CN107863423A - The patterned preparation method of LED flip chip sapphire exiting surface - Google Patents
The patterned preparation method of LED flip chip sapphire exiting surface Download PDFInfo
- Publication number
- CN107863423A CN107863423A CN201711017377.8A CN201711017377A CN107863423A CN 107863423 A CN107863423 A CN 107863423A CN 201711017377 A CN201711017377 A CN 201711017377A CN 107863423 A CN107863423 A CN 107863423A
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- sapphire substrate
- chip
- sapphire
- backside surface
- patterned
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 64
- 239000010980 sapphire Substances 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000003384 imaging method Methods 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 230000003044 adaptive effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of patterned preparation method of LED flip chip sapphire exiting surface, comprises the following steps：Step S1, LED chip preceding working procedure is completed with normal controlled collapsible chip connec-tion and made, until reducing thin of sapphire substrate glossing is completed, structure includes from top to bottom：Sapphire Substrate, GaN epitaxial layer after being thinned, the electrode of flip-chip；Step S2, photoresist is coated in Sapphire Substrate backside surface, is exposed by laser direct-writing and completes photoetching process；Step S3, default photoetching offset plate figure is formed in Sapphire Substrate backside surface after exposure imaging, then Sapphire Substrate backside surface is performed etching with ICP dry etch process；Step S4, after residual photoresist is removed, figure is formed in Sapphire Substrate backside surface.
Description
Technical field
The present invention relates to a kind of LED core blade technolgy, especially a kind of patterned work of LED flip chip sapphire exiting surface
Skill.
Background technology
In recent years, light emitting diode（LED）As most valued light source technology, wherein LED flip chip technology turns into
One of focus.Compared with positive cartridge chip, LED upside-down mounting products have low-voltage, high brightness, high reliability, high saturation current density
The features such as, there is splendid development prospect.
Typical LED flip chip schematic diagram is shown in Fig. 1.Usual chip structure includes Sapphire Substrate, gallium nitride respectively
（GaN）Layer and two chip electrodes.Flip-chip is in use, face down, by two chip electrodes and following encapsulation base
Plate couples, and light is emitted after GaN layer is sent from the back side of Sapphire Substrate.This flip chip structure is applicable to various GaN bases
LED chip, including green glow, blue light, purple light and ultraviolet chip.
Because the refractive index of Sapphire Substrate is more than surrounding environment, light produces when reaching sapphire exiting surface from inside to be all-trans
Penetrate, cause light to be not easily taken out.To reduce total reflection of the light in sapphire exiting surface, light extraction efficiency is improved, industry is all being studied
Sapphire exiting surface is patterned, and the figure cycle effect of smaller light extraction is better.Typically using ICP dry etchings to sapphire
Processing is patterned, needs to be initially formed periodic pattern structure by photoetching process before this.Formed in sapphire surface
Cycle graph, main flow has two ways at present, and one kind is stepper, and another kind is nanometer embossing.
Stepper is reduced the figure of reticle with certain proportion by way of projection when working, and in substrate
Exposed successively on photoresist, whole face photoetching is completed in the form of graphic joining.Stepper litho is to substrate thickness uniformity, warpage
It is required that high, once substrate thickness uniformity is inadequate, or substrate has warpage in itself, and its figure exposed can cause development unnet,
The problem of pattern lacks.The flip-chip sapphire face of this case, is the substrate after being thinned, and itself thickness can be brought due to being thinned
Spend inconsistent, therefore can inevitably be reduced using stepper yield.Further for wafers more than 2 inch, it is thinned
Warpage is obvious afterwards, and by taking 4 inch as an example, its warpage is more than 15 microns.Which prevent the smooth implementation of stepper litho.
Nanometer embossing is a kind of contact stamping technique, and compared to stepper, it is to substrate warpage and thickness
The requirement of uniformity is relatively low, but it is only applicable to the high substrate of the big intensity of thickness.For flip-chip sapphire light extraction in this case
Face, because sapphire is very thin, only 150 micron thickness, stamping technique is used under this thickness, easily causes sapphire fragmentation,
Nanometer embossing is also difficult to apply.Therefore, how on slim flip-chip sapphire nanometer to be realized by non-contact technology
Figure turns into a widely studied key subject, is that blue and green light, purple light and ultraviolet LED flip-chip realize high brightness
Common problem.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art, provided using laser direct-write photoetching technique a kind of
The patterned preparation method of LED flip chip sapphire exiting surface, avoid that slim Sapphire Substrate is caused to damage, while it is right
Sapphire Substrate is adaptive, high to substrate warpage and thickness offset tolerance, ensure that the yield of litho pattern with it is consistent
Property.The technical solution adopted by the present invention is：
A kind of patterned preparation method of LED flip chip sapphire exiting surface, comprises the following steps：
Step S1, LED chip preceding working procedure is completed with normal controlled collapsible chip connec-tion and made, until reducing thin of sapphire substrate buffer
Skill is completed, and structure includes from top to bottom：Sapphire Substrate, GaN epitaxial layer after being thinned, the electrode of flip-chip；
Step S2, photoresist is coated in Sapphire Substrate backside surface, is exposed by laser direct-writing and completes photoetching process；
Step S3, default photoetching offset plate figure is formed in Sapphire Substrate backside surface after exposure imaging, then with ICP dry etchings
Technique performs etching to Sapphire Substrate backside surface；
Step S4, after residual photoresist is removed, figure is formed in Sapphire Substrate backside surface.
Further, after step S4, in addition to：
Step S5, cutting separation is carried out to chip.
More preferably,
In step S4, it will serve as a contrast 1 backside surface in sapphire and form figure, in addition to smooth do not scheme after residual photoresist removes
Shape region, as post laser stealth Cutting Road；
Step S5, cutting separation is carried out to chip inside Sapphire Substrate stealth Cutting Road with stealth cutting Laser Focusing.
Further, in step S4, the figure of micron order or submicron order is formed on a sapphire substrate.
The advantage of the invention is that：The laser writing technology that the present invention uses, it is not necessary to and Sapphire Substrate contact, avoid
Slim substrate is caused to damage, while it is adaptive to substrate, it is high to substrate warpage and thickness offset tolerance, it ensure that
The yield and uniformity of litho pattern.In addition it is easy to operation without mask.To solve LED flip chip sapphire
Exiting surface graphically provides a kind of new technical scheme, provides improving light extraction efficiency based on sapphire GaN flip-chips
A kind of feasible scheme.
Brief description of the drawings
Fig. 1 is typical GaN base LED flip chip structural representation.
Fig. 2 is the LED flip chip schematic diagram of the completion preceding working procedure of the present invention.
Fig. 3 is that photoresist and laser direct-writing exposure photoetching technology schematic diagram are coated in the Sapphire Substrate of the present invention.
Fig. 4 is dry etching sapphire substrate surface schematic diagram after the completion of exposure of the invention.
The sapphire substrate surface that Fig. 5 is the present invention forms pictorial diagram.
Fig. 6 is the laser stealth cutting schematic diagram of the present invention.
Embodiment
With reference to specific drawings and examples, the invention will be further described.
Graphical for LED flip chip sapphire exiting surface, by research, laser direct-writing is another feasible photoetching
Method, its operation principle are to control high-precision laser beam scanning by computer, are directly exposed on a photoresist designed by writing out
Arbitrary graphic, so that design configuration is transferred directly on substrate.Laser direct-write photoetching, without mask plate, graphics resolution
Height, photoetching write efficiency is fast, repeats aligning accuracy height, has adaptivity to environment and substrate thickness change, easy to operate.
The specific step of such a process is as follows：
Step S1, made as shown in Fig. 2 completing LED chip preceding working procedure with normal controlled collapsible chip connec-tion, until Sapphire Substrate
Attenuated polishing technique is completed, and structure includes from top to bottom：Sapphire Substrate 1, GaN epitaxial layer 2 after being thinned, the electricity of flip-chip
Pole 3；
Step S2, as shown in figure 3, coating photoresist 4 in the backside surface of Sapphire Substrate 1, light is completed by laser direct-writing exposure 5
Carving technology；
Step S3, as shown in figure 4, default photoetching offset plate figure 6 is formed in the backside surface of Sapphire Substrate 1 after exposure imaging, then
The backside surface of Sapphire Substrate 1 is performed etching with ICP dry etch process 7；
Step S4, as shown in figure 5, micron order or submicron order will be formed in Sapphire Substrate 1 after residual photoresist removes
Figure 8, wherein smooth non-patterned area 9, is post laser stealth Cutting Road；
Step S5, as shown in fig. 6, being cut with stealth cutting Laser Focusing inside Sapphire Substrate stealth Cutting Road to chip
Separation is cut, due to the flat surface reserved in the region, scattering will not be caused to influence cutting to laser.In Fig. 6, light is cut by laser
Beam 10 focuses on inside laser stealth Cutting Road from the top down, rather than surface.
The stealthy cutting of laser is advantageous in that Laser Focusing under the non-surface of patterned area 9, will not be to indigo plant during cutting
Jewel substrate surface causes ablation, avoid sapphire substrate surface nigrescence, surface damage etc. it is bad caused by light absorbs show
As.
Claims (4)
1. a kind of patterned preparation method of LED flip chip sapphire exiting surface, it is characterised in that comprise the following steps：
Step S1, LED chip preceding working procedure is completed with normal controlled collapsible chip connec-tion and made, until reducing thin of sapphire substrate buffer
Skill is completed, and structure includes from top to bottom：Sapphire Substrate (1), GaN epitaxial layer (2) after being thinned, the electrode (3) of flip-chip；
Step S2, in Sapphire Substrate (1) backside surface coating photoresist (4), (5) are exposed by laser direct-writing and complete photoetching work
Skill；
Step S3, default photoetching offset plate figure (6) is formed in Sapphire Substrate (1) backside surface after exposure imaging, then done with ICP
Method etching technics (7) performs etching to Sapphire Substrate (1) backside surface；
Step S4, after residual photoresist is removed, figure (8) is formed in Sapphire Substrate (1) backside surface.
2. the patterned preparation method of LED flip chip sapphire exiting surface as claimed in claim 1, it is characterised in that
After step S4, in addition to：
Step S5, cutting separation is carried out to chip.
3. the patterned preparation method of LED flip chip sapphire exiting surface as claimed in claim 2, it is characterised in that
In step S4, after residual photoresist is removed, figure (8) is formed in Sapphire Substrate (1) backside surface, in addition to it is smooth
Non- patterned area (9), as post laser stealth Cutting Road；
Step S5, cutting separation is carried out to chip inside Sapphire Substrate stealth Cutting Road with stealth cutting Laser Focusing.
4. the patterned preparation method of LED flip chip sapphire exiting surface as described in claim 1,2 or 3, its feature exist
In,
In step S4, the figure (8) of micron order or submicron order is formed in Sapphire Substrate (1).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711017377.8A CN107863423A (en) | 2017-10-26 | 2017-10-26 | The patterned preparation method of LED flip chip sapphire exiting surface |
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| CN201711017377.8A CN107863423A (en) | 2017-10-26 | 2017-10-26 | The patterned preparation method of LED flip chip sapphire exiting surface |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192846A (en) * | 2018-08-31 | 2019-01-11 | 宁波天炬光电科技有限公司 | Accessory grade low cost surface treatment method and a kind of device |
| CN109244198A (en) * | 2018-08-31 | 2019-01-18 | 宁波天炬光电科技有限公司 | Chip-scale low cost surface treatment method and a kind of device |
| CN110364604A (en) * | 2019-07-15 | 2019-10-22 | 厦门三安光电有限公司 | Ultra-violet light-emitting element, ultra-violet light-emitting component package and preparation method thereof |
| CN110723909A (en) * | 2019-10-29 | 2020-01-24 | 维达力实业(深圳)有限公司 | Method for processing decorative pattern and microscopic texture on surface of base material |
| CN112166507A (en) * | 2020-01-06 | 2021-01-01 | 厦门三安光电有限公司 | Light emitting diode and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109244198A (en) * | 2018-08-31 | 2019-01-18 | 宁波天炬光电科技有限公司 | Chip-scale low cost surface treatment method and a kind of device |
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| CN112166507A (en) * | 2020-01-06 | 2021-01-01 | 厦门三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN112166507B (en) * | 2020-01-06 | 2022-07-22 | 厦门三安光电有限公司 | Manufacturing method of light emitting diode |
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Application publication date: 20180330 |