CN111403430A

CN111403430A - Micron light emitting diode device, manufacturing method thereof and display panel

Info

Publication number: CN111403430A
Application number: CN202010254643.4A
Authority: CN
Inventors: 卢增祥
Original assignee: Yixin Technology Development Co ltd
Current assignee: Yixin Technology Development Co ltd
Priority date: 2020-04-02
Filing date: 2020-04-02
Publication date: 2020-07-10
Anticipated expiration: 2040-04-02
Also published as: CN111403430B; WO2021196556A1

Abstract

The embodiment of the invention provides a micron light-emitting diode device, a manufacturing method thereof and a display panel, wherein the micron light-emitting diode device comprises the following components: a plurality of light emitting cells including a first semiconductor layer, a second semiconductor layer, and a multi-quantum well layer between the first semiconductor layer and the second semiconductor layer; the grid of the common electrode layer surrounds and forms a plurality of first openings, and the first openings expose the light-emitting units; the driving electrodes are positioned on one side, far away from the multiple quantum well layer, of the second semiconductor layer; at least one super-layer located on a light emitting display side of the light emitting unit; each super-structure layer comprises a plurality of super-structure units, the super-structure units are exposed out of the first openings and correspond to the light-emitting units one by one, and the super-structure units are provided with a plurality of concave structures or a plurality of convex structures and used for changing the light intensity distribution characteristics of emergent light.

Description

Micron light emitting diode device, manufacturing method thereof and display panel

Technical Field

The invention relates to a display technology, in particular to a micron light-emitting diode device, a manufacturing method thereof and a display panel.

Background

The micron light emitting diode device (micro) relates to the technology of thinning, miniaturizing and arraying L ED structure design, and the size of the micron light emitting diode device is generally in the micron level.

The micron light emitting diode device has the problem of efficiency reduction when the micron light emitting diode device is miniaturized. When the size is very small, the performance is affected by the sidewall effect related to surface and internal defects (such as open adhesion, contamination and structural damage), which lead to accelerated recombination of non-radiative carriers, greatly reducing the light emitting efficiency of the micro-led device, and to obtain higher light emitting brightness, the working current and the working voltage need to be increased, which brings great challenge to the heat dissipation of the micro-led device.

Disclosure of Invention

The embodiment of the invention provides a micron light-emitting diode device, a manufacturing method thereof and a display panel, so that ultrahigh light-emitting brightness and small-angle emergent light rays are realized, and the light utilization rate is improved.

In a first aspect, an embodiment of the present invention provides a micron light emitting diode device, including:

a plurality of light emitting cells including a first semiconductor layer, a second semiconductor layer, and a multi-quantum well layer between the first semiconductor layer and the second semiconductor layer;

the grid of the common electrode layer surrounds to form a plurality of first openings, and the first openings expose the light-emitting units; the common electrode layer is electrically connected with the first semiconductor layer;

the driving electrodes are positioned on one side, far away from the multiple quantum well layer, of the second semiconductor layer and are electrically connected with the second semiconductor layer;

at least one super-layer on a light emitting display side of the light emitting unit; each super layer includes a plurality of super units, first opening exposes super unit, super unit with the luminescence unit one-to-one, super unit is provided with a plurality of sunk structure or a plurality of protruding structure for change the light intensity distribution characteristic of light-emitting light, light intensity distribution characteristic include the light divergence angle, the direction of deflection of chief ray.

Optionally, the surface of the first semiconductor layer on the side far away from the multiple quantum well layer is etched to form the super-structure layer.

Optionally, the first semiconductor layer includes an N-type gallium nitride layer, and the second semiconductor layer includes a P-type gallium nitride layer; the first semiconductor layers of the plurality of light emitting units are connected with each other to form a whole;

the common electrode layer is located on the surface of the first semiconductor layer on the side close to the multiple quantum well layer.

Optionally, a plurality of first grooves are formed in the first semiconductor layer on a side close to the mqw layer, and the common electrode layer is located in the first grooves.

Optionally, the semiconductor device further comprises at least one buffer layer located on a side of the first semiconductor layer away from the multiple quantum well layer;

and etching the surface of one side of the at least one buffer layer, which is close to the multiple quantum well layer, to form the super-structure layer.

the buffer layer in contact with the first semiconductor layer is provided with a plurality of second grooves on one side close to the multiple quantum well layer, and the common electrode layer is positioned in the second grooves;

in the direction perpendicular to the buffer layer, the thickness of the common electrode layer is smaller than the depth of the second groove.

Optionally, a distance between any two edges of the first semiconductor layer is greater than 0.

Optionally, the multi-quantum well structure further comprises a support layer located on a side of the at least one buffer layer away from the multi-quantum well layer.

Optionally, the plurality of projection structures comprises a plurality of cylindrical projections;

in the same super-structure layer, all the raised structures have the same height;

in the same metamaterial layer, the protruding structures in different metamaterial units have different diameters.

Optionally, the quantum dot film is further included and is positioned on the side, away from the multiple quantum well layer, of the first semiconductor layer.

In a second aspect, an embodiment of the present invention provides a display panel, including the micro light emitting diode device of the first aspect;

and the driving chip comprises a first electrode and a plurality of second electrodes, the first electrode is electrically connected with the common electrode layer, and the plurality of second electrodes are electrically connected with the plurality of driving electrodes in a one-to-one correspondence manner.

Optionally, the driving electrode includes a first end surface and a second end surface, the first end surface is located between the second end surface and the light emitting unit, and an area of the first end surface is larger than an area of the second end surface.

In a third aspect, an embodiment of the present invention provides a method for manufacturing a micron light emitting diode device, including:

providing a support layer;

forming a common electrode layer, a plurality of light emitting units and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-structure layer on the light emitting display side of the light emitting units;

wherein the light emitting unit includes a first semiconductor layer, a second semiconductor layer, and a multi-quantum well layer between the first semiconductor layer and the second semiconductor layer; the common electrode layer is in a grid shape, a plurality of first openings are formed in the grid of the common electrode layer in a surrounding mode, and the first openings are exposed out of the light emitting units; the common electrode layer is electrically connected with the first semiconductor layer; the driving electrode is positioned on one side, far away from the multi-quantum well layer, of the second semiconductor layer, and the driving electrode is electrically connected with the second semiconductor layer; each super layer includes a plurality of super units, first opening exposes super unit, super unit with the luminescence unit one-to-one, super unit is provided with a plurality of sunk structure or a plurality of protruding structure for change the light intensity distribution characteristic of light-emitting light, light intensity distribution characteristic include the light divergence angle, the direction of deflection of chief ray.

Optionally, forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-layer on a light emitting display side of the light emitting units, includes:

forming the plurality of light emitting cells at one side of the support layer;

forming a common electrode layer on the first semiconductor layer between two adjacent light-emitting units, and forming a driving electrode on one side of each light-emitting unit far away from the supporting layer;

turning the side, provided with the light-emitting units, of the supporting layer to an adjacent substrate, and removing the supporting layer;

and etching the surface of the first semiconductor layer far away from the side of the multi-quantum well layer to form the super-structure layer.

Optionally, forming the plurality of light emitting units on one side of the support layer includes:

forming a first semiconductor film layer, a multi-quantum well film layer and a second semiconductor film layer on one side of the supporting layer in sequence;

etching the second semiconductor film layer, the multiple quantum well film layer and part of the first semiconductor film layer to form a plurality of light emitting units;

the first semiconductor layers of the light emitting units are connected into a whole, a plurality of first grooves are formed in one side, close to the multiple quantum well layer, of the first semiconductor layer, and the common electrode layer is located in the first grooves.

forming at least one buffer layer on one side of the supporting layer, and etching the surface of the buffer layer on the side far away from the supporting layer to form at least one metamaterial layer;

etching the surface of the buffer layer farthest from the support layer to form a plurality of second grooves, and forming the common electrode layer in the second grooves;

sequentially forming a second semiconductor film layer, a multi-quantum well film layer and a first semiconductor film layer on the temporary substrate;

bonding one side of the temporary substrate provided with the first semiconductor film layer with one side of the supporting layer provided with the buffer layer, and removing the temporary substrate;

forming a driving electrode film layer on one side, far away from the supporting layer, of the second semiconductor film layer;

and etching the driving electrode film layer, the second semiconductor film layer, the multi-quantum well film layer and the first semiconductor film layer to form the plurality of light emitting units and the plurality of driving electrodes.

Optionally, forming at least one buffer layer on one side of the support layer, and etching a surface of the at least one buffer layer on a side away from the support layer to form at least one metamaterial layer includes:

forming a buffer layer on one side of the supporting layer, and etching the surface of the buffer layer on the side far away from the supporting layer to form a super-structure layer;

forming a buffer layer on a temporary substrate, bonding one side of the temporary substrate, which is provided with the buffer layer, with one side of the supporting layer, which is provided with the buffer layer, and removing the temporary substrate;

etching the surface of the buffer layer which is farthest away from the supporting layer, on the side, away from the supporting layer, to form a super-structure layer;

and repeating the steps of forming a new buffer layer on the temporary substrate, bonding and etching the buffer layer bonded to the support layer to form a new metamaterial until a preset number of metamorphic layers are formed.

forming a buffer layer on one side of the supporting layer, etching the surface of the buffer layer on the side far away from the supporting layer to form a plurality of second grooves, and forming the common electrode layer in the second grooves;

etching the surface of one side of the buffer layer, which is far away from the supporting layer, to form a super-structure layer;

Optionally, in a direction perpendicular to the buffer layer, a thickness of the common electrode layer is smaller than a depth of the second groove.

etching the surface of the first semiconductor film layer, which is far away from one side of the temporary substrate, to form a super-structure layer;

and etching the driving electrode film layer, the second semiconductor film layer, the multi-quantum well film layer and the first semiconductor film layer to form the plurality of light-emitting units and the plurality of driving electrodes.

In the micron light emitting diode device provided by the embodiment of the present invention, the common electrode layer 20 may be formed of a metal mesh. The super-structure layer is a layered structure with specific etching patterns, the super-structure layer comprises a plurality of super-structure units 50, and the super-structure units 50 adjust the light emitting angle and the light emitting direction of the light emitting unit 30 to realize ultra-high light emitting brightness and small-angle emitting of emergent light, so that the light utilization rate is improved. Further, different superstructure units 50 may make the light-emitting angles and light-emitting directions of different light-emitting units 30 different, so as to realize independent control of the light-emitting angles and light-emitting directions of different light-emitting units 30. Wherein, the light-emitting angle refers to the emission angle.

Drawings

Fig. 1 is a schematic structural diagram of a micron light emitting diode device according to an embodiment of the present invention;

FIG. 2 is an enlarged schematic view of the region S1 in FIG. 1;

FIG. 3 is a schematic structural diagram of another superstructure unit provided by an embodiment of the present invention;

fig. 4 is a schematic structural diagram of another micron light emitting diode device provided in an embodiment of the present invention;

FIG. 5 is an enlarged schematic view of the area S2 in FIG. 4;

fig. 6 is a schematic structural diagram of another micron light emitting diode device according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram of another micron light emitting diode device according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of another micron light emitting diode device provided in an embodiment of the present invention;

fig. 9 is an enlarged schematic view of the region S3 in fig. 8;

fig. 10 is a schematic structural diagram of another micron light emitting diode device provided in an embodiment of the present invention;

fig. 11 is a schematic structural view of a micrometer light emitting diode device without a super structural unit;

fig. 12 is a schematic structural diagram of another micrometer light emitting diode device according to an embodiment of the present invention;

fig. 13 is a schematic structural diagram of a display panel according to an embodiment of the present invention;

fig. 14 is a schematic structural diagram of a display panel according to an embodiment of the present invention;

fig. 15 is a schematic structural diagram of a display panel according to an embodiment of the present invention;

fig. 16 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

fig. 17 is a schematic perspective view of the display panel shown in fig. 16;

FIG. 18 is a diagram illustrating a structure of a vector pixel according to an embodiment of the present invention;

fig. 19 is a schematic structural diagram of a wafer according to an embodiment of the present invention;

fig. 20 is a flowchart of a method for manufacturing a micro led device according to an embodiment of the present invention;

fig. 21 is a flowchart of a method for manufacturing another micron light emitting diode device according to an embodiment of the present invention;

FIG. 22 is a flowchart of a refinement step of step S202 in FIG. 21;

fig. 23-27 are schematic diagrams illustrating a process of fabricating a micro light emitting diode device according to an embodiment of the invention;

fig. 28 is a flowchart of a method for manufacturing another micron led device according to an embodiment of the present invention;

FIG. 29 is a flowchart of a refinement step of step S302 in FIG. 28;

fig. 30-37 are schematic diagrams illustrating a manufacturing process of another micron light emitting diode device according to an embodiment of the present invention;

fig. 38-41 are schematic diagrams illustrating a partial fabrication process of another micron led device according to an embodiment of the present invention;

fig. 42 is a flowchart of a method for fabricating another micron led device according to an embodiment of the present invention;

fig. 43-50 are schematic diagrams illustrating a manufacturing process of another micron light emitting diode device according to an embodiment of the present invention;

fig. 51 is a flowchart of a method for manufacturing another micron light emitting diode device according to an embodiment of the present invention;

fig. 52-59 are schematic diagrams illustrating a manufacturing process of another micron light emitting diode device according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Fig. 1 is a schematic structural diagram of a micron light emitting diode device according to an embodiment of the present invention, and fig. 2 is an enlarged schematic structural diagram of a region S1 in fig. 1, and referring to fig. 1 and fig. 2, the micron light emitting diode device includes a common electrode layer 20, a plurality of light emitting units 30, a plurality of driving electrodes 40, and at least one super layer (one super layer is exemplarily illustrated in fig. 1). Among them, the light emitting cell 30 includes a first semiconductor layer 31, a second semiconductor layer 33, and a multiple quantum well layer 32 between the first semiconductor layer 31 and the second semiconductor layer 33. The common electrode layer 20 is in a grid shape, the grid of the common electrode layer 20 surrounds and forms a plurality of first openings 21, the first openings 21 expose the light emitting units 30, that is, a vertical projection of the light emitting units 30 on a plane of the first semiconductor layer 31 is located within a vertical projection of the first openings 21 on a plane of the first semiconductor layer 31. The common electrode layer 20 is electrically connected to the first semiconductor layer 31. The driving electrode 40 is located on the second semiconductor layer 33 side away from the multiple quantum well layer 32, and the driving electrode 40 is electrically connected to the second semiconductor layer 33. The super layers are located on the light emitting display side of the light emitting cells 30, and each of the super layers includes a plurality of super cells 50. The first opening 21 exposes the super-structure unit 50, that is, a vertical projection of the super-structure unit 50 on a plane of the first semiconductor layer 31 is located within a vertical projection of the first opening 21 on a plane of the first semiconductor layer 31. The super-structure units 50 correspond to the light-emitting units 30 one by one, and the super-structure units 50 are provided with a plurality of concave structures or a plurality of convex structures (exemplarily, a plurality of concave structures are explained in fig. 1 and fig. 2) for changing light intensity distribution characteristics of the outgoing light, where the light intensity distribution characteristics include a light divergence angle and a deflection direction of a principal light.

Fig. 3 is a schematic structural diagram of another superstructure unit according to an embodiment of the present invention, and referring to fig. 3, a superstructure unit 50 is provided with a plurality of protruding structures. The plurality of projection structures includes a plurality of cylindrical projections. In the same super-structure layer, all the raised structures have the same height. In the same super-structure layer, the protruding structures in different super-structure units 50 have different diameters, so that different super-structure units 50 have different surface types, and the light emitting angles and the light emitting directions of different light emitting units 30 are independently controlled. In the embodiment of the present invention, all the cylindrical protrusions have the same height, so that the super-structural unit 50 can be integrated with other structural components, and the problems of warping and the like of the super-structural unit 50 can be prevented. It should be noted that, due to the limitation of the processing technology, the protruding structure formed in the actual product is not a standard cylinder, and may have a certain conicity, i.e. a truncated cone shape is formed.

Alternatively, referring to FIG. 3, the height of the cylindrical protrusions is H1, and the height of the cylindrical protrusions is greater than or equal to 800nm and less than or equal to 1000nm, i.e., 800nm ≦ H1 ≦ 1000 nm. The diameter of the cylindrical protrusion is H2, the diameter of the cylindrical protrusion is greater than or equal to 100nm and less than or equal to 300nm, namely H2 is greater than or equal to 100nm and less than or equal to 300 nm.

Illustratively, sub-wavelength diameter recessed or raised structures may be etched to a depth of hundreds of nanometers to form a metamaterial layer (including the metamaterial unit cells 50) over a diameter range on the order of wavelengths. The metamaterial layer (including the metamaterial unit 50) may be made of a material having characteristics such as a high refractive index, a good conductivity, and easy bonding with GaN (i.e., gallium nitride), and further, may be made of a material having characteristics such as easy manufacturing, transparency, and good flatness.

Alternatively, referring to fig. 1, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. In a direction perpendicular to the plane of the first semiconductor layer 31, the thickness of the N-type gallium nitride layer is greater than the thickness of the P-type gallium nitride layer, that is, the thickness of the first semiconductor layer 31 is greater than the thickness of the second semiconductor layer 33.

Alternatively, referring to fig. 1, the surface of the first semiconductor layer 31 on the side away from the multiple quantum well layer 32 is etched to form a super-structure layer. The super-structure unit 50 in the super-structure layer is provided with a plurality of concave structures or a plurality of convex structures to change the light intensity distribution characteristics of the emergent light, and the light intensity distribution characteristics include the light divergence angle and the deflection direction of the principal light. In the embodiment of the present invention, the first semiconductor layer 31 is etched, so that a super-structure layer is formed on the side of the first semiconductor layer 31 away from the multiple quantum well layer 32, which is equivalent to multiplexing the first semiconductor layer 31 as the super-structure layer, and since the super-structure layer multiplexes the original film layer (the first semiconductor layer 31), the thickness of the micron light emitting diode is not increased, and the light emitting angles and the light emitting directions of different light emitting units 30 are independently controlled.

Alternatively, referring to fig. 1, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. The first semiconductor layers 31 of the plurality of light emitting cells 30 are integrally connected to each other. That is, the multiple quantum well layer 32 and the second semiconductor layer 33 of the plurality of light emitting cells 30 are collectively formed on one first semiconductor layer 31. The common electrode layer 20 is located on the surface of the first semiconductor layer 31 on the side adjacent to the multiple quantum well layer 32. In the embodiment of the present invention, the common electrode layer 20, the multiple quantum well layer 32, the second semiconductor layer 33, and the driving electrode 40 are located on the same side of the first semiconductor layer 31, which is equivalent to multiplexing the first semiconductor layer 31 as a substrate, so that a special substrate is not required to be arranged, and the thickness of the micron light emitting diode is reduced.

Alternatively, referring to fig. 1, the first semiconductor layer 31 is provided with a plurality of first grooves 111 on the side adjacent to the multiple quantum well layer 32, and the common electrode layer 20 is located in the first grooves 111. In the embodiment of the invention, the plurality of first grooves 111 are arranged on the side of the first semiconductor layer 31 close to the multiple quantum well layer 32, the first grooves 111 are located between two adjacent light emitting units 30, and the first semiconductor layer 31 is etched at the first grooves 111, so that the adhesion of the multiple quantum well layers 32 in the two adjacent light emitting units 30 is avoided, and the adjacent multiple quantum well layers 32 can be completely cut and separated.

Exemplarily, referring to fig. 1, the common electrode layer 20 further includes a common electrode terminal 311.

Fig. 4 is a schematic structural diagram of another micron light emitting diode device according to an embodiment of the present invention, and fig. 5 is an enlarged structural diagram of a region S2 in fig. 4, where the micron light emitting diode device further includes at least one buffer layer 11 (one buffer layer 11 is exemplarily illustrated in fig. 4, and is not limited to the embodiment of the present invention), and the at least one buffer layer 11 is located on a side of the first semiconductor layer 31 away from the mqw layer 32. The surface of at least one buffer layer 11 on the side adjacent to the multiple quantum well layer 32 is etched to form a super-structure layer. The super-structure unit 50 in the super-structure layer is provided with a plurality of concave structures or a plurality of convex structures to change the light intensity distribution characteristics of the emergent light, and the light intensity distribution characteristics include the light divergence angle and the deflection direction of the principal light. In the embodiment of the present invention, at least one buffer layer 11 is etched to form at least one super-structure layer on the side of the at least one buffer layer 11 away from the multiple quantum well layer 32, for example, one buffer layer 11 is etched to form one super-structure layer, or two buffer layers 11 are etched to form two super-structure layers, or only one buffer layer 11 of the two buffer layers 11 is etched to form one super-structure layer. Equivalently, at least one buffer layer 11 is multiplexed into a super-structure layer, and the original film layer (buffer layer 11) is multiplexed into the super-structure layer, so that the thickness of the micrometer light emitting diode is not increased, and the light emitting angles and the light emitting directions of different light emitting units 30 are independently controlled. Further, in the manufacturing process of the micron light emitting diode device, one side of the buffer layer 11, which is provided with the super-structure layer, needs to be bonded with the light emitting unit film layer, and the light emitting unit film layer is the whole film layer before patterning, so that the super-structure layer is etched and formed on at least one buffer layer 11, alignment is not needed in the bonding process, the alignment process is omitted, and the process flow is simplified.

Optionally, referring to fig. 4, the micron light emitting diode device further includes at least one buffer layer 11, and the at least one buffer layer 11 is located on a side of the first semiconductor layer 31 away from the multiple quantum well layer 32. The buffer layer 11 in contact with the first semiconductor layer 31 is provided with a plurality of second grooves 112 on the side adjacent to the multiple quantum well layer 32, that is, the buffer layer 11 closest to the multiple quantum well layer 32 is provided with a plurality of second grooves 112 on the side adjacent to the multiple quantum well layer 32. The common electrode layer 20 is located in the plurality of second grooves 112. The thickness of the common electrode layer 20 is smaller than the depth of the second groove in a direction perpendicular to the buffer layer 11. In the embodiment of the present invention, the common electrode layer 20 is located in the plurality of second grooves 112, and the thickness of the common electrode layer 20 is smaller than the depth of the second grooves 112, so that the common electrode layer 20 does not contact with the light emitting unit film layer during the bonding process, the common electrode layer 20 does not adversely affect the bonding, and a compressive deformation margin is provided for the buffer layer 11, even if the buffer layer 11 undergoes compressive deformation, the common electrode layer 20 does not contact with the light emitting unit film layer, the common electrode layer 20 does not adversely affect the bonding, and the bonding quality is further ensured.

Alternatively, referring to fig. 4, the distance between any two edges of the first semiconductor layer 31 is greater than 0. That is, any two first semiconductor layers 31 are independent of each other, any two first semiconductor layers 31 are not connected, any two first semiconductor layers 31 are not in contact, and the plurality of first semiconductor layers 31 are discretely distributed. A continuous light guide is not formed, and light crosstalk between adjacent light emitting units 30 is prevented.

Optionally, referring to fig. 4, the micron light emitting diode device further comprises a support layer 10, the support layer 10 being located on a side of the at least one buffer layer 11 away from the mqw layer 32. The common electrode layer 20, the plurality of light emitting cells 30, the plurality of driving electrodes 40, the at least one super layer, and the at least one buffer layer 11 are located on the same side of the support layer 10.

Exemplarily, referring to fig. 4, the support layer 10 may be a transparent protective layer, and the support layer 10 may include a sapphire material. The buffer layer 11 may include a gallium nitride material and an N-type gallium nitride material. That is, a gallium nitride material is grown on the support layer 10 of sapphire material, and then an N-type gallium nitride material is grown on the film layer formed of the gallium nitride material. Before growing the N-type gallium nitride material, the gallium nitride material is grown, the N-type gallium nitride material is grown on the gallium nitride material, and the lattice defect of the N-type gallium nitride material can be prevented due to the lattice matching of the gallium nitride material and the N-type gallium nitride material.

Fig. 6 is a schematic structural diagram of another micro light emitting diode device according to an embodiment of the present invention, and referring to fig. 6, the micro light emitting diode device includes a support layer 10, a common electrode layer 20, a plurality of light emitting units 30, a plurality of driving electrodes 40, and a plurality of super layers (two super layers are exemplarily illustrated in fig. 6, and are not limited to the embodiment of the present invention). The micro-led device further comprises a plurality of buffer layers 11 (two buffer layers 11 are schematically illustrated in fig. 6, and do not limit the embodiment of the present invention). The surface of each buffer layer 11 away from the supporting layer 10 is etched to form a metamaterial layer, and each metamaterial layer comprises a plurality of metamaterial units 50. In the embodiment of the invention, the multilayer super-structure layer can further control the divergence angle and the deflection direction of the light beam, and realize smaller divergence angle and higher light emitting brightness.

Illustratively, referring to fig. 6, the plurality of different buffer layers 11 may be made of a gallium nitride material, or other material capable of bonding with a gallium nitride material. The thicknesses of the different metamaterial layers may be the same or different. The heights of the raised structures in two different metamaterial layers can be the same or different (the heights of all the raised structures in the same metamaterial layer are the same).

In the above embodiment, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. In another embodiment, the following may be possible: the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, and the driving electrode 40 is a cathode.

Fig. 7 is a schematic structural diagram of another micron light emitting diode device provided in an embodiment of the present invention, and referring to fig. 7, the micron light emitting diode device includes a common electrode layer 20, a plurality of light emitting units 30, a plurality of driving electrodes 40, and at least one super layer (one super layer is exemplarily illustrated in fig. 7). The super layers are located on the light emitting display side of the light emitting cells 30, and each of the super layers includes a plurality of super cells 50. The micro light emitting diode device further includes at least one buffer layer 11 (one buffer layer 11 is exemplarily illustrated in fig. 7, and is not a limitation on the embodiment of the present invention), and the at least one buffer layer 11 is located on a side of the first semiconductor layer 31 away from the multi quantum well layer 32. The surface of at least one buffer layer 11 on the side adjacent to the multiple quantum well layer 32 is etched to form a super-structure layer.

Exemplarily, referring to fig. 7, the micron light emitting diode device further includes a support layer 10, the support layer 10 being located on a side of the at least one buffer layer 11 away from the mqw layer 32. The buffer layer 11 may include a gallium nitride material and a P-type gallium nitride material. That is, a gallium nitride material is grown on the support layer 10 of sapphire material, and then a P-type gallium nitride material is grown on the film layer formed of the gallium nitride material. Before growing the P-type gallium nitride material, the gallium nitride material is grown, the P-type gallium nitride material is grown on the gallium nitride material, and the lattice defect of the P-type gallium nitride material can be prevented favorably because the lattice matching of the gallium nitride material and the P-type gallium nitride material is realized.

Fig. 8 is a schematic structural diagram of another micron light emitting diode device according to an embodiment of the present invention, fig. 9 is an enlarged structural diagram of an area S3 in fig. 8, referring to fig. 8 and fig. 9, the first semiconductor layer 31 is etched, so that a super-structure layer is formed on a side of the first semiconductor layer 31 away from the mqw layer 32, which is equivalent to multiplexing the first semiconductor layer 31 as the super-structure layer, because the super-structure layer multiplexes an original film layer (the first semiconductor layer 31), the thickness of the micron light emitting diode is not increased, and individual control of light emitting angles and light emitting directions of different light emitting units 30 is realized.

Fig. 10 is a schematic structural diagram of another micron light emitting diode device according to an embodiment of the present invention, and referring to fig. 10, the micron light emitting diode device includes a plurality of buffer layers 11 (two buffer layers 11 are exemplarily illustrated in fig. 10, and are not limited to the embodiment of the present invention). The surface of each buffer layer 11 away from the supporting layer 10 is etched to form a metamaterial layer, and each metamaterial layer comprises a plurality of metamaterial units 50. In the embodiment of the invention, the multilayer super-structure layer can further control the divergence angle and the deflection direction of the light beam, and realize smaller divergence angle and higher light emitting brightness.

Exemplarily, referring to fig. 7, 8 and 10, the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, and the driving electrode 40 is a cathode. In a direction perpendicular to the plane of the first semiconductor layer 31, the thickness of the N-type gallium nitride layer is greater than that of the P-type gallium nitride layer, that is, the thickness of the first semiconductor layer 31 is less than that of the second semiconductor layer 33.

The existing red light emitting diode is prepared by adopting a gallium arsenide substrate, and the gallium arsenide substrate has the defect of light absorption, so that the processing difficulty is high. The defect of light absorption of the gallium arsenide substrate can be solved by using a mode that a blue light emitting diode emitting blue light irradiates a red light quantum dot film. Fig. 11 is a schematic structural diagram of a micrometer light emitting diode device without a super-structure unit, and referring to fig. 11, since the light emitting distribution of the light emitting unit 30 is lambertian, light emitted by the light emitting unit 30 passes through the sub-dot film 82, which may cause crosstalk between light emitting units 30 adjacent to each other, and reduce display resolution.

Fig. 12 is a schematic structural diagram of another micron light emitting diode device according to an embodiment of the present invention, and referring to fig. 12, the micron light emitting diode device includes a super unit 50, and the micron light emitting diode device further includes a quantum dot film 82, where the quantum dot film 82 is located on a side of the first semiconductor layer 31 away from the mqw layer 32. The side of the first semiconductor layer 31 away from the multiple quantum well layer 32 is the light emitting display side of the light emitting unit 30, and the quantum dot film 82 is located on the light emitting display side of the light emitting unit 30. Illustratively, when the buffer layer 11 is etched to form the super layer, the quantum dot film 82 is located on the side of the super structure unit 50 away from the light emitting unit 30. In the embodiment of the present invention, because the angle of the emergent light of the light emitting unit 30 is reduced by the super-structure unit 50, the light divergence angle is small, and the radiation area is within a pixel range (i.e. the range where the light emitting unit 30 is located), the crosstalk between adjacent light emitting units 30 can be reduced.

For example, in some possible embodiments, the light emitting unit 30 emits blue light, the quantum dot film 82 includes a red quantum dot film, and the light emitting unit 30 emits blue light to irradiate the red quantum dot film to generate red light. The micron light emitting diode device can realize red display. In other possible embodiments, the light emitting unit 30 emits blue light, and the quantum dot film 82 includes a red quantum dot film and a green quantum dot film, for example, different regions of the quantum dot film 82 are injected with quantum dots of different particle sizes to realize the red quantum dot film and the green quantum dot film, respectively. The light emitting unit 30 emits blue light to irradiate the red light quantum dot film to generate red light, and the light emitting unit 30 emits blue light to irradiate the green light quantum dot film to generate green light. The quantum dot film 82 can directly transmit blue light in the region where no quantum dots are injected, so that the micron light emitting diode device can realize color display.

Fig. 13 is a schematic structural diagram of a display panel according to an embodiment of the present invention, fig. 14 is a schematic structural diagram of a display panel according to an embodiment of the present invention, fig. 15 is a schematic structural diagram of a display panel according to an embodiment of the present invention, referring to fig. 13, fig. 14 and fig. 15, the display panel includes a micro light emitting diode device according to any embodiment, and further includes a driving chip 60, the driving chip 60 includes a first electrode 61 and a plurality of second electrodes 62, the first electrode 61 is electrically connected to the common electrode layer 20, and exemplarily, the first electrode 61 is electrically connected to the common electrode terminal 311 of the common electrode layer 20. The second electrodes 62 are electrically connected to the driving electrodes 40 in a one-to-one correspondence.

Optionally, referring to fig. 13, 14 and 15, the display panel further includes a glue layer 70, and the glue layer 70 is located between the driving chip 60 and the micrometer light emitting diode device. In the embodiment of the invention, the bonding layer 70 is used for bonding, so that the bonding efficiency can be improved, and wafer-level direct bonding can be realized.

Alternatively, referring to fig. 13, 14 and 15, the driving electrode 40 includes a first end surface and a second end surface, the first end surface is located between the second end surface and the light emitting unit 30, the area of the first end surface is greater than that of the second end surface, and the first end surface and the second end surface are parallel to the first semiconductor layer 31, i.e., the first end surface and the second end surface are parallel to the light emitting surface of the display panel. In the embodiment of the present invention, the area of the first end surface is larger than that of the second end surface, and the first end surface facing the glue layer 70 is relatively sharp, so that the glue layer material around the driving electrode 40 is more easily displaced during the gluing process, so as to ensure that the micrometer light emitting diode device and the driving chip 60 can be better bonded.

Exemplarily, referring to fig. 13, 14 and 15, the driving chip 60 further includes a driving substrate 63, and the first electrode 61 and the plurality of second electrodes 62 are located on a side of the driving substrate 63 facing the light emitting unit 30.

Exemplarily, referring to fig. 13, 14 and 15, the driving electrode 40 is a metal layer as a driving electrode of the light emitting unit 30, and is bonded with the second electrode 62 of the driving chip 60. The driving electrode 40 may have a light reflecting function, and reflect the light emitted by the light emitting unit 30 to the light emitting surface direction, for example, the driving electrode 40 may be made of a highly reflective aluminum material.

In the micrometer light emitting diode device of the display panel shown in fig. 13, 14, and 15, the "first semiconductor layer 31 includes an N-type gallium nitride layer, and the" second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. In another embodiment, the following may be possible: the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, and the driving electrode 40 is a cathode.

Fig. 16 is a schematic structural diagram of another display panel according to an embodiment of the present invention, fig. 17 is a schematic structural diagram of a three-dimensional structure of the display panel shown in fig. 16, and referring to fig. 16 and 17, a driving chip 60 includes a micro electro mechanical device (not shown in fig. 16 and 17), the micro electro mechanical device is configured to move in a horizontal direction (X direction) and a vertical direction (Y direction) and drive the driving chip 60 to scan in the horizontal direction and the vertical direction, and since a plurality of light emitting units 30 are rigidly fixed to the driving chip 60, the micro electro mechanical device drives the plurality of light emitting units 30 to scan in the horizontal direction and the vertical direction. The horizontal direction is perpendicular to the vertical direction, and the horizontal direction and the vertical direction are parallel to the plane of the plurality of light emitting units 30. The display panel further includes a light-shielding layer 81, and the light-shielding layer 81 is located on the light-emitting display side of the light-emitting unit 30. Illustratively, the light shielding layer 81 is located on a side of the support layer 10 away from the light emitting unit 30. The light-shielding layer 81 includes a plurality of second openings 811. The second openings 811 correspond to the first openings 21 one by one, and the area of the second openings 811 is smaller than the area of the first openings 21. That is, the vertical projection of the second opening 811 on the plane of the first semiconductor layer 31 is located within the vertical projection of the first opening 21 on the plane of the first semiconductor layer 31. In the embodiment of the present invention, based on the super-structured layer (including a plurality of super-structured units 50), the light shielding layer 81 is disposed on the light emitting side of the light emitting unit 30, and the light shielding layer 81 includes a plurality of second openings 811, and the second openings 811 have a smaller size than the first openings 21, and in combination with the micro-electromechanical device (i.e., the MEMS micro-vibration system) in the driving chip 60, a higher resolution display effect can be achieved.

For example, referring to fig. 16 and 17, the light shielding layer 81 is grown on the side of the support layer 10 away from the light emitting unit 30, and since the processed line width of the metal can reach the nanometer level, the metal can be selected as the material for forming the light shielding layer 81. Micron-sized windows smaller than the original pixel size are formed in the light-shielding layer 81 to allow only light within the range of the second opening 811 to pass through, thereby obtaining a smaller pixel size. As shown in fig. 17, the micro-electromechanical device can perform two-dimensional vibration in a plane determined by the horizontal direction and the vertical direction, thereby driving the light emitting unit array (including a plurality of light emitting units 30 arranged in an array) to perform scanning display in the X and Y directions. When the light emitting cells 30 are refreshed at a higher rate, time-division display can be realized, obtaining a higher resolution than the original resolution. For example, the dimension H3 of the pixel P1 (i.e., the light emitting unit 30) in the horizontal direction is 2um, and when the micro-electromechanical device moves 20 μm in the horizontal direction, one pixel scans in the horizontal direction, and 10 pixels can be displayed in a time-division manner. The 10 pixels include 1 original pixel P1 and 9 scanned pixels P2 obtained by scanning.

Fig. 18 is a schematic structural diagram of a vector pixel according to an embodiment of the present invention, and referring to fig. 18, the vector pixel includes a micro light emitting diode device according to any embodiment of the present invention, and the vector pixel further includes an imaging projection lens 83, and the imaging projection lens 83 is located on a side of the support layer 10 away from the light emitting unit 30. In the embodiment of the present invention, the light emitting unit array (including a plurality of light emitting units 30 arranged in an array) is combined with the imaging projection lens 83, so that the light emitting direction of the light emitting unit array can be controlled to form light emitted in different directions. Different light emitting units 30 have different light emitting directions, i.e. one pixel may have a single light emitting direction, and are therefore called vector pixels. When designing the vector pixel device, deflecting the narrow light beam is beneficial to the narrow light beam of the edge pixel entering into the imaging projection lens 83, otherwise the edge pixel can not be imaged through the imaging projection lens 83.

Fig. 19 is a schematic structural diagram of a wafer according to an embodiment of the present invention, and referring to fig. 19, a plurality of micron light emitting diode devices in the above embodiment may be simultaneously formed on the same wafer 100, and a separate micron light emitting diode device 200 is formed by a dicing process.

Fig. 20 is a flowchart of a method for manufacturing a micrometer light emitting diode device according to an embodiment of the present invention, and referring to fig. 1 and fig. 20, the method for manufacturing a micrometer light emitting diode device includes:

s101, providing a support layer 10.

S102, forming a common electrode layer 20, a plurality of light-emitting units 30 and a plurality of driving electrodes 40 on one side of a support layer 10, and forming at least one super-structure layer on a light-emitting display side of the light-emitting units 30;

among them, the light emitting cell 30 includes a first semiconductor layer 31, a second semiconductor layer 33, and a multiple quantum well layer 32 between the first semiconductor layer 31 and the second semiconductor layer 33. The common electrode layer 20 is in a grid shape, the grid of the common electrode layer 20 surrounds and forms a plurality of first openings 21, and the first openings 21 expose the light emitting units 30. The common electrode layer 20 is electrically connected to the first semiconductor layer 31. The driving electrode 40 is located on the second semiconductor layer 33 side away from the multiple quantum well layer 32, and the driving electrode 40 is electrically connected to the second semiconductor layer 33. Each super structure layer includes a plurality of super structure units 50, and first opening 21 exposes super structure unit 50, super structure unit 50 and luminescence unit 30 one-to-one, and super structure unit 50 is provided with a plurality of sunk structures or a plurality of protruding structure for change the light intensity distribution characteristic of light-emitting light, light intensity distribution characteristic include the light divergence angle, the direction of deflection of chief ray.

The method for manufacturing the micron light emitting diode device provided by the embodiment of the invention is used for forming the micron light emitting diode device in the embodiment. The super-structure layer formed on the display light-emitting side of the light-emitting unit 30 is a layered structure with specific etching patterns, the super-structure layer comprises a plurality of super-structure units 50, and the super-structure units adjust the light-emitting angle and the light-emitting direction of the light-emitting unit 30 so as to realize ultrahigh light-emitting brightness and small-angle emergent of emergent light, and improve the light utilization rate. Further, different superstructure units 50 may make the light-emitting angles and light-emitting directions of different light-emitting units 30 different, so as to realize independent control of the light-emitting angles and light-emitting directions of different light-emitting units 30. Wherein, the light-emitting angle refers to the emission angle.

Fig. 21 is a flowchart of another method for manufacturing a micron light emitting diode device according to an embodiment of the present invention, fig. 22 is a flowchart of a detailed step of step S202 in fig. 21, and fig. 23 to 27 are schematic diagrams of a process for manufacturing a micron light emitting diode device according to an embodiment of the present invention, in which a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes are formed on one side of a supporting layer, and at least one super-layer is formed on a light emitting display side of the light emitting units, and referring to fig. 1 and fig. 21 to fig. 27, the method for manufacturing a micron light emitting diode device includes:

s201, providing a support layer 10.

S202, forming a plurality of light emitting units 30 on one side of the support layer 10.

S203, forming a common electrode layer 20 on the first semiconductor layer 31 between two adjacent light emitting units 30, and forming a driving electrode 40 on a side of the light emitting unit 30 away from the support layer.

Alternatively, in some possible embodiments, the common electrode layer 20 is formed on the first semiconductor layer 31 between two adjacent light emitting units 30, and then the driving electrode 40 is formed on the side of the light emitting unit 30 away from the support layer. In other possible embodiments, the driving electrode 40 is formed on the side of the light emitting unit 30 away from the support layer, and then the common electrode layer 20 is formed on the first semiconductor layer 31 between two adjacent light emitting units 30. In other possible embodiments, the common electrode layer 20 may also be formed on the first semiconductor layer 31 between two adjacent light emitting units 30, and the driving electrode 40 is formed on the side of the light emitting unit 30 away from the support layer.

S204, the side of the support layer 10 provided with the light emitting units 30 is turned over onto the temporary substrate 90, and the support layer 10 is removed.

And S205, etching the surface of the first semiconductor layer 31 far away from the MQW layer 32 to form a super-structure layer.

Exemplarily, after step S205, the method may further include: the plurality of micrometer light emitting diode devices 200 formed on the same wafer 100 are processed by a dicing process to form individual micrometer light emitting diode devices 200 (i.e., a cleaving process). And may further comprise: the micron light emitting diode device is assembled with the driving chip 60 to form a display panel.

It should be noted that the temporary substrate 90 in step S204 may be removed after step S205, that is, after etching the surface of the first semiconductor layer 31 on the side away from the mqw layer 32 to form the super-layer, the temporary substrate 90 is removed.

Alternatively, referring to fig. 1 and 22 to 27, a plurality of light emitting units 30 are formed at one side of the support layer 10 (step S202), including:

s2021, sequentially forming a first semiconductor film layer 310, a multi-quantum well film layer 320, and a second semiconductor film layer 330 on one side of the support layer 10.

Illustratively, the first semiconductor film layer 310 includes N-type gallium nitride and the second semiconductor film layer 330 includes P-type gallium nitride. The thickness of the first semiconductor film layer 310 is greater than the thickness of the second semiconductor film layer 330.

S2022, etching the second semiconductor film layer 330, the multiple quantum well film layer 320, and a portion of the first semiconductor film layer 310 to form a plurality of light emitting units 30.

In this step, for example, a yellow light process of exposure, development, and etching may be used to etch the second semiconductor film layer 330, the multiple quantum well film layer 320, and a portion of the first semiconductor film layer 310. The second semiconductor film layer 330 may be etched to form a plurality of separated second semiconductor layers 33, the multiple quantum well film layer 320 may be etched to form a plurality of separated multiple quantum well layers 32, and the first semiconductor film layer 310 may be partially etched to form the first semiconductor layer 31 as a whole, and only the first semiconductor layer 31 is etched to form a plurality of first grooves 111. That is, the first semiconductor layers 31 of the plurality of light emitting cells 30 are integrally connected to each other, and the first semiconductor layers 31 are provided with the plurality of first grooves 111 on the side adjacent to the multiple quantum well layer 32. The common electrode layer 20 may be positioned in the first groove 111.

Fig. 28 is a flowchart of a method for manufacturing another micron light emitting diode device according to an embodiment of the present invention, fig. 29 is a flowchart of a detailed step of step S302 in fig. 28, fig. 30 to fig. 37 are schematic diagrams of a process for manufacturing another micron light emitting diode device according to an embodiment of the present invention, in which a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes are formed on one side of a supporting layer, and at least one super-layer is formed on a light emitting display side of the light emitting units, and referring to fig. 4, and fig. 28 to fig. 37, the method for manufacturing a micron light emitting diode device includes:

s301, providing a support layer 10.

S302, forming at least one buffer layer 11 on one side of the support layer 10, and etching the surface of the buffer layer 11 on the side far away from the support layer 10 to form at least one super-structure layer.

For example, the schematic process diagrams of fig. 30 to fig. 37 are illustrated by taking one buffer layer 11 as an example, and do not limit the embodiment of the present invention.

And S303, etching the surface of the buffer layer 11 farthest from the support layer 10 to form a plurality of second grooves 112, and forming the common electrode layer 20 in the second grooves 112.

In this step, optionally, the thickness of the common electrode layer 20 in a direction perpendicular to the buffer layer 11 is smaller than the depth of the second groove 112.

S304, sequentially forming a second semiconductor film layer 330, a multi-quantum well film layer 320, and a first semiconductor film layer 310 on the temporary substrate 90.

S305, bonding the side of the temporary substrate 90 provided with the first semiconductor film layer 310 with the side of the support layer 10 provided with the buffer layer 11, and removing the temporary substrate 90.

Exemplarily, referring to fig. 36, after step S305, the method may further include: the opening design is made, the depth of the via hole is consistent with the thickness of the effective layer (the second semiconductor film layer 330, the multiple quantum well film layer 320 and the first semiconductor film layer 310), i.e. the common electrode layer 20 is exposed. The metal pillar is then grown within the via until the via is filled.

And S306, forming a driving electrode film layer 400 on the side, away from the support layer 10, of the second semiconductor film layer 330.

S307, etching the driving electrode film layer 400, the second semiconductor film layer 330, the multi-quantum well film layer 320, and the first semiconductor film layer 310 to form a plurality of light emitting cells 30 and a plurality of driving electrodes 40.

In this step, the second semiconductor film layer 330 may be etched to form a plurality of separated second semiconductor layers 33, the multiple quantum well film layer 320 may be etched to form a plurality of separated multiple quantum well layers 32, and the first semiconductor film layer 310 may be etched to form a plurality of separated first semiconductor layers 31. The drive electrode film layer 400 is etched to form a plurality of separated drive electrodes 40.

Fig. 38-41 are schematic views illustrating a partial fabrication process of another micron light emitting diode device according to an embodiment of the present invention, in which an example of forming a plurality of super-layers on a plurality of buffer layers is given (taking the example of forming two super-layers on two buffer layers as an example), referring to fig. 6 and fig. 29-37, at least one buffer layer 11 is formed on one side of a support layer 10, and a surface of the at least one buffer layer 11 on a side away from the support layer 10 is etched to form at least one super-layer (step S302), including:

s3021, forming a buffer layer 11 on one side of the support layer 10, and etching the surface of the buffer layer 11 on the side far away from the support layer 10 to form a metamaterial layer.

For convenience of description, the buffer layer 11 in this step is referred to as a first buffer layer, and the metamaterial layer in this step is referred to as a first metamaterial layer. In this step, the first buffer layer is etched to form a first super-structure layer on the first buffer layer.

S3022, forming a buffer layer 11 on the temporary substrate, bonding the side of the temporary substrate provided with the buffer layer 11 with the side of the support layer 10 provided with the buffer layer 11, and removing the temporary substrate.

Illustratively, the buffer layer 11 formed on the temporary substrate in this step is referred to as a second buffer layer for convenience of description.

It should be noted that the temporary substrate in different embodiments of the present invention may be a different substrate. The temporary substrates in the same embodiment of the invention may be different substrates or may be the same substrate. The temporary substrate functions as: acting as a temporary substrate and providing temporary support. Only used during the manufacturing process and no temporary substrate is present in the resulting final product. For example, in this step, a second buffer layer may be formed on the temporary substrate, and the second buffer layer may be bonded to the first buffer layer, and after the bonding is completed, the temporary substrate may be removed.

And S3023, etching the surface of the buffer layer 11 farthest from the support layer 10 and far away from the support layer 10 to form a metamaterial layer.

For convenience of description, the metamaterial layer formed on the second buffer layer in this step is exemplarily referred to as a second metamaterial layer.

And S3024, repeating the steps of forming a new buffer layer on the temporary substrate, bonding, and etching the buffer layer bonded to the support layer to form a new metamaterial until a preset number of metamorphic layers are formed.

It is understood that if the number of the predetermined meta-layers is three, steps S3022 and S3023 may be repeated, that is, a buffer layer 11 is formed on the temporary substrate, the buffer layer 11 is referred to as a third buffer layer for convenience of description, the side of the temporary substrate provided with the third buffer layer is bonded to the side of the support layer 10 provided with the second buffer layer, and the temporary substrate is removed. Then, the surface of the third buffer layer on the side far from the support layer 10 is etched to form a layer of a metamaterial (i.e., a third metamaterial).

In the manufacturing method shown in fig. 28-41, at least one metamaterial layer (including a plurality of metamaterial units 50) is formed on at least one buffer layer 11, and then a plurality of second grooves 112 are formed on the outermost buffer layer 11. In other embodiments, the plurality of second grooves 112 may be formed on one buffer layer 11, and then the super-layer may be formed on the buffer layer 11. Fig. 42 is a flowchart of a method for manufacturing another micron light emitting diode device according to an embodiment of the present invention, and fig. 43 to fig. 50 are schematic diagrams of a manufacturing process of another micron light emitting diode device according to an embodiment of the present invention, in which a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes are formed on one side of a supporting layer, and at least one super-layer is formed on a light emitting display side of the light emitting units, and referring to fig. 4, and fig. 42 to fig. 50, the method for manufacturing a micron light emitting diode device includes:

s401, providing a support layer 10.

S402, forming a buffer layer 11 on one side of the support layer 10, etching the surface of the buffer layer 11 on the side far away from the support layer 10 to form a plurality of second grooves 112, and forming the common electrode layer 20 in the second grooves 112.

And S403, etching the surface of the buffer layer 11 far away from the supporting layer 10 to form a super-structure layer.

S404, forming a second semiconductor film layer 330, a multiple quantum well film layer 320, and a first semiconductor film layer 310 in this order on the temporary substrate 90.

S405, the side of the temporary substrate 90 provided with the first semiconductor film layer 310 is bonded to the side of the support layer 10 provided with the buffer layer 11, and the temporary substrate 90 is removed.

And S406, forming a driving electrode film layer 400 on the side, away from the support layer 10, of the second semiconductor film layer 330.

S407, etching the driving electrode film layer 400, the second semiconductor film layer 330, the multi-quantum well film layer 320, and the first semiconductor film layer 310, to form a plurality of light emitting cells 30 and a plurality of driving electrodes 40.

Fig. 51 is a flowchart illustrating a method for manufacturing another micron light emitting diode device according to an embodiment of the present invention, and fig. 52 to fig. 59 are schematic diagrams illustrating a manufacturing process of another micron light emitting diode device according to an embodiment of the present invention, in which a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes are formed on one side of a supporting layer, and at least one super-layer is formed on a light emitting display side of the light emitting units, and referring to fig. 8, and fig. 51 to fig. 59, the method for manufacturing a micron light emitting diode device includes:

s501, providing a support layer 10. S502, forming a buffer layer 11 on one side of the support layer 10, etching the surface of the buffer layer 11 on the side far away from the support layer to form a plurality of second grooves 112, and forming the common electrode layer 20 in the second grooves 112.

S503, forming a second semiconductor film layer 330, a multiple quantum well film layer 320, and a first semiconductor film layer 310 in this order on the temporary substrate 90.

Illustratively, the first semiconductor film layer 310 includes P-type gallium nitride and the second semiconductor film layer 330 includes N-type gallium nitride. The thickness of the first semiconductor film layer 310 is less than the thickness of the second semiconductor film layer 330.

And S504, etching the surface of the first semiconductor film layer 310 far away from the temporary substrate 90 to form a super-structure layer.

S505, the side of the temporary substrate 90 provided with the first semiconductor film layer 310 is bonded to the side of the support layer 10 provided with the buffer layer 11, and the temporary substrate 90 is removed.

And S506, forming a driving electrode film layer 400 on the side, away from the support layer 10, of the second semiconductor film layer 330.

S507, etching the driving electrode film 400, the second semiconductor film 330, the multiple quantum well film 320, and the first semiconductor film 310 to form a plurality of light emitting units 30 and a plurality of driving electrodes 40.

Optionally, in the foregoing embodiments, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. Alternatively, the first semiconductor layer 31 includes a P-type gallium nitride layer, and the second semiconductor layer 33 includes an N-type gallium nitride layer. The common electrode layer 20 is an anode, and the driving electrode 40 is a cathode.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A micron light emitting diode device, comprising:

2. The micron light emitting diode device of claim 1, wherein a surface of the first semiconductor layer on a side away from the MQW layer is etched to form the super-structured layer.

3. The micro light emitting diode device of claim 2, wherein the first semiconductor layer comprises an N-type gallium nitride layer and the second semiconductor layer comprises a P-type gallium nitride layer; the first semiconductor layers of the plurality of light emitting units are connected with each other to form a whole;

4. The micron light emitting diode device according to claim 3, wherein the first semiconductor layer is provided with a plurality of first grooves on a side adjacent to the MQW layer, and the common electrode layer is located in the first grooves.

5. The micron light emitting diode device of claim 1, further comprising at least one buffer layer on a side of the first semiconductor layer away from the MQW layer;

6. The micron light emitting diode device of claim 1, further comprising at least one buffer layer on a side of the first semiconductor layer away from the MQW layer;

7. The micron light emitting diode device of claim 6, wherein a distance between any two edges of the first semiconductor layer is greater than 0.

8. The micron light emitting diode device of claim 6, further comprising a support layer on a side of the at least one buffer layer away from the MQW layer.

9. The micron light emitting diode device of claim 1, wherein the plurality of bump structures comprises a plurality of cylindrical bumps;

10. The micron light emitting diode device of claim 1, further comprising a quantum dot film on a side of the first semiconductor layer away from the MQW layer.

11. A display panel comprising the micro light emitting diode device according to any one of claims 1 to 10;

12. The display panel according to claim 11, wherein the driving electrode comprises a first end surface and a second end surface, the first end surface is located between the second end surface and the light emitting unit, and an area of the first end surface is larger than an area of the second end surface.

13. A method for fabricating a micron light emitting diode device, comprising:

providing a support layer;

14. The method of claim 13, wherein forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-layer on a light emitting display side of the light emitting units comprises:

forming the plurality of light emitting cells at one side of the support layer;

15. The method of manufacturing according to claim 14, wherein forming the plurality of light emitting units on one side of the support layer comprises:

16. The method of claim 13, wherein forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-layer on a light emitting display side of the light emitting units comprises:

17. The method of claim 16, wherein forming at least one buffer layer on one side of the support layer and etching a surface of the at least one buffer layer away from the side of the support layer to form at least one meta-layer comprises:

18. The method of claim 13, wherein forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-layer on a light emitting display side of the light emitting units comprises:

19. The method according to claim 16 or 18, wherein a thickness of the common electrode layer in a direction perpendicular to the buffer layer is smaller than a depth of the second groove.

20. The method of claim 13, wherein forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-layer on a light emitting display side of the light emitting units comprises: