CN102122686A - Method for manufacturing light-emitting diode - Google Patents
Method for manufacturing light-emitting diode Download PDFInfo
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- CN102122686A CN102122686A CN 201110008604 CN201110008604A CN102122686A CN 102122686 A CN102122686 A CN 102122686A CN 201110008604 CN201110008604 CN 201110008604 CN 201110008604 A CN201110008604 A CN 201110008604A CN 102122686 A CN102122686 A CN 102122686A
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Abstract
The invention discloses a method for manufacturing a light-emitting diode, comprising the following steps of: providing a substrate; forming an N-type doped GaN layer on the surface of the substrate; forming a luminous unit on the N-type doped GaN layer; forming a P-type doped GaN layer on the surface of the luminous layer; forming a transparent conductive layer on the surface of the P-type doped GaN layer; determining positions of an N-type and/or a P-type electrode and the depth of a contact layer by utilizing a laser etching process; forming the P-type electrode, the N-type electrode and a pad by depositing metal material; and removing metal beyond the positions of the P-type electrode and the N-type electrode. In the method for manufacturing the light-emitting diode provided by the invention, the laser etching process is utilized to determine the positions of the P-type electrode and/or the N-type electrode and layer depth, and the use times of a mask lithography process can be greatly reduced, thus the manufacturing cost is reduced and the yield is improved.
Description
Technical field
The present invention relates to semiconductor lighting device technical field, be specifically related to the manufacture method of a kind of light-emitting diode (LED).
Background technology
Semiconductor light-emitting-diode abbreviates LED as.Diode by the compound of gallium (Ga) and arsenic (AS), phosphorus (P) is made can give off visible light when electronics and hole-recombination, thereby can be used for making light-emitting diode.Characteristics such as light-emitting diode (LED) is low in energy consumption with it as light source, life-span length, reliability height, many fields have in daily life obtained general approval, are used widely in electronic product, for example display backlight etc.
With based on semiconductor material with wide forbidden band nitrogenize sow (GaN) and indium nitrogenize to sow the light-emitting diode of (InGaN) be that the short-wave long light-emitting diodes such as near ultraviolet ray, blue-green and blueness of representative were used widely for the later stage in nineteen ninety, on basic research and commercial the application, obtained very much progress.The structure of the GaN based light-emitting diode of widespread usage as shown in Figure 1 at present, comprise Sapphire Substrate 10, n type GaN layer 201 and p type GaN layer 209, and the luminescence unit formed of the AlGaN layer 203 of the AlGaN layers 207 that mix by the p type in the middle of both, InGaN luminescent layer 205 (comprising single quantum hydrazine or the sub-hydrazine of volume) and the doping of n types, comprise electrically conducting transparent contact (TCO) layer 211 in addition, p type electrode 213 and n type electrode 215.
The manufacturing process of GaN based light-emitting diode mainly adopts semiconductor fabrication process, at first be the manufacturing of epitaxial wafer (epi-wafer), utilize mask lithography technology, etching and the metal deposition technologies such as (metal deposition) of multiple tracks (being generally 5 to 6 roads) to make p type electrode and n type electrode then.As everyone knows, in semiconductor fabrication process, the cost that photoresist is carried out patterned mask lithography technology mainly is the cost of manufacture of mask than higher.The manufacturing of existing GaN based light-emitting diode will be used the mask process of multistep, so manufacturing cost is higher, the cost reduction of the LED manufacturing enterprise that is unfavorable for and the lifting of the market competitiveness.
Summary of the invention
The object of the present invention is to provide a kind of manufacturing method for LED, determine the position and the contact layer degree of depth of p type electrode and/or n type electrode by utilizing laser ablation technology, can reduce the access times of mask lithography technology greatly, thereby reduce manufacturing cost, improve yield.
A kind of manufacturing method for LED provided by the invention comprises:
Substrate is provided;
Form the GaN layer that the n type mixes at substrate surface;
The GaN layer that mixes in described n type forms luminescence unit;
Form the GaN layer that the p type mixes on described luminescent layer surface;
The GaN laminar surface that mixes in described p type forms transparency conducting layer;
Utilize laser ablation technology to determine the position and the layer depth of n type and/or p type electrode;
Deposit metallic material forms p type electrode and n type electrode and pad;
With the metal removal beyond described p type electrode and the n type electrode position.
Optionally, described transparency conducting layer is transparent conductive oxide TCO, indium tin oxide ITO, semitransparent metal film or their combination.
Optionally, the described position that laser ablation technology determines n type and/or p type electrode and the step of layer depth utilized be, power by adjusting laser and the GaN that wavelength is optionally removed certain depth are to expose the step of GaN layer.
Optionally, described laser comprises single beam laser or multiple laser.
Optionally, the described laser that utilizes is purple laser or bluish-green laser.
Optionally, when utilizing laser ablation technology to determine n type electrode position and layer depth, the position of described p type electrode is determined by the processing step of mask, photoetching and the described transparency conducting layer of etching.
Optionally, when utilizing laser ablation technology to determine p type electrode position and layer depth, the position of described n type electrode is determined by the processing step of mask, photoetching and described transparency conducting layer of etching and described GaN layer.
Optionally, the described deposit metallic material step that forms p type electrode and n type electrode comprises:
Depositing silicon base oxide or nitride are as protective layer;
Utilize mask, photoetching and etching technics on described protective layer, to determine the position of p type electrode and n type electrode;
Plated metal.
Optionally, the method for the metal removal beyond described p type electrode and the n type electrode position comprised peel off the lift-off method, or method is removed in ultrasonic vibration.
Optionally, described etching comprises dry etching or wet etching.
Compared with prior art, the present invention has the following advantages:
Manufacturing method for LED of the present invention utilizes laser ablation technology to determine the position contact layer degree of depth of p type electrode and/or n type electrode, and then utilize technologies such as mask, photoetching, deposition to form metal electrode, utilize at last and peel off (lift-off) technology stripping electrode position metal in addition.The present invention is owing to adopted laser ablation technology to determine electrode position and layer depth, reduced multiple tracks utilized mask to define the mask process step of electrode position in the technology in the past, can simplified manufacturing technique, owing to reduced design, making and the use of mask, greatly reduced manufacturing cost and improved yield.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation in the GaN based light-emitting diode;
Fig. 2 to Figure 14 is the device profile schematic diagram of explanation method for manufacturing light-emitting embodiment according to the present invention;
Figure 15 to Figure 21 is the device profile schematic diagram of explanation another embodiment of method for manufacturing light-emitting according to the present invention.
Described diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit protection scope of the present invention at this.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public specific embodiment.
Fig. 2 to Figure 14 is the device profile schematic diagram of explanation method for manufacturing light-emitting of the present invention.As shown in the figure, manufacturing method for LED of the present invention at first provides substrate 100, and substrate 100 is sapphire, silicon or germanium.Then at the GaN layer 300 that utilizes epitaxy technique to mix in substrate 100 surface deposition n types, on GaN layer 300 surface that the n type mixes, utilize MOCVD (metallo-organic compound chemical vapor deposition) process deposits to comprise the luminescence unit 301 of the AlGaN layer that AlGaN layer, InGaN luminescent layer and the p type of the doping of n type mix, wherein the InGaN luminescent layer can be single quantum hydrazine or the sub-hydrazine structure of volume.Deposit the GaN layer 303 that the p type mixes again on luminescence unit 301 surfaces, as shown in Figure 2.
In other embodiments of the invention, the LED structure of utilizing technologies such as extension, MOCVD to form can also be other form, is not limited to said structure.For example between substrate 100 and GaN layer 300, can also have a resilient coating.
At the GaN layer 303 surface deposition transparency conducting layer 304 of p type doping (transparent metal), this layer can be transparent conductive oxide TCO, indium tin oxide ITO, semitransparent metal film or their combination, as shown in Figure 3 then.
In ensuing processing step, as shown in Figure 3, method of the present invention is utilized laser 200, by adjusting Wavelength of Laser (for example selecting purple laser or bluish-green laser) and power, etching GaN layer optionally, and the certain degree of depth of etching, expose the GaN layer material, to determine the position of n type electrode and/or p type electrode.
Need to prove that the live width of the present invention's preferred p type electrode and/or n type electrode mainly is that the diameter by laser beam is limited, the diameter that is to say laser beam has determined the live width CD of electrode.And laser beam can single beam laser, also can be multiple laser, and the multiple laser that for example utilizes optical splitter to obtain also can be to utilize a plurality of LASER Light Source.
Utilize laser to determine the position and the layer depth of n type electrode earlier, utilize mask process to determine the position of p type electrode again; Or utilize laser to determine the position and the layer depth of p type electrode earlier earlier, utilize mask process to determine the position of n type electrode again; Or utilize laser to determine the position and the layer depth of p type electrode and n type electrode simultaneously, all in protection scope of the present invention.Present embodiment is determined the position of n type electrode, is utilized mask process to determine that the position of p type electrode is that example describes again to utilize laser earlier.
In the present embodiment, utilize laser 200 to remove GaN layer 303, luminescence unit 301 that transparency conducting layers 304, p type mix, and optionally remove GaN layer 300 that the n type mixes to certain depth, to expose and to determine the position 501 of n type electrode, as shown in Figure 4.
Next determine the position of p type electrode,, utilize mask 51 at substrate surface coating photoresist 400, to photoresist 400 expose, photoetching processes such as development, photographic fixing, as shown in Figure 5.After development, the photographic fixing, just obtained patterned, as to determine p type electrode position photoresist layer 401, as shown in Figure 6.
Then, as shown in Figure 7, utilize etching technics, and with photoresist layer 401 as the barrier layer, the transparency conducting layer 304 that etching is exposed until exposing the GaN layer 303 that the p type mixes, thereby has obtained the position 502 of p type electrode.Etching technics can adopt dry method or wet etching.Then, remove photoresist 401, as shown in Figure 8.
Subsequently, utilize plasma reinforced chemical vapour deposition (PECVD) technology at substrate surface depositing silicon base oxide or nitride layer 305, present embodiment is an example for 2 layer 305 with silicon oxide sio.Pecvd process can improve the filling rate and the step covering power of silicon oxide layer 305, can evenly cover the bottom and the sidewall in the hole at substrate and n type electrode position 501 places, as shown in Figure 9.
In ensuing processing step, at substrate surface coating photoresist 400, utilize the second road mask 52, to photoresist 400 expose, photoetching processes such as development, photographic fixing, as shown in figure 10.After photoetching processes such as exposure, development, photographic fixing, obtained defining second graphical photoresist layer 402 of p type electrode and n type electrode position, as shown in figure 11.
Then, with graphical photoresist layer 402 as the barrier layer, silicon oxide layer 305 that etching is exposed and transparency conducting layer 304, until exposing the GaN layer 303 that the p type mixes, the GaN layer 300 that mixes with the n type, thus determined the position 502 and 501 of p type electrode and n type electrode, as shown in figure 12.
Then, as shown in figure 13, at substrate surface depositing metal layers 600, for example titanium and gold, it evenly covers graphical photoresist layer 402 and the position 502 of p type electrode and n type electrode and 501 bottom and sidewall, be deposited on the metal of 502 and 501 bottom and the GaN layer 303 that the p type mixes, the GaN layer 300 that mixes with the n type contacts.
Then, as peel ply, peel off the metal 600 beyond (lift-off) electrode position by photoresist layer 402, thus obtain p type electrode 700 and n type electrode 800 with and pad, as shown in figure 14.
In other embodiments of the invention, can also adopt the mode of ultrasonic vibration, to weaken the adhesive force on metal level 600 and photoresist surface, wait the mode of peeling off to remove electrode position metal 600 in addition to lift again, stay p type electrode 700 and n type electrode 800 and pad.
Figure 15 to Figure 21 is the device profile schematic diagram of explanation another embodiment of method for manufacturing light-emitting according to the present invention.As shown in figure 15, in the present embodiment, utilize laser 200, by adjusting Wavelength of Laser (for example selecting purple laser or bluish-green laser) and power, the while is the GaN layer 300 of etching n type doping optionally, the degree of depth that etching is certain, GaN layer 303 with the doping of p type, just utilize laser 200 etching simultaneously, determine the position and the layer depth of p type electrode and n type electrode, expose the GaN layer material.
Subsequently, utilize plasma reinforced chemical vapour deposition (PECVD) technology at substrate surface depositing silicon base oxide or nitride layer 305, present embodiment is with silicon oxide sio
2Layer 305 is an example.Pecvd process can improve the filling rate and the step covering power of silicon oxide layer 305, can evenly cover the bottom and the sidewall in the hole at substrate and n type electrode position 501 places, as shown in figure 16.
In ensuing processing step, at substrate surface coating photoresist 400, utilize mask 53 one, photoresist 400 is exposed, develop, photoetching process such as photographic fixing, as shown in figure 17.After photoetching processes such as exposure, development, photographic fixing, obtained defining the graphical photoresist layer 403 of p type electrode and n type electrode position, as shown in figure 18.
Then, with graphical photoresist layer 403 as mask (etching barrier layer), the silicon oxide layer 305 that etching is exposed, until exposing the GaN layer 303 that the p type mixes, the GaN layer 300 that mixes with the n type, thus determined the position 502 and 501 of p type electrode and n type electrode, as shown in figure 19.
Then, as shown in figure 20, at substrate surface depositing metal layers 600, for example titanium and gold, it evenly covers graphical photoresist layer 402 and the position 502 of p type electrode and n type electrode and 501 bottom and sidewall, be deposited on the metal of 502 and 501 bottom and the GaN layer 303 that the p type mixes, the GaN layer 300 that mixes with the n type contacts.
Then, remove electrode position metal 600 in addition.For example layer is peeled off the metal 600 beyond (lift-off) electrode position 402 as peel ply with photoresist, thus obtain p type electrode 700 and n type electrode 800 with and pad, as shown in figure 21.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art are not breaking away under the technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the protection range of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (10)
1. manufacturing method for LED comprises:
Substrate is provided;
Form the GaN layer that the n type mixes at substrate surface;
The GaN layer that mixes in described n type forms luminescence unit;
Form the GaN layer that the p type mixes on described luminescent layer surface;
The GaN laminar surface that mixes in described p type forms transparency conducting layer;
Utilize laser ablation technology to determine the position and the layer depth of n type and/or p type electrode;
Deposit metallic material forms p type electrode and n type electrode and pad;
With the metal removal beyond described p type electrode and the n type electrode position.
2. method according to claim 1 is characterized in that: described transparency conducting layer is transparent conductive oxide TCO, indium tin oxide ITO, semitransparent metal film or their combination.
3. method according to claim 1, it is characterized in that: the described position that laser ablation technology determines n type and/or p type electrode and the step of layer depth utilized be, power by adjusting laser and the GaN that wavelength is optionally removed certain depth are to expose the step of GaN layer.
4. method according to claim 3 is characterized in that: described laser comprises single beam laser or multiple laser.
5. method according to claim 4 is characterized in that: the described laser that utilizes is purple laser or bluish-green laser.
6. method according to claim 1 is characterized in that: when utilizing laser ablation technology to determine n type electrode position and layer depth, the position of described p type electrode is determined by the processing step of mask, photoetching and the described transparency conducting layer of etching.
7. method according to claim 1 is characterized in that: the step that described deposit metallic material forms p type electrode and n type electrode comprises:
Depositing silicon base oxide or nitride are as protective layer;
Utilize mask, photoetching and etching technics on described protective layer, to determine the position of p type electrode and n type electrode;
Plated metal.
8. method according to claim 1 is characterized in that: the method for the metal removal beyond described p type electrode and the n type electrode position is comprised peel off the lift-off method, or method is removed in ultrasonic vibration.
9. method according to claim 6 is characterized in that: described etching comprises dry etching or wet etching.
10. method according to claim 1 is characterized in that: when utilizing laser ablation technology to determine p type electrode position and layer depth, the position of described n type electrode is determined by the processing step of mask, photoetching and described transparency conducting layer of etching and described GaN layer.
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| CN 201110008604 CN102122686A (en) | 2011-01-17 | 2011-01-17 | Method for manufacturing light-emitting diode |
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| CN 201110008604 CN102122686A (en) | 2011-01-17 | 2011-01-17 | Method for manufacturing light-emitting diode |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022288A (en) * | 2011-09-27 | 2013-04-03 | 比亚迪股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN105206713A (en) * | 2014-06-30 | 2015-12-30 | 山东浪潮华光光电子股份有限公司 | Method of increasing GaN LED luminous efficiency and application thereof |
| CN105280766A (en) * | 2015-11-24 | 2016-01-27 | 厦门市三安光电科技有限公司 | Manufacture method of light-emitting diode |
| CN112563129A (en) * | 2020-12-11 | 2021-03-26 | 苏州工业园区纳米产业技术研究院有限公司 | Metal stripping process for silicon wafer with high-step structure |
| CN114654097A (en) * | 2022-02-24 | 2022-06-24 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000332290A (en) * | 1999-05-20 | 2000-11-30 | Matsushita Electric Ind Co Ltd | Nitride semiconductor element and its manufacture |
| CN1946509A (en) * | 2004-04-26 | 2007-04-11 | 惠普开发有限公司 | A method of laser etching a structure by first radiating areas of the structure for altering the crystallinity |
| CN101179087A (en) * | 2007-12-18 | 2008-05-14 | 李毅 | Silicon thin-film solar cell and manufacturing method therefor |
| CN101246822A (en) * | 2008-03-03 | 2008-08-20 | 苏州固锝电子股份有限公司 | Laser etching and trench digging method of semiconductor chip |
| US20090275159A1 (en) * | 2008-05-02 | 2009-11-05 | Nichia Corporation | Method for manufacturing nitride semiconductor laser element |
| CN101855737A (en) * | 2008-05-08 | 2010-10-06 | Lg伊诺特有限公司 | Light-emitting element and a production method therefor |
| CN101859861A (en) * | 2010-05-13 | 2010-10-13 | 厦门市三安光电科技有限公司 | GaN-based flip-chip light-emitting diode with double reflecting layers and preparation method thereof |
-
2011
- 2011-01-17 CN CN 201110008604 patent/CN102122686A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000332290A (en) * | 1999-05-20 | 2000-11-30 | Matsushita Electric Ind Co Ltd | Nitride semiconductor element and its manufacture |
| CN1946509A (en) * | 2004-04-26 | 2007-04-11 | 惠普开发有限公司 | A method of laser etching a structure by first radiating areas of the structure for altering the crystallinity |
| CN101179087A (en) * | 2007-12-18 | 2008-05-14 | 李毅 | Silicon thin-film solar cell and manufacturing method therefor |
| CN101246822A (en) * | 2008-03-03 | 2008-08-20 | 苏州固锝电子股份有限公司 | Laser etching and trench digging method of semiconductor chip |
| US20090275159A1 (en) * | 2008-05-02 | 2009-11-05 | Nichia Corporation | Method for manufacturing nitride semiconductor laser element |
| CN101855737A (en) * | 2008-05-08 | 2010-10-06 | Lg伊诺特有限公司 | Light-emitting element and a production method therefor |
| CN101859861A (en) * | 2010-05-13 | 2010-10-13 | 厦门市三安光电科技有限公司 | GaN-based flip-chip light-emitting diode with double reflecting layers and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022288A (en) * | 2011-09-27 | 2013-04-03 | 比亚迪股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN105206713A (en) * | 2014-06-30 | 2015-12-30 | 山东浪潮华光光电子股份有限公司 | Method of increasing GaN LED luminous efficiency and application thereof |
| CN105280766A (en) * | 2015-11-24 | 2016-01-27 | 厦门市三安光电科技有限公司 | Manufacture method of light-emitting diode |
| CN105280766B (en) * | 2015-11-24 | 2017-08-18 | 厦门市三安光电科技有限公司 | LED production method |
| CN112563129A (en) * | 2020-12-11 | 2021-03-26 | 苏州工业园区纳米产业技术研究院有限公司 | Metal stripping process for silicon wafer with high-step structure |
| CN114654097A (en) * | 2022-02-24 | 2022-06-24 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
| CN114654097B (en) * | 2022-02-24 | 2023-03-07 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
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Application publication date: 20110713 |