CN102709422A - Semiconductor light-emitting device and preparation method thereof - Google Patents
Semiconductor light-emitting device and preparation method thereof Download PDFInfo
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- CN102709422A CN102709422A CN2012102080548A CN201210208054A CN102709422A CN 102709422 A CN102709422 A CN 102709422A CN 2012102080548 A CN2012102080548 A CN 2012102080548A CN 201210208054 A CN201210208054 A CN 201210208054A CN 102709422 A CN102709422 A CN 102709422A
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Abstract
The embodiment pf the invention discloses a semiconductor light-emitting device and a preparation method thereof, and belongs to the optoelectronic technical field. The semiconductor light-emitting device comprises a substrate, an epitaxial layer on the substrate and an electrode on the epitaxial layer, wherein a plurality of cavities are formed in the substrate or between the substrate and a light emitting layer. The preparation method comprises the following steps: depositing the epitaxial layer on the substrate; and forming cavities in the substrate or between the light emitting layer and the substrate by an invisible cutting technology. According to the embodiment of the invention, the cavities are formed in the substrate or between the light emitting layer and the substrate, a reflection layer is arranged on the back of a chip so as to increase the light reflection of the back of the chip, and further the front of chip gives out more light. Moreover, the invisible cutting technology is adopted to form the cavities, equipment is not required to increase, and meanwhile, the preparation process is simple and stable. Therefore, the preparation method is suitable for batch production.
Description
Technical field
The present invention relates to the photoelectric device field, particularly a kind of light emitting semiconductor device and preparation method thereof.
Background technology
The luminous efficiency of light emitting semiconductor device mainly contains two aspect factors: interior quantum effect and outer quantum effect.With LED (Light Emitting Diode, light-emitting diode) is example, and at present, its internal quantum efficiency is generally higher.Such as, the internal quantum efficiency of typical GaN blue-ray LED can reach 80%, so it is little further to increase substantially the possibility of internal quantum efficiency of LED.And with respect to internal quantum efficiency, the external quantum efficiency of common LED (being also referred to as light extraction efficiency) is merely a few percent, also has to improve the space greatly.
The external quantum efficiency of light emitting semiconductor device is lower, and be because the refractive index of semi-conducting material and air differs greatly, for example: the cirtical angle of total reflection of GaN and air interface is 23 degree, and the light that produces at active area only has sub-fraction to inject in the air.In this case, prior art adopts surface coarsening and preparation del structure to improve the light extraction efficiency of chip usually.
The inventor finds that there is following problem at least in prior art in realizing process of the present invention:
In the process of surface coarsening, can use strong acid usually, easily damage caused on the surface of device.And preparation del structure need increase extra processing step, such as, laser cutting etc., complex process has increased cost and has introduced new uncertain factor.That is to say that above-mentioned two kinds of methods all have certain limitation.
Summary of the invention
For the method for getting optical efficiency that solves the raising light emitting semiconductor device that prior art exists has circumscribed problem, the embodiment of the invention provides a kind of light emitting semiconductor device and preparation method thereof.Said technical scheme is following:
On the one hand; The embodiment of the invention provides a kind of light emitting semiconductor device; This light emitting semiconductor device comprises: substrate, be located at the epitaxial loayer on the said substrate and be located at the electrode on the said epitaxial loayer; Said epitaxial loayer comprises first semiconductor layer, luminescent layer and second semiconductor layer that is deposited on successively on the said substrate, is provided with a plurality of cavitys between said substrate interior or said substrate and the said luminescent layer.
Preferably, said cavity is located at said luminescent layer below.
Preferably, said cavity is positioned at the side near said epitaxial loayer of said substrate.
Particularly, said substrate is processed by sapphire, silicon, carborundum or metal.
Particularly, said light emitting semiconductor device is light-emitting diode, laser diode or super-radiance light emitting diode.
Another aspect, the embodiment of the invention also provide a kind of preparation method of above-mentioned light emitting semiconductor device, and said method comprises:
Deposit epitaxial layers on substrate, said epitaxial loayer comprise first semiconductor layer, luminescent layer and second semiconductor layer that is deposited on successively on the said substrate;
Adopt stealthy cutting technique to form a plurality of cavitys in said substrate interior.
Particularly, the stealthy cutting technique of said employing forms a plurality of cavitys in said substrate interior or between said substrate and said luminescent layer, comprising:
Short-pulse laser is perhaps focused between said substrate and said luminescent layer in said substrate interior, and to form said cavity, laser pulse width is a psec.
Alternatively, at the stealthy cutting technique of said employing in said substrate interior or before or after forming a plurality of cavitys between said substrate and the said luminescent layer, said method also comprises:
Said substrate is carried out attenuate.
Alternatively, at the stealthy cutting technique of said employing in said substrate interior or before forming a plurality of cavitys between said substrate and the said luminescent layer, said method also comprises:
On said epitaxial loayer, make electrode.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is: the embodiment of the invention is through forming a plurality of cavitys in the substrate interior of light emitting semiconductor device or between substrate and luminescent layer; Make chip back form a kind of reflector; Thereby increased the reflection of chip back, and then increased the bright dipping of chip front side for light.In addition, the embodiment of the invention utilizes stealthy cutting technique to make cavity, need not increase new equipment; Cost is lower, and the preparation of cavity simultaneously can be processed on same stealthy cutting equipment with scribing, and the preparation process is simple; Process stabilizing is fit to a large amount of production.
Description of drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention; The accompanying drawing of required use is done to introduce simply in will describing embodiment below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of the light emitting semiconductor device that provides in the embodiment of the invention 1;
Fig. 2 is the structural representation of the light emitting semiconductor device that provides in the embodiment of the invention 2;
Fig. 3 is the preparation method's of the light emitting semiconductor device that provides in the embodiment of the invention 3 a flow chart;
Fig. 4 is the preparation method's of the light emitting semiconductor device that provides in the embodiment of the invention 4 a flow chart.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, will combine accompanying drawing that embodiment of the present invention is done to describe in detail further below.
Embodiment 1
As shown in Figure 1, the embodiment of the invention provides a kind of light emitting semiconductor device, and this light emitting semiconductor device comprises substrate 11, is located at the epitaxial loayer 12 on the substrate 11 and is located at the electrode 13 on the epitaxial loayer 12.Epitaxial loayer 12 comprises the first semiconductor layer 12a (being N type layer), luminescent layer 12b (being multiple quantum well layer) and the second semiconductor layer 12c (being P type layer) that is deposited on successively on the substrate 11, and these substrate 11 inside are provided with a plurality of cavitys 14.
In the concrete realization of another kind of the present invention, cavity 14 also can be located between substrate 11 and the luminescent layer 12b, such as being formed among the first semiconductor 12a.Also comprise under the situation that is arranged on other layer (for example resilient coating, undope layer) between substrate 11 and the luminescent layer 12b at epitaxial loayer, also can be formed in other layer.
Particularly, in the present embodiment, cavity 14 is located at luminescent layer 12b below.This cavity 14 can adopt stealthy cutting technique to form.
Preferably, cavity 13 is positioned at the side near epitaxial loayer 12 of substrate 11, can improve the reflecting effect to light like this, and strengthens the positive bright dipping of light emitting semiconductor device, reduces the side bright dipping, thereby further improves the light extraction efficiency of light emitting semiconductor device.
Need to prove that for the ease of explanation the present invention, the structure of the epitaxial loayer of present embodiment is an example with the most basic epitaxial layer structure only, but not as limitation of the present invention, it can also comprise resilient coating, layer or the like undopes.
Light emitting semiconductor device in the present embodiment includes but not limited to light-emitting diode, laser diode and super-radiance light emitting diode or the like.
The beneficial effect that the technical scheme that the embodiment of the invention provided is brought is: the embodiment of the invention is through forming a plurality of cavitys in the substrate interior of light emitting semiconductor device or between substrate and luminescent layer; Make chip back form a kind of reflector; Thereby increased the reflection of chip back, and then increased the bright dipping of chip front side for light.In addition, the embodiment of the invention utilizes stealthy cutting technique to make cavity, need not increase new equipment; Cost is lower, and the preparation of cavity simultaneously can be processed on same stealthy cutting equipment with scribing, and the preparation process is simple; Process stabilizing is fit to a large amount of production.
Embodiment 2
The embodiment of the invention is example with LED, and light emitting semiconductor device of the present invention is described.As shown in Figure 2; This LED comprises: substrate 21 and be deposited on GaN resilient coating 22 on the substrate 21, not Doped GaN layer 23, N-GaN layer 24, luminescent layer 25, P-GaN layer 26, ITO (Indium Tin Oxides successively; Tin indium oxide) electrode layer 27, be located at the P electrode 28 on the P-GaN layer 26, the passivation layer 210 of being located at the N electrode 29 on the N-GaN layer 24 and being located at whole epitaxial loayer upper surface, substrate 21 inside are provided with a plurality of cavitys 211.The epitaxial layer structure of above-mentioned LED is merely for example, not as limitation of the present invention.
In the present embodiment, cavity 211 adopts stealthy cutting technique formation and cavity 211 to be formed at (being that cavity is distributed on the plane vertical with the chip thickness direction) on the entire substrate 21.
Wherein, substrate 21 can be processed by sapphire, silicon, carborundum or metal, and passivation layer 210 can be processed by silicon dioxide.
The beneficial effect that the technical scheme that the embodiment of the invention provided is brought is: the embodiment of the invention is through forming a plurality of cavitys in the substrate interior of light emitting semiconductor device or between substrate and luminescent layer; Make chip back form a kind of reflector; Thereby increased the reflection of chip back, and then increased the bright dipping of chip front side for light.In addition, the embodiment of the invention utilizes stealthy cutting technique to make cavity, need not increase new equipment; Cost is lower, and the preparation of cavity simultaneously can be processed on same stealthy cutting equipment with scribing, and the preparation process is simple; Process stabilizing is fit to a large amount of production.
Embodiment 3
The embodiment of the invention provides a kind of preparation method of light emitting semiconductor device, is applicable to the light emitting semiconductor device that preparation embodiment 1 provides.As shown in Figure 3, this method comprises:
Step 301: deposit epitaxial layers on substrate, this epitaxial loayer comprise first semiconductor layer, luminescent layer and second semiconductor layer that is deposited on successively on the substrate.
Step 302: adopt stealthy cutting technique to form a plurality of cavitys in substrate interior or between substrate and luminescent layer.
Particularly, step 302 comprises:
Short-pulse laser is perhaps focused between substrate and luminescent layer in substrate interior, and to form cavity, the pulse duration of this short-pulse laser is a psec or shorter.This cavity can be regarded bubble one by one as, and its inner refractive index is less than the refractive index of substrate, and therefore, this cavity has certain reflex for the light from epitaxial loayer.
Particularly, the thickness that the power of short-pulse laser can substrate and the material type of substrate and set.
Preferably, before step 302, this method also comprises:
Substrate is carried out attenuate.Elder generation's attenuate forms cavity again, can avoid in thinning process, owing to the chip rupture that cavity causes, improves the rate of finished products of product.The step of certainly, substrate being carried out attenuate also can be carried out after step 302.
Particularly, this method also comprises: before step 302, on epitaxial loayer, make electrode; Alternatively, also can after step 302, on epitaxial loayer, make electrode.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is: the embodiment of the invention is through forming a plurality of cavitys in the substrate interior of light emitting semiconductor device or between substrate and luminescent layer; Make chip back form a kind of reflector; Thereby increased the reflection of chip back, and then increased the bright dipping of chip front side for light.In addition, the embodiment of the invention utilizes stealthy cutting technique to make cavity, need not increase new equipment; Cost is lower, and the preparation of cavity simultaneously can be processed on same stealthy cutting equipment with scribing, and the preparation process is simple; Process stabilizing is fit to a large amount of production.
Embodiment 4
The embodiment of the invention provides a kind of preparation method of light emitting semiconductor device, is applicable to the light emitting semiconductor device that preparation embodiment 2 provides.As shown in Figure 4, this method comprises:
Step 401: form epitaxial wafer.
Particularly; With the GaN epitaxial wafer is example; Can adopt MOCVD (Metal-organic Chemical Vapor Deposition; Metal organic chemical vapor deposition) method, growing low temperature GaN resilient coating 22, the GaN layer 23 that undopes, n-GaN layer 24, luminescent layer 25 and P-GaN layer 26 successively on substrate 21 form the GaN epitaxial wafer.
Wherein, substrate 21 can be sapphire, silicon, carborundum or metal substrate.
In concrete the realization, low temperature buffer layer 22 can be 1 μ m, and the GaN layer 23 that undopes can be 1 μ m, and n-GaN layer 24 can be 3 μ m, and luminescent layer 25 can be 150nm, and P-GaN layer 26 can be 300nm.
Step 402: the side to epitaxial wafer is carried out etching, forms table top.
Particularly, this step comprises: the GaN epitaxial wafer is carried out litho pattern preparation, a side of GaN epitaxial wafer is carried out the ICP etching, remove P-GaN, luminescent layer and the part N-GaN of a side, form table top, this table top until etching depth be 700nm-1500nm.
Step 403: at upper surface vapor deposition one deck ito thin film of epitaxial wafer.
Particularly, make the method vapor deposition ito thin film of deposited by electron beam evaporation at the upper surface of GaN epitaxial wafer, photoetching corrosion goes out the ITO figure, removes part ito thin film and the ito thin film on the table top on the P-GaN, formation ito transparent electrode layer on P type table top.Ito transparent electrode layer and P-GaN layer can form good Ohmic contact, can reduce touch voltage, thereby reduce the operating voltage of device.
Step 404: on n type layer, make the N electrode, on p type layer, make the P electrode.
Particularly; This step can comprise: on P-GaN layer, ITO layer and N-GaN layer, select the negative photoresist photoetching for use; Form groove in the place that P, N electrode will be set; After adopting electron-beam vapor deposition method evaporation metal CrTiAl
vapor deposition to accomplish then; Stripping photoresist, thus P electrode and N electrode formed.
Step 405: make passivation layer.
Particularly; This step can comprise: on chip, utilize PECVD (Plasma Enhanced Chemical Vapor Deposition; The plasma enhanced chemical vapor deposition method) covers layer of silicon dioxide (being passivation layer); Utilize photoetching technique that P electrode and N electrode are exposed then, make things convenient for later stage test and encapsulation.
So far, accomplish deposit epitaxial layers on substrate, and on epitaxial loayer, made the step of electrode.
Step 406: substrate is carried out attenuate, utilize the stealthy cutting technique of low-power then, between substrate interior or substrate and luminescent layer, form cavity.
Need to prove, substrate is carried out attenuate also can after cavity forms, carry out.
Step 407: scribing, sliver, test, sorting.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is: the embodiment of the invention is through forming a plurality of cavitys in the substrate interior of light emitting semiconductor device or between substrate and luminescent layer; Make chip back form a kind of reflector; Thereby increased the reflection of chip back, and then increased the bright dipping of chip front side for light.In addition, the embodiment of the invention utilizes stealthy cutting technique to make cavity, need not increase new equipment; Cost is lower, and the preparation of cavity simultaneously can be processed on same stealthy cutting equipment with scribing, and the preparation process is simple; Process stabilizing is fit to a large amount of production.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. light emitting semiconductor device; Said light emitting semiconductor device comprises substrate, is located at the epitaxial loayer on the said substrate and is located at the electrode on the said epitaxial loayer; Said epitaxial loayer comprises first semiconductor layer, luminescent layer and second semiconductor layer that is deposited on successively on the said substrate; It is characterized in that, be provided with a plurality of cavitys between said substrate interior or said substrate and the said luminescent layer.
2. light emitting semiconductor device according to claim 1 is characterized in that, said cavity is located at said luminescent layer below.
3. light emitting semiconductor device according to claim 1 is characterized in that, said cavity is positioned at the side near said epitaxial loayer of said substrate.
4. light emitting semiconductor device according to claim 1 is characterized in that said substrate is processed by sapphire, silicon, carborundum or metal.
5. light emitting semiconductor device according to claim 1 is characterized in that, said light emitting semiconductor device is light-emitting diode, laser diode or super-radiance light emitting diode.
6. preparation method like each described light emitting semiconductor device of claim 1-5; It is characterized in that; Said method comprises: deposit epitaxial layers on substrate, said epitaxial loayer comprise first semiconductor layer, luminescent layer and second semiconductor layer that is deposited on successively on the said substrate; Adopt stealthy cutting technique to form a plurality of cavitys in said substrate interior or between said substrate and said luminescent layer.
7. method according to claim 6 is characterized in that, the stealthy cutting technique of said employing forms a plurality of cavitys in said substrate interior or between said substrate and said luminescent layer, comprising:
Short-pulse laser is perhaps focused between said substrate and said luminescent layer in said substrate interior, and to form said cavity, laser pulse width is a psec.
8. method according to claim 6 is characterized in that, at the stealthy cutting technique of said employing in said substrate interior or before or after forming a plurality of cavitys between said substrate and the said luminescent layer, said method also comprises:
Said substrate is carried out attenuate.
9. method according to claim 6 is characterized in that, at the stealthy cutting technique of said employing in said substrate interior or before forming a plurality of cavitys between said substrate and the said luminescent layer, said method also comprises:
On said epitaxial loayer, make electrode.
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| CN102969413A (en) * | 2012-12-17 | 2013-03-13 | 中国科学院半导体研究所 | Manufacturing method of laser-induced air-gap light emitted diode |
| CN103165780A (en) * | 2013-03-04 | 2013-06-19 | 中国科学院半导体研究所 | Method for manufacturing brightness-improved GaN-based light emitting diode (LED) chip |
| CN105280769A (en) * | 2014-07-07 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED chip and method of increasing LED chip light extraction efficiency |
| CN105449062A (en) * | 2014-09-29 | 2016-03-30 | 展晶科技(深圳)有限公司 | Light emitting diode and manufacturing method thereof |
| CN106601876A (en) * | 2015-10-19 | 2017-04-26 | 映瑞光电科技(上海)有限公司 | LED chip structure and manufacturing method thereof |
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| CN105280769A (en) * | 2014-07-07 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED chip and method of increasing LED chip light extraction efficiency |
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| CN106601876A (en) * | 2015-10-19 | 2017-04-26 | 映瑞光电科技(上海)有限公司 | LED chip structure and manufacturing method thereof |
| CN109390444A (en) * | 2017-08-11 | 2019-02-26 | 南通同方半导体有限公司 | A kind of light emitting diode construction can increase LED chip light extraction |
| CN107863423A (en) * | 2017-10-26 | 2018-03-30 | 江苏新广联半导体有限公司 | The patterned preparation method of LED flip chip sapphire exiting surface |
| CN108087728A (en) * | 2017-12-13 | 2018-05-29 | 苏州吉赛电子科技有限公司 | LED chip and preparation method thereof |
| CN108538783A (en) * | 2018-06-15 | 2018-09-14 | 佛山市国星半导体技术有限公司 | A kind of stealthy cutting LED chip and preparation method thereof |
| CN111987201A (en) * | 2019-05-22 | 2020-11-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light emitting diode chip |
| CN113451493A (en) * | 2021-06-29 | 2021-09-28 | 厦门三安光电有限公司 | Deep ultraviolet light-emitting diode and light-emitting device thereof |
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Application publication date: 20121003 |