CN209658225U - A kind of flip LED chips - Google Patents
A kind of flip LED chips Download PDFInfo
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- CN209658225U CN209658225U CN201920527635.5U CN201920527635U CN209658225U CN 209658225 U CN209658225 U CN 209658225U CN 201920527635 U CN201920527635 U CN 201920527635U CN 209658225 U CN209658225 U CN 209658225U
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Abstract
The utility model discloses a kind of flip LED chips, including substrate, the epitaxial layer on substrate, the transparency conducting layer on epitaxial layer, on transparency conducting layer transparent lth layer can change, set on the reflecting layer that can change on transparent lth layer, the insulating layer on reflecting layer and first electrode and second electrode；The transparent lth layer and the contact surface in reflecting layer of can change is convex surface, and the translucent material that can change transparent lth layer by refractive index greater than air is made.The utility model is upper between transparency conducting layer and reflecting layer to can change transparent lth layer provided with one layer, to improve the light extraction efficiency of chip.
Description
Technical field
The utility model relates to LED technology field more particularly to a kind of flip LED chips.
Background technique
LED (Light Emitting Diode, light emitting diode) be it is a kind of using Carrier recombination when release energy shape
At luminous semiconductor devices, LED chip is with power consumption is low, coloration is pure, the service life is long, small in size, the response time is fast, energy conservation and environmental protection
Equal many advantages.
Flip LED chips are the LED chip of this several years novel states, and major function is no encapsulation procedure, substantially save life
Efficiency is produced, can be applicable in high current, the LED of the small mini kenel of ultra micro may be implemented.
Flip LED chips are influenced on luminous efficacy due to being reflected by secondary optics, and light extraction efficiency is lower；In addition, firefly
Light powder is coated in LED chip, also because beam angle is big, is easy to appear the blue problem of side leakage, is caused light efficiency too low, photochromism is not
Pure problem.
Summary of the invention
Technical problem to be solved by the utility model is to provide a kind of flip LED chips, light extraction efficiency is high.
In order to solve the above-mentioned technical problem, the utility model provides a kind of flip LED chips, including substrate, is set to lining
Epitaxial layer on bottom, the transparency conducting layer on epitaxial layer, can change transparent lth layer, being set on transparency conducting layer
It can change the reflecting layer on transparent lth layer, the insulating layer on reflecting layer and first electrode and second electrode；
The contact surface that can change transparent lth layer and reflecting layer is convex surface or concave curved surface, described alterable saturating
Bright lth layer is made of translucent material.
As an improvement of the above scheme, the focal length that can change transparent lth layer with convex surface is located at substrate.
As an improvement of the above scheme, there is can change between transparent lth layer and transparency conducting layer for concave curved surface to be equipped with
Isolated insulation layer.
As an improvement of the above scheme, the material that can change transparent lth layer is SiO2、SiNx、TiO2、Ti2O5、
Al2O3、ITO、AZO、ZnO、MgF2One of with class diamond film DLC.
As an improvement of the above scheme, described to can change transparent lth layer as single or multi-layer structure.
It is as an improvement of the above scheme, described that can change transparent lth layer include the ITO being sequentially arranged on transparency conducting layer
Layer and SiO2Layer, wherein the refractive index > SiO of ITO layer2The refractive index of layer.
It is as an improvement of the above scheme, described that can change transparent lth layer include the ITO being sequentially arranged on transparency conducting layer
Layer, SiO2Layer and MgF2, wherein the refractive index > SiO of ITO layer2The refractive index > MgF of layer2The refractive index of layer.
As an improvement of the above scheme, the transparency conducting layer can change transparent lth layer equipped with one or several.
As an improvement of the above scheme, between the epitaxial layer and transparency conducting layer be equipped with contact layer, the contact layer by
Nickel oxide or tin indium oxide are made.
Implement the utility model, has the following beneficial effects:
A kind of flip LED chips provided by the utility model, epitaxial layer including substrate, on substrate are set to extension
Transparency conducting layer on layer can change transparent lth layer, set on can change on transparent lth layer on transparency conducting layer
Reflecting layer, the insulating layer on reflecting layer and first electrode and second electrode.The utility model is in transparency conducting layer and instead
It penetrates between layer and to be provided with one layer and can change transparent lth layer, the light that active layer issues is after reflecting layer is reflected, using can
Change the refraction of transparent lth layer, so that the big ray-collecting of light emitting angle is gathered, reduces light emitting angle, reduce the side of chip
Wall goes out light, and then improves the light extraction efficiency of chip.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the flip LED chips of the utility model embodiment 1；
Fig. 2 is the optically focused schematic diagram that can change transparent lth layer of the utility model embodiment 1；
Fig. 3 is the structural schematic diagram of the flip LED chips of the utility model embodiment 2；
Fig. 4 is the structural schematic diagram of the flip LED chips of the utility model embodiment 3；
Fig. 5 a is the schematic diagram that can change transparent lth layer first step of the utility model production embodiment 1；
Fig. 5 b is the schematic diagram that can change transparent lth layer second step of the utility model production embodiment 1；
Fig. 5 c is the schematic diagram that can change transparent lth layer third step of the utility model production embodiment 1；
Fig. 5 d is the schematic diagram that can change transparent lth layer four steps of the utility model production embodiment 1；
Fig. 5 e is the schematic diagram that can change transparent the 5th step of lth layer of the utility model production embodiment 1；
Fig. 5 f is the schematic diagram that can change transparent the 6th step of lth layer of the utility model production embodiment 1.
Specific embodiment
To keep the purpose of this utility model, technical solution and advantage clearer, this is actually made below in conjunction with attached drawing
The purpose of this utility model, technical solution and advantage are clearer, make further below in conjunction with attached drawing to the utility model
Detailed description.
Referring to Fig. 1, a kind of flip LED chips provided by the utility model, including substrate 10, the extension on substrate 10
Layer 20, the transparency conducting layer 40 on epitaxial layer 20, can change transparent lth layer 50, being set on transparency conducting layer 40
It can change the reflecting layer 60 on transparent lth layer 50, the insulating layer 70 on reflecting layer 60 and first electrode 81 and second
Electrode 82.
Specifically, the material of the utility model substrate 10 can be sapphire, silicon carbide or silicon, or other are partly led
Body material.Preferably, the substrate 10 of the utility model is Sapphire Substrate.
The epitaxial layer 20 includes the first semiconductor layer 21, active layer 22 and the second semiconductor being sequentially arranged on substrate 10
Layer 23.
First semiconductor layer 21 provided by the utility model is n type gallium nitride base, and the second semiconductor layer 23 is p-type nitridation
Gallium base, active layer 22 are MQW quantum well layer.
The material of the transparency conducting layer 40 is indium tin oxide, but not limited to this.The ratio of indium and tin in indium tin oxide
Example is (70-99): (1-30).Preferably, the ratio of indium and tin is 95:5 in indium tin oxide.Electrically conducting transparent is favorably improved in this way
The conductive capability of layer, prevents carrier from flocking together, and also improves the light extraction efficiency of chip.
As another preferred embodiment of the utility model, contact layer is equipped between the epitaxial layer 20 and transparency conducting layer 40
30, the contact layer 30 is made of nickel oxide or tin indium oxide.The contact layer 30 of the utility model does transverse direction for assist current
Extension.Because the utility model forms one layer over transparent conductive layer can change transparent lth layer 50, chip will affect
Current expansion ability, can change the influence of transparent lth layer to solve to increase, the utility model passes through in 20 He of epitaxial layer
One layer of contact layer 30 is set between transparency conducting layer 40.
The reflecting layer 60 of the utility model is metallic reflector.Specifically, the reflecting layer include the Ni layer set gradually,
Al layers and Ag layers, the reflecting layer of above structure, reflectivity can reach 99% or more.
It can change transparent lth layer it should be noted that described and be made by following preparation methods, the preparation method includes:
Transparency conducting layer is pre-processed；
Hyaline layer is formed on transparency conducting layer after pre-processing, the surface of the hyaline layer is plane；
Photoresist is coated on the hyaline layer；
The photoresist and hyaline layer are performed etching, exposed hyaline layer is made to form variation curved surface；
Photoresist is removed, formation can change transparent lth layer；
It is described to can change transparent lth layer coordinated insulation layer and reflecting layer, to adjust the angle of light scattering.
The transparent lth layer of the variation of the utility model will also cooperate the spy of its material other than needing to form variation curved surface
Property, it is just able to achieve the angle of adjustment light scattering, to reduce light emitting angle, or increases light emitting anger.The transparent lth layer of variation
The material that high by refractive index, light transmittance is high and extinction coefficient is small is needed to be made.
In order to reduce total reflection, improve light extraction efficiency, it is described can change transparent lth layer by refractive index be greater than air it is saturating
Luminescent material is made.
Preferably, the material that can change transparent lth layer is SiO2、SiNx、TiO2、Ti2O5、Al2O3、ITO、AZO、
ZnO、MgF2One or more of with class diamond film DLC.
Wherein, described to can change transparent lth layer as single or multi-layer structure.Preferably, described to can change transparent lth layer
Including the ITO layer being sequentially arranged on transparency conducting layer and SiO2Layer, wherein the refractive index > SiO of ITO layer2The refractive index of layer.More
Excellent, described to can change transparent lth layer include the ITO layer being sequentially arranged on transparency conducting layer, SiO2Layer and MgF2, wherein ITO
The refractive index > SiO of layer2The refractive index > MgF of layer2The refractive index of layer.It should be noted that adjustable by doping process
ITO layer, SiO2Layer and MgF2The refractive index size of layer, to meet the requirements.
The setting of transparent lth layer can change over transparent conductive layer due to the utility model, in order to improve can change it is transparent
The binding force of lth layer and transparency conducting layer, the bottom that can change transparent lth layer be ITO layer, the material of ITO layer and thoroughly
Bright conductive layer it is consistent, it is possible to reduce stress between the two.SiO2Layer can obtain between refractive index and thickness more preferably imitates
Fruit；MgF2Layer is easier to obtain lower refractive index, and thickness can be smaller, while having better light transmittance again.
The transparent lth layer 50 and the contact surface in reflecting layer 60 of can change is convex surface, i.e., the described convex surface direction
Reflecting layer side protrusion.Referring to fig. 2, Fig. 2 is the optically focused schematic diagram that the utility model can change transparent lth layer, and active layer issues
Light after reflecting layer is reflected, using the refraction that can change transparent lth layer, thus the ray-collecting that light emitting angle is big
Gather, reduce light emitting angle, the side wall for reducing chip goes out light, and then improves the light extraction efficiency of chip.According to lens imaging principle,
The transparent lth layer that can change of 1/u (object distance)+1/v (image distance)=1/f (focal length of lens), the utility model are equivalent to one thoroughly
Mirror, therefore play the effect of optically focused.
Preferably, the focal length that can change transparent lth layer is located at substrate.Since the side of flip LED chips can also go out light,
After being packaged into white light, since fluorescent powder is coated bad on flip LED chips side, it be easy to cause leakage blue, light loss is high.This
Utility model will vary the focal length setting of transparent lth layer on substrate, it is possible to reduce the side of chip goes out light, and it is blue to reduce leakage.
It should be noted that can change the curvature of transparent lth layer and can change the refractive index of transparent lth layer to chip
Light extraction efficiency wherein important role.Assuming that the radius of curvature that can change transparent lth layer is r, the material of transparent lth layer can change
The refractive index of material is nL, can change transparent lth layer focal length be f, wherein can change transparent lth layer radius of curvature r and can
The refractive index for changing the material of transparent lth layer is nLNeed to meet following relationship, r=(nL-1)f.The inverse of curvature is exactly bent
Rate radius r.If the refractive index that can change transparent lth layer is bigger, the radius of curvature that can change transparent lth layer is bigger, can be changed
The curvature for changing transparent lth layer is smaller.
It is described to can change transparent lth layer 50 and reflecting layer 60 as another embodiment of the utility model referring to Fig. 3
Contact surface is concave curved surface, i.e., the described concave curved surface is recessed towards reflecting layer side.It can change transparent song with concave curved surface
The light that surface layer 50 can issue active layer carries out rescattering, to increase the light emitting angle of chip.
When it is described to can change transparent lth layer 50 and the contact surface in reflecting layer 60 be concave curved surface when, not due to etch thicknesses
One, transparency conducting layer 40 and the sheet resistance that can change between transparent lth layer 50 can be very high, to influence the photoelectric properties of chip.
Therefore, described can change between transparent lth layer 50 and the transparency conducting layer 40 is additionally provided with isolated insulation layer 41, saturating to reduce
Bright conductive layer and it can change the sheet resistance between transparent lth layer.
When the contact surface that can change transparent lth layer and reflecting layer is concave curved surface, the pre-processing includes:
One layer of isolated insulation layer 41 is formed on transparency conducting layer 40；
Using chemical attack plus the method for exposure mask, the isolated insulation layer is etched, is formed on isolated insulation layer
Indentation.
Wherein, described to can change transparent lth layer and be formed on isolated insulation layer.
The isolated insulation layer 41 of the utility model is made of insulating material.Preferably, the isolated insulation layer is by SiO2With/
Or SiNx is made.
It should be noted that the transparency conducting layer, which is equipped with one, can change transparent lth layer.Referring to Fig. 3, it is described can
Change transparent lth layer and forms a variation curved surface or multiple variation curved surfaces.It is described to can change transparent lth layer and form multiple variations
The optically focused or light-dispersing effect of curved surface are due to a variation curved surface, and the thickness that can change transparent lth layer can be smaller, so that core
The volume of piece can be smaller.
The insulating layer 70 of the utility model is made of insulating material.Preferably, the insulating layer is by SiO2And/or SiNx system
At.Metal of the insulating layer of the utility model in blocking reflected layer migrates.In order to improve the energy of barrier metal migration
Power, the utility model insulating layer include multilayered structure.Preferably, the insulating layer includes SiO2Layer, SiNx layer and SiO2Layer.
In order to subsequent convenient for forming electrode, the surface of the utility model insulating layer is plane.Preferably, the insulating layer
With a thickness of 8000 angstroms or more.When the thickness of insulating layer is greater than 8000 angstroms, insulating layer can just form plane, and insulating layer is anti-
Metal transfer ability is stronger.More preferably, the insulating layer with a thickness of 8000-10000 angstroms.
It should be noted that the first electrode 81 and second electrode 82 are arranged on insulating layer 80, wherein first electrode
81 and first semiconductor layer be conductively connected, second electrode 82 and transparency conducting layer 40 are conductively connected.
Correspondingly, the utility model additionally provides a kind of production method of flip LED chips described above, including following
Step:
S1, epitaxial layer is formed on the substrate；
S2, transparency conducting layer is formed on epitaxial layer；
S3, transparency conducting layer is pre-processed；
S4, referring to Fig. 5 a, hyaline layer 51 is formed on the transparency conducting layer 40 using vapor deposition or magnetron sputtering technique.
S5, referring to Fig. 5 b, photoresist 52 is coated on the hyaline layer 51.
S6, the photoresist and hyaline layer are performed etching, exposed hyaline layer is made to form variation curved surface；
S7, removal photoresist, formation can change transparent lth layer；
S8, one layer of metallic reflector is formed on it can change transparent lth layer using vapor deposition or magnetron sputtering technique；
S9, a layer insulating is formed on reflecting layer using vapor deposition or magnetron sputtering technique；
S10, first electrode and second electrode is formed on the insulating layer, wherein first electrode and the first semiconductor layer are conductive
Connection, second electrode and transparency conducting layer are conductively connected.
When the contact surface that can change transparent lth layer and reflecting layer is convex surface, step (S6) includes:
Referring to Fig. 5 c, the photoresist 52 is performed etching, the photoresist 52 is made to form trapezium structure；
Referring to Fig. 5 d, surface and side wall to trapezium structure photoresist 52 continue to etch, by the transparent of 52 edge of photoresist
Layer 51 exposes；
Referring to Fig. 5 e, trapezium structure photoresist 52 and exposed hyaline layer 51 are continued to etch, increases hyaline layer 51
Exposed area, and exposed hyaline layer is made to form variation curved surface；
Referring to Fig. 5 f, trapezium structure photoresist 52 and exposed hyaline layer 51 are continued to etch, remove photoresist 52,
And it is formed and can change transparent lth layer 50.
Specifically, etching photoresist and hyaline layer using etching gas.The etching gas is Cl2、BCl3In Ar
One or more, in order to reach etching effect, the flow velocity of etching gas is 1400-1700A/min.If the flow velocity of etching gas is low
In 1400A/min, then the curvature that can change transparent lth layer is lower, it is difficult to achieve the effect that optically focused, if the flow of etching gas
Greater than 1700A/min, then photoresist temperature is excessively high, is easy to happen carbonization.
When the contact surface that can change transparent lth layer and reflecting layer is concave curved surface, step (S3) includes:
One layer of isolated insulation layer is formed over transparent conductive layer；
Using chemical attack plus the method for exposure mask, the isolated insulation layer is etched, is formed on isolated insulation layer
Indentation.
When the contact surface that can change transparent lth layer and reflecting layer is concave curved surface, step (S6) includes:
Using chemical attack plus the method for exposure mask, the photoresist and hyaline layer are etched along the indentation,
It is formed and can change transparent lth layer with concave curved surface.
Above disclosed is only a kind of preferred embodiment of the utility model, certainly cannot be practical to limit with this
Novel interest field, therefore equivalent variations made according to the claim of the utility model still belong to what the utility model was covered
Range.
Claims (9)
1. a kind of flip LED chips, which is characterized in that including the substrate, epitaxial layer on substrate, saturating on epitaxial layer
Bright conductive layer, on transparency conducting layer can change transparent lth layer, set on the reflecting layer that can change on transparent lth layer, set
In insulating layer and first electrode and second electrode on reflecting layer；
The contact surface that can change transparent lth layer and reflecting layer is convex surface or concave curved surface, described to can change transparent song
Surface layer is made of translucent material.
2. flip LED chips as described in claim 1, which is characterized in that can change transparent lth layer with convex surface
Focal length be located at substrate.
3. flip LED chips as described in claim 1, which is characterized in that can change transparent lth layer with concave curved surface
Isolated insulation layer is equipped between transparency conducting layer.
4. flip LED chips as described in any one of claims 1-3, which is characterized in that described to can change transparent lth layer
Material is SiO2、SiNx、TiO2、Ti2O5、Al2O3、ITO、AZO、ZnO、MgF2One of with class diamond film DLC.
5. flip LED chips as claimed in claim 4, which is characterized in that described to can change transparent lth layer as single layer or more
Layer structure.
6. flip LED chips as claimed in claim 5, which is characterized in that described to can change transparent lth layer including successively setting
In ITO layer and SiO on transparency conducting layer2Layer, wherein the refractive index > SiO of ITO layer2The refractive index of layer.
7. flip LED chips as claimed in claim 5, which is characterized in that described to can change transparent lth layer including successively setting
In the ITO layer on transparency conducting layer, SiO2Layer and MgF2, wherein the refractive index > SiO of ITO layer2The refractive index > MgF of layer2Layer
Refractive index.
8. flip LED chips as described in claim 1, which is characterized in that the transparency conducting layer is equipped with one or several
It can change transparent lth layer.
9. flip LED chips as described in claim 1, which is characterized in that be equipped between the epitaxial layer and transparency conducting layer
Contact layer, the contact layer are made of nickel oxide or tin indium oxide.
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| CN201920527635.5U CN209658225U (en) | 2019-04-16 | 2019-04-16 | A kind of flip LED chips |
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| CN201920527635.5U CN209658225U (en) | 2019-04-16 | 2019-04-16 | A kind of flip LED chips |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034220A (en) * | 2019-04-16 | 2019-07-19 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
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2019
- 2019-04-16 CN CN201920527635.5U patent/CN209658225U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034220A (en) * | 2019-04-16 | 2019-07-19 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN110034220B (en) * | 2019-04-16 | 2024-06-25 | 佛山市国星半导体技术有限公司 | Flip LED chip and manufacturing method thereof |
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