CN103022311A - GaN-LED (Light-Emitting Diode) chip structure and preparation method thereof - Google Patents
GaN-LED (Light-Emitting Diode) chip structure and preparation method thereof Download PDFInfo
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- CN103022311A CN103022311A CN201110290772XA CN201110290772A CN103022311A CN 103022311 A CN103022311 A CN 103022311A CN 201110290772X A CN201110290772X A CN 201110290772XA CN 201110290772 A CN201110290772 A CN 201110290772A CN 103022311 A CN103022311 A CN 103022311A
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Abstract
The invention discloses a GaN-LED (Light-Emitting Diode) chip structure and a preparation method thereof. A reflection layer is formed between a substrate and an epitaxial layer, and cylindrical graphs periodically distributed are arranged on the reflection layer. According to the GaN-LED chip prepared by the invention, the problems of crystal quality and luminous efficiency can be solved simultaneously, and the luminous efficiency of the LED chip can be improved by about 10-20%.
Description
Technical field
The present invention relates to the light emitting semiconductor device field, relate in particular to chip structure of a kind of GaN-LED of raising luminosity and preparation method thereof.
Background technology
LED has the incomparable advantages of traditional lighting light source such as low consumption, energy-saving and environmental protection, long service life as the lighting source of a new generation.But LED replaces other light sources and still has many problems at present, such as: brightness is low, high in cost of production.Large power white light LED causes that gradually industry is to the attention of great power LED owing to having the possibility of replace incandescent and fluorescent lamp.The efficient of white light LEDs has has met or exceeded the efficient of conventional fluorescent lamps at present, but its expensive inferior position makes it also have certain difficulty universal, and the lifting of efficient also has very large development space.
The approach that improves LED efficient mainly contains and improves internal quantum efficiency and increase light extraction efficiency.
As being used at present the grow sapphire of the most frequently used substrate of GaN, so that its manufacturing technology is ripe, cost is low, chemical stability good, do not absorb the advantage such as visible light, having realized rapidly industrialization and become present main flow trend.But sapphire still exists significant deficiency, is that the Lattice Matching degree is low, causes Interfacial Dislocations density high, has had a strong impact on the internal quantum efficiency of LED.Patterned substrate (PSS) method is in the mode of dry etching, design and produce out micron order or nano level pattern with ad hoc rules of micro-structural in Sapphire Substrate, make the GaN material become horizontal extension by vertical extension, thereby effectively reduce the defect concentration of GaN epitaxial material, the non-radiation type that reduces active area is compound.In addition, the PSS method has strengthened the scattering of light at GaN and Sapphire Substrate interface, thereby has increased the probability of light from the chip internal outgoing.Like this, the PSS method is the effective ways that improve Sapphire Substrate LED so that the internal quantum efficiency of Sapphire Substrate LED and light extraction efficiency all promote to some extent.Studies show that, compare with general Sapphire Substrate LED, the PSS method can improve brightness about 70%.All introduce the preparation method of patterned substrate in the application such as patent ZL200910048634.3 and publication number 101515625, improved crystal mass and the internal quantum efficiency of device by this technology.
Another method that improves light extraction efficiency is to realize by speculum or reflector, by at Sapphire Substrate increase speculum or reflector downward light is reflected away substantially from the front.As adopting the speculum for preparing composite construction at substrate back in the patent application of publication number 102082216, composite construction comprises dielectric layer and metal level; Publication number is that the patent of CN 1858918 relates at the Grown all-angle reflector, forms at least 10 layers by high low-index layer alternative arrangement.In addition, by increasing the problem that metallic mirror can solve the sapphire weak heat-dissipating well at substrate.
In order to solve simultaneously the problem of crystal mass and light extraction efficiency, some have appearred with speculum and the invention that graphically combines, increase metallic dielectric layer and reflector as adopting at substrate in the patent application of publication number CN1645637, and etch micropore at metallic dielectric layer, spill loss and total reflection is lost with minimizing.The present invention proposes a kind of new GaN-LED chip structure and preparation method thereof.Reflector on substrate forms, and form the graphic structure of period profile on surface, upper reflector.Reduce the layer of metal layer than last method, and increased adhesion layer, combined the advantage of patterned substrate and speculum, simplified preparation technology, improved simultaneously the luminous efficiency of chip.
Summary of the invention
The object of the present invention is to provide a kind of GaN-LED chip structure, this led chip structure can solve the problem of crystal mass and light extraction efficiency simultaneously, improves luminosity; The present invention also provides the preparation method of this kind chip structure.
A kind of GaN-LED chip structure disclosed by the invention; comprise successively protective layer, lower reflector, the 3rd adhesion layer, substrate, the first adhesion layer, upper reflector, the second adhesion layer, resilient coating, N-type GaN layer and N-type electrode, Multiple Quantum Well, P type GaN layer and P type electrode from bottom to top; it is characterized in that the surface, reflector is cylindric figure of cycle; body diameter is 1 micron to 2.5 microns; distance between two cylinders is 0.5 micron to 1.5 microns, and the height of cylinder is 1 micron to 2 microns.
The material in described upper reflector is Ag, Al or Au, and thickness is 2 microns to 6 microns.
The material of described the first adhesion layer and the 3rd adhesion layer is Ni, Cr or Ti, and thickness is 0.001 micron to 0.005 micron.
The material of described the second adhesion layer is Ni, Cr or Ti, and thickness is 0.001 micron to 0.01 micron.
The material in described lower reflector is Ag, Al or Au, and thickness is 1 micron to 3 microns.A kind of preparation method of GaN-LED chip structure comprises the steps:
1) selects sapphire as substrate, utilize coating machine successively evaporation the first adhesion layer and upper reflector;
2) utilize photoetching and ICP lithographic method that cycle graph is transferred on the upper reflector; ICP power is 2200W, and RF power is 50W, and chamber pressure is 100mTorr;
3) utilize coating machine evaporation the second adhesion layer;
4) adopt mocvd method grown buffer layer, N-type GaN layer, multiple quantum well layer and P type GaN layer;
5) etch electrode pattern, the electrode evaporation material forms N, P electrode;
6) utilize coating machine at the back side of substrate successively evaporation the 3rd adhesion layer, lower reflector and protective layer;
7) utilize laser cutting machine to cut from the back side of substrate, obtain single chip.
The evaporation in each adhesion layer and reflector adopts the method for electron gun evaporation deposition plating to realize, vacuum degree is 2 * 10 during the coating machine evaporation
-6Torr or lower, the evaporation speed of adhesion layer is controlled at
Arrive
The evaporation speed in reflector is controlled at
Arrive
The present invention is the reflector on evaporation one deck on the substrate, and has carried out graphical treatment, can improve about the luminous efficiency 10%-20% of led chip, luminosity that can the present great power LED of Effective Raise; In addition, structure preparation technology of the present invention is simple, can be widely used in the production of all kinds of luminescence chips.
Description of drawings
Fig. 1 is GaN-LED chip structure schematic diagram of the present invention
Fig. 2 is upper reflector patterned structures vertical view
Fig. 3 is the upper reflector patterned structures end view to lower recess
Fig. 4 is the upper reflector patterned structures end view that raises up
Wherein: 1--substrate, 2--the first adhesion layer, the upper reflector of 3--, 4--the second adhesion layer, 5--buffering
Layer, 6--N type GaN layer, the 7--multiple quantum well layer, 8--P type GaN layer, 9--the 3rd is sticking
Attached layer, reflector under the 10--, 11--protective layer, 12--N type electrode, 13--P type electrode
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.
Embodiment 1:
GaN-LED chip structure as shown in Figure 1, be followed successively by from bottom to top above the Sapphire Substrate the first adhesion layer, on reflector, the second adhesion layer, resilient coating, N-type GaN layer and N-type electrode, multiple quantum well layer, P type GaN layer and P type electrode.Wherein, upper reflector is the Ag of 2 micron thick, through graphical treatment, and the figure cylinder to lower recess as shown in Figures 2 and 3, diameter is 1 micron, and the distance between two cylinders is 0.5 micron, and the height of cylinder is 1 micron; The material of the first adhesion layer is Ni, and thickness is 0.001 micron; The material of the second adhesion layer is Ni, and thickness is 0.01 micron; The material of the 3rd adhesion layer is Ni, and thickness is 0.001 micron; The material in lower reflector is Ag, and thickness is 1 micron; Protective layer material is Au, and thickness is 0.01 micron.
Following steps are adopted in the preparation of this GaN-LED chip:
1) select sapphire as substrate, the mode of employing electron gun evaporation deposition plating successively evaporation thickness is 0.001 micron Ni, the Ag that thickness is 2 microns, and vacuum degree reaches 2 * 10
-6Begin evaporation during Torr, evaporation speed is controlled at respectively
With
2) utilize mask aligner and ICP to carry out the reflector etching, litho pattern shown in Figure 2 is transferred on the upper reflector.ICP power is 2200W, and RF power is 50W, and chamber pressure is 100mTorr, etching gas Cl
2, BCl
3Flow-rate ratio is 8: 1, and temperature is controlled at 15 ℃;
3) the mode evaporation thickness of employing electron gun evaporation deposition plating is 0.01 micron Ni, and vacuum degree reaches 2 * 10
-6Begin evaporation during Torr, evaporation speed is controlled at
4) adopt mocvd method, successively grown buffer layer, N-type GaN layer, multiple quantum well layer and P type GaN layer.
5) etch electrode pattern, the electrode evaporation material forms N, P electrode;
6) utilize coating machine at the back side of substrate respectively evaporation thickness be that 0.001 micron Ni, thickness is that 1 micron Ag and thickness are 0.01 micron Au.
7) utilize laser cutting machine to cut from the back side of substrate, obtain single chip.
Embodiment 2:
GaN-LED chip structure as shown in Figure 1, be followed successively by from bottom to top above the Sapphire Substrate the first adhesion layer, on reflector, the second adhesion layer, resilient coating, N-type GaN layer and N-type electrode, multiple quantum well layer, P type GaN layer and P type electrode.Wherein, upper reflector is the Al of 3 micron thick, process through PSS, and PSS figure such as Fig. 2 and the cylinder that raises up shown in Figure 4, diameter is 2 microns, and the distance between two cylinders is 1 micron, and the height of cylinder is 1 micron; The material of the first adhesion layer is Cr, and thickness is 0.002 micron; The material of the second adhesion layer is Cr, and thickness is 0.005 micron; The material of the 3rd adhesion layer is Cr, and thickness is 0.003 micron; The material in lower reflector is Al, and thickness is 2 microns; Protective layer material is Au, and thickness is 0.01 micron.
Following steps are adopted in the preparation of this GaN-LED chip:
1) select sapphire as substrate, the mode of employing electron gun evaporation deposition plating successively evaporation thickness is 0.002 micron Cr, the Al that thickness is 3 microns, and vacuum degree reaches 2 * 10
-6Begin evaporation during Torr, evaporation speed is controlled at respectively
With
2) utilize mask aligner and ICP to carry out the reflector etching, litho pattern shown in Figure 2 is transferred on the upper reflector.ICP power is 2200W, and RF power is 50W, and chamber pressure is 100mTorr, etching gas Cl
2, BCl
3Flow-rate ratio is 8: 1, and temperature is controlled at 15 ℃;
3) the mode evaporation thickness of employing electron gun evaporation deposition plating is 0.005 micron Cr, and vacuum degree reaches 2 * 10
-6Begin evaporation during Torr, evaporation speed is controlled at
4) adopt mocvd method, successively grown buffer layer, N-type GaN layer, multiple quantum well layer and P type GaN layer.
5) etch electrode pattern, the electrode evaporation material forms N, P electrode;
6) utilize coating machine at the back side of substrate respectively evaporation thickness be that 0.003 micron Cr, thickness is that 2 microns Al and thickness are 0.01 micron Au.
7) utilize laser cutting machine to cut from the back side of substrate, obtain single chip.
Embodiment 3:
GaN-LED chip structure as shown in Figure 1, be followed successively by from bottom to top above the Sapphire Substrate the first adhesion layer, on reflector, the second adhesion layer, resilient coating, N-type GaN layer and N-type electrode, multiple quantum well layer, P type GaN layer and P type electrode.Wherein, upper reflector is the Au of 6 micron thick, process through PSS, and PSS figure such as Fig. 2 and the cylinder that raises up shown in Figure 4, diameter is 1 micron, and the distance between two cylinders is 0.5 micron, and the height of cylinder is 1.5 microns; The material of the first adhesion layer is Ti, and thickness is 0.005 micron; The material of the second adhesion layer is Ti, and thickness is 0.001 micron; The material of the 3rd adhesion layer is Ti, and thickness is 0.005 micron; The material in lower reflector is Ag, and thickness is 3 microns; Protective layer material is Au, and thickness is 0.01 micron.
Following steps are adopted in the preparation of this GaN-LED chip:
1) select sapphire as substrate, the mode of employing electron gun evaporation deposition plating successively evaporation thickness is 0.005 micron Ti, the Au that thickness is 6 microns, and vacuum degree reaches 2 * 10
-6Begin evaporation during Torr, evaporation speed is controlled at respectively
With
2) utilize mask aligner and ICP to carry out the reflector etching, litho pattern shown in Figure 2 is transferred on the upper reflector.ICP power is 2200W, and RF power is 50W, and chamber pressure is 100mTorr, etching gas Cl
2, BCl
3Flow-rate ratio is 10: 1, and temperature is controlled at 15 ℃;
3) the mode evaporation thickness of employing electron gun evaporation deposition plating is 0.001 micron Ti, and vacuum degree reaches 2 * 10
-6Begin evaporation during Torr, evaporation speed is controlled at
4) adopt mocvd method, successively grown buffer layer, N-type GaN layer, multiple quantum well layer and P type GaN layer.
5) etch electrode pattern, the electrode evaporation material forms N, P electrode;
6) utilize coating machine at the back side of substrate respectively evaporation thickness be that 0.005 micron Ti, thickness is that 3 microns Ag and thickness are 0.01 micron Au.
7) utilize laser cutting machine to cut from the back side of substrate, obtain single chip.
Claims (6)
1. GaN-LED chip structure; comprise successively protective layer, lower reflector, the 3rd adhesion layer, substrate, the first adhesion layer, upper reflector, the second adhesion layer, resilient coating, N-type GaN layer and N-type electrode, Multiple Quantum Well, P type GaN layer and P type electrode from bottom to top; it is characterized in that the surface, reflector is cylindric figure of cycle; body diameter is 1 micron to 2.5 microns; distance between two cylinders is 0.5 micron to 1.5 microns, and the height of cylinder is 1 micron to 2 microns.
2. a kind of GaN-LED chip structure as claimed in claim 1, the material that it is characterized in that the reflector is Ag, Al or Au, thickness is 2 microns to 6 microns.
3. a kind of GaN-LED chip structure as claimed in claim 1, the material that it is characterized in that the first adhesion layer and the 3rd adhesion layer is Ni, Cr or Ti, thickness is 0.001 micron to 0.005 micron.
4. a kind of GaN-LED chip structure as claimed in claim 1, the material that it is characterized in that the second adhesion layer is Ni, Cr or Ti, thickness is 0.001 micron to 0.01 micron.
5. a kind of GaN-LED chip structure as claimed in claim 1, the material that it is characterized in that lower reflector is Ag, Al or Au, thickness is 1 micron to 3 microns.
6. a kind of preparation method of GaN-LED chip structure comprises the steps: as claimed in claim 1
1) selects sapphire as substrate, utilize coating machine successively evaporation the first adhesion layer and upper reflector;
2) utilize photoetching and ICP lithographic method that cycle graph is transferred on the upper reflector; ICP power is 2200W, and RF power is 50W, and chamber pressure is 100mTorr;
3) utilize coating machine evaporation the second adhesion layer;
4) adopt mocvd method grown buffer layer, N-type GaN layer, multiple quantum well layer and P type GaN layer;
5) etch electrode pattern, the electrode evaporation material forms N, P electrode;
6) utilize coating machine at the back side of substrate successively evaporation the 3rd adhesion layer, lower reflector and protective layer; Utilize laser cutting machine to cut from the back side of substrate, obtain single chip.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109742212A (en) * | 2018-12-21 | 2019-05-10 | 华中科技大学鄂州工业技术研究院 | A kind of LED encapsulation structure and packaging method |
| WO2020155532A1 (en) * | 2019-02-03 | 2020-08-06 | 泉州三安半导体科技有限公司 | Light emitting device |
| WO2020155530A1 (en) * | 2019-02-03 | 2020-08-06 | 泉州三安半导体科技有限公司 | Light-emitting device |
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| WO2010113593A1 (en) * | 2009-03-31 | 2010-10-07 | 富士フイルム株式会社 | Light emitting element |
| CN102163653A (en) * | 2010-02-23 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, method of manufacturing light emitting device, and lighting system |
| CN102185075A (en) * | 2011-04-07 | 2011-09-14 | 大连美明外延片科技有限公司 | Light-emitting diode with bonding reflecting layer and manufacturing method thereof |
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Patent Citations (5)
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| US20050145872A1 (en) * | 2003-12-24 | 2005-07-07 | Chao-Yi Fang | High performance nitride-based light-emitting diodes |
| JP2008108757A (en) * | 2006-10-23 | 2008-05-08 | Matsushita Electric Works Ltd | Compound semiconductor light-emitting element, illumination apparatus employing the same and manufacturing method of compound semiconductor element |
| WO2010113593A1 (en) * | 2009-03-31 | 2010-10-07 | 富士フイルム株式会社 | Light emitting element |
| CN102163653A (en) * | 2010-02-23 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, method of manufacturing light emitting device, and lighting system |
| CN102185075A (en) * | 2011-04-07 | 2011-09-14 | 大连美明外延片科技有限公司 | Light-emitting diode with bonding reflecting layer and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109742212A (en) * | 2018-12-21 | 2019-05-10 | 华中科技大学鄂州工业技术研究院 | A kind of LED encapsulation structure and packaging method |
| WO2020155532A1 (en) * | 2019-02-03 | 2020-08-06 | 泉州三安半导体科技有限公司 | Light emitting device |
| WO2020155530A1 (en) * | 2019-02-03 | 2020-08-06 | 泉州三安半导体科技有限公司 | Light-emitting device |
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Application publication date: 20130403 |