CN201450021U - Surface coarsening LED (light emitting diode) chip - Google Patents
Surface coarsening LED (light emitting diode) chip Download PDFInfo
- Publication number
- CN201450021U CN201450021U CN2009200523403U CN200920052340U CN201450021U CN 201450021 U CN201450021 U CN 201450021U CN 2009200523403 U CN2009200523403 U CN 2009200523403U CN 200920052340 U CN200920052340 U CN 200920052340U CN 201450021 U CN201450021 U CN 201450021U
- Authority
- CN
- China
- Prior art keywords
- light
- chip
- type semiconductor
- emitting diode
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model discloses a surface coarsening LED (light emitting diode) chip. A pyramidal optical microstructure is formed at the obverse side of an underlayer. An n-type semiconductor layer, a luminous layer and a p-type semiconductor layer are formed at the obverse side of the corroded underlayer; a negative-electrode wire welding zone is formed through corrosion, a negative-electrode metal layer is manufactured on the negative-electrode wire welding zone, and a positive-electrode metal layer is manufactured on the p-type semiconductor layer. The pyramidal optical microstructure is formed on the partial negative-electrode wire welding zone between the negative-electrode metal layer as well as the luminous layer and the p-type semiconductor layer. After the reverse side of the underlayer is ground and polished, the pyramidal optical microstructure is formed at the reverse side of the underlayer. The pyramidal optical microstructure can reduce number of times of total light reflection, avoid partial light from being absorbed by the chip due to total reflection, lead light emitted by the chip to be refracted onto the outer surface of the chip to the maximum degree, and avoid visible light resonance in the chip, thereby increasing the luminous efficiency of the LED chip.
Description
[technical field]
The utility model relates to a kind of chip, especially relates to a kind of light-emitting diode chip for backlight unit of surface coarsening.
[background technology]
So-called light-emitting diode (Light-Emitting Diode)) be exactly that the semi-conducting material that will possess direct gap is made the P/N diode, under thermally equilibrated condition, most electronics does not have enough energy to rise to conductive strips.Impose forward Times pressure again, then electronics can rise to conductive strips, and the original position of electronics on former valence bond band promptly produces the hole.Depress at suitable Times, electronics, hole just can P/N interface zone (P-N Juction) in conjunction with and luminous, the electric current of power supply can constantly replenish electronics and hole and give N type semiconductor and P type semiconductor, make electronics, hole in conjunction with and luminous being continued carries out.The luminous principle of LED is the combination in electronics and hole, and the energy of electron institute band discharges with the form of light, is called spontaneous radiation.The light that general LED is emitted is to belong to this type.
There is the defective that luminous efficiency is very low, the life-span is short in the light-emitting diode of Chu Xianing the earliest, the substrate of its light-emitting diode chip for backlight unit is to adopt smooth plane, grow n type layer, luminescent layer, p type layer, n type electrode layer and p type electrode layer in the method by the chip processing procedure on the substrate on substrate, the above-mentioned described n type layer that grows on substrate, luminescent layer and p type layer nearly all are comparatively smooth planes.Refraction principle according to light, when light is mapped to the interface of thin (being that propagation velocity is bigger therein for the light) medium of light from light close (being that propagation velocity is less therein for light) medium, light will leave the normal refraction, when incidence angle is increased to certain situation, fringence will prolong the surface and carry out, be that the refraction angle is 90 °, this incidence angle is called critical angle.If incidence angle greater than critical angle, does not then have refraction, whole equal backspace optically denser media of light, the total reflection of light has just appearred in this phenomenon.According to the refraction principle of above-mentioned light, because the refractive index of chip greater than the refractive index of air, is only injected airborne from chip by refraction.Because the substrate and the exiting surface of chip all are comparatively smooth planes, during energising, light is issued on the light-emitting area of chip from different angles in chip, when the incidence angle of part light in chip during greater than critical angle, repeatedly total reflection can take place by the exiting surface of chip and the bottom of substrate in this part light, light produces visible light resonance in chip, thereby makes the light of part total reflection convert heat energy to, makes entire chip produce higher heat.Therefore, the manufacturing of this chip exists the defective that the life-span is short, light extraction efficiency is low.
Continuous lifting along with chip processing procedure ability, luminous efficiency and brightness that light-emitting diode requires constantly increase, traditional chip processing procedure can not solve the heat dissipation problem of large-power light-emitting diodes and the technical problem that improves light efficiency, powerful light-emitting diode also replaces traditional low power LED gradually, the structure of high-power chip extension is identical with traditional light emitting diode construction, but chip fabrication technique really is not quite similar.The area of high-power LED chip is bigger than traditional common LED area of chip, and great power LED is will produce a large amount of heats when using under than the operational environment of large power supply.
For the heat that common LED and great power LED produced is spread out, electric energy is converted into luminous energy substantially, light extraction efficiency with common LED and great power LED further promotes simultaneously, all is one of problem of industry research staff emphasis solution all the time.
[utility model content]
The technical problems to be solved in the utility model is: a kind of light-emitting diode chip for backlight unit with high-luminous-efficiency, surface coarsening is provided.
For the utility model provide a kind of have improve luminous efficiency, the light-emitting diode chip for backlight unit of surface coarsening, its technical problem is achieved through the following technical solutions, a kind of light-emitting diode chip for backlight unit of surface coarsening, comprise: substrate, be formed at the n type semiconductor layer of substrate face, be formed at the luminescent layer on the n type semiconductor layer, be formed at the p type semiconductor layer on the luminescent layer, the negative electrode wire welding area that on the n type semiconductor layer, forms by etching, at the positive electrode metal level of p type semiconductor layer formation and the negative electrode metal level that on the negative electrode wire welding area, forms, in the front of substrate, the back side and the local negative electrode wire welding area between negative electrode metal level and luminescent layer and p type semiconductor layer are provided with the optical microstructures of taper.
The beneficial effects of the utility model are: the optical microstructures that forms taper at front, the back side and the local negative electrode wire welding area between negative electrode metal level and luminescent layer and p type semiconductor layer of chip substrate, the optical microstructures of taper can reduce the total reflection number of times of light, avoid part light to be absorbed by chip because of total reflection, the optical microstructures by taper can allow the light that sends in the chip the fastest, be refracted to chip outer surface most possibly.Thereby the total reflection problem of traditional LED before having improved greatly, avoided light that visible light resonance takes place in chip, farthest electric energy is converted into luminous energy, increased substantially the external quantum efficiency of LED, adopt the utility model, light extraction efficiency has more more than 50% than the light extraction efficiency of traditional light-emitting diode chip for backlight unit.
[description of drawings]
Fig. 1 is the cross-sectional view of first kind of embodiment of the present utility model.
Fig. 2 is the cross-sectional view of second kind of embodiment of the present utility model.
Fig. 3 is the cross-sectional view of the third embodiment of the present utility model.Fig. 4 is the cross-sectional view of the 4th kind of embodiment of the present utility model.
Fig. 5 is the floor map of first kind of embodiment of the present utility model shown in Figure 1.
Fig. 6 is second kind and the floor map of the third embodiment of Fig. 2, shown in Figure 3 the utility model.
Fig. 7 is the floor map of the 4th kind of embodiment of the present utility model shown in Figure 4.
Fig. 8 a, Fig. 8 b are that the local negative electrode wire welding area of the utility model forms the structural representation of the optical microstructures of taper in the microscopically demonstration.
Fig. 9 a, Fig. 9 b are that the substrate face of the utility model chip forms the structural representation of the optical microstructures of taper in the microscopically demonstration.
Figure 10 a, Figure 10 b are that the substrate back of the utility model chip forms the structural representation of the optical microstructures of taper in the microscopically demonstration.
Figure 11 a, Figure 11 b are that the current-diffusion layer surface of the utility model chip forms the structural representation of the optical microstructures of taper in the microscopically demonstration.
[embodiment]
Describe embodiment of the present utility model with reference to accompanying drawing in detail by embodiment.
First kind of specific embodiment such as Fig. 1 and shown in Figure 5, the utility model light-emitting diode chip for backlight unit, comprise substrate 1, be formed at the n type semiconductor layer 2 in substrate 1 front, be formed at the luminescent layer 3 on the n type semiconductor layer 2, be formed at the p type semiconductor layer 4 on the luminescent layer 3, the negative electrode wire welding area 15 that on n type semiconductor layer 2, forms by etching, at the positive electrode metal level 7 of p type semiconductor layer 4 formation and the negative electrode metal level 8 that on negative electrode wire welding area 15, forms, be provided with the optical microstructures 10 of taper in the front of substrate 1, be provided with the optical microstructures 11 of taper and the optical microstructures 9 that the local negative electrode wire welding area 15 between negative electrode metal level 8 and luminescent layer 3 and p type semiconductor layer 4 is provided with optical microstructures 9. tapers of taper at the back side of substrate 1,10,11 is exactly when making chip, on each interface of said chip, form the structure of surface coarsening by lithographic method, the formed optical microstructures that is shaped as taper of its surface coarsening, the optical microstructures 9 of described taper, 10,11 are arranged on each interface of chip regularly, referring to accompanying drawing 8a, 8b, 9a, 9b, 10a, shown in the 10b. the effect of the optical microstructures of described taper is: the optical microstructures of taper can reduce the total reflection number of times of light, avoid part light to be absorbed by chip because of total reflection, can allow the light that sends in the chip the fastest, be refracted to chip outer surface most possibly, the chip of the optical microstructures of employing taper can improve the total reflection problem of traditional LED, avoided light that visible light resonance takes place in chip, farthest electric energy is converted into luminous energy, increased substantially the external quantum efficiency of LED, thereby realized improving the light extraction efficiency of light-emitting diode chip for backlight unit. pyramidal height is 0.5～5 μ m, and base diameter is 2～10 μ m; For reaching better light reflecting effect, the height of the optical microstructures 9 of taper preferably is set to 1.5～4 μ m, base diameter is preferably 4～8 μ m. and can spreads uniformly on chip surface in order to make electric current, the equidistant setting of pattern line that the pattern line that positive electrode metal level 7 is formed forms to negative electrode metal level 8, just a certain position of the pattern line of positive electrode metal level 7 equates to the distance of the pattern line of adjacent negative electrode metal level 8, with reference to shown in Figure 5. described positive electrode metal level 7 is 1～5 μ m with the thickness of negative electrode metal level 8; In order to reach better bright dipping and heat-conducting effect, described positive electrode metal level 7 is 2～3 μ m with the thickness of negative electrode metal level 8, positive electrode metal level 7 can be selected from the not metal such as the silver of extinction with the material of negative electrode metal level 8, aluminium, chromium, nickel, copper or platinum. for the light that chip produced was reflected in the shortest time, preferably electroplate one deck oxide reflector 12 respectively and 13. backing materials that example adopted of metallic reflector are selected sapphire for use at the back side of the substrate 1 of the optical microstructures 9 that is provided with taper, can be selected from gallium nitride at the positive material that forms n type semiconductor layer 2 of Sapphire Substrate, the material that forms luminescent layer 3 on n type semiconductor layer 2 can be selected from aluminium indium gallium nitrogen, and the material that forms p type semiconductor layer 4 on luminescent layer 3 can be selected from gallium nitride.
Second kind of specific embodiment such as Fig. 2 and shown in Figure 6, present embodiment is on the basis of above-mentioned first kind of specific embodiment, on described p type semiconductor layer 4, also be formed with current-diffusion layer 6, the effect of described current-diffusion layer 6 is that electric current is spread apart equably, and it is even to reach brightness when making chip light emitting.
The third specific embodiment such as Fig. 3 and shown in Figure 6, present embodiment is on the basis of above-mentioned first kind or second kind specific embodiment, between p type semiconductor layer 4 and positive electrode metal level 7 contact positions, also be provided with electric current barrier 5, the effect of described electric current barrier 5 is to stop a large amount of electric currents to flow into the localized positions that positive electrode metal level 7 contacts with p type semiconductor layer 4, therefore, electric current is evenly diffused throughout on positive electrode metal level 7 luminescent layer 3 in addition, thereby reduced the absorption of 7 pairs of light of positive electrode metal level to the full extent, avoided the local bright dark phenomenon of light-emitting diode chip for backlight unit to take place.
The 4th kind of specific embodiment such as Fig. 4 and shown in Figure 7, present embodiment is on the basis of above-mentioned second kind or the third specific embodiment, be provided with the optical microstructures 14 of taper on the surface of current-diffusion layer 6, shown in Figure 11 a and 11b, the effect of the optical microstructures 14 of described taper is identical with first kind of described effect of specific embodiment, just improve the total reflection problem of traditional LED, avoid light that visible light resonance takes place in chip, farthest electric energy is converted into luminous energy, increase substantially the external quantum efficiency of LED, thereby realize putting forward the luminous efficiency of light-emitting diodes chip.
The above is all so that the utility model conveniently to be described, in the spiritual category that does not break away from the utility model creation, the various simple covert and modification that those skilled in the art did of being familiar with this technology still belongs to protection range of the present utility model.
Claims (10)
1. the light-emitting diode chip for backlight unit of a surface coarsening comprises:
Substrate is formed at the n type semiconductor layer of substrate face;
Be formed at the luminescent layer on the n type semiconductor layer;
Be formed at the p type semiconductor layer on the luminescent layer;
The negative electrode wire welding area that on the n type semiconductor layer, forms by etching;
At the positive electrode metal level of p type semiconductor layer formation and the negative electrode metal level that on the negative electrode wire welding area, forms;
It is characterized in that: at front, the back side of substrate and the local negative electrode wire welding area that between negative electrode metal level and luminescent layer and p type semiconductor layer, forms be provided with the optical microstructures of taper.
2. the light-emitting diode chip for backlight unit of a kind of surface coarsening according to claim 1 is characterized in that: also be formed with current-diffusion layer on described p type semiconductor layer.
3. the light-emitting diode chip for backlight unit of a kind of surface coarsening according to claim 2 is characterized in that: the optical microstructures that is provided with taper on described current-diffusion layer surface.
4. according to the light-emitting diode chip for backlight unit of claim 1 or 2 or 3 described a kind of surface coarsenings, it is characterized in that: described pyramidal height is 0.5～5 μ m, and base diameter is 2～10 μ m.
5. the light-emitting diode chip for backlight unit of a kind of surface coarsening according to claim 4, it is characterized in that: described pyramidal height is 1.5～4 μ m, base diameter is 4～8 μ m.
6. according to the light-emitting diode chip for backlight unit of claim 1 or 2 or 3 described a kind of surface coarsenings, it is characterized in that: the pattern line distance that the pattern line that described positive electrode metal level forms to negative electrode metal level forms equates.
7. the light-emitting diode chip for backlight unit of a kind of surface coarsening according to claim 6, it is characterized in that: described positive and negative electrode metal layer thickness is 1～5 μ m.
8. the light-emitting diode chip for backlight unit of a kind of surface coarsening according to claim 7, it is characterized in that: the positive and negative electrode metal layer thickness is 2～3 μ m.
9. according to the light-emitting diode chip for backlight unit of claim 1 or 2 or 3 described a kind of surface coarsenings, it is characterized in that: be provided with the electric current barrier between described p type semiconductor layer and the positive electrode metal layer contacting position.
10. according to the light-emitting diode chip for backlight unit of claim 1 or 2 or 3 described a kind of surface coarsenings, it is characterized in that: the back side at described substrate also is coated with oxide reflector and metallic reflector respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200523403U CN201450021U (en) | 2009-03-09 | 2009-03-09 | Surface coarsening LED (light emitting diode) chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200523403U CN201450021U (en) | 2009-03-09 | 2009-03-09 | Surface coarsening LED (light emitting diode) chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201450021U true CN201450021U (en) | 2010-05-05 |
Family
ID=42554743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200523403U Expired - Fee Related CN201450021U (en) | 2009-03-09 | 2009-03-09 | Surface coarsening LED (light emitting diode) chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201450021U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255023A (en) * | 2010-05-19 | 2011-11-23 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) and manufacturing method thereof |
| CN102655194A (en) * | 2012-05-23 | 2012-09-05 | 中国科学院半导体研究所 | Method for improving light emitting efficiency of ultraviolet light emitting diode |
| CN107425097A (en) * | 2017-08-09 | 2017-12-01 | 甘志银 | A kind of method for improving deep ultraviolet LED light extraction efficiency |
| WO2021196556A1 (en) * | 2020-04-02 | 2021-10-07 | 亿信科技发展有限公司 | Light-emitting diode device and manufacturing method therefor, and display panel |
-
2009
- 2009-03-09 CN CN2009200523403U patent/CN201450021U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255023A (en) * | 2010-05-19 | 2011-11-23 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) and manufacturing method thereof |
| CN102655194A (en) * | 2012-05-23 | 2012-09-05 | 中国科学院半导体研究所 | Method for improving light emitting efficiency of ultraviolet light emitting diode |
| CN107425097A (en) * | 2017-08-09 | 2017-12-01 | 甘志银 | A kind of method for improving deep ultraviolet LED light extraction efficiency |
| WO2021196556A1 (en) * | 2020-04-02 | 2021-10-07 | 亿信科技发展有限公司 | Light-emitting diode device and manufacturing method therefor, and display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202423369U (en) | Light-emitting diode chip | |
| CN101515622A (en) | Surface coarsening LED chip and manufacturing method thereof | |
| CN208127232U (en) | A kind of LED chip construction | |
| CN101604718A (en) | A kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof | |
| CN104638078A (en) | Light emitting diode and manufacturing method for same | |
| CN101325237A (en) | LED chip and manufacturing method thereof | |
| CN102969422B (en) | Manufacturing method of LED (Light Emitted Diode) with high light transmittance and inverted structure | |
| CN202004040U (en) | LED chip based on double-side substrate with concave holes and component-gradient buffer layer | |
| CN201450021U (en) | Surface coarsening LED (light emitting diode) chip | |
| CN101494273A (en) | Light-emitting diode chip and method of manufacturing the same | |
| MX2012000756A (en) | High brightness led utilizing a roughened active layer and conformal cladding. | |
| CN103904174A (en) | Manufacturing method for LED chip | |
| CN103022310A (en) | Light extraction layer of LED luminous chip and LED device | |
| CN100438108C (en) | P.N electrode of tree leaf vein-shaped high power gallium nitride LED chip | |
| CN200986927Y (en) | LED with micro-optical structure | |
| CN102157639A (en) | LED (Light-Emitting Diode) chip and preparation method thereof | |
| CN103441198A (en) | LED high-brightness upside-down mounting chip and manufacture method thereof | |
| CN1889278A (en) | Method for raising chip brightness | |
| CN217405451U (en) | Composite patterned substrate and epitaxial structure with air gap | |
| CN208208785U (en) | Light emitting diode | |
| CN208655680U (en) | A kind of light-emitting diode chip for backlight unit | |
| CN101140962A (en) | Method for enhancing chip brightness | |
| CN204029846U (en) | A kind of novel light-emitting diode | |
| CN101257068A (en) | Method for enhancing light extraction efficiency of high power light-emitting diode | |
| CN203165931U (en) | Light emitting diode chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100505 Termination date: 20180309 |