN growth
Ha et al. The fabrication of vertical light-emitting diodes using chemical lift-off process
JP5556657B2 (en) Group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, and lamp
CN101604717B (en) Vertical GaN-based LED chip and manufacture method thereof
US8803189B2 (en) III-V compound semiconductor epitaxy using lateral overgrowth
EP1848026A1 (en) LED having vertical structure and method for fabricating the same
KR101151158B1 (en) Compound semiconductor light emitting element and manufacturing method for same, conductive translucent electrode for compound semiconductor light emitting element, lamp, electronic device, and mechanical apparatus
JP2005522875A (en) Fabrication method of longitudinal device using metal support film
JP4148846B2 (en) Light emitting diode device manufacturing method and light emitting diode device
US8507357B2 (en) Method for lift-off of light-emitting diode substrate
TWI469185B (en) Semiconductor structure for substrate separation and method for manufacturing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120926

Termination date: 20151129