CN101515622A - Surface coarsening LED chip and manufacturing method thereof - Google Patents
Surface coarsening LED chip and manufacturing method thereof Download PDFInfo
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- CN101515622A CN101515622A CNA2009100377721A CN200910037772A CN101515622A CN 101515622 A CN101515622 A CN 101515622A CN A2009100377721 A CNA2009100377721 A CN A2009100377721A CN 200910037772 A CN200910037772 A CN 200910037772A CN 101515622 A CN101515622 A CN 101515622A
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Abstract
The invention discloses a surface coarsening LED chip and a manufacturing method thereof. A pyramidal optical microstructure is formed at the front of a substrate; an n type semiconductor layer, a luminous layer and a p type semiconductor layer are grown on the front of the etched substrate; a negative electrode weld line area is formed by etching, a negative electrode metal layer is manufactured on the negative electrode weld line area, a positive electrode metal layer is manufactured on the p type semiconductor layer; the pyramidal optical microstructure is formed at the local negative electrode weld line area among the negative electrode metal layer and the luminous layer and the p type semiconductor layer; burnishing by abrasion is carried out on the back of the substrate, then the pyramidal optical microstructure is formed on the back thereof. The pyramidal optical microstructure of the invention can reduce times of the total reflection of light and prevent part of light being absorbed by chips through the total reflection, thus facilitating the light emitted from the chips to be refracted to the outer surface of the chips at the highest speed with the greatest possibility, avoiding visible light resonance of the light inside the chips and improving light-emitting efficiency of the chips of the LED.
Description
[technical field]
The present invention relates to a kind of chip, especially relate to a kind of light-emitting diode chip for backlight unit of surface coarsening.
The invention still further relates to a kind of manufacture method of chip, especially relate to a kind of manufacture method of light-emitting diode chip for backlight unit of surface coarsening.
[background technology]
So-called light-emitting diode (Light-Emitting Diode) is exactly that the semi-conducting material that will possess direct gap is made the P/N diode, and under thermally equilibrated condition, most electronics does not have enough energy to rise to conductive strips.Impose forward Times pressure again, then electronics can rise to conductive strips, and the original position of electronics on former valence bond band promptly produces the hole.Depress at suitable Times, electronics, hole just can P/N interface zone (P-N Juction) in conjunction with and luminous, the electric current of power supply can constantly replenish electronics and hole and give N type semiconductor and P type semiconductor, make electronics, hole in conjunction with and luminous being continued carries out.The luminous principle of LED is the combination in electronics and hole, and the energy of electron institute band discharges with the form of light, is called spontaneous radiation.The light that general LED is emitted is to belong to this type.
There is the defective that luminous efficiency is very low, the life-span is short in the light-emitting diode of Chu Xianing the earliest, the substrate of its light-emitting diode chip for backlight unit is to adopt smooth plane, grow n type layer, luminescent layer, p type layer, n type electrode layer and p type electrode layer in the method by the chip processing procedure on the substrate on substrate, the above-mentioned described n type layer that grows on substrate, luminescent layer and p type layer nearly all are comparatively smooth planes.Refraction principle according to light, when light is mapped to the interface of thin (being that propagation velocity is bigger therein for the light) medium of light from light close (being that propagation velocity is less therein for light) medium, light will leave the normal refraction, when incidence angle is increased to certain situation, fringence will prolong the surface and carry out, be that the refraction angle is 90 °, this incidence angle is called critical angle.If incidence angle greater than critical angle, does not then have refraction, whole equal backspace optically denser media of light, the total reflection of light has just appearred in this phenomenon.According to the refraction principle of above-mentioned light, because the refractive index of chip greater than the refractive index of air, is only injected airborne from chip by refraction.Because the substrate and the exiting surface of chip all are comparatively smooth planes, during energising, light is issued on the light-emitting area of chip from different angles in chip, when the incidence angle of part light in chip during greater than critical angle, repeatedly total reflection can take place by the exiting surface of chip and the bottom of substrate in this part light, light produces visible light resonance in chip, thereby makes the light of part total reflection convert heat energy to, makes entire chip produce higher heat.Therefore, the manufacturing of this chip exists the defective that the life-span is short, light extraction efficiency is low.
Continuous lifting along with chip processing procedure ability, luminous efficiency and brightness that light-emitting diode requires constantly increase, traditional chip processing procedure can not solve the heat dissipation problem of large-power light-emitting diodes and the technical problem that improves light efficiency, powerful light-emitting diode also replaces traditional low power LED gradually, the structure of high-power chip extension is identical with traditional light emitting diode construction, but chip fabrication technique really is not quite similar.The area of high-power LED chip is bigger than traditional common LED area of chip, and great power LED is will produce a large amount of heats when using under than the operational environment of large power supply.
For the heat that common LED and great power LED produced is spread out, electric energy is converted into luminous energy substantially, light extraction efficiency with common LED and great power LED further promotes simultaneously, all is one of problem of industry research staff emphasis solution all the time.
[summary of the invention]
The technical problem to be solved in the present invention is: a kind of light-emitting diode chip for backlight unit that improves luminous efficiency, surface coarsening that has is provided.
In addition, another technical problem of the present invention's solution is: a kind of manufacture method with the light-emitting diode chip for backlight unit that improves luminous efficiency, surface coarsening is provided.
For the invention provides a kind of have improve luminous efficiency, the light-emitting diode chip for backlight unit of surface coarsening, its technical problem is achieved through the following technical solutions, a kind of light-emitting diode chip for backlight unit, comprise: substrate, be formed at the n type semiconductor layer of substrate face, be formed at the luminescent layer on the n type semiconductor layer, be formed at the p type semiconductor layer on the luminescent layer, the negative electrode wire welding area that on the n type semiconductor layer, forms by etching, at the positive electrode metal level of p type semiconductor layer formation and the negative electrode metal level that on the negative electrode wire welding area, forms, in the front of substrate, the back side and the local negative electrode wire welding area between negative electrode metal level and luminescent layer and p type semiconductor layer are provided with the optical microstructures of taper.
Optimal way also is formed with current-diffusion layer on the described p type semiconductor layer.
Optimal way is provided with the optical microstructures of taper on described current-diffusion layer surface.
Optimal way, described pyramidal height are 0.5～5 μ m, and base diameter is 2～10 μ m; For reaching better light reflecting effect, described pyramidal height is preferably 1.5～4 μ m, and base diameter is preferably 4～8 μ m.
Optimal way, the pattern line distance that the pattern line that described positive electrode metal level forms to negative electrode metal level forms equates.
Optimal way, described positive and negative electrode metal layer thickness are 1～5 μ m; In order to reach better effect, described positive and negative electrode metal layer thickness amount is well 2～3 μ m.
Optimal way is provided with the electric current barrier between described p type semiconductor layer and the positive electrode metal layer contacting position;
Optimal way also is coated with oxide reflector and metallic reflector respectively at the back side of described substrate.
For the invention provides a kind of manufacture method that improves light-emitting diode chip for backlight unit luminous efficiency, surface coarsening that has, its technical problem is to solve by following steps: the optical microstructures that (a) forms taper in substrate face; (b) substrate face growing n-type semiconductor layer, luminescent layer and the p type semiconductor layer after etching forms the negative electrode wire welding area by etching; (c) on the negative electrode wire welding area, make the negative electrode metal level, on the p type semiconductor layer, make the positive electrode metal level; (d) the local negative electrode wire welding area between negative electrode metal level and luminescent layer and the p type semiconductor layer forms the optical microstructures of taper; (e) substrate back forms the optical microstructures of taper by behind the grinding and polishing at the back side of substrate.
Optimal way, in step (b) afterwards, step (c) also is formed with current-diffusion layer before on the p type semiconductor layer.
Optimal way is at the optical microstructures of described current-diffusion layer surface formation taper.
Optimal way, described pyramidal height are 0.5～5 μ m, and base diameter is 2～10 μ m; For reaching better light reflecting effect, described pyramidal height is preferably 1.5～4 μ m, and base diameter is preferably 4～8 μ m.
Optimal way, the pattern line distance that the pattern line that the positive electrode metal level forms to negative electrode metal level forms equates.
Optimal way, described positive and negative electrode metal layer thickness are 1～5 μ m; In order to reach better effect, the positive and negative electrode metal layer thickness is 2～3 μ m.
Optimal way is provided with the electric current barrier between described p type semiconductor layer and the positive electrode metal layer contacting position;
Optimal way also is taken up in order of priority at the back side of described substrate to be coated with oxide reflector and metallic reflector.
The invention has the beneficial effects as follows: manufacturing method according to the invention, form the optical microstructures of taper at front, the back side and the local negative electrode wire welding area between negative electrode metal level and luminescent layer and p type semiconductor layer of chip substrate, the optical microstructures of taper can reduce the total reflection number of times of light, avoid part light to be absorbed by chip because of total reflection, the optical microstructures by taper can allow the light that sends in the chip the fastest, be refracted to chip outer surface most possibly.Thereby the total reflection problem of traditional LED before having improved greatly, avoided light that visible light resonance takes place in chip, farthest electric energy is converted into luminous energy, increased substantially the external quantum efficiency of LED, adopt the present invention, light extraction efficiency has more more than 50% than the light extraction efficiency of traditional light-emitting diode chip for backlight unit.
[description of drawings]
Fig. 1 is the cross-sectional view of first kind of embodiment of the light-emitting diode chip for backlight unit of surface coarsening of the present invention and manufacture method thereof.
Fig. 2 is the cross-sectional view of second kind of embodiment of the light-emitting diode chip for backlight unit of surface coarsening of the present invention and manufacture method thereof.
Fig. 3 is the cross-sectional view of the third embodiment of the light-emitting diode chip for backlight unit of surface coarsening of the present invention and manufacture method thereof.
Fig. 4 is the cross-sectional view of the 4th kind of embodiment of the light-emitting diode chip for backlight unit of surface coarsening of the present invention and manufacture method thereof.
Fig. 5 is the floor map of first kind of embodiment of the light-emitting diode chip for backlight unit of surface coarsening of the present invention shown in Figure 1 and manufacture method thereof.
Fig. 6 is the light-emitting diode chip for backlight unit of Fig. 2, surface coarsening of the present invention shown in Figure 3 and second kind and the floor map of the third embodiment of manufacture method thereof.
Fig. 7 is the floor map of the 4th kind of embodiment of the diode chip for backlight unit of light-emitting area alligatoring of the present invention shown in Figure 4 and manufacture method thereof.
Fig. 8 a, Fig. 8 b form the structural representation of the optical microstructures of taper in the microscopically demonstration for the local negative electrode wire welding area of the present invention.
Fig. 9 a, Fig. 9 b form the structural representation of the optical microstructures of taper in the microscopically demonstration for the substrate face of chip of the present invention.
Figure 10 a, Figure 10 b form the structural representation of the optical microstructures of taper in the microscopically demonstration for the substrate back of chip of the present invention.
Figure 11 a, Figure 11 b form the structural representation of the optical microstructures of taper in the microscopically demonstration for the current-diffusion layer surface of chip of the present invention.
[embodiment]
Describe embodiments of the invention with reference to accompanying drawing in detail by embodiment.
First kind of specific embodiment such as Fig. 1 and shown in Figure 5, light-emitting diode chip for backlight unit of the present invention, comprise substrate 1, be formed at the n type semiconductor layer 2 in substrate 1 front, be formed at the luminescent layer 3 on the n type semiconductor layer 2, be formed at the p type semiconductor layer 4 on the luminescent layer 3, the negative electrode wire welding area 15 that on n type semiconductor layer 2, forms by etching, at the positive electrode metal level 7 of p type semiconductor layer 4 formation and the negative electrode metal level 8 that on negative electrode wire welding area 15, forms, be provided with the optical microstructures 10 of taper in the front of substrate 1, be provided with the optical microstructures 11 of taper and the optical microstructures 9 that the local negative electrode wire welding area 15 between negative electrode metal level 8 and luminescent layer 3 and p type semiconductor layer 4 is provided with taper at the back side of substrate 1.The optical microstructures 9,10,11 of taper is exactly when making chip, on each interface of said chip, form the structure of surface coarsening by lithographic method, the formed optical microstructures that is shaped as taper of its surface coarsening, the optical microstructures 9,10,11 of described taper is arranged on each interface of chip, as shown in Figure 1 regularly.The effect of the optical microstructures of described taper is: the optical microstructures of taper can reduce the total reflection number of times of light, avoid part light to be absorbed by chip because of total reflection, can allow the light that sends in the chip the fastest, be refracted to chip outer surface most possibly, the chip of the optical microstructures of employing taper can improve the total reflection problem of traditional LED, avoided light that visible light resonance takes place in chip, farthest electric energy is converted into luminous energy, increase substantially the external quantum efficiency of LED, thereby realized improving the light extraction efficiency of light-emitting diode chip for backlight unit.Pyramidal height is 0.5～5 μ m, and base diameter is 2～10 μ m; For reaching better light reflecting effect, the height of the optical microstructures 9 of taper preferably is set to 1.5～4 μ m, and base diameter is preferably 4～8 μ m.For electric current can be spread on chip surface uniformly, the equidistant setting of pattern line that the pattern line that positive electrode metal level 7 is formed forms to negative electrode metal level 8, just a certain position of the pattern line of positive electrode metal level equates to the distance of the pattern line of adjacent negative electrode metal level 8, with reference to shown in Figure 5.Described positive electrode metal level 7 is 1～5 μ m with the thickness of negative electrode metal level 8; In order to reach better bright dipping and heat-conducting effect, described positive electrode metal level 7 is 2～3 μ m with the thickness of negative electrode metal level 8, and the material of positive electrode metal level 7 and negative electrode metal level 8 can be selected from the metal of extinction not as silver, aluminium, chromium, nickel, copper or platinum.For the light that chip produced is reflected, preferably electroplate one deck oxide reflector 12 and metallic reflector 13 respectively at the back side of the substrate 1 of the optical microstructures 9 that is provided with taper in the shortest time.The backing material that this example adopted is selected sapphire for use, can be selected from gallium nitride at the positive material that forms n type semiconductor layer 2 of Sapphire Substrate, the material that forms luminescent layer 3 on n type semiconductor layer 2 can be selected from aluminium indium gallium nitrogen, and the material that forms p type semiconductor layer 4 on luminescent layer 3 can be selected from gallium nitride.
Second kind of specific embodiment such as Fig. 2 and shown in Figure 6, present embodiment is on the basis of above-mentioned first kind of specific embodiment, also be formed with current-diffusion layer 6 on described p type semiconductor layer 4, the effect of described current-diffusion layer 6 is that electric current is spread apart equably, and it is even to reach brightness when making chip light emitting.
The third specific embodiment such as Fig. 3 and shown in Figure 6, present embodiment is on the basis of above-mentioned first kind or second kind specific embodiment, between p type semiconductor layer 4 and positive electrode metal level 7 contact positions, also be provided with electric current barrier 5, the effect of described electric current barrier 5 is to stop a large amount of electric currents to flow into the localized positions that positive electrode metal level 7 contacts with p type semiconductor layer 4, therefore, electric current is evenly diffused throughout on positive electrode metal level 7 luminescent layer 3 in addition, thereby reduced the absorption of 7 pairs of light of positive electrode metal level to the full extent, avoided the local bright dark phenomenon of light-emitting diode chip for backlight unit to take place.
The 4th kind of specific embodiment such as Fig. 4 and shown in Figure 7, present embodiment is on the basis of above-mentioned second kind or the third specific embodiment, be provided with the optical microstructures 14 of taper on the surface of current-diffusion layer 6, the effect of the optical microstructures 14 of described taper is identical with first kind of described effect of specific embodiment, just improve the total reflection problem of traditional LED, avoid light that visible light resonance takes place in chip, farthest electric energy is converted into luminous energy, increase substantially the external quantum efficiency of LED, thereby realize putting forward the luminous efficiency of light-emitting diodes chip.
The manufacture method of light-emitting diode chip for backlight unit of the present invention is, at the sapphire substrate 1 positive optical microstructures 10 that forms taper, concrete manufacture method is at the substrate 1 positive layer protecting film layer that pastes, the material of described protective film is with photoresist optional, silicon dioxide, silicon nitride or metallic nickel, utilize gold-tinted photoetching and inductance coupling type reactive ion etching machine to use the method for reactive ion chemical etching then, with reacting gas such as chlorine, boron chloride and methane etc. is etched substrate 1 front optionally, make the substrate 1 positive optical microstructures 10 that forms taper, shown in Fig. 9 a and 9b; The substrate 1 positive MOCVD equipment that adopts after etching is with organic metal gas growing n-type semiconductor layer 2 successively, luminescent layer 3 and p type semiconductor layer 4, the n type semiconductor layer 2 of the substrate 1 positive growth of this manufacture method after etching is selected gallium nitride for use, the luminescent layer 3 aluminium indium gallium nitrogen luminescent layers of growth on n type semiconductor layer 2, the p type semiconductor layer 3 of growth is selected gallium nitride for use on luminescent layer 3.Method by etching forms negative electrode wire welding area 15 with part n type semiconductor layer 2, for electric current can be spread on chip surface uniformly, the equidistant setting of pattern line that the pattern line that positive electrode metal level 7 is formed forms to negative electrode metal level 8, just a certain position of the pattern line of positive electrode metal level 7 equates to the distance of the pattern line of adjacent negative electrode metal level 8.Make negative electrode metal level 8 on negative electrode wire welding area 15,4 make positive electrode metal level 7 on the p type semiconductor layer; Local negative electrode wire welding area 15 between negative electrode metal level 8 and luminescent layer 3 and p type semiconductor layer 4 forms the optical microstructures 9 of taper, shown in Fig. 8 a and 8b.Concrete manufacture method is to paste the layer protecting film layer on the local negative electrode wire welding area 15 between negative electrode metal level 8 and luminescent layer 3 and the p type semiconductor layer 4, the material of described protective film is with photoresist optional, silicon dioxide, silicon nitride or metallic nickel, utilize gold-tinted photoetching and inductance coupling type reactive ion etching machine to use the method for reactive ion chemical etching then, with reacting gas such as chlorine, boron chloride and methane etc. is the local negative electrode wire welding area 15 between etching negative electrode metal level 8 and luminescent layer 3 and the p type semiconductor layer 4 optionally, makes local negative electrode wire welding area 15 between negative electrode metal level 8 and luminescent layer 3 and the p type semiconductor layer 4 form the optical microstructures 9 of tapers; After passing through grinding and polishing, substrate 1 back side forms the optical microstructures 11 of taper, shown in Figure 10 a and 10b.Concrete manufacture method is to paste the layer protecting film layer at substrate 1 back side; the material of described protective film is optional with photoresist, silicon dioxide, silicon nitride or metallic nickel; utilize gold-tinted photoetching and inductance coupling type reactive ion etching machine to use the method for reactive ion chemical etching then with reacting gas; as etched substrate 1 back side optionally such as chlorine, boron chloride and methane, make substrate 1 back side form the optical microstructures 11 of taper.The optical microstructures 9,10,11 of described taper is arranged on each interface of said chip, shown in Fig. 8 a, 8b, 9a, 9b, 10a, 10b regularly.The back side at described substrate 1 also is coated with oxide reflector 12 and metallic reflector 13 respectively.In above-mentioned steps, when adopting MOCVD equipment with organic metal gas growing n-type semiconductor layer 2 successively, luminescent layer 3 and p type semiconductor layer 3, equally by MOCVD equipment with the organic metal gas one deck current-diffusion layer 6 of on p type semiconductor layer 3, also growing, and between p type semiconductor layer 3 and positive electrode metal level 7 contact positions, electric current barrier 5 is set, with reference to shown in attached 3,4.Be made into the optical microstructures 14 of taper on current-diffusion layer 6 surfaces, shown in Figure 11 a and 11b.Concrete manufacture method is to paste the layer protecting film layer on the surface of current-diffusion layer 6; the material of described protective film is optional with photoresist, silicon dioxide, silicon nitride or metallic nickel; utilize gold-tinted photoetching and inductance coupling type reactive ion etching machine to use the method for reactive ion chemical etching then with reacting gas; as the surface of etching current-diffusion layer 6 optionally such as chlorine, boron chloride and methane; make the optical microstructures 14 of the surface formation taper of current-diffusion layer 6, with reference to shown in Figure 4.The pattern line that the positive electrode metal level of being mentioned in the above-mentioned manufacture method 7 forms equates that to the pattern line distance that negative electrode metal level 8 forms shown in accompanying drawing 5,6,7, described positive and negative electrode metal layer thickness is 1～5 μ m; In order to make the better effects if of bright dipping and heat conduction, the positive and negative electrode metal layer thickness is 2～3 μ m, and positive electrode metal level 7 can be selected from the not metal of extinction with the material of negative electrode metal level 8, as silver, aluminium, chromium, nickel, copper or platinum.The above-mentioned method of mentioning of passing through photoetching forms the optical microstructures 10 of taper in the front of substrate 1, the back side of substrate 1 forms the optical microstructures 11 of taper, forms in the optical microstructures 14 at the optical microstructures 9 that forms taper on the local negative electrode wire welding area 15 that forms between negative electrode metal level 8 and luminescent layer 3 and the p type semiconductor layer 4 and on current-diffusion layer 6 surfaces, described pyramidal height is 0.5～5 μ m, and base diameter is 2～10 μ m; For reaching better light reflecting effect, described pyramidal height is preferably 1.5～4 μ m, and base diameter is preferably 4～8 μ m.
The above is all so that the present invention conveniently to be described, in the spiritual category that does not break away from the present invention's creation, the various simple covert and modification that those skilled in the art did of being familiar with this technology still belongs to protection scope of the present invention.
Claims (20)
1. the light-emitting diode chip for backlight unit of a surface coarsening comprises:
Substrate is formed at the n type semiconductor layer of substrate face;
Be formed at the luminescent layer on the n type semiconductor layer;
Be formed at the p type semiconductor layer on the luminescent layer;
The negative electrode wire welding area that on the n type semiconductor layer, forms by etching;
At the positive electrode metal level of p type semiconductor layer formation and the negative electrode metal level that on the negative electrode wire welding area, forms;
It is characterized in that: at front, the back side of substrate and the local negative electrode wire welding area that between negative electrode metal level and luminescent layer and p type semiconductor layer, forms be provided with the optical microstructures of taper.
2. the light-emitting diode chip for backlight unit of surface coarsening according to claim 1 is characterized in that: also be formed with current-diffusion layer on described p type semiconductor layer.
3. the light-emitting diode chip for backlight unit of surface coarsening according to claim 2 is characterized in that: the optical microstructures that is provided with taper on described current-diffusion layer surface.
4. according to the light-emitting diode chip for backlight unit of claim 1 or 2 or 3 described surface coarsenings, it is characterized in that: described pyramidal height is 0.5～5 μ m, and base diameter is 2～10 μ m.
5. the light-emitting diode chip for backlight unit of surface coarsening according to claim 4, it is characterized in that: described pyramidal height is 1.5～4 μ m, base diameter is 4～8 μ m.
6. according to the light-emitting diode chip for backlight unit of claim 1 or 2 or 3 described surface coarsenings, it is characterized in that: the pattern line distance that the pattern line that described positive electrode metal level forms to negative electrode metal level forms equates.
7. the light-emitting diode chip for backlight unit of surface coarsening according to claim 6, it is characterized in that: described positive and negative electrode metal layer thickness is 1～5 μ m.
8. the light-emitting diode chip for backlight unit of surface coarsening according to claim 7, it is characterized in that: the positive and negative electrode metal layer thickness is 2～3 μ m.
9. according to the light-emitting diode chip for backlight unit of claim 1 or 2 or 3 described surface coarsenings, it is characterized in that: be provided with the electric current barrier between described p type semiconductor layer and the positive electrode metal layer contacting position.
10. according to the light-emitting diode chip for backlight unit of claim 1 or 2 or 3 described surface coarsenings, it is characterized in that: the back side at described substrate also is coated with oxide reflector and metallic reflector respectively.
11. the method for manufacturing LED chip of surface coarsening according to claim 1 is characterized in that may further comprise the steps:
(a) form the optical microstructures of taper in substrate face;
(b) substrate face growing n-type semiconductor layer, luminescent layer and the p type semiconductor layer after etching forms the negative electrode wire welding area by etching;
(c) on the negative electrode wire welding area, make the negative electrode metal level, on the p type semiconductor layer, make the positive electrode metal level;
(d) the local negative electrode wire welding area between negative electrode metal level and luminescent layer and p type semiconductor layer forms the optical microstructures of taper;
(e) substrate back forms the optical microstructures of taper by behind the grinding and polishing at the back side of substrate.
12. the method for manufacturing LED chip of surface coarsening according to claim 11 is characterized in that: in step (b) afterwards, step (c) before, the current-diffusion layer of on the p type semiconductor layer, growing.
13. the method for manufacturing LED chip of surface coarsening according to claim 12 is characterized in that: the optical microstructures that forms taper on described current-diffusion layer surface.
14. the method for manufacturing LED chip according to claim 11 or 12 or 13 described surface coarsenings is characterized in that: described pyramidal height is 0.5～5 μ m, and base diameter is 2～10 μ m.
15. the method for manufacturing LED chip of surface coarsening according to claim 14 is characterized in that: described pyramidal height is 1.5～4 μ m, and base diameter is 4～8 μ m.
16. the method for manufacturing LED chip according to claim 11 or 12 or 13 described surface coarsenings is characterized in that: the pattern line distance that the pattern line that the positive electrode metal level forms to negative electrode metal level forms equates.
17. the method for manufacturing LED chip of surface coarsening according to claim 16 is characterized in that: described positive and negative electrode metal layer thickness is 1～5 μ m.
18. the method for manufacturing LED chip of surface coarsening according to claim 17 is characterized in that: the positive and negative electrode metal layer thickness is 2～3 μ m.
19. the method for manufacturing LED chip according to claim 11 or 12 or 13 described surface coarsenings is characterized in that: between described p type semiconductor layer and the positive electrode metal layer contacting position electric current barrier is set.
20. the method for manufacturing LED chip according to claim 11 or 12 or 13 described surface coarsenings is characterized in that: also be taken up in order of priority at the back side of described substrate to be coated with oxide reflector and metallic reflector.
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| CN101908590A (en) * | 2010-07-28 | 2010-12-08 | 武汉迪源光电科技有限公司 | Efficient light-emitting diode (LED) of triangular cone light-emitting surface |
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| CN102569577A (en) * | 2010-12-27 | 2012-07-11 | 同方光电科技有限公司 | Light-emitting diode with improved light-emitting efficiency and preparation method thereof |
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| CN101908590A (en) * | 2010-07-28 | 2010-12-08 | 武汉迪源光电科技有限公司 | Efficient light-emitting diode (LED) of triangular cone light-emitting surface |
| CN103098239A (en) * | 2010-09-24 | 2013-05-08 | 首尔Opto仪器股份有限公司 | High-efficiency light emitting diode |
| CN103098239B (en) * | 2010-09-24 | 2017-03-15 | 首尔伟傲世有限公司 | Efficient LED |
| CN102420280A (en) * | 2010-09-25 | 2012-04-18 | 亚威朗光电(中国)有限公司 | Semiconductor light-emitting diode |
| CN102569577A (en) * | 2010-12-27 | 2012-07-11 | 同方光电科技有限公司 | Light-emitting diode with improved light-emitting efficiency and preparation method thereof |
| CN102637798A (en) * | 2011-02-14 | 2012-08-15 | 同方光电科技有限公司 | Light emitting diode (LED) structure and manufacture method of LED structure |
| CN103178179A (en) * | 2011-12-23 | 2013-06-26 | 山东浪潮华光光电子股份有限公司 | Silicide compound substrate GaN based LED (Light-Emitting Diode) chip with two patterned sides and manufacturing method thereof |
| CN103178179B (en) * | 2011-12-23 | 2015-04-01 | 山东浪潮华光光电子股份有限公司 | Silicide compound substrate GaN based LED (Light-Emitting Diode) chip with two patterned sides and manufacturing method thereof |
| US11393950B2 (en) * | 2018-03-16 | 2022-07-19 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light-emitting diode device and method for manufacturing the same |
| US11721789B2 (en) | 2018-03-16 | 2023-08-08 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light-emitting diode device and method for manufacturing the same |
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