CN102709426A - Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface - Google Patents
Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface Download PDFInfo
- Publication number
- CN102709426A CN102709426A CN2012101899913A CN201210189991A CN102709426A CN 102709426 A CN102709426 A CN 102709426A CN 2012101899913 A CN2012101899913 A CN 2012101899913A CN 201210189991 A CN201210189991 A CN 201210189991A CN 102709426 A CN102709426 A CN 102709426A
- Authority
- CN
- China
- Prior art keywords
- gan
- epitaxial wafer
- manufacture method
- layer
- surface coarsening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a manufacture method of a GaN (gallium nitride)-based LED (light emitting diode) chip with a roughened surface. The manufacture method comprises the steps that a metal organic chemical vapor deposition method is adopted, a low-temperature GaN buffer layer, an undoped GaN layer, a n-GaN layer, a multi-quantum well layer and a P-GaN layer are sequentially grown on a semiconductor substrate, and a GaN epitaxial wafer is formed; the GaN epitaxial wafer enters PECVD (plasma enhanced chemical vapor deposition) equipment so that sediments are in a nanometer island shape; the epitaxial wafer with the roughened surface is formed by using the nanometer island as an etching mask; one side of the GaN epitaxial wafer is subjected to etching, and a table surface is formed; an ITO (indium tin oxide) film is evaporated on the upper surface of the epitaxial wafer; and a P electrode is manufactured on P-GaN of the GaN epitaxial wafer, an N electrode is manufactured on n-GaN, and the device preparation is completed. The manufacture method has the advantages that the photoetching is not needed, the mask is automatically removed in the etching roughening process, the process is simple, the cost is low, the roughening effect is good, and the light extraction efficiency is high.
Description
Technical field
The present invention relates to the photoelectric device field, be specifically related to a kind of manufacture method with GaN base LED chip of surface coarsening.
Background technology
The luminous efficiency of light-emitting diode (LED) mainly contains two aspect factors: the interior quantum effect of device and outer quantum effect.At present, the internal quantum efficiency of typical GaN blue-ray LED can reach 80%, and therefore, the possibility that further increases substantially internal quantum efficiency is little.And with respect to internal quantum efficiency; The external quantum efficiency of common GaN base LED is merely a few percent; This is because the refractive index of GaN and air differs greatly, and the cirtical angle of total reflection of GaN and air interface is 23 degree, and the light that produces at active area only has sub-fraction to inject in the air.In order to improve the extraction efficiency of light, generally adopt the alligatoring structure to reach at present and improve light taking-up efficient.Simultaneously, after the alligatoring, the luminosity of packaged chip is more concentrated.Contact area between the transparency conducting layer (TCL) of alligatoring structural core plate electrode is bigger, has reduced the operating voltage of device, has improved luminous efficiency.Simultaneously, alligatoring structure also can make reducing greatly unusually of electrode perk in the stripping electrode technology.
The main technical schemes that adopts both at home and abroad at present has: growth distribution bragg reflection layer (DBR) structure, surface coarsening technology and photonic crystal technology etc.Surface coarsening fabrication techniques technology is simple than DBR and photonic crystal, cost is low, is at present by generally good technology.Surface coarsening is divided into two kinds of wet method alligatoring and dry method alligatoring.The wet method alligatoring is to utilize strong acid or alkali corrosion GaN material surface, forms the coarse effect of nature, like patent CN101248537 and CN101409321.But there are shortcomings such as isotropism, easy undercutting and mistake erosion in the wet method alligatoring, and the size and the degree of depth of alligatoring are restricted, and be not obvious for effective extraction effect of light.The dry method alligatoring is to shelter through mask, adopts ICP (inductively coupled plasma) etching GaN material surface to reach the effect of roughening.The dry method alligatoring has advantages such as anisotropic etching, etch rate be fast.Mask how to make nanometer scale is the difficult point of dry method roughening process.Patent CN101702419 adopts spin-coating method to apply the mask of Ni nano particle as dry etching; Patent CN101656284 adopts the mask of ITO (tin indium oxide) particle as dry etching; These methods all exist can't accurately control mask size and inhomogeneity shortcoming; Cause the effect of GaN sheet surface coarsening inconsistent, the raising of light extraction efficiency is inhomogeneous.And the removal of mask need use the strong acid class, and strong acid can make the oxidation of GaN material surface, causes the device forward voltage to raise.
At low temperatures, utilize the film of PECVD (plasma enhanced chemical vapor deposition) method preparation to present extremely coarse pattern, therefore, can be with the film of this film as a kind of alligatoring.Utilize this type of film to combine etching technics, can carry out optionally etching, high efficiency is prepared the LED of alligatoring cheaply.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method with GaN base LED chip of surface coarsening, it is simple that this method has technology, and cost is low, and alligatoring is effective, and light extraction efficiency is high.
Technical scheme of the present invention is: a kind of manufacture method with GaN base LED chip of surface coarsening; Its step: step 1: the method that adopts metal organic chemical vapor deposition; Growing low temperature GaN resilient coating, the GaN layer that undopes, n-GaN layer, multiple quantum well layer and P-GaN layer successively on Semiconductor substrate form the GaN epitaxial wafer; Step 2: the GaN epitaxial wafer is got into PECVD equipment, utilize low temperature depositing method cvd silicon oxide or silicon nitride, Control Parameter, making deposit is the nanometer island; Step 3: utilize the nanometer island as etch mask, epitaxial wafer is carried out etching, form the epitaxial wafer of surface coarsening; Step 4 a: side of GaN epitaxial wafer is being carried out etching, forming table top; Step 5: at upper surface vapor deposition one deck ito thin film of epitaxial wafer; Step 6: on the P-GaN of GaN epitaxial wafer, make the P electrode, on n-GaN, make the N electrode, accomplish the device preparation.Said Semiconductor substrate is sapphire, silicon, carborundum or metal.Wherein PECVD employing silane and laughing gas are as the precursor gases of cvd silicon oxide film.Wherein the diameter of etch mask is 100-20000nm.When being carried out etching, uses the GaN epitaxial wafer dry etching or wet etching.The roughness of the GaN epitaxial wafer of surface coarsening is 5nm-500nm.Wherein the etching depth of table top arrives in the n-GaN layer.The face of the P-GaN of the alligatoring of wherein making can be P-GaN whole on the device, also can be not by the electrode region covered on the P-GaN.The method of the alligatoring GaN that the present invention is corresponding can also be used for the alligatoring of ITO and passivation layer.The method of the alligatoring GaN that the present invention is corresponding can also be used for directly perhaps between chip layer, depositing matsurface at the high hyaline layer of passivation layer deposition roughness, also can be used for alligatoring transparency conducting layer (TCL), to improve the light extraction efficiency of chip.
The invention has the advantages that: this method combines present existing production equipment PECVD, does not need extra increase investment, has the preparation time weak point simultaneously, and process stabilizing is simple, and cost is low, and alligatoring is effective, and light extraction efficiency is high.
Description of drawings
Fig. 1 improves the structural representation of the GaN base LED of light extraction efficiency through the alligatoring of P-GaN laminar surface for the present invention;
Fig. 2 provides a kind of structural representation with GaN base LED chip of alligatoring passivation layer for the present invention.
Among the figure:
1 be substrate, 2 for low temperature GaN, 3 for Doped GaN not, 4 for n-GaN, 5 for multiple quantum well layer, 6 for P-GaN, 7 for ITO, 8 for the p electrode, 9 for n electrode, 10 be passivation layer.
Embodiment
Consult Fig. 1, the present invention provides a kind of manufacture method with GaN base LED chip of surface coarsening, comprises the steps:
Step 1: adopt the method for metal organic chemical vapor deposition (MOCVD), the 20nmAlN that on Semiconductor substrate 1, grows successively, 2nm is Doped GaN not; 1nmGaN; The 20nm current-diffusion layer, (2nmInGaN+12.5nmGaN) * 9MQW, 20nmP-GaN; Form the GaN epitaxial wafer, wherein said Semiconductor substrate 1 is sapphire, silicon, carborundum or metal;
Step 2: the GaN epitaxial wafer is put into PECVD, at the surperficial fast deposition etching of P-GaN layer 6 silica or the silicon nitride with mask, also can be material such as plated metal selectively;
Step 3: will deposit good nano oxidized silicon island as etch mask, the GaN epitaxial wafer is carried out ICP (inductively coupled plasma) etching, and use Cl
2, BCl
3, Ar is as etching gas; Etching finishes the back and with potassium hydroxide or hydrofluoric acid mask is removed totally, simultaneously can also be selectively the face of new etching be carried out annealing in process, and the P-GaN surface roughness is 5nm-500nm; Form the GaN epitaxial wafer of surface coarsening thus; Purpose is in order to increase the emergent light area, to increase the exit probability of light, reducing the generation of total reflection.
Step 4: again the GaN epitaxial wafer is carried out the litho pattern preparation, a side of GaN epitaxial wafer is carried out the ICP etching, remove P-GaN, SQW and the part n-GaN of a side, form the etching depth 700nm-1500nm of this table top of table top;
Step 5: make the method vapor deposition ito thin film of deposited by electron beam evaporation at the upper surface of GaN epitaxial wafer, photoetching corrosion goes out the ITO figure, removes part ito thin film and the ito thin film on the table top on the P-GaN, the formation ito transparent electrode.Ito transparent electrode and P-GaN can form good Ohmic contact, can reduce touch voltage, thereby reduce the operating voltage of device;
Step 6: on p-GaN layer, ITO layer and n-GaN layer, select negative photoresist photoetching P, N electrode for use; Employing electron-beam vapor deposition method evaporation metal CrPtAu (1000
/1000
/10000
), peel off the back and form P electrode and N electrode.
Step 7: on chip, utilize PECVD to cover layer of silicon dioxide, utilize photoetching technique that p, n electrode are exposed then, make things convenient for later stage test and encapsulation.
Step 8: the reducing thin of sapphire substrate of chip to 150um, is drawn and is cleaved into independent chip, carry out electric properties of devices test and optical characteristic test.
See also Fig. 2, the present invention provides a kind of manufacture method with GaN base LED chip of alligatoring passivation layer, comprises the steps:
Step 1: adopt the method for metal organic chemical vapor deposition (MOCVD), the 20nmAlN that on Semiconductor substrate 1, grows successively, 2nm is Doped GaN not; 1nmGaN; The 20nm current-diffusion layer, 12nm*9MQW, 20nmp-GaN; Form the GaN epitaxial wafer, wherein said Semiconductor substrate 1 is sapphire, silicon, carborundum or metal;
Step 2: again the GaN epitaxial wafer is carried out the litho pattern preparation, a side of GaN epitaxial wafer is carried out the ICP etching, remove p-GaN, SQW and the part n-GaN of a side, form the dark 1700nm of etching of this table top of table top;
Step 3: make the method vapor deposition ito thin film of deposited by electron beam evaporation at the upper surface of GaN epitaxial wafer, photoetching corrosion goes out the ITO figure, removes part ito thin film and the ito thin film on the table top on the p-GaN, on P type table top, forms ito transparent electrode.Ito transparent electrode and p-GaN can form good Ohmic contact, can reduce touch voltage, thereby reduce the operating voltage of device;
Step 4: on p-GaN layer, ITO layer and n-GaN layer, select negative photoresist photoetching P, N electrode for use; Employing electron-beam vapor deposition method evaporation metal CrPtAu (1000
/1000
/10000
), peel off the back and form P electrode and N electrode.
Step 5: on chip, utilize PECVD covering layer of silicon dioxide, last what deposit, utilize the corresponding method of the present invention, the aspect of preparation alligatoring utilizes photoetching technique that p, n electrode are exposed then, makes things convenient for the later stage to test and encapsulate.
Step 6: the reducing thin of sapphire substrate of slice, thin piece to 150um, is drawn and is cleaved into independent chip, carry out the optical characteristic test of device and test with electrology characteristic.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within the claim scope of the present invention.
Claims (10)
1. manufacture method with GaN base LED chip of surface coarsening, its step:
Step 1: adopt the method for metal organic chemical vapor deposition, growing low temperature GaN resilient coating, the GaN layer that undopes, n-GaN layer, multiple quantum well layer and P-GaN layer successively on Semiconductor substrate form the GaN epitaxial wafer;
Step 2:GaN epitaxial wafer gets into PECVD equipment, short time low temperature depositing silica or silicon nitride, and Control Parameter, making deposit is the nanometer island;
Step 3: utilize nanometer island deposit as etch mask, epitaxial wafer is carried out etching, form the epitaxial wafer of surface coarsening;
Step 4 a: side of GaN epitaxial wafer is being carried out etching, forming table top;
Step 5: at upper surface vapor deposition one deck ito thin film of epitaxial wafer;
Step 6: on the P-GaN of GaN epitaxial wafer, make the P electrode, on n-GaN, make the N electrode, accomplish the device preparation.
2. according to the said manufacture method with GaN base LED chip of surface coarsening of claim 1, it is characterized in that: said Semiconductor substrate is sapphire, silicon, carborundum or metal.
3. according to the said manufacture method with GaN base LED chip of surface coarsening of claim 1, it is characterized in that: wherein PECVD employing silane and laughing gas are as the precursor gases of cvd silicon oxide film.
4. according to the said manufacture method with GaN base LED chip of surface coarsening of claim 1, it is characterized in that: wherein nanometer island deposit diameter is 100nm-20000nm.
5. according to the said manufacture method of claim 1, it is characterized in that: use dry etching or wet etching when the GaN epitaxial wafer is carried out etching with GaN base LED chip of surface coarsening.
6. according to the said manufacture method with GaN base LED chip of surface coarsening of claim 1, it is characterized in that: the roughness of the GaN epitaxial wafer of surface coarsening is 5nm-500nm.
7. according to the said manufacture method with GaN base LED chip of surface coarsening of claim 1, it is characterized in that: wherein the etching depth of table top arrives in the n-GaN layer.
8. according to the said manufacture method with GaN base LED chip of surface coarsening of claim 1, it is characterized in that: the face of the P-GaN of the alligatoring of wherein making can be P-GaN whole on the device, also can be not by the electrode region covered on the P-GaN.
9. according to the said manufacture method with GaN base LED chip of surface coarsening of claim 1, it is characterized in that: the method for the alligatoring GaN that the present invention is corresponding can also be used for the alligatoring of ITO and passivation layer.
10. according to the said manufacture method of claim 1 with GaN base LED chip of surface coarsening; It is characterized in that: the method for the alligatoring GaN that the present invention is corresponding can also be used for directly perhaps between chip layer, depositing matsurface at the high hyaline layer of passivation layer deposition roughness; Also can be used for the alligatoring transparency conducting layer, to improve the light extraction efficiency of chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101899913A CN102709426A (en) | 2012-06-11 | 2012-06-11 | Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101899913A CN102709426A (en) | 2012-06-11 | 2012-06-11 | Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102709426A true CN102709426A (en) | 2012-10-03 |
Family
ID=46902069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101899913A Pending CN102709426A (en) | 2012-06-11 | 2012-06-11 | Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102709426A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400908A (en) * | 2013-07-25 | 2013-11-20 | 马鞍山圆融光电科技有限公司 | Surface-roughened light-emitting diode and manufacturing method thereof |
| CN103560183A (en) * | 2013-11-08 | 2014-02-05 | 华灿光电(苏州）有限公司 | High-light effect light emitting diode chip and preparing method thereof |
| CN105098015A (en) * | 2014-05-23 | 2015-11-25 | 惠州比亚迪实业有限公司 | Semiconductor layer surface roughening method and formation method for LED structure with roughened surface |
| CN105097441A (en) * | 2014-05-23 | 2015-11-25 | 比亚迪股份有限公司 | Method for roughening surface of semiconductor layer, and method for forming LED structure with roughened surface |
| CN105742441A (en) * | 2016-03-01 | 2016-07-06 | 山东浪潮华光光电子股份有限公司 | GaN-based LED chip with passivating layer roughening structure and production method therefor |
| CN106025027A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | LED chip structure and manufacturing method thereof |
| CN106449922A (en) * | 2016-08-31 | 2017-02-22 | 厦门市三安光电科技有限公司 | Manufacturing method of light emitting diode |
| CN107331736A (en) * | 2016-04-28 | 2017-11-07 | 中国科学院物理研究所 | LED component and its manufacture method having improved properties |
| CN108319066A (en) * | 2018-02-11 | 2018-07-24 | 京东方科技集团股份有限公司 | Color membrane substrates and its manufacturing method, display device |
| CN109037413A (en) * | 2018-06-29 | 2018-12-18 | 华南理工大学 | Metal-doped transparent conductive film UV LED chip and preparation method thereof |
| CN109427940A (en) * | 2017-08-22 | 2019-03-05 | 比亚迪股份有限公司 | LED epitaxial slice and its manufacturing method |
| CN109643744A (en) * | 2016-08-19 | 2019-04-16 | 信越半导体株式会社 | The manufacturing method of luminescence component and luminescence component |
| CN110676354A (en) * | 2018-07-02 | 2020-01-10 | 山东浪潮华光光电子股份有限公司 | Growth method of LED surface roughening chip |
| RU2721166C1 (en) * | 2019-10-14 | 2020-05-18 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Method for production of nitride light-emitting diode |
| CN112820807A (en) * | 2019-11-15 | 2021-05-18 | 山东浪潮华光光电子股份有限公司 | Preparation method of LED chip with roughened surface |
| CN114038968A (en) * | 2021-11-05 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Coarsening method of N-GaN layer, chip and manufacturing method of chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441996A (en) * | 2007-11-21 | 2009-05-27 | 中芯国际集成电路制造(上海)有限公司 | Method for forming and etching hard mask layer |
| US20100159711A1 (en) * | 2008-12-18 | 2010-06-24 | Applied Materials, Inc. | Precursor addition to silicon oxide cvd for improved low temperature gapfill |
| CN102157640A (en) * | 2011-03-17 | 2011-08-17 | 中国科学院半导体研究所 | Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening |
-
2012
- 2012-06-11 CN CN2012101899913A patent/CN102709426A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441996A (en) * | 2007-11-21 | 2009-05-27 | 中芯国际集成电路制造(上海)有限公司 | Method for forming and etching hard mask layer |
| US20100159711A1 (en) * | 2008-12-18 | 2010-06-24 | Applied Materials, Inc. | Precursor addition to silicon oxide cvd for improved low temperature gapfill |
| CN102157640A (en) * | 2011-03-17 | 2011-08-17 | 中国科学院半导体研究所 | Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400908A (en) * | 2013-07-25 | 2013-11-20 | 马鞍山圆融光电科技有限公司 | Surface-roughened light-emitting diode and manufacturing method thereof |
| CN103560183A (en) * | 2013-11-08 | 2014-02-05 | 华灿光电(苏州）有限公司 | High-light effect light emitting diode chip and preparing method thereof |
| CN103560183B (en) * | 2013-11-08 | 2016-08-17 | 华灿光电(苏州）有限公司 | High light effect LED chip and preparation method thereof |
| CN105098015A (en) * | 2014-05-23 | 2015-11-25 | 惠州比亚迪实业有限公司 | Semiconductor layer surface roughening method and formation method for LED structure with roughened surface |
| CN105097441A (en) * | 2014-05-23 | 2015-11-25 | 比亚迪股份有限公司 | Method for roughening surface of semiconductor layer, and method for forming LED structure with roughened surface |
| CN105742441A (en) * | 2016-03-01 | 2016-07-06 | 山东浪潮华光光电子股份有限公司 | GaN-based LED chip with passivating layer roughening structure and production method therefor |
| CN107331736A (en) * | 2016-04-28 | 2017-11-07 | 中国科学院物理研究所 | LED component and its manufacture method having improved properties |
| CN106025027A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | LED chip structure and manufacturing method thereof |
| CN106025027B (en) * | 2016-07-15 | 2018-07-13 | 厦门乾照光电股份有限公司 | A kind of LED chip structure and its manufacturing method |
| CN109643744A (en) * | 2016-08-19 | 2019-04-16 | 信越半导体株式会社 | The manufacturing method of luminescence component and luminescence component |
| CN109643744B (en) * | 2016-08-19 | 2021-07-23 | 信越半导体株式会社 | Light emitting module and method for manufacturing light emitting module |
| CN106449922A (en) * | 2016-08-31 | 2017-02-22 | 厦门市三安光电科技有限公司 | Manufacturing method of light emitting diode |
| CN109427940B (en) * | 2017-08-22 | 2020-04-24 | 比亚迪股份有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN109427940A (en) * | 2017-08-22 | 2019-03-05 | 比亚迪股份有限公司 | LED epitaxial slice and its manufacturing method |
| CN108319066A (en) * | 2018-02-11 | 2018-07-24 | 京东方科技集团股份有限公司 | Color membrane substrates and its manufacturing method, display device |
| US11119258B2 (en) | 2018-02-11 | 2021-09-14 | Boe Technology Group Co., Ltd. | Color filter substrate, method of manufacturing the same and display device |
| CN109037413A (en) * | 2018-06-29 | 2018-12-18 | 华南理工大学 | Metal-doped transparent conductive film UV LED chip and preparation method thereof |
| CN110676354A (en) * | 2018-07-02 | 2020-01-10 | 山东浪潮华光光电子股份有限公司 | Growth method of LED surface roughening chip |
| RU2721166C1 (en) * | 2019-10-14 | 2020-05-18 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Method for production of nitride light-emitting diode |
| CN112820807A (en) * | 2019-11-15 | 2021-05-18 | 山东浪潮华光光电子股份有限公司 | Preparation method of LED chip with roughened surface |
| CN114038968A (en) * | 2021-11-05 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Coarsening method of N-GaN layer, chip and manufacturing method of chip |
| CN114038968B (en) * | 2021-11-05 | 2024-01-12 | 重庆康佳光电技术研究院有限公司 | Coarsening method of N-GaN layer, chip and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102709426A (en) | Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface | |
| CN102157640B (en) | Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening | |
| US8507925B2 (en) | Optoelectronic device and method for manufacturing the same | |
| US8519430B2 (en) | Optoelectronic device and method for manufacturing the same | |
| US8344409B2 (en) | Optoelectronic device and method for manufacturing the same | |
| TW201103164A (en) | Semiconductor optoelectronic structure of increased light extraction efficiency and fabricated thereof | |
| JP2007294972A (en) | Light emitting element and method of manufacturing same | |
| KR20120130840A (en) | Semiconductior light emitting device and Manufacturing method for the same | |
| CN102709422A (en) | Semiconductor light-emitting device and preparation method thereof | |
| US20150084088A1 (en) | Light-Emitting Diode And Manufacturing Method Therefor | |
| Cho et al. | Improved light extraction efficiency in blue light-emitting diodes by SiO2-coated ZnO nanorod arrays | |
| WO2012058961A1 (en) | Light-emitting diode and method for manufacturing same | |
| CN104332532A (en) | Method for manufacturing high-luminous-efficiency light-emitting diode | |
| CN102931308B (en) | Preparation method of light emitting diode with photonic crystals with gradually-changed radius | |
| TW201232824A (en) | Transparent thin film, light emitting device comprising the same, and methods for preparing the same | |
| CN109786515A (en) | A kind of production method of light-emitting diode chip for backlight unit | |
| CN102790153B (en) | Manufacturing method for GaN-based LED (Light Emitting Diode) chip for coarsening p-GaN layer nanometer bowl-shaped surface | |
| KR101548420B1 (en) | Preparation of metal particle layer and light emitting device manufactured by using same | |
| KR101097888B1 (en) | Patterned substrate for gan-based semiconductor light emitting diode and manufacturing method | |
| CN104103727A (en) | LED chip capable of improving quantum efficiency, and preparation method thereof | |
| Huang et al. | GaN-based light-emitting diodes with hybrid micro/nano-textured indium-tin-oxide layer | |
| Lin et al. | Enhanced light extraction mechanism of GaN-based light-emitting diodes using top surface and side-wall nanorod arrays | |
| KR100621918B1 (en) | Light emitting device comprising conductive nanorod as transparent electrode | |
| KR20100044403A (en) | Nitride semiconductor light emitting device and method of manufacturing the same | |
| CN104465907A (en) | Method for improving electrical property of P-type gallium nitride thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121003 |