CN109037267B - Metal photonic crystal coupling enhanced nano-LED array and manufacturing method thereof - Google Patents
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses a metal photonic crystal coupling enhanced nano-LED array and a manufacturing method thereof, comprising the following steps from bottom to top: the LED comprises a Si substrate, a Ni/Au metal array, a p-electrode connecting wire, a nano-LED array, an n-type GaN layer and a Ti/Au metal layer; the nano-LED array structure comprises from bottom to top: the LED comprises an Ni/Au metal layer, an Ag metal layer, a p-type GaN layer, a quantum well layer and an n-type GaN layer on the quantum well layer; each nano-LED monomer is provided with a separate p contact, and all the nano-LED monomers share one n contact; the Ag metal layer forms Ag metal photonic crystals in the array, the light emitting efficiency is enhanced by utilizing the properties of photon forbidden bands and metal surface plasmons, and the surface plasmons are generated by the Ag metal layer; the middle part is of an inverted structure, and the absorption of the bottom substrate is reduced by utilizing the reflector effect of the Ag metal photonic crystal. The patent greatly improves the luminous efficiency.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a metal photonic crystal coupling enhanced nano-LED array and a manufacturing method thereof.
Background
An LED, an abbreviation of Light Emitting Diode, is known as a Light Emitting Diode. Like ordinary diodes, LEDs have PN junctions. When forward voltage is applied to two ends of an LED with an InGaN/GaN quantum well structure, holes which move to an N region from a P region and electrons which move to the P region from the N region are injected, and meet and are recombined to emit light at the quantum well structure. Illumination products based on GaN-based LEDs have gradually replaced incandescent lamps and fluorescent lamps, becoming a new generation of illumination sources. The LED has the characteristics of energy conservation, environmental protection, long service life, high luminous efficiency and the like. Typical dimensions of LED chips are in the millimeter range, and by further scaling down LED chips, hundreds or thousands of nano-LED arrays are fabricated in the nanometer range. Through the reduction of the size, the nano-LED has the characteristics of light emitting localization, higher saturation current density and higher output light power density, so that the light emitting efficiency of the LED is further improved.
A metal photonic crystal is a medium in which a dielectric material periodically arranged in the photonic crystal is changed into a metal. The metal photonic crystal not only has the properties of a photonic forbidden band and an optical reflector of a common photonic crystal, but also has the characteristic of metal surface plasmon, so that a novel structure of the metal photonic crystal coupling enhanced nano-level LED is designed and developed, and the light extraction efficiency can be further improved.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: providing a metal photonic crystal coupling enhanced nano-LED array and a manufacturing method thereof; the invention combines the metal photonic crystal, and utilizes the characteristics of metal surface plasmon, optical reflector and photon forbidden band to improve the luminous efficiency of the gallium nitride-based LED device; the luminous efficiency is further improved by utilizing the high luminous power of the nano-scale LED.
The technical scheme adopted by the invention for solving the technical problems in the prior art is as follows:
a metal photonic crystal coupling enhanced nano-LED array, comprising: the LED comprises a Si substrate, a Ni/Au metal array and a p-electrode connecting wire which are positioned on the Si substrate, a nano-LED array positioned on the Ni/Au metal array, an n-type GaN layer positioned on the nano-LED array, and a Ti/Au metal layer positioned on the n-type GaN layer; wherein the nano-LED array comprises from bottom to top: the GaN-based LED comprises a Ni/Au metal layer, an Ag metal layer positioned on the Ni/Au metal layer, a p-type GaN layer positioned on the Ag metal layer, an InGaN/GaN quantum well layer positioned on the p-type GaN layer, and an n-type GaN layer positioned on the InGaN/GaN quantum well layer; the Ni/Au metal array comprises a lower Ni metal array and an upper Au metal array; the Ti/Au metal layer comprises a lower Ti metal array and an upper Au metal array; each nano-LED monomer is provided with a separate p contact, and all the nano-LED monomers share one n contact; the Ag metal layer forms Ag metal photonic crystals in the array, the luminous efficiency is enhanced by utilizing the properties of photon forbidden bands and metal surface plasmons, the diameter of the Ag metal array is 140nm, the period is 800nm, and the surface plasmons are generated by the Ag metal layer; the middle part is of an inverted structure, and the absorption of the bottom substrate is reduced by utilizing the reflector effect of the Ag metal photonic crystal; the nano-LED array and the Ag metal photonic crystal have the same period and the same diameter; the nano-LED array and the Ni/Au metal array on the Si substrate are consistent in period and same in diameter.
A manufacturing method of a metal photonic crystal coupling enhanced nano-LED array comprises the following steps:
101, growing a Ni metal layer and an Au metal layer on a Si substrate in sequence by utilizing a metal organic compound chemical vapor deposition technology, and forming a Ni/Au array and a p electrode connecting wire by utilizing a plasma etching technology;
step 102, sequentially growing an n-type GaN layer, a quantum well layer, a p-type GaN layer, an Ag metal layer, a Ni metal layer and an Au metal layer on a sapphire substrate by utilizing a metal organic compound chemical vapor deposition technology; the quantum well layer is of an InGaN and GaN alternating structure;
103, etching the Au metal layer to 1/3 positions of the thickness of the n-type GaN layer through a plasma etching method to form a nano-LED array;
104, bonding the nano-LED array and the Ni/Au metal array on the Si substrate in a one-to-one mode by utilizing a flip chip technology and a metal bonding technology;
and 105, stripping the sapphire substrate positioned at the uppermost position, and sequentially growing a Ti metal layer and an Au metal layer on the n-type GaN layer by utilizing a metal organic compound chemical vapor deposition technology to form an n electrode.
Further: in step 103, the specific steps of preparing the nano-LED array containing the metal photonic crystal are as follows:
step 1031, spin-coating photoresist on the upper surface of the Au metal layer;
step 1032, using the photoresist as a mask plate, and introducing etching gas, wherein the volume ratio of the etching gas is as follows: BCl3:Cl2Ar is 6:3:20, and the etching time is 220 seconds;
1033, etching the array with the period of 800nm and the diameter of 140nm by using a plasma etching method;
and 1034, removing the photoresist.
Further: the step 101 is specifically as follows:
step 1011, growing an 8nm Ni layer on the Si substrate by utilizing a metal organic compound chemical vapor deposition technology;
step 1012, growing an Au layer of 2nm on the Ni metal layer by utilizing a metal organic compound chemical vapor deposition technology;
1013, spin-coating photoresist on the Au layer;
step 1014, manufacturing a mask by using the photoresist, and introducing etching gas, wherein the volume ratio of the etching gas is as follows: BCl3:Cl2Ar is 6:3:20, and the etching time is 10 seconds;
and step 1015, etching the Ni/Au array with the period of 800nm and the diameter of 140nm and the p-electrode connecting wire with the width of 70nm by using a plasma etching technology.
The invention has the advantages and positive effects that:
(1) preparing a metal photonic crystal, and enhancing the internal quantum efficiency of the LED by utilizing metal surface plasmon coupling;
(2) the property of an optical reflector of the metal photonic crystal is utilized to enable light emitted downwards to be greatly reflected, so that the absorption of the substrate to the light is reduced;
(3) the photonic band gap property of the metal photonic crystal is utilized to destroy the optical waveguide mode in the LED and increase the light extraction efficiency;
(4) the LED with the inverted structure has better stability against large current impact and light output performance.
(5) The nano-LED array is addressable, each nano-LED has a separate p-contact, and all the nano-LEDs share one n-contact.
(6) The nano-scale LED has higher saturation current density and higher output light power density, thereby further improving the luminous efficiency.
Drawings
FIG. 1 is an overall block diagram of a preferred embodiment of the present invention;
FIG. 2 is a top view of a substrate in a preferred embodiment of the invention;
fig. 3 is a graph comparing the effects of the preferred embodiment of the present invention and the conventional art.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings:
referring to fig. 1 to 2, a metal photonic crystal coupling enhanced nano-LED array has a structure divided into an upper portion, a middle portion and a lower portion, wherein the lower portion is a p-type metal contact region, including: the device comprises a Si substrate, a Ni/Au metal array and a p-electrode connecting wire, wherein the Ni/Au metal array and the p-electrode connecting wire are positioned on the Si substrate; the middle part is a nano-LED array with an inverted structure, and each unit in the array comprises from bottom to top: the GaN-based LED comprises a Ni/Au metal layer, an Ag metal layer positioned on the Ni/Au metal layer, a p-type GaN layer positioned on the Ag metal layer, an InGaN/GaN quantum well layer positioned on the p-type GaN layer, and an n-type GaN layer positioned on the InGaN/GaN quantum well layer; the upper part is an n-type metal contact area and comprises from bottom to top: an n-type GaN layer, and a Ti/Au metal layer.
A manufacturing method of a metal photonic crystal coupling enhanced nano-LED array comprises the following steps: the method comprises the following steps:
101, growing a Ni metal layer and an Au metal layer on a Si substrate in sequence by utilizing a Metal Organic Chemical Vapor Deposition (MOCVD) technology, and forming a Ni/Au array and a p electrode connecting wire by utilizing a plasma (ICP) etching technology;
step 102, sequentially growing an n-type GaN layer, an InGaN/GaN quantum well layer, a p-type GaN layer, an Ag metal layer, a Ni metal layer and an Au metal layer on a sapphire substrate by utilizing an MOCVD (metal organic chemical vapor deposition) technology;
103, etching the Au metal layer to 1/3 positions on the thickness of the n-type GaN layer by an ICP etching method to form a nano-LED array;
104, bonding the nano-LED array and the Ni/Au array on the Si substrate in a one-to-one mode by utilizing a flip chip technology and a metal bonding technology;
105, stripping the sapphire substrate positioned at the uppermost position, and sequentially growing a Ti metal layer and an Au metal layer on the n-type GaN layer by utilizing the MOCVD technology to form an n electrode;
wherein: in step 103, the specific steps of preparing the nano-LED array containing the metal photonic crystal are as follows:
step 1031, spin-coating photoresist on the upper surface of the Au metal layer;
step 1032, using the photoresist as a mask plate, and introducing etching gas, wherein the volume ratio of the etching gas is as follows: BCl3:Cl2Ar is 6:3:20, and the etching time is 220 seconds;
1033, etching the array with the period of 800nm and the diameter of 140nm by using an ICP etching method;
1034, removing the photoresist;
in the step 101, the specific process of preparing the Si substrate structure with the Ni/Au array by using the MOCVD technique is as follows:
step 1011, growing an 8nm Ni layer on the Si substrate by using the MOCVD technology;
step 1012, growing an Au layer of 2nm on the Ni metal layer by using an MOCVD (metal organic chemical vapor deposition) technology;
1013, spin-coating photoresist on the Au layer;
step 1014, manufacturing a mask by using the photoresist, and introducing etching gas, wherein the volume ratio of the etching gas is as follows: BCl3:Cl2Ar is 6:3:20, and the etching time is 10 seconds;
and step 1015, etching the Ni/Au array with the period of 800nm and the diameter of 140nm and the p electrode connecting wire with the width of 70nm by an ICP etching technology.
Referring to FIG. 3, the dotted line shows the nano-LED array without Ag photonic crystals, and the solid line shows the nano-LED array covered with Ag photonic crystals with a period of 800nm and a diameter of 140 nm. The abscissa is the incident light angle of the light source (light source position: quantum well layer in nano-LED array simulation model), and the ordinate is the luminous efficiency.
As can be seen from the figure, when the incident angle is scanned from 0 ° to 90 °, and the incident angle is greater than 27 °, substantially no light is extracted from the GaN-LED model not covered with the Ag photonic crystal due to the total reflection inside the nano-LED. For a nano-LED covered with Ag photonic crystals with the period of 800nm and the diameter of 140nm, when the incident angle is larger than 27 degrees, light is effectively extracted, and the luminous efficiency is greatly improved by 40.5 percent.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (3)
1. A manufacturing method of a metal photonic crystal coupling enhanced nano-LED array is characterized by comprising the following steps: the metal photonic crystal coupling enhanced nano-LED array comprises: the LED comprises a Si substrate, a Ni/Au metal array and a p-electrode connecting wire which are positioned on the Si substrate, a nano-LED array positioned on the Ni/Au metal array, an n-type GaN layer positioned on the nano-LED array, and a Ti/Au metal layer positioned on the n-type GaN layer; wherein the nano-LED array comprises from bottom to top: the GaN-based LED comprises a Ni/Au metal layer, an Ag metal layer positioned on the Ni/Au metal layer, a p-type GaN layer positioned on the Ag metal layer, an InGaN/GaN quantum well layer positioned on the p-type GaN layer, and an n-type GaN layer positioned on the InGaN/GaN quantum well layer; the Ni/Au metal array comprises a lower Ni metal array and an upper Au metal array; the Ti/Au metal layer comprises a lower Ti metal array and an upper Au metal array; each nano-LED monomer is provided with a separate p contact, and all the nano-LED monomers share one n contact; the Ag metal layer forms Ag metal photonic crystals in the array, the luminous efficiency is enhanced by utilizing the properties of photon forbidden bands and metal surface plasmons, the diameter of the Ag metal array is 140nm, the period is 800nm, and the surface plasmons are generated by the Ag metal layer; the middle part is of an inverted structure, and the absorption of the bottom substrate is reduced by utilizing the reflector effect of the Ag metal photonic crystal; the nano-LED array and the Ag metal photonic crystal have the same period and the same diameter; the nano-LED array and the Ni/Au metal array on the Si substrate are consistent in period and same in diameter;
the manufacturing method comprises the following steps:
101, growing a Ni metal layer and an Au metal layer on a Si substrate in sequence by utilizing a metal organic compound chemical vapor deposition technology, and forming a Ni/Au array and a p electrode connecting wire by utilizing a plasma etching technology;
step 102, sequentially growing an n-type GaN layer, a quantum well layer, a p-type GaN layer, an Ag metal layer, a Ni metal layer and an Au metal layer on a sapphire substrate by utilizing a metal organic compound chemical vapor deposition technology; the quantum well layer is of an InGaN and GaN alternating structure;
103, etching the Au metal layer to 1/3 positions of the thickness of the n-type GaN layer through a plasma etching method to form a nano-LED array;
104, bonding the nano-LED array and the Ni/Au metal array on the Si substrate in a one-to-one mode by utilizing a flip chip technology and a metal bonding technology;
and 105, stripping the sapphire substrate positioned at the uppermost position, and sequentially growing a Ti metal layer and an Au metal layer on the n-type GaN layer by utilizing a metal organic compound chemical vapor deposition technology to form an n electrode.
2. The method of manufacturing a metal photonic crystal coupling enhanced nano-LED array according to claim 1, wherein: in step 103, the specific steps of preparing the nano-LED array containing the metal photonic crystal are as follows:
step 1031, spin-coating photoresist on the upper surface of the Au metal layer;
step 1032, using the photoresist as a mask plate, and introducing etching gas, wherein the volume ratio of the etching gas is as follows: BCl3:Cl2Ar is 6:3:20, and the etching time is 220 seconds;
1033, etching the array with the period of 800nm and the diameter of 140nm by using a plasma etching method;
and 1034, removing the photoresist.
3. The method of manufacturing a metal photonic crystal coupling enhanced nano-LED array according to claim 1, wherein: the step 101 is specifically as follows:
step 1011, growing an 8nm Ni layer on the Si substrate by utilizing a metal organic compound chemical vapor deposition technology;
step 1012, growing an Au layer of 2nm on the Ni metal layer by utilizing a metal organic compound chemical vapor deposition technology;
1013, spin-coating photoresist on the Au layer;
step 1014, manufacturing a mask by using the photoresist, and introducing etching gas, wherein the volume ratio of the etching gas is as follows: BCl3:Cl2Ar is 6:3:20, and the etching time is 10 seconds;
and step 1015, etching the Ni/Au array with the period of 800nm and the diameter of 140nm and the p-electrode connecting wire with the width of 70nm by using a plasma etching technology.
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