CN104538514A - Reverse LED chip structure and manufacturing method thereof - Google Patents
Reverse LED chip structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN104538514A CN104538514A CN201410856042.5A CN201410856042A CN104538514A CN 104538514 A CN104538514 A CN 104538514A CN 201410856042 A CN201410856042 A CN 201410856042A CN 104538514 A CN104538514 A CN 104538514A
- Authority
- CN
- China
- Prior art keywords
- substrate
- electrode
- microlens structure
- flip led
- epitaxial loayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 184
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 53
- 239000010410 layer Substances 0.000 claims description 50
- 238000000407 epitaxy Methods 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 5
- 238000003491 array Methods 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention provides a reverse LED chip structure. A two-sided patterned substrate is adopted, and microlens arrays with the light condensation effect are arranged on the two opposite surfaces of the two-sided patterned substrate, so that the light-emitting brightness and the axial light-emitting brightness of a reverse LED chip are improved on the premise that the crystalline quality of an LED epitaxial layer is not affected. The invention provides a manufacturing method of the reverse LED chip structure. A first microlens structure arranged in an array is manufactured on the first surface of the substrate, the photoetching self-alignment process is achieved through light emission of the LED chip and in combination with the characteristics of the first microlens structure arranged in the array on the first surface of the substrate in the follow-up process, a mask layer on the second surface of the substrate is manufactured on the premise that no mask plate or alignment is needed, finally, patterning of the second surface of the substrate is achieved through the etching process, a second microlens structure arranged in an array is formed on the second surface of the substrate, and the reverse LED chip with the two-sided patterned substrate is manufactured.
Description
Technical field
The invention belongs to semiconductor optoelectronic chip manufacturing field, particularly relate to a kind of flip LED chips structure and preparation method thereof.
Background technology
GaN base LED is since early 1990s commercialization, and through the development of twenties years, its structure was tending towards ripe and perfect, can meet the demand of people's present stage to decorative lamp; But will replace conventional light source completely and enter lighting field, the raising of luminosity is but the endless pursuit of LED industry researcher.Under the prerequisite of the limited space that can improve at internal quantum efficiency (close to 100%), the researcher of LED industry has turned to external quantum efficiency sight, propose the multiple technologies scheme and method that can improve light extraction efficiency, such as patterned substrate technology, sidewall coarsening technique, DBR technology, optimize electrode structure, on substrate or nesa coating, make 2 D photon crystal etc.Wherein patterned substrate most effect, especially since 2010, in the excitation of the various policy of government with under promoting, no matter be that the dry method patterned substrate technology of cone structure or the wet method pattern substrate technology of Pyramid are obtained for development at full speed, its technique is very ripe, and instead of flat substrate completely in 2012, become the main flow substrate of LED chip, make the crystal structure of LED and luminosity be obtained for revolutionary raising.
From structure, LED chip have LED chip and flip LED chips point, for positive cartridge chip, patterned substrate technology utilizes PSS figure to be reflected back from the light of luminous zone directive substrate by not coplanar, improve the escape probability of light, improve the light extraction efficiency of chip.But, for flip-chip, just do not need light to reflect back, but need Transmission light as much as possible through substrate.
Compare LED chip, flip-chip can solve the difficult problem of heat radiation, in the Sapphire Substrate that business-like LED chip grows mostly, then be fixed on the package support, such LED chip is mainly through heat loss through conduction, and Sapphire Substrate is due to thicker, so heat is difficult to derive, heat accumulation can affect chip reliability at chip, increases light decay and reduces the chip life-span; The problem that light efficiency is low, electrode is in the light, and can reduce the bright dipping of chip; Current crowding can increase the voltage of chip, and these all can reduce the light efficiency of chip; The problem that encapsulation is complicated, the voltage of single led chip is about 3V, therefore needs transformation or encapsulation is connected, and each of which increases the difficulty of encapsulation and application, and technology difficulty strengthens, and makes the less reliable of whole chip.
More than having so, the inverted structure of advantage will become future and can significantly improve the structure of the most promising GaN base LED of LED luminosity, but the LED chip of inverted structure is in the bright dipping of N face, on the one hand because sapphire refractive index is lower than the refractive index of gallium nitride, so total reflection can be there is on sapphire and substrate interface in the light that epitaxial loayer shoots out, cause more light out, light extraction efficiency can not be reduced; On the other hand due to the existence of growth substrates surfacial pattern, the more light reverse P face from N face again will be made at the interface place of substrate and epitaxial loayer, have impact on the light extraction efficiency of flip LED chips further, if flip-chip does not use patterned substrate, but with smooth substrate, then will have a strong impact on the crystal mass of epitaxial loayer.
Summary of the invention
The object of the present invention is to provide a kind of flip LED chips structure and preparation method thereof, under the prerequisite not affecting LED epitaxial loayer crystal mass, improve the luminosity of flip LED chips.
In order to solve the problem, the invention provides a kind of flip LED chips structure, comprising:
There is relative first surface and the substrate of second surface, first microlens structure of array arrangement on the first surface being formed at described substrate, second microlens structure of array arrangement on the second surface being formed at described substrate, described first microlens structure and the second microlens structure symmetrical about described substrate;
Be formed at the epitaxial loayer on described first surface, described epitaxial loayer comprises the N-type epitaxy layer, active layer and the P type epitaxial loayer that are formed successively;
To be formed in described epitaxial loayer and to expose the groove of described N-type epitaxy layer;
Be formed at the side wall protective layer on the sidewall of described groove;
Be formed at the P electrode on described P type epitaxial loayer, be formed at the N electrode in described groove;
Flip LED substrate, comprise multiple first substrate spaced apart and second substrate and the insulation division board for the insulate described first substrate of isolation and second substrate, first substrate is all electrically connected with positive wire, second substrate is all electrically connected with a negative wire, described first substrate corresponds to described P electrode, described second substrate corresponds to described N electrode, and described insulation division board inserts the gap between described P electrode and N electrode.
Optionally, in described flip LED chips structure, described substrate is Sapphire Substrate or silicon carbide substrates.
Optionally, in described flip LED chips structure, described first microlens structure is identical with the shape and size of the second microlens structure.
Optionally, in described flip LED chips structure, described first microlens structure and the second microlens structure are dome-type or semielliptical type structure.
The present invention also provides a kind of manufacture method of flip LED chips structure, comprising:
There is provided one to have relative first surface and the substrate of second surface, the first surface of described substrate is formed with the first microlens structure of array arrangement;
The first surface of described substrate forms epitaxial loayer, and described epitaxial loayer comprises the N-type epitaxy layer, active layer and the P type epitaxial loayer that are formed successively;
In described epitaxial loayer, form the groove of the described N-type epitaxy layer of multiple exposure, and form side wall protective layer on the sidewall of described groove;
Described P type epitaxial loayer forms P electrode, in described groove, forms N electrode, to form LED chip;
One flip LED substrate is provided, described flip LED substrate comprises multiple first substrate spaced apart and second substrate, described first substrate and second substrate are by insulation division board insulation isolation, described first substrate is all electrically connected with positive wire, and described second substrate is all electrically connected with a negative wire;
By described LED chip face-down bonding on described flip LED substrate, described first substrate corresponds to described P electrode, and described second substrate corresponds to described N electrode, and described insulation division board inserts the gap between described P electrode and N electrode;
The second surface of described substrate forms photoresist layer, and make described LED chip luminous by described positive wire and negative wire to described LED chip energising, thus maskless lithography and developing process are carried out to described photoresist layer, the second surface of substrate forms graphical photoresist;
Baking is carried out to described graphical photoresist and forms mask layer; And
Etch described substrate to form the second microlens structure of array arrangement on the second surface of substrate, described first microlens structure and the second microlens structure symmetrical about described substrate.
Optionally, in the manufacture method of described flip LED chips structure, described substrate is Sapphire Substrate or silicon carbide substrates.
Optionally, in the manufacture method of described flip LED chips structure, described first microlens structure is identical with the shape and size of the second microlens structure.
Optionally, in the manufacture method of described flip LED chips structure, described first microlens structure and the second microlens structure are dome-type or semielliptical type structure.
Optionally, in the manufacture method of described flip LED chips structure, described graphical photoresist is cylindrical photoresist platform.
Optionally, in the manufacture method of described flip LED chips structure, the figure of described mask layer is spherical crown shape.
Compared with prior art, the invention provides a kind of flip LED chips structure, described flip LED chips adopts two-sided patterned substrate, the surface that described two-sided patterned substrate two is relative is arranged the microlens array with optically focused effect, thus under the prerequisite not affecting LED epitaxial loayer crystal mass, improve the luminosity of flip LED chips and axial luminosity.In flip LED chips construction manufacturing method of the present invention, first on the first surface of substrate, produce the first microlens structure of array arrangement, follow-up again in conjunction with the feature of the first microlens structure of array arrangement on substrate first surface, photoetching self-registered technology is realized by LED chip self luminescence, thus under the prerequisite without the need to mask plate and contraposition, realize the making of substrate second surface mask layer, the graphical of substrate second surface is realized again by etching technics, to form the second microlens structure of array arrangement on substrate second surface, complete the flip LED chips with two-sided patterned substrate to make.
Accompanying drawing explanation
With reference to accompanying drawing, according to detailed description below, clearly the present invention can be understood.For the sake of clarity, in figure, the relative thickness of each layer and the relative size of given zone are not drawn in proportion.In the accompanying drawings:
Fig. 1 ~ 12 are the generalized sections in the embodiment of the present invention in flip LED chips structure fabrication process;
Figure 13 is the schematic flow sheet of flip LED chips construction manufacturing method in the embodiment of the present invention.
Embodiment
In the research of the problem mentioned for background technology, present inventor finds, be necessary the particularity according to flip-chip, two-sided patterned substrate structure is used for the making of flip LED chips, this can under the prerequisite not affecting LED epitaxial loayer crystal mass, reduce the reflection from the light of epitaxial loayer directive substrate, increase its transmission, improve light extraction efficiency and luminosity.Further discovery, if be the microlens array structure with optically focused effect by graphic designs, will improve the axial luminosity of flip LED chips further.
Specifically as shown in figure 13, composition graphs 1 to Figure 12, a kind of flip LED chips structure, comprising:
There is the substrate 10 of relative first surface and second surface;
Be formed at the first microlens structure 11 of array arrangement on described first surface and be formed at the second microlens structure 12 of array arrangement on described second surface, described first microlens structure 11 is identical with the shape and size of the second microlens structure 12, and described first microlens structure 11 and the second microlens structure 12 symmetrical about described substrate 10;
Be formed at the epitaxial loayer on described first surface, described epitaxial loayer comprises the N-type epitaxy layer 21, active layer 22 and the P type epitaxial loayer 23 that are formed successively;
To be formed in described epitaxial loayer and the groove 30 exposing described N-type epitaxy layer 21 and the side wall protective layer 40 be formed on the sidewall of described groove 30;
The N electrode 52 being formed at the P electrode 51 on P type epitaxial loayer 23 and being formed in groove 30, has a gap between described P electrode 51 and N electrode 52;
Flip LED substrate 60, comprise multiple first substrate 61 spaced apart and second substrate 62 and the insulation division board 63 for the insulate described first substrate 61 of isolation and second substrate 62, multiple first substrate 61 is all electrically connected with positive wire, multiple second substrate 62 is all electrically connected with negative wire, described first substrate 61 corresponds to described P electrode 51, described second substrate 62 corresponds to described N electrode 52, and described insulation division board 63 inserts the gap between P electrode 51 and N electrode 52.
Described first microlens structure 11 and the second microlens structure 12 refer to the dome-type or semielliptical type structure with optically focused effect, described flip LED chips adopts two-sided patterned substrate, and the relative surface of described two-sided patterned substrate two is arranged the microlens array with optically focused effect, thus under the prerequisite not affecting LED epitaxial loayer crystal mass, improve the luminosity of flip LED chips and axial luminosity.
Wherein, described second microlens structure and the first microlens structure symmetrical centered by substrate 10, namely the line at the center of the second microlens structure and the center of the first microlens structure is perpendicular to substrate 10, can further improve the luminosity of flip LED chips.
The present invention also provides a kind of manufacture method of flip LED chips structure, comprising:
S1: provide one to have relative first surface and the substrate of second surface, the first surface of described substrate is formed with the first microlens structure of array arrangement;
S2: form epitaxial loayer on the first surface of described substrate, described epitaxial loayer comprises the N-type epitaxy layer, active layer and the P type epitaxial loayer that are formed successively;
S3: the groove forming the described N-type epitaxy layer of multiple exposure in described epitaxial loayer, and side wall protective layer is formed on the sidewall of described groove;
S4: form P electrode on described P type epitaxial loayer, form N electrode in described groove, to complete the making of LED chip;
S5: a flip LED substrate is provided, described flip LED substrate comprises multiple first substrate spaced apart and second substrate, described first substrate and second substrate are by insulation division board insulation isolation, multiple first substrate is all electrically connected with positive wire, and multiple second substrate is all electrically connected with a negative wire;
S6: by described LED chip face-down bonding on described flip LED substrate, described first substrate corresponds to described P electrode, and described second substrate corresponds to described N electrode;
S7: form photoresist layer on the second surface of described substrate, and make described LED chip luminous by described positive wire and negative wire to described LED chip energising, thus maskless lithography and developing process are carried out to described photoresist layer, the second surface of substrate forms graphical photoresist;
S8: baking is carried out to described graphical photoresist and forms mask layer;
S9: etch described substrate to form the second microlens structure of array arrangement on the second surface of substrate, described first microlens structure is identical with the shape and size of the second microlens structure, and described first microlens structure and the second microlens structure symmetrical about described substrate.
Manufacture method below in conjunction with the flip LED chips of accompanying drawing 1 ~ 12 pair of the present invention's proposition is described in further detail.
As shown in Figure 1, in step sl, provide the substrate 10 that is smooth, described substrate 10 comprises relative first surface and second surface, the first surface of described substrate 10 is formed with the first microlens structure 11 of array arrangement.Described substrate 10 is preferably Sapphire Substrate, and certainly, according to specific needs, described substrate 10 can also be other types substrate, such as silicon carbide substrates.
In the present embodiment, the first microlens structure 11 of array arrangement is formed by such as under type: first, the first surface of substrate 10 forms photoresist layer; Then, graphical photoresist is produced by exposure and developing process, described graphical photoresist is made up of some cylindrical photoresist platforms, each cylindrical photoresist platform is parallel to the first surface of substrate 10 and the cross section in second surface direction is circle, is square perpendicular to the first surface of substrate 10 and the cross section in second surface direction.Then, baking is carried out to described graphical photoresist and forms mask layer, make cylindrical photoresist platform become spherical crown shape photoresist.Known, cylindrical photoresist platform is higher than under the glass transition temperature of photoresist, such as in the scope that temperature is 120 DEG C ~ 250 DEG C, because capillary effect becomes spherical crown shape photoresist, described spherical crown shape photoresist refers to dome-type or semielliptical type structure, that is, spherical crown shape photoresist is parallel to the first surface of substrate 10 and cross section, second surface direction for circular, be semicircle or half elliptic perpendicular to the first surface of substrate 10 and cross section, second surface direction; Next, with described mask layer for mask, perform sense coupling technique, until described spherical crown shape photoresist is etched completely away, thus on the first surface of substrate 10, forming multiple first microlens structure 11, described first microlens structure 11 refers to the dome-type or semielliptical type structure with optically focused effect.
As shown in Figure 2, in step s 2, the first surface of described substrate 10 forms epitaxial loayer, described epitaxial loayer comprises N-type epitaxy layer 21, active layer 22 and P type epitaxial loayer 23 on the first surface being formed at substrate 10 successively.
As shown in Figure 3 and Figure 4, in step s3, in multiple presumptive areas one of described epitaxial loayer, form multiple groove 30 by photoetching and etching technics, described groove 30 exposes described N-type epitaxy layer 21.Further, the P type epitaxial loayer 23 in described groove 30 and active layer 22 are removed completely, and N-type epitaxy layer 21 is removed a part.On the sidewall of groove 30, form side wall protective layer 40 by deposition, photoetching, etching technics again, in preferred version, described side wall protective layer 40 extends to the edge of P type epitaxial loayer 23.The material of described side wall protective layer 40 is such as silicon dioxide.
As shown in Figure 5, in step s 4 which, on described P type epitaxial loayer 23, form P electrode 51 by evaporation, sputtering or spraying coating process, in described groove 30, form N electrode 52, between described P electrode 51 and N electrode 52, there is gap, to complete the making of LED chip.Preferably, can also form expansion electrode between described P electrode 51 and P type epitaxial loayer 23, the material of described expansion electrode is ITO.The material of described P electrode 51 and N electrode 52 is one or more in chromium, titanium, aluminium, nickel, silver, gold.
As shown in Figure 6, in step s 5, one flip LED substrate 60 is provided, described flip LED substrate 60 comprises multiple first substrate 61 spaced apart and second substrate 62, described first substrate 61 and second substrate 62 are insulated by insulation division board 63 and isolate, multiple first substrate 61 is all electrically connected with positive wire, and multiple second substrate 62 is all electrically connected with a negative wire.
As shown in Figure 7, in step s 6, by described LED chip face-down bonding on described flip LED substrate 60, described first substrate 61 corresponds to described P electrode 51, and described second substrate 62 corresponds to described N electrode 52.In preferred version, as shown in Figure 8, thinning described substrate 10 is to reduce device volume.
As shown in Figure 9 and Figure 10, in the step s 7, the second surface of described substrate 10 forms photoresist layer 71, and by described positive wire and negative wire to LED chip energising and then make described LED chip luminous, thus maskless lithography and developing process are carried out to described photoresist layer 71, namely, do not need mask plate, LED chip luminescence is directly utilized to expose photoresist layer 71, first surface due to substrate 10 has the first microlens structure 11 of array arrangement, make light arrive photoresist layer 71 different through distance, first microlens structure 11 place is longer compared to other position light distance, light absorption is fallen, and the second photoresist light distance arrived between the first microlens structure is the shortest, photoresist is all developed, this is because when light passes through in media as well, luminous energy will be decayed owing to absorbing, attenuation is relevant with absorption coefficient and medium length, when collimated light beam is initial, energy is the same everywhere, owing to have passed through different medium distances, remaining luminous energy is just distinguished to some extent, in the present invention, the light at corresponding first microlens structure place is over by absorption, the light of all the other positions can then make photoresist react, therefore, luminescence by controlling LED chip luminescence makes the photoresist of position relative with the first microlens structure on second surface not be exposed, then being exposed of the photoresist of other positions, can according to the corresponding adjustment exposure energy of thickness of the size of the first microlens structure and photoresist layer 71.Then, on the second surface of substrate 10, graphical photoresist 72 is formed by developing process.Specifically, after developing process, will original place be retained in the whole or a part of of photoresist of the first microlens structure correspondence position, after the photoresist of other positions is photosensitive, be dissolved by the developing removal.In the present embodiment, described graphical photoresist 72 is cylindrical or the photoresist platform of subcylindrical.
As shown in figure 11, in step s 8, baking is carried out to described graphical photoresist 72 and forms mask layer 73, cylindrical photoresist platform is made to become spherical crown shape photoresist, cylindrical photoresist platform higher than under the glass transition temperature of photoresist, because capillary effect becomes spherical crown shape or the photoresist close to spherical crown shape.In fact, the present invention does not limit the shape of graphical photoresist 72 and mask layer 73, as long as patterned photoresist can obtain the second microlens structure through overbaking and etching.
As shown in figure 12, in step s 9, with described mask layer 73 for mask, on the second surface of substrate 10, the second microlens structure 12 of array arrangement is formed by etching technics.Specifically, with described mask layer 73 for mask, perform sense coupling technique, until described mask layer 73 is etched completely away, thus on the second surface of substrate 10, form multiple second microlens structure 12.Described second microlens structure 12 is dome-type or semielliptical type structure.Second microlens structure 12 and the first microlens structure 11 symmetrical centered by substrate, that is, the line at the center of the second microlens structure 12 and the center of the first microlens structure 11 is perpendicular to substrate 10.
The present invention produces the first microlens structure of array arrangement on the first surface of substrate, follow-up again in conjunction with the feature of the first microlens structure of array arrangement on substrate first surface, luminous by LED chip self, realize photoetching self-registered technology, thus under the prerequisite without the need to mask plate and contraposition, realize the making of substrate second surface mask layer, last the second microlens structure being formed array arrangement again by etching technics on substrate second surface, provided by the present invention there is two-sided patterned flip LED chips structure to be formed, technique is simple, workable, be suitable for large-scale commercial to produce, meet the road of flip LED chips future development.
Although by exemplary embodiment to invention has been detailed description, it should be appreciated by those skilled in the art, above exemplary embodiment is only to be described, instead of in order to limit the scope of the invention.It should be appreciated by those skilled in the art, can without departing from the scope and spirit of the present invention, above embodiment be modified.Scope of the present invention is limited by claims.
Claims (10)
1. a flip LED chips structure, is characterized in that, comprising:
There is relative first surface and the substrate of second surface, first microlens structure of array arrangement on the first surface being formed at described substrate, second microlens structure of array arrangement on the second surface being formed at described substrate, described first microlens structure and the second microlens structure symmetrical about described substrate;
Be formed at the epitaxial loayer on described first surface, described epitaxial loayer comprises the N-type epitaxy layer, active layer and the P type epitaxial loayer that are formed successively;
To be formed in described epitaxial loayer and to expose the groove of described N-type epitaxy layer;
Be formed at the side wall protective layer on the sidewall of described groove;
Be formed at the P electrode on described P type epitaxial loayer, be formed at the N electrode in described groove;
Flip LED substrate, comprise multiple first substrate spaced apart and second substrate and the insulation division board for the insulate described first substrate of isolation and second substrate, first substrate is all electrically connected with positive wire, second substrate is all electrically connected with a negative wire, described first substrate corresponds to described P electrode, described second substrate corresponds to described N electrode, and described insulation division board inserts the gap between described P electrode and N electrode.
2. flip LED chips structure as claimed in claim 1, it is characterized in that, described substrate is Sapphire Substrate or silicon carbide substrates.
3. flip LED chips structure as claimed in claim 1, it is characterized in that, described first microlens structure is identical with the shape and size of the second microlens structure.
4. flip LED chips structure as claimed in claim 1, it is characterized in that, described first microlens structure and the second microlens structure are dome-type or semielliptical type structure.
5. a manufacture method for flip LED chips structure, is characterized in that, comprising:
There is provided one to have relative first surface and the substrate of second surface, the first surface of described substrate is formed with the first microlens structure of array arrangement;
The first surface of described substrate forms epitaxial loayer, and described epitaxial loayer comprises the N-type epitaxy layer, active layer and the P type epitaxial loayer that are formed successively;
In described epitaxial loayer, form the groove of the described N-type epitaxy layer of multiple exposure, and form side wall protective layer on the sidewall of described groove;
Described P type epitaxial loayer forms P electrode, in described groove, forms N electrode, to form LED chip;
One flip LED substrate is provided, described flip LED substrate comprises multiple first substrate spaced apart and second substrate, described first substrate and second substrate are by insulation division board insulation isolation, described first substrate is all electrically connected with positive wire, and described second substrate is all electrically connected with a negative wire;
By described LED chip face-down bonding on described flip LED substrate, described first substrate corresponds to described P electrode, and described second substrate corresponds to described N electrode, and described insulation division board inserts the gap between described P electrode and N electrode;
The second surface of described substrate forms photoresist layer, and make described LED chip luminous by described positive wire and negative wire to described LED chip energising, thus maskless lithography and developing process are carried out to described photoresist layer, the second surface of substrate forms graphical photoresist;
Baking is carried out to described graphical photoresist and forms mask layer; And
Etch described substrate to form the second microlens structure of array arrangement on the second surface of substrate, described first microlens structure and the second microlens structure symmetrical about described substrate.
6. the manufacture method of flip LED chips structure as claimed in claim 5, it is characterized in that, described substrate is Sapphire Substrate or silicon carbide substrates.
7. the manufacture method of flip LED chips structure as claimed in claim 5, it is characterized in that, described first microlens structure is identical with the shape and size of the second microlens structure.
8. the manufacture method of flip LED chips structure as claimed in claim 7, it is characterized in that, described first microlens structure and the second microlens structure are dome-type or semielliptical type structure.
9. the manufacture method of flip LED chips structure as claimed in claim 5, it is characterized in that, described graphical photoresist is cylindrical photoresist platform.
10. the manufacture method of flip LED chips structure as claimed in claim 5, it is characterized in that, the figure of described mask layer is spherical crown shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410856042.5A CN104538514B (en) | 2014-12-31 | 2014-12-31 | Flip LED chips structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410856042.5A CN104538514B (en) | 2014-12-31 | 2014-12-31 | Flip LED chips structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104538514A true CN104538514A (en) | 2015-04-22 |
| CN104538514B CN104538514B (en) | 2017-07-11 |
Family
ID=52854012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410856042.5A Active CN104538514B (en) | 2014-12-31 | 2014-12-31 | Flip LED chips structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104538514B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107863423A (en) * | 2017-10-26 | 2018-03-30 | 江苏新广联半导体有限公司 | The patterned preparation method of LED flip chip sapphire exiting surface |
| CN109216399A (en) * | 2018-09-29 | 2019-01-15 | 华南理工大学 | Inverted structure micro-dimension photonic crystal LED array chip and preparation method thereof |
| CN109600910A (en) * | 2018-11-07 | 2019-04-09 | 惠州市华星光电技术有限公司 | A kind of reflective circuit board and preparation method thereof |
| WO2023206713A1 (en) * | 2022-04-29 | 2023-11-02 | 福建兆元光电有限公司 | Micro led light projection chip and method for manufacturing same |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101009344A (en) * | 2006-01-27 | 2007-08-01 | 杭州士兰明芯科技有限公司 | Coarse sapphire bushing LED and its making method |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN102769083A (en) * | 2012-07-16 | 2012-11-07 | 江苏扬景光电有限公司 | Flip-chip bonding nitride light emitting diode (LED), light-transmission substrate thereof, and methods for manufacturing light-transmission substrate |
| CN202721173U (en) * | 2012-07-16 | 2013-02-06 | 江苏扬景光电有限公司 | A nitride light emitting diode bonded by flip-chip technology and a light-transparent substrate thereof |
| US20130056770A1 (en) * | 2011-09-06 | 2013-03-07 | Maxim S. Shatalov | Patterned Substrate Design for Layer Growth |
| CN103137814A (en) * | 2011-12-01 | 2013-06-05 | 台湾积体电路制造股份有限公司 | Light emitting diode with improved light extraction efficiency and methods of manufacturing same |
| KR20130066440A (en) * | 2011-12-12 | 2013-06-20 | 엘지이노텍 주식회사 | Light emitting device and light emitting apparatus having the same |
| CN103367560A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | Light emitting diode preparation method |
| WO2014126016A1 (en) * | 2013-02-12 | 2014-08-21 | エルシード株式会社 | Led element and manufacturing method for same |
| CN204333022U (en) * | 2014-12-31 | 2015-05-13 | 杭州士兰微电子股份有限公司 | Flip LED chips structure |
-
2014
- 2014-12-31 CN CN201410856042.5A patent/CN104538514B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101009344A (en) * | 2006-01-27 | 2007-08-01 | 杭州士兰明芯科技有限公司 | Coarse sapphire bushing LED and its making method |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| US20130056770A1 (en) * | 2011-09-06 | 2013-03-07 | Maxim S. Shatalov | Patterned Substrate Design for Layer Growth |
| CN103137814A (en) * | 2011-12-01 | 2013-06-05 | 台湾积体电路制造股份有限公司 | Light emitting diode with improved light extraction efficiency and methods of manufacturing same |
| KR20130066440A (en) * | 2011-12-12 | 2013-06-20 | 엘지이노텍 주식회사 | Light emitting device and light emitting apparatus having the same |
| CN103367560A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | Light emitting diode preparation method |
| CN102769083A (en) * | 2012-07-16 | 2012-11-07 | 江苏扬景光电有限公司 | Flip-chip bonding nitride light emitting diode (LED), light-transmission substrate thereof, and methods for manufacturing light-transmission substrate |
| CN202721173U (en) * | 2012-07-16 | 2013-02-06 | 江苏扬景光电有限公司 | A nitride light emitting diode bonded by flip-chip technology and a light-transparent substrate thereof |
| WO2014126016A1 (en) * | 2013-02-12 | 2014-08-21 | エルシード株式会社 | Led element and manufacturing method for same |
| CN204333022U (en) * | 2014-12-31 | 2015-05-13 | 杭州士兰微电子股份有限公司 | Flip LED chips structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107863423A (en) * | 2017-10-26 | 2018-03-30 | 江苏新广联半导体有限公司 | The patterned preparation method of LED flip chip sapphire exiting surface |
| CN109216399A (en) * | 2018-09-29 | 2019-01-15 | 华南理工大学 | Inverted structure micro-dimension photonic crystal LED array chip and preparation method thereof |
| CN109600910A (en) * | 2018-11-07 | 2019-04-09 | 惠州市华星光电技术有限公司 | A kind of reflective circuit board and preparation method thereof |
| WO2023206713A1 (en) * | 2022-04-29 | 2023-11-02 | 福建兆元光电有限公司 | Micro led light projection chip and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104538514B (en) | 2017-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5511114B2 (en) | Micro light-emitting diode array with improved light extraction | |
| JP2009010435A (en) | Forming optical element of light emitting device for improved light extraction | |
| CN101515624B (en) | Method for manufacturing LED chips | |
| CN103915533A (en) | Graphical substrate and inverted LED chip and manufacturing method thereof | |
| US11785793B2 (en) | Flip-chip light emitting diode and manufacturing method thereof | |
| CN106025028B (en) | Upside-down mounting LED chip and preparation method thereof | |
| CN203800068U (en) | Patterned substrate and flip LED chip | |
| CN104538514A (en) | Reverse LED chip structure and manufacturing method thereof | |
| CN109904285B (en) | Light emitting diode chip and manufacturing method thereof | |
| CN104409585A (en) | Vertical LED structure and manufacturing method thereof | |
| CN204333022U (en) | Flip LED chips structure | |
| US8951820B2 (en) | Method of fabricating nano-imprint mold for a light emitting diode | |
| CN103094437A (en) | Manufacturing method of high-power light-emitting diode (LED) chips | |
| CN114551680A (en) | Flip light-emitting diode chip and preparation method thereof | |
| CN104124311B (en) | A kind of method making light emitting diode passivation protection layer | |
| CN102082216A (en) | Light emitting diode chip and manufacturing method thereof | |
| TWI583025B (en) | Thin-film flip-chip light emitting diode having dual sub-mounts and method for manufacturing the same | |
| KR20160092635A (en) | Nano imprint mold manufacturing method, light emitting diode manufacturing method and light emitting diode using the nano imprint mold manufactured by the method | |
| CN204332997U (en) | For the two-sided patterned substrate of flip LED chips | |
| CN204696144U (en) | A kind of substrate for flip LED chips | |
| CN104600169A (en) | Double side patterned substrate for flip LED (light emitting diode) chip and manufacture method thereof | |
| CN109461753B (en) | Large-injection flip micron LED chip and preparation method thereof | |
| CN103633198B (en) | LED chip manufacture method and LED chip | |
| TWI608633B (en) | Light emitting diode device and method for manufacturing the same | |
| CN204596826U (en) | LED structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |