CN111403430B - Micro light-emitting diode device, manufacturing method thereof and display panel - Google Patents

Micro light-emitting diode device, manufacturing method thereof and display panel Download PDF

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CN111403430B
CN111403430B CN202010254643.4A CN202010254643A CN111403430B CN 111403430 B CN111403430 B CN 111403430B CN 202010254643 A CN202010254643 A CN 202010254643A CN 111403430 B CN111403430 B CN 111403430B
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light emitting
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semiconductor
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CN111403430A (en
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卢增祥
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Yixin Technology Development Co ltd
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Yixin Technology Development Co ltd
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Priority to PCT/CN2020/120074 priority patent/WO2021196556A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)

Abstract

The embodiment of the invention provides a micrometer light-emitting diode device, a manufacturing method thereof and a display panel, wherein the micrometer light-emitting diode device comprises: a plurality of light emitting units including a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer between the first semiconductor layer and the second semiconductor layer; the grid of the common electrode layer surrounds a plurality of first openings, and the first openings expose the light-emitting units; the driving electrodes are positioned on one side of the second semiconductor layer far away from the multi-quantum well layer; at least one super-structure layer positioned on the light-emitting display side of the light-emitting unit; each super structure layer comprises a plurality of super structure units, the super structure units are exposed out of the first opening, the super structure units are in one-to-one correspondence with the light emitting units, and the super structure units are provided with a plurality of concave structures or a plurality of convex structures for changing the light intensity distribution characteristics of the emergent light rays.

Description

Micro light-emitting diode device, manufacturing method thereof and display panel
Technical Field
The present invention relates to display technologies, and in particular, to a micro light emitting diode device, a manufacturing method thereof, and a display panel.
Background
Micro light emitting diode devices (micro) relate to technology for thinning, miniaturizing and arraying LED structure designs, and the size of the micro light emitting diode devices is generally in the micrometer scale. The display technology based on micro light emitting diodes is to transfer the micro light emitting diodes to a driving circuit substrate in batches and then package the micro light emitting diodes, so as to form the micro light emitting diode device.
At present, when the micro light emitting diode device is miniaturized, the efficiency is reduced. When its size is very small, its performance is affected by side wall effects associated with surface and internal defects (e.g., open adhesion, contamination, and structural damage) that lead to accelerated recombination of non-radiative carriers, greatly reducing the luminous efficiency of the micro led device, requiring higher luminous brightness to be achieved by increasing the operating current and operating voltage, which poses a significant challenge for heat dissipation of the micro led device.
Disclosure of Invention
The embodiment of the invention provides a micrometer light-emitting diode device, a manufacturing method thereof and a display panel, so as to realize ultrahigh luminous brightness and small-angle emergent of emergent light, and improve the light utilization rate.
In a first aspect, an embodiment of the present invention provides a micro light emitting diode device, including:
a plurality of light emitting units including a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer between the first semiconductor layer and the second semiconductor layer;
the grid of the common electrode layer surrounds a plurality of first openings, and the first openings expose the light emitting units; the common electrode layer is electrically connected with the first semiconductor layer;
a plurality of driving electrodes, wherein the driving electrodes are positioned on one side of the second semiconductor layer far away from the multiple quantum well layer, and the driving electrodes are electrically connected with the second semiconductor layer;
at least one super-structure layer positioned on the light-emitting display side of the light-emitting unit; each super-structure layer comprises a plurality of super-structure units, the first opening exposes the super-structure units, the super-structure units are in one-to-one correspondence with the light-emitting units, and the super-structure units are provided with a plurality of concave structures or a plurality of convex structures and are used for changing the light intensity distribution characteristics of emergent light rays, wherein the light intensity distribution characteristics comprise a light ray divergence angle and the deflection direction of main light rays.
Optionally, the surface of the side, away from the multiple quantum well layer, of the first semiconductor layer is etched to form the super-structure layer.
Optionally, the first semiconductor layer comprises an N-type gallium nitride layer, and the second semiconductor layer comprises a P-type gallium nitride layer; the first semiconductor layers of the plurality of light emitting units are connected to each other as one body;
the common electrode layer is positioned on the surface of the first semiconductor layer, which is close to one side of the multiple quantum well layer.
Optionally, the first semiconductor layer is provided with a plurality of first grooves adjacent to one side of the multiple quantum well layer, and the common electrode layer is located in the first grooves.
Optionally, the semiconductor device further comprises at least one buffer layer, wherein the buffer layer is positioned on one side of the first semiconductor layer away from the multiple quantum well layer;
and etching the surface of at least one buffer layer adjacent to one side of the multiple quantum well layer to form the super-structure layer.
Optionally, the semiconductor device further comprises at least one buffer layer, wherein the buffer layer is positioned on one side of the first semiconductor layer away from the multiple quantum well layer;
the buffer layer in contact with the first semiconductor layer is provided with a plurality of second grooves on a side adjacent to the multiple quantum well layer, and the common electrode layer is positioned in the plurality of second grooves;
The thickness of the common electrode layer is smaller than the depth of the second groove in a direction perpendicular to the buffer layer.
Optionally, a distance between edges of any two of the first semiconductor layers is greater than 0.
Optionally, the multi-quantum well structure further comprises a supporting layer, wherein the supporting layer is positioned on one side of the at least one buffer layer away from the multi-quantum well layer.
Optionally, the plurality of raised structures comprises a plurality of cylindrical protrusions;
in the same super-structure layer, all the convex structures have the same height;
in the same super-structure layer, the protruding structures in different super-structure units have different diameters.
Optionally, the semiconductor device further comprises a quantum dot film, wherein the quantum dot film is positioned on one side of the first semiconductor layer away from the multi-quantum well layer.
In a second aspect, an embodiment of the present invention provides a display panel, including the micro light emitting diode device of the first aspect;
the driving chip comprises a first electrode and a plurality of second electrodes, the first electrode is electrically connected with the common electrode layer, and the plurality of second electrodes are electrically connected with the plurality of driving electrodes in a one-to-one correspondence manner.
Optionally, the driving electrode includes a first end surface and a second end surface, the first end surface is located between the second end surface and the light emitting unit, and an area of the first end surface is larger than an area of the second end surface.
In a third aspect, an embodiment of the present invention provides a method for manufacturing a micro light emitting diode device, including:
providing a support layer;
forming a common electrode layer, a plurality of light emitting units and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-structure layer on a light emitting display side of the light emitting units;
wherein the light emitting unit includes a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer between the first semiconductor layer and the second semiconductor layer; the grid of the common electrode layer surrounds a plurality of first openings, and the first openings expose the light emitting units; the common electrode layer is electrically connected with the first semiconductor layer; the driving electrode is positioned on one side of the second semiconductor layer far away from the multiple quantum well layer, and is electrically connected with the second semiconductor layer; each super-structure layer comprises a plurality of super-structure units, the first opening exposes the super-structure units, the super-structure units are in one-to-one correspondence with the light-emitting units, and the super-structure units are provided with a plurality of concave structures or a plurality of convex structures and are used for changing the light intensity distribution characteristics of emergent light rays, wherein the light intensity distribution characteristics comprise a light ray divergence angle and the deflection direction of main light rays.
Optionally, forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one super-structure layer on a light emitting display side of the light emitting units, includes:
forming the plurality of light emitting units on one side of the support layer;
forming a common electrode layer on the first semiconductor layer between two adjacent light emitting units, and forming a driving electrode on a side of the light emitting unit away from the supporting layer;
turning over one side of the support layer, on which the light emitting units are arranged, onto a temporary substrate, and removing the support layer;
and etching the surface of the side, far away from the multi-quantum well layer, of the first semiconductor layer to form the super-structure layer.
Optionally, forming the plurality of light emitting units on one side of the support layer includes:
sequentially forming a first semiconductor film layer, a multiple quantum well film layer and a second semiconductor film layer on one side of the supporting layer;
etching the second semiconductor film layer, the multiple quantum well film layer and part of the first semiconductor film layer to form the plurality of light-emitting units;
the first semiconductor layers of the light emitting units are connected with each other into a whole, a plurality of first grooves are formed in one side, close to the multiple quantum well layers, of the first semiconductor layers, and the common electrode layer is located in the first grooves.
Optionally, forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one super-structure layer on a light emitting display side of the light emitting units, includes:
forming at least one buffer layer on one side of the supporting layer, and etching the surface of one side, away from the supporting layer, of at least one buffer layer to form at least one super-structure layer;
etching the surface of the buffer layer farthest from the support layer to form a plurality of second grooves, and forming the common electrode layer in the second grooves;
sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;
bonding one side of the temporary substrate provided with the first semiconductor film layer with one side of the support layer provided with the buffer layer, and removing the temporary substrate;
forming a driving electrode film layer on one side of the second semiconductor film layer far away from the supporting layer;
and etching the driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer to form the plurality of light emitting units and the plurality of driving electrodes.
Optionally, forming at least one buffer layer on one side of the supporting layer, and etching a surface of at least one side of the buffer layer away from the supporting layer to form at least one super-structure layer, including:
Forming a buffer layer on one side of the supporting layer, and etching the surface of one side of the buffer layer away from the supporting layer to form a super-structure layer;
forming a buffer layer on a temporary substrate, bonding one side of the temporary substrate provided with the buffer layer with one side of the support layer provided with the buffer layer, and removing the temporary substrate;
etching the surface of the buffer layer which is farthest from the supporting layer and is away from one side of the supporting layer to form a super-structure layer;
repeating the steps of forming a new buffer layer on the temporary substrate, bonding, and etching the buffer layer bonded to the support layer to form a new super structure layer until a preset number of super structure layers are formed.
Optionally, forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one super-structure layer on a light emitting display side of the light emitting units, includes:
forming a buffer layer on one side of the supporting layer, etching the surface of the buffer layer on one side far away from the supporting layer to form a plurality of second grooves, and forming the common electrode layer in the second grooves;
etching the surface of one side of the buffer layer far away from the supporting layer to form a super-structure layer;
Sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;
bonding one side of the temporary substrate provided with the first semiconductor film layer with one side of the support layer provided with the buffer layer, and removing the temporary substrate;
forming a driving electrode film layer on one side of the second semiconductor film layer far away from the supporting layer;
and etching the driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer to form the plurality of light emitting units and the plurality of driving electrodes.
Optionally, the thickness of the common electrode layer is smaller than the depth of the second groove in a direction perpendicular to the buffer layer.
Optionally, forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the support layer, and forming at least one super-structure layer on a light emitting display side of the light emitting units, includes:
forming a buffer layer on one side of the supporting layer, etching the surface of the buffer layer on one side far away from the supporting layer to form a plurality of second grooves, and forming the common electrode layer in the second grooves;
sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;
Etching the surface of the first semiconductor film layer far away from one side of the temporary substrate to form a super-structure layer;
bonding one side of the temporary substrate provided with the first semiconductor film layer with one side of the support layer provided with the buffer layer, and removing the temporary substrate;
forming a driving electrode film layer on one side of the second semiconductor film layer far away from the supporting layer;
and etching the driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer to form the plurality of light emitting units and the plurality of driving electrodes.
In the micro light emitting diode device provided by the embodiment of the present invention, the common electrode layer 20 may be formed of a metal mesh. The super structure layer is a layered structure with a specific etching pattern, the super structure layer comprises a plurality of super structure units 50, and the super structure units 50 adjust the light emitting angle and the light emitting direction of the light emitting unit 30 so as to realize the ultra-high light emitting brightness and the small angle emission of the emitted light, thereby improving the light utilization rate. Further, the different super-structure units 50 can make the light emitting angles and light emitting directions of the different light emitting units 30 different, so as to realize the independent control of the light emitting angles and light emitting directions of the different light emitting units 30. Wherein the light-emitting angle refers to the emission angle.
Drawings
Fig. 1 is a schematic structural diagram of a micro light emitting diode device according to an embodiment of the present invention;
FIG. 2 is an enlarged schematic view of the area S1 in FIG. 1;
FIG. 3 is a schematic diagram of another super-structure unit according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another micro led device according to an embodiment of the present invention;
FIG. 5 is an enlarged schematic view of the area S2 in FIG. 4;
fig. 6 is a schematic structural diagram of another micro led device according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another micro led device according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another micro led device according to an embodiment of the present invention;
FIG. 9 is an enlarged schematic view of the area S3 in FIG. 8;
fig. 10 is a schematic structural diagram of another micro led device according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of a micro light emitting diode device without a super structure unit;
fig. 12 is a schematic structural diagram of another micro led device according to an embodiment of the present invention;
fig. 13 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
Fig. 14 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 16 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 17 is a schematic perspective view of the display panel shown in FIG. 16;
fig. 18 is a schematic structural diagram of a vector pixel according to an embodiment of the present invention;
FIG. 19 is a schematic diagram of a wafer according to an embodiment of the present invention;
FIG. 20 is a flowchart of a method for fabricating a micro light emitting diode device according to an embodiment of the present invention;
FIG. 21 is a flowchart of another method for fabricating a micro light emitting diode device according to an embodiment of the present invention;
FIG. 22 is a flowchart showing the refinement step of step S202 in FIG. 21;
fig. 23-27 are schematic views illustrating a manufacturing process of a micro light emitting diode device according to an embodiment of the present invention;
FIG. 28 is a flowchart of another method for fabricating a micro light emitting diode device according to an embodiment of the present invention;
fig. 29 is a flowchart showing a refinement step of step S302 in fig. 28;
fig. 30-37 are schematic views illustrating a manufacturing process of another micro led device according to an embodiment of the present invention;
FIGS. 38-41 are schematic diagrams illustrating a portion of a fabrication process of another micro light emitting diode device according to an embodiment of the present invention;
FIG. 42 is a flowchart of another method for fabricating a micro-LED device according to an embodiment of the present invention;
fig. 43-50 are schematic views illustrating a manufacturing process of another micro led device according to an embodiment of the present invention;
FIG. 51 is a flowchart of another method for fabricating a micro light emitting diode device according to an embodiment of the present invention;
fig. 52-59 are schematic views illustrating a manufacturing process of another micro led device according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
Fig. 1 is a schematic structural diagram of a micro light emitting diode device according to an embodiment of the present invention, fig. 2 is an enlarged structural diagram of an area S1 in fig. 1, and referring to fig. 1 and 2, the micro light emitting diode device includes a common electrode layer 20, a plurality of light emitting units 30, a plurality of driving electrodes 40, and at least one super structure layer (one super structure layer is schematically illustrated in fig. 1). Wherein the light emitting unit 30 includes a first semiconductor layer 31, a second semiconductor layer 33, and a multiple quantum well layer 32 between the first semiconductor layer 31 and the second semiconductor layer 33. The common electrode layer 20 is in a grid shape, the grid of the common electrode layer 20 surrounds and forms a plurality of first openings 21, and the first openings 21 expose the light emitting units 30, that is, the vertical projection of the light emitting units 30 on the plane of the first semiconductor layer 31 is located in the vertical projection of the first openings 21 on the plane of the first semiconductor layer 31. The common electrode layer 20 is electrically connected to the first semiconductor layer 31. The driving electrode 40 is located at a side of the second semiconductor layer 33 remote from the multi-quantum well layer 32, and the driving electrode 40 is electrically connected to the second semiconductor layer 33. The super structure layers are positioned at the light emitting display side of the light emitting unit 30, and each super structure layer includes a plurality of super structure units 50. The first opening 21 exposes the super-structure unit 50, that is, the vertical projection of the super-structure unit 50 on the plane of the first semiconductor layer 31 is located in the vertical projection of the first opening 21 on the plane of the first semiconductor layer 31. The super-structure unit 50 is in one-to-one correspondence with the light emitting units 30, and the super-structure unit 50 is provided with a plurality of concave structures or a plurality of convex structures (illustratively, a plurality of concave structures are illustrated in fig. 1 and 2 as an example) for changing the light intensity distribution characteristics of the outgoing light rays, including the light divergence angle, and the deflection direction of the principal rays.
In the micro light emitting diode device provided by the embodiment of the present invention, the common electrode layer 20 may be formed of a metal mesh. The super structure layer is a layered structure with a specific etching pattern, the super structure layer comprises a plurality of super structure units 50, and the super structure units 50 adjust the light emitting angle and the light emitting direction of the light emitting unit 30 so as to realize the ultra-high light emitting brightness and the small angle emission of the emitted light, thereby improving the light utilization rate. Further, the different super-structure units 50 can make the light emitting angles and light emitting directions of the different light emitting units 30 different, so as to realize the independent control of the light emitting angles and light emitting directions of the different light emitting units 30. Wherein the light-emitting angle refers to the emission angle.
Fig. 3 is a schematic structural diagram of another super-structure unit according to an embodiment of the present invention, and referring to fig. 3, a super-structure unit 50 is provided with a plurality of protruding structures. The plurality of projection structures includes a plurality of cylindrical projections. In the same super-structure layer, all the convex structures have the same height. In the same super-structure layer, the protruding structures in different super-structure units 50 have different diameters, so that different super-structure units 50 have different surface shapes, and separate control of the light emitting angles and the light emitting directions of different light emitting units 30 is realized. In the embodiment of the invention, all the cylindrical protrusions are arranged to have the same height, so that the super-structure unit 50 and other structural components can be conveniently integrated, and the problems of warping and the like of the super-structure unit 50 are prevented. It should be noted that, due to the limitation of the processing technology, the convex structure formed in the actual product is not a standard cylinder, and may have a certain conicity, i.e. a truncated cone shape is formed.
Alternatively, referring to FIG. 3, the height of the cylindrical protrusion is H1, and the height of the cylindrical protrusion is greater than or equal to 800nm and less than or equal to 1000nm, i.e., 800 nm.ltoreq.H2.ltoreq.1000 nm. The diameter of the cylindrical bulge is H2, and the diameter of the cylindrical bulge is more than or equal to 100nm and less than or equal to 300nm, namely, H2 is more than or equal to 100nm and less than or equal to 300nm.
Illustratively, sub-wavelength diameter recessed or raised structures may be etched within a wavelength-scale diameter range, and hundred-nanometer-scale structures may be etched to form the super-structure layer (including super-structure cells 50). The super-structure layer (including the super-structure unit 50) may be made of a material having characteristics of high refractive index, good conductivity, easiness in bonding with GaN (i.e., gallium nitride), and the like, and further, may be made of a material having characteristics of easiness in manufacturing, transparency, good flatness, and the like.
Alternatively, referring to fig. 1, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. The thickness of the N-type gallium nitride layer is greater than the thickness of the P-type gallium nitride layer in a direction perpendicular to the plane of the first semiconductor layer 31, i.e., the thickness of the first semiconductor layer 31 is greater than the thickness of the second semiconductor layer 33.
Optionally, referring to fig. 1, a surface of the first semiconductor layer 31 on a side remote from the multiple quantum well layer 32 is etched to form a super structure layer. The super structure unit 50 in the super structure layer is provided with a plurality of concave structures or a plurality of convex structures to change the light intensity distribution characteristics of the outgoing light rays, including the light divergence angle, the deflection direction of the main light rays. In the embodiment of the invention, the first semiconductor layer 31 is etched, so that an ultra-structure layer is formed on one side of the first semiconductor layer 31 far away from the multi-quantum well layer 32, which is equivalent to multiplexing the first semiconductor layer 31 into the ultra-structure layer, and the thickness of the micro light emitting diode is not increased due to multiplexing the original film layer (the first semiconductor layer 31) by the ultra-structure layer, and the independent control of the light emitting angles and the light emitting directions of different light emitting units 30 is realized.
Alternatively, referring to fig. 1, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. The first semiconductor layers 31 of the plurality of light emitting cells 30 are connected to each other as one body. That is, the multiple quantum well layers 32 and the second semiconductor layers 33 of the plurality of light emitting cells 30 are commonly formed on one first semiconductor layer 31. The common electrode layer 20 is located on a surface of the first semiconductor layer 31 adjacent to a side of the multiple quantum well layer 32. In the embodiment of the present invention, the common electrode layer 20, the multiple quantum well layer 32, the second semiconductor layer 33 and the driving electrode 40 are located on the same side of the first semiconductor layer 31, which is equivalent to multiplexing the first semiconductor layer 31 as a substrate, so that no special substrate is required to be provided, and the thickness of the micro light emitting diode is reduced.
Alternatively, referring to fig. 1, the first semiconductor layer 31 is provided with a plurality of first grooves 111 adjacent to the side of the multiple quantum well layer 32, and the common electrode layer 20 is located in the first grooves 111. In the embodiment of the invention, a plurality of first grooves 111 are arranged on one side of the first semiconductor layer 31 adjacent to the multiple quantum well layer 32, the first grooves 111 are positioned between two adjacent light emitting units 30, and the first semiconductor layer 31 is etched at the first grooves 111, so that the multiple quantum well layer 32 in the two adjacent light emitting units 30 is prevented from being adhered, and the adjacent multiple quantum well layer 32 is ensured to be completely cut and separated.
Illustratively, referring to fig. 1, the common electrode layer 20 also includes a common terminal 311.
Fig. 4 is a schematic structural diagram of another micro light emitting diode device according to an embodiment of the present invention, and fig. 5 is an enlarged structural diagram of an area S2 in fig. 4, where the micro light emitting diode device further includes at least one buffer layer 11 (one buffer layer 11 is schematically shown in fig. 4, and is not limited to the embodiment of the present invention), and the at least one buffer layer 11 is located on a side of the first semiconductor layer 31 away from the multiple quantum well layer 32. The surface of at least one buffer layer 11 adjacent to the side of the multiple quantum well layer 32 is etched to form a super structure layer. The super structure unit 50 in the super structure layer is provided with a plurality of concave structures or a plurality of convex structures to change the light intensity distribution characteristics of the outgoing light rays, including the light divergence angle, the deflection direction of the main light rays. In the embodiment of the present invention, at least one buffer layer 11 is etched, so that at least one super-structure layer is formed on the side of at least one buffer layer 11 away from the multiple quantum well layer 32, for example, one buffer layer 11 is etched to form one super-structure layer, or two buffer layers 11 are etched to form two super-structure layers, or only one buffer layer 11 of the two buffer layers 11 is etched to form one super-structure layer. The multiplexing of at least one buffer layer 11 into a super-structure layer is equivalent to that of multiplexing an original film layer (buffer layer 11) into a super-structure layer, so that the thickness of the micro light emitting diode is not increased, and the independent control of the light emitting angles and the light emitting directions of different light emitting units 30 is realized. Further, in the manufacturing process of the micro light emitting diode device, the side, provided with the super structure layer, of the buffer layer 11 is required to be bonded with the light emitting unit film layer, and the light emitting unit film layer is the whole film layer before patterning, so that the super structure layer is etched and formed on at least one buffer layer 11, alignment is not required in the bonding process, an alignment process is omitted, and the process flow is simplified.
Optionally, referring to fig. 4, the micro light emitting diode device further includes at least one buffer layer 11, and the at least one buffer layer 11 is located on a side of the first semiconductor layer 31 remote from the multiple quantum well layer 32. The buffer layer 11 in contact with the first semiconductor layer 31 is provided with a plurality of second grooves 112 on the side adjacent to the multiple quantum well layer 32, that is, the buffer layer 11 closest to the multiple quantum well layer 32 is provided with a plurality of second grooves 112 on the side adjacent to the multiple quantum well layer 32. The common electrode layer 20 is located in the plurality of second grooves 112. The thickness of the common electrode layer 20 is smaller than the depth of the second groove in a direction perpendicular to the buffer layer 11. In the manufacturing process of the micro light emitting diode device, the buffer layer 11 provided with the super-structure layer is required to be bonded with the light emitting unit film layer, in the embodiment of the invention, the common electrode layer 20 is located in the plurality of second grooves 112, and the thickness of the common electrode layer 20 is smaller than the depth of the second grooves 112, so that the common electrode layer 20 cannot contact with the light emitting unit film layer in the bonding process, the common electrode layer 20 cannot have adverse effects on bonding, and the buffer layer 11 is provided with allowance of compression deformation, even if the buffer layer 11 receives compression deformation, the common electrode layer 20 cannot contact with the light emitting unit film layer, the common electrode layer 20 cannot have adverse effects on bonding, and the bonding quality is further ensured.
Alternatively, referring to fig. 4, the distance between the edges of any two first semiconductor layers 31 is greater than 0. That is, any two first semiconductor layers 31 are independent of each other, any two first semiconductor layers 31 are not connected, any two first semiconductor layers 31 are not in contact, and a plurality of first semiconductor layers 31 are discretely distributed. So that a continuous optical waveguide is not formed, and light crosstalk between adjacent light emitting units 30 is avoided.
Optionally, referring to fig. 4, the micro light emitting diode device further includes a support layer 10, the support layer 10 being located on a side of the at least one buffer layer 11 remote from the multiple quantum well layer 32. The common electrode layer 20, the plurality of light emitting cells 30, the plurality of driving electrodes 40, the at least one super structure layer, and the at least one buffer layer 11 are located on the same side of the support layer 10.
Illustratively, referring to fig. 4, the support layer 10 may be a transparent protective layer, and the support layer 10 may include a sapphire material. The buffer layer 11 may include a gallium nitride material and an N-type gallium nitride material. That is, a gallium nitride material is first grown on the support layer 10 of a sapphire material, and then an N-type gallium nitride material is grown on a film layer formed of the gallium nitride material. Before growing the N-type gallium nitride material, the gallium nitride material is grown on the N-type gallium nitride material, and the lattice defect of the N-type gallium nitride material is prevented because the gallium nitride material and the N-type gallium nitride material are matched in lattice.
Fig. 6 is a schematic structural diagram of another micro light emitting diode device according to an embodiment of the present invention, referring to fig. 6, the micro light emitting diode device includes a support layer 10, a common electrode layer 20, a plurality of light emitting units 30, a plurality of driving electrodes 40, and a plurality of super structure layers (two super structure layers are schematically shown in fig. 6, which is not a limitation of the embodiment of the present invention). The micro light emitting diode device further comprises a plurality of buffer layers 11 (two buffer layers 11 are schematically shown in fig. 6, and are not limiting to the embodiments of the present invention). Each buffer layer 11 is etched on a side surface of the support layer 10 to form a super-structure layer, and each super-structure layer includes a plurality of super-structure units 50. In the embodiment of the invention, the multi-layer super-structure layer can further control the light beam divergence angle and deflection direction, so that smaller divergence angle and higher light-emitting brightness are realized.
Illustratively, referring to fig. 6, a plurality of different buffer layers 11 may employ gallium nitride material, or other materials capable of bonding with gallium nitride material. The thickness of the different super-structure layers can be the same or different. The heights of the raised structures in two different super-structure layers may be the same or different (the heights of all the raised structures in the same super-structure layer are the same).
In the above embodiment, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode "for example. In other embodiments, it may be: the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, the driving electrode 40 is a cathode, and the material types of the first semiconductor layer 31 and the second semiconductor layer 33 are not particularly limited, and may be specifically determined according to the product requirement.
Fig. 7 is a schematic structural diagram of another micro light emitting diode device according to an embodiment of the present invention, and referring to fig. 7, the micro light emitting diode device includes a common electrode layer 20, a plurality of light emitting units 30, a plurality of driving electrodes 40, and at least one super structure layer (one super structure layer is schematically shown in fig. 7). The super structure layers are positioned at the light emitting display side of the light emitting unit 30, and each super structure layer includes a plurality of super structure units 50. The micro light emitting diode device further comprises at least one buffer layer 11 (one buffer layer 11 is schematically illustrated in fig. 7 and is not limiting to the embodiments of the present invention), the at least one buffer layer 11 being located on the side of the first semiconductor layer 31 remote from the multiple quantum well layer 32. The surface of at least one buffer layer 11 adjacent to the side of the multiple quantum well layer 32 is etched to form a super structure layer.
Illustratively, referring to fig. 7, the micro light emitting diode device further includes a support layer 10, the support layer 10 being located on a side of the at least one buffer layer 11 remote from the multiple quantum well layer 32. The buffer layer 11 may include a gallium nitride material and a P-type gallium nitride material. That is, a gallium nitride material is first grown on the support layer 10 of a sapphire material, and then a P-type gallium nitride material is grown on a film layer formed of the gallium nitride material. Before growing the P-type gallium nitride material, the gallium nitride material is grown, and the P-type gallium nitride material grows on the gallium nitride material, so that the lattice defect of the P-type gallium nitride material is prevented due to the fact that the gallium nitride material and the P-type gallium nitride material are matched in lattice.
Fig. 8 is a schematic structural diagram of another micro light emitting diode device provided in the embodiment of the present invention, fig. 9 is an enlarged structural diagram of the region S3 in fig. 8, and referring to fig. 8 and 9, the first semiconductor layer 31 is etched, so that an ultra-structure layer is formed on the side of the first semiconductor layer 31 far away from the multiple quantum well layer 32, which is equivalent to multiplexing the first semiconductor layer 31 into an ultra-structure layer, and the thickness of the micro light emitting diode is not increased due to multiplexing the ultra-structure layer into the original film layer (the first semiconductor layer 31), and the independent control of the light emitting angle and the light emitting direction of different light emitting units 30 is realized.
Fig. 10 is a schematic structural diagram of another micro light emitting diode device according to an embodiment of the present invention, and referring to fig. 10, the micro light emitting diode device includes a plurality of buffer layers 11 (two buffer layers 11 are schematically shown in fig. 10, which is not a limitation of the embodiment of the present invention). Each buffer layer 11 is etched on a side surface of the support layer 10 to form a super-structure layer, and each super-structure layer includes a plurality of super-structure units 50. In the embodiment of the invention, the multi-layer super-structure layer can further control the light beam divergence angle and deflection direction, so that smaller divergence angle and higher light-emitting brightness are realized.
Illustratively, referring to fig. 7, 8 and 10, the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, and the driving electrode 40 is a cathode. The thickness of the N-type gallium nitride layer is greater than the thickness of the P-type gallium nitride layer in a direction perpendicular to the plane of the first semiconductor layer 31, i.e., the thickness of the first semiconductor layer 31 is less than the thickness of the second semiconductor layer 33.
The current red light emitting diode is prepared by adopting a gallium arsenide substrate, and the gallium arsenide substrate has the defect of light absorption, so that the processing difficulty is high. The method of utilizing blue light emitting diode to irradiate red light quantum dot film can solve the defect of light absorption of gallium arsenide substrate. Fig. 11 is a schematic structural diagram of a micro led device without a super structure unit, and referring to fig. 11, since the light emitting distribution of the light emitting unit 30 is lambertian, the light emitted by the light emitting unit 30 passes through the quantum dot film 82, which results in light crosstalk between adjacent light emitting units 30, and reduces display resolution.
Fig. 12 is a schematic structural diagram of another micro light emitting diode device according to an embodiment of the present invention, and referring to fig. 12, the micro light emitting diode device includes a super structure unit 50, and the micro light emitting diode device further includes a quantum dot film 82, where the quantum dot film 82 is located on a side of the first semiconductor layer 31 away from the multiple quantum well layer 32. The side of the first semiconductor layer 31 away from the multiple quantum well layer 32 is the light emitting display side of the light emitting unit 30, and the quantum dot film 82 is located on the light emitting display side of the light emitting unit 30. Illustratively, the quantum dot film 82 is located on the side of the superconstituent unit 50 remote from the light emitting unit 30 when the buffer layer 11 is etched to form the superconstituent layer. In the embodiment of the present invention, the super-structure unit 50 reduces the angle of the outgoing light of the light emitting unit 30, and the divergence angle of the light is smaller, so that the radiation area is within a pixel range (i.e., the range where the light emitting unit 30 is located), and thus the crosstalk between adjacent light emitting units 30 can be reduced.
Illustratively, in some possible embodiments, the light emitting unit 30 emits blue light, the quantum dot film 82 includes a red light quantum dot film, and the emission of blue light by the light emitting unit 30 onto the red light quantum dot film may generate red light. The micro light emitting diode device can realize red display. In other possible embodiments, the light emitting unit 30 emits blue light, and the quantum dot film 82 includes a red light quantum dot film, a green light quantum dot film, for example, different regions of the quantum dot film 82 are impregnated with quantum dots of different particle sizes to realize a red light quantum dot film and a green light quantum dot film, respectively. The light emitting unit 30 emits blue light to the red light quantum dot film to generate red light, and the light emitting unit 30 emits blue light to the green light quantum dot film to generate green light. The region of the quantum dot film 82 into which the quantum dot is not injected can directly transmit blue light, so that the micro light emitting diode device can realize color display.
Fig. 13 is a schematic structural view of a display panel according to an embodiment of the present invention, fig. 14 is a schematic structural view of a display panel according to an embodiment of the present invention, fig. 15 is a schematic structural view of a display panel according to an embodiment of the present invention, and referring to fig. 13, fig. 14 and fig. 15, the display panel includes a micro light emitting diode device in any embodiment, and further includes a driving chip 60, the driving chip 60 includes a first electrode 61 and a plurality of second electrodes 62, the first electrode 61 is electrically connected to the common electrode layer 20, and the first electrode 61 is illustratively electrically connected to the common electrode end 311 of the common electrode layer 20. The second electrodes 62 are electrically connected to the driving electrodes 40 in a one-to-one correspondence.
Optionally, referring to fig. 13, 14 and 15, the display panel further includes an adhesive layer 70, and the adhesive layer 70 is located between the driving chip 60 and the micro light emitting diode device. In the embodiment of the invention, the bonding layer 70 is adopted for bonding, so that the bonding efficiency can be improved, and the wafer level direct bonding can be realized.
Alternatively, referring to fig. 13, 14 and 15, the driving electrode 40 includes a first end surface and a second end surface, the first end surface being located between the second end surface and the light emitting unit 30, the first end surface having an area larger than that of the second end surface, the first end surface and the second end surface being parallel to the first semiconductor layer 31, i.e., the first end surface and the second end surface being parallel to the light emitting surface of the display panel. In the embodiment of the present invention, the area of the first end surface is larger than that of the second end surface, and the first end surface facing the bonding layer 70 is relatively sharp, so that the bonding layer material around the driving electrode 40 is more easily discharged during the bonding process, so as to ensure that the micro led device and the driving chip 60 can be bonded better.
For example, referring to fig. 13, 14 and 15, the driving chip 60 further includes a driving substrate 63, and the first electrode 61 and the plurality of second electrodes 62 are positioned at a side of the driving substrate 63 facing the light emitting unit 30.
Illustratively, referring to fig. 13, 14 and 15, the driving electrode 40 is a metal layer, which is bonded to the second electrode 62 of the driving chip 60 as the driving electrode of the light emitting unit 30. The driving electrode 40 may have a light reflecting effect to reflect the light emitted from the light emitting unit 30 to the light emitting surface direction, and for example, the driving electrode 40 may be made of highly reflective aluminum material.
In the micro light emitting diode devices of the display panels shown in fig. 13, 14 and 15, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode "for example. In other embodiments, it may be: the first semiconductor layer 31 includes a P-type gallium nitride layer, the second semiconductor layer 33 includes an N-type gallium nitride layer, the common electrode layer 20 is an anode, the driving electrode 40 is a cathode, and the material types of the first semiconductor layer 31 and the second semiconductor layer 33 are not particularly limited, and may be specifically determined according to the product requirement.
Fig. 16 is a schematic structural view of another display panel according to an embodiment of the present invention, fig. 17 is a schematic structural view of the display panel shown in fig. 16, and referring to fig. 16 and 17, a driving chip 60 includes a microelectromechanical device (not shown in fig. 16 and 17) for moving in a horizontal direction (X direction) and a vertical direction (Y direction) and driving the driving chip 60 to scan in the horizontal direction and the vertical direction, and since a plurality of light emitting units 30 are rigidly fixed to the driving chip 60, the microelectromechanical device drives the plurality of light emitting units 30 to scan in the horizontal direction and the vertical direction. The horizontal direction is perpendicular to the vertical direction, and the horizontal direction and the vertical direction are parallel to the plane in which the plurality of light emitting units 30 are located. The display panel further includes a light shielding layer 81, and the light shielding layer 81 is located on the light emitting display side of the light emitting unit 30. Illustratively, the light shielding layer 81 is located on the side of the support layer 10 remote from the light emitting unit 30. The light shielding layer 81 includes a plurality of second openings 811. The second openings 811 are in one-to-one correspondence with the first openings 21, and the area of the second openings 811 is smaller than the area of the first openings 21. That is, the vertical projection of the second opening 811 on the plane of the first semiconductor layer 31 is located in the vertical projection of the first opening 21 on the plane of the first semiconductor layer 31. In the embodiment of the present invention, based on the super-structure layer (including the super-structure units 50), the light shielding layer 81 is disposed on the light emitting side of the light emitting unit 30, and the light shielding layer 81 includes a plurality of second openings 811, where the second openings 811 have a smaller size compared to the first openings 21, and in combination with the microelectromechanical device (i.e., the MEMS micro-vibration system) in the driving chip 60, a display effect with higher resolution can be achieved.
For example, referring to fig. 16 and 17, a light shielding layer 81 is grown on a side of the support layer 10 away from the light emitting unit 30, and since a processed line width of metal may reach a nano-scale, metal may be selected as a material for forming the light shielding layer 81. A micron-sized window smaller than the original pixel size is formed on the light shielding layer 81, and only light within the range of the second opening 811 is allowed to pass therethrough, thereby obtaining a smaller pixel size. As shown in fig. 17, the microelectromechanical device may perform two-dimensional vibration in a plane determined by a horizontal direction and a vertical direction, so as to drive the light emitting unit array (including a plurality of light emitting units 30 arranged in an array) to perform scanning display in an X direction and a Y direction. When the light emitting unit 30 is refreshed at a higher rate, a time-sharing display can be realized, obtaining a higher resolution than the original resolution. For example, the dimension H3 of the pixel P1 (i.e., the light emitting unit 30) along the horizontal direction is 2um, and when the microelectromechanical device moves 20 μm along the horizontal direction, one pixel scans along the horizontal direction, and 10 pixel points can be displayed in a time-sharing manner. The 10 pixel points include 1 original pixel P1 and 9 scanned pixels P2 obtained by scanning.
Fig. 18 is a schematic structural diagram of a vector pixel according to an embodiment of the present invention, and referring to fig. 18, the vector pixel includes a micro led device according to any embodiment of the present invention, and the vector pixel further includes an imaging projection lens 83, where the imaging projection lens 83 is located on a side of the support layer 10 away from the light emitting unit 30. In the embodiment of the invention, the light emitting unit array (including a plurality of light emitting units 30 arranged in an array) is combined with the imaging projection lens 83, so that the light emitting direction of the light emitting unit array can be controlled to form light emitted in different directions. The different light emitting units 30 have different light emitting directions, i.e., one pixel may have one single light emitting direction, and thus are called vector pixels. In designing a vector pixel device, deflecting the narrow beam facilitates entry of the narrow beam of edge pixels into the imaging projection lens 83, which would otherwise not be imaged by the imaging projection lens 83.
Fig. 19 is a schematic structural diagram of a wafer according to an embodiment of the present invention, and referring to fig. 19, a plurality of micro led devices in the above embodiment may be formed on the same wafer 100 at the same time, and separate micro led devices 200 may be formed by a dicing process.
Fig. 20 is a flowchart of a method for manufacturing a micro light emitting diode device according to an embodiment of the present invention, and referring to fig. 1 and 20, the method for manufacturing a micro light emitting diode device includes:
s101, providing a support layer 10.
S102, forming a common electrode layer 20, a plurality of light emitting units 30 and a plurality of driving electrodes 40 on one side of the support layer 10, and forming at least one super structure layer on the light emitting display side of the light emitting units 30;
wherein the light emitting unit 30 includes a first semiconductor layer 31, a second semiconductor layer 33, and a multiple quantum well layer 32 between the first semiconductor layer 31 and the second semiconductor layer 33. The common electrode layer 20 is in a grid shape, and the grid of the common electrode layer 20 surrounds and forms a plurality of first openings 21, and the first openings 21 expose the light emitting units 30. The common electrode layer 20 is electrically connected to the first semiconductor layer 31. The driving electrode 40 is located at a side of the second semiconductor layer 33 remote from the multi-quantum well layer 32, and the driving electrode 40 is electrically connected to the second semiconductor layer 33. Each super-structure layer comprises a plurality of super-structure units 50, the super-structure units 50 are exposed out of the first openings 21, the super-structure units 50 are in one-to-one correspondence with the light emitting units 30, the super-structure units 50 are provided with a plurality of concave structures or a plurality of convex structures for changing the light intensity distribution characteristics of the outgoing light rays, and the light intensity distribution characteristics comprise the light ray divergence angle and the deflection direction of the main light rays.
The manufacturing method of the micro light emitting diode device provided by the embodiment of the invention is used for forming the micro light emitting diode device in the embodiment. The super structure layer formed on the display light emitting side of the light emitting unit 30 is a layered structure with a specific etching pattern, and the super structure layer includes a plurality of super structure units 50, and the super structure units adjust the light emitting angle and the light emitting direction of the light emitting unit 30, so as to realize ultra-high light emitting brightness and small angle emission of emitted light, and improve the light utilization rate. Further, the different super-structure units 50 can make the light emitting angles and light emitting directions of the different light emitting units 30 different, so as to realize the independent control of the light emitting angles and light emitting directions of the different light emitting units 30. Wherein the light-emitting angle refers to the emission angle.
Fig. 21 is a flowchart of another method for fabricating a micro light emitting diode device according to an embodiment of the present invention, fig. 22 is a flowchart of a refinement step of step S202 in fig. 21, and fig. 23 to 27 are schematic diagrams of a process for fabricating a micro light emitting diode device according to an embodiment of the present invention, where a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes are formed on one side of a supporting layer, and at least one super structure layer is formed on a light emitting display side of the light emitting units, and referring to fig. 1 and fig. 21 to 27, the method for fabricating a micro light emitting diode device includes:
S201, providing a support layer 10.
S202, a plurality of light emitting units 30 are formed on one side of the support layer 10.
S203, the common electrode layer 20 is formed on the first semiconductor layer 31 between the adjacent two light emitting units 30, and the driving electrode 40 is formed on the side of the light emitting unit 30 away from the support layer.
Alternatively, in some possible embodiments, the common electrode layer 20 is formed on the first semiconductor layer 31 between two adjacent light emitting cells 30, and then the driving electrode 40 is formed on the side of the light emitting cells 30 away from the support layer. In other possible embodiments, the driving electrode 40 is formed at a side of the light emitting cells 30 away from the support layer, and then the common electrode layer 20 is formed on the first semiconductor layer 31 between two adjacent light emitting cells 30. In other possible embodiments, the common electrode layer 20 may be formed on the first semiconductor layer 31 between two adjacent light emitting cells 30, while the driving electrode 40 is formed on the side of the light emitting cells 30 away from the support layer.
S204, the side of the support layer 10 where the light emitting unit 30 is disposed is flipped over onto the temporary substrate 90, and the support layer 10 is removed.
S205, etching the surface of the side of the first semiconductor layer 31 away from the multiple quantum well layer 32 to form a super-structure layer.
Illustratively, after step S205, it may further include: the plurality of micro led devices 200 formed on the same wafer 100 are formed into individual micro led devices 200 through a dicing process (i.e., a process of breaking). And may further include: the micro light emitting diode device is assembled with the driving chip 60 to form a display panel.
It should be noted that, the temporary substrate 90 in step S204 may be removed after step S205, that is, after etching the surface of the side of the first semiconductor layer 31 away from the multiple quantum well layer 32 to form the super structure layer, the temporary substrate 90 may be removed.
Alternatively, referring to fig. 1 and 22 to 27, a plurality of light emitting units 30 are formed on one side of the support layer 10 (step S202), including:
s2021, a first semiconductor film 310, a multiple quantum well film 320, and a second semiconductor film 330 are sequentially formed on one side of the support layer 10.
Illustratively, the first semiconductor film 310 includes N-type gallium nitride and the second semiconductor film 330 includes P-type gallium nitride. The thickness of the first semiconductor film 310 is greater than the thickness of the second semiconductor film 330.
S2022, etching the second semiconductor film 330, the multiple quantum well film 320 and part of the first semiconductor film 310, to form a plurality of light emitting units 30.
In this step, the second semiconductor film 330, the multiple quantum well film 320, and a portion of the first semiconductor film 310 may be etched using, for example, a photolithography process of exposure, development, and etching. The second semiconductor film 330 may be etched to form a plurality of separated second semiconductor layers 33, the multiple quantum well film 320 may be etched to form a plurality of separated multiple quantum well layers 32, and the first semiconductor film 310 may be partially etched to form a first semiconductor layer 31 as a whole, and only the first semiconductor layer 31 may be etched to form a plurality of first grooves 111. That is, the first semiconductor layers 31 of the plurality of light emitting cells 30 are connected to each other as one body, and the first semiconductor layers 31 are provided with a plurality of first grooves 111 adjacent to the side of the multi-quantum well layer 32. The common electrode layer 20 may be located in the first groove 111.
Fig. 28 is a flowchart of another method for fabricating a micro light emitting diode device according to an embodiment of the present invention, fig. 29 is a flowchart of a refinement step of step S302 in fig. 28, and fig. 30 to 37 are schematic diagrams of a process for fabricating another micro light emitting diode device according to an embodiment of the present invention, in which a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes are formed on one side of a supporting layer, and at least one super structure layer is formed on a light emitting display side of the light emitting units, and referring to fig. 4, and fig. 28 to 37, the method for fabricating a micro light emitting diode device includes:
S301, providing a support layer 10.
S302, at least one buffer layer 11 is formed on one side of the support layer 10, and at least one super-structure layer is formed by etching the surface of the side, away from the support layer 10, of the at least one buffer layer 11.
Exemplary, the process of fig. 30-37 are schematic views illustrating a buffer layer 11, and are not intended to limit the embodiments of the present invention.
S303, etching the surface of the buffer layer 11 farthest from the support layer 10 to form a plurality of second grooves 112, and forming the common electrode layer 20 in the second grooves 112.
In this step, alternatively, the thickness of the common electrode layer 20 is smaller than the depth of the second groove 112 in a direction perpendicular to the buffer layer 11.
S304, a second semiconductor film 330, a multiple quantum well film 320, and a first semiconductor film 310 are sequentially formed on the temporary substrate 90.
S305, bonding the side of the temporary substrate 90 where the first semiconductor film layer 310 is provided with the buffer layer 11 to the side of the support layer 10 where the temporary substrate 90 is provided, and removing the temporary substrate 90.
Illustratively, referring to fig. 36, after step S305, it may further include: the opening design is performed, and the depth of the via hole is consistent with the thickness of the effective layers (the second semiconductor film 330, the multiple quantum well film 320 and the first semiconductor film 310), i.e., the common electrode layer 20 is exposed. And then growing metal posts in the via holes until the via holes are filled.
S306, a driving electrode film 400 is formed on the side of the second semiconductor film 330 away from the supporting layer 10.
S307, etching the driving electrode film 400, the second semiconductor film 330, the multiple quantum well film 320, and the first semiconductor film 310, to form a plurality of light emitting cells 30 and a plurality of driving electrodes 40.
In this step, the second semiconductor film 330 is etched to form a plurality of separated second semiconductor layers 33, the multiple quantum well film 320 is etched to form a plurality of separated multiple quantum well layers 32, and the first semiconductor film 310 is etched to form a plurality of separated first semiconductor layers 31. The driving electrode film 400 is etched to form a plurality of separated driving electrodes 40.
Fig. 38-41 are schematic views of a portion of a fabrication process of another micro led device according to an embodiment of the present invention, where an example of forming a plurality of super structure layers on a plurality of buffer layers (for example, forming two super structure layers on two buffer layers) is given, referring to fig. 6 and fig. 29-37, at least one buffer layer 11 is formed on one side of a support layer 10, and etching a surface of the at least one buffer layer 11 on a side far from the support layer 10 to form at least one super structure layer (step S302), which includes:
S3021, forming a buffer layer 11 on one side of the support layer 10, and etching the surface of the buffer layer 11 away from the side of the support layer 10 to form a super-structure layer.
For convenience of description, the buffer layer 11 in this step is referred to as a first buffer layer, and the super-structure layer in this step is referred to as a first super-structure layer. In this step, the first buffer layer is etched to form a first super structure layer on the first buffer layer.
S3022, forming a buffer layer 11 on the temporary substrate, bonding the side of the temporary substrate provided with the buffer layer 11 with the side of the support layer 10 provided with the buffer layer 11, and removing the temporary substrate.
For convenience of description, the buffer layer 11 formed on the temporary substrate in this step is referred to as a second buffer layer, for example.
It should be noted that the temporary substrate in different embodiments of the present invention may be different substrates. The temporary substrate in the same embodiment of the present invention may be a different substrate or may be the same substrate. The temporary substrate functions as: as a temporary substrate and provides temporary support. Only during the manufacturing process and no temporary substrate is present in the final product formed. For example, in this step, a second buffer layer may be formed on the temporary substrate, and the second buffer layer may be bonded to the first buffer layer, and after the bonding is completed, the temporary substrate may be removed.
And S3023, etching the surface of the buffer layer 11 farthest from the support layer 10 and away from the support layer 10 to form a super-structure layer.
For convenience of description, the super structure layer formed on the second buffer layer in this step is referred to as a second super structure layer.
S3024, repeating the steps of forming a new buffer layer on the temporary substrate, bonding, and etching the buffer layer bonded to the supporting layer to form a new super structure layer until a preset number of super structure layers are formed.
It will be appreciated that if the number of the preset super-structure layers is three, steps S3022 and S3023 may be repeated, that is, a buffer layer 11 is formed on the temporary substrate, the buffer layer 11 is referred to as a third buffer layer for convenience of description, and the side of the temporary substrate provided with the third buffer layer is bonded to the side of the support layer 10 provided with the second buffer layer, and the temporary substrate is removed. And then etching the surface of the third buffer layer away from the side of the support layer 10 to form a super-structure layer (i.e., a third super-structure layer).
In the manufacturing method shown in fig. 28 to 41, at least one super structure layer (including a plurality of super structure units 50) is formed on at least one buffer layer 11, and then a plurality of second grooves 112 are formed on the outermost buffer layer 11. In other embodiments, a plurality of second grooves 112 may be formed on one buffer layer 11, and then a super-structure layer may be formed on the buffer layer 11. Fig. 42 is a flowchart of another method for manufacturing a micro light emitting diode device according to an embodiment of the present invention, and fig. 43 to 50 are schematic diagrams illustrating a manufacturing process of another micro light emitting diode device according to an embodiment of the present invention, in which a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes are formed on one side of a supporting layer, and at least one super structure layer is formed on a light emitting display side of the light emitting units, and referring to fig. 4, and fig. 42 to 50, the method for manufacturing a micro light emitting diode device includes:
S401, providing a support layer 10.
S402, forming a buffer layer 11 on one side of the support layer 10, etching a surface of the buffer layer 11 on a side far away from the support layer 10 to form a plurality of second grooves 112, and forming a common electrode layer 20 in the second grooves 112.
In this step, alternatively, the thickness of the common electrode layer 20 is smaller than the depth of the second groove 112 in a direction perpendicular to the buffer layer 11.
And S403, forming a super-structure layer on the surface of the side, away from the supporting layer 10, of the etching buffer layer 11.
S404, a second semiconductor film 330, a multiple quantum well film 320 and a first semiconductor film 310 are sequentially formed on the temporary substrate 90.
S405, bonding the side of the temporary substrate 90 where the first semiconductor film layer 310 is provided with the buffer layer 11 to the side of the support layer 10 where the temporary substrate 90 is provided, and removing the temporary substrate 90.
S406, a driving electrode film 400 is formed on the side of the second semiconductor film 330 away from the supporting layer 10.
S407, etching the driving electrode film 400, the second semiconductor film 330, the multiple quantum well film 320, and the first semiconductor film 310, forms a plurality of light emitting cells 30 and a plurality of driving electrodes 40.
Fig. 51 is a flowchart of another method for manufacturing a micro light emitting diode device according to an embodiment of the present invention, and fig. 52 to 59 are schematic diagrams illustrating a manufacturing process of another micro light emitting diode device according to an embodiment of the present invention, in which a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes are formed on one side of a supporting layer, and at least one super structure layer is formed on a light emitting display side of the light emitting units, and referring to fig. 8, and fig. 51 to 59, the method for manufacturing a micro light emitting diode device includes:
S501, providing a support layer 10. S502, forming a buffer layer 11 on one side of the support layer 10, etching a surface of the buffer layer 11 away from the support layer side to form a plurality of second grooves 112, and forming a common electrode layer 20 in the second grooves 112.
S503, sequentially forming the second semiconductor film 330, the multiple quantum well film 320 and the first semiconductor film 310 on the temporary substrate 90.
Illustratively, the first semiconductor film 310 includes P-type gallium nitride and the second semiconductor film 330 includes N-type gallium nitride. The thickness of the first semiconductor film 310 is smaller than that of the second semiconductor film 330.
S504, etching the surface of the first semiconductor film 310 far away from the temporary substrate 90 to form a super-structure layer.
S505, bonding the side of the temporary substrate 90 where the first semiconductor film layer 310 is provided with the buffer layer 11 to the side of the support layer 10 where the buffer layer 11 is provided, and removing the temporary substrate 90.
S506, forming a driving electrode film 400 on the side of the second semiconductor film 330 away from the supporting layer 10.
S507, etching the driving electrode film 400, the second semiconductor film 330, the multiple quantum well film 320, and the first semiconductor film 310 forms a plurality of light emitting cells 30 and a plurality of driving electrodes 40.
Alternatively, in each of the above embodiments, the first semiconductor layer 31 includes an N-type gallium nitride layer, and the second semiconductor layer 33 includes a P-type gallium nitride layer. The common electrode layer 20 is a cathode, and the driving electrode 40 is an anode. Alternatively, the first semiconductor layer 31 includes a P-type gallium nitride layer, and the second semiconductor layer 33 includes an N-type gallium nitride layer. The common electrode layer 20 is an anode, and the driving electrode 40 is a cathode.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.

Claims (18)

1. A micro light emitting diode device, comprising:
a plurality of light emitting units including a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer between the first semiconductor layer and the second semiconductor layer;
the grid of the common electrode layer surrounds a plurality of first openings, and the first openings expose the light emitting units; the common electrode layer is electrically connected with the first semiconductor layer;
a plurality of driving electrodes, wherein the driving electrodes are positioned on one side of the second semiconductor layer far away from the multiple quantum well layer, and the driving electrodes are electrically connected with the second semiconductor layer;
At least one super-structure layer positioned on the light-emitting display side of the light-emitting unit; each super-structure layer comprises a plurality of super-structure units, the first openings expose the super-structure units, the super-structure units are in one-to-one correspondence with the light-emitting units, and the super-structure units are provided with a plurality of concave structures or a plurality of convex structures for changing the light intensity distribution characteristics of emergent light rays, wherein the light intensity distribution characteristics comprise a light ray divergence angle and a deflection direction of main light rays;
the buffer layer is positioned on one side of the first semiconductor layer away from the multiple quantum well layer;
the buffer layer in contact with the first semiconductor layer is provided with a plurality of second grooves on a side adjacent to the multiple quantum well layer, and the common electrode layer is positioned in the plurality of second grooves;
the thickness of the common electrode layer is smaller than the depth of the second groove in a direction perpendicular to the buffer layer.
2. The micro light emitting diode device of claim 1, wherein the super structure layer is formed by etching a surface of the first semiconductor layer on a side remote from the multi-quantum well layer.
3. The micro light emitting diode device of claim 2, wherein the first semiconductor layer comprises an N-type gallium nitride layer and the second semiconductor layer comprises a P-type gallium nitride layer; the first semiconductor layers of the plurality of light emitting units are connected to each other as one body;
The common electrode layer is positioned on the surface of the first semiconductor layer, which is close to one side of the multiple quantum well layer.
4. A micro light emitting diode device according to claim 3, wherein the first semiconductor layer is provided with a plurality of first grooves adjacent to one side of the multiple quantum well layer, and the common electrode layer is located in the first grooves.
5. The micro light emitting diode device of claim 1, further comprising at least one buffer layer on a side of the first semiconductor layer remote from the multiple quantum well layer;
and etching the surface of at least one buffer layer adjacent to one side of the multiple quantum well layer to form the super-structure layer.
6. The micro light emitting diode device of claim 1, wherein a distance between edges of any two of the first semiconductor layers is greater than 0.
7. The micro light emitting diode device of claim 1, further comprising a support layer on a side of the at least one buffer layer remote from the multiple quantum well layer.
8. The micro light emitting diode device of claim 1, wherein the plurality of bump structures comprises a plurality of cylindrical bumps;
In the same super-structure layer, all the convex structures have the same height;
in the same super-structure layer, the protruding structures in different super-structure units have different diameters.
9. The micro light emitting diode device of claim 1, further comprising a quantum dot film on a side of the first semiconductor layer remote from the multi-quantum well layer.
10. A display panel comprising a micro light emitting diode device according to any one of claims 1-9;
the driving chip comprises a first electrode and a plurality of second electrodes, the first electrode is electrically connected with the common electrode layer, and the plurality of second electrodes are electrically connected with the plurality of driving electrodes in a one-to-one correspondence manner.
11. The display panel according to claim 10, wherein the driving electrode includes a first end surface and a second end surface, the first end surface being located between the second end surface and the light emitting unit, and an area of the first end surface is larger than an area of the second end surface.
12. A method of fabricating a micro light emitting diode device, comprising:
providing a support layer;
forming a common electrode layer, a plurality of light emitting units and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-structure layer on a light emitting display side of the light emitting units;
Wherein the light emitting unit includes a first semiconductor layer, a second semiconductor layer, and a multiple quantum well layer between the first semiconductor layer and the second semiconductor layer; the grid of the common electrode layer surrounds a plurality of first openings, and the first openings expose the light emitting units; the common electrode layer is electrically connected with the first semiconductor layer; the driving electrode is positioned on one side of the second semiconductor layer far away from the multiple quantum well layer, and is electrically connected with the second semiconductor layer; each super-structure layer comprises a plurality of super-structure units, the first openings expose the super-structure units, the super-structure units are in one-to-one correspondence with the light-emitting units, and the super-structure units are provided with a plurality of concave structures or a plurality of convex structures for changing the light intensity distribution characteristics of emergent light rays, wherein the light intensity distribution characteristics comprise a light ray divergence angle and a deflection direction of main light rays;
forming a common electrode layer, a plurality of light emitting units, and a plurality of driving electrodes on one side of the supporting layer, and forming at least one super-structured layer on a light emitting display side of the light emitting units, comprising:
Forming at least one buffer layer on one side of the supporting layer, and etching the surface of one side, away from the supporting layer, of at least one buffer layer to form at least one super-structure layer;
etching the surface of the buffer layer farthest from the support layer to form a plurality of second grooves, and forming the common electrode layer in the second grooves;
sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;
bonding one side of the temporary substrate provided with the first semiconductor film layer with one side of the support layer provided with the buffer layer, and removing the temporary substrate;
forming a driving electrode film layer on one side of the second semiconductor film layer far away from the supporting layer;
and etching the driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer to form the plurality of light emitting units and the plurality of driving electrodes.
13. The method of claim 12, wherein forming a common electrode layer, a plurality of light emitting cells, and a plurality of driving electrodes on one side of the support layer, and forming at least one super-structure layer on a light emitting display side of the light emitting cells, comprises:
Forming the plurality of light emitting units on one side of the support layer;
forming a common electrode layer on the first semiconductor layer between two adjacent light emitting units, and forming a driving electrode on a side of the light emitting unit away from the supporting layer;
turning over one side of the support layer, on which the light emitting units are arranged, onto a temporary substrate, and removing the support layer;
and etching the surface of the side, far away from the multi-quantum well layer, of the first semiconductor layer to form the super-structure layer.
14. The method of manufacturing of claim 13, wherein forming the plurality of light emitting cells on one side of the support layer comprises:
sequentially forming a first semiconductor film layer, a multiple quantum well film layer and a second semiconductor film layer on one side of the supporting layer;
etching the second semiconductor film layer, the multiple quantum well film layer and part of the first semiconductor film layer to form the plurality of light-emitting units;
the first semiconductor layers of the light emitting units are connected with each other into a whole, a plurality of first grooves are formed in one side, close to the multiple quantum well layers, of the first semiconductor layers, and the common electrode layer is located in the first grooves.
15. The method of claim 12, wherein forming at least one buffer layer on a side of the support layer and etching at least one surface of the buffer layer on a side away from the support layer to form at least one super-structure layer comprises:
forming a buffer layer on one side of the supporting layer, and etching the surface of one side of the buffer layer away from the supporting layer to form a super-structure layer;
forming a buffer layer on a temporary substrate, bonding one side of the temporary substrate provided with the buffer layer with one side of the support layer provided with the buffer layer, and removing the temporary substrate;
etching the surface of the buffer layer which is farthest from the supporting layer and is away from one side of the supporting layer to form a super-structure layer;
repeating the steps of forming a new buffer layer on the temporary substrate, bonding, and etching the buffer layer bonded to the support layer to form a new super structure layer until a preset number of super structure layers are formed.
16. The method of claim 12, wherein forming a common electrode layer, a plurality of light emitting cells, and a plurality of driving electrodes on one side of the support layer, and forming at least one super-structure layer on a light emitting display side of the light emitting cells, comprises:
Forming a buffer layer on one side of the supporting layer, etching the surface of the buffer layer on one side far away from the supporting layer to form a plurality of second grooves, and forming the common electrode layer in the second grooves;
etching the surface of one side of the buffer layer far away from the supporting layer to form a super-structure layer;
sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;
bonding one side of the temporary substrate provided with the first semiconductor film layer with one side of the support layer provided with the buffer layer, and removing the temporary substrate;
forming a driving electrode film layer on one side of the second semiconductor film layer far away from the supporting layer;
and etching the driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer to form the plurality of light emitting units and the plurality of driving electrodes.
17. The method of claim 12 or 16, wherein the thickness of the common electrode layer is smaller than the depth of the second groove in a direction perpendicular to the buffer layer.
18. The method of claim 12, wherein forming a common electrode layer, a plurality of light emitting cells, and a plurality of driving electrodes on one side of the support layer, and forming at least one super-structure layer on a light emitting display side of the light emitting cells, comprises:
Forming a buffer layer on one side of the supporting layer, etching the surface of the buffer layer on one side far away from the supporting layer to form a plurality of second grooves, and forming the common electrode layer in the second grooves;
sequentially forming a second semiconductor film layer, a multiple quantum well film layer and a first semiconductor film layer on the temporary substrate;
etching the surface of the first semiconductor film layer far away from one side of the temporary substrate to form a super-structure layer;
bonding one side of the temporary substrate provided with the first semiconductor film layer with one side of the support layer provided with the buffer layer, and removing the temporary substrate;
forming a driving electrode film layer on one side of the second semiconductor film layer far away from the supporting layer;
and etching the driving electrode film layer, the second semiconductor film layer, the multiple quantum well film layer and the first semiconductor film layer to form the plurality of light emitting units and the plurality of driving electrodes.
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