CN102185075A - Light-emitting diode with bonding reflecting layer and manufacturing method thereof - Google Patents

Light-emitting diode with bonding reflecting layer and manufacturing method thereof Download PDF

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Publication number
CN102185075A
CN102185075A CN2011100891002A CN201110089100A CN102185075A CN 102185075 A CN102185075 A CN 102185075A CN 2011100891002 A CN2011100891002 A CN 2011100891002A CN 201110089100 A CN201110089100 A CN 201110089100A CN 102185075 A CN102185075 A CN 102185075A
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Prior art keywords
light
emitting diode
layer
reflector
evaporation
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肖志国
唐勇
武胜利
杨天鹏
阎小红
刘伟
王强
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Dalian Meiming Epitaxial Wafer Technology Co Ltd
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Dalian Meiming Epitaxial Wafer Technology Co Ltd
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Abstract

The invention discloses a light-emitting diode with a bonding reflecting layer and a manufacturing method thereof. A light-emitting diode lamination layer and a metal reflecting layer are bonded together by utilizing an ultrathin metal bonding layer to ensure that light shined to the metal reflecting layer can be guide out through reflection so as to improve the brightness of the light-emitting diode.

Description

A kind of light-emitting diode and manufacture method thereof with bonding reflector
Technical field
The present invention relates to a kind of luminescent device, particularly a kind of GaN based light-emitting diode and manufacture method thereof belong to technical field of semiconductor illumination.
Background technology
The application of light-emitting diode is rather extensive, for example, can be applicable to optical display, traffic sign, data memory device, communication device, lighting device and medical treatment device.How improving the brightness of light-emitting diode, is the important topic in the manufacturing of light-emitting diode.
The method that increases nitride light-emitting element brightness traditionally makes and can be taken out of by this oxidation reflector by the light in luminous lamination directive oxidation reflector for plate the oxidation reflector on transparency carrier.Yet the reflecting effect in this reflector is not to be comprehensively, only can reflect vertically to inject and the light of specific wavelength, and reflection efficiency is relatively poor, and in subsequent technique, oxidation reflector regular meeting peels off because of external force, makes reflection efficiency reduce greatly in addition.
In addition, be everlasting traditionally and plate metal level on the transparency carrier and reach function of reflecting, make and to take out of by this metallic reflector that its reflection efficiency is good than the oxidation reflector, but the active force between substrate and the metal is strong inadequately by the light of luminous lamination directive metallic reflector, the attached outstanding weak effect of metal, in order to promote its adhesive force, being everlasting adds between substrate and the metallic reflector that last layer is admired or chromium, to promote its tack, but admire or chromium meeting extinction, therefore whole reflectivity just reduces greatly.
The patent No. is that the patent of invention light-emitting diode and the manufacture method thereof of reflector " have bonding " of ZL 03101507.7 and application number are to have introduced the light-emitting diode with bonding reflector in 03156669.3 the application for a patent for invention " having the nitride light-emitting element of pasting the reflector ", but the bonding layer material that is to use for poly-phthalimide, benzocyclobutane or at least a material in one group of material being constituted of fluorine cyclobutane.Not only price is more expensive and complex manufacturing technology for above-mentioned material, needs vacuum breaker to carry out 2 times and even 3 evaporations in the process of making, and has reduced the yield of product.And the bonding layer material that uses in this patent is metal, and is not only with low cost, and manufacture craft is simple, can with reflector metal evaporation simultaneously, one time evaporation can be finished, and greatly reduces the cost of product, improve the yield of product, be applicable to large-scale production.
Summary of the invention
Main purpose of the present invention is to provide a kind of manufacture method of light-emitting diode, and in its technology, mat uses a thin tack coat and a reflector, make light penetrate this ultra-thin adhered layer, the directive reflector, wherein, ultra-thin adhesion layer can improve mechanical strength, and does not reduce the reflectivity in reflector.The light in this directive reflector can be taken out of by reflection, to improve the brightness of light-emitting component.
A kind of lumination of light emitting diode diode with bonding reflector, its structure is followed successively by: protective layer, second tack coat, reflector, first tack coat, substrate, N-GaN layer, active layer, P-GaN layer, transparency conducting layer, P electrode and N electrode; Described its material of first tack coat is selected from least a among In, Sn, AI, Au, Pt, Zn, Ge, Ag, Pb, Pd, Cu, AuBe, AuGe, Ni, Pbsn and the AuZn, and its thickness is
Figure BSA00000470586600021
Described conductive is selected from a kind of or its combination among Ni/Au, Ni/ITO, the ITO, and thickness exists Described reflector material is selected from least a among In, Sn, AI, Au, Pt, Zn, Ge, Ag, Pb, Pd, Cu, AuBe, AuGe, Ni, Pbsn and the AuZn, and thickness exists Described second bonding layer material is selected from least a among In, Sn, AI, Au, Pt, Zn, Ge, Ag, Pb, Pd, Cu, AuBe, AuGe, Ni, Pbsn and the AuZn, and thickness exists
Figure BSA00000470586600024
Described protective layer material is selected from least a among In, Sn, AI, Au, Pt, Zn, Ge, Ag, Pb, Pd, Cu, AuBe, AuGe, Ni, Pbsn and the AuZn, and thickness exists
Figure BSA00000470586600025
Wherein, the material of described first tack coat is preferably Ni or Pt; The thickness of described first tack coat is preferably
Figure BSA00000470586600026
The reflector is preferably Ag or Al, and thickness exists
Figure BSA00000470586600027
Between; Second tack coat is preferably Ni or Ti, and thickness exists Between; Protective layer is preferably Au or Pt, and thickness exists
Figure BSA00000470586600029
A kind of lumination of light emitting diode diode making process with bonding reflector, its step is as follows:
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposit transparent conductive layer on P type GaN based semiconductor;
Step 3: make P, N electrode by photoetching, etch process;
Step 4: by abrasive polishing process with reducing thin of sapphire substrate; The thickness of Sapphire Substrate is 100um～200um behind the attenuate;
Step 5: make first tack coat, reflector, second tack coat, protective layer successively at the reducing thin of sapphire substrate face by evaporation or sputtering technology; The first tack coat evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.1A/s, and evaporation power is 7W; Reflector evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2A/s, and evaporation power is 8W; The second tack coat evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.5A/s, and evaporation power is 9W; Protective layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2.5A/s, and evaporation power is 8W;
Step 6: after laser cutting splitting technology, promptly obtain the GaN based light-emitting diode;
Beneficial effect of the present invention:
Metallic film quality when the adhesiveness of metallic reflector depends primarily on the reflector and just begun to grow, the present invention has added one deck adhesion layer before metallic reflector, for having the ultra-thin metal level of good adhesion, not only can avoid because the shortcoming that the reflectivity that general adhesion layer causes descends, simultaneously can significantly improve the adhesiveness in reflector, can in follow-up technology, not come off; The protective layer at the back side, reflector also helps the aerial preservation in reflector, avoids producing problem such as peel off, and has improved the yield of producing.Can also continue the plated metal heat dissipating layer at the protective layer another side in addition,, improve the thermal stability of light-emitting diode to reach the effect of heat radiation.
Description of drawings
Fig. 1 is a schematic diagram: show as follows according to the Reference numeral in a kind of high brightness GaN based light-emitting diode accompanying drawing that the present invention implemented
101 protective layers, 108 active layers
102 second adhesion layer 109P-GaN based semiconductors
104 reflector, 110 transparency conducting layers
105 first adhesion layer 111P electrodes
106 substrate 112N electrodes
The 107N-GaN based semiconductor
Embodiment
The present invention is further described below in conjunction with drawings and Examples:
Embodiment 1
A kind of light-emitting diode comprises protective layer 101, second adhesion layer 102, reflector 104, first adhesion layer 105, substrate 106, N-GaN based semiconductor 107, active layer 108, P-GaN based semiconductor 109, transparency conducting layer 110, P electrode 111, N electrode 112.Wherein the material of protective layer is In, and thickness is
Figure BSA00000470586600031
The material of first adhesion layer is Ni, and thickness is
Figure BSA00000470586600033
The material of second adhesion layer is Sn, and thickness is
Figure BSA00000470586600034
Figure BSA00000470586600035
The material in reflector is Al, and thickness is
Figure BSA00000470586600036
Its manufacture method is:
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposit transparent conductive layer on P type GaN based semiconductor;
Step 3: make P, N electrode by photoetching, etch process;
Step 4: by abrasive polishing process with reducing thin of sapphire substrate;
Step 5: make first adhesion layer, reflector, second adhesion layer, protective layer successively at the reducing thin of sapphire substrate face by evaporation or sputtering technology; Wherein the first adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.1A/s, and evaporation power is 7W; Reflector evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2A/s, and evaporation power is 8W; The second adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.5A/s, and evaporation power is 9W; Protective layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2.5A/s, and evaporation power is 8W;
Step 6: after laser cutting splitting technology, promptly obtain the GaN based light-emitting diode;
Embodiment 2
A kind of light-emitting diode comprises protective layer 101, second adhesion layer 102, reflector 104, first adhesion layer 105, substrate 106, N-GaN based semiconductor 107, active layer 108, P-GaN based semiconductor 109, transparency conducting layer 110, P electrode 111, N electrode 112.Wherein the material of protective layer is Sn, and thickness is
Figure BSA00000470586600041
Figure BSA00000470586600042
The material of first adhesion layer is Pt, and thickness is
Figure BSA00000470586600043
The material of second adhesion layer is Pb, and thickness is
Figure BSA00000470586600044
Figure BSA00000470586600045
The material in reflector is Ag, and thickness is
Its manufacture method is:
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposit transparent conductive layer on P type GaN based semiconductor;
Step 3: make P, N electrode by photoetching, etch process;
Step 4: by abrasive polishing process with reducing thin of sapphire substrate;
Step 5: make first adhesion layer, reflector, second adhesion layer, protective layer successively at the reducing thin of sapphire substrate face by evaporation or sputtering technology; Wherein the first adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.1A/s, and evaporation power is 7W; Reflector evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2A/s, and evaporation power is 8W; The second adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.5A/s, and evaporation power is 9W; Protective layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2.5A/s, and evaporation power is 8W;
Step 6: after laser cutting splitting technology, promptly obtain the GaN based light-emitting diode;
Embodiment 3
A kind of light-emitting diode comprises protective layer 101, second adhesion layer 102, reflector 104, first adhesion layer 105, substrate 106, N-GaN based semiconductor 107, active layer 108, P-GaN based semiconductor 109, transparency conducting layer 110, P electrode 111, N electrode 112.Wherein the material of protective layer is In, Au alloy, and gross thickness is
Figure BSA00000470586600051
The material of first adhesion layer is AuBe, and thickness is
Figure BSA00000470586600052
The material of second adhesion layer is Ni, and thickness is
Figure BSA00000470586600053
The material in reflector is Pt, and thickness is
Figure BSA00000470586600054
Its manufacture method is:
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposit transparent conductive layer on P type GaN based semiconductor;
Step 3: make P, N electrode by photoetching, etch process;
Step 4: by abrasive polishing process with reducing thin of sapphire substrate;
Step 5: make first adhesion layer, reflector, second adhesion layer, protective layer successively at the reducing thin of sapphire substrate face by evaporation or sputtering technology; Wherein the first adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.1A/s, and evaporation power is 7W; Reflector evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2A/s, and evaporation power is 8W; The second adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.5A/s, and evaporation power is 9W; Protective layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2.5A/s, and evaporation power is 8W;
Step 6: after laser cutting splitting technology, promptly obtain the GaN based light-emitting diode;
Embodiment 4
A kind of light-emitting diode comprises protective layer 101, second adhesion layer 102, reflector 104, first adhesion layer 105, substrate 106, N-GaN based semiconductor 107, active layer 108, P-GaN based semiconductor 109, transparency conducting layer 110, P electrode 111, N electrode 112.Wherein the material of protective layer is AuZn, and thickness is
Figure BSA00000470586600055
The material of first adhesion layer is Ag, and thickness is
Figure BSA00000470586600056
The material of second adhesion layer is Sn, and thickness is
Figure BSA00000470586600057
The material in reflector is Pt, and thickness is
Figure BSA00000470586600058
Its manufacture method is:
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposit transparent conductive layer on P type GaN based semiconductor;
Step 3: make P, N electrode by photoetching, etch process;
Step 4: by abrasive polishing process with reducing thin of sapphire substrate;
Step 5: make first adhesion layer, reflector, second adhesion layer, protective layer successively at the reducing thin of sapphire substrate face by evaporation or sputtering technology; Wherein the first adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.1A/s, and evaporation power is 7W; Reflector evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2A/s, and evaporation power is 8W; The second adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.5A/s, and evaporation power is 9W; Protective layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2.5A/s, and evaporation power is 8W;
Step 6: after laser cutting splitting technology, promptly obtain the GaN based light-emitting diode;
Embodiment 5
A kind of light-emitting diode comprises protective layer 101, second adhesion layer 102, reflector 104, first adhesion layer 105, substrate 106, N-GaN based semiconductor 107, active layer 108, P-GaN based semiconductor 109, transparency conducting layer 110, P electrode 111, N electrode 112.Wherein the material of protective layer is Au, and thickness is
Figure BSA00000470586600061
Figure BSA00000470586600062
The material of first adhesion layer is Ni, and thickness is The material of second adhesion layer is Ni, and thickness is
Figure BSA00000470586600064
The material in reflector is Ag, and thickness is
Its manufacture method is:
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposit transparent conductive layer on P type GaN based semiconductor;
Step 3: make P, N electrode by photoetching, etch process;
Step 4: by abrasive polishing process with reducing thin of sapphire substrate;
Step 5: make first adhesion layer, reflector, second adhesion layer, protective layer successively at the reducing thin of sapphire substrate face by evaporation or sputtering technology; Wherein the first adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.1A/s, and evaporation power is 7W; Reflector evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2A/s, and evaporation power is 8W; The second adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.5A/s, and evaporation power is 9W; Protective layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2.5A/s, and evaporation power is 8W;
Step 6: after laser cutting splitting technology, promptly obtain the GaN based light-emitting diode;
Embodiment 6
A kind of light-emitting diode comprises protective layer 101, second adhesion layer 102, reflector 104, first adhesion layer 105, substrate 106, N-GaN based semiconductor 107, active layer 108, P-GaN based semiconductor 109, transparency conducting layer 110, P electrode 111, N electrode 112.Wherein the material of protective layer is In, and thickness is
Figure BSA00000470586600071
Figure BSA00000470586600072
The material of first adhesion layer is AuZn, and thickness is
Figure BSA00000470586600073
The material of second adhesion layer is Sn, and thickness is
Figure BSA00000470586600074
The material in reflector is AuGe, and thickness is
Figure BSA00000470586600075
Its manufacture method is:
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposit transparent conductive layer on P type GaN based semiconductor;
Step 3: make P, N electrode by photoetching, etch process;
Step 4: by abrasive polishing process with reducing thin of sapphire substrate;
Step 5: make first adhesion layer, reflector, second adhesion layer, protective layer successively at the reducing thin of sapphire substrate face by evaporation or sputtering technology; Wherein the first adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.1A/s, and evaporation power is 7W; Reflector evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2A/s, and evaporation power is 8W; The second adhesion layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 0.5A/s, and evaporation power is 9W; Protective layer evaporation condition is: vacuum degree requires 2 * 10 -6More than the torr, evaporation rate is at 2.5A/s, and evaporation power is 8W;
Step 6: after laser cutting splitting technology, promptly obtain the GaN based light-emitting diode;
Though light-emitting diode of the present invention is open with example, scope of the present invention is not limited to described example, should be as the criterion so that described claim is determined.Therefore those skilled in the art can do appropriate change under the situation that does not break away from claim of the present invention and common practise.

Claims (9)

  1. One kind have the bonding reflector light-emitting diode, its structure is: protective layer, second tack coat, reflector, substrate, N-GaN layer, active layer, P-GaN layer, transparency conducting layer, P electrode and N electrode; It is characterized in that also having first tack coat, its material to be selected from least a among In, Sn, AI, Au, Pt, Zn, Ge, Ag, Pb, Pd, Cu, AuBe, AuGe, Ni, Pbsn and the AuZn between reflector and substrate, its thickness is
    Figure FSA00000470586500011
  2. 2. light-emitting diode as claimed in claim 1 is characterized in that, the material of described first tack coat is Ni or Pt.
  3. 3. light-emitting diode as claimed in claim 1 is characterized in that the thickness of described first tack coat is
    Figure FSA00000470586500013
  4. 4. light-emitting diode as claimed in claim 1 is characterized in that conductive is selected from a kind of or its combination among Ni/Au, Ni/ITO, the ITO.
  5. 5. light-emitting diode as claimed in claim 1 is characterized in that reflector material is selected from least a among In, Sn, AI, Au, Pt, Zn, Ge, Ag, Pb, Pd, Cu, AuBe, AuGe, Ni, Pbsn and the AuZn, and thickness is
    Figure FSA00000470586500014
  6. 6. light-emitting diode as claimed in claim 1 is characterized in that second bonding layer material is selected from least a among In, Sn, AI, Au, Pt, Zn, Ge, Ag, Pb, Pd, Cu, AuBe, AuGe, Ni, Pbsn and the AuZn, and thickness is
    Figure FSA00000470586500015
  7. 7. light-emitting diode as claimed in claim 1 is characterized in that protective layer material is selected from least a among In, Sn, AI, Au, Pt, Zn, Ge, Ag, Pb, Pd, Cu, AuBe, AuGe, Ni, Pbsn and the AuZn, and thickness is
    Figure FSA00000470586500016
  8. 8. as any described manufacturing method for LED of claim 1-7, its step is as follows:
    Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
    Step 2: deposit transparent conductive layer on P type GaN based semiconductor;
    Step 3: make P, N electrode by photoetching, etch process;
    Step 4: by abrasive polishing process with reducing thin of sapphire substrate;
    Step 5: make first tack coat, reflector, second tack coat, protective layer successively at the reducing thin of sapphire substrate face by evaporation or sputtering technology;
    Step 6: after laser cutting splitting technology, promptly obtain the GaN based light-emitting diode;
    It is characterized in that the first tack coat evaporation condition is in the step 5: vacuum degree is at least 2 * 10 -6Holder, evaporation rate is
    Figure FSA00000470586500017
    Evaporation power is 7W.
  9. 9. manufacturing method for LED as claimed in claim 8 is characterized in that the thickness behind the reducing thin of sapphire substrate is 100um～200um in the step 4.
CN2011100891002A 2011-04-07 2011-04-07 Light-emitting diode with bonding reflecting layer and manufacturing method thereof Pending CN102185075A (en)

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Cited By (9)

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Publication number Priority date Publication date Assignee Title
CN102610728A (en) * 2012-03-21 2012-07-25 厦门市三安光电科技有限公司 Light-emitting diode (LED) with back silver-plated reflecting layer and manufacturing method of LED
CN103022311A (en) * 2011-09-27 2013-04-03 大连美明外延片科技有限公司 GaN-LED (Light-Emitting Diode) chip structure and preparation method thereof
WO2013139251A1 (en) * 2012-03-21 2013-09-26 厦门市三安光电科技有限公司 Light-emitting diode with reflector and manufacturing method therefor
CN103746047A (en) * 2013-12-13 2014-04-23 华灿光电(苏州）有限公司 A light emitting diode manufacturing method and a light emitting diode produced by adopting the method
CN104810460A (en) * 2015-03-31 2015-07-29 长治市华光光电科技集团有限公司 Back multilayer reflecting metal layer for increasing brightness of blue light chip and preparation method of metal layer
CN105390587A (en) * 2015-10-27 2016-03-09 天津三安光电有限公司 Method for carrying out metal bonding on LED lighting emitting component
CN105990489A (en) * 2014-09-12 2016-10-05 株式会社东芝 Light emitting device and manufacturing method thereof
CN110350061A (en) * 2019-07-10 2019-10-18 佛山市国星半导体技术有限公司 A kind of LED chip, packaging and packaging method exempted from packaging plastic
CN114005926A (en) * 2021-10-29 2022-02-01 淮安澳洋顺昌光电技术有限公司 Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103022311A (en) * 2011-09-27 2013-04-03 大连美明外延片科技有限公司 GaN-LED (Light-Emitting Diode) chip structure and preparation method thereof
CN102610728A (en) * 2012-03-21 2012-07-25 厦门市三安光电科技有限公司 Light-emitting diode (LED) with back silver-plated reflecting layer and manufacturing method of LED
WO2013139251A1 (en) * 2012-03-21 2013-09-26 厦门市三安光电科技有限公司 Light-emitting diode with reflector and manufacturing method therefor
CN102610728B (en) * 2012-03-21 2014-10-29 厦门市三安光电科技有限公司 Light-emitting diode (LED) with back silver-plated reflecting layer and manufacturing method of LED
CN103746047A (en) * 2013-12-13 2014-04-23 华灿光电(苏州）有限公司 A light emitting diode manufacturing method and a light emitting diode produced by adopting the method
CN103746047B (en) * 2013-12-13 2016-08-03 华灿光电(苏州）有限公司 The light emitting diode that a kind of method for manufacturing light-emitting and employing the method prepare
CN105990489A (en) * 2014-09-12 2016-10-05 株式会社东芝 Light emitting device and manufacturing method thereof
CN104810460A (en) * 2015-03-31 2015-07-29 长治市华光光电科技集团有限公司 Back multilayer reflecting metal layer for increasing brightness of blue light chip and preparation method of metal layer
CN105390587A (en) * 2015-10-27 2016-03-09 天津三安光电有限公司 Method for carrying out metal bonding on LED lighting emitting component
CN110350061A (en) * 2019-07-10 2019-10-18 佛山市国星半导体技术有限公司 A kind of LED chip, packaging and packaging method exempted from packaging plastic
CN114005926A (en) * 2021-10-29 2022-02-01 淮安澳洋顺昌光电技术有限公司 Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof
CN114005926B (en) * 2021-10-29 2024-02-27 淮安澳洋顺昌光电技术有限公司 Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof

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Application publication date: 20110914