CN201508856U - High-power white-light LED - Google Patents
High-power white-light LED Download PDFInfo
- Publication number
- CN201508856U CN201508856U CN2009202374634U CN200920237463U CN201508856U CN 201508856 U CN201508856 U CN 201508856U CN 2009202374634 U CN2009202374634 U CN 2009202374634U CN 200920237463 U CN200920237463 U CN 200920237463U CN 201508856 U CN201508856 U CN 201508856U
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- CN
- China
- Prior art keywords
- wafer
- square
- reflector
- light led
- falope ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Abstract
The utility model discloses a high-power white-light LED which comprises a bracket, a wafer and a peripheral encapsulated colloid, wherein a square reflecting cup is arranged on the bracket, a square groove which is slightly larger than the wafer is arranged on the inner bottom surface of the reflecting cup, a square silica gel ring whose top portion is level to the top portion of the reflecting cup is rounded on the periphery of the outer edge of the square groove, the wafer is placed in the square groove which is filled with binding agent, the distance between the periphery of the wafer with the square silica gel ring is equal to the height between the upper surface of the wafer and the upper surface of the square silica gel ring, fluorescent powder adhesive is coated on the periphery and the upper surface of the wafer, the upper surface of the fluorescent powder adhesive is level to the top portion of the square silica gel ring, and a surface electrode of the wafer is connected with the positive pin and the negative pin of the bracket through gold wires. As fluorescent powder adhesive on the periphery and the upper surface of the wafer is even in thickness in the high-power white-light LED, the high-power white-light LED prepared has even light spot without yellow ring and blue ring after being lit, and is beneficially used in the lighting field widely.
Description
Technical field
The utility model relates to the LED technical field, relates in particular to a kind of large power white light LED.
Background technology
In recent years, along with the lasting lifting of LED wafer luminous efficiency, white light LEDs product especially large power white light LED more and more is subjected to people's extensive attention, and progressively enters road lighting, commercial lighting and general lighting field.Large power white light LED has advantages such as energy-saving and environmental protection, and conventional light source such as alternative fluorescent lamp, Metal halogen lamp have very outstanding advantage aspect energy-saving and emission-reduction.
At present, hot spot, the photochromic effect of raising white light LEDs are one of focuses of encapsulation technology research.As shown in Figure 1, existing large power white light LED, its structure comprises support 1 ', wafer 2 ' and peripheral packing colloid, support 1 ' is provided with circular reflector 11 ', wafer 2 ' is positioned in the circular reflector 11 ', and be coated with elargol 3 ' between the inner bottom surface of the reflector 11 ' of wafer 2 ' and circle, be connected by gold thread 4 ' between the both positive and negative polarity pin of the surface electrode of wafer 2 ' and support 1 ', the surface coverage of wafer 2 ' has phosphor gel 5 ', directly over the surface of wafer 2 ', phosphor gel 5 ' is the pinnacle shape that exceeds reflector 11 ' top.
There is following shortcoming in this large power white light LED: (1) reflector 11 ' is for circular, and wafer 2 ' is square, wafer 2 ' phosphor gel 5 ' skewness all around; (2) phosphor gel 5 ' of wafer 2 ' upper surface coating as shown in Figure 1, can occur blue light on every side at wafer 2 ' reveals, and the phosphor gel 5 ' that is coated with directly over the surface of wafer 2 ' is blocked up, and gold-tinted is on the high side, causes produced large power white light LED to have phenomenons such as Lan Quan, yellow circle.
The utility model content
The purpose of this utility model is to provide a kind of large power white light LED, and it has light effect Wu Lanquan, does not have the bad phenomenon of yellow circle, and hot spot, photochromic even.
The technical solution of the utility model is such: a kind of large power white light LED, comprise support, wafer and peripheral packing colloid, support is provided with reflector, wafer is fixed in this reflector by crystal-bonding adhesive, be connected by gold thread between the both positive and negative polarity pin of the surface electrode of wafer and support, the surface coverage of wafer has phosphor gel; The inner chamber cross section of this reflector is square, the inner bottom surface of this reflector is provided with the square indentations more bigger than this wafer, the notch week of this square indentations is along being arranged with square falope ring, the inboard week of this square falope ring along notch week of square indentations therewith, the top of this square falope ring top of reflector therewith flushed along corresponding; This crystal-bonding adhesive is filled in this square indentations, this wafer is positioned in this square indentations that is filled with crystal-bonding adhesive, and this wafer around the spacing size of the square falope ring upper surface height size between the upper surface of square falope ring therewith that equals this wafer therewith; This phosphor gel coating is covered in around this wafer and upper surface, and the upper surface of this phosphor gel flushes at the top of square falope ring therewith.
The thickness of above-mentioned crystal-bonding adhesive is suitable with the degree of depth of above-mentioned square indentations.
After adopting such scheme, a kind of large power white light LED of the present utility model, its beneficial effect is: since wafer around and the spacing size of square falope ring equal height size between the upper surface of the upper surface of wafer and square falope ring, and the upper surface of phosphor gel and the top of square falope ring flush, like this, the phosphor gel thickness that reaches upper surface around the wafer is even, the phosphor gel that is coated with forms " recessed " type after toasting, can make that the large power white light LED hot spot when lighting for preparing is even, Wu Huangquan and Lan Quan, the hot spot of avoiding conventional fluorescent powder spot printing method etc. to cause, photochromic uneven bad phenomenon helps large power white light LED and is widely used in lighting field.
Description of drawings
Fig. 1 is the structural representation (omitting peripheral packing colloid) of existing large power white light LED;
Fig. 2 is structural representation of the present utility model (omitting peripheral packing colloid);
Fig. 3 is the structural representation of the uncoated fluorescent material of the utility model;
Fig. 4 is the structural representation of the utility model medium-height trestle.
Embodiment
A kind of large power white light LED of the present utility model, as Fig. 2, Fig. 3, shown in Figure 4, comprise support 1, wafer 2 and peripheral packing colloid, support 1 is provided with reflector 11, the inner chamber cross section of reflector 11 is square, the inner bottom surface of reflector 11 middle part offers the square indentations 12 more bigger than wafer 2, the notch week of this square indentations 12 is along being arranged with square falope ring 13, the inboard week of this square falope ring 13 along with notch week of square indentations 12 along corresponding, the top of this square falope ring 13 top of reflector 11 therewith flushes; Crystal-bonding adhesive 3 is filled in the square indentations 12, and the degree of depth of the thickness of crystal-bonding adhesive 3 and square indentations 12 is suitable, wafer 2 is positioned in the square indentations 12 that is filled with crystal-bonding adhesive 3, and wafer 2 around and the spacing size of square falope ring 13 equal height size between the upper surface of the square therewith falope ring 13 of upper surface of this wafer 2; Phosphor gel 5 coatings are covered in around this wafer 2 and upper surface, and the top of the square therewith falope ring 13 of the upper surface of this phosphor gel 5 flushes; Be that 99.99% gold thread 4 or other composite gold wires are connected by purity between the both positive and negative polarity pin of the surface electrode of wafer 2 and support 1.
Large power white light LED of the present utility model forms by following process manufacturing:
At first, support reflector processing: adopt the high-power LED bracket 1 that has square reflector 11, utilize the inner bottom surface middle part processing square indentations 12 of laser processing technology at reflector 11;
Its two, little processing of model and polishing: prepare model, with model by little processing and polishing, make its bottom surface be square, size equals the size of square indentations 12, but is slightly larger than the size of wafer 2, and the top of the last plane of model and reflector 11 flushes;
Its three, model is installed: the model that processes is fixed in the square indentations 12;
Its four, injecting glue baking forms falope ring: wadding warp is crossed proportioning and is vacuumized the silica gel of processing around model, forms square falope ring 13 through baking around model;
Its five, take out model: in the middle of the square falope ring 13 that has solidified, take out models, just form square falope ring 13 in the reflector 11 with square cavity volume;
Its six, the some crystal-bonding adhesive: be coated with an amount of crystal-bonding adhesive 3 square indentations 12 in, the degree of depth of the thickness of crystal-bonding adhesive 3 and square indentations 12 is suitable;
Its seven, Gu brilliant: wafer 2 is fixed in the square indentations 12 of coating crystal-bonding adhesive 3, make wafer 2 around and the spacing size of square falope ring 13 equal height size between the upper surface of the upper surface of wafer 2 and square falope ring 13;
Its eight, the gold thread bonding: to adopt purity be 99.99% gold thread 4 or other composite gold wires carries out bonding with the positive and negative pin pad of support 1 respectively with the positive and negative electrode on wafer 2 surfaces, keeps good being electrically connected;
Its nine, fluorescent material coating: will be covered in wafer 2 through phosphor gel 5 coatings of certain proportioning and upper surface all around, the top of the upper surface of phosphor gel 5 and square falope ring 13 flushes.
Its ten, phosphor gel baking: through 130 ℃~160 ℃ bakings, phosphor gel 5 is solidified, form " recessed " type of falling.
At last, peripheral packing colloid moulding: adopt the PC lens to inject silica gel and make the colloid moulding, protect the lead-in wire of inner bonding, and rising angle is effectively regulated and control through baking molding or employing Molding sealing adhesive process.
Claims (2)
1. large power white light LED, comprise support, wafer and peripheral packing colloid, support is provided with reflector, and wafer is fixed in this reflector by crystal-bonding adhesive, be connected by gold thread between the both positive and negative polarity pin of the surface electrode of wafer and support, the surface coverage of wafer has phosphor gel; It is characterized in that: the inner chamber cross section of this reflector is square, the inner bottom surface of this reflector is provided with the square indentations more bigger than this wafer, the notch week of this square indentations is along being arranged with square falope ring, the inboard week of this square falope ring along notch week of square indentations therewith, the top of this square falope ring top of reflector therewith flushed along corresponding; This crystal-bonding adhesive is filled in this square indentations, this wafer is positioned in this square indentations that is filled with crystal-bonding adhesive, and this wafer around the spacing size of the square falope ring upper surface height size between the upper surface of square falope ring therewith that equals this wafer therewith; This phosphor gel coating is covered in around this wafer and upper surface, and the upper surface of this phosphor gel flushes at the top of square falope ring therewith.
2. a kind of large power white light LED according to claim 1 is characterized in that: the thickness of above-mentioned crystal-bonding adhesive is suitable with the degree of depth of above-mentioned square indentations.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2009202374634U CN201508856U (en) | 2009-10-13 | 2009-10-13 | High-power white-light LED |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2009202374634U CN201508856U (en) | 2009-10-13 | 2009-10-13 | High-power white-light LED |
Publications (1)
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CN201508856U true CN201508856U (en) | 2010-06-16 |
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CN2009202374634U Expired - Fee Related CN201508856U (en) | 2009-10-13 | 2009-10-13 | High-power white-light LED |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185051A (en) * | 2011-04-25 | 2011-09-14 | 刘振亮 | Light-emitting, radiating and wiring process of light-emitting diode (LED) outdoor product chip integrated package |
CN102280539A (en) * | 2011-08-18 | 2011-12-14 | 深圳市瑞丰光电子股份有限公司 | Method for making white light emitting diode (LED) chip, white LED chip and white LED |
CN103227277A (en) * | 2013-03-27 | 2013-07-31 | 王定锋 | Welding-wire-free LED packaging method and LED packaging structure |
CN103456867A (en) * | 2013-09-09 | 2013-12-18 | 无锡奥旭光电科技有限公司 | Directly inserted LED support structure |
CN105720166A (en) * | 2014-12-05 | 2016-06-29 | 晶能光电(江西)有限公司 | White-light LED chip preparation method |
-
2009
- 2009-10-13 CN CN2009202374634U patent/CN201508856U/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185051A (en) * | 2011-04-25 | 2011-09-14 | 刘振亮 | Light-emitting, radiating and wiring process of light-emitting diode (LED) outdoor product chip integrated package |
CN102185051B (en) * | 2011-04-25 | 2013-02-06 | 刘振亮 | Light-emitting, radiating and wiring process of light-emitting diode (LED) outdoor product chip integrated package |
CN102280539A (en) * | 2011-08-18 | 2011-12-14 | 深圳市瑞丰光电子股份有限公司 | Method for making white light emitting diode (LED) chip, white LED chip and white LED |
CN103227277A (en) * | 2013-03-27 | 2013-07-31 | 王定锋 | Welding-wire-free LED packaging method and LED packaging structure |
CN103456867A (en) * | 2013-09-09 | 2013-12-18 | 无锡奥旭光电科技有限公司 | Directly inserted LED support structure |
CN105720166A (en) * | 2014-12-05 | 2016-06-29 | 晶能光电(江西)有限公司 | White-light LED chip preparation method |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100616 Termination date: 20111013 |