CN101604718A - A kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN101604718A CN101604718A CNA2009100629737A CN200910062973A CN101604718A CN 101604718 A CN101604718 A CN 101604718A CN A2009100629737 A CNA2009100629737 A CN A2009100629737A CN 200910062973 A CN200910062973 A CN 200910062973A CN 101604718 A CN101604718 A CN 101604718A
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Abstract
The invention provides a kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof, the side of this chip epitaxial loayer has certain angle of inclination, can improve the light extraction efficiency of light-emitting diode chip for backlight unit; The preparation method is at first at the substrate growing epitaxial layers, and wherein epitaxial loayer comprises resilient coating, N type layer, multiple quantum well layer and P type layer; Etch N type layer region, plate transparency conducting layer, and, on entire chip, prepare passivation layer at N, P zone difference evaporation metal electrode in the p type island region territory; By the protection of passivation layer, extension is carried out etching, control forms the etching side that certain angle tilts to the both sides speed of etching; Chip is carried out attenuate, scribing, sliver, test and sorting.Technology of the present invention is simple, and cost is lower; Simultaneously, among the present invention the processing of epitaxial loayer is helped to reduce stress in the chip, reduce the flexural deformation of chip in the course of processing, help improving attenuate, scribing and sliver effect.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit of distinctive appearance structure, relate to a kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof specifically.
Background technology
To be that a kind of energy is high efficiency be converted into the luminescent device of luminous energy with electric energy to light-emitting diode, is the most promising at present light source of new generation.The light-emitting diode general using is luminous by the intrinsic transition of direct gap semiconductor, has very high photoelectric conversion efficiency, promptly very high interior quantum effect.But these semi-conductive refractive indexes are generally 2～3.5.Relatively and the refractive index of air be approximately 1, light has only the very little optical range that goes out the directive air time from these semiconductors, the bright dipping of other angle is all returned by total reflection, sees accompanying drawing one.Light is propagated some energy of meeting loss in semiconductor, energy finally is converted to heat.The contour structures of tradition light-emitting diode is that upper surface is parallel with light emitting functional layer with the bottom surface, and the side is vertical with light emitting functional layer, sees accompanying drawing two.Under such contour structures, light can not be refracted to the external world through repeatedly total reflection in device, run out of energy at last.The light extraction efficiency of light-emitting diode is very low like this.Light extraction efficiency is low, then there is the light that can not penetrate in a large number, its energy is at the device internal loss, the Conversion of energy of loss is a heat, the accumulation in light-emitting diode chip for backlight unit of a large amount of heats can make the temperature of chip raise, quantum effect in reducing produces thermal stress in chip, problem that speed-up chip and encapsulating structure are aging or the like.Utilizing inclined side to improve in the technology of light extraction efficiency, the chip of the inverted pyramid shape that the foremost CREE of being company adopts in red yellow light LED, laterally inclined by whole epitaxial loayer and substrate promoted light extraction efficiency.But this scheme needing will realize utmost point strict process condition, and production cost is high.
Summary of the invention
Purpose of the present invention is exactly low at existing light-emitting diode chip for backlight unit light extraction efficiency, and improve the other problems that causes thus, a kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof is provided, the light-emitting diode of the face that tilts with light emitting functional layer is made in the side (promptly not parallel with light emitting functional layer face) of light-emitting diode, can improve the light extraction efficiency of light-emitting diode chip for backlight unit.The present invention can reach the purpose that improves light extraction efficiency with cheap relatively cost, and technology of the present invention is also to improving die stress simultaneously, and it is beneficial to improve attenuate, scribing, sliver effect.
Technical scheme of the present invention is: a kind of laterally inclined light-emitting diode chip for backlight unit comprises substrate and is laminated in epitaxial loayer on the substrate that this epitaxial loayer comprises resilient coating, N type layer, multiple quantum well layer and P type layer successively; Be coated with transparency conducting layer on the P type layer, P type layer is provided with the P electrode, and N type layer is provided with the N electrode; The superficial growth of chip surface except that P, N electrode has passivation layer; It is characterized in that: the side of its epitaxial loayer is the inclined plane.
Aforesaid laterally inclined light-emitting diode chip for backlight unit is characterized in that: the laterally inclined angle of epitaxial loayer is greater than 0 °, and is less than or equal to 70 °.
Aforesaid laterally inclined light-emitting diode chip for backlight unit is characterized in that: the component of epitaxial loayer is gallium nitride, zinc oxide or carborundum.
Aforesaid laterally inclined light-emitting diode chip for backlight unit is characterized in that: the size outward appearance of chip is arbitrarily, is rectangle, square, circle or irregular polygon to its top plan view structure.
A kind of preparation method of laterally inclined light-emitting diode chip for backlight unit, at first at the substrate growing epitaxial layers, wherein epitaxial loayer comprises resilient coating, N type layer, multiple quantum well layer and P type layer; Etch N type layer region, plate transparency conducting layer, and, on entire chip, prepare passivation layer at N, P zone difference evaporation metal N, P electrode in the p type island region territory; It is characterized in that: by the protection of passivation layer, extension is carried out etching, control forms the etching side of inclination to the both sides speed of etching; Chip is carried out attenuate, scribing, sliver, test and sorting.
The invention has the beneficial effects as follows: the laterally inclined light-emitting diode chip for backlight unit of the present invention is compared with the light-emitting diode chip for backlight unit of traditional vertical epitaxial side, but the side that the present invention tilts allows the rising angle expanded range of each exiting surface, the space lighting area enlarges, thereby has improved light extraction efficiency.
The present invention proposes a kind of manufacture craft of light-emitting diode, under the condition of traditional handicraft, increased etching extension.By control, produce the side at certain angle of inclination and come the extension etching.Do not have big rising in process complexity, the technology cost does not have very significantly to have improved light extraction efficiency under the condition of big rising yet.Simultaneously, among the present invention the processing of epitaxial loayer is helped to reduce stress in the chip, reduce the flexural deformation of chip in the course of processing, help improving attenuate, scribing, sliver effect.
The present invention has increased the etching of extension on the basis of traditional handicraft, by the angle of inclination of control etched surface, reach the purpose that improves bright dipping.The angle of inclination of the side that is etched out determines this method to improve the actual effect of bright dipping, and the lifting of light emission rate reaches maximum under certain appropriate angle.The size of this angle is with the size of chip, adopts refractive index, the factors such as the proportion of goods damageds of light in these materials of material relevant.Under the certain situation of conditions such as chip size, refractive index, optical loss rate, some angles of inclination can produce maximum amplification to light extraction efficiency down.
Description of drawings
Fig. 1: traditional light-emitting diode go out the optical range schematic diagram.
Fig. 2: the reflection schematic diagram of vertical side time between the interface.
Fig. 3: the reflection schematic diagram of inclined side time between the interface.
Fig. 4: each face goes out the optical range schematic diagram during inclined side.
Fig. 5: embodiment of the invention finished product light-emitting diode structure schematic diagram.
Fig. 6: the corrosion of embodiment of the invention extension forms the light-emitting diode processing step schematic diagram of inclined side.
Embodiment
The present invention is described further below in conjunction with drawings and Examples.
The explanation of mark among Fig. 1: θ-cirtical angle of total reflection.
The explanation of mark among Fig. 2: the incidence angle when δ-light penetrates in air from device.
The explanation of mark: α among Fig. 3-laterally inclined angle, incidence angle that incidence angle that β-light reflects between device-air interface or angle of reflection, γ-light reflect between device-air interface or angle of reflection.
The explanation of mark among Fig. 5: 1-substrate, 2-resilient coating, 3-n type layer, 4-multiple quantum well layer, 5-p type layer, 6-transparency conducting layer, 7-passivation layer, 8-N electrode, 9-P electrode.
The explanation of mark: A-has deposited the chip of passivation layer among Fig. 6, and B-finishes the chip of passivation layer etching, and C-finishes the chip of extension etching, and D-finishes the chip of passivation layer etching.
Because there are bigger difference in the backing material of light-emitting diode chip for backlight unit and the refractive index of epitaxial material and air, when light passes to the air from the inside of chip, have only the light in certain angular range to reflect away, can be returned by total reflection greater than the light of this angular range.Definition can reflect the boundary position light of scope of light and the angle θ of chip surface is the cirtical angle of total reflection, sees accompanying drawing 1.Because upper surface, the bottom surface of traditional light-emitting diode are vertical with the side, according to the geometrical property of light reflection, the incident angle after the reflection of light parallel surface is constant; Through vertical plane, the angle of incidence of light degree through the parallel surface reflection is constant again.Like this, can not pass the interface through repeatedly total reflection with regard to the light that has a lot of incident angles to surpass cirtical angle of total reflection θ (cirtical angle of total reflection when light penetrates is θ) from device in air and be mapped to and go in the air, see accompanying drawing 2.And light to propagate in medium be to want loss of energy, light can exhaust energy after total reflection repeatedly.The energy of these consumption finally is converted into heat and heats up by device.If all side surface direction by the inclination that certain angle α is vertically arranged instead, light is reflecting through inclined side so, return parallel surface, certain variation can take place in incident angle, like this under the appropriate situation of former light angle, the light that reflects through inclined side has the incidence angle less than cirtical angle of total reflection θ, and light just can pass the interface and is mapped in the air and goes like this, sees accompanying drawing 3.From general effect, but the side of inclination allow each exiting surface the rising angle expanded range one times, the space lighting area has enlarged more than one times, sees accompanying drawing 4.Like this, overall light extraction efficiency can have the lifting more than a times.Because there is optical transmission loss in actual chips, chip size has problems such as qualification, and actual light extraction efficiency promotes and has certain restriction, is sure but light extraction efficiency has lifting by a relatively large margin.
Conception based on above theory, as shown in Figure 5, the light-emitting diode chip for backlight unit that the embodiment of the invention is laterally inclined, comprise substrate 1 and be laminated in epitaxial loayer on the substrate 1, this epitaxial loayer comprises resilient coating 2, N type layer 3, multiple quantum well layer 4 and P type layer 5 successively, be coated with transparency conducting layer 6 on the P type layer 5, P type layer 5 is provided with P electrode 9, and N type layer 3 is provided with N electrode 8; The superficial growth of chip surface except that P, N electrode 9,8 has passivation layer 7; The side of epitaxial loayer is the inclined plane, and the angle of its inclination changes between 0 ° to 70 °, and the component of its epitaxial loayer is gallium nitride, zinc oxide or carborundum.
Embodiment of the invention chip size outward appearance is arbitrarily, is rectangle, square, circle or other shapes to its top plan view structure.
The preparation method of the light-emitting diode chip for backlight unit that the embodiment of the invention is laterally inclined is as follows:
1, extension grown buffer layer 2, N type layer 3, multiple quantum well layer 4 and P type layer 5 successively on substrate 1.
2, isolate photoetching, dry etching formation N type layer region.
3, the evaporation transparency conducting layer 6, alloy.Photoetching etches the scope of transparency conducting layer 6.
4, make N electrode 8, P electrode 9.Photoetching, evaporation pressure welding point metal level, stripping electrode.
5, on entire chip, make passivation layer 7.
6, photoetching, etching passivation layer 7.Make and to be exposed out by the epitaxial film materials of next step etching.
7, the method that combines with chemical corrosion and dry etching is carried out etching to epitaxial loayer, through-rate, and temperature, aspects such as etching gas component are controlled the angle of etching side, thereby form the etching extension side of inclination.
8, photoetching, etching passivation layer 7 makes electrode pads expose out.
9, wafer is carried out attenuate, scribing, sliver, test, sorting.
Embodiment: the gallium nitride based light emitting diode that with the sapphire is substrate 1 is an example.
Claims (5)
1, a kind of laterally inclined light-emitting diode chip for backlight unit, comprise substrate and be laminated in epitaxial loayer on the substrate, this epitaxial loayer comprises resilient coating, N type layer, multiple quantum well layer and P type layer successively, is coated with transparency conducting layer on the P type layer, P type layer is provided with the P electrode, and N type layer is provided with the N electrode; The superficial growth of chip surface except that P, N electrode has passivation layer; It is characterized in that: the side of its epitaxial loayer is the inclined plane.
2, laterally inclined light-emitting diode chip for backlight unit according to claim 1 is characterized in that: the laterally inclined angle of epitaxial loayer is greater than 0 °, and is less than or equal to 70 °.
3, laterally inclined light-emitting diode chip for backlight unit according to claim 1 is characterized in that: the component of epitaxial loayer is gallium nitride, zinc oxide or carborundum.
4, laterally inclined light-emitting diode chip for backlight unit according to claim 1 is characterized in that: the size outward appearance of chip is arbitrarily, is rectangle, square, circle or irregular polygon to its top plan view structure.
5, a kind of preparation method of laterally inclined light-emitting diode chip for backlight unit, at first at the substrate growing epitaxial layers, wherein epitaxial loayer comprises resilient coating, N type layer, multiple quantum well layer and P type layer; Etch N type layer region, plate transparency conducting layer, and, on entire chip, prepare passivation layer at N, P zone difference evaporation metal N, P electrode in the p type island region territory; It is characterized in that: by the protection of passivation layer, extension is carried out etching, control forms the etching side of inclination to the both sides speed of etching; Chip is carried out attenuate, scribing, sliver, test and sorting.
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| CNA2009100629737A CN101604718A (en) | 2009-07-03 | 2009-07-03 | A kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof |
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| CN101807647A (en) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | Process for manufacturing AlGaInP light-emitting diode with inclined side face |
| CN102280550A (en) * | 2011-08-16 | 2011-12-14 | 苏州纳方科技发展有限公司 | LED (Light Emitting Diode) chip with improved light emitting structure and preparation method thereof |
| CN103296169A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103296152A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103598893A (en) * | 2013-11-27 | 2014-02-26 | 中国科学院微电子研究所 | System and sensor used for measuring volume of urinary bladder and sensor encapsulating method |
| CN103633222A (en) * | 2010-09-01 | 2014-03-12 | 无限科技全球公司 | Diodes, printable compositions of a liquid or gel suspension of diodes or other two-terminal integrated circuits, and methods of making same |
| CN103779468A (en) * | 2012-10-23 | 2014-05-07 | 丰田合成株式会社 | Semiconductor light emitting element and method of manufacturing same |
| CN104241455A (en) * | 2013-06-11 | 2014-12-24 | 展晶科技(深圳)有限公司 | Led chip and manufacturing method thereof |
| CN105957937A (en) * | 2016-06-27 | 2016-09-21 | 山东浪潮华光光电子股份有限公司 | GaAs-based light-emitting diode chip and cutting method thereof |
| CN105990502A (en) * | 2016-07-22 | 2016-10-05 | 江苏国泽光电科技有限公司 | High-light extraction efficiency white LED packaging structure |
| CN108666306A (en) * | 2017-03-27 | 2018-10-16 | 英属开曼群岛商錼创科技股份有限公司 | Patterned substrate and LED wafer |
| CN110729386A (en) * | 2019-10-31 | 2020-01-24 | 佛山市国星半导体技术有限公司 | LED chip for display screen |
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- 2009-07-03 CN CNA2009100629737A patent/CN101604718A/en active Pending
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| CN101807647A (en) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | Process for manufacturing AlGaInP light-emitting diode with inclined side face |
| CN103633222A (en) * | 2010-09-01 | 2014-03-12 | 无限科技全球公司 | Diodes, printable compositions of a liquid or gel suspension of diodes or other two-terminal integrated circuits, and methods of making same |
| CN102280550B (en) * | 2011-08-16 | 2015-05-20 | 苏州纳方科技发展有限公司 | LED (Light Emitting Diode) chip with improved light emitting structure and preparation method thereof |
| CN102280550A (en) * | 2011-08-16 | 2011-12-14 | 苏州纳方科技发展有限公司 | LED (Light Emitting Diode) chip with improved light emitting structure and preparation method thereof |
| CN103296169A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103296152A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103296152B (en) * | 2012-03-01 | 2016-07-27 | 上海蓝光科技有限公司 | A kind of light emitting diode and manufacture method thereof |
| US9276170B2 (en) | 2012-10-23 | 2016-03-01 | Toyoda Gosei Co., Ltd. | Semiconductor light emitting element and method of manufacturing semiconductor light emitting element |
| CN103779468A (en) * | 2012-10-23 | 2014-05-07 | 丰田合成株式会社 | Semiconductor light emitting element and method of manufacturing same |
| CN103779468B (en) * | 2012-10-23 | 2017-04-12 | 丰田合成株式会社 | Semiconductor light emitting element and method of manufacturing same |
| CN104241455A (en) * | 2013-06-11 | 2014-12-24 | 展晶科技(深圳)有限公司 | Led chip and manufacturing method thereof |
| CN103598893B (en) * | 2013-11-27 | 2016-02-10 | 中国科学院微电子研究所 | A kind of method for packing of system, sensor and the sensor of measuring bladder volume |
| CN103598893A (en) * | 2013-11-27 | 2014-02-26 | 中国科学院微电子研究所 | System and sensor used for measuring volume of urinary bladder and sensor encapsulating method |
| CN105957937A (en) * | 2016-06-27 | 2016-09-21 | 山东浪潮华光光电子股份有限公司 | GaAs-based light-emitting diode chip and cutting method thereof |
| CN105990502A (en) * | 2016-07-22 | 2016-10-05 | 江苏国泽光电科技有限公司 | High-light extraction efficiency white LED packaging structure |
| CN108666306A (en) * | 2017-03-27 | 2018-10-16 | 英属开曼群岛商錼创科技股份有限公司 | Patterned substrate and LED wafer |
| CN108666306B (en) * | 2017-03-27 | 2021-11-16 | 英属开曼群岛商錼创科技股份有限公司 | Patterned substrate and light emitting diode wafer |
| CN110729386A (en) * | 2019-10-31 | 2020-01-24 | 佛山市国星半导体技术有限公司 | LED chip for display screen |
| CN111640832A (en) * | 2020-06-18 | 2020-09-08 | 佛山紫熙慧众科技有限公司 | Ultraviolet light LED chip structure |
| CN113990991A (en) * | 2021-11-26 | 2022-01-28 | 安徽三安光电有限公司 | Light-emitting diode and manufacturing method thereof |
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Open date: 20091216 |