CN103187503A - Efficient light-emitting diode containing metal photonic crystal - Google Patents
Efficient light-emitting diode containing metal photonic crystal Download PDFInfo
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- CN103187503A CN103187503A CN2012105106592A CN201210510659A CN103187503A CN 103187503 A CN103187503 A CN 103187503A CN 2012105106592 A CN2012105106592 A CN 2012105106592A CN 201210510659 A CN201210510659 A CN 201210510659A CN 103187503 A CN103187503 A CN 103187503A
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Abstract
The invention discloses an efficient light-emitting diode containing a metal photonic crystal. The efficient light-emitting diode containing the metal photonic crystal is characterized by being composed of a substrate (1), a n-type layer (2), a multi-quantum well (3), a p-type layer (4) and the metal photonic crystal (5), wherein the metal photonic crystal (5) is located above the p-type layer (4). According to the efficient light-emitting diode containing the metal photonic crystal disclosed by the invention, the divergence angle of the outgoing beam of the LED (light-emitting diode) is reduced by virtue of the surface plasmon resonance effect and the energy aggregation effect of the metal photonic crystal, and the photonic band gap light-guiding characteristic of the metal photonic crystal, so that the light-emitting efficiency of the LED can be greatly increased.
Description
Technical field
The present invention relates to a kind of light-emitting diode of containing metal photonic crystal, belong to the semiconductor photoelectronic device technical field.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be called as the 4th generation lighting source or green light source, have characteristics such as energy-saving and environmental protection, the life-span is long, volume is little, can be widely used in fields such as various indications, demonstration, decoration, backlight, general lighting and urban landscape.But because semi-conducting material and the air of LED active layer are in a ratio of high index of refraction, total reflection will take place at the interface of LED medium and air in light, the outgoing of light seriously is limited by total reflection phenomenon in the LED at how parallel interface structure, cause the light extraction efficiency low, the GaN base LED light extraction efficiency of traditional structure only is 4%, overwhelming majority luminous energy all is depleted, and luminous efficiency is lower, causes the significant wastage of the energy.At present more existing technology are used for improving the LED light extraction efficiency, and such as surface coarsening technology, flip chip technology etc., but effect is not very good, and efficient only can improve about 20%.At present domestic manufacturer adopts the highest LED that single 100lm/w can be provided of above-mentioned new technology, and wants to replace incandescent lamp and fluorescent lamp enters general illumination market, and its light efficiency needs to reach 150lm/w at least, and prior art still has big gap.
The photonic crystal technology is to handle a kind of new technology of photon spread, is band gap leaded light mechanism but not refractive index leaded light mechanism designs flexible and convenient to use.The photonic crystal of metal structure has the SPP effect again simultaneously, can realize the raising of incident intensity.SPP refers to be induced by external electromagnetic field (as light wave) collective oscillation of metal micro-nanostructure surface free electron, it has two big outstanding features, the one, and huge local field resonance enhancement (Surface Plasmon Resonance, SPR), enhancing can reach thousand times; The 2nd, superpower energy-polling effect can accumulate in energy of electromagnetic field the nanometer scale scope, breaks through traditional diffraction limit.Therefore, if photonic crystal technology and the SPP technology light extraction efficiency that might realize LED fully that combines is brought up to 80%, realize the high-brightness LED of single 220lm/w.
Summary of the invention
The technical issues that need to address of the present invention are: overcome the deficiencies in the prior art, photonic crystal technology and micro-nano metal surface phasmon theory are combined, a kind of novel light-emitting diode that can realize Ultra-High Efficiency is provided.
Technical solution of the present invention is: a kind of efficient LED of containing metal photonic crystal, to be formed by substrate, n type layer, Multiple Quantum Well, p-type layer and metal photonic crystal, and metal photonic crystal is positioned on the p-type layer.
The thickness of described metal photonic crystal (5) is 10nm-100nm.
Described metal photonic crystal (5) is made of cycle medium post (6) or the cycle airport (7) of arranging of arranging; The arrange material of medium post (6) of cycle can be gold or silver or aluminium; Cycle is arranged cycle of medium post (6) for (0.2～0.4) times light-emitting diode emergent light centre wavelength, duty ratio 0.2～0.6; Cycle is arranged cycle of airport (7) for (0.3～0.5) times light-emitting diode emergent light centre wavelength, duty ratio 0.7～0.95;
The structure cell of described metal photonic crystal can be square or triangle or hexagon.
The photon band gap of described metal photonic crystal is positioned at the vacuum frequency place of light-emitting diode outgoing centre wavelength correspondence.
The present invention compared with prior art has following advantage:
1. the luminous efficiency of superelevation.The present invention utilizes the surface phasmon effect of metal photonic crystal, by metal surface phasmon and quantum well coupling, strengthen the spontaneous radiation efficient of light, the resonance by the metal surface phasmon simultaneously is coupled, the resonance that realizes the outgoing light wave strengthens, and can greatly improve the luminous efficiency of LED.
2. outgoing beam good directionality.The present invention utilizes the photon band gap leaded light of metal photonic crystal, reduce the dispersion angle of outgoing beam, utilize the energy accumulating effect of metal surface phasmon simultaneously, dwindle the emergent light spot size, thereby make outgoing beam not only bright but also straight, improve the directivity of outgoing beam.
3. design flexible means.At the LED of different-waveband, the cycle of photon crystal structure, thickness, structure cell shape all can be adjusted, and flexible design is convenient.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the medium post vertical view of arranging in the cycle of the present invention;
Fig. 3 is the airport vertical view of arranging in the cycle of the present invention.
Embodiment
As shown in Figure 1, the present invention is made up of substrate (1), n type layer (2), Multiple Quantum Well (3), p-type layer (4) and metal photonic crystal (5), and metal photonic crystal (5) is positioned on the p-type layer (4).The invention will be further described below in conjunction with drawings and Examples.
Present embodiment is that example is set forth technical scheme of the present invention with the InGaN light-emitting diode.
When substrate (1) is that GaN, n type layer (2) are p-GaN for n-GaN, Multiple Quantum Well (3) for InGaN/GaN, p-type layer (4), when metal photonic crystal (5) is arranged medium post (6) formation by the cycle, it is the InGaN efficient LED of a containing metal photonic crystal.
The thickness of metal photonic crystal (5) is 10nm-100nm, and material can be gold or silver or aluminium.When the light wave process p-type layer (4) that sends radiates outwardly to and reaches metal photonic crystal (5), will inspire surface plasma-wave when the middle charge carrier of InGaN/GaN Multiple Quantum Well (3) and hole-recombination.When the thickness of metal photonic crystal (5) is 10nm-100nm, the cycle medium post (6) of arranging provides reciprocal lattice vector, satisfies the wave vector matching condition, the plasma wave coupling of metal photonic crystal (5) upper and lower surface, resonance enhancement takes place, and realizes the intensity enhancing of incident light wave.The structure cell of metal photonic crystal (5) can be square or triangle or hexagon, arrange cycle of medium post (6) for (0.2～0.4) times light-emitting diode emergent light centre wavelength when the cycle, duty ratio 0.2～0.6 o'clock, the photon band gap of metal photonic crystal (5) is positioned at the vacuum frequency place of InGaN light-emitting diode outgoing centre wavelength correspondence, reduces the dispersion angle of outgoing beam.
Present embodiment is that example is set forth technical scheme of the present invention with the AlGaInP light-emitting diode.
When substrate (1) is that GaAs, n type layer (2) are p-GaP for n-GaP, Multiple Quantum Well (3) for AlGaInP/GaInP, p-type layer (4), when metal photonic crystal (5) is arranged airport (7) formation by the cycle, it is the AlGaInP efficient LED of a containing metal photonic crystal.
The thickness of metal photonic crystal (5) is 10nm-100nm, and material can be gold or silver or aluminium.When the light wave process p-type layer (4) that sends radiates outwardly to and reaches metal photonic crystal (5), will inspire surface plasma-wave when the middle charge carrier of AlGaInP/GaInP Multiple Quantum Well (3) and hole-recombination.When the thickness of metal photonic crystal (5) is 10nm-100nm, the cycle airport (7) of arranging provides reciprocal lattice vector, satisfies the wave vector matching condition, the plasma wave coupling of metal photonic crystal (5) upper and lower surface, resonance enhancement takes place, and realizes the intensity enhancing of incident light wave.The structure cell of metal photonic crystal (5) can be square or triangle or hexagon, arrange cycle of airport (7) for (0.3～0.5) times light-emitting diode emergent light centre wavelength when the cycle, duty ratio 0.7～0.95, the photon band gap of metal photonic crystal (5) is positioned at the vacuum frequency place of AlGaInP light-emitting diode outgoing centre wavelength correspondence, reduces the dispersion angle of outgoing beam.
Claims (5)
1. the efficient LED of a containing metal photonic crystal, it is characterized in that: be made up of substrate (1), n type layer (2), Multiple Quantum Well (3), p-type layer (4) and metal photonic crystal (5), metal photonic crystal (5) is positioned on the p-type layer (4).
2. the efficient LED of a kind of containing metal photonic crystal according to claim 1, it is characterized in that: the thickness of described metal photonic crystal (5) is 10nm-100nm.
3. the efficient LED of a kind of containing metal photonic crystal according to claim 1 is characterized in that: described metal photonic crystal (5) is made of cycle medium post (6) or the cycle airport (7) of arranging of arranging; The arrange material of medium post (6) of cycle can be gold or silver or aluminium; Cycle is arranged cycle of medium post (6) for (0.2～0.4) times light-emitting diode emergent light centre wavelength, duty ratio 0.2～0.6; Cycle is arranged cycle of airport (7) for (0.3～0.5) times light-emitting diode emergent light centre wavelength, duty ratio 0.7～0.95.
4. the efficient LED of a kind of containing metal photonic crystal according to claim 1, it is characterized in that: the structure cell of described metal photonic crystal (5) can be square or triangle or hexagon.
5. the efficient LED of a kind of containing metal photonic crystal according to claim 1, it is characterized in that: the photon band gap of described metal photonic crystal (5) is positioned at the vacuum frequency place of light-emitting diode outgoing centre wavelength correspondence.
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| CN2012105106592A CN103187503A (en) | 2012-11-22 | 2012-11-22 | Efficient light-emitting diode containing metal photonic crystal |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560192A (en) * | 2013-11-05 | 2014-02-05 | 天津工业大学 | Metal plasmon coupling luminescence enhancement silicon substrate LED and manufacturing method thereof |
| CN109037267A (en) * | 2018-06-29 | 2018-12-18 | 天津工业大学 | Metal photonic crystal coupling enhancing nano-LED array and manufacturing method |
| CN112133803A (en) * | 2020-09-21 | 2020-12-25 | 厦门乾照光电股份有限公司 | Light emitting diode and manufacturing method thereof |
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| CN101789475A (en) * | 2010-01-21 | 2010-07-28 | 太原理工大学 | Photonic crystal light-emitting diode and manufacturing method thereof |
| CN102201552A (en) * | 2011-05-17 | 2011-09-28 | 中国科学院光电技术研究所 | Method for fabricating electroluminescent reinforced structure of organic light emitting diode |
| CN203055972U (en) * | 2012-11-22 | 2013-07-10 | 安徽师范大学 | A high-efficiency light emitting diode (LED) containing metallic photonic crystals |
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- 2012-11-22 CN CN2012105106592A patent/CN103187503A/en active Pending
Patent Citations (4)
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| US20080199653A1 (en) * | 2007-02-15 | 2008-08-21 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Method of forming two-dimensional pattern by using nanospheres |
| CN101789475A (en) * | 2010-01-21 | 2010-07-28 | 太原理工大学 | Photonic crystal light-emitting diode and manufacturing method thereof |
| CN102201552A (en) * | 2011-05-17 | 2011-09-28 | 中国科学院光电技术研究所 | Method for fabricating electroluminescent reinforced structure of organic light emitting diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560192A (en) * | 2013-11-05 | 2014-02-05 | 天津工业大学 | Metal plasmon coupling luminescence enhancement silicon substrate LED and manufacturing method thereof |
| CN109037267A (en) * | 2018-06-29 | 2018-12-18 | 天津工业大学 | Metal photonic crystal coupling enhancing nano-LED array and manufacturing method |
| CN109037267B (en) * | 2018-06-29 | 2021-09-14 | 天津工业大学 | Metal photonic crystal coupling enhanced nano-LED array and manufacturing method thereof |
| CN112133803A (en) * | 2020-09-21 | 2020-12-25 | 厦门乾照光电股份有限公司 | Light emitting diode and manufacturing method thereof |
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Application publication date: 20130703 |