CN104600169B - Two-sided patterned substrate for flip LED chips and preparation method thereof - Google Patents
Two-sided patterned substrate for flip LED chips and preparation method thereof Download PDFInfo
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- CN104600169B CN104600169B CN201410856044.4A CN201410856044A CN104600169B CN 104600169 B CN104600169 B CN 104600169B CN 201410856044 A CN201410856044 A CN 201410856044A CN 104600169 B CN104600169 B CN 104600169B
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- 239000000758 substrate Substances 0.000 title claims abstract description 122
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 description 11
- 238000000605 extraction Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of two-sided patterned substrate for flip LED chips and preparation method thereof, by setting the microlens array with condenser effect on two relative surfaces of substrate, so that the LED substrate structure has condenser effect, so as on the premise of LED epitaxial layer crystal mass is not influenceed, improve the luminosity of flip LED chips.
Description
Technical field
The invention belongs to semiconductor optoelectronic chip manufacturing field, more particularly to a kind of two-sided figure for flip LED chips
Shape substrate and preparation method thereof.
Background technology
GaN base LED is since early 1990s are commercialized, and by the development of twenties years, its structure tended to
It is ripe and perfect, it disclosure satisfy that people at this stage to the demand of decorative lamp；But conventional light source is substituted to enter illumination completely
Field, the raising of luminosity is the endless pursuit of LED industry research workers.(approached in internal quantum efficiency
100%) on the premise of the space that can improve is limited, sight has been turned to external quantum efficiency by the researcher of LED industry, is proposed
Can improve the multiple technologies scheme and method of light extraction efficiency, for example, graphical substrate technology, sidewall roughening technology, DBR technology,
Optimize electrode structure, 2 D photon crystal etc. is made on substrate or nesa coating.Wherein patterned substrate most effect, especially
Since it is 2010, under the excitation and promotion of the various policies of government, the either dry method patterned substrate skill of cone structure
Art or the wet patterned substrate technology of Pyramid are obtained for development at full speed, and its technique is highly developed, and
FFlat substrate was instead of completely in 2012, turns into the main flow substrate of LED chip, LED crystal structure and luminous brightness is all obtained
Revolutionary raising is arrived.
From structure, LED chip has point of packed LED chip and flip LED chips, for positive cartridge chip, figure
Shape substrate technology is will to be reflected back using PSS figures from the light of luminous zone directive substrate by different faces, improves the ease of light
Go out probability, improve the light extraction efficiency of chip.But for flip-chip, avoid the need for reflecting light back into, but need
Light transmission as much as possible passes through substrate.
Compared to packed LED chip, flip-chip can solve the problems, such as the difficulty that radiates, and commercialized LED chip grows mostly
Sapphire Substrate on, be then fixed on the package support, such LED chip is and blue precious mainly by heat loss through conduction
Stone lining bottom is due to thicker, so heat is difficult to export, heat, which is gathered in chip, can influence chip reliability, increase light decay and reduction
The chip life-span；The problem of light efficiency is low, electrode are in the light, and can reduce the light extraction of chip；Current crowding can increase the voltage of chip, these
The light efficiency of chip will be reduced；Encapsulate the problem of complicated, the voltage of single led chip is 3V or so, it is therefore desirable to transformation or
Encapsulation is connected, each of which increases the difficulty of encapsulation and application, technology difficulty increases, and becomes the reliability of whole chip
Difference.
The inverted structure for having as many as such advantage will can greatly improve the most promising of LED luminosity as future
GaN base LED structure, but the LED chip of inverted structure is in N faces light extraction, on the one hand because sapphire refractive index is low
In the refractive index of gallium nitride, so the light that epitaxial layer is shot out can be totally reflected on sapphire and substrate interface, cause compared with
More light can not come out, and reduce light extraction efficiency；On the other hand due to the presence of growth substrates surfacial pattern, in substrate and epitaxial layer
Interface at more light will be made from the reverse P faces in N faces, further to have impact on the light extraction efficiency of flip LED chips, such as again
Fruit flip-chip will then have a strong impact on the crystal mass of epitaxial layer without using patterned substrate, but with flat substrate.
The content of the invention
It is an object of the invention to provide a kind of two-sided patterned substrate for flip LED chips and preparation method thereof,
On the premise of LED epitaxial layer crystal mass is not influenceed, the luminosity of flip LED chips is improved.
In order to solve the above problems, the two-sided patterned substrate for flip LED chips of the invention, including：
Substrate with relative first surface and second surface；
First microlens structure of the array arrangement being formed on the first surface；And
Second microlens structure of the array arrangement being formed on the second surface；
Wherein, first microlens structure and the second microlens structure are symmetrical on the substrate.
Optionally, in the described two-sided patterned substrate for flip LED chips, the substrate is Sapphire Substrate
Or silicon carbide substrates.
Optionally, in the described two-sided patterned substrate for flip LED chips, first microlens structure and
The shape and size of second microlens structure are identical.
Optionally, in the described two-sided patterned substrate for flip LED chips, first microlens structure and
Second microlens structure is dome-type or semielliptical type structure.
The present invention also provides a kind of two-sided patterned substrate preparation method for flip LED chips, including：
One substrate is provided；
The first photoresist layer is formed on the first surface of the substrate；
First graphical photoresist is formed by exposed and developed technique；
Baking is carried out to the described first graphical photoresist and forms the first mask layer；
The first microlens structure of array arrangement is formed on the first surface of the substrate by etching technics；
The second photoresist layer is formed on the second surface of the substrate；
The substrate is irradiated using collimated light beam and forms second on the second surface of the substrate by developing process
Graphical photoresist；And
The second microlens structure of array arrangement is formed on the second surface of the substrate by etching technics；
Wherein, first microlens structure and the second microlens structure are symmetrical on the substrate.
Optionally, in the described two-sided patterned substrate preparation method for flip LED chips, the substrate is indigo plant
Jewel substrate or silicon carbide substrates.
Optionally, in the described two-sided patterned substrate preparation method for flip LED chips, described first is micro-
Mirror structure is identical with the shape and size of the second microlens structure.
Optionally, in the described two-sided patterned substrate preparation method for flip LED chips, described first is micro-
Mirror structure and the second microlens structure are dome-type or semielliptical type structure.
Optionally, in the described two-sided patterned substrate preparation method for flip LED chips, first figure
Change photoresist is cylindrical light photoresist platform.
Optionally, in the described two-sided patterned substrate preparation method for flip LED chips, the second graph
Change photoresist is cylindrical light photoresist platform.
Optionally, in the described two-sided patterned substrate preparation method for flip LED chips, first mask
The figure of layer is spherical crown shape.
Optionally, in the described two-sided patterned substrate preparation method for flip LED chips, second mask
The figure of layer is spherical crown shape.
Compared with prior art, the present invention provides a kind of two-sided patterned substrate, by two relative surfaces of substrate
It is upper that the microlens array with condenser effect is set, so that the LED substrate structure has condenser effect, so as to not influence
On the premise of LED epitaxial layer crystal mass, the luminosity and axial luminous brightness of flip LED chips are improved.
Further, the present invention produces the first microlens structure of array arrangement on the first surface of substrate first,
Subsequently in conjunction with the characteristics of the first microlens structure of array arrangement, realizing photoetching self-registered technology on substrate first surface, from
And on the premise of without mask plate and contraposition, the making of substrate second surface mask layer is realized, finally passes through etching technics again
The graphical of substrate second surface is realized, to form the second microlens structure of array arrangement on substrate second surface, is completed
The making of two-sided patterned substrate.
Brief description of the drawings
Referring to the drawings, according to following detailed description, the present invention can be more clearly understood.For the sake of clarity, scheme
In each layer of relative thickness and the relative size of given zone be not drawn to draw.In the accompanying drawings：
Fig. 1 is the cross-sectional view of substrate flat in the embodiment of the present invention；
Fig. 2 is the cross-sectional view formed in the embodiment of the present invention after the first photoresist layer；
Fig. 3 is the cross-sectional view formed in the embodiment of the present invention after the first graphical photoresist layer；
Fig. 4 is to the cross-sectional view after the first graphical photoresist layer baking in the embodiment of the present invention；
Fig. 5 is the cross-sectional view after the first microlens structure that array arrangement is formed in the embodiment of the present invention；
Fig. 6 is the cross-sectional view formed in the embodiment of the present invention after the second photoresist layer；
Fig. 7 is the cross-sectional view formed in the embodiment of the present invention after second graphical photoresist layer；
Fig. 8 is the cross-sectional view after being toasted in the embodiment of the present invention to second graphical photoresist layer；
Fig. 9 is the cross-sectional view of two-sided graphical LED substrate in the embodiment of the present invention.
Embodiment
In research mentioned for background technology the problem of, inventors herein have recognized that, it is necessary to according to upside-down mounting core
The particularity of piece, a kind of two-sided patterned substrate structure is designed, two-sided patterned substrate structure is used for flip LED chips
During making, the reflection of the light from epitaxial layer directive substrate on the premise of LED epitaxial layer crystal mass is not influenceed, can be reduced,
Increase its transmission, improve light extraction efficiency and luminosity.If it has furthermore been found that it is with the micro- of condenser effect by graphic designs
Lens array structure, it will further improve the axial luminous brightness of flip LED chips.
It is specific as shown in figure 9, a kind of two-sided patterned substrate for flip LED chips, including：With relative first
First lenticule knot of surface 10a and second surface 10b substrate 10, the array arrangement being formed on the first surface 10a
Second microlens structure 24 of structure 14 and the array arrangement being formed on the second surface 10b.Wherein, described first is micro-
Mirror structure 14 is identical with the shape and size of the second microlens structure 24, the lenticule knot of the first microlens structure 14 and second
Structure 24 is symmetrical on the substrate.For example, first microlens structure and the second microlens structure can refer to have
The dome-type or semielliptical type structure of condenser effect.The two-sided patterned substrate for flip LED chips, by substrate
Section shape is produced on 10 two surfaces as semicircle or half elliptic microlens structure, so that LED substrate structure has
There is condenser effect, so as on the premise of LED epitaxial layer crystal mass is not influenceed, improve the luminosity of flip LED chips
And axial luminous brightness.
Wherein, second microlens structure and the first microlens structure are symmetrical centered on substrate 10, i.e., and second
The line at the center of microlens structure and the center of the first microlens structure can further improve flip LED perpendicular to substrate 10
The luminosity of chip.
Below in conjunction with 1~9 pair of two-sided patterned substrate preparation method proposed by the present invention for flip LED chips of accompanying drawing
It is described in further detail.
As shown in Figure 1, there is provided a flat substrate 10, the substrate 10 include relative first surface 10a and the second table
Face 10b.The substrate 10 is preferably Sapphire Substrate, and certainly, according to specific needs, the substrate 10 can also be other types
Substrate, such as silicon carbide substrates.
As shown in Fig. 2 the first photoresist layer 11 is formed on the first surface 10a of the substrate 10.
As shown in figure 3, the first graphical photoresist 12, the first graphical light are produced by exposed and developed technique
Photoresist 12 is made up of some cylindrical light photoresist platforms, each cylindrical light photoresist platform parallel to substrate 10 first surface 10a and
The section in second surface 10b directions is circle, perpendicular to the section in first surface 10a and second surface the 10b direction of substrate 10
To be square.
As shown in figure 4, baking is carried out to the described first graphical photoresist 12 forms the first mask layer 13, the present embodiment
In, cylindrical light photoresist platform is turned into spherical crown shape photoresist.Understand, cylindrical light photoresist platform is in the Glass Transition higher than photoresist
At a temperature of, such as in the range of temperature is 120 DEG C~250 DEG C, because the effect of surface tension turns into spherical crown shape photoresist.Institute
State spherical crown shape photoresist and refer to dome-type or semielliptical type structure, i.e. first surface of the spherical crown shape photoresist parallel to substrate 10
It is circle with second surface direction section, is semicircle or half perpendicular to the first surface of substrate 10 and second surface direction section
Ellipse.
As shown in figure 5, be mask with first mask layer 13, by etching technics substrate 10 first surface 10a
Upper the first microlens structure 14 for forming array arrangement.In the present embodiment, using spherical crown shape photoresist as mask, perform inductively
Plasma etch process, until the spherical crown shape photoresist is etched completely away, so as on the first surface 10a of substrate 10
Form multiple first microlens structures.First microlens structure refers to the dome-type with condenser effect or semielliptical type knot
Structure.
As shown in fig. 6, the second photoresist layer 21 is formed on the second surface 10b of the substrate 10.
As shown in fig. 7, maskless lithography is carried out to second photoresist layer 21, i.e. mask plate is not needed, but directly
Using the first surface 10a of collimated light beam irradiation substrate 10, due to opening position beam energy corresponding with the first microlens structure
It is smaller, and the beam energy of other positions is larger, specifically, light in media as well by when, luminous energy is to decay due to absorbing
, attenuation is relevant with absorption coefficient and medium length, and energy is the same everywhere when collimated light beam is initial, different due to have passed through
Medium distance, with regard to otherwise varied, the light in the present invention at corresponding first microlens structure is absorbed to be over remaining luminous energy, and its
The light of remaining position can then make photoresist react, therefore, can be micro- with first on exposure energy second surface 10b by controlling
The photoresist of the relative position of lens arrangement is not exposed, and being then exposed for the photoresist of other positions, can be micro- according to first
The thickness of the size of lens arrangement and the second photoresist layer 21 accordingly adjusts exposure energy.
With continued reference to Fig. 7, second graphical photoresist is formed on the second surface 10b of substrate 10 by developing process
22.Specifically, after developing process, original place will be retained in the photoresist of the first microlens structure correspondence position, other
Removal is dissolved by the developing after the photo resist photosensitive of position.In the present embodiment, the graphical photoresist 22 is cylinder or connects
Nearly cylindrical light photoresist platform.
As shown in figure 8, baking is carried out to the second graphical photoresist 22 forms the second mask layer 23.The present embodiment
In, it is similar with the baking process of the first mask layer 13, cylindrical light photoresist platform is turned into spherical crown shape photoresist, equally, cylinder
Photoresist platform is under the glass transition temperature higher than photoresist, because the effect of surface tension turns into spherical crown shape photoresist.
As shown in figure 9, be mask with second mask layer 23, by etching technics substrate 10 second surface 10b
Upper the second microlens structure 24 for forming array arrangement.Specifically, it is mask with second mask layer 23, performs sensing coupling
Plasma etch process is closed, until second mask layer 23 is etched completely away, so as in the second surface 10b of substrate 10
It is upper to form multiple second microlens structures.Second microlens structure is dome-type or semielliptical type structure.Second lenticule
Structure and the first microlens structure are symmetrical centered on substrate, i.e. the center of the second microlens structure and the first lenticule
The line at the center of structure is perpendicular to substrate.
It is understood that if second graphical photoresist is the shape of subcylindrical photoresist platform, by toasting it
The second mask layer close to spherical crown shape is formed afterwards, and the second microlens structure of array arrangement can be also formed after over etching.It is actual
On, the present invention does not limit the shape of second graphical photoresist and the second mask layer, as long as second graphical photoresist passes through
Overbaking and etching can obtain the second microlens structure of array arrangement on substrate second surface.
The preparation method of LED substrate structure provided by the present invention is first by common process on the first surface of substrate
Produce the first microlens structure, subsequently in conjunction with the first microlens structure on substrate first surface the characteristics of, realize photoetching
Self-registered technology, so as on the premise of without mask plate and contraposition, realize the making of mask layer on substrate second surface, finally
The graphical of substrate second surface is realized by etching technics again, to form the second microlens structure on substrate second surface,
The making of LED substrate structure of the present invention is completed, technique is simple, workable, suitable for large-scale commercial production, meets upside-down mounting
The road of LED chip future development.
Although the present invention is described in detail by exemplary embodiment, those skilled in the art should
The understanding, exemplary embodiment above is merely to illustrate, the scope being not intended to be limiting of the invention.The skill of this area
Art personnel to above example it should be understood that can modify without departing from the scope and spirit of the present invention.This hair
Bright scope is defined by the following claims.
Claims (8)
- A kind of 1. two-sided patterned substrate preparation method for flip LED chips, it is characterised in that including：One substrate is provided；The first photoresist layer is formed on the first surface of the substrate；First graphical photoresist is formed by exposed and developed technique；Baking is carried out to the described first graphical photoresist and forms the first mask layer；The first microlens structure of array arrangement is formed on the first surface of the substrate by etching technics；The second photoresist layer is formed on the second surface of the substrate；Using the first surface of the collimated light beam irradiation substrate to carry out maskless lithography to second photoresist layer, and lead to Cross developing process and second graphical photoresist is formed on the second surface of the substrate；Baking is carried out to the second graphical photoresist and forms the second mask layer；AndThe second microlens structure of array arrangement is formed on the second surface of the substrate by etching technics；Wherein, first microlens structure and the second microlens structure are symmetrical on the substrate.
- 2. it is used for the two-sided patterned substrate preparation method of flip LED chips as claimed in claim 1, it is characterised in that institute It is Sapphire Substrate or silicon carbide substrates to state substrate.
- 3. it is used for the two-sided patterned substrate preparation method of flip LED chips as claimed in claim 1, it is characterised in that institute The shape and size for stating the first microlens structure and the second microlens structure are identical.
- 4. it is used for the two-sided patterned substrate preparation method of flip LED chips as claimed in claim 3, it is characterised in that institute It is dome-type or semielliptical type structure to state the first microlens structure and the second microlens structure.
- 5. it is used for the two-sided patterned substrate preparation method of flip LED chips as claimed in claim 1, it is characterised in that institute It is cylindrical light photoresist platform to state the first graphical photoresist.
- 6. it is used for the two-sided patterned substrate preparation method of flip LED chips as claimed in claim 1, it is characterised in that institute It is cylindrical light photoresist platform to state second graphical photoresist.
- 7. it is used for the two-sided patterned substrate preparation method of flip LED chips as claimed in claim 1, it is characterised in that institute The figure for stating the first mask layer is spherical crown shape.
- 8. it is used for the two-sided patterned substrate preparation method of flip LED chips as claimed in claim 1, it is characterised in that institute The figure for stating the second mask layer is spherical crown shape.
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| CN201410856044.4A CN104600169B (en) | 2014-12-31 | 2014-12-31 | Two-sided patterned substrate for flip LED chips and preparation method thereof |
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| CN201410856044.4A CN104600169B (en) | 2014-12-31 | 2014-12-31 | Two-sided patterned substrate for flip LED chips and preparation method thereof |
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| CN104600169B true CN104600169B (en) | 2018-01-23 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101567415A (en) * | 2009-06-04 | 2009-10-28 | 上海蓝光科技有限公司 | Manufacturing method for light-emitting diode chip substrate structure |
| CN102157654A (en) * | 2011-03-30 | 2011-08-17 | 重庆大学 | Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
| CN103219432A (en) * | 2012-01-18 | 2013-07-24 | 泰谷光电科技股份有限公司 | Light emitting diode provided with rough surface and manufacturing method thereof |
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2014
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101567415A (en) * | 2009-06-04 | 2009-10-28 | 上海蓝光科技有限公司 | Manufacturing method for light-emitting diode chip substrate structure |
| CN102157654A (en) * | 2011-03-30 | 2011-08-17 | 重庆大学 | Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
| CN103219432A (en) * | 2012-01-18 | 2013-07-24 | 泰谷光电科技股份有限公司 | Light emitting diode provided with rough surface and manufacturing method thereof |
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