WO2021196556A1 - Light-emitting diode device and manufacturing method therefor, and display panel - Google Patents

Abstract

Provided are a light-emitting diode device and a manufacturing method therefor, and a display panel. The micro light-emitting diode device comprises: a plurality of light-emitting units, wherein each of the light-emitting units comprises a first semiconductor layer, a second semiconductor layer and a multi-quantum-well layer; common electrode layers of a grid shape; a plurality of driving electrodes; and at least one superstructure layer, wherein the superstructure layer is located at a light-emitting display side of each of the light-emitting units; each superstructure layer comprises a plurality of superstructure units; the superstructure units in the same superstructure layer correspond to the light-emitting units on a one-to-one basis; each of the superstructure units is provided with a plurality of recess structures or a plurality of protrusion structures; and the superstructure units are configured to change the light intensity distribution characteristic of light emergent from the light-emitting units.

Description

Light-emitting diode device, manufacturing method thereof, and display panel

The present disclosure claims the priority of a Chinese patent application filed with the Chinese Patent Office with an application number of 202010254643.4 on April 2, 2020, and the entire content of the above application is incorporated into the present disclosure by reference.

Technical field

This application relates to display technology, for example, to a light emitting diode device, a manufacturing method thereof, and a display panel.

Background technique

The micron light-emitting diode device (Microled) involves the technology of thinning, miniaturizing, and arraying the LED structure design, and its size is generally on the micron level. The display technology based on micro-light-emitting diodes is to transfer micro-light-emitting diodes to the drive circuit substrate in batches, and then package them to form micro-light-emitting diode devices.

In the related art, when the micron light-emitting diode device develops towards miniaturization, there is a problem of reduced efficiency. When its size is very small, its performance will be affected by sidewall effects related to surface and internal defects (such as open adhesion, contamination, and structural damage). These defects cause non-radiative carrier reorganization to accelerate, greatly reducing the micron The luminous efficiency of light-emitting diode devices requires higher luminous brightness to be achieved by increasing the working current and working voltage, which brings great challenges to the heat dissipation of micron light-emitting diode devices.

Summary of the invention

The embodiments of the present application provide a light-emitting diode device, a manufacturing method thereof, and a display panel, so as to achieve ultra-high light-emitting brightness and small-angle emission of the emitted light, thereby improving the light utilization rate.

In the first aspect, an embodiment of the present application provides a light emitting diode device, including:

A plurality of light emitting units, each of the light emitting units includes a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer located between the first semiconductor layer and the second semiconductor layer;

The common electrode layer is in a grid shape. The grid of the common electrode layer surrounds the grid to form a plurality of first openings, and the first openings expose the light-emitting unit; the common electrode layer and the first semiconductor layer are electrically connected to each other. connect;

A plurality of driving electrodes, the driving electrodes are located on a side of the second semiconductor layer away from the multiple quantum well layer, and the driving electrodes are electrically connected to the second semiconductor layer;

At least one superstructure layer, the superstructure layer is located on the light emitting display side of the light-emitting unit; each of the superstructure layers includes a plurality of superstructure units, the first opening exposes the superstructure unit, and the same The super structure unit in the super structure layer corresponds to the light emitting unit one-to-one, each of the super structure unit is provided with a plurality of concave structures or a plurality of convex structures, and the super structure unit is configured to change the The light intensity distribution characteristics of the light emitted by the light-emitting unit, the light intensity distribution characteristics include the light divergence angle and the deflection direction of the chief ray.

Optionally, the surface of each of the first semiconductor layers away from the multiple quantum well layer is etched to form the superstructure layer.

Optionally, each of the first semiconductor layers includes an N-type gallium nitride layer, and each of the second semiconductor layers includes a P-type gallium nitride layer; the first semiconductor layers of a plurality of the light-emitting units are mutually Connected as one;

The common electrode layer is located on the surface of the first semiconductor layer adjacent to the multiple quantum well layer.

Optionally, a first groove is provided on a side of the first semiconductor layer adjacent to the multiple quantum well layer, and the common electrode layer is located in the first groove.

Optionally, it further includes at least one buffer layer, the buffer layer being located on a side of the first semiconductor layer away from the multiple quantum well layer;

The surface of at least one buffer layer adjacent to the multiple quantum well layer is etched to form the superstructure layer.

Optionally, it further includes at least one buffer layer, the buffer layer being located on a side of the first semiconductor layer away from the multiple quantum well layer;

The buffer layer in contact with the first semiconductor layer is provided with a second groove on a side adjacent to the multiple quantum well layer, and the common electrode layer is located in the second groove;

In a direction perpendicular to the buffer layer, the thickness of the common electrode layer is smaller than the depth of the second groove.

Optionally, the distance between the edges of the first semiconductor layer of any two light-emitting units is greater than zero.

Optionally, it further includes a support layer, the support layer being located on a side of the at least one buffer layer away from the multiple quantum well layer.

Optionally, each of the superstructure units is provided with a plurality of convex structures, and the plurality of convex structures include a plurality of cylindrical projections;

In the same superstructure layer, all the raised structures have the same height;

In the same superstructure layer, the protrusion structures in different superstructure units have different diameters.

Optionally, a quantum dot film is further included, and the quantum dot film is located on a side of the first semiconductor layer away from the multiple quantum well layer.

In a second aspect, an embodiment of the present application provides a display panel including the light-emitting diode device described in the first aspect; and

A driving chip, the driving chip includes a first electrode and a plurality of second electrodes, the first electrode is electrically connected to the common electrode layer, and the plurality of second electrodes are in a one-to-one correspondence with the plurality of driving electrodes. connect.

Optionally, each of the drive electrodes includes a first end surface and a second end surface, the first end surface is located between the second end surface and the light-emitting unit, and in each of the drive electrodes, the first end surface The area of the end surface is larger than the area of the second end surface.

In a third aspect, an embodiment of the present application provides a method for manufacturing a light emitting diode device, including:

Provide support layer;

Forming a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one meta-layer on the light-emitting display side of the light-emitting unit;

Wherein, each of the light-emitting units includes a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer located between the first semiconductor layer and the second semiconductor layer; the common electrode layer is a grid A plurality of first openings are formed around the grid of the common electrode layer, and the first openings expose the light-emitting unit; the common electrode layer is electrically connected to the first semiconductor layer; the driving electrode is located The second semiconductor layer is far away from the multiple quantum well layer, and the driving electrode is electrically connected to the second semiconductor layer; each of the meta-layers includes a plurality of meta-units, and the first opening Exposing the superstructure unit, the superstructure unit in the same superstructure layer corresponds to the light-emitting unit one-to-one, and each of the superstructure units is provided with a plurality of concave structures or a plurality of convex structures, The superstructure unit is configured to change the light intensity distribution characteristics of the light emitted by the light-emitting unit, and the light intensity distribution characteristics include the light divergence angle and the deflection direction of the chief ray.

Optionally, forming a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one meta-layer on the light-emitting display side of the light-emitting unit includes:

Forming the plurality of light-emitting units on one side of the supporting layer;

Forming a common electrode layer on the first semiconductor layer between two adjacent light-emitting units, and forming a driving electrode on the side of the light-emitting unit away from the support layer;

Flip the side of the support layer on which the light-emitting unit is provided onto the temporary substrate, and remove the support layer;

Etching the surface of the first semiconductor layer away from the multiple quantum well layer to form the superstructure layer.

Optionally, forming the multiple light-emitting units on one side of the supporting layer includes:

Forming a first semiconductor film layer, a multiple quantum well film layer and a second semiconductor film layer in sequence on one side of the support layer;

Etching the second semiconductor film layer, the multiple quantum well film layer and part of the first semiconductor film layer to form the plurality of light emitting units;

Wherein, the first semiconductor layers of a plurality of the light-emitting units are connected to each other as a whole, the first semiconductor layer is provided with a first groove on the side adjacent to the multiple quantum well layer, and the common electrode layer is located in the The first groove.

Optionally, forming a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one meta-layer on the light-emitting display side of the light-emitting unit includes:

At least one buffer layer is formed on one side of the support layer, and at least one meta-layer is formed by etching the surface of at least one buffer layer on the side away from the support layer;

Etching the surface of the buffer layer furthest from the support layer to form a second groove, and forming the common electrode layer in the second groove;

Sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;

Bonding the side of the temporary substrate provided with the first semiconductor film layer to the side of the supporting layer provided with the buffer layer, and removing the temporary substrate;

Forming a driving electrode film layer on the side of the second semiconductor film layer away from the support layer;

The driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer are etched to form the plurality of light emitting units and the plurality of driving electrodes.

Optionally, forming at least one buffer layer on one side of the support layer, and etching at least one surface of the buffer layer on the side away from the support layer to form at least one meta-structure layer includes:

Forming a buffer layer on one side of the support layer, and etching the surface of the buffer layer away from the support layer to form a superstructure layer;

A buffer layer is formed on the temporary substrate, and the side of the temporary substrate provided with the buffer layer is bonded to the side of the support layer provided with the buffer layer, and the temporary substrate is removed ；

Etch the surface of the buffer layer farthest from the support layer on the side far from the support layer to form a superstructure layer;

Repeat the steps of forming a new buffer layer on the temporary substrate, bonding, and etching the buffer layer bonded to the support layer to form a new meta-layer, until a predetermined number of the meta-layers are formed.

Optionally, forming a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one meta-layer on the light-emitting display side of the light-emitting unit includes:

Forming a buffer layer on one side of the support layer, etching the surface of the buffer layer away from the support layer to form a second groove, and forming the common electrode layer in the second groove;

Etching the surface of the buffer layer away from the support layer to form a superstructure layer;

Sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;

Bonding the side of the temporary substrate provided with the first semiconductor film layer to the side of the supporting layer provided with the buffer layer, and removing the temporary substrate;

Forming a driving electrode film layer on the side of the second semiconductor film layer away from the support layer;

The driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer are etched to form the plurality of light emitting units and the plurality of driving electrodes.

Optionally, in a direction perpendicular to the buffer layer, the thickness of the common electrode layer is smaller than the depth of the second groove.

Optionally, forming a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one meta-layer on the light-emitting display side of the light-emitting unit includes:

Forming a buffer layer on one side of the support layer, etching the surface of the buffer layer away from the support layer to form a second groove, and forming the common electrode layer in the second groove;

Sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;

Etching the surface of the first semiconductor film layer away from the temporary substrate to form a superstructure layer;

Bonding the side of the temporary substrate provided with the first semiconductor film layer to the side of the supporting layer provided with the buffer layer, and removing the temporary substrate;

Forming a driving electrode film layer on the side of the second semiconductor film layer away from the support layer;

The driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer, and the first semiconductor film layer are etched to form the plurality of light emitting units and the plurality of driving electrodes.

Description of the drawings

FIG. 1 is a schematic structural diagram of a micron light-emitting diode device provided by an embodiment of the application;

Fig. 2 is a schematic diagram of an enlarged structure of the S1 area in Fig. 1;

FIG. 3 is a schematic structural diagram of another superstructure unit provided by an embodiment of the application;

4 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application;

Fig. 5 is a schematic diagram of an enlarged structure of the S2 area in Fig. 4;

6 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application;

FIG. 7 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application;

FIG. 8 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application;

Fig. 9 is a schematic diagram of an enlarged structure of the S3 area in Fig. 8;

10 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application;

FIG. 11 is a schematic diagram of the structure of a micron light-emitting diode device without a superstructure unit;

FIG. 12 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application;

FIG. 13 is a schematic structural diagram of a display panel provided by an embodiment of the application;

FIG. 14 is a schematic structural diagram of a display panel provided by an embodiment of the application;

15 is a schematic structural diagram of a display panel provided by an embodiment of the application;

FIG. 16 is a schematic structural diagram of another display panel provided by an embodiment of the application;

FIG. 17 is a schematic diagram of a three-dimensional structure of the display panel shown in FIG. 16;

FIG. 18 is a schematic structural diagram of a vector pixel provided by an embodiment of this application;

FIG. 19 is a schematic diagram of the structure of a wafer provided by an embodiment of the application;

FIG. 20 is a flowchart of a manufacturing method of a micron light-emitting diode device according to an embodiment of the application;

FIG. 21 is a flowchart of another method for manufacturing a micron light-emitting diode device according to an embodiment of the application;

FIG. 22 is a detailed step flowchart of step S202 in FIG. 21;

Figures 23-27 are schematic diagrams of the manufacturing process of a micron light-emitting diode device provided by an embodiment of the application;

FIG. 28 is a flowchart of another method for manufacturing a micron light-emitting diode device according to an embodiment of the application;

FIG. 29 is a detailed step flowchart of step S302 in FIG. 28;

30-37 are schematic diagrams of the manufacturing process of another micron light-emitting diode device provided by an embodiment of the application;

38-41 are schematic diagrams of a part of the manufacturing process of another micron light-emitting diode device provided by an embodiment of the application;

FIG. 42 is a flowchart of another method for manufacturing a micron light-emitting diode device according to an embodiment of the application;

43-FIG. 50 are schematic diagrams of the manufacturing process of another micron light-emitting diode device provided by an embodiment of the application;

FIG. 51 is a flowchart of another method for manufacturing a micron light-emitting diode device according to an embodiment of the application;

52-59 are schematic diagrams of the manufacturing process of another micron light-emitting diode device provided by an embodiment of the application.

Detailed ways

The application will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described here are only used to explain the application, but not to limit the application. In addition, it should be noted that, for ease of description, the drawings only show a part of the structure related to the present application instead of all of the structure.

FIG. 1 is a schematic structural diagram of a micron light-emitting diode device provided by an embodiment of the application, and FIG. 2 is a schematic diagram of an enlarged structure of the S1 area in FIG. A micron light-emitting diode device includes a common electrode layer 20, a plurality of light-emitting units 30, a plurality of driving electrodes 40, and at least one superstructure layer (a superstructure layer is exemplarily shown in FIG. 1). The light emitting unit 30 includes a first semiconductor layer 31, a second semiconductor layer 33, and a multiple quantum well layer 32 located between the first semiconductor layer 31 and the second semiconductor layer 33. The common electrode layer 20 is in the shape of a grid. The grid of the common electrode layer 20 surrounds the grid to form a plurality of first openings 21. The vertical projection of is located in the vertical projection of the first opening 21 on the plane where the first semiconductor layer 31 is located. The common electrode layer 20 is electrically connected to the first semiconductor layer 31. The driving electrode 40 is located on the side of the second semiconductor layer 33 away from the multiple quantum well layer 32, and the driving electrode 40 is electrically connected to the second semiconductor layer 33. The meta-structure layer is located on the light-emitting display side of the light-emitting unit 30, and each meta-structure layer includes a plurality of meta-structure units 50. The first opening 21 exposes the super structure unit 50, that is, the vertical projection of the super structure unit 50 on the plane where the first semiconductor layer 31 is located is within the vertical projection of the first opening 21 on the plane where the first semiconductor layer 31 is located. The super structure unit 50 in the same meta structure layer corresponds to the light emitting unit 30 one-to-one, and the super structure unit 50 is provided with a plurality of recessed structures or a plurality of raised structures (exemplarily, a plurality of recessed structures are shown in FIG. 1 and FIG. Take an example for explanation), which is used to change the light intensity distribution characteristics of the light rays. The light intensity distribution characteristics include the light divergence angle and the deflection direction of the chief ray.

In the micron light emitting diode device provided by the embodiment of the present application, the common electrode layer 20 may be composed of a metal mesh. The superstructure layer is a layered structure with a specific etching pattern. The superstructure layer includes a plurality of superstructure units 50. The superstructure unit 50 adjusts the light emitting angle and direction of the light emitting unit 30 to achieve ultra-high luminous brightness It emits at a small angle with the emitted light, which improves the light utilization rate. In an embodiment, different superstructure units 50 can make different light-emitting units 30 have different light-emitting angles and light-emitting directions, so as to realize individual control of the light-emitting angles and light-emitting directions of different light-emitting units 30. Among them, the light exit angle refers to the emission angle.

FIG. 3 is a schematic structural diagram of another superstructure unit provided by an embodiment of the application. Referring to FIG. 3, the superstructure unit 50 is provided with a plurality of protrusion structures. The plurality of protrusion structures includes a plurality of cylindrical protrusions. In the same meta-layer, all raised structures have the same height. In the same superstructure layer, the convex structures in different superstructure units 50 have different diameters, so that different superstructure units 50 have different surface shapes, so as to realize independent control of the light-emitting angle and light-emitting direction of different light-emitting units 30 . In the embodiment of the present application, all the cylindrical protrusions are set to have the same height, thereby facilitating the integration of the super structure unit 50 with other structural components, and preventing the super structure unit 50 from causing problems such as warping. It should be noted that due to the limitation of the processing technology, the convex structure formed in the actual product is not a standard cylinder, and may have a certain conicity, that is, a truncated cone shape is formed.

Optionally, referring to FIG. 3, the height of the cylindrical protrusion is H1, and the height of the cylindrical protrusion is greater than or equal to 800 nm and less than or equal to 1000 nm, that is, 800 nm≦H1≦1000 nm. The diameter of the cylindrical protrusion is H2, and the diameter of the cylindrical protrusion is greater than or equal to 100 nm and less than or equal to 300 nm, that is, 100 nm ≤ H2 ≤ 300 nm.

Exemplarily, a sub-wavelength diameter concave structure or a convex structure can be etched within a diameter range on the order of a wavelength, and a structure with a depth of hundreds of nanometers can be etched to form a superstructure layer (including the superstructure unit 50). The metastructure layer (including the metastructure unit 50) can be made of materials with high refractive index, good conductivity, and easy bonding with GaN (ie, gallium nitride). In one embodiment, it can also be made of materials that are easy to manufacture, transparent, Made of materials with good flatness and other characteristics.

Optionally, referring to FIG. 1, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. In the direction perpendicular to the plane where the first semiconductor layer 31 is located, the thickness of the N-type gallium nitride layer is greater than the thickness of the P-type gallium nitride layer, that is, the thickness of the first semiconductor layer 31 is greater than the thickness of the second semiconductor layer 33.

Optionally, referring to FIG. 1, the surface of the first semiconductor layer 31 on the side away from the multiple quantum well layer 32 is etched to form a superstructure layer. The meta-structure unit 50 in the meta-structure layer is provided with a plurality of concave structures or a plurality of convex structures to change the light intensity distribution characteristics of the light rays. The light intensity distribution characteristics include the light divergence angle and the deflection direction of the chief ray. In the embodiment of the present application, the first semiconductor layer 31 is etched to form a superstructure layer on the side of the first semiconductor layer 31 away from the multiple quantum well layer 32, which is equivalent to multiplexing the first semiconductor layer 31 as a superstructure layer. The superstructure layer multiplexes the original film layer (the first semiconductor layer 31), does not increase the thickness of the micron light-emitting diode, and realizes independent control of the light-emitting angle and light-emitting direction of different light-emitting units 30.

Optionally, referring to FIG. 1, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. The first semiconductor layers 31 of the plurality of light emitting units 30 are connected to each other as a whole. In other words, the multiple quantum well layer 32 and the second semiconductor layer 33 of the plurality of light-emitting units 30 are jointly formed on one first semiconductor layer 31. The common electrode layer 20 is located on the surface of the first semiconductor layer 31 adjacent to the multiple quantum well layer 32. In the embodiment of the present application, the common electrode layer 20, the multiple quantum well layer 32, the second semiconductor layer 33, and the driving electrode 40 are located on the same side of the first semiconductor layer 31, which is equivalent to multiplexing the first semiconductor layer 31 as a substrate, thereby There is no need to set up a special substrate, and the thickness of the micron light-emitting diode is reduced.

Optionally, referring to FIG. 1, a plurality of first grooves 111 are provided on the side of the first semiconductor layer 31 adjacent to the multiple quantum well layer 32, and the common electrode layer 20 is located in the first groove 111. In the embodiment of the present application, a plurality of first grooves 111 are provided on the side of the first semiconductor layer 31 adjacent to the multiple quantum well layer 32, and the first grooves 111 are located between two adjacent light-emitting units 30, and the first semiconductor layer 31 The first groove 111 is etched to avoid adhesion of the multiple quantum well layers 32 in two adjacent light-emitting units 30, and to ensure that the adjacent multiple quantum well layers 32 can be completely cut and separated.

Exemplarily, referring to FIG. 1, the common electrode layer 20 further includes a common terminal 311.

FIG. 4 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application. FIG. 5 is an enlarged structure diagram of the S2 area in FIG. One buffer layer 11) is shown schematically, and at least one buffer layer 11 is located on the side of the first semiconductor layer 31 away from the multiple quantum well layer 32. The surface of the at least one buffer layer 11 adjacent to the multiple quantum well layer 32 is etched to form a superstructure layer. The meta-structure unit 50 in the meta-structure layer is provided with a plurality of concave structures or a plurality of convex structures to change the light intensity distribution characteristics of the light rays. The light intensity distribution characteristics include the light divergence angle and the deflection direction of the chief ray. In the embodiment of the present application, at least one buffer layer 11 is etched to form at least one meta-layer on the side of the at least one buffer layer 11 away from the multiple quantum well layer 32. For example, one buffer layer 11 is etched to form a meta-layer. Alternatively, two buffer layers 11 are etched to form two meta-layers, or only one buffer layer 11 of the two buffer layers 11 is etched to form one meta-layer. It is equivalent to multiplexing at least one buffer layer 11 into a superstructure layer. Since the superstructure layer reuses the original film layer (buffer layer 11), the thickness of the micron light-emitting diode is not increased, and the light-emitting angle of different light-emitting units 30 is realized , Individual control of light direction. In one embodiment, since in the manufacturing process of the micron light-emitting diode device, the side of the buffer layer 11 provided with the superstructure layer needs to be bonded to the light-emitting unit film layer, the light-emitting unit film layer is the whole before patterning. Therefore, the superstructure layer is etched and formed on at least one buffer layer 11. During the bonding process, alignment is not required, the alignment process is omitted, and the process flow is simplified.

Optionally, referring to FIG. 4, the micron light emitting diode device further includes at least one buffer layer 11, and the at least one buffer layer 11 is located on the side of the first semiconductor layer 31 away from the multiple quantum well layer 32. The buffer layer 11 in contact with the first semiconductor layer 31 is provided with a plurality of second grooves 112 on the side adjacent to the multiple quantum well layer 32, that is, the buffer layer 11 closest to the multiple quantum well layer 32 is adjacent to the multiple quantum well layer 32. A plurality of second grooves 112 are provided on one side of the well layer 32. The common electrode layer 20 is located in the plurality of second grooves 112. In the direction perpendicular to the buffer layer 11, the thickness of the common electrode layer 20 is smaller than the depth of the second groove. Since in the manufacturing process of the micron light-emitting diode device, the buffer layer 11 provided with the superstructure layer and the light-emitting unit film layer need to be bonded together, in the embodiment of the present application, the common electrode layer 20 is located in the plurality of second grooves 112 The thickness of the common electrode layer 20 is less than the depth of the second groove 112, so that during the bonding process, the common electrode layer 20 will not contact the light-emitting unit film layer, and the common electrode layer 20 will not adversely affect the bonding. It also provides a margin for pressure deformation of the buffer layer 11. Even if the buffer layer 11 is deformed under pressure, the common electrode layer 20 will not contact the light-emitting unit film layer, and the common electrode layer 20 will not adversely affect the bonding. , To ensure the quality of the bonding.

Optionally, referring to FIG. 4, the distance between the edges of any two first semiconductor layers 31 is greater than zero. That is, any two first semiconductor layers 31 are independent of each other, any two first semiconductor layers 31 are not connected, any two first semiconductor layers 31 are not in contact, and a plurality of first semiconductor layers 31 are discretely distributed. Therefore, a continuous optical waveguide is not formed, and light crosstalk between adjacent light-emitting units 30 is avoided.

Optionally, referring to FIG. 4, the micron light emitting diode device further includes a support layer 10, and the support layer 10 is located on the side of at least one buffer layer 11 away from the multiple quantum well layer 32. The common electrode layer 20, the plurality of light-emitting units 30, the plurality of driving electrodes 40, at least one meta-layer and at least one buffer layer 11 are located on the same side of the support layer 10.

Exemplarily, referring to FIG. 4, the support layer 10 may be a transparent protective layer, and the support layer 10 may include a sapphire material. The buffer layer 11 may include a gallium nitride material and an N-type gallium nitride material. That is, the gallium nitride material is grown on the support layer 10 of sapphire material, and then an N-type gallium nitride material is grown on the film layer formed of the gallium nitride material. Before growing the N-type GaN material, Mr. Long grows the GaN material. The N-type GaN material is grown on the GaN material. Due to the lattice matching of the GaN material and the N-type GaN material, it is helpful to prevent Lattice defects of N-type gallium nitride materials.

6 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application. Referring to FIG. 6, the micron light-emitting diode device includes a support layer 10, a common electrode layer 20, a plurality of light-emitting units 30, a plurality of driving electrodes 40, and Multiple superstructure layers (two superstructure layers are exemplarily shown in FIG. 6). The micron light emitting diode device also includes a plurality of buffer layers 11 (two buffer layers 11 are exemplarily shown in FIG. 6). The surface of each buffer layer 11 away from the support layer 10 is etched to form a superstructure layer, and each superstructure layer includes a plurality of superstructure units 50. In the embodiment of the present application, the multi-layer superstructure layer can control the divergence angle and the deflection direction of the light beam, so as to achieve a smaller divergence angle and higher light output brightness.

Exemplarily, referring to FIG. 6, a plurality of different buffer layers 11 may be made of gallium nitride material, or other materials capable of bonding with gallium nitride material. The thickness of different superstructure layers can be the same or different. The heights of the raised structures in two different superstructure layers can be the same or different (all the raised structures in the same superstructure layer have the same height).

In the above-mentioned embodiment, "the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode" as an example for explanation. illustrate. In other embodiments, it may also be that the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, and the driving electrode 40 is a cathode. In the application, the material types of the first semiconductor layer 31 and the second semiconductor layer 33 can also be determined according to product requirements.

FIG. 7 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application. Referring to FIG. 7, the micron light-emitting diode device includes a common electrode layer 20, a plurality of light-emitting units 30, a plurality of driving electrodes 40, and at least one superstructure Layer (a superstructure layer is exemplarily shown in FIG. 7). The meta-structure layer is located on the light-emitting display side of the light-emitting unit 30, and each meta-structure layer includes a plurality of meta-structure units 50. The micron light emitting diode device further includes at least one buffer layer 11 (one buffer layer 11 is exemplarily shown in FIG. 7), and the at least one buffer layer 11 is located on the side of the first semiconductor layer 31 away from the multiple quantum well layer 32. The surface of the at least one buffer layer 11 adjacent to the multiple quantum well layer 32 is etched to form a superstructure layer.

Exemplarily, referring to FIG. 7, the micron light emitting diode device further includes a support layer 10, and the support layer 10 is located on the side of at least one buffer layer 11 away from the multiple quantum well layer 32. The buffer layer 11 may include a gallium nitride material and a P-type gallium nitride material. That is, the gallium nitride material is grown on the support layer 10 of sapphire material, and then the p-type gallium nitride material is grown on the film layer formed of the gallium nitride material. Before growing the P-type gallium nitride material, Mr. grows the gallium nitride material. The P-type gallium nitride material is grown on the gallium nitride material. Due to the lattice matching of the gallium nitride material and the P-type gallium nitride material, it is helpful to prevent Lattice defects of P-type gallium nitride materials.

FIG. 8 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application. FIG. 9 is an enlarged schematic diagram of the S3 area in FIG. 8. Referring to FIG. 8 and FIG. 9, the first semiconductor layer 31 is etched to The first semiconductor layer 31 forms a superstructure layer on the side away from the multiple quantum well layer 32, which is equivalent to multiplexing the first semiconductor layer 31 as a superstructure layer, because the superstructure layer multiplexes the original film layer (the first semiconductor layer 31 ), the thickness of the micron light-emitting diode is not increased, and the light-emitting angle and light-emitting direction of different light-emitting units 30 are individually controlled.

FIG. 10 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application. Referring to FIG. 10, the micron light-emitting diode device includes a plurality of buffer layers 11 (two buffer layers 11 are exemplarily shown in FIG. 10) . The surface of each buffer layer 11 away from the support layer 10 is etched to form a superstructure layer, and each superstructure layer includes a plurality of superstructure units 50. In the embodiment of the present application, the multi-layer superstructure layer can control the divergence angle and the deflection direction of the light beam, so as to achieve a smaller divergence angle and higher light output brightness.

Exemplarily, referring to FIGS. 7, 8 and 10, the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, and the driving electrode 40 For the cathode. In the direction perpendicular to the plane where the first semiconductor layer 31 is located, the thickness of the N-type gallium nitride layer is greater than the thickness of the P-type gallium nitride layer, that is, the thickness of the first semiconductor layer 31 is smaller than the thickness of the second semiconductor layer 33.

Current red light emitting diodes are prepared using gallium arsenide substrates, which have the disadvantage of absorbing light, which makes processing difficult. The use of blue light emitting diodes emitting blue light to illuminate the red light quantum dot film can solve the shortcomings of light absorption of the gallium arsenide substrate. FIG. 11 is a schematic diagram of the structure of a micron light-emitting diode device without a superstructure unit. Referring to FIG. 11, since the light emission distribution of the light-emitting unit 30 is a Lambertian distribution, the light emitted by the light-emitting unit 30 will cause adjacent light emission after passing through the quantum dot film 82 The optical crosstalk of the unit 30 reduces the display resolution.

FIG. 12 is a schematic structural diagram of another micron light-emitting diode device provided by an embodiment of the application. Referring to FIG. 12, the micron light-emitting diode device includes a superstructure unit 50, and the micron light-emitting diode device further includes a quantum dot film 82. The quantum dot film 82 is located The first semiconductor layer 31 is away from the side of the multiple quantum well layer 32. The side of the first semiconductor layer 31 away from the multiple quantum well layer 32 is the light emitting display side of the light emitting unit 30, and the quantum dot film 82 is located on the light emitting display side of the light emitting unit 30. Illustratively, when the buffer layer 11 is etched to form a superstructure layer, the quantum dot film 82 is located on the side of the superstructure unit 50 away from the light emitting unit 30. In the embodiment of the present application, since the superstructure unit 50 reduces the angle of light emitted by the light-emitting unit 30, the light divergence angle is small, so that the radiation area is within one pixel range (that is, the range where the light-emitting unit 30 is located), so the phase can be reduced. Crosstalk between adjacent light-emitting units 30.

Illustratively, in some feasible embodiments, the light emitting unit 30 emits blue light, the quantum dot film 82 includes a red light quantum dot film, and the light emitting unit 30 emits blue light and irradiates the red light quantum dot film to generate red light. Micron LED devices can realize red display. In other feasible embodiments, the light-emitting unit 30 emits blue light, and the quantum dot film 82 includes a red light quantum dot film and a green light quantum dot film. Light quantum dot film and green light quantum dot film. The light emitting unit 30 emits blue light to irradiate the red light quantum dot film to generate red light, and the light emitting unit 30 emits blue light to irradiate the green light quantum dot film to generate green light. The region of the quantum dot film 82 where the quantum dots are not injected can directly transmit blue light, so the micron light-emitting diode device can realize color display.

FIG. 13 is a schematic structural diagram of a display panel provided by an embodiment of the application, FIG. 14 is a schematic structural diagram of a display panel provided by an embodiment of the application, and FIG. 15 is a schematic structural diagram of a display panel provided by an embodiment of the application 13, 14 and 15, the display panel includes the micron light-emitting diode device in any embodiment, and further includes a driving chip 60. The driving chip 60 includes a first electrode 61 and a plurality of second electrodes 62. The first electrode 61 is electrically connected to the common electrode layer 20, for example, the first electrode 61 is electrically connected to the common terminal 311 of the common electrode layer 20. The second electrode 62 is electrically connected to the driving electrode 40 in a one-to-one correspondence.

Optionally, referring to FIG. 13, FIG. 14 and FIG. 15, the display panel further includes a glue layer 70, and the glue layer 70 is located between the driving chip 60 and the micron light emitting diode device. In the embodiment of the present application, the adhesive layer 70 is used for bonding, which can improve the bonding efficiency and realize direct bonding at the wafer level.

Optionally, referring to FIGS. 13, 14 and 15, the driving electrode 40 includes a first end surface and a second end surface, the first end surface is located between the second end surface and the light emitting unit 30, and the area of the first end surface is larger than that of the second end surface. Area, the first end surface and the second end surface are parallel to the first semiconductor layer 31, that is, the first end surface and the second end surface are parallel to the light emitting surface of the display panel. In the embodiment of the present application, the area of the first end surface is larger than the area of the second end surface, and the first end surface facing the glue layer 70 is relatively sharp. During the gluing process, the glue layer material around the driving electrode 40 is easier to be discharged to ensure The micron LED device and the driving chip 60 can be better bonded.

Exemplarily, referring to FIGS. 13, 14 and 15, the driving chip 60 further includes a driving substrate 63, and the first electrode 61 and the plurality of second electrodes 62 are located on the side of the driving substrate 63 facing the light-emitting unit 30.

Exemplarily, referring to FIGS. 13, 14 and 15, the driving electrode 40 is a metal layer, which serves as the driving electrode of the light-emitting unit 30 and is bonded to the second electrode 62 of the driving chip 60. The driving electrode 40 may have a light-reflecting effect to reflect the light emitted by the light-emitting unit 30 to the direction of the light-emitting surface. For example, the driving electrode 40 may be made of a highly reflective aluminum material.

It should be noted that in the micron light-emitting diode devices of the display panel shown in FIG. 13, FIG. 14, and FIG. Gallium layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode" as an example for explanation. In other embodiments, it may also be that the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, and the driving electrode 40 is a cathode. In the application, the material types of the first semiconductor layer 31 and the second semiconductor layer 33 can also be determined according to product requirements.

16 is a schematic structural diagram of another display panel provided by an embodiment of the application, and FIG. 17 is a three-dimensional structural schematic diagram of the display panel shown in FIG. 16. Referring to FIGS. 16 and 17, the driving chip 60 includes a microelectromechanical device, The device is used to move in the horizontal direction (X direction) and vertical direction (Y direction), and drive the driving chip 60 to scan in the horizontal and vertical directions. Since the multiple light-emitting units 30 and the driving chip 60 are rigidly fixed, , The micro-electromechanical device drives a plurality of light-emitting units 30 to scan in the horizontal direction and the vertical direction. The horizontal direction is perpendicular to the vertical direction, and the horizontal direction and the vertical direction are parallel to the plane where the multiple light-emitting units 30 are located. The display panel further includes a light-shielding layer 81 which is located on the light-emitting display side of the light-emitting unit 30. Illustratively, the light shielding layer 81 is located on the side of the support layer 10 away from the light emitting unit 30. The light shielding layer 81 includes a plurality of second openings 811. The second opening 811 corresponds to the first opening 21 one-to-one, and the area of the second opening 811 is smaller than the area of the first opening 21. In other words, the vertical projection of the second opening 811 on the plane where the first semiconductor layer 31 is located is within the vertical projection of the first opening 21 on the plane where the first semiconductor layer 31 is located. In the embodiment of the present application, based on the meta-structure layer (including a plurality of meta-structure units 50), a light-shielding layer 81 is provided on the light-emitting side of the light-emitting unit 30. The light-shielding layer 81 includes a plurality of second openings 811, and the second opening 811 is compared with The first opening 21 has a smaller size, and combined with the micro-electromechanical device (ie MEMS micro-vibration system) in the driving chip 60, a higher resolution display effect can be achieved.

Exemplarily, referring to FIGS. 16 and 17, the light shielding layer 81 is grown on the side of the support layer 10 away from the light emitting unit 30. Since the processing line width of the metal can reach the nanometer level, metal can be selected as the material for forming the light shielding layer 81. A micron-level window smaller than the original pixel size is made on the light shielding layer 81 to allow only light within the range of the second opening 811 to pass through, thereby obtaining a smaller pixel size. As shown in Figure 17, the microelectromechanical device can make two-dimensional vibrations in a plane determined by the horizontal and vertical directions, thereby driving the light-emitting unit array (including multiple arrays of light-emitting units 30) to perform in the X and Y directions. Scan display. When the light emitting unit 30 is refreshed at a higher rate, time-sharing display can be realized, and a higher resolution than the original resolution can be obtained. For example, the size H3 of the pixel P1 (ie, the light-emitting unit 30) in the horizontal direction is 2um. When the microelectromechanical device moves 20 μm in the horizontal direction, one pixel is scanned in the horizontal direction, and 10 pixel points can be displayed in time division. Among them, the 10 pixels include 1 original pixel P1 and 9 scanned pixels P2 obtained by scanning.

FIG. 18 is a schematic structural diagram of a vector pixel provided by an embodiment of the application. Referring to FIG. 18, the vector pixel includes the micron light-emitting diode device in any embodiment of the application, and the vector pixel also includes an imaging projection lens 83 and an imaging projection lens 83 It is located on the side of the support layer 10 away from the light-emitting unit 30. In the embodiment of the present application, the light emitting unit array (including multiple light emitting units 30 arranged in an array) is combined with the imaging projection lens 83 to control the light emitting direction of the light emitting unit array to form light emitted from different directions. Different light-emitting units 30 have different light-emitting directions, that is, a pixel can have a single light-emitting direction, so it is called a vector pixel. When designing the vector pixel device, deflecting the narrow beam is beneficial for the narrow beam of the edge pixels to enter the imaging projection lens 83, otherwise the edge pixels cannot be imaged by the imaging projection lens 83.

FIG. 19 is a schematic diagram of the structure of a wafer provided by an embodiment of the application. Referring to FIG. 19, multiple micron light-emitting diode devices in the above-mentioned embodiment can be formed on the same wafer 100 at the same time, and form independent wafers through a cutting process. Micron light emitting diode device 200.

FIG. 20 is a flowchart of a method for manufacturing a micron light-emitting diode device according to an embodiment of the application. Referring to FIGS. 1 and 20, the method for manufacturing a micron light-emitting diode device includes:

S101. Provide a support layer 10.

S102, forming a common electrode layer 20, a plurality of light-emitting units 30, and a plurality of driving electrodes 40 on one side of the support layer 10, and forming at least one meta-layer on the light-emitting display side of the light-emitting unit 30;

The light emitting unit 30 includes a first semiconductor layer 31, a second semiconductor layer 33, and a multiple quantum well layer 32 located between the first semiconductor layer 31 and the second semiconductor layer 33. The common electrode layer 20 has a grid shape. The grid of the common electrode layer 20 surrounds the grid to form a plurality of first openings 21, and the first openings 21 expose the light-emitting unit 30. The common electrode layer 20 is electrically connected to the first semiconductor layer 31. The driving electrode 40 is located on the side of the second semiconductor layer 33 away from the multiple quantum well layer 32, and the driving electrode 40 is electrically connected to the second semiconductor layer 33. Each superstructure layer includes a plurality of superstructure units 50, the first opening 21 exposes the superstructure unit 50, the superstructure unit 50 in the same superstructure layer corresponds to the light emitting unit 30 one-to-one, and the superstructure unit 50 is provided with multiple The concave structure or multiple convex structures are used to change the light intensity distribution characteristics of the light rays, and the light intensity distribution characteristics include the light divergence angle and the deflection direction of the chief ray.

The manufacturing method of the micron light-emitting diode device provided by the embodiment of the present application is used to form the micron light-emitting diode device in the foregoing embodiment. The meta-structure layer formed on the display light-emitting side of the light-emitting unit 30 is a layered structure with a specific etching pattern. The meta-structure layer includes a plurality of meta-units 50. Adjust to achieve ultra-high luminous brightness and small-angle emission of the emitted light, which improves the light utilization rate. In an embodiment, different superstructure units 50 can make different light-emitting units 30 have different light-emitting angles and light-emitting directions, so as to realize individual control of the light-emitting angles and light-emitting directions of different light-emitting units 30. Among them, the light exit angle refers to the emission angle.

FIG. 21 is a flowchart of another method for manufacturing a micron light-emitting diode device according to an embodiment of the application, FIG. 22 is a detailed step flowchart of step S202 in FIG. 21, and FIG. 23-27 are a flowchart provided by an embodiment of the application. A schematic diagram of the manufacturing process of a micron light-emitting diode device. The embodiment of the present application is to form a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes on one side of the support layer, and at least one superstructure is formed on the light-emitting display side of the light-emitting unit. The layer modification, referring to Figure 1 and Figure 21-27, the manufacturing method of the micron light-emitting diode device includes:

S201. Provide a support layer 10.

S202, forming a plurality of light emitting units 30 on one side of the supporting layer 10.

S203, forming a common electrode layer 20 on the first semiconductor layer 31 between two adjacent light emitting units 30, and forming a driving electrode 40 on the side of the light emitting unit 30 away from the support layer.

Optionally, in some feasible embodiments, the common electrode layer 20 is first formed on the first semiconductor layer 31 between two adjacent light-emitting units 30, and then the driving electrode 40 is formed on the side of the light-emitting unit 30 away from the support layer. . In other feasible embodiments, the driving electrode 40 is first formed on the side of the light emitting unit 30 away from the support layer, and then the common electrode layer 20 is formed on the first semiconductor layer 31 between two adjacent light emitting units 30. In other feasible embodiments, a common electrode layer 20 may be formed on the first semiconductor layer 31 between two adjacent light-emitting units 30, and a driving electrode 40 may be formed on the side of the light-emitting unit 30 away from the support layer.

S204: Turn the side of the support layer 10 provided with the light-emitting unit 30 to the temporary substrate 90, and remove the support layer 10.

S205, etching the surface of the first semiconductor layer 31 away from the multi-quantum well layer 32 to form a superstructure layer.

Exemplarily, after step S205, it may further include: forming independent micron light-emitting diode devices 200 by cutting the multiple micron light-emitting diode devices 200 formed on the same chip 100 (that is, the process of splitting). And it may also include: assembling the micron light-emitting diode device and the driving chip 60 to form a display panel.

It should be noted that the temporary substrate 90 in step S204 can be removed after step S205, that is, after etching the surface of the first semiconductor layer 31 away from the multiple quantum well layer 32 to form a superstructure layer, the temporary substrate 90 is removed.基片90。 Substrate 90.

Optionally, referring to FIG. 1 and FIGS. 22-27, forming a plurality of light-emitting units 30 on one side of the support layer 10 (step S202) includes:

S2021, forming a first semiconductor film layer 310, a multiple quantum well film layer 320, and a second semiconductor film layer 330 on one side of the support layer 10 in sequence.

Exemplarily, the first semiconductor film layer 310 includes N-type gallium nitride, and the second semiconductor film layer 330 includes P-type gallium nitride. The thickness of the first semiconductor film layer 310 is greater than the thickness of the second semiconductor film layer 330.

S2022, the second semiconductor film layer 330, the multiple quantum well film layer 320 and a part of the first semiconductor film layer 310 are etched to form a plurality of light emitting units 30.

In this step, for example, exposure, development, and etching can be used to etch the second semiconductor film layer 330, the multiple quantum well film layer 320, and a part of the first semiconductor film layer 310. After the second semiconductor film layer 330 is etched, a plurality of separated second semiconductor layers 33 can be formed. After the multiple quantum well film layer 320 is etched, a plurality of separated multiple quantum well layers 32 can be formed. After the partial etching of 310, the formed first semiconductor layer 31 can also be a whole, and only the first semiconductor layer 31 is etched to form a plurality of first grooves 111. That is, the first semiconductor layers 31 of the plurality of light-emitting units 30 are connected to each other as a whole, and the first semiconductor layer 31 is provided with a plurality of first grooves 111 on the side adjacent to the multiple quantum well layer 32. The common electrode layer 20 may be located in the first groove 111.

FIG. 28 is a flowchart of another method for manufacturing a micron light-emitting diode device according to an embodiment of the application, FIG. 29 is a detailed step flowchart of step S302 in FIG. 28, and FIG. 30-FIG. 37 are another example provided by this application. A schematic diagram of the manufacturing process of a micron light-emitting diode device. The embodiment of the present application is to form a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes on one side of the support layer, and at least one super-electrode layer is formed on the light-emitting display side of the light-emitting unit. For the modification of the structure layer, referring to Fig. 4 and Fig. 28-Fig. 37, the manufacturing method of the micron light-emitting diode device includes:

S301. Provide a supporting layer 10.

S302, forming at least one buffer layer 11 on one side of the supporting layer 10, and etching the surface of the at least one buffer layer 11 away from the supporting layer 10 to form at least one meta-layer.

Illustratively, in the schematic diagrams of the manufacturing process of FIGS. 30-37, a buffer layer 11 is taken as an example for explanation.

S303, etch the surface of the buffer layer 11 furthest from the support layer 10 to form a plurality of second grooves 112, and form a common electrode layer 20 in the second grooves 112.

In this step, optionally, the thickness of the common electrode layer 20 is smaller than the depth of the second groove 112 in the direction perpendicular to the buffer layer 11.

S304, forming a second semiconductor film layer 330, a multiple quantum well film layer 320, and a first semiconductor film layer 310 on the temporary substrate 90 in sequence.

S305. Bond the side of the temporary substrate 90 with the first semiconductor film layer 310 to the side of the support layer 10 with the buffer layer 11, and remove the temporary substrate 90.

Exemplarily, referring to FIG. 36, after step S305, it may further include: designing openings, via depths and effective layers (the second semiconductor film layer 330, the multiple quantum well film layer 320, and the first semiconductor film layer 310) The thickness is uniform, that is, the common electrode layer 20 is exposed. Then grow metal posts in the vias until the vias are filled.

S306, forming a driving electrode film layer 400 on the side of the second semiconductor film layer 330 away from the support layer 10.

S307, etching the driving electrode film layer 400, the second semiconductor film layer 330, the multiple quantum well film layer 320 and the first semiconductor film layer 310 to form a plurality of light emitting units 30 and a plurality of driving electrodes 40.

In this step, after the second semiconductor film layer 330 is etched, multiple separated second semiconductor layers 33 can be formed, and after the multiple quantum well film 320 is etched, multiple separated multiple quantum well layers 32 can be formed. A semiconductor film layer 310 is etched to form a plurality of separated first semiconductor layers 31. The driving electrode film layer 400 is etched to form a plurality of separated driving electrodes 40.

Figures 38-41 are schematic diagrams of a part of the manufacturing process of another micron light-emitting diode device provided by an embodiment of the application. Two meta-layers are formed on one buffer layer as an example), referring to FIGS. 6 and 29-37, at least one buffer layer 11 is formed on one side of the support layer 10, and at least one buffer layer 11 is etched away from the support layer 10. At least one superstructure layer is formed on the surface of one side (step S302), including:

S3021, forming a buffer layer 11 on one side of the support layer 10, and etch the surface of the buffer layer 11 away from the support layer 10 to form a superstructure layer.

Exemplarily, for ease of description, the buffer layer 11 in this step is referred to as the first buffer layer, and the superstructure layer in this step is referred to as the first superstructure layer. In this step, the first buffer layer is etched to form a first superstructure layer on the first buffer layer.

S3022, forming a buffer layer 11 on the temporary substrate, bonding the side of the temporary substrate with the buffer layer 11 and the side of the supporting layer 10 with the buffer layer 11, and removing the temporary substrate.

Exemplarily, for ease of description, the buffer layer 11 formed on the temporary substrate in this step is referred to as the second buffer layer.

It should be noted that the temporary substrates in different embodiments of the present application may be different substrates. The temporary substrates in the same embodiment of the present application may be different substrates, or may be the same substrate. The role of the temporary substrate is: as a temporary substrate and provide temporary support. Only used in the manufacturing process, there is no temporary substrate in the final product formed. For example, in this step, a second buffer layer can be formed on the temporary substrate, and the second buffer layer can be bonded to the first buffer layer. After the bonding is completed, the temporary substrate can be removed.

S3023, etching the buffer layer 11 farthest from the support layer 10 to form a superstructure layer on the surface of the side away from the support layer 10.

Exemplarily, for ease of description, the superstructure layer formed on the second buffer layer in this step is referred to as the second superstructure layer.

S3024. Repeat the steps of forming a new buffer layer on the temporary substrate, bonding, and etching the buffer layer bonded to the support layer to form a new meta-layer, until a preset number of meta-layers are formed.

It can be understood that if the preset number of superstructure layers is three, steps S3022 and S3023 can be repeated, that is, a buffer layer 11 is formed on the temporary substrate. For ease of description, the buffer layer 11 It is called the third buffer layer, and the side of the temporary substrate provided with the third buffer layer is bonded to the side of the support layer 10 provided with the second buffer layer, and the temporary substrate is removed. Then, the surface of the third buffer layer away from the support layer 10 is etched to form a superstructure layer (that is, the third superstructure layer).

In the manufacturing method shown in FIGS. 28-41, at least one superstructure layer (including a plurality of superstructure units 50) is formed on at least one buffer layer 11, and then a plurality of second layers are formed on the outermost buffer layer 11. Two groove 112. In other embodiments, a plurality of second grooves 112 may be formed on one buffer layer 11 first, and then a superstructure layer is formed on the buffer layer 11. FIG. 42 is a flowchart of another method for manufacturing a micron light-emitting diode device provided by an embodiment of the application, and FIGS. 43-FIG. 50 are schematic diagrams of a manufacturing process of another micron light-emitting diode device provided by an embodiment of the application. To modify the formation of a common electrode layer, multiple light-emitting units, and multiple driving electrodes on one side of the support layer, and the formation of at least one superstructure layer on the light-emitting display side of the light-emitting unit, refer to FIG. 4 and FIGS. 42-50 , The manufacturing method of the micron light-emitting diode device includes:

S401. Provide a supporting layer 10.

S402, forming a buffer layer 11 on one side of the supporting layer 10, etching the surface of the buffer layer 11 away from the supporting layer 10 to form a plurality of second grooves 112, and forming a common electrode layer 20 in the second grooves 112.

In this step, optionally, the thickness of the common electrode layer 20 is smaller than the depth of the second groove 112 in the direction perpendicular to the buffer layer 11.

S403, etching the surface of the buffer layer 11 away from the support layer 10 to form a superstructure layer.

S404, sequentially forming a second semiconductor film layer 330, a multiple quantum well film layer 320, and a first semiconductor film layer 310 on the temporary substrate 90.

S405. Bond the side of the temporary substrate 90 provided with the first semiconductor film layer 310 to the side of the support layer 10 provided with the buffer layer 11, and remove the temporary substrate 90.

S406, forming a driving electrode film layer 400 on the side of the second semiconductor film layer 330 away from the support layer 10.

S407, etching the driving electrode film layer 400, the second semiconductor film layer 330, the multiple quantum well film layer 320 and the first semiconductor film layer 310 to form a plurality of light emitting units 30 and a plurality of driving electrodes 40.

FIG. 51 is a flow chart of another method for manufacturing a micron light-emitting diode device provided by an embodiment of the application, and FIGS. 52-59 are schematic diagrams of a manufacturing process of another micron light-emitting diode device provided by an embodiment of the application. In order to modify the formation of a common electrode layer, a plurality of light-emitting units and a plurality of driving electrodes on one side of the support layer, and the formation of at least one superstructure layer on the light-emitting display side of the light-emitting unit, refer to FIG. 8 and FIGS. 51-59 , The manufacturing method of the micron light-emitting diode device includes:

S501. Provide a support layer 10. S502, forming a buffer layer 11 on one side of the supporting layer 10, etching the surface of the buffer layer 11 away from the supporting layer to form a plurality of second grooves 112, and forming a common electrode layer 20 in the second grooves 112.

S503, forming a second semiconductor film layer 330, a multiple quantum well film layer 320, and a first semiconductor film layer 310 on the temporary substrate 90 in sequence.

Exemplarily, the first semiconductor film layer 310 includes P-type gallium nitride, and the second semiconductor film layer 330 includes N-type gallium nitride. The thickness of the first semiconductor film layer 310 is smaller than the thickness of the second semiconductor film layer 330.

S504, etching the surface of the first semiconductor film layer 310 away from the temporary substrate 90 to form a superstructure layer.

S505, bonding the side of the temporary substrate 90 provided with the first semiconductor film layer 310 to the side of the supporting layer 10 provided with the buffer layer 11, and removing the temporary substrate 90.

S506, forming a driving electrode film layer 400 on the side of the second semiconductor film layer 330 away from the support layer 10.

S507, etching the driving electrode film 400, the second semiconductor film 330, the multiple quantum well film 320, and the first semiconductor film 310 to form a plurality of light emitting units 30 and a plurality of driving electrodes 40.

Optionally, in the foregoing embodiments, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. Alternatively, the first semiconductor layer 31 includes a P-type gallium nitride layer, and the second semiconductor layer 33 includes an N-type gallium nitride layer. The common electrode layer 20 is an anode, and the driving electrode 40 is a cathode.

Claims (20)

1. A light emitting diode device includes:

   A plurality of light emitting units, each of the light emitting units includes a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer located between the first semiconductor layer and the second semiconductor layer;

   The common electrode layer is in a grid shape. The grid of the common electrode layer surrounds the grid to form a plurality of first openings, and the first openings expose the light-emitting unit; the common electrode layer and the first semiconductor layer are electrically connected to each other. connect;

   A plurality of driving electrodes, the driving electrodes are located on a side of the second semiconductor layer away from the multiple quantum well layer, and the driving electrodes are electrically connected to the second semiconductor layer;

   At least one superstructure layer, the superstructure layer is located on the light emitting display side of the light-emitting unit; each of the superstructure layers includes a plurality of superstructure units, the first opening exposes the superstructure unit, and the same The super structure unit in the super structure layer corresponds to the light emitting unit one-to-one, each of the super structure unit is provided with a plurality of concave structures or a plurality of convex structures, and the super structure unit is configured to change the The light intensity distribution characteristics of the light emitted by the light-emitting unit, the light intensity distribution characteristics include the light divergence angle and the deflection direction of the chief ray.
2. The light emitting diode device of claim 1, wherein the surface of each of the first semiconductor layers away from the multiple quantum well layer is etched to form the superstructure layer.
3. The light emitting diode device according to claim 2, wherein each of the first semiconductor layers includes an N-type gallium nitride layer, each of the second semiconductor layers includes a P-type gallium nitride layer; The first semiconductor layers of the unit are connected to each other as a whole;

   The common electrode layer is located on the surface of the first semiconductor layer adjacent to the multiple quantum well layer.
4. 3. The light emitting diode device according to claim 3, wherein a first groove is provided on a side of the first semiconductor layer adjacent to the multiple quantum well layer, and the common electrode layer is located in the first groove.
5. The light emitting diode device according to claim 1, further comprising at least one buffer layer, the buffer layer being located on a side of the first semiconductor layer away from the multiple quantum well layer;

   The surface of at least one buffer layer adjacent to the multiple quantum well layer is etched to form the superstructure layer.
6. The light emitting diode device according to claim 1, further comprising at least one buffer layer, the buffer layer being located on a side of the first semiconductor layer away from the multiple quantum well layer;

   The buffer layer in contact with the first semiconductor layer is provided with a second groove on a side adjacent to the multiple quantum well layer, and the common electrode layer is located in the second groove;

   In a direction perpendicular to the buffer layer, the thickness of the common electrode layer is smaller than the depth of the second groove.
7. The light emitting diode device according to claim 6, wherein the distance between the edges of the first semiconductor layer of any two light emitting units is greater than zero.
8. 7. The light emitting diode device according to claim 6, further comprising a support layer located on a side of the at least one buffer layer away from the multiple quantum well layer.
9. The light emitting diode device according to claim 1, wherein each of the superstructure units is provided with a plurality of convex structures, and the plurality of convex structures includes a plurality of cylindrical protrusions;

   In the same superstructure layer, all the raised structures have the same height;

   In the same superstructure layer, the protrusion structures in different superstructure units have different diameters.
10. The light emitting diode device according to claim 1, further comprising a quantum dot film, the quantum dot film being located on a side of the first semiconductor layer away from the multiple quantum well layer.
11. A display panel, comprising the light-emitting diode device according to any one of claims 1-10; and

    A driving chip, the driving chip includes a first electrode and a plurality of second electrodes, the first electrode is electrically connected to the common electrode layer, and the plurality of second electrodes are in a one-to-one correspondence with the plurality of driving electrodes. connect.
12. 11. The display panel of claim 11, wherein each of the driving electrodes includes a first end surface and a second end surface, the first end surface is located between the second end surface and the light emitting unit, and each of the In the driving electrode, the area of the first end surface is larger than the area of the second end surface.
13. A method for manufacturing a light emitting diode device, including:

    Provide support layer;

    Forming a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one meta-layer on the light-emitting display side of the light-emitting unit;

    Wherein, each of the light-emitting units includes a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer located between the first semiconductor layer and the second semiconductor layer; the common electrode layer is a grid A plurality of first openings are formed around the grid of the common electrode layer, and the first openings expose the light-emitting unit; the common electrode layer is electrically connected to the first semiconductor layer; the driving electrode is located The second semiconductor layer is far away from the multiple quantum well layer, and the driving electrode is electrically connected to the second semiconductor layer; each of the meta-layers includes a plurality of meta-units, and the first opening Exposing the superstructure unit, the superstructure unit in the same superstructure layer corresponds to the light-emitting unit one-to-one, and each of the superstructure units is provided with a plurality of concave structures or a plurality of convex structures, The superstructure unit is configured to change the light intensity distribution characteristics of the light emitted by the light-emitting unit, and the light intensity distribution characteristics include the light divergence angle and the deflection direction of the chief ray.
14. The method of manufacturing a light-emitting diode device according to claim 13, wherein a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes are formed on one side of the support layer, and formed on the light-emitting display side of the light-emitting unit At least one superstructure layer, including:

    Forming the plurality of light-emitting units on one side of the supporting layer;

    Forming a common electrode layer on the first semiconductor layer between two adjacent light-emitting units, and forming a driving electrode on the side of the light-emitting unit away from the support layer;

    Flip the side of the support layer on which the light-emitting unit is provided onto the temporary substrate, and remove the support layer;

    Etching the surface of the first semiconductor layer away from the multiple quantum well layer to form the superstructure layer.
15. 14. The method of manufacturing a light emitting diode device according to claim 14, wherein forming the plurality of light emitting units on one side of the support layer comprises:

    Forming a first semiconductor film layer, a multiple quantum well film layer and a second semiconductor film layer in sequence on one side of the support layer;

    Etching the second semiconductor film layer, the multiple quantum well film layer and part of the first semiconductor film layer to form the plurality of light emitting units;

    Wherein, the first semiconductor layers of a plurality of the light-emitting units are connected to each other as a whole, the first semiconductor layer is provided with a first groove on the side adjacent to the multiple quantum well layer, and the common electrode layer is located in the The first groove.
16. The method of manufacturing a light-emitting diode device according to claim 13, wherein a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes are formed on one side of the support layer, and formed on the light-emitting display side of the light-emitting unit At least one superstructure layer, including:

    At least one buffer layer is formed on one side of the support layer, and at least one meta-layer is formed by etching the surface of at least one buffer layer on the side away from the support layer;

    Etching the surface of the buffer layer furthest from the support layer to form a second groove, and forming the common electrode layer in the second groove;

    Sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;

    Bonding the side of the temporary substrate provided with the first semiconductor film layer to the side of the supporting layer provided with the buffer layer, and removing the temporary substrate;

    Forming a driving electrode film layer on the side of the second semiconductor film layer away from the support layer;

    The driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer are etched to form the plurality of light emitting units and the plurality of driving electrodes.
17. The method of manufacturing a light emitting diode device according to claim 16, wherein at least one buffer layer is formed on one side of the support layer, and at least one surface of the buffer layer on the side away from the support layer is etched to form at least A superstructure layer, including:

    Forming a buffer layer on one side of the support layer, and etching the surface of the buffer layer away from the support layer to form a superstructure layer;

    A buffer layer is formed on the temporary substrate, and the side of the temporary substrate provided with the buffer layer is bonded to the side of the support layer provided with the buffer layer, and the temporary substrate is removed ；

    Etch the surface of the buffer layer farthest from the support layer on the side far from the support layer to form a superstructure layer;

    Repeat the steps of forming a new buffer layer on the temporary substrate, bonding, and etching the buffer layer bonded to the support layer to form a new meta-layer, until a predetermined number of the meta-layers are formed.
18. The method of manufacturing a light-emitting diode device according to claim 13, wherein a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes are formed on one side of the support layer, and formed on the light-emitting display side of the light-emitting unit At least one superstructure layer, including:

    Forming a buffer layer on one side of the support layer, etching the surface of the buffer layer away from the support layer to form a second groove, and forming the common electrode layer in the second groove;

    Etching the surface of the buffer layer away from the support layer to form a superstructure layer;

    Sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;

    Bonding the side of the temporary substrate provided with the first semiconductor film layer to the side of the supporting layer provided with the buffer layer, and removing the temporary substrate;

    Forming a driving electrode film layer on the side of the second semiconductor film layer away from the support layer;

    The driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer are etched to form the plurality of light emitting units and the plurality of driving electrodes.
19. The method for manufacturing a light emitting diode device according to claim 16 or 18, wherein in a direction perpendicular to the buffer layer, the thickness of the common electrode layer is smaller than the depth of the second groove.
20. The method of manufacturing a light-emitting diode device according to claim 13, wherein a common electrode layer, a plurality of light-emitting units, and a plurality of driving electrodes are formed on one side of the support layer, and formed on the light-emitting display side of the light-emitting unit At least one superstructure layer, including:

    Forming a buffer layer on one side of the support layer, etching the surface of the buffer layer away from the support layer to form a second groove, and forming the common electrode layer in the second groove;

    Sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;

    Etching the surface of the first semiconductor film layer away from the temporary substrate to form a superstructure layer;

    Bonding the side of the temporary substrate provided with the first semiconductor film layer to the side of the supporting layer provided with the buffer layer, and removing the temporary substrate;

    Forming a driving electrode film layer on the side of the second semiconductor film layer away from the support layer;

    The driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer, and the first semiconductor film layer are etched to form the plurality of light emitting units and the plurality of driving electrodes.

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