WO2018113328A1

WO2018113328A1 - Light-emitting diode and manufacturing method therefor

Info

Publication number: WO2018113328A1
Application number: PCT/CN2017/097841
Authority: WO
Inventors: 卢怡安; 吴俊毅; 王笃祥
Original assignee: 厦门三安光电有限公司
Priority date: 2016-12-22
Filing date: 2017-08-17
Publication date: 2018-06-28
Also published as: CN106784185A; CN106784185B

Abstract

A manufacturing method for a light-emitting diode, comprising the steps of: providing an epitaxial structure (120) sequentially comprising a growth substrate (100), a first type semiconductor layer (121 and 122), an active layer (123), and a second type semiconductor layer (124 and 125); defining a solder pad electrode area (140a) and an extended electrode area (140b) on the surface of the second type semiconductor layer, sequentially forming a metal mask layer (130b) and an extended electrode (141b) on the extended electrode area, the area of the metal mask layer completely covering the extended electrode area and extending outwards, and the area of the metal mask layer > the area of the extended electrode; providing a temporary substrate (200), joining same with the epitaxial structure, removing the growth substrate, and exposing the surface of the first type semiconductor layer; providing an electrically-conductive substrate (180), joining same with the epitaxial structure, removing the temporary substrate, and exposing a part of the surface of the second type semiconductor layer, a part of the metal mask layer, and the extended electrode; chemically etching the exposed surface of the second type semiconductor layer to form a roughened surface; and removing the exposed metal mask layer.

Description

Light-emitting diode and manufacturing method thereof

[0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to a light emitting diode and a method of fabricating the same.

Background technique

[0002] Light-emitting diodes are widely used in lighting, home appliances, display screens, and indicator lights because of their low energy consumption, long life, good stability, small size, fast response, and stable luminous length. technical problem

[0003] The light-increasing process of the existing light-emitting diodes generally produces a roughened surface on the light-emitting surface of the device to improve the light-emitting efficiency. The area of the pad electrode and the extension electrode is usually avoided in the roughened etching region to prevent the roughened surface from affecting the flat surface of the electrode and the extension strip. Generally, a common process uses a photoresist as a mask, and the photoresist is covered in a place to be covered, usually at the position of the electrode and the extension bar, and is larger than or equal to the area of the electrode and the extension strip, and then the roughening process is performed. . However, in the high-brightness light-emitting diodes fabricated by the substrate transfer technology, since the wafers subjected to the bonding process have different warp patterns, the yellow light alignment before and after the bonding often has a misalignment problem, so that the extended electrodes are not well received. The coverage causes the roughening solution to etch below the electrode extension, creating a risk of fragile or shedding of the metal contact.

Problem solution

Technical solution

In view of the above problems, the present invention provides a light-emitting diode and a manufacturing method for reducing rough side etching.

[0005] The technical solution of the present invention is: a method for fabricating a light emitting diode, comprising the steps of: (1) providing an epitaxial structure, which in turn comprises a growth substrate, a first type semiconductor layer, an active layer and a second type semiconductor layer;

(2) defining a pad electrode region and an extension electrode region on a surface of the second type semiconductor layer, and sequentially forming a metal mask layer and an extension electrode on the extension electrode region, an area of the metal mask layer Fully covering the extended electrode region and extending outward, the area of the metal mask layer > the area of the extended electrode;

(3) providing a temporary substrate, bonding the epitaxial structure, and removing the growth substrate to expose a surface of the first type semiconductor layer; ( ₄₎ providing a conductive substrate, and the epitaxial Structural bonding

Removing the lining substrate to expose a portion of the surface of the second type semiconductor layer and a portion of the metal mask layer And an extension electrode; (5) using a chemically etched exposed surface of the second type of semiconductor layer to form a roughened surface; (6) removing the exposed metal mask layer.

[0006] Preferably, the thickness of the metal mask layer formed in the step (2) is 10 to 200 nm, more preferably 50 to 100 nm.

[0007] Preferably, the edge of the metal mask layer formed in the step (2) is at least 2 micrometers, preferably 2 to 10 micrometers, beyond the edge of the extension electrode.

[0008] Preferably, in the step (2), a metal mask layer is formed in the pad electrode region and the extended electrode region.

[0009] Preferably, the manufacturing method of the light emitting diode further comprises the step (7): forming a pad electrode in a pad electrode region of the second type semiconductor layer.

[0010] Preferably, the metal mask layer formed in the step (2) forms an ohmic contact with the second type semiconductor layer.

[0011] Preferably, the material of the metal mask layer formed in the step (2) is Au, Cr, Ni, Ti or Pd.

Preferably, Au is used.

[0012] Preferably, in the step (2), a metal mask layer and an electrode material layer are formed in the pad electrode region, and the metal mask layer is overlapped with the pad electrode region, and the electrode material is The material of the layer is the same as the material of the extension electrode.

[0013] Another technical solution of the present invention is: a method for fabricating a light emitting diode, comprising the steps of: (1) providing an epitaxial structure, comprising a growth substrate, a first type semiconductor layer, an active layer, and a second type semiconductor layer in this order; (2) defining a pad electrode region and an extension electrode region on a surface of the second type semiconductor layer, and sequentially forming an extension electrode and a metal mask layer on the extension electrode region, the metal mask layer The area completely covers the extended electrode region and extends outward, the area of the metal mask layer > the area of the extended electrode; (3) providing a temporary substrate, bonding it to the epitaxial structure, and removing the growth Substrate, exposing a surface of the first type of semiconductor layer; (4) providing a conductive substrate, bonding the epitaxial structure, removing the germanium substrate, exposing a portion of the surface and metal of the second type semiconductor layer a mask layer; (5) chemically etching the exposed surface of the second type of semiconductor layer to form a roughened surface; (6) removing the metal mask layer.

[0014] Preferably, the thickness of the metal mask layer formed in the step (2) is 10 to 200 nm, and more preferably 50. ~100nm.

[0015] Preferably, the edge of the metal mask layer formed in the step (2) is at least 2 micrometers, preferably 2 to 10 micrometers, beyond the edge of the extension electrode.

[0016] Preferably, in the step (2), a metal mask layer is formed on the pad electrode region and the extended electrode region.

[0017] Preferably, the method for fabricating the light emitting diode further comprises the step (7): forming a pad electrode in a pad electrode region of the second type semiconductor layer.

[0018] Preferably, the metal mask layer formed in the step (2) forms an ohmic contact with the second type semiconductor layer.

[0019] Preferably, the material of the metal mask layer formed in the step (2) is selected from Au, Cr, Ni, Ti or Pd, and Cr is preferably used.

In some embodiments, in the step (2), the electrode region is first expanded to form an extension electrode, and then a metal mask layer is formed on the surface of the second type semiconductor layer of the pad electrode region and the extension electrode.

[0021] In other embodiments, in the step (2), a metal mask layer is formed only in the extended electrode region, and the pad electrode region does not form a metal mask layer, and the step (5) is first The pad electrode region forms a photoresist layer mask and is etched, and the step (6) further includes removing the photoresist mask layer.

Advantageous effects of the invention

Beneficial effect

[0022] The manufacturing method of the light-emitting diode of the present invention firstly forms a metal mask before the bonding process, extends the metal region, directly uses the metal as a rough mask layer, reduces misalignment and roughening side etching problems, and improves the light-emitting diode Quality and yield.

[0023] According to another embodiment of the invention, a light emitting diode structure fabricated using the method according to the invention is provided.

[0024] Other features and advantages of the invention will be set forth in the description in the description which follows. The objectives and other advantages of the invention will be realized and attained by the <RTI

Brief description of the drawing

DRAWINGS The drawings are intended to provide a further understanding of the invention, and are intended to be a part of the description of the invention. In addition, the drawing figures are a summary of the description and are not drawn to scale.

1 is a flow chart showing the fabrication of a light emitting diode according to Embodiment 1 of the present invention.

2 to 13 are schematic views showing the process of a light emitting diode according to Embodiment 1 of the present invention.

14 is a flow chart showing the fabrication of a light emitting diode according to Embodiment 2 of the present invention.

15 to 24 are views showing a manufacturing process of a light emitting diode according to Embodiment 2 of the present invention.

25 to 28 are partial schematic views showing a manufacturing process of a light emitting diode according to Embodiment 3 of the present invention.

Embodiments of the invention

The embodiments of the present invention will be described in detail below with reference to the accompanying drawings and embodiments, in which the technical solutions of the present invention can be used to solve the technical problems, and the implementation of the technical effects can be fully understood and implemented. It should be noted that the various embodiments of the present invention and the various features of the various embodiments may be combined with each other as long as they do not constitute a conflict, and the technical solutions formed are all within the protection scope of the present invention.

1 is a flow chart of manufacturing a light emitting diode according to a first preferred embodiment of the present invention, which mainly includes steps S110 to S160, and quaternary light emitting diodes are taken as an example below with reference to FIGS. 2-13. Detailed description

[0033] Step S110: Providing a growth substrate 100 on which the light-emitting epitaxial structure 120 is formed. The growth substrate 100 is preferably made of a III-V compound semiconductor material, such as gallium arsenide, indium phosphide (InP), gallium phosphide or sapphire. The luminescent epitaxial structure may be a conventional epitaxial structure, and may generally include n. A semiconductor layer, an active layer, and a p-type semiconductor layer. Specifically, first, the growth substrate 100 is provided, and the etch stop layer 110 is grown directly on the surface of the growth substrate 100 by, for example, deposition. Next, an n-type ohmic contact layer 121 is formed on the etch stop layer 101, wherein the material of the n-type ohmic contact layer 121 may be, for example, gallium arsenide, gallium arsenide or aluminum gallium phosphide. Next, the light-emitting epitaxial structure 120 is grown on the n-type ohmic contact layer 121. Preferably, the light-emitting epitaxial structure 120 may include an n-type confinement layer 122 and an active layer 123 stacked on the surface of the n-type ohmic contact layer 121 in sequence. The p-type confinement layer 124 and the window layer 125 are as shown in FIG. The material of the N-type confinement layer 122 may be, for example, aluminum gallium arsenide Al _x Ga _x As, x>0.4 or aluminum gallium indium phosphide (Al _x Ga , _ _x ) _y In , _ _y P, x>0.4; The material of the p-type confinement layer 124 may be, for example, aluminum gallium arsenide (Al _x G _ai — _x As, x>0.4) or phosphating. Aluminum gallium indium (Al _x G _ai _J _y I _ni _ _y P, x>0.4, the material of the active layer 123 may be, for example, aluminum gallium indium phosphide ((Al _x Ga _lx ) _y In _ly P, x < 0.5) The material of the window layer 125 can be, for example, gallium phosphide, gallium arsenide, aluminum gallium arsenide or aluminum gallium phosphide.

[0034] Step S120: defining an electrode region 140 on the surface 120a of the light-emitting epitaxial structure, including a pad electrode region 140a and an extended electrode region 140b, as shown in FIG. Next, a metal mask layer 130 and an electrode material layer 141 are sequentially formed on the electrode region 140, wherein the metal mask layer 130a and the electrode material layer 141a deposited on the pad electrode region 140a substantially coincide with the pad electrode region 130a, and expand. The metal mask layer 130b deposited on the electrode region 140b completely covers the extended electrode region 140b and extends outward. The electrode material layer 141b on the metal mask layer 130b serves as an extension electrode and overlaps the extended electrode region 140b, that is, the metal mask layer 130b. The area is larger than the area of the extension electrode 141b, as shown in Figs. 4 and 5, wherein Fig. 4 is a side cross-sectional view, and Fig. 5 is a plan view. The material of the electrode material layer 140 may be a metal ruthenium alloy, a gold zinc alloy or a chrome gold alloy. The metal mask layer 130 needs to consider the following factors: (1) The spread electrode 141b can be protected as a mask layer in the subsequent roughening process, and the underside of the extended electrode 141b is prevented from being undercut, so that the edge of the metal mask layer 130b is required to extend beyond the extended electrode Preferably, the edge 141 has an excess distance d of at least 2 micrometers, preferably 2 to 5 micrometers. For example, the width dl of the extension electrode 141b is 6 micrometers, and the width of the metal mask layer 130b is 10 micrometers. The distance d between the edge of the film layer 130b and the edge of the extension electrode 141 is 2 μm; (2) the metal mask layer of the non-electrode region is removed after the rough process is completed, so the thickness of the metal mask layer is not too thick, and The material which is relatively easy to remove, for example, Au or the like, may be used, and the thickness may be 10 to 200 nm, preferably 50 to 100 nm. (3) Since the metal mask layer 130 is located between the epitaxial layer 125 and the electrode material layer 141, it is necessary to ensure metal. The mask layer 130 forms an ohmic contact with the epitaxial structure 120, so a material that can form an ohmic contact with the epitaxial material layer is used. In the present embodiment, the metal mask layer 130 is made of Au, which can form a good ohmic contact with the epitaxial layer and is easily removed by a chemical etching solution.

[0035] Step S130: providing a pass-through substrate 200, bonding the Linyi substrate 200 to the light-emitting epitaxial structure 120 by using the bonding layer 210, and then removing the growth substrate 100 on the light-emitting epitaxial structure 120 to expose the surface of the n-type semiconductor layer. . Specifically, the bonding layer 210 may be first coated on the exposed portion of the surface 120a of the luminescent epitaxial structure 120, the exposed portion of the metal mask layer 130, and the electrode material layer 141, and then the lining substrate 200 is pasted on the bonding layer 210. Above, as shown in FIG. 6; in another embodiment, the bonding layer 210 may be first coated on the surface of the lining substrate 200, and then the bonding layer 210 is attached to the surface 120a of the luminescent epitaxial structure 120, metal. Cover The film layer 130 and the electrode material layer 141 complete the bonding of the lining substrate 200 and the luminescent epitaxial structure 120. Next, the growth substrate 100 is removed by, for example, chemical etching or grinding, the etch stop layer 110 is exposed, and the etch stop layer 152 is removed by chemical etching or grinding to expose the n-type ohmic contact layer 121, such as Figure 7 shows. Wherein, the bonding temperature of the bonding substrate 200 is controlled to be between 150 and 500 ° C (preferably below 30 ° C), and the material of the substrate 200 may be glass, silicon, gallium arsenide, etc. The material of layer 210 may be lead-tin alloy, gold-bismuth alloy, gold-bismuth alloy, gold-tin alloy, tin, indium, palladium-indium alloy, benzocyclobutene, epoxy resin, silicon, polyimide or spin-coated glass. A polymer, preferably a benzocyclobutene or an epoxy resin.

[0036] Preferably, a patterned ohmic contact and mirror structure is formed on the exposed surface of the light-emitting epitaxial structure. Specifically, the n-type ohmic contact layer 121 is patterned, and the surface of the n-type confinement layer 122 is exposed, and an n-type ohmic contact metal layer 150 is formed on the n-type ohmic contact layer 121 to improve the electrical quality of the device. The material of the n-type ohmic contact metal layer 150 may be, for example, a ruthenium alloy/gold composite material, a gold/gold iridium alloy/gold composite material or a gold ruthenium alloy/nickel/gold composite material. Next, a transparent material layer 161 is formed on the exposed portion of the surface of the n-type confinement layer 122, the surface of which is flush with the surface of the n-type ohmic contact metal layer 150. Next, a reflective metal layer 162 is formed on the transparent material layer 161 and the n-type ohmic contact metal layer 150, as shown in FIG. Among them, the transparent material layer 161 and the reflective metal layer 162 constitute an omnidirectional reflection structure.

[0037] Step S140: providing a conductive substrate 180, bonding the conductive substrate 200 to the metal reflective structure by using the bonding layer 170. As shown in FIG. 9, the material bonding layer 122 of the bonding layer 170 is preferably a tin-lead alloy or a metal tantalum. Alloy, niobium alloy, gold tin alloy, tin, indium, palladium indium alloy or silicon. The Liner substrate 200 and the bonding layer 210 may then be removed by etching to expose the surface 120a of the light emitting epitaxial structure 120, the metal mask layer 130, and the electrode material layer 141, as shown in FIG.

[0038] Step S150: chemically etching the exposed surface of the window layer 125 to form a roughened surface, as shown in FIG. Specifically, at least 10 g of I2 iodine powder is added to 1600 ml of CH3COOH, and then stirred, and then uniformly heated to 40 to 45 ° C; then, after the solution is kept stable, a mixture of HF, HN03 and C H3COOH is added. The volume ratio of each substance is 3: 2: 4, and the temperature is controlled to 35 to 40 ° C. Next, the above-mentioned light-emitting epitaxial structure is placed in a solvent which is disposed, and roughened for 1 to 2 minutes.

[0039] Step S160: After the roughening is completed, the exposed metal mask layer 130 is removed by etching, as shown in FIG. Preferably, the surface of the light-emitting epitaxial structure and the surface of the extension electrode 141b are covered with an insulating protective layer 190. Next, the pad electrode 142 is formed on the electrode material layer 141a above the pad electrode region 140a, and the fabrication of the light emitting diode is completed, as shown in FIG.

[0040] In this embodiment, the mask layer is first fabricated before the substrate bonding process to reduce the influence of yellow light on the dislocation layer; secondly, the metal is used as a mask layer, and is not etched during the roughening process, The ohmic contact can be considered to solve the problem that the extended electrode is etched, and the risk of the metal contact being weak or falling off is avoided.

14 is a flow chart showing the fabrication of a light emitting diode according to a second preferred embodiment of the present invention, which mainly includes steps S210 to S260. Different from the first preferred embodiment, in the embodiment, the extension electrode 141 is formed in the extended electrode region 141b of the light-emitting epitaxial structure in step S220, and then the metal mask layer 130a is covered on the surface of the extension electrode 141. The details will be described below with reference to Figs. 15-24.

[0042] First, a growth substrate 100 is provided on which a light-emitting epitaxial structure 120 is formed, and then a pad electrode region 140a and an extended electrode region 140b are defined on a surface 120a of the light-emitting epitaxial structure 120, which is referred to the first implementation. Just fine.

[0043] Next, the extension electrode 141 is first formed on the extension electrode region 140b of the light-emitting epitaxial structure surface 120a, and then the metal mask layer 130 is formed on the pad electrode region 140a and the extension electrode 141 of the light-emitting epitaxial structure surface 120a, wherein The metal mask layer 130a deposited on the pad electrode region 140a substantially coincides with the pad electrode region 130a, and the metal mask layer 130b deposited on the extension electrode 141 completely covers the extension electrode 141 and extends outward. The metal mask layer 130b The area is larger than the area of the extension electrode 141b, as shown in Figs. 15 and 16, wherein Fig. 15 is a side cross-sectional view, and Fig. 16 is a plan view. The material of the extension electrode 141 may be gold iridium alloy, gold zinc alloy or chrome gold alloy. The metal mask layer 130 has a thickness of 50 to 100 nm, and the material thereof is selected from Cr. The edge of the metal mask layer 130b on the extension electrode 141 is beyond the edge of the extension electrode 141, and the distance d exceeds at least 2 micrometers. The value is preferably 2 to 5 μm. For example, the width dl of the extension electrode 141b is 6 μm, the width of the metal mask layer 130b is 10 μm, and the distance d of the edge of the metal mask layer 130b beyond the edge of the extension electrode 141 is 2 μm.

[0044] Next, a pass-through substrate 200 is provided, and the pass-through substrate 200 is bonded to the light-emitting epitaxial structure 120 by the bonding layer 210. Then, as shown in FIG. 17, the growth substrate 100 on the light-emitting epitaxial structure 120 is removed, and exposed. The surface of the n-type ohmic contact layer 121 is formed as shown in FIG. Next, a patterned ohmic contact and mirror structure is formed on the exposed surface of the n-type ohmic contact layer 121, as shown in FIG. Next, a conductive substrate 180 is provided, and the conductive substrate 200 is bonded to the metal reflective structure by the bonding layer 170, as shown in FIG. Show. Next, the lining substrate 200 and the bonding layer 210 are removed by etching to expose the surface 120a of the luminescent epitaxial structure 120 and the metal mask layer 130, as shown in FIG. Next, the surface of the exposed window layer 125 is chemically etched to form a roughened surface as shown in FIG. Next, the metal mask layer 130 is removed by etching to expose the surface of the extension electrode 141 and the surface of the window layer of the pad electrode region 140a as shown in FIG. Next, an insulating protective layer 190 is overlaid on the surface of the light-emitting epitaxial structure and the surface of the extension electrode 141, and then a high-resistance current blocking layer 143 and a pad electrode 143 are sequentially formed over the pad electrode region 140a to complete the light-emitting diode. The production, as shown in Figure 24. The pad electrode 142 is connected to the extension electrode 141, and when the current 注 is injected into the pad electrode 142, it flows to the window layer 125 through the extension electrode 141.

[0045] In this embodiment, Cr is used as a mask layer for roughening. First, Cr is not corroded by the rough etching solution, thereby ensuring that the underlying region is not edge-etched; secondly, Cr is an inert metal, and will not Diffusion occurs and does not cause damage to other structures such as the extension electrode; it is also easy to remove by chemical etching.

25 to 28 are partial process diagrams showing a method of fabricating an LED according to a third preferred embodiment of the present invention. As a modification of the second preferred embodiment, the metal mask layer 130 is formed only on the extended electrode region 140b in step S220, as shown in FIGS. 25 and 26; after the step S240 is completed, the epitaxial structure 120 is first performed. A photoresist layer 220 is formed on the pad electrode region 140a of the surface 120a as a mask layer, as shown in FIGS. 27 and 28, and then subjected to a roughening process in step S250; in step S260, a different solution is used to remove the photoresist. The layer 220 and the metal mask layer 130 are used to form pad electrodes in the pad electrode regions.

[0047] Generally, in a large power vertical LED chip, generally the top pad electrode and the pad electrode are designed as a loop, as shown in FIG. 3, so the pad electrode region in the first and second preferred embodiments. And the metal mask layer of the extended electrode region forms a series of closed loops, causing the charged particles in the roughening liquid to perform the movement of cutting the magnetic induction line during the roughening process, so that the charged particles of different electrical properties in the roughening liquid are in their respective The magnetic field is offset in a certain direction, thereby affecting the roughening effect. In order to avoid the foregoing problem, in the embodiment, only the extended electrode and the metal mask layer are formed in the extended electrode region, and the photoresist layer is used as a mask layer in the pad electrode region, thereby avoiding the formation of a closed loop in the pad electrode region and the extended electrode region. Therefore, the charged particles in the roughening liquid are not directionalally moved by the action of the magnetic field, but are randomly and freely moved, thereby increasing the roughening ratio of the outgoing light to increase the LED light extraction rate.

[0048] It is to be understood that the description of the present invention should not be construed as being limited to the above-described embodiments, but rather, including all possible embodiments of the inventive concept.

Claims

The invention provides a method for fabricating a light emitting diode, comprising the steps of: (1) providing an epitaxial structure comprising a growth substrate, a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence; (2) Determining a pad electrode region and an extension electrode region on a surface of the second type semiconductor layer, and sequentially forming a metal mask layer and an extension electrode on the extension electrode region, the area of the metal mask layer completely covering the area Extending the electrode region and extending outward, the area of the metal mask layer > the area of the extension electrode; (3) providing a temporary substrate, bonding the epitaxial structure, and removing the growth substrate, exposed Forming a surface of the first type of semiconductor layer; (4) providing a conductive substrate, bonding the epitaxial structure, removing the lining substrate, exposing a portion of the surface of the second type semiconductor layer, and partially depositing a metal mask layer And an extension electrode; (5) using a chemically etched exposed surface of the second type of semiconductor layer to form a roughened surface; (6) removing the exposed metal mask layer. [Claim 2] A method for fabricating a light emitting diode, comprising the steps of:

(1) providing an epitaxial structure comprising, in order, a growth substrate, a first type semiconductor layer, an active layer, and a second type semiconductor layer;

(2) defining a pad electrode region and an extension electrode region on a surface of the second type semiconductor layer, and sequentially forming an extension electrode and a metal mask layer on the extension electrode region, an area of the metal mask layer Fully covering the extended electrode region and extending outward, the area of the metal mask layer > the area of the extended electrode;

(3) providing a temporary substrate, bonding the epitaxial structure, and removing the growth substrate to expose a surface of the first type semiconductor layer;

(4) providing a conductive substrate, bonding the epitaxial structure, removing the lining substrate, exposing a portion of the surface of the second type semiconductor layer and the metal mask layer;

(5) Forming the surface of the second type semiconductor layer exposed by chemical etching to form a roughening Surface

(6) Remove the metal mask layer.

[Claim 3] The method for fabricating a light emitting diode according to claim 1 or 2, wherein the metal mask layer formed in the step (2) has a thickness of 10 to 200 nm.

[Claim 4] The method for fabricating a light emitting diode according to claim 1 or 2, wherein in the step (2), the edge of the formed metal mask layer is at least 2 micrometers beyond the edge of the extension electrode. .

[Claim 5] The method of fabricating a light emitting diode according to claim 1 or 2, further comprising the step (7): forming a pad electrode in a pad electrode region of the second type semiconductor layer

[Claim 6] The method for fabricating a light emitting diode according to claim 1 or 2, wherein the material of the metal mask layer formed in the step (2) is Au, Cr, Ni, Ti or Pd.

[Claim 7] The method for fabricating a light emitting diode according to claim 1, wherein: in the step (2), a metal mask layer and an electrode material layer are formed in the pad electrode region, A metal mask layer is overlapped with the pad electrode region, and the material of the electrode material layer is the same as the material of the extension electrode.

[Claim 8] The manufacturing method of the light emitting diode according to claim 2, wherein: in the step (2), the electrode region is first extended to form an extension electrode, and then the surface of the second type semiconductor layer in the pad electrode region is formed. A metal mask layer is formed on the upper and the extension electrodes.

[Claim 9] The method for fabricating a light emitting diode according to claim 2, wherein: in the step (2), a metal mask layer is formed only in the extended electrode region, and the pad electrode region does not form a metal mask. In the film layer, in the step (5), a photoresist layer is formed on the pad electrode region, and then etching is performed. The step (6) further includes removing the photoresist mask layer.

[Claim 10] A light emitting diode produced by the method of any one of the preceding claims 1-9.