CN110364604A - Ultra-violet light-emitting element, ultra-violet light-emitting component package and preparation method thereof - Google Patents
Ultra-violet light-emitting element, ultra-violet light-emitting component package and preparation method thereof Download PDFInfo
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- CN110364604A CN110364604A CN201910636591.4A CN201910636591A CN110364604A CN 110364604 A CN110364604 A CN 110364604A CN 201910636591 A CN201910636591 A CN 201910636591A CN 110364604 A CN110364604 A CN 110364604A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Abstract
A kind of ultraviolet semiconductor light-emitting component comprising: light-transmissive substrates, semiconductor layer and electrical opposite electrode；Semiconductor layer and electrically opposite electrode are located at light-transmissive substrates first surface side；It is characterized by: it is light-emitting surface side that the light-transmissive substrates, which have with the lateral anti-second surface side of first surface, second surface side is divided into the first area of inside and the second area of outside, wherein the first area is graphical or roughening is rough and uneven in surface, the second area is relatively flat region relative to first area, wherein the substrate thickness of the first area is equal to or higher than the substrate thickness of second area lower than the thickness of bottom to the substrate first surface side of the substrate thickness of second area or the rough and uneven in surface pattern of the first area.The rough and uneven in surface pattern of first area is effectively improved the adhesiveness of potting resin, and second area effectively prevent resin to rupture, while having snap effect to potting resin, and improve light-out effect.
Description
Technical field
The present invention relates to a kind of packaging body, which is particularly suitable for the encapsulation of ultraviolet LED chip.
Background technique
UV LED chip (λ≤340nm) can be used for sky as a kind of light source with the advantages such as efficient, energy saving, light
Gas and water purification, the fields such as Medical sterilization, disinfection ultra-violet curing.Since ultraviolet band light source has significantly many organic materials
Cracking and yellow problem.Particularly, the silicon that the photon of the ultraviolet band can make LED package device generally use
There is glue and splits phenomenon in glue material.In order to avoid caused by the protecting colloid cracking of packaging body device stability decline the problem of,
People replace packaging plastic using inorganic material such as glass, but the combination of substrate and glass material is relatively difficult to achieve, and translucency is good
Inorganic material higher cost, these factors limit the extensive use of inorganic encapsulated.Currently, there is a kind of fluororesin inorganic encapsulated
Material, refractive index are generally 1.35, and ultraviolet light transmission is high, good reliability, very promising deep ultraviolet LED package material
Material.But it is more difficult to process, it is easy to appear cutting and falls off, the problems such as vibration falls off, Reflow Soldering bubble.
Summary of the invention
The purpose of the present invention is to provide a kind of ultraviolet semiconductor light-emitting components comprising: light-transmissive substrates, semiconductor layer and
Electrical opposite electrode；Semiconductor layer and electrically opposite electrode are located at light-transmissive substrates first surface side；The light transmission lining
It is light-emitting surface side that bottom, which has with the lateral anti-second surface side of first surface, and second surface side is divided into the first area of inside and outer
Around second area, wherein the first area is graphical or roughening is rough and uneven in surface, described second area relative to the
One region is relatively flat region, wherein the light-transmissive substrates thickness of the first area is thick lower than the light-transmissive substrates of second area
The substrate that the base substrate thickness of degree or the scraggly pattern of the first area is equal to or higher than second area is thick
Degree.
Preferably, the substrate thickness that wherein substrate thickness of first area is lower than second area is at least 0.1 μm.
Or it is preferred, wherein the base substrate thickness of first area is higher than at least 0.1 μm of substrate thickness of second area,
At most 2 μm.
Preferably, it is 0.1 ~ 2 μm that the first area, which is patterned or is roughened as scraggly depth,.
Preferably, the emission wavelength of the semiconductor light-emitting elements is not more than 340nm.
Preferably, the rough and uneven in surface continuous protrusion for around multiple recess portions and multiple recess portions of the first area
Or the rough and uneven in surface continuous recess portion for around multiple protrusions and multiple protrusions of the first area.
Preferably, the second area is flat or rough and uneven in surface, and scraggly depth is at most 5nm.
Preferably, the second area is 5 ~ 25 from the edge of first area to the width between the sidewall edge of light-transmissive substrates
μm。
Preferably, the substrate is sapphire, and thickness is at least 250 μm.
Meanwhile the present invention provides a kind of following packaging body, including bracket, one surface side of bracket is equipped with of the present invention half
Conductor light-emitting component, wherein first area and second area are all directly contacted with transparent enclosure resin.
Preferably, the transparent enclosure resin is solid resin, and the transparent enclosure resin is preferably glimmering without other
The material granule of luminescent material particle or light absorbent particle or diffraction light.
Preferably, the potting resin outer surface is without optical lens.
Preferably, the substrate is planar substrates.
Preferably, the horizontal breadth of the outer surface side of the edge side and potting resin of the light-emitting surface of the substrate is 10 μm
~500μm。
Preferably, the potting resin is silicone resin or fluororesin.
Preferably, the bracket is ceramics bracket, bracket have at least two conductive patterns respectively with two electrical phases
Counterelectrode connection.
Preferably, the outer surface side of the potting resin is light emission side.
Preferably, the potting resin with a thickness of 10 ~ 100 μm.
Present invention simultaneously provides a kind of following preparation methods of ultraviolet semiconductor light-emitting component comprising following steps:
1) light-transmissive substrates are selected, light-transmissive substrates include opposite first surface side and second surface side, and the first of light-transmissive substrates
Surface side obtains semiconductor light emitting sequence；
2) the second surface side for defining light-transmissive substrates includes first area and second area, and wherein first area, which is formed, graphically covers
Film, second area form planless exposure mask；
3) the first step etching is carried out to the first area of pattern mask, etches scraggly pattern to obtain, removal first
The exposure mask in region and second area；
4) second area is blocked by exposure mask, carries out the second step etching to the scraggly topographical surface in first area；
5) in second area to light transmissive substrate and semiconductor light emitting sequence units, to obtain semiconductor light-emitting elements.
Present invention simultaneously provides a kind of preparation methods of ultraviolet semiconductor light-emitting component comprising following steps:
1) light-transmissive substrates are selected, light-transmissive substrates include opposite first surface side and second surface side, and the first of light-transmissive substrates
Surface side obtains semiconductor light emitting sequence；
2) the second surface side for defining light-transmissive substrates includes first area and second area, forms pattern mask in the firstth area
Domain, second area is without exposure mask；
3) the first step etching is carried out to the first area of pattern mask and second area, it is convex with the surface for obtaining first area
The pattern of recessed injustice, second area are etched to form groove simultaneously, remove the exposure mask of first area and second area；
4) the scraggly topographical surface in first area forms planless exposure mask, and exposure second area carries out second area
Second step etching removes the exposure mask of first area after the completion of etching；
5) in second area to light transmissive substrate and semiconductor light emitting sequence units, to obtain semiconductor light-emitting elements.
Preferably, the width of the second area is between 5 ~ 25 μm.
Present invention simultaneously provides a kind of following preparation methods of the packaging body of ultraviolet semiconductor light-emitting component comprising uses
Method of the invention obtains ultraviolet semiconductor light-emitting component, obtains packaging body by pad pasting or mode for dispensing glue.
Design through the invention, the present invention are at least up to following effect:
1) the light-emitting surface first area of light-transmissive substrates is scraggly region, can increase transparent enclosure resin and semiconductor is sent out
Tackness or adhesion between optical diode, improve the lasting reliability of transparent enclosure resin, and increase light extraction efficiency；
2) further, the substrate thickness of first area is lower than the substrate thickness of second area, can increase adhered area, is formed
To the snap effect of transparent enclosure resin, increase attached type.Or the substrate thickness of second area is lower than the substrate of first area
Height can also increase adhered area, form the snap effect in outside；
3) the light-emitting surface second area of light-transmissive substrates is planarization regions, can prevent transparent enclosure resin in the case where relatively thin
The case where being easily broken.
Detailed description of the invention
Attached drawing is used to provide further understanding of the present invention, and constitutes part of specification, with reality of the invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.In addition, attached drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 ~ 2 are the package body structure schematic diagram of embodiment one；
Fig. 3 ~ 4 are the structural schematic diagram of the intracorporal ultraviolet semiconductor light-emitting component of encapsulation of embodiment one；
Fig. 5 is the structural schematic diagram that the translucent substrate surface of the ultraviolet semiconductor light-emitting component of Fig. 3 ~ 4 is overlooked；
Fig. 6 ~ 9 be embodiment one described in technique step 2) -6) obtain structural schematic diagram；
Figure 10-11 is the ultraviolet semiconductor light emitting element structure schematic diagram of embodiment two；
Figure 12 ~ 13 are the package body structure schematic diagram of embodiment two；
Figure 14 ~ 17 be embodiment two described in technique step 2) -6) obtain structural schematic diagram.
Specific embodiment
Light emitting diode construction of the invention is described in detail with reference to the accompanying drawing, how the present invention is answered whereby
Technical problem is solved with technological means, and the realization process for reaching technical effect can be fully understood and implemented.It needs
Bright, as long as not constituting conflict, each feature in each embodiment and each embodiment in the present invention can be tied mutually
It closes, it is within the scope of the present invention to be formed by technical solution.
Embodiment one
The present invention provides a kind of packaging body of ultraviolet semiconductor light-emitting component, belongs to LED field of luminescent technology.As shown in Figure 1, envelope
Filling body includes substrate 101, and flip chip type ultraviolet semiconductor light-emitting component is equipped on substrate 101.
Substrate 101 is formed by any material in the present embodiment.For example, can be mentioned that metal, and ceramics, resin, dielectric, paper
Slurry, glass, paper, the composite material and conductive material (for example, metal, carbon etc.) of composite material or these materials.Metal includes
Contain copper, iron, nickel, chromium, aluminium, silver, gold, the metal of titanium or its alloy.The example of resin includes epoxy resin, bismaleimide
Triazine (BT) resin, polyimide resin etc..Resin can contain white pigment such as titanium oxide.Wherein, preferably ceramic.
The example of ceramics includes containing aluminium oxide, aluminium nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride or theirs is mixed
Those of object is closed, and it is preferable to use the aluminium nitride etc. with high-cooling property.Substrate may insure intensity appropriate or can be with
With so-called flexibility.
Preferred substrate is plane substrate, and the substrate surface of plane can also form local groove or through-hole to install
Chip or production conductive pattern.Surface side on substrate for installing semiconductor light-emitting elements at least have there are two conductive pattern
102 and 103, two conductive patterns are electrically on the contrary, pass through adhesive such as with the electrical opposite electrode of semiconductor light-emitting elements respectively
Crystal-bonding adhesive is electrically connected.The thickness of substrate 101 is usually 0.25 ~ 0.50mm, the other side plating metal on surface layer of substrate, for sealing
Dress body is mounted on application products, can there is the through-hole structure (not shown) of perforation upper and lower surface.
As shown in Fig. 2, ultraviolet semiconductor light-emitting component of the invention specifically includes light-transmissive substrates 104, the light-transmissive substrates
104 first surface sides have semiconductor layer and electrically opposite electrode.
The light-transmissive substrates 104, thickness is more than or equal to 250 μm, preferably between 250 ~ 400 μm, this thickness it is saturating
Light substrate 104 is conducive to improve light extraction efficiency similar to an optical lens.
Light-transmissive substrates 104 are preferably single crystalline substrate 104, such as sapphire, gallium nitride substrate.The present embodiment is sapphire lining
Bottom.
Semiconductor layer includes at least the first conductive type semiconductor layer 105, second conductive type semiconductor layer 107 and shines
Layer 106, wherein the material of semiconductor layer is AlxGa1-xN (x is between 0 ~ 1), the first conduction type and the second conduction type difference
It is adulterated for n-type doping or p-type.Semiconductor layer can also include the buffer layers such as other layer such as aluminium nitride.
Ultraviolet emission wavelength range≤340nm, more preferably deep-UV light-emitting wave-length coverage are less than or equal to 280nm.
It is furthermore preferred that the semiconductor layer of Sapphire Substrate first surface side is obtained by MOCVD, the of light-transmissive substrates 104
One surface side is flat to help to obtain the high semiconductor layer of epitaxial quality, and therefore, sapphire first surface side is preferably flat
Face does not preferably have the figure or irregular figure of rule.
Flip chip type ultraviolet semiconductor light-emitting component further includes two electrical opposite electrodes 108 and 109, and two electrical property are electric on the contrary
Pole 109 and 108 is connect with the first conductive type semiconductor layer 105, second conductive type semiconductor layer 107 respectively.Two opposite
The material of electrode is the combination of metal or metal alloy or metal and transparency conducting layer, and preferably two opposite electrodes have metal anti-
Penetrate layer.Wherein the light-emitting surface side of the non-transparent substrate of ultraviolet semiconductor light-emitting component can also have other protective film layers, such as thoroughly
Bright insulating layer, silicon oxide or silicon nitride.
Wherein the second surface side of light-transmissive substrates 104 has first area 1041 and second area 1042, second surface side
Major part occurs when reaching the second surface side of light-transmissive substrates 104 for the luminous radiation of light-emitting surface side, i.e. permission luminescent layer 106
Transmission, small part can reflex in semiconductor layer.Transparent enclosure resin 110 is covered on semiconductor light emitting as a protective layer
The outer surface side of element, the side of first area 1041 and second area 1042, light-transmissive substrates 104 including second surface side
The side wall and section bottom of wall and semiconductor sequence are all directly contacted with transparent enclosure resin 110, and transparent enclosure tree
The surface that rouge 110 is covered on supporting substrate 101 forms direct contact.The first area 1041 of second surface side and second area
The light of major mass part is reflected without other reflecting layer between 1042 and transparent enclosure resin or is blocked mainly without other light blocking layers
Partial light.
Transparent enclosure resin 110 forms integral type clad structure to semiconductor light-emitting elements, and good airproof performance helps to increase
The reliability of strong device.
Transparent enclosure resin 110 is the solid material being formed by curing, wherein it is preferred that silicone resin or fluororesin, for deep ultraviolet
Wave band, more preferably fluororesin, the heat resistance and UV resistance of fluorine resin be excellent；It is furthermore preferred that described contains
Fluororesin is armorphous fluorine resin, to improve to ultraviolet translucency.
Preferably, the fluorine resin is armorphous fluorine resin, and crystallinity is less than or equal to 10%.
Preferably, the fluorine resin is the copolymer of perfluor base oxygen heterocycle and perfluor base alkene.
Preferably, the structural unit of the fluorine resin is to contain five-membered ring, and contain 1 or 2 oxygen in ring；It is described
Fluorine resin be as following formula structure:, wherein the ratio of n/ (n+m) % between
Between 40-60%.
Preferably, the potting resin 110 be formed in the surface of light-transmissive substrates 104 with a thickness of at least 10 μm, at most
100 μm, preferably 10 ~ 50 μm, the potting resin of thinner thickness is easier to be ruptured in scraggly edge side.
Preferably, the outer surface of the potting resin provides light-emitting surface, and outer surface is without installing optical lens, such as glass
Lens.
Preferably, the potting resin 110 is that pad pasting or mode for dispensing glue are formed.
The potting resin 110 preferably applies in the wave-length coverage lower than 340nm, and nothing contains other fluorescent materials
The material granule of particle or light absorbent particle or diffraction light.
Due to silicone resin or fluororesin, to sapphire substrate surface poor adhesion, in order to improve solid encapsulation tree
Reliability of the rouge in packaging body avoids falling off, and the present invention changes for the surface topography of the light-emitting surface of light-transmissive substrates 104
It is kind.The first area 1041 that wherein the second surface side of light-transmissive substrates 104 has is located inside, and first area 1041 has convex-concave
Uneven pattern.The scraggly pattern is the regular convex-concave pattern graphically formed or the irregular convex concave that roughening is formed
Looks.
It is specific as shown in figure 3, the pattern of first area 1041 surface relief injustice specifically can be multiple protrusions and
Continuous recess portion combines to be formed around multiple protrusions.Or as shown in figure 4, the pattern of first area 1041 surface relief injustice can be with
It is that continuous protrusion combines to be formed around multiple recess portions and multiple recess portions.
As shown in figure 3, height H1, that is, rough and uneven in surface pattern depth of preferred each protrusion, at least more than 0.1 μm, more
Preferably 0.1 ~ 1 μm of height of nano-scale of protrusion or the miniature sizes between 1 ~ 2 μm, height herein are average value.
The height of protrusion, which is more than 2 μm, will lead to light-out effect reduction.The width of the bottom cross section of each protrusion is 0.1 ~ 5 μm, more
Preferably, size of the width of the bottom cross section of protrusion between 0.1 ~ 1 μm of nano-scale or 1 ~ 2 μm, width herein
Degree is average value.Multiple protrusions are higher relative to the specific surface area of continuous concave bottom, can more improve potting resin and light transmission
Adhesiveness between substrate light-emitting surface, while improving light extraction efficiency.
Each protrusion can be sharp cone distal or dome-type or arc or taper platform.
Or as shown in figure 4, the continuous protrusion around multiple recess portions height H1, that is, scraggly depth, at least greatly
In 0.1 μm, 0.1 ~ 1 μm of height of nano-scale of preferred protrusion or the miniature sizes between 1 ~ 2 μm, are convex herein
The average height value in portion.The shape of each recess portion can be hemispherical or arc or sharp cone distal or taper platform.
Wherein the second surface side of light-transmissive substrates 104 includes the peripheral side that second area 1042 is located at first area 1041,
That is the edge side that is located at second surface side of second area 1042.It is phase that wherein second area 1042, which are opposing first regions 1041,
To flat site.The relatively flat pattern on 1042 surface of second area can be absolute flat or be also possible to convex-concave not
It is flat, specifically, height of the scraggly topographical height of second area lower than the scraggly pattern of first area, second
The scraggly topographical height in region can be lower than 5nm or lower than 4nm or lower than 3nm or lower than 2nm or lower than 1nm etc..When
Potting resin such as encapsulating film be covered on the edge of the second area 1042 of light-transmissive substrates 104 and cover to substrate side wall when, thoroughly
Bright potting resin Curvature varying is big, and silicone resin film especially fluororesin film is easy to be punctured.By setting second area in light transmission
The periphery of the second surface side of substrate 104 is the region of relatively flat, and potting resin can be effectively prevent by scraggly structure
It punctures.Second area relatively flat, it is hidden cut chip when, can effectively avoid laser inject substrate in occur diffraction phenomena, avoid
Light loss.Wherein at most 100 μm of transparent enclosure resin, preferably 10 ~ 50 μm, the potting resin of thinner thickness it is easier
Scraggly edge side ruptures.
As shown in figure 5, the width value D1 of edge side of the preferred second area from the edge of first area to light-transmissive substrates
It is 5 ~ 25 μm.Width is narrow, then prevents puncturing ineffective, the wide potting resin that will lead to of width is in light-transmissive substrates second surface
The adhesiveness of side reduces and light extraction efficiency reduces.
It is furthermore preferred that thickness H2 of the light-transmissive substrates 104 from first surface side to the first area of second surface side is low
In the thickness H3 of the second area from first surface side to second surface side.It is lower than the design of H3 by H2, forms second area
Substrate thickness relative to the higher step of first area substrate thickness, first area is opposite groove, as shown in Figure 1, if
Transparent enclosure resin is formed by the technique of press mold, then transparent enclosure resin layer is accordingly in the second surface of light-transmissive substrates 104
The first area 1041 of side is filled to lower recess, and transparent enclosure resin forms snap effect in the opposite groove in first area,
Increase the adhesiveness and reliability of transparent enclosure resin, and second surface side of the transparent enclosure resin far from substrate simultaneously
One side have much the same scraggly pattern, be also beneficial to out light；Or as shown in Fig. 2, if transparent enclosure resin
It is formed by technique for dispensing glue, is also beneficial to improve the adhered area that fluororesin is filled in the first area, increasing stabilization can
By property.Preferably, the H2 is lower than perhaps at least 0.2 μm or at least 1 μm of at least 0.1 μm of H3, at most 2 μm.More than the thickness
It is poor to spend, and is formed during the thickness difference, the scraggly pattern that will lead to first area tends to planarize.
It is furthermore preferred that the side wall of light-transmissive substrates 104 and/or the side wall of semiconductor layer can be roughened to improve out light
Efficiency.
Structure of the invention is obtained the invention mainly comprises following manufacturing process steps:
1) light-transmissive substrates are selected, light-transmissive substrates include opposite first surface side and second surface side, and the first of light-transmissive substrates
Surface side obtains semiconductor light emitting sequence；
A Sapphire Substrate is provided as light-transmissive substrates, obtains that AlGaN base is ultraviolet partly to lead in the first surface side of Sapphire Substrate
The semiconductor layer of body light-emitting component completes the production of electrode and insulating layer on the semiconductor layer；Complete the of Sapphire Substrate
The light-emitting surface of two surface sides polishes reduction process, and retains the thickness (thickness >=250 μm) of certain Sapphire Substrate, after polishing
The roughness (scraggly topographical height) of the second surface side of the Sapphire Substrate of formation is lower than 50nm.
2) the second surface side for defining light-transmissive substrates includes first area and second area, and wherein first area forms figure
Shape exposure mask, second area form planless exposure mask.
Specifically as shown in fig. 6, passing through alignment process or nanometer pressure in Sapphire Substrate light-emitting surface (second surface side)
The photoetching processes such as print make mask lithography glue pattern 201.Mask lithography glue pattern 201 includes graphical layout area 2011, figure
Shape layout area 2011 corresponds to the first area of Sapphire Substrate second surface side, and graphical layout area is continuous figure
Shape or multiple independent figures, while reserving the not patterned of one fixed width around the first area of second surface side and covering
Diaphragm area 2012, width are 10 ~ 50 μm, and not patterned masked areas 2012 is used to form the secondth area of sapphire substrate surface
Domain.
3) the first step etching is carried out to the first area of pattern mask, etches scraggly pattern to obtain, then
Remove the exposure mask of first area and second area.
First step etching is carried out to the region of the exposure of photoetching offset plate figure 201, the first step etching can be wet etching or dry
Method etching forms one by the graph copying of graphical layout area 2011 in the first area on Sapphire Substrate light-emitting surface surface
The Sapphire Substrate of the multiple recess portions or multiple protruding figures of depthkeeping degree, not patterned 2012 lower section of masked areas is not eclipsed
It carves, the height of the figure of multiple recess portions or protrusion is at least 0.2 μm or 1 μm or more or 2 μm or more or at most 5 μm.Due to first
Region will do it further etching, therefore the height of the scraggly pattern of acquisition by etching for the first time should be higher than most
The scraggly topographical height of whole first area.The top surface of the figure of the protrusion or recess portion of this step still residual part is divided
Photoresist.Residual photoetching offset plate figure 201 is removed after the completion of etching.
As shown in fig. 7, be first area 1041 in the region that sapphire substrate surface obtains periodic pattern, while
There is reserved flat site (width is 10 ~ 50 μm) around the first area and is used to form second area 1042.
4) planless exposure mask is formed in second area even curface, exposure first area carries out the to first area
Two step etchings remove the exposure mask of second area after the completion of etching.
As shown in figure 8, covering photoresist 202 on the surface of second area 1042, second step is carried out to first area 1041
Etching, etching can use dry etching or wet etching, and the depth of etching is at least 0.1 μm.Photoetching is removed after the completion of etching
Glue 202 obtains structure as shown in Figure 9, and wherein the light emission side surface of Sapphire Substrate includes first area 1041 and second
Region 1042.Second step etching is that the scraggly surface topography of the first area formed to the first step etching carries out second step
Etching, the second step etching will lead to first area substrate thickness down, be surrounded by the second region around formation first area recessed
The depth of slot structure, first area should be 0.1 μm at least below second area, while the scraggly pattern of first area can quilt
Opposite planarization, final first area it is rough and uneven in surface, the height of scraggly bottom to top is between 0.1 ~ 2 μm.
5) in second area to light transmissive substrate and semiconductor light emitting sequence units, to obtain semiconductor light emitting element
Part.
The wafer prepared is divided into LED core particle；Since chip reservation sapphire is thicker, generally use multiple tool hidden
Incision technology (>=2 knife), the middle position of second area 1042 can be used as laser stealth Cutting Road.
The present invention can also include encapsulation step: by the LED core particle die bond after cutting on ceramic substrate, and using fluorine-containing
Packaging plastic encapsulating film pad pasting or dispensing it is packaged, to obtain the structure of Fig. 1 or Fig. 2.
By the design to ultraviolet semiconductor light-emitting component, the roughened structure of the light-emitting surface of the light-transmissive substrates can be mentioned
Rise the conjugation of packing colloid and core particles.The core particles edge higher flat site of relative altitude can be used as card slot use to solidification
The increase adhesion of resin, while in the case where guaranteeing 10 ~ 100 μm of solidified resin thinner thickness, the flat site at the edge can
To prevent from puncturing cured packing colloid.
Compared with conventional UV LED encapsulating structure, UV LED wrapper made from the present embodiment
Part size is smaller, above can be more flexible applying.Preferably, the side length of packaging size is less than 3.5mm, and thickness is less than
1mm。
Embodiment two
As a kind of alternative of embodiment one, the present embodiment provides ultraviolet semiconductor light emitting element structures as shown in Figure 10
Schematic diagram, the second surface side of light-transmissive substrates 104 include first area 1041, the pattern height of first area surface relief injustice
For H4, the range of H4 is 0.1 ~ 2 μm, the scraggly patterned surface of first area to the first surface side of substrate with a thickness of
H5, H5 with a thickness of 250 μm or more, second surface side includes second area 1042, and the surface of second area 1042 is relative to
The surface in one region 1041 is relatively flat, and relatively flat can be absolutely flat or scraggly topographical height and be lower than
5nm.The surface of second surface side second area 1042 to first surface side with a thickness of H6, the thickness H6 of second area 1042 is low
H5 in first area 1041, and wherein the difference of H 5 and H4 is greater than H6.
The packaging body that the ultraviolet semiconductor light emitting element structure of the present embodiment is formed as illustrated by figs. 12-13, transparent enclosure tree
Rouge by overlay film or it is for dispensing glue in the form of be formed in semiconductor light-emitting elements side wall and light-transmissive substrates 104 the firstth area of light output surface
The surface side of domain 1041 and second area 1042.The second area 1042 is designed as relative to first area being relatively flat area
Domain can equally be punctured to avoid cured packing colloid in the surface side of second area；And since the second area is located at
The periphery of first area forms the lower step structure of graph substrate thickness relative to first area, and the step structure is to envelope
It fills resin and forms snap effect, prevent falling off for fluoride resin.Further, the thickness of second area is convex lower than first area
The concave bottom of recessed injustice pattern further increases snap effect to the substrate thickness of first surface side.Preferably, H5 and H4
Difference is greater than at least 0.1 μm of H6, perhaps the scraggly bottom of at least 0.5 μm at most 2 μm or the first area
The substrate thickness difference of substrate thickness and second area is at least 0.1 times of the height H4 of the rough and uneven in surface pattern of first area,
Or at least 0.5 times, it is less than or equal to 1 times.
Wherein the rough and uneven in surface pattern on the surface of first area 1041 is multiple raised and the continuous recess portion combination of surrounding and
At.
Or as shown in figure 11, the scraggly pattern on the surface of first area 1041 is that multiple recess portions and surrounding connect
Continuous combination of protrusions forms.
In order to obtain structure shown in Figure 10 or Figure 11, can according to embodiment one roughly the same processing step into
Row:
1) light-transmissive substrates are selected, light-transmissive substrates include opposite first surface side and second surface side, and the first of light-transmissive substrates
Surface side obtains semiconductor light emitting sequence.
A Sapphire Substrate is provided as light-transmissive substrates, it is ultraviolet to obtain AlGaN base in the first surface side of Sapphire Substrate
The semiconductor layer of semiconductor light-emitting elements completes the production of electrode and insulating layer on the semiconductor layer；Complete Sapphire Substrate
The light-emitting surface of second surface side polish reduction process, and retain the thickness (thickness >=250 μm) of certain Sapphire Substrate, throw
The roughness (scraggly topographical height) of the second surface side of the Sapphire Substrate formed after light is lower than 50nm.
2) the second surface side for defining light-transmissive substrates includes first area and second area, and wherein first area forms figure
Change exposure mask, second area is without exposure mask.
As shown in figure 14, it is covered in Sapphire Substrate light-emitting surface by the production of the photoetching processes such as alignment process or nano impression
Film photoetching offset plate figure 201.Mask lithography glue pattern 201 includes patterned area, and patterned area is first area, while at this
The light-emitting surface of the Sapphire Substrate of exposure one fixed width is as second area around first area.The width of the second area is
10~50μm.In order to obtain the side of light-transmissive substrates second surface shown in Figure 10 first area multiple protrusions, form the figure of photoresist
Shape region be multiple independent figures, in order to obtain the side of light-transmissive substrates second surface shown in Figure 11 first area it is multiple recessed
Portion, the patterned area of the photoresist of formation specifically expose the figure of the multiple regions of substrate second surface side first area.
3) the first step etching is carried out to the first area of pattern mask and second area, to obtain the table of first area
The scraggly pattern in face, second area are etched to form groove simultaneously, remove the exposure mask of first area and second area.
The etching of the first step is carried out to the region of the exposure of photoetching offset plate figure 201, particularly dry etching, will graphically arrange
Sapphire Substrate of the cloth region duplication below the first area on Sapphire Substrate light-emitting surface surface, not patterned exposed region
It is etched simultaneously.Remaining photoresist is removed, structure as shown in figure 15 is obtained.
4) planless exposure mask, exposure second area, to the secondth area are formed to the scraggly topographical surface in first area
Domain carries out the second step etching, and the exposure mask of first area is removed after the completion of etching.
As shown in figure 16, photoresist protective film 202 is formed in the figure upper surface of first area, the of exposure relatively flat
Two regions.Second area is further etched, the depth of etching is 0.1 ~ 2 μm or the depth of etching is first area
0.1 times of the depth of scraggly pattern ~ 1 times, preferred 0.5 ~ 1 times.Since the second area before etching is flat site,
Therefore the region is still flat site after further etching, it is preferred that and the first step and the second step etching are dry etchings,
Second area still can maintain the scraggly pattern on surface lower than 5nm by dry etching twice, and flatness is easy to control
And realization, it is 0.1 times ~ 1 times that second area, which preferably passes through second of etch depth, it is preferred that it is preferably 0.5 ~ 1 times,
It is capable of forming preferable snap effect, the second etch depth is deeper to will lead to etching work procedure complexity, and process costs are high.Remove photoetching
The structure that glue obtains is as shown in figure 17.
5) in second area to light transmissive substrate and semiconductor light emitting sequence units, to obtain semiconductor light emitting element
Part.
Wherein, it carries out that subsequent laser is hidden to be cut in the middle position of second area, and LED core is obtained by cutting technique
Grain.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (22)
1. a kind of ultraviolet semiconductor light-emitting component comprising: light-transmissive substrates, semiconductor layer and electrical opposite electrode；Semiconductor layer
And electrically opposite electrode is located at light-transmissive substrates first surface side；It is characterized by: the light-transmissive substrates have and the
The anti-second surface side of one surface lateral be light-emitting surface side, second surface side be divided into inside first area and outside second
Region, wherein the first area is graphical or roughening be rough and uneven in surface, described second area relative to first area is phase
To flat site, wherein the substrate thickness of the first area is lower than the substrate thickness of second area.
2. a kind of ultraviolet semiconductor light-emitting component according to claim 1 comprising: the wherein substrate thickness of first area
Substrate thickness lower than second area is at least 0.1 μm.
3. a kind of ultraviolet semiconductor light-emitting component comprising: light-transmissive substrates, semiconductor layer and electrical opposite electrode；The light transmission
Substrate first surface side has semiconductor layer and electrically opposite electrode；It is characterized by: the light-transmissive substrates and the first table
Surface side produces the structure of inside first area and outside second area to anti-second surface side, wherein the first area
It relative to first area is flat site that graphical or roughening, which is rough and uneven in surface, described second area, wherein described first
The thickness of the bottom of the rough and uneven in surface pattern in region to substrate first surface side is equal to or higher than the substrate thickness of second area.
4. a kind of ultraviolet semiconductor light-emitting component according to claim 3 comprising: wherein first area is rough and uneven in surface
The thickness of the bottom of pattern to substrate first surface side is higher than at least 0.1 μm of substrate thickness of second area, at most 2 μm or institute
State the height that the thickness difference between the bottom and second area surface of the rough and uneven in surface pattern of first area is rough and uneven in surface pattern
At least 0.1 times, at most 1 times of degree.
5. a kind of ultraviolet semiconductor light-emitting component according to claim 1 or 3, it is characterised in that: the first area quilt
It is 0.1 ~ 2 μm that graphical or roughening, which is scraggly depth,.
6. a kind of ultraviolet semiconductor light-emitting component according to claim 1 or 3, it is characterised in that: the semiconductor hair
The emission wavelength of optical element is not more than 340nm.
7. a kind of ultraviolet semiconductor light-emitting component according to claim 1 or 3, it is characterised in that: the first area
The rough and uneven in surface continuous protrusion for around multiple recess portions and multiple recess portions or the first area it is rough and uneven in surface
For the continuous recess portion around multiple protrusions and multiple protrusions.
8. a kind of ultraviolet semiconductor light-emitting component according to claim 1 or 3, it is characterised in that: the second area
To be flat or rough and uneven in surface, scraggly height is at most 5nm.
9. a kind of ultraviolet semiconductor light-emitting component according to claim 1 or 3, it is characterised in that: the second area
It is 5 ~ 25 μm from the edge of first area to the width between the sidewall edge of light-transmissive substrates.
10. a kind of packaging body according to claim 1 or 3, it is characterised in that: the substrate is sapphire, substrate
At least 250 μm of thickness.
11. a kind of packaging body of ultraviolet semiconductor light-emitting component comprising: bracket, one surface side of bracket be equipped with claim 1 ~
10 described in any item semiconductor light-emitting elements, wherein the second surface side first area of light-transmissive substrates and second area be all
It is directly contacted with transparent enclosure resin.
12. a kind of packaging body according to claim 11, it is characterised in that: the transparent enclosure resin is solid-state tree
Rouge.
13. a kind of packaging body according to claim 11, it is characterised in that: the potting resin outer surface is without optical lens
Mirror.
14. a kind of packaging body according to claim 11, it is characterised in that: the substrate is planar substrates.
15. a kind of packaging body according to claim 11, it is characterised in that: the potting resin is silicone resin or fluorine tree
Rouge.
16. a kind of packaging body according to claim 11, it is characterised in that: the bracket is ceramics bracket, bracket
It is connect respectively with two electrical opposite electrodes at least two conductive patterns.
17. a kind of packaging body according to claim 11, it is characterised in that: the outer surface side of the potting resin is
Light side.
18. a kind of packaging body according to claim 11, it is characterised in that: the potting resin with a thickness of 10 ~ 100
μm。
19. a kind of preparation method of ultraviolet semiconductor light-emitting component comprising following steps:
1) light-transmissive substrates are selected, light-transmissive substrates include opposite first surface side and second surface side, and the first of light-transmissive substrates
Surface side obtains semiconductor light emitting sequence；
2) the second surface side for defining light-transmissive substrates includes first area and second area, and wherein first area, which is formed, graphically covers
Film, second area form planless exposure mask；
3) the first step etching is carried out to the first area of pattern mask, etches scraggly pattern to obtain, removal first
The exposure mask in region and second area；
4) second area is blocked by exposure mask, carries out the second step etching to the scraggly topographical surface in first area；
5) in second area to light transmissive substrate and semiconductor light emitting sequence units, to obtain semiconductor light-emitting elements.
20. a kind of preparation method of ultraviolet semiconductor light-emitting component comprising following steps:
1) light-transmissive substrates are selected, light-transmissive substrates include opposite first surface side and second surface side, and the first of light-transmissive substrates
Surface side obtains semiconductor light emitting sequence；
2) the second surface side for defining light-transmissive substrates includes first area and second area, forms pattern mask in the firstth area
Domain, second area is without exposure mask；
3) the first step etching is carried out to the first area of pattern mask and second area, it is convex with the surface for obtaining first area
The pattern of recessed injustice, second area are etched to form groove simultaneously, remove the exposure mask of first area and second area；
4) the scraggly topographical surface in first area forms planless exposure mask, and exposure second area carries out second area
Second step etching removes the exposure mask of first area after the completion of etching；
5) in second area to light transmissive substrate and semiconductor light emitting sequence units, to obtain semiconductor light-emitting elements.
21. the method according to claim 20 or 21, it is characterised in that: the width of the second area is between 5 ~ 25
μm。
22. a kind of preparation method of the packaging body of ultraviolet semiconductor light-emitting component comprising appoint using described in claim 20 ~ 22
One method obtains ultraviolet semiconductor light-emitting component, obtains packaging body by pad pasting or mode for dispensing glue.
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| JP7425955B2 (en) | 2022-02-28 | 2024-02-01 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing the light-emitting device |
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