CN102931300A - Method for manufacturing back metallic reflector array in manufacturing process of GaN-based LED - Google Patents
Method for manufacturing back metallic reflector array in manufacturing process of GaN-based LED Download PDFInfo
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- CN102931300A CN102931300A CN201210472863XA CN201210472863A CN102931300A CN 102931300 A CN102931300 A CN 102931300A CN 201210472863X A CN201210472863X A CN 201210472863XA CN 201210472863 A CN201210472863 A CN 201210472863A CN 102931300 A CN102931300 A CN 102931300A
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Abstract
The invention discloses a method for manufacturing a metallic reflector array in the manufacturing process of a GaN-based LED. The GaN-based LED comprises a substrate, an epitaxial layer, a transparent electrode layer, a metal electrode layer and an oxide protective layer. The method for manufacturing the metallic reflector array comprises the following steps: preparing an array pattern mask on the other side, opposite to the epitaxial layer, of the substrate by photoresist; etching an array pattern structure on the substrate through the etching process by using the array pattern mask; forming a metallic reflector on the array pattern structure; and removing the photoresist for stripping the metallic reflector on the surface of the photoresist, so as to obtain the final metallic reflector.
Description
Technical field
The present invention relates to the LED(light-emitting diode) on the manufacture method of metallic reflector, especially relate to a kind of GaN(gallium nitride) manufacture method of metallic reflector array in the basic LED manufacturing process.
Background technology
Recently LED is used in cell phone, digital camera, personal digital assistant, traffic lights, automobile etc. on a large scale.Because the brightness of the light that sends is sufficient not for the LED that is used for this application, so can be used for needing higher brightness before other application examples such as the general lighting at LED.
The III-V group iii v compound semiconductor material that all is based on GaN of at present blue-ray LED use; Because the P type GaN layer hole concentration of GaN epitaxial wafer is little, and P type GaN layer thickness is less than 0.3 μ m, and the overwhelming majority is luminous to appear from P type GaN layer, and P type GaN layer has absorption to light inevitably, cause the led chip external quantum efficiency not high, greatly reduce the luminous efficiency of LED.Adopt the ITO layer higher as the transmissivity of current extending, but cause LED voltage higher, the life-span also is affected.In addition, under applied voltage, owing to exist current spread inhomogeneous, some regional current densities are very large, affect the LED life-span.In a word, quantum efficiency aspect externally, existing GaN base LED still seems not enough, and is relevant with the electric current non-uniform Distribution on the one hand, then is on the other hand and is emitted to electrode when light and can absorbed relevant by electrode itself.
For brightness and the power output that improves light-emitting diode, can make backside reflection layer at the substrate back of GaN base LED, for example by the following method: the direct evaporation metal reflector, the back side behind (1) attenuate; (2) back side evaporation Bragg reflecting layer (Bragg Reflector) behind the attenuate; (3) back side evaporation Bragg reflecting layer behind the attenuate and metal level combination.
In the said method, metallic reflector is that therefore, the present invention improves mainly for method (1) with respect to a kind of reflectorized material that Bragg reflecting layer is easier to realize, cost is lower.The method in direct evaporation metal reflector, the known back side is the material such as direct evaporation metal silver or aluminium on the wafer behind the attenuate, but, because the adhesiving effect of metal and Sapphire Substrate is bad, the technique that also has is very thin one deck nickel, chromium or the transparent oxide layer etc. of first evaporation before evaporation silver and aluminium, to improve adhesiveness.There is following problem in the method in known direct evaporation metal reflector, this back side: (1) metal and Sapphire Substrate adhere to bad, when the led chip pour mask is to the blue film, often can occur sorting later metallic reflector be bonded to phenomenon on the blue film, obscission namely appears; (2) add nickel, chromium or transparent oxide layer after, the effect of metallic reflector can obviously reduce, and has not reached preferably brightening effect.
Summary of the invention
The object of the invention is to propose the manufacture method of the metallic reflector array in a kind of GaN base LED manufacturing process, can namely reach catoptrical purpose, guarantee that again led chip the phenomenon that metallic reflector comes off can not occur when adhering to blue film.
For reaching this purpose, the present invention by the following technical solutions:
The manufacture method of the metallic reflector array in a kind of GaN base LED manufacturing process, described GaN base LED comprises substrate, epitaxial loayer, transparent electrode layer, metal electrode layer and protective oxide film, the manufacture method of wherein said metallic reflector array comprises step:
With photoresist at substrate, relative with described epitaxial loayer another side preparation array pattern mask;
By etching technics, by means of described array pattern mask, etch the array pattern structure at substrate;
Form metallic reflector in described array pattern structure;
Remove photoresist in order to the metallic reflector on photoresist surface is peeled off, thereby obtain final metallic reflector.
Further, what described etching technics adopted is dry etch process, and what described dry etch process adopted is the ICP etching apparatus.
Further, described " with photoresist at substrate, relative with described epitaxial loayer another side preparation array pattern mask " comprises step: form photoresist layer at substrate, relative with described epitaxial loayer another side, wherein said formation photoresist layer further comprises gluing and front baking; Utilize mask, by photoresist layer is carried out exposing operation, development operation prepares the array pattern mask.
Further, described substrate is Sapphire Substrate, and described epitaxial loayer comprises N-type GaN layer, multiple quantum well layer and P type GaN layer, and described metallic reflector is the metal level with low absorptivity and high reflectance, and described transparent electrode layer is the ITO electrode layer.
Further, described metallic reflector is made by the alloy of following metal material or following metal material: Al, Au, Ag, Ni, W, Ti and Pt; Described metal electrode layer is made by the alloy of following metal material or following metal material: Ni, Au, Ti, Al.
Further, the operation of described " forming metallic reflector in described array pattern structure " may further comprise the steps: by evaporation process on described array pattern structure the plated metal reflector, form metallic reflector by vacuum sputtering technique in described array pattern structure.
Accordingly; the invention allows for a kind of GaN base LED; it comprises substrate, epitaxial loayer, transparent electrode layer, metal electrode layer and protective oxide film, and wherein another side substrate, relative with described epitaxial loayer at described GaN base LED has the metallic reflector of making according to manufacture method mentioned above.
Further, described substrate is Sapphire Substrate, and described epitaxial loayer comprises N-type GaN layer, multiple quantum well layer and P type GaN layer, and described metallic reflector is the metal level with low absorptivity and high reflectance, and described transparent electrode layer is the ITO electrode layer.
Further, described metallic reflector is made by the alloy of following metal material or following metal material: Al, Au, Ag, Ni, W, Ti and Pt.
Further, described metal electrode layer is made by the alloy of following metal material or following metal material: Ni, Au, Ti, Al.
The manufacture method of the metallic reflector array in the GaN base LED manufacturing process that the present invention proposes has following features: by carry out first the etching of patterned structures at substrate back, afterwards again the metallic reflector evaporation in this patterned structures, form the metallic reflector array, guaranteed that led chip the metal level obscission can not occur when adhering to blue film.
Description of drawings
Fig. 1 is the structural representation according to the GaN base LED of the first embodiment of the present invention;
Fig. 2 a-2d is each schematic diagram step by step according to the manufacture method of the metallic reflector array in the GaN of the first embodiment of the present invention base LED manufacturing process;
Fig. 3 is the making flow chart according to the metallic reflector array in the GaN base LED manufacturing process of the first embodiment of the present invention;
Fig. 4 is the structural representation according to the GaN base LED of second embodiment of the invention.
The technical characterictic that Reference numeral referred to respectively among the figure is:
10, GaN base LED; 11, substrate; 12, N-type GaN layer; 13, multiple quantum well layer; 14, P type GaN layer; 15, transparent electrode layer 15; 16, metal electrode layer; 17, protective oxide film; 18, epitaxial loayer;
301, substrate; 309, mask; 310, photoresist layer; 311, metallic reflector;
40, GaN base LED; 41, substrate; 42, N-type GaN layer; 43, multiple quantum well layer; 44, P type GaN layer; 45, transparent electrode layer; 46, metal electrode layer; 47, protective oxide film; 48, epitaxial loayer; 49, metallic reflector.
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.Be understandable that specific embodiment described herein only is used for explaining the present invention, but not limitation of the invention.Also need to prove in addition, for convenience of description, only show part related to the present invention in the accompanying drawing but not whole technique or structure.
Fig. 1-3 shows the first embodiment of the present invention.
Fig. 1 shows the structure according to the GaN base LED of the first embodiment of the present invention; as shown in Figure 1, comprise according to the described GaN base of first embodiment of the present invention LED 10: substrate 11, epitaxial loayer 18, transparent electrode layer 15, metal electrode layer 16 and protective oxide film 17.According to the first embodiment, described epitaxial loayer 18 comprises N-type GaN layer 12, multiple quantum well layer 13, and P type GaN layer 14.Preferably, described transparent electrode layer 15 is ITO(Indium Tin Oxide) electrode layer.
In the present embodiment, described substrate 11 is Sapphire Substrate; In other embodiments, described substrate 11 can also be made by other material, and described other material is carborundum or silicon chip for example.
In the present embodiment, described metal electrode layer 16 can be made by the alloy of following metal material or following metal material: Ni, Au, Ti, Al.
Preferably, can adopt metal organic chemical vapor deposition (MOCVD) method to form described epitaxial loayer 18 at substrate.
Fig. 2 a-2d show according to the manufacture method of the metallic reflector array in the GaN of the first embodiment of the present invention base LED manufacturing process each step by step, and Fig. 3 shows the making flow process according to the metallic reflector array in the GaN base LED manufacturing process of the first embodiment of the present invention.
Referring to Fig. 2 a-2d and Fig. 3, may further comprise the steps according to the manufacture method of the metallic reflector array of the first embodiment of the present invention:
The first step: preparation array pattern mask, shown in the step 31 of Fig. 3.
Referring to Fig. 2 a, in the present embodiment, another side substrate 301, relative with described epitaxial loayer at GaN base LED prepares the array pattern mask with photoresist.
Particularly, this step can followingly be carried out: at first, form photoresist layer 310 at substrate 301, relative with described epitaxial loayer another side; Then, utilize mask 309, on mask aligner, photoresist layer 310 is carried out exposing operation; After described exposing operation, thereby utilize developer solution to carry out development operation so that the potential array pattern preparation array pattern mask that in photoresist layer 310, forms after showing exposure.
Preferably, the operation of described " form photoresist layer 310 " can followingly be carried out: at first, adopt spin-coating method, utilize sol evenning machine spin coating photoresist (for example polyimides) equably on substrate, for example, described sol evenning machine rotating speed is 3700 rev/mins; Then, the product that scribbles photoresist is put into baking oven carry out the front baking operation, for example, the condition of described front baking operation is: stoving time is 30 minutes under 170 ℃ temperature.
Second step: etch the array pattern structure at substrate, shown in the step 32 of Fig. 3.
Referring to Fig. 2 b, by etching technics, by means of described array pattern mask (photoresist layer 310 after namely developing), etch the array pattern structure at substrate 301.In the present embodiment, what described etching technics adopted is dry etch process, for example adopts ICP(inductively coupled plasma) etching apparatus etches described array pattern structure at substrate.In other embodiments, can also adopt other lithographic method, for example wet etching method.
Preferably, can also adjust ICP etching program, in the situation that guarantees given pace, reduce the damage that photoresist layer 310 is subject in the etching process.
The 3rd step: form metallic reflector, shown in the step 33 of Fig. 3.
Referring to Fig. 2 c, in the present embodiment, by evaporation process on described array pattern structure plated metal reflector 311.Wherein, described metallic reflector 311 is the metal levels with low absorptivity and high reflectance.
As a kind of preferred implementation, described metallic reflector 311 is made by the alloy of following metal material or following metal material: Al, Au, Ag, Ni, W, Ti and Pt.
As another kind of preferred implementation, can come to form metallic reflector 311 in described array pattern structure by vacuum sputtering technique.Certainly, it is evident that, can also form metallic reflector 311 in described array pattern structure by other technique known in those skilled in the art.
The 4th step: remove photoresist, form final metallic reflector, shown in the step 34 of Fig. 3.
Referring to Fig. 2 d, in the present embodiment, adopt the wet method degumming process, namely the described GaN base LED product behind the formation metallic reflector 311 is immersed in the liquid that removes photoresist, remove photoresist layer in order to the metallic reflector on photoresist layer surface is peeled off, thereby obtain final metallic reflector.
As another kind of preferred implementation, can also adopt the dry method degumming process, remove the metallic reflector on photoresist layer and stripping photolithography glue-line surface, thereby obtain final metallic reflector.
So far, finished making according to the metallic reflector array in the described GaN of the first embodiment of the present invention base LED manufacturing process.
Fig. 4 shows the second embodiment of the present invention.
Fig. 4 is the structural representation according to the GaN base LED of second embodiment of the invention.As shown in Figure 4; the described GaN of present embodiment base LED 40 comprises: substrate 41, epitaxial loayer 48, transparent electrode layer 45, metal electrode layer 46 and protective oxide film 47, wherein the substrate 41 of described GaN base LED, the another side relative with described epitaxial loayer 48 have the metallic reflector 49 of making according to the described manufacture method of the first embodiment.
In a second embodiment, described substrate 41 is Sapphire Substrate; In other embodiments, described substrate 41 can also be made by other material, and described other material is carborundum or silicon chip for example.
In the present embodiment, described epitaxial loayer 48 comprises N-type GaN layer 42, multiple quantum well layer 43, and P type GaN layer 44; Described transparent electrode layer 45 is ITO electrode layers.
Preferably, described metallic reflector 49 is the metal levels with low absorptivity and high reflectance.Wherein, described metallic reflector 49 can be made by the alloy of following metal material or following metal material: Al, Au, Ag, Ni, W, Ti and Pt.
Preferably, described metal electrode layer 46 is made by the alloy of following metal material or following metal material: Ni, Au, Ti, Al.
Preferably, adopt metal organic chemical vapor deposition (MOCVD) method to form described epitaxial loayer 48 at substrate.
Compare with the manufacture method of metallic reflector in the GaN of the prior art base LED manufacturing process, the manufacture method of metallic reflector array proposed by the invention is by carrying out first the etching of patterned structures at substrate back, afterwards again the metallic reflector evaporation in this patterned structures, form the metallic reflector array, namely reached the light reflecting effect of metallic reflector, guaranteed that again led chip the metal level obscission can not occur when adhering to blue film.In addition, depth-to-width ratio and spacing distance by control metallic reflector array structure can reach the reflectivity that whole evaporation metals reflector, the normal back side reaches.
Notice that above-mentioned only is preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that to the invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious variations, readjust and substitute and can not break away from protection scope of the present invention.Therefore, although by above embodiment the present invention has been carried out comparatively detailed explanation, the present invention is not limited only to above embodiment, in the situation that does not break away from the present invention's design, can also comprise more other equivalent embodiment, and scope of the present invention is determined by appended claim scope.
Claims (10)
1. the manufacture method of the metallic reflector array in the GaN base LED manufacturing process; described GaN base LED comprises substrate, epitaxial loayer, transparent electrode layer, metal electrode layer and protective oxide film, and the manufacture method of wherein said metallic reflector array comprises step:
With photoresist at substrate, relative with described epitaxial loayer another side preparation array pattern mask;
By etching technics, by means of described array pattern mask, etch the array pattern structure at substrate;
Form metallic reflector in described array pattern structure;
Remove photoresist in order to the metallic reflector on photoresist surface is peeled off, thereby obtain final metallic reflector.
2. manufacture method according to claim 1 is characterized in that, what described etching technics adopted is dry etch process, and what described dry etch process adopted is the ICP etching apparatus.
3. manufacture method according to claim 1 is characterized in that, described " with photoresist at substrate, relative with described epitaxial loayer another side preparation array pattern mask " comprises step:
Form photoresist layer at substrate, relative with described epitaxial loayer another side, wherein said formation photoresist layer further comprises gluing and front baking;
Utilize mask, by photoresist layer is carried out exposing operation, development operation prepares the array pattern mask.
4. manufacture method according to claim 1, it is characterized in that, described substrate is Sapphire Substrate, described epitaxial loayer comprises N-type GaN layer, multiple quantum well layer and P type GaN layer, described metallic reflector is the metal level with low absorptivity and high reflectance, and described transparent electrode layer is the ITO electrode layer.
5. manufacture method according to claim 1 is characterized in that, described metallic reflector is made by the alloy of following metal material or following metal material: Al, Au, Ag, Ni, W, Ti and Pt; Described metal electrode layer is made by the alloy of following metal material or following metal material: Ni, Au, Ti, Al.
6. manufacture method according to claim 1, it is characterized in that, the operation of described " forming metallic reflector in described array pattern structure " may further comprise the steps: by evaporation process on described array pattern structure the plated metal reflector, form metallic reflector by vacuum sputtering technique in described array pattern structure.
7. GaN base LED; comprise substrate, epitaxial loayer, transparent electrode layer, metal electrode layer and protective oxide film, wherein another side substrate, relative with described epitaxial loayer at described GaN base LED has the metallic reflector of making according to manufacture method claimed in claim 1.
8. GaN according to claim 7 base LED, it is characterized in that, described substrate is Sapphire Substrate, described epitaxial loayer comprises N-type GaN layer, multiple quantum well layer and P type GaN layer, described metallic reflector is the metal level with low absorptivity and high reflectance, and described transparent electrode layer is the ITO electrode layer.
9. GaN base LED according to claim 8 is characterized in that described metallic reflector is made by the alloy of following metal material or following metal material: Al, Au, Ag, Ni, W, Ti and Pt.
10. GaN base LED according to claim 7 is characterized in that described metal electrode layer is made by the alloy of following metal material or following metal material: Ni, Au, Ti, Al.
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| CN105914291A (en) * | 2016-07-13 | 2016-08-31 | 厦门理工学院 | Method for precisely preparing LED chip reflecting layer and LED chip |
| CN106097904A (en) * | 2016-07-15 | 2016-11-09 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode display part and preparation method thereof |
| CN106129232A (en) * | 2016-07-13 | 2016-11-16 | 厦门理工学院 | The reflecting layer preparation method of wafer scale LED chip and LED chip |
| CN108269885A (en) * | 2016-12-30 | 2018-07-10 | 晶能光电（江西）有限公司 | A kind of single side light extracting LED chip preparation method |
| CN108807611A (en) * | 2018-06-19 | 2018-11-13 | 扬州乾照光电有限公司 | A kind of LED chip and production method |
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| CN108269885A (en) * | 2016-12-30 | 2018-07-10 | 晶能光电（江西）有限公司 | A kind of single side light extracting LED chip preparation method |
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