CN102623590A - Method for producing nanometer gallium nitride light-emitting diode (LED) - Google Patents
Method for producing nanometer gallium nitride light-emitting diode (LED) Download PDFInfo
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- CN102623590A CN102623590A CN2012101017636A CN201210101763A CN102623590A CN 102623590 A CN102623590 A CN 102623590A CN 2012101017636 A CN2012101017636 A CN 2012101017636A CN 201210101763 A CN201210101763 A CN 201210101763A CN 102623590 A CN102623590 A CN 102623590A
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Abstract
A method for producing a nanometer gallium nitride LED comprises that a substrate is obtained; a GaN buffer layer, a n-GaN layer, a quantum well layer and a p-GaN layer are sequentially epitaxially grown on the substrate to form a chip; an intermediate layer is grown on the p-GaN layer of the chip; a nano pattern layer is grown on the intermediate layer; the nano pattern layer serves as a mask, and an inductively-coupled-plasma-reactive-ion-etching (ICP-RIE) method is used for etching the intermediate layer; the etched intermediate layer serves as a mask, an ICP-RIE method is used for etching the p-GaN layer, the quantum well layer and part of the n-GaN layer on the chip, and a nano graphical structure is formed; the nano pattern layer and the intermediate layer are removed to form a graphical chip; even spin-coating of an insulating layer is conducted on the graphical chip, and the insulating layer on the surface is removed; a portion at one side of the graphical chip is etched into the n-GaN layer to form a mesa; a p-GaN electrode is produced on the graphical chip; and a n-GaN electrode is produced on the mesa so as to complete production of the LED.
Description
Technical field
The invention belongs to technical field of semiconductor illumination, be meant especially to be used for the manufacture method of big a kind of nano silicon nitride gallium light-emitting diode.
Background technology
Gallium nitride material is a third generation semi-conducting material; Energy gap is 3.4ev; Because its stable in properties is again the direct band gap luminescent material that wavelength is positioned at royal purple light, therefore be to make royal purple light-emitting diode (LED); The transistorized material of high mobility, national semiconductor lighting is classified gallium nitride material as center.But gallium nitride light-emitting diode is faced with problems at present; The data that experiment obtains show that the internal quantum efficiency of GaN blue light-emitting diode is to 95%; But the achievement in research of the extraction efficiency aspect of GaN is not very outstanding at present, and the highest records 73%, but this structural thickness has only 700nm; All existing bigger problem aspect structure realization and the electric current injection, also have suitable distance to walk apart from industrialization.So further improve the extraction efficiency of GaN light-emitting diode is to improve GaN light-emitting diodes optical efficiency and reduce the LED use cost, is applied to normal lighting early, realizes the energy-saving and emission-reduction of country, a ring of environmental protection most critical.Because the refractive index of GaN material is 2.4, when light incides GaN and air interface, have only 26% luminous energy to go out from boundary reflection, remaining light all becomes the guided mode lateral transport.So lower the guided mode quantity of gallium nitride light-emitting diode, outgoing is the important method that improves the gallium nitride extraction efficiency from the interface to let more light.
It is not to be difficult to accomplish small size (below the 100nm) on the size that conventional method is made nano graph, is exactly to be difficult to large-area manufacturing nano graph (electron beam exposure, holographic lithography).
Summary of the invention
The objective of the invention is to, a kind of manufacture method of nano silicon nitride gallium light-emitting diode is provided.What this method adopted is the gallium nitride light-emitting diode that autonomous packing technique is made nanostructure, because physical dimension is from the macro-size to the nano-scale, the quantity of guided mode sharply descends, so light extraction efficiency will significantly increase.This method not only can the large-area manufacturing nano graph, can also accomplish the size of nano graph below the 100nm.
The present invention provides a kind of manufacture method of nano silicon nitride gallium light-emitting diode, may further comprise the steps:
Step 1: get a substrate;
Step 2: epitaxial growth GaN resilient coating, n-GaN layer, quantum well layer and p-GaN layer successively on substrate form substrate;
Step 3: the intermediate layer of on the p-GaN of substrate layer, growing;
Step 4: growing nano graph layer in the intermediate layer;
Step 5: make mask with the nano graph layer, adopt the method for ICP-RIE, the etching intermediate layer;
Step 6: mask is made in the intermediate layer with after the etching, adopts the method for ICP-RIE, the on-chip p-GaN layer of etching, quantum well layer and part n-GaN layer, the structure of formation nano patterning; And remove nano graph layer and intermediate layer, form patterned substrate;
Step 7:, and remove the insulating barrier on surface at insulating barrier in the spin coating equably on the patterned substrate;
Step 8: the partial etching of patterned substrate one side is fallen, and etching depth arrives in the n-GaN layer, forms table top;
Step 9: on patterned substrate, make the p-GaN electrode;
Step 10: manufacturing n on table top-GaN electrode, accomplish the making of light-emitting diode.
Description of drawings
For making the auditor can further understand structure of the present invention, characteristic and purpose thereof, below in conjunction with the detailed description of accompanying drawing and preferred embodiment as after, wherein:
Fig. 1-Fig. 7 is the flow chart of manufacture method of the present invention.
Embodiment
See also shown in Figure 1ly, the present invention provides a kind of manufacture method of nano silicon nitride gallium light-emitting diode, may further comprise the steps:
Step 1: get a substrate 10 (consulting Fig. 1), the material of said substrate 10 is silicon, sapphire or gallium nitride, and its surface is plane or micrographics PSS, perhaps nano graph.
Step 2: epitaxial growth GaN resilient coating 11, n-GaN layer 12, quantum well layer 13 and p-GaN layer 14 successively on substrate 10; Form substrate 15 (consulting Fig. 1); Wherein the material of SQW 13 is the indium gallium nitrogen/gallium nitrogen of alternating growth, and periodicity is 3-10, and its light that sends is blue light or green glow.
Step 3: growth intermediate layer 16 (consulting Fig. 2) on the p-GaN of substrate 15 layer 14, wherein the material in intermediate layer 16 is SiO
2Or Si
3N
4, grow through the PECVD method.
Step 4: the 16 growing nano graph layers 17 (consulting Fig. 3) in the intermediate layer, wherein the material of nano graph layer 17 is Ni, Cr, Ag or Au, is to tilt to grow through electron beam evaporation plating to accomplish.Inclination growing metal film can self assembly form metal nanoparticle.Nano-scale can pass through the thickness of growth temperature, metallic film, and the angle of inclination is regulated.Technology of the present invention can realize that size can be from the making of the nano graph of 20-200nm, can solve well owing to extension sink to the bottom and epitaxial material between the stress that causes of bigger lattice mismatch.Because small size nano graph effect, it can better discharge stress and compare with the micron graph substrate.Consider from the light extraction angle that simultaneously small size (20-200nm) nano graph can be realized the light-emitting diode of high extracting efficiency owing to can significantly reduce the repeatedly reflection of light in the gallium nitride light-emitting diode.
Step 5: make mask with nano graph layer 17, adopt the method for ICP-RIE, etching intermediate layer 16 (consulting Fig. 4), wherein adopting the etching gas in the method etching intermediate layer 16 of ICP-RIE is CF
4The time of etching, the power of gas flow and ICP is the main factor that influences nano silicon nitride gallium graphical quality.Selecting suitable condition is the key point that realizes that nano silicon nitride gallium light-emitting diode is made.
Step 6: make mask with the intermediate layer after the etching 16, adopt the method for ICP-RIE, the p-GaN layer 14 on the etching substrate 15, quantum well layer 13 and part n-GaN layer 12, the structure (consulting Fig. 5) of formation nano patterning; And remove nano graph layer 17 and intermediate layer 16, form patterned substrate; Etching gas is Cl
2/ BCl
3/ Ar
2The time of etching, the power of gas flow and ICP is the main factor that influences nano silicon nitride gallium graphical quality.Selecting suitable condition is the key point that realizes that nano silicon nitride gallium light-emitting diode is made.
Step 7: at insulating barrier 18 in the spin coating equably on the patterned substrate, and remove the insulating barrier 18 (consulting Fig. 6) on surface, wherein insulating barrier 18 is SOG insulating cement or polymer insulation glue, and the purpose of insulating cement is in order to isolate P, N electrode.
Step 8: the partial etching of patterned substrate one side is fallen, and etching depth arrives in the n-GaN layer 12, forms table top 121 (consulting Fig. 7).
Step 9: on patterned substrate, make p-GaN electrode 19 (consulting Fig. 7), wherein electrode 19 is transparent conductive film ITO and cr/Pt/Au.
Step 10: manufacturing n on table top 121-GaN electrode 20 (consulting Fig. 7), wherein electrode 20 is Cr/Pt/Au, accomplishes the making of light-emitting diode.
Embodiment
See also shown in Fig. 1-7, the nano silicon nitride gallium light-emitting diode that the present invention provides the present invention that a kind of high extracting efficiency is provided may further comprise the steps:
Step 1: get a substrate 10, substrate is a sapphire, and the thickness of substrate is 400um.
Step 2: epitaxial growth GaN resilient coating 11 on substrate 10, n-GaN layer 12, SQW 13, p-GaN layer 14 forms substrate 15, and the thickness of resilient coating 11 is 2um, and the thickness of n-GaN layer 12 is 4um, and the InGaN SQW is 5 groups of InGaN/GaN, the In component is 0.15.
Step 3: growth intermediate layer 16 on p-GaN layer 14, the intermediate layer is SiO
2, thickness is 200nm.
Step 4: the 16 growing nano graph layers 17 in the intermediate layer, nano graph layer 17 is a Metal Cr, is of a size of 10nm.
Step 5:ICP-RIE etching intermediate layer 16, the gas of ICP etching are CF
4, power is 300W.
Step 6:ICP-RIE etching substrate 15 forms the structure of nano patterning, and removes nano graph layer 17 and intermediate layer 16, and the gas of ICP etching substrate 15 is Cl
2/ BCl
3/ Ar
2
Step 7: at insulating barrier 18 in the spin coating equably on the patterned substrate, and remove the insulating barrier on surface, the thickness of insulating cement is 200nm, and removes the insulating barrier of surface portion.
Step 8: manufacturing n-GaN and p-GaN electrode on the nanometer substrate respectively, the metal of n-GaN electrode is Cr/Pt/Au, and thickness is respectively 5/20/1000nm, and the p-GaN electrode metal is ITO/Ni/Au, and thickness is respectively 280/5/1000nm.
The above; Be merely the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with this technological people in the technical scope that the present invention disclosed; The conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (9)
1. the manufacture method of a nano silicon nitride gallium light-emitting diode may further comprise the steps:
Step 1: get a substrate;
Step 2: epitaxial growth GaN resilient coating, n-GaN layer, quantum well layer and p-GaN layer successively on substrate form substrate;
Step 3: the intermediate layer of on the p-GaN of substrate layer, growing;
Step 4: growing nano graph layer in the intermediate layer;
Step 5: make mask with the nano graph layer, adopt the method for ICP-RIE, the etching intermediate layer;
Step 6: mask is made in the intermediate layer with after the etching, adopts the method for ICP-RIE, the on-chip p-GaN layer of etching, quantum well layer and part n-GaN layer, the structure of formation nano patterning; And remove nano graph layer and intermediate layer, form patterned substrate;
Step 7:, and remove the insulating barrier on surface at insulating barrier in the spin coating equably on the patterned substrate;
Step 8: the partial etching of patterned substrate one side is fallen, and etching depth arrives in the n-GaN layer, forms table top;
Step 9: on patterned substrate, make the p-GaN electrode;
Step 10: manufacturing n on table top-GaN electrode, accomplish the making of light-emitting diode.
2. the manufacture method of nano silicon nitride gallium light-emitting diode as claimed in claim 1, wherein the material of substrate is silicon, sapphire or gallium nitride, its surface is plane or micrographics PSS, perhaps nano graph.
3. the manufacture method of nano silicon nitride gallium light-emitting diode as claimed in claim 1, wherein the material of SQW is the indium gallium nitrogen/gallium nitrogen of alternating growth, and periodicity is 3-10, and its light that sends is blue light or green glow.
4. the manufacture method of nano silicon nitride gallium light-emitting diode as claimed in claim 1, wherein the material in intermediate layer is SiO
2Or Si
3N
4, grow through the PECVD method.
5. the manufacture method of nano silicon nitride gallium light-emitting diode as claimed in claim 1, wherein the material of nano graph layer is Ni, Cr, Ag or Au, is to tilt to grow through electron beam evaporation plating to accomplish.
6. the manufacture method of nano silicon nitride gallium light-emitting diode as claimed in claim 1, wherein adopting the etching gas in the method etching intermediate layer of ICP-RIE is CF4.
7. the manufacture method of nano silicon nitride gallium light-emitting diode as claimed in claim 1, wherein adopting the etching gas of the on-chip p-GaN layer of method etching, quantum well layer and the part n-GaN layer of ICP-RIE is Cl
2/ BCl
3/ Ar
2
8. the manufacture method of nano silicon nitride gallium light-emitting diode as claimed in claim 1, wherein insulating barrier is SOG insulating cement or polymer insulation glue.
9. the manufacture method of nano silicon nitride gallium light-emitting diode as claimed in claim 1, wherein the nano graph layer is of a size of 30-200nm.
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Cited By (9)
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| CN103022299A (en) * | 2012-12-27 | 2013-04-03 | 中国科学院半导体研究所 | Method for preparing micro-nanorod light-emitting diode |
| CN103022300A (en) * | 2012-12-27 | 2013-04-03 | 中国科学院半导体研究所 | Method for producing micro-nanorod light-emitting diode |
| CN103794714A (en) * | 2014-01-30 | 2014-05-14 | 中国科学院半导体研究所 | Manufacturing method of stress sensor based on nanorod diode piezoelectric effect |
| CN104465900A (en) * | 2014-12-03 | 2015-03-25 | 山东浪潮华光光电子股份有限公司 | Structured arrangement manometer coarsened sapphire substrate and preparation method |
| CN104637790A (en) * | 2015-03-17 | 2015-05-20 | 山东元旭光电有限公司 | Large-area manufacturing method for nano graph |
| CN104868023A (en) * | 2015-05-11 | 2015-08-26 | 南京大学 | III-nitride semiconductor/quantum dot hybrid white light LED device and preparing method thereof |
| CN108281518A (en) * | 2018-01-30 | 2018-07-13 | 深圳市华星光电技术有限公司 | A kind of flexible LED device and preparation method thereof |
| CN109860362A (en) * | 2018-12-05 | 2019-06-07 | 湖北深紫科技有限公司 | A kind of deep ultraviolet LED epitaxial wafer with Nanostructure Network, device and preparation method thereof |
| CN114899090A (en) * | 2022-07-14 | 2022-08-12 | 江西兆驰半导体有限公司 | Epitaxial wafer preparation method, epitaxial wafer and LED chip |
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| CN103022299A (en) * | 2012-12-27 | 2013-04-03 | 中国科学院半导体研究所 | Method for preparing micro-nanorod light-emitting diode |
| CN103022300A (en) * | 2012-12-27 | 2013-04-03 | 中国科学院半导体研究所 | Method for producing micro-nanorod light-emitting diode |
| CN103794714A (en) * | 2014-01-30 | 2014-05-14 | 中国科学院半导体研究所 | Manufacturing method of stress sensor based on nanorod diode piezoelectric effect |
| CN104465900A (en) * | 2014-12-03 | 2015-03-25 | 山东浪潮华光光电子股份有限公司 | Structured arrangement manometer coarsened sapphire substrate and preparation method |
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| CN104868023A (en) * | 2015-05-11 | 2015-08-26 | 南京大学 | III-nitride semiconductor/quantum dot hybrid white light LED device and preparing method thereof |
| CN108281518A (en) * | 2018-01-30 | 2018-07-13 | 深圳市华星光电技术有限公司 | A kind of flexible LED device and preparation method thereof |
| WO2019148581A1 (en) * | 2018-01-30 | 2019-08-08 | 深圳市华星光电技术有限公司 | Flexible led device and manufacturing method thereof |
| CN108281518B (en) * | 2018-01-30 | 2019-11-15 | 深圳市华星光电技术有限公司 | A kind of flexible LED device and preparation method thereof |
| CN109860362A (en) * | 2018-12-05 | 2019-06-07 | 湖北深紫科技有限公司 | A kind of deep ultraviolet LED epitaxial wafer with Nanostructure Network, device and preparation method thereof |
| CN114899090A (en) * | 2022-07-14 | 2022-08-12 | 江西兆驰半导体有限公司 | Epitaxial wafer preparation method, epitaxial wafer and LED chip |
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Application publication date: 20120801 |