CN105990502A - High-light extraction efficiency white LED packaging structure - Google Patents
High-light extraction efficiency white LED packaging structure Download PDFInfo
- Publication number
- CN105990502A CN105990502A CN201610582236.XA CN201610582236A CN105990502A CN 105990502 A CN105990502 A CN 105990502A CN 201610582236 A CN201610582236 A CN 201610582236A CN 105990502 A CN105990502 A CN 105990502A
- Authority
- CN
- China
- Prior art keywords
- light
- extraction efficiency
- wafer
- light extraction
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 title abstract description 8
- 238000004806 packaging method and process Methods 0.000 title abstract description 5
- 239000000843 powder Substances 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract 1
- 239000003292 glue Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a high-light extraction efficiency white LED packaging structure, which comprises a support carrier, an LED wafer, a lead, phosphor and a reflective cup, wherein the reflective cup is arranged on the support carrier; the LED wafer is welded on the support carrier in the reflective cup; the lead is arranged on the LED wafer; and the phosphor coats the LED wafer. According to the high-light extraction efficiency white LED packaging structure of the invention, the wafer process is easy to realize, and the effect of improving the light extraction efficiency can be realized; due to the polygonal reflective cup, the light refraction direction and the light reflection direction can be changed conveniently, and the light extraction efficiency can be well enhanced; and the current mainstream white LED packaging method does not need to be changed, and batch production is extremely easy to realize.
Description
Technical field
The invention belongs to LED technology field, be specifically related to a kind of height and take light rate White-light LED package structure.
Background technology
At present, on market, the LED white light of main flow all uses coating fluorescent glue on blue light wafer, and the hairdo exciting produces.LED wafer is the quadrangle of cuboid or square, and support carriage is circular or square catoptric arrangement design.Pursue the higher light extraction efficiency of white light LEDs, all use and promote wafer self-technique quality, improve phosphor structure, improve the albedo of support carriage, change several aspect such as refractive index of potting compound, technology bottle strength in terms of this several method has all faced lifting above so that the cost performance of white LED light source promotes the needs that increasingly can not meet market.
Content of the invention
Goal of the invention: in order to overcome difficulty in terms of brightness lifting for the existing LED white light source, it is an object of the invention to provide a kind of height and take light rate White-light LED package structure.
Technical scheme: in order to realize foregoing invention purpose, the technical solution used in the present invention is:
A kind of height takes light rate White-light LED package structure, including support carriage, LED wafer, lead-in wire, fluorescent powder and reflector；Setting reflector on described support carriage, the support carriage in reflector welding LED wafer, set lead-in wire in described LED wafer, described fluorescent powder covers in LED wafer.
Described support carriage sets support pin.
Described LED wafer is hexagon, octagon or decagon.
Described reflector is hexagon, octagon or decagon.
Beneficial effect: compared with prior art, the height of the present invention takes light rate White-light LED package structure and has the advantage that
1) shape of wafer is not rectangle or square structure, but the structure that infinite approach is circular, it on wafer technique, is easier to realize, it is not necessary to change current wafer manufacture technology, it is possible to obtain the effect of theoretic raising light extraction efficiency.
2) circular reflector can form the reflecting effect of concavees lens, it is the highest to the reflectivity of spot light in theory, restriction due to prior art, LED wafer cannot become spot light, in optical analog light line reflection, it appeared that there is considerable light, return to consume in reflector internal refraction.This polygonal reflector is conducive to changing light folding, reflection direction, advantageously in improving extraction efficiency.
3) do not need to change the method for packaging white LED of current main-stream, easily realize high-volume volume production.
Brief description
Fig. 1 height takes the top view of light rate White-light LED package structure；
Fig. 2 height takes the sectional view of light rate White-light LED package structure.
In figure: (1) bracket shell；(2) wafer；(3) wafer lead-in wire；(4) fluorescent powder；[5] support reflector space.
Detailed description of the invention
The present invention is further illustrated below in conjunction with the accompanying drawings.
As depicted in figs. 1 and 2, height takes light rate White-light LED package structure, is fixed on LED wafer 2 on support carriage 1, welds connecting lead wire 3, and after forming circuit connection, entirety is put in fluorescent powder 4, and populated colloid, after baking.Support carriage 1 sets reflector 5 and support pin 6.
Wherein, LED wafer 2 is that hexagon, octagon, decagon etc. are close to cylindrical shape.These structures, in the case of same size area, can form longer girth, also just in the case of not needing to improve wafer epitaxial quality, define longer side and go out light path, increase and more go out light probability, destroy the ratio of LED wafer interior lights total reflection.
Reflector 5 part of support carriage 1, is that hexagon, octagon, decagon etc. connect rotund shape and structure.LED wafer 2, use glue to be fixed on the support carriage of this new type reflection cup design, use conventional methods the silica-based or epoxy-based glue welding contact conductor, using mixed fluorescent powder body, dry fixing, exciting through fluorescent material, can form the white light color in the range of colour temperature 2000 ~ 25000K.
Claims (4)
1. one kind high takes light rate White-light LED package structure, it is characterised in that: include support carriage (1), LED wafer (2), lead-in wire (3), fluorescent powder (4) and reflector (5)；Described support carriage (1) sets reflector (5), upper welding LED wafer of the support carriage (1) in reflector (5) (2), described LED wafer (2) sets lead-in wire (3), described fluorescent powder (4) covers in LED wafer (2).
2. height according to claim 1 takes light rate White-light LED package structure, it is characterised in that: on described support carriage (1), set support pin (6).
3. height according to claim 1 takes light rate White-light LED package structure, it is characterised in that: described LED wafer (2) is hexagon, octagon or decagon.
4. height according to claim 1 takes light rate White-light LED package structure, it is characterised in that: described reflector (5) is hexagon, octagon or decagon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610582236.XA CN105990502A (en) | 2016-07-22 | 2016-07-22 | High-light extraction efficiency white LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610582236.XA CN105990502A (en) | 2016-07-22 | 2016-07-22 | High-light extraction efficiency white LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105990502A true CN105990502A (en) | 2016-10-05 |
Family
ID=57044681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610582236.XA Pending CN105990502A (en) | 2016-07-22 | 2016-07-22 | High-light extraction efficiency white LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105990502A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110572909A (en) * | 2019-09-12 | 2019-12-13 | 山东晶导微电子股份有限公司 | LED lighting circuit and chip packaging structure thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604718A (en) * | 2009-07-03 | 2009-12-16 | 武汉华灿光电有限公司 | A kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof |
| CN204558522U (en) * | 2015-04-13 | 2015-08-12 | 博罗承创精密工业有限公司 | A kind of LED support with staged reflector |
| CN105633237A (en) * | 2016-03-23 | 2016-06-01 | 映瑞光电科技(上海)有限公司 | Vertical light emitting diode (LED) chip |
| CN205881940U (en) * | 2016-07-22 | 2017-01-11 | 江苏国泽光电科技有限公司 | Light rate white light LED packaging structure is got to height |
-
2016
- 2016-07-22 CN CN201610582236.XA patent/CN105990502A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604718A (en) * | 2009-07-03 | 2009-12-16 | 武汉华灿光电有限公司 | A kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof |
| CN204558522U (en) * | 2015-04-13 | 2015-08-12 | 博罗承创精密工业有限公司 | A kind of LED support with staged reflector |
| CN105633237A (en) * | 2016-03-23 | 2016-06-01 | 映瑞光电科技(上海)有限公司 | Vertical light emitting diode (LED) chip |
| CN205881940U (en) * | 2016-07-22 | 2017-01-11 | 江苏国泽光电科技有限公司 | Light rate white light LED packaging structure is got to height |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110572909A (en) * | 2019-09-12 | 2019-12-13 | 山东晶导微电子股份有限公司 | LED lighting circuit and chip packaging structure thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20130328078A1 (en) | Small-size led packaging structure for enhancing light emitting angle | |
| CN111219611A (en) | Full-angle luminous bulb | |
| TWI441359B (en) | Light-emitting diode packaging structure of low angular correlated color temperature deviation | |
| CN103219449A (en) | Light-emitting diode (LED) packaging structure and LED packaging method | |
| CN103367609B (en) | The LED encapsulating structure of low spatial colour cast | |
| CN105990502A (en) | High-light extraction efficiency white LED packaging structure | |
| CN205881940U (en) | Light rate white light LED packaging structure is got to height | |
| CN104241502B (en) | LED packaging structure | |
| CN201508856U (en) | High-power white-light LED | |
| CN105070812A (en) | Light emitting diode device | |
| CN103956357B (en) | A kind of manufacture method of LED filament | |
| CN201966209U (en) | Polycrystal packing structure of mixed light type | |
| CN204760416U (en) | LED encapsulation module and LED lamps and lanterns that have this LED encapsulation module | |
| CN208460790U (en) | A kind of LED component and LED light | |
| CN103035816A (en) | Light emitting module and light emitting device thereof | |
| CN109742214B (en) | Large-angle light-emitting LED packaging structure | |
| CN114294573A (en) | COB module light source for enhancing central light intensity and manufacturing method | |
| CN106098902A (en) | A kind of high-brightness LED patch support | |
| CN109659405B (en) | LED light mixing device and manufacturing method thereof | |
| CN101943376B (en) | LED packaging structure for eliminating glare | |
| CN209726097U (en) | A kind of large-angle LED lens | |
| CN101656289A (en) | Through hole type light-emitting diode | |
| CN209729944U (en) | A kind of wide-angle light extracting LED encapsulating structure | |
| CN205385041U (en) | All -angle luminous light -emitting diode (LED) light source | |
| CN112635639B (en) | White light LED device with uniform space character temperature distribution |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161005 |
|
| RJ01 | Rejection of invention patent application after publication |