CN102157654B - Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer - Google Patents
Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer Download PDFInfo
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- CN102157654B CN102157654B CN 201110078703 CN201110078703A CN102157654B CN 102157654 B CN102157654 B CN 102157654B CN 201110078703 CN201110078703 CN 201110078703 CN 201110078703 A CN201110078703 A CN 201110078703A CN 102157654 B CN102157654 B CN 102157654B
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Abstract
The invention discloses an inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer, wherein the chip comprises a sapphire substrate distributed with 102-104 shrinkage pools at upper and lower surfaces, an AlxGa1-xN component gradual change buffer layer composed of an unit layer formed by k non-doping AlxGa1-xN epitaxial materials, a n-type GaN epitaxial layer, an InGaN/GaN multi-quantum well, a p-type GaN layer, a transparent ITO (indium tin oxide) conductive film, an inverted mounting welding electrode and a silicon substrate from upper to lower. The LED chip disclosed by the invention uses the shrinkage pool structure for improving the emergent probability of LED emergent lights, and increasing the heat radiation area and growth stress acting range of the substrate, so that the GaB epitaxial quality and the radiation composite luminous efficiency are improved; the buffer layer of the n-type GaN epitaxial layer is manufactured by the AlxGa1-xN with gradually reduced Al component, so that the light-emitting efficiency and the internal quantum efficiency of the LED are improved, and a relatively high light output power is obtained.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit technical field, be specifically related to a kind of based on underlay patternization, Al
1-xGa
xThe flip LED chips based on two-sided shrinkage pool substrate and content gradually variational resilient coating that N ternary compound Al/Ga component control technology and Ш-V compound material epitaxy technology combines.
Background technology
In recent years, perfect along with GaN material preparation technology, p-type doping techniques, GaN based light-emitting diode (LED) has obtained greatly developing.Obtain high-quality GaN base epitaxial material at present mainly by metal organic chemical vapor deposition (MOCVD) technology, epitaxial growth on the Sapphire Substrate of insulation.Because sapphire is non-conductive, therefore can not make the LED electrode in its surface.Utilize face-down bonding technique, the led chip that will be substrate with the sapphire is transferred on heat conduction, the better base material of electric conductivity (for example silicon, copper etc.), greatly reduce the electrode manufacture difficulty, improved the heat dispersion of device, increased lighting area, significant on high power device is used.At present, it is most of for adopting the upside-down mounting GaN base chip of face-down bonding technique to sell the high-power LED chip that is of a size of about 40mil on the market, at calibration cartridge chip aspect light intensity, the power very remarkable advantages is arranged.
The LED luminous efficiency is the ratio that LED assembly outside can measure photon and the outside LED of injection electron number, it is determined by interior lights photoelectric transformation efficiency (internal quantum efficiency), light extraction efficiency and the electric injection efficiency of LED, has reflected luminous flux output and the energy dissipation behavior of LED.Because the light do not launched can be absorbed by LED, and convert heat to and cause that the LED junction temperature raises, therefore, improve the LED luminous efficiency, be that development is high-power, the fundamental way of low energy consumption, high reliability, long-life LED.
In recent years, several different methods such as the epitaxial quality of people by improving the GaN base LED chip, bright dipping mode, electrode structure, preparation technology, encapsulation, improve constantly the optical output power of LED, can reach and substitute traditional room lighting light source early, but existing upside-down mounting GaN base LED chip still has bigger room for promotion in luminous efficiency.Upside-down mounting GaN base LED chip is direct heteroepitaxy n type GaN layer on Sapphire Substrate, wherein (refractive index of GaN is 2.5 to the refractive index difference between Sapphire Substrate and the n-GaN greatly, sapphire is 1.76), light can produce stronger internal reflection (Fresnel loss) and total reflection (critical angle loss) at exit surface, cause having only the light of part angle to go out to shoot out from device, the light that other angles are bigger is reflected back toward chip internal and can't extracts.The loss at total reflection at light outgoing interface becomes one of principal element of this chip light outgoing efficient of influence.Simultaneously, the lattice constant of Sapphire Substrate and n-GaN also differs greatly, in the heteroepitaxy process, can produce bigger growth stress and dislocation defects in the n-GaN epitaxial layer interface, they serve as non-radiative recombination center, cut down effective radiation recombination speed, thereby be unfavorable for the raising of LED internal quantum efficiency.
Summary of the invention
At existing Sapphire Substrate and GaN emission layer lattice does not match and the dissatisfactory present situation of interfacial characteristics, the invention provides a kind of flip LED chips based on two-sided shrinkage pool substrate and content gradually variational resilient coating.
Flip LED chips based on two-sided shrinkage pool substrate and content gradually variational resilient coating provided by the invention, this led chip is from top to bottom by Sapphire Substrate, Al
xGa
1-xThe good silicon substrate of N content gradually variational resilient coating, n type GaN epitaxial loayer, InGaN/GaN Multiple Quantum Well, p-type GaN layer, transparent ITO conductive film, flip chip bonding electrode and conductivity is formed; The upper surface of described Sapphire Substrate is laid with m shrinkage pool I, 10
2≤ m≤10
4, lower surface is laid with n shrinkage pool II, 10
2≤ n≤10
4Described Al
xGa
1-xN content gradually variational resilient coating is by k non-doped with Al
xGa
1-xThe elementary layer that the N epitaxial material constitutes is formed, 3≤k≤10, k elementary layer from top to bottom in each layer the Al component satisfied: 1 〉=x1〉x2 ... xn 〉=0.
Further, the shrinkage pool I on the described Sapphire Substrate and shrinkage pool II are any structure in back taper V-arrangement, back taper pyramid, drum shape, the semicircle sphere;
Further, the horizontal maximum size of described shrinkage pool I and shrinkage pool II is between 0.5～5 μ m, and the degree of depth of shrinkage pool I and shrinkage pool II is between 0.5～2 μ m, and the spacing between the spacing between the adjacent shrinkage pool I and the adjacent shrinkage pool II is at 0.5～5 μ m.
Further again, described Al
xGa
1-xEach elementary layer thickness of N content gradually variational resilient coating is at 0.5～1.5 μ m; Al
xGa
1-xThe gross thickness of N content gradually variational resilient coating is at 1.5～4.5 μ m.
Compared with prior art, the flip LED chips based on two-sided shrinkage pool substrate and content gradually variational resilient coating has following advantage:
1, the present invention makes part total reflection light with the form outgoing of scattered light the two-sided shrinkage pool structure that is designed to of Sapphire Substrate, or enters outgoing in the critical angle by repeatedly reflecting, thereby realizes the raising of light extraction efficiency.Simultaneously, after the epitaxial growth plane of Sapphire Substrate arranges shrinkage pool, cooling surface area and growth stress sphere of action have been increased, thereby can cushion in the epitaxial process lateral stress that the thermal expansion coefficient difference owing to different materials causes effectively changes, reduce the lattice defect density that causes thus, improve the radiation recombination luminous efficiency of epitaxial quality and led chip.
2, the present invention adopts the Al that a kind of Al constituent content reduces gradually
xGa
1-xN designs and prepares the resilient coating of n type GaN epitaxial loayer, utilize this refractive index between sapphire and GaN and the buffer layer structure of content gradually variational, dwindle the refractive index difference between Sapphire Substrate and the n-GaN epitaxial loayer, to improve the critical loss of interface shooting angle, reduction total reflection; And the Al by the Al content gradually variational
xGa
1-xThe N resilient coating discharges the interfacial stress in the GaN epitaxial process gradually, obtains the few high-quality GaN epitaxial material of dislocation defects, finally realizes the raising of led chip luminous efficiency.
Description of drawings
Fig. 1 is the structural representation based on the flip LED chips of two-sided shrinkage pool substrate and content gradually variational resilient coating;
Fig. 2 is Al
xGa
1-xThe structural representation of N content gradually variational resilient coating;
Fig. 3 is the schematic diagram of back taper v-shaped structure for the two-sided shrinkage pool of Sapphire Substrate;
Fig. 4 is the schematic diagram of back taper pyramid structure for the two-sided shrinkage pool of Sapphire Substrate;
Fig. 5 is the schematic diagram of drum-shaped structure for the two-sided shrinkage pool of Sapphire Substrate;
Fig. 6 is the schematic diagram of semicircle spherical structure for the two-sided shrinkage pool of Sapphire Substrate;
Fig. 7 is that drum shape shrinkage pool, lower surface are the structural representation of back taper pyramid shrinkage pool for the Sapphire Substrate upper surface;
Fig. 8 is that drum shape shrinkage pool, lower surface are the structural representation of back taper V-arrangement shrinkage pool for the Sapphire Substrate upper surface;
Fig. 9 is that back taper V-arrangement shrinkage pool, lower surface are the structural representation of back taper pyramid shrinkage pool for the Sapphire Substrate upper surface.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done explanation in further detail.
Fig. 1 is the structural representation based on the flip LED chips of two-sided shrinkage pool substrate and content gradually variational resilient coating, and Fig. 2 is Al
xGa
1-xThe structural representation of N content gradually variational resilient coating, as shown in the figure.Based on the led chip of two-sided shrinkage pool substrate and content gradually variational resilient coating, this led chip is from top to bottom by Sapphire Substrate 1, Al
xGa
1-xThe good silicon substrate 8 of N content gradually variational resilient coating 2, n type GaN epitaxial loayer 3, InGaN/GaN Multiple Quantum Well 4, p-type GaN layer 5, transparent ITO conductive film 6, flip chip bonding electrode 7 and conductivity is formed.The upper surface of Sapphire Substrate 1 is laid with m shrinkage pool I 9, and wherein m satisfies: 10
2≤ m≤10
4, lower surface is laid with n shrinkage pool II 10, and wherein n satisfies: 10
2≤ n≤10
4Al
xGa
1-xN content gradually variational resilient coating 2 is by k non-doped with Al
xGa
1-xThe elementary layer that the N epitaxial material constitutes is formed, and wherein k satisfies: 3≤n≤10.K elementary layer is followed successively by Al from the top down
X1Ga
1-x1First elementary layer 21 of N, Al
X2Ga
1-x2Second elementary layer 22 of N, Al
X3Ga
1-x3The 3rd elementary layer 23 of N ..., Al
XnGa
1-xnThe 3rd elementary layer 2k of N.K elementary layer from top to bottom in each layer the Al component satisfy: 1 〉=x1〉x2 ... xn 〉=0.
Shrinkage pool I 9 on the Sapphire Substrate 1 and II 10 are any structure in back taper V-arrangement (as shown in Figure 3), back taper pyramid (as shown in Figure 4), drum shape (as shown in Figure 5), the semicircle sphere (as shown in Figure 6).These four kinds of shrinkage pools all are easy to realize by ripe micro-nano process technology such as plasma etching (ICP) or nano impression, can obtain higher shape and size machining accuracy; And these four kinds of shrinkage pools all prove by experiment can effectively improve the LED light extraction efficiency.Wherein back taper V-arrangement and back taper pyramid shrinkage pool generally can obtain the light extraction efficiency gain more than 25% to the increase rate maximum of LED light extraction efficiency.
The shrinkage pool I 9 of Sapphire Substrate 1 upper surface and the shrinkage pool II 10 of lower surface can there are differences in shape or size, but the shrinkage pool on same surface all is identical in shape and size, as Fig. 7, Fig. 8 and shown in Figure 9, to guarantee that emergent light all is subjected to identical dispersion effect in the optional position of same optical interface, obtain equally distributed emergent light.
The horizontal maximum size of shrinkage pool I 9 and shrinkage pool II 10 is between 0.5～5 μ m, and the degree of depth of shrinkage pool I 9 and shrinkage pool II 10 is between 0.5～2 μ m, and the spacing between the spacing between the adjacent shrinkage pool I 9 and the adjacent shrinkage pool II 10 is at 0.5～5 μ m.Shrinkage pool reduces emergent light in the loss at total reflection at outgoing interface by the exit probability that repeatedly reflection or scattering to emergent light improve light.When the shrinkage pool size and the emergent light wavelength is comparable or during times over the emergent light wavelength, shrinkage pool is better to the castering action of light extraction efficiency, if the infinitesimal size less than optical wavelength or much larger than optical wavelength, all can not play good effect.Because between 0.3-0.5 μ m, therefore the lateral dimension with shrinkage pool fixes on 0.5～5 μ m and considers that large-sized shrinkage pool degree of depth also is difficult to realize by etching at present the emission wavelength of GaN base LED usually, therefore with the depth design of shrinkage pool at 0.5～2 μ m.By the design of above-mentioned shrinkage pool size, guarantee that the GaN led chip obtains the good light effect that goes out.
Al
xGa
1-xEach elementary layer thickness of N content gradually variational resilient coating 2 is at 0.5～1.5 μ m; Al
xGa
1-xThe gross thickness of N content gradually variational resilient coating 2 is at 1.5～4.5 μ m.Al
xGa
1-xThe N material is the ternary compound form of GaN material, and lattice constant is slightly larger than the GaN material, by changing Al
xGa
1-xAl components contents among the N can be regulated and control Al
xGa
1-xThe lattice constant of N and refractive index are worked as Al
xGa
1-xWhen the Al constituent content descends (GaN layer) to carry out gradual change in minimizing mode gradually by last (sapphire) certainly among the N, Al
xGa
1-xThe lattice constant of N and refractive index also all can reduce along with the minimizing of Al component, thereby reduce the loss at total reflection of emergent light with this, and improve epitaxial quality and the luminous efficiency of GaN material.Because this content gradually variational resilient coating simultaneously as going out optical channel and material resilient coating, therefore requires the total thickness value can not be too little, otherwise can't play buffering effect; Can not be too big, otherwise the ill effect that causes emergent light to decay gradually along with the transmission path increase.With Al
xGa
1-xEach elementary layer Thickness Design of N content gradually variational resilient coating is at 0.5～1.5 μ m, the gross thickness design is at 1.5～4.5 μ m, make each layer thickness and GaN emergent light wavelength comparable or times over the emergent light wavelength, obtain to go out preferably light effect and epitaxial buffer performance with this.
Explanation is at last, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although with reference to preferred embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not breaking away from aim and the scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (1)
1. flip LED chips based on two-sided shrinkage pool substrate and content gradually variational resilient coating, it is characterized in that: this led chip is from top to bottom by Sapphire Substrate (1), Al
xGa
1-xThe good silicon substrate (8) of N content gradually variational resilient coating (2), n type GaN epitaxial loayer (3), InGaN/GaN Multiple Quantum Well (4), p-type GaN layer (5), transparent ITO conductive film (6), flip chip bonding electrode (7) and conductivity is formed; The upper surface of described Sapphire Substrate (1) is laid with m shrinkage pool I (9), 10
2≤ m≤10
4, lower surface is laid with n shrinkage pool II (10), 10
2≤ n≤10
4Described Al
xGa
1-xN content gradually variational resilient coating (2) is by k non-doped with Al
xGa
1-xThe elementary layer that the N epitaxial material constitutes is formed, 3≤k≤10, k elementary layer from top to bottom in each layer the Al component satisfied: 1 〉=x1〉x2 ... xn 〉=0; The horizontal maximum size of described shrinkage pool I (9) and shrinkage pool II (10) is between 0.5～5 μ m, the degree of depth of shrinkage pool I (9) and shrinkage pool II (10) is between 0.5～2 μ m, and the spacing between the spacing between the adjacent shrinkage pool I (9) and the adjacent shrinkage pool II (10) is at 0.5～5 μ m; Shrinkage pool I (9) on the described Sapphire Substrate (1) and shrinkage pool II (10) are any structure in back taper V-arrangement, back taper pyramid, drum shape, the semicircle sphere; Described Al
xGa
1-xEach elementary layer thickness of N content gradually variational resilient coating (2) is at 0.5～1.5 μ m; Al
xGa
1-xThe gross thickness of N content gradually variational resilient coating (2) is at 1.5～4.5 μ m; The shrinkage pool I (9) of Sapphire Substrate (1) upper surface and the shrinkage pool II (10) of lower surface can there are differences in shape or size, but all are identical at the shrinkage pool on same surface in shape and size.
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| CN102157654B true CN102157654B (en) | 2013-09-25 |
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