CN105720150A - Zinc oxide-base transparent electrode structure GaN-base LED chip and manufacturing method thereof - Google Patents
Zinc oxide-base transparent electrode structure GaN-base LED chip and manufacturing method thereof Download PDFInfo
- Publication number
- CN105720150A CN105720150A CN201610015568.XA CN201610015568A CN105720150A CN 105720150 A CN105720150 A CN 105720150A CN 201610015568 A CN201610015568 A CN 201610015568A CN 105720150 A CN105720150 A CN 105720150A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- gan
- transparent electrode
- led chip
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 239000011701 zinc Substances 0.000 title claims abstract description 13
- 229910052725 zinc Inorganic materials 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 5
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 64
- 229910002601 GaN Inorganic materials 0.000 claims description 55
- 239000011787 zinc oxide Substances 0.000 claims description 32
- 230000012010 growth Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 238000000407 epitaxy Methods 0.000 claims description 8
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000009643 growth defect Effects 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- 238000009738 saturating Methods 0.000 claims description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000011161 development Methods 0.000 abstract description 7
- 238000000605 extraction Methods 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 abstract description 2
- 239000007800 oxidant agent Substances 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000004134 energy conservation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 239000010409 thin film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to preparation of a zinc oxide-base transparent conductive film and a GaN-base LED chip, discloses a zinc oxide-base transparent electrode structure GaN-base LED chip and a manufacturing method thereof, and belongs to the technical field of a semiconductor material and a semiconductor photoelectric device. The zinc oxide-base transparent electrode structure GaN-base LED chip comprises a sapphire substrate, a buffer layer, an n-type GaN layer, a multilayer quantum well active luminescent layer, a p-type GaN layer, a heavily-doped contact layer formed on the p-type GaN layer, a zinc oxide-base transparent electrode formed on the heavily-doped contact layer, a p electrode formed on the transparent electrode, and an n electrode formed on the n-type GaN layer. The advantages are as follows: 1, by using cheap water as an oxidizing agent, the deposition temperature for preparing the zinc oxide-base film through MOCVD is reduced, the production cost is decreased, and large-area production and promotion are facilitated; 2, the prepared zinc oxide-base transparent conductive film forms a similar epitaxial contact interface with the p-type GaN layer, the GaN-base LED chip has the advantages of low forward working voltages, high light extraction efficiency and environmental protection and energy conservation, and application of the GaN-base LED chip in the field of illumination and industrial sustainable development are facilitated.
Description
Technical field
The present invention relates to zinc-oxide-base transparent conducting film preparation and GaN base LED chip, belong to semi-conducting material and semiconductor photoelectric device technical field.
Background technology
Gallium nitride light-emitting diode (GaN-LED) is the core devices of solid-state illumination, at present, GaN-LED chip is with high power, high brightness, high integration small-size product for development priority, the light extraction efficiency of chip is required more and more higher by this, but main flow LED chip is limited to the factors such as plane V-type electrode pattern at present, cannot effectively utilize the light of too many reflection, refraction, therefore, use and there is big critical rising angle, high visible light transmissivity, high reliability transparency electrode (TCL) be the LED effective way improving light extraction efficiency.Be widely used at present and industrialization be tin indium oxide (ITO) transparency electrode, there is good electrical conductivity and high visible light transmissivity.But it major downside is that in material containing noble metal In, considerably increasing material cost, and belong to scarce resource, reserves are limited, by the sustainable development of restriction LED industry.Therefore, exploitation transparency electrode technology of future generation is the Strategic Demand of LED industry sustainable development.
Zinc-oxide-base transparent conducting film has the high permeability and high conductivity that can compare favourably with ITO, and especially zinc oxide and GaN semi-conducting material have the Lattice Matching of almost Perfect, the advantages such as it is environmentally friendly that etching does not need strong acid and strong base, nontoxic, aboundresources.In this context, the third generation transparent conductive film being representative with zinc oxide becomes the trend of following transparent conductive film and industrialized development.
At present, the preparation of zinc-oxide-base transparent conducting film adopts sputtering technology (such as Chinese patent CN102034901A, CN103422057A, CN103526169A, CN101692357A) more, compactness and the crystalline quality of thin film are poor, uncontrollable with the contact interface of p-type GaN, Ohmic contact is difficult to be formed, contact resistance is high, not yet applies in LED chip industry.Metal organic chemical vapor deposition (MOCVD) can production owing to having, can epitaxial semiconductor thin film, crystalline quality is high, and growth pattern and interface are controlled, with the advantages such as existing LED process compatible, be the effective means preparing high-quality zinc oxide base transparent conducting film.
At present, mocvd method is prepared zinc-oxide-base transparent conducting film and is applied to thin-film solar cells more, laying particular emphasis on the growth (such as Chinese patent CN102168256A, CN102191487A, CN103413869A) of matte structure ZnO film, doped chemical mostly is B, and resistivity is typically in 1 × 10-3～2 × 10-3Ωcm2Scope, well below the widely used ito transparent electrode material of current LED chip.The mocvd method preparation method of the ZnO-based transparent conductive film of the patent disclosure such as CN10270723A, CN102051593A, CN102251277A LED chip, it adopts high pure oxygen as oxygen source, growth temperature is 500-550 degree.Owing to growth temperature is high, improve the requirement to equipment.Seedling height temperature, the use of high pure oxygen also considerably increases process costs.
In sum, it is contemplated that zinc oxide transparent electrode, in the large-scale application of GaN-LED chip field, is badly in need of developing the low temperature low cost MOCVD technology of preparing of a kind of zinc oxide transparent electrode suitable in GaN-LED chip.
Summary of the invention
The present invention overcomes at least one defect described in above-mentioned prior art, it is provided that a kind of structure GaN-based LED chip of Zinc oxide-based transparent electrode and preparation method thereof, the advantage that the GaN base LED chip of the present invention has low-work voltage, specular removal and low cost.
For solving above-mentioned technical problem, the technical solution used in the present invention is: a kind of structure GaN-based LED chip of Zinc oxide-based transparent electrode, wherein, including Sapphire Substrate, cushion, n-type gallium nitride layer, multi layer quantum well active light-emitting layer, p-type GaN layer, it is formed at the heavily doped contact layer on p-type GaN layer, is formed at the Zinc oxide-based transparent electrode on heavily doped contact layer, is formed at the p-electrode on described transparency electrode, is formed at the n-electrode on n-type GaN layer.
Concrete, described Zinc oxide-based transparent electrode is for adopting the MOCVD method saturating low-resistance transparent conductive film of the epitaxially grown height of low temperature low cost, and it is the zincblende lattce structure polycrystal film of c-axis preferred orientation, and thickness is 100-300nm；And form the class extension contact interface that lattice match is high between p-type GaN layer.
The doped source of described zinc-oxide-base transparent conducting film is at least one in aluminum, gallium or indium, and the atomic ratio of foreign atom and zinc is 1%-10%.
The MOCVD epitaxy growth temperature of described Zinc oxide-based transparent electrode is at 300-450 degree.
The MOCVD epitaxy growth of described Zinc oxide-based transparent electrode adopts cheap deionized water as oxygen source.
The present invention adopts MOCVD technology low-temperature epitaxy zinc-oxide-base transparent conducting film, has high permeability, high conductivity, highly crystalline quality and feature that p-GaN interface is class extension contact interface.
The manufacture method of the structure GaN-based LED chip of a kind of Zinc oxide-based transparent electrode, it is characterised in that comprise the following steps:
The surface of S1.GaN base LED epitaxial wafer carries out soda acid Chemical cleaning, effectively removes surface and can cause the filth of Material growth defect；
S2. with purity be 99.995% diethyl zinc for zinc source, deionized water is oxygen source, and trimethyl aluminium, trimethyl indium, triethyl-gallium at least one are doped source, utilize MOCVD technology, at GaN base LED Epitaxial growth zinc-oxide-base transparent conducting film.
Described heavily doped contact layer is its thickness of n+-InGaN is 2-10nm.
The concrete technical scheme of the low temperature structure GaN-based LED chip of MOCVD epitaxy Zinc oxide-based transparent electrode of the present invention:
1) GaN base LED structure MOCVD epitaxy growth, including Sapphire Substrate, nitride buffer layer, n-type gallium nitride layer, MQW active light-emitting layer, p-type gallium nitride layer, the heavily doped contact layer on p-type gallium nitride layer；
2) described heavily doped contact layer is n+-InGaN or this patent other heavily doped layers NM, and thickness is 2～10nm.
3) above-mentioned GaN base LED epitaxial structure surface carries out soda acid Chemical cleaning, effectively removes surface and can cause the filth of Material growth defect；
4) MOCVD low-temperature epitaxy Zinc oxide-based transparent electrode, is characterised by:
A, epitaxial temperature are 300-450 degree；
B, diethyl zinc are zinc source, and deionized water is oxygen source, and trimethyl aluminium, trimethyl indium, triethyl-gallium at least one are doped source.
C, transparent conductive film thickness be 100-300nm；
The atomic ratio of D, doped chemical and zinc element is 1%-10%.
E, reaction pressure are 6～12Torr, and growth rate is 3-10nm/min.
F, diethyl zinc flow-control 8 × 10-5～4 × 10-4Moles/min, H2The flow-control of O is 7 × 10-4～4 × 10-3Moles/min, the flow-control of doped source is 7 × 10-6～4 × 10-5Moles/min.
5) photoetching process mask, wet etching Zinc oxide-based transparent electrode；
6) ICP dry etching GaN, exposes n-type GaN layer；
7) evaporation p, n metal electrode；
Compared with prior art, provide the benefit that: the present invention 1) use cheap water as oxidant, reduce MOCVD and prepare the depositing temperature of Zinc oxide based film, save production cost, it is simple to large area produces to be promoted；2) zinc oxide transparent conductive film prepared by the present invention, forming class extension contact interface with p-GaN, GaN base LED chip has low forward running voltage, high light extraction efficiency, the advantage of environmental protection and energy saving, promotes the sustainable development of the application at lighting field of the GaN base LED chip and industry.
Accompanying drawing explanation
Fig. 1 is GaN base LED chip structure schematic diagram of the present invention.
Fig. 2 is the XRD diffraction pattern of AZO-TCL thin film in the specific embodiment of the invention.
Fig. 3 is the optical transmittance figure of AZO-TCL thin film in the specific embodiment of the invention.
Fig. 4 is the scanning electron microscope (SEM) photograph of AZO-TCL film surface in the specific embodiment of the invention.
Fig. 5 is the cross section HRTEM photo of AZO-TCL and p-GaN interface in the specific embodiment of the invention.
Fig. 6 is the positive I-V curve comparison diagram of AZO-TCL and ITO-TCLGaN base LED chip in the specific embodiment of the invention.
Fig. 7 is the light output characteristics comparison diagram of AZO-TCL and ITO-TCLGaN base LED chip in the specific embodiment of the invention.
Detailed description of the invention
Accompanying drawing being merely cited for property explanation, it is impossible to be interpreted as the restriction to this patent；In order to the present embodiment is better described, some parts of accompanying drawing have omission, zoom in or out, and do not represent the size of actual product；To those skilled in the art, in accompanying drawing, some known features and explanation thereof are likely to omission and will be understood by.Being merely cited for property of position relationship explanation described in accompanying drawing, it is impossible to be interpreted as the restriction to this patent.
Embodiment one
The purpose of this detailed description of the invention is to provide a kind of low temperature low cost and manufactures the method that aluminium-doped zinc oxide mixes aluminum (AZO), produces a kind of novel AZO-TCL.The AZO-TCL that the method produces, through test, has relatively low resistivity, higher visible light transmissivity, has significantly high lattice match with GaN；During AZO-TCL application GaN-LED prepared by the method, the light extraction efficiency of less forward running voltage and Geng Gao can be obtained.
For obtaining above-mentioned AZO-TCL, the preliminary thinking of the present invention is:
Utilize existing industrial production type MOCVD(Metal-organicChemiealVaporDePosition; MOCVD); with purity be 99.995% diethyl zinc and water for source expect; with trimethyl aluminium for doping metals source; utilize MOCVD technology; purity is the Ar(argon of more than 99.999%) as carrier gas and epitaxial growth protective atmosphere, go out AZO-TCL at backing material Epitaxial growth.
Prepare concretely comprising the following steps of the above AZO-TCL:
1. growth substrates surface treatment
The surface of the GaN base LED as growth substrates material is carried out soda acid Chemical cleaning, effectively removes surface and can cause the filth of Material growth defect；
The epitaxial growth of 2.AZO-TCL
With surface-treated GaN base LED for substrate, with purity be 99.995% diethyl zinc and water for source expect, with trimethyl aluminium for doped source, utilize MOCVD technology, developing zinc oxide mixes aluminum transparent electroconductive film, the technological parameter of MOCVD technology: base substrate temperature is 400 DEG C, reaction pressure is 6～12Torr, and the flow-control of diethyl zinc is 8 × 10-5～4 × 10-4Moles/min, H2The flow-control of O is 7 × 10-4～4 × 10-3Moles/min, the flow-control in trimethyl aluminium source is 7 × 10-6～4 × 10-5Moles/min.
The processing technology of 3.GaN base LED chip
A, photoetching process mask, wet etching zinc oxide exposes required based transparent electrode shape；
B, ICP dry etching GaN, exposes n-type GaN, prepares required chip structure
C, evaporation p, n metal electrode
Fig. 1 is the structure schematic diagram of the GaN-LED epitaxial wafer after growing AZO-TCL in the specific embodiment of the invention, including: in Sapphire Substrate 1, there is nitride buffer layer 2 successively, n-type gallium nitride layer 3, MQW active light-emitting layer 4, p-type gallium nitride layer 5, heavily doped contact layer 6 on p-type gallium nitride layer, Zinc oxide-based transparent electrode 7.
Using Hall55 measuring instrument to record the AZO-TCL sample resistivity grown is 5 × 10-4Ω cm.Fig. 2 is the XRD diffraction pattern of AZO-TCL sample, and AZO-TCL is the polycrystal film of c-axis preferred orientation as shown in Figure 2.Fig. 3 show the transmitance using the AZO-TCL sample that records of UV2550 spectral investigator to visible ray, as seen from the figure, this AZO-TCL sample for the transmitance of the visible ray of 460nm up to 98%.Fig. 4 show the AZO-TCL sample SEM(scanning electron microscope generated) lower surface pattern, by the perfect lattice fringe of the visible interface of Fig. 5 HRTEEM test result, illustrate that AZO and p-GaN defines class epitaxial interface.
Fig. 6, Fig. 7 show the correction data of AZO-TCL, ITO-TCL chip photo test, the GaN-LED epitaxial wafer of same quality specifically use respectively ITO and AZO as TCL layer, it is subsequently processed into the chip crystal grain of 250um × 750um, then electric current is passed to, measure the forward voltage drawing two kinds of chips, optical output power data.The forward voltage that ITO-TCL chip forward voltage is 2.92V, AZO-TCL that can be obtained 20mA by Fig. 6 is 2.87V;Through calculating it can be seen that the AZO-TCL of the application present invention is processed into LED chip, its ratio LED chip being processed into of the ITO-TCL under the same terms, at input current be under 20mA, the light power of 350mA promotes 53.8% and 28.8% respectively.
In sum, the present invention utilizes the AZO-TCL that MOCVD technology obtains, except there is excellent conduction and transparent characteristic, also form class epitaxial interface with GaN-LED epitaxial wafer, thus the AZO-TCL manufactured by application the inventive method, reduce contact resistance and non-radiative recombination, the light extraction efficiency of less forward running voltage and Geng Gao can be obtained, promote that GaN base LED applies and sustainable development in the low temperature low cost of lighting field.
It should be noted that application technical solution of the present invention grows the material of zinc-oxide-base transparent conducting film, including AZO, but it is not limited only to AZO, also includes the binary containing at least one metal-doped source of aluminum, gallium and indium or multicomponent oxide Zr-based materials.
Embodiment two
The present embodiment is the same with the basic step of embodiment one, simply relevant parameter is not quite alike, the relevant parameter of last generated AZO film sample also has some difference, specifically, the epitaxial substrate temperature of AZO-TCL is 350 DEG C, after tested, the transmitance of the AZO-TCL sample 460nm visible ray generated is up to 95%, and resistivity is lower than 1.0 × 10-3Ω·cm.
Embodiment three
The present embodiment is the same with the basic step of embodiment one, simply relevant parameter is not quite alike, the relevant parameter of last generated AZO film sample also has some difference, specifically, the epitaxial substrate temperature of AZO-TCL is 450 DEG C, after tested, the transmitance of the AZO-TCL sample 460nm visible ray generated is up to 96%, and resistivity is lower than 5.5 × 10-4Ω·cm。
Obviously, the above embodiment of the present invention is only for clearly demonstrating example of the present invention, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also cannot all of embodiment be given exhaustive.All any amendment, equivalent replacement and improvement etc. made within the spirit and principles in the present invention, should be included within the protection domain of the claims in the present invention.
Claims (7)
1. the structure GaN-based LED chip of Zinc oxide-based transparent electrode, it is characterized in that, including Sapphire Substrate, cushion, n-type gallium nitride layer, multi layer quantum well active light-emitting layer, p-type GaN layer, it is formed at the heavily doped contact layer on p-type GaN layer, is formed at the Zinc oxide-based transparent electrode on heavily doped contact layer, is formed at the p-electrode on described transparency electrode, is formed at the n-electrode on n-type GaN layer.
2. a kind of structure GaN-based LED chip of Zinc oxide-based transparent electrode according to claim 1, it is characterized in that: described Zinc oxide-based transparent electrode is for adopting the MOCVD method saturating low-resistance transparent conductive film of the epitaxially grown height of low temperature low cost, it is the zincblende lattce structure polycrystal film of c-axis preferred orientation, and thickness is 100-300nm；And form the class extension contact interface that lattice match is high between p-type GaN layer.
3. a kind of structure GaN-based LED chip of Zinc oxide-based transparent electrode according to claim 2, it is characterized in that: the doped source of described zinc-oxide-base transparent conducting film is at least one in aluminum, gallium or indium, the atomic ratio of foreign atom and zinc is 1%-10%.
4. a kind of structure GaN-based LED chip of Zinc oxide-based transparent electrode according to claim 2, it is characterised in that: the MOCVD epitaxy growth temperature of described Zinc oxide-based transparent electrode is at 300-450 degree.
5. a kind of structure GaN-based LED chip of Zinc oxide-based transparent electrode according to claim 4, it is characterised in that: the MOCVD epitaxy growth of described Zinc oxide-based transparent electrode adopts cheap deionized water as oxygen source.
6. the manufacture method according to the arbitrary described structure GaN-based LED chip of a kind of Zinc oxide-based transparent electrode of claim 1 to 5, it is characterised in that comprise the following steps:
The surface of S1.GaN base LED epitaxial wafer carries out soda acid Chemical cleaning, effectively removes surface and can cause the filth of Material growth defect；
S2. with purity be 99.995% diethyl zinc for zinc source, deionized water is oxygen source, and trimethyl aluminium, trimethyl indium, triethyl-gallium at least one are doped source, utilize MOCVD technology, at GaN base LED Epitaxial growth zinc-oxide-base transparent conducting film.
7. the manufacture method of the structure GaN-based LED chip of a kind of Zinc oxide-based transparent electrode according to claim 6, it is characterised in that: described heavily doped contact layer is its thickness of n+-InGaN is 2-10nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610015568.XA CN105720150A (en) | 2016-01-11 | 2016-01-11 | Zinc oxide-base transparent electrode structure GaN-base LED chip and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610015568.XA CN105720150A (en) | 2016-01-11 | 2016-01-11 | Zinc oxide-base transparent electrode structure GaN-base LED chip and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105720150A true CN105720150A (en) | 2016-06-29 |
Family
ID=56147783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610015568.XA Pending CN105720150A (en) | 2016-01-11 | 2016-01-11 | Zinc oxide-base transparent electrode structure GaN-base LED chip and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105720150A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109308952A (en) * | 2018-11-29 | 2019-02-05 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible transparent conductive film of high low-resistance |
| CN111139449A (en) * | 2019-12-31 | 2020-05-12 | 深圳信息职业技术学院 | Zinc oxide based transparent electrode photoelectric detector and preparation method thereof |
| US20200220325A1 (en) * | 2017-08-30 | 2020-07-09 | Osram Oled Gmbh | Optoelectronic semiconductor component |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646767A (en) * | 2012-04-14 | 2012-08-22 | 杭州士兰明芯科技有限公司 | ZnO-based transparent electrode light-emitting diode and preparation method thereof |
| CN103849854A (en) * | 2012-11-28 | 2014-06-11 | 三星康宁精密素材株式会社 | Method of fabricating zinc oxide thin film |
| KR101466842B1 (en) * | 2012-11-28 | 2014-11-28 | 코닝정밀소재 주식회사 | Method of fabricating zinc oxide based thin film for transparent electrode |
-
2016
- 2016-01-11 CN CN201610015568.XA patent/CN105720150A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646767A (en) * | 2012-04-14 | 2012-08-22 | 杭州士兰明芯科技有限公司 | ZnO-based transparent electrode light-emitting diode and preparation method thereof |
| CN103849854A (en) * | 2012-11-28 | 2014-06-11 | 三星康宁精密素材株式会社 | Method of fabricating zinc oxide thin film |
| KR101466842B1 (en) * | 2012-11-28 | 2014-11-28 | 코닝정밀소재 주식회사 | Method of fabricating zinc oxide based thin film for transparent electrode |
Non-Patent Citations (1)
| Title |
|---|
| 谢春燕 ET AL.: "金属有机化学气相沉积法制备Al掺杂ZnO透明导电膜", 《硅酸盐学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200220325A1 (en) * | 2017-08-30 | 2020-07-09 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| US11527865B2 (en) * | 2017-08-30 | 2022-12-13 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| CN109308952A (en) * | 2018-11-29 | 2019-02-05 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible transparent conductive film of high low-resistance |
| CN111139449A (en) * | 2019-12-31 | 2020-05-12 | 深圳信息职业技术学院 | Zinc oxide based transparent electrode photoelectric detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20090058952A (en) | Light emitting device using nano-rod and method for manufacturing the same | |
| US8168455B2 (en) | Method for manufacturing light emitting diode | |
| CN106601882B (en) | Epitaxial wafer of light emitting diode and manufacturing method thereof | |
| CN104505445A (en) | LED (Light Emitting Diode) chip for composite transparent conducting electrode and manufacturing method of LED chip | |
| CN108010996A (en) | A kind of AlGaInP light emitting diodes and preparation method thereof | |
| CN104465898B (en) | Growing method of light-emitting diode epitaxial wafer and light emitting diode epitaxial wafer | |
| CN108183153A (en) | The preparation method of LED chip | |
| US8455756B2 (en) | High efficiency solar cell using IIIB material transition layers | |
| CN104465910A (en) | LED chip structure efficiently matched with ZnO thin film and manufacturing method of LED chip structure | |
| KR101030823B1 (en) | Transparent thin film, light emitting device comprising the same, and methods for preparing the same | |
| CN105720150A (en) | Zinc oxide-base transparent electrode structure GaN-base LED chip and manufacturing method thereof | |
| CN105870289A (en) | AlGaInP-based LED chip with zinc oxide-based transparent electrode structure and manufacturing method of AlGaInP-based LED chip | |
| CN102270723A (en) | Zinc oxide transparent conductive film and preparation method thereof | |
| CN104319320A (en) | LED chip of novel composite transparent electrode and manufacturing method of LED chip | |
| CN101807648B (en) | Introduction-type roughening nitrogen polar surface gallium nitride based light-emitting diode and manufacturing method thereof | |
| KR101201641B1 (en) | Transparent thin film, light emitting device comprising the same, and methods for preparing the same | |
| KR20130093375A (en) | Method for manufacturing light emitting diode | |
| CN103098240B (en) | There is light-emitting device and the manufacture method thereof of MgO pyramidal structure | |
| CN204118109U (en) | A kind of LED chip of NEW TYPE OF COMPOSITE transparency electrode | |
| CN106784183A (en) | LED chip and manufacturing method thereof | |
| CN105957933A (en) | LED epitaxial structure matched with AZO thin film current expansion layer and growth method therefor | |
| CN100424892C (en) | Heterojunction pn diode based on silicon nanoline and producing method thereof | |
| CN102769085A (en) | Semiconductor structure with low contact resistance and method for manufacturing semiconductor structure | |
| CN110718615B (en) | AlGaInP-based red LED with composite window layer structure and preparation method thereof | |
| TWI517440B (en) | Semiconductor structure with low contact resistance and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160629 |