CN204088355U - A kind of light emitting diode construction - Google Patents
A kind of light emitting diode construction Download PDFInfo
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- CN204088355U CN204088355U CN201420584643.0U CN201420584643U CN204088355U CN 204088355 U CN204088355 U CN 204088355U CN 201420584643 U CN201420584643 U CN 201420584643U CN 204088355 U CN204088355 U CN 204088355U
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- 238000010276 construction Methods 0.000 title claims abstract description 18
- 238000000059 patterning Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000013517 stratification Methods 0.000 claims description 6
- 230000001427 coherent effect Effects 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 9
- 230000008033 biological extinction Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010534 mechanism of action Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- -1 surface coarsening Substances 0.000 description 1
Abstract
The utility model relates to a kind of light emitting diode construction, comprise ray structure, described ray structure comprises N-type layer, quantum well layer and P-type layer from top to bottom successively, it is characterized in that: the distributed Bragg reflecting layer being mingled with patterning between described P-type layer and quantum well layer.The utility model, by setting up distributed Bragg reflecting layer between P-type layer and quantum well layer, can take out the light that luminescent layer sends effectively, reduces the extinction phenomenon of P-type layer, thus increases light extraction efficiency.
Description
Technical field
The utility model relates to a kind of light emitting diode construction, especially relates to a kind of light emitting diode construction with distributed Bragg reflecting layer.
Background technology
Light-emitting diode (English is Light Emitting Diode, is called for short LED) is a kind of light emitting semiconductor device, is widely used in indicator light, display screen etc.White light LEDs is the third generation electric light source after incandescent lamp and fluorescent lamp, and having become the target that light source and light fixture research institution all over the world competitively develop, make great efforts acquisition, is the star industry of following lighting field.The energy consumption of white light LEDs is only 1/8 of incandescent lamp, 1/2 of fluorescent lamp, and its life-span is 100,000 hours, is " putting things right once and for all " for average family illumination.Also can realize mercuryless simultaneously, reclaim easily, for environmental protection and energy savings significant.
The external quantum efficiency of LED is determined by internal quantum efficiency and light extraction efficiency, and through making great efforts for many years, nowadays internal quantum efficiency is close to the limit, the limited space of lifting, and therefore light extraction efficiency depends on the luminous efficiency of LED to a great extent.For this reason, the research improving LED luminous efficiency is comparatively active, major technique has employing graph substrate technology, current barrier layer, distributed Bragg reflecting layer (English is Distributed Bragg Reflector, is called for short DBR) structure, transparent substrates, surface coarsening, photonic crystal technology etc.
Summary of the invention
The utility model provides a kind of light emitting diode construction, it by forming the distributed Bragg reflecting layer of patterning between the quantum well layer and P-type layer of LED ray structure, effectively can take out the light that quantum well layer sends, reduce the extinction phenomenon of P-type layer, thus increase light extraction efficiency.
A kind of light emitting diode construction disclosed in the utility model, comprise ray structure, described ray structure comprises N-type layer, quantum well layer and P-type layer from top to bottom successively, it is characterized in that: the distributed Bragg reflecting layer being mingled with patterning between described P-type layer and quantum well layer.
In certain embodiments, described ray structure is divided into secondary epitaxy to form layer.N-type layer in described ray structure, quantum well layer are first time extension formation layer, and P-type layer is that second time extension forms layer; Or the P-type layer in described ray structure is first time extension formation layer, N-type layer, quantum well layer are that second time extension forms layer.
In certain embodiments, the distributed Bragg reflecting layer of described patterning has at least a part to be positioned at the top layer of P-type layer or quantum well layer.
In certain embodiments, the distributed Bragg reflecting layer any part of described patterning is not positioned at the top layer of P-type layer or quantum well layer.
In certain embodiments, pore space structure is had between the distributed Bragg reflecting layer of described patterning.
In certain embodiments, the distributed Bragg reflecting layer of described patterning is multiple mutual disjunct independent drawings.
In certain embodiments, the distributed Bragg reflecting layer of described patterning is mutually coherent figure.
In certain embodiments, described distributed Bragg reflecting layer is made up of the high index of refraction of cycle alternation and low refractive index material layer, and cycle alternation number of times is 2 ~ 20.
In certain embodiments, high index of refraction layer material is selected from TiO, TiO
2, Ti
3o
5, Ti
2o
3, Ta
2o
5, ZrO
2one of or aforesaid combination in any, low-refraction layer material is selected from SiO
2, SiN
x, Al
2o
3one of or aforesaid combination in any.
In certain embodiments, described light-emitting diode is vertical stratification or inverted structure or positive assembling structure.
Compared with prior art, the beneficial effects of the utility model include but not limited to:
(1) the utility model by setting up distributed Bragg reflecting layer between P-type layer and quantum well layer, the light towards substrate that quantum well is sent reflects through distributed Bragg reflecting layer, turn light rays upward, reduce or avoid the light sent from quantum well to be absorbed by P-type layer, thus increase light extraction, improve luminous efficiency;
(2) some perforations is had between the distributed Bragg reflecting layer of patterning, through refractive index principle, in the interface generation total reflection of quantum well layer and hole, thus reduce further or avoid the light sent from quantum well to be absorbed by P-type layer, effectively promoting the light extraction efficiency of chip.
Other features and advantages of the utility model will be set forth in the following description, and, partly become apparent from specification, or understand by implementing the utility model.The purpose of this utility model and other advantages realize by structure specifically noted in specification, claims and accompanying drawing and obtain.
Although the utility model will be described in conjunction with some exemplary enforcements and using method hereinafter, it will be appreciated by those skilled in the art that and be not intended to the utility model to be limited to these embodiments.Otherwise, be intended to cover all substitutes be included in spirit of the present utility model and scope that appending claims defines, correction and equivalent.
Accompanying drawing explanation
Accompanying drawing is used to provide further understanding of the present utility model, and forms a part for specification, is used from explanation the utility model with inventive embodiment one, does not form the restriction to invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the generalized section of light-emitting diode disclosed in the utility model embodiment 1.
Fig. 2 is the generalized section of light-emitting diode disclosed in the utility model embodiment 2.
Fig. 3 is the generalized section of light-emitting diode disclosed in the utility model embodiment 3.
Fig. 4 is the generalized section of light-emitting diode disclosed in the utility model embodiment 4.
Fig. 5 is the generalized section of light-emitting diode disclosed in the utility model embodiment 5.
Fig. 6 is the generalized section of light-emitting diode disclosed in the utility model embodiment 6.
Parts symbol description in figure:
101:N type layer; 102: quantum well layer; 103: distributed Bragg reflecting layer; 104:P type layer; 105: substrate; 106:P electrode; 107:N electrode;
201:N type layer; 202: quantum well layer; 203: distributed Bragg reflecting layer; 204:P type layer; 205: substrate; 206:P electrode; 207:N electrode; 208: bonded layer;
301:N type layer; 302: quantum well layer; 303: distributed Bragg reflecting layer; 304:P type layer; 305: substrate; 306:P electrode; 307:N electrode; 308: hole;
401:N type layer; 402: quantum well layer; 403: distributed Bragg reflecting layer; 404:P type layer; 405: substrate; 406:P electrode; 407:N electrode; 408: heat-radiating substrate;
501:N type layer; 502: quantum well layer; 503: distributed Bragg reflecting layer; 504:P type layer; 505: substrate; 506:P electrode; 507:N electrode; 508: heat-radiating substrate;
601:N type layer; 602: quantum well layer; 603: distributed Bragg reflecting layer; 604:P type layer; 605: substrate; 606:P electrode; 607:N electrode.
Embodiment
Describe execution mode of the present utility model in detail below with reference to drawings and Examples, to the utility model, how application technology means solve technical problem whereby, and the implementation procedure reaching technique effect can fully understand and implement according to this.It should be noted that, only otherwise form conflict, each embodiment in the utility model and each feature in each embodiment can be combined with each other, and the technical scheme formed is all within protection range of the present utility model.At concrete device layout with in manufacturing, the needs that the LED structure that the utility model proposes will be implemented according to application and manufacturing process, modify within the specific limits its part-structure and size, carry out accommodation to choosing of material.
The more details specifically implemented below in conjunction with embodiment 1 ~ 6 and accompanying drawing 1 ~ 6 pair of the utility model explain.
embodiment 1
As shown in Figure 1, the light-emitting diode with distributed Bragg reflecting layer of a kind of vertical stratification of the present embodiment, comprises from bottom to up successively: P electrode 106, silicon (Si) substrate 105, P-type layer 104, distributed Bragg reflecting layer 103, quantum well layer 102, N-type layer 101 and N electrode 107.
Specifically, in above-mentioned light emitting diode construction, the bottom is P electrode 106; Silicon (Si) substrate 105, is positioned in P electrode 106; Ray structure, is positioned on silicon (Si) substrate 105, wherein comprises P-type layer 104, quantum well layer 102 and N-type layer 101 from bottom to up successively; N electrode 107, is positioned on ray structure; Wherein be mingled with the distributed Bragg reflecting layer 103 of patterning between P-type layer 104 and quantum well layer 102.Distributed Bragg reflecting layer 103 is made up of the high index of refraction of cycle alternation and low refractive index material layer, and cycle alternation number of times is 2 ~ 20, the present embodiment cycle alternation number of times preferably 5 times; High index of refraction layer material is selected from TiO, TiO
2, Ti
3o
5, Ti
2o
3, Ta
2o
5, ZrO
2one of or aforesaid combination in any, low-refraction layer material is selected from SiO
2, SiN
x, Al
2o
3one of or aforesaid combination in any, at the preferred TiO of the present embodiment high-index material
2, the preferred SiO of low-index material
2.In addition, in general, ray structure can select the materials such as AlGaInN, so P-type layer can be P-GaN layer, also can be P-AlGaN layer, P-AlGaIn layer, P-AlGaInN layer etc., or its aforementioned combination in any, at the preferred P-GaN layer of the present embodiment P-type layer.
In the present embodiment, above-mentioned distributed Bragg reflecting layer 103 is between P-type layer 104 and quantum well layer 102, and it can be positioned at the top layer of P-type layer 104, i.e. the upper surface of distributed Bragg reflecting layer 103 and the upper surface flush of P-type layer 104; It is pointed out that distributed Bragg reflecting layer also can be positioned at the top layer of quantum well layer, namely the lower surface of distributed Bragg reflecting layer flushes with the lower surface of quantum well layer; Distributed Bragg reflecting layer can also be the top layer that a part is positioned at quantum well layer, and another part is positioned at the top layer of P-type layer.
Above-mentioned ray structure can be divided into secondary epitaxy to form layer, and wherein N-type layer 101, quantum well layer 102 can be first time extension formation layer, and P-type layer 104 is second time extension formation layer.It is of course understood that also can be P-type layer in ray structure for first time extension forms layer, and N-type layer, quantum well layer be second time extension formation layer.
The distributed Bragg reflecting layer of above-mentioned patterning can be multiple mutual disjunct independent drawings, also can be mutually coherent figure, be preferably multiple mutual disjunct independent drawing at the present embodiment distributed Bragg reflecting layer 103.
Knownly, conventional its some light of LED chip can from can through P-type layer to substrate after quantum well layer sends, metallic mirror, P-type layer, quantum well layer and N-type layer again under substrate (reflectivity) or substrate (transparency) send, such light, absorbing larger P-type layer back and forth twice, can cause certain light loss.The present embodiment by having additional the distributed Bragg reflecting layer 103 of the patterning of periodic distribution between P-type layer 104 and quantum well layer 102, the light towards substrate that quantum well can be made to send reflects through distributed Bragg reflecting layer, turn light rays upward, reduce or avoid the light sent from quantum well to be absorbed by P-type layer 104, thus increase light extraction, improve luminous efficiency.
embodiment 2
As shown in Figure 2, present embodiment discloses a kind of light-emitting diode with distributed Bragg reflecting layer of vertical stratification.At the present embodiment, adopt Si as substrate 205, N electrode 206 is formed at the back side of substrate, constitutes the LED device structure of vertical stratification.Compared with embodiment 1, unlike, directly bonded layer 208 is also provided with in Si substrate 205 and P-type layer 204, this bonded layer preferably can use reflective metals, for reflecting the light that quantum well sends, make its outgoing upward, reduce the probability that it is absorbed by substrate, thus further improve light extraction efficiency.
embodiment 3
As shown in Figure 3, present embodiment discloses a kind of light-emitting diode with distributed Bragg reflecting layer of vertical stratification.At the present embodiment, the distributed Bragg reflecting layer 303 of patterning is between P-type layer 304 and quantum well layer 302, but distributed Bragg reflecting layer 303 is not positioned at P-type layer 304 or quantum well layer 302 top layer, namely the upper surface of distributed Bragg reflecting layer 303 flushes with quantum well layer 302 lower surface, the lower surface of distributed Bragg reflecting layer 303 and the upper surface flush of P-type layer 304.In addition, through first time extension form N-type layer 301, quantum well layer 302, then plate distributed Bragg reflecting layer 303, and after form P-type layer 304 through second time extension, thus make there is some perforations 308 between the distributed Bragg reflecting layer 303 of patterning.
Its mechanism of action of distributed Bragg reflecting layer in the present embodiment is similar to Example 1, does not repeat them here.But it is emphasized that the hole described in the present embodiment also has the effect of reflection quantum well layer emitted light.Have, the refractive index of setting hole 308 is n
1=1, and in general, the refractive index of quantum well layer 304 is n
2≈ 2.3, then the critical angle that total reflection occurs is θ c=arcsin (n
1/ n
2), as incidence angle θ > θ c, there is total reflection in interface.According to Snell law, can there is total reflection, n in the present embodiment in close the dredging to light of light
1<n
2, then as incidence angle θ > θ c, can total reflection be there is at quantum well layer 302 and the interface of hole 308, thus reduce further or avoid the light sent from quantum well to be absorbed by P-type layer 304, effectively promote the light extraction efficiency of chip.
embodiment 4
As shown in Figure 4, present embodiment discloses a kind of light-emitting diode with distributed Bragg reflecting layer of inverted structure.At the present embodiment, adopt sapphire as substrate 205; N-type layer 401, quantum well layer 402 and P-type layer 404, be formed in Sapphire Substrate 205 successively; P electrode 406, is formed in P-type layer 404; N electrode 407, is formed in N-type layer 401; P electrode 406 and N electrode 407 can be bonded by Au gold wire ball solder joint (not shown) and Si heat-radiating substrate 408; Wherein be mingled with the distributed Bragg reflecting layer 403 of patterning between P-type layer 404 and quantum well layer 402.Its mechanism of action of distributed Bragg reflecting layer in the present embodiment is similar to Example 1, does not repeat them here.
embodiment 5
As shown in Figure 5, present embodiment discloses a kind of light-emitting diode with distributed Bragg reflecting layer of inverted structure.As different from Example 4, the distributed Bragg reflecting layer 503 of the patterning of the present embodiment is mutually coherent figure, and distributed Bragg reflecting layer 503 is positioned at the top layer of quantum well layer 502, namely the lower surface of distributed Bragg reflecting layer 503 flushes with the lower surface of quantum well layer 502.
embodiment 6
As shown in Figure 6, present embodiment discloses a kind of light-emitting diode with distributed Bragg reflecting layer of positive assembling structure.The distributed Bragg reflecting layer 603 of the patterning of the present embodiment is several mutual disjunct independent drawings, wherein each independent drawing size can be incomplete same, specifically: the distributed Bragg reflecting layer area be positioned at immediately below P electrode 606 is more than or equal to the area (more bigger especially good) of P electrode, and other distributed Bragg reflecting layer (not being positioned at immediately below P electrode 606) can distribute in grid type, the light that part quantum well 602 so can be made to send is (and/or sidewall) outgoing down after the reflection of distributed Bragg reflecting layer 603, and some light without the reflection of distributed Bragg reflecting layer 603 directly to upper (and/or sidewall) outgoing, light that quantum well sends can be controlled up or down or the outgoing ratio of sidewall by adjusting the size of distributed Bragg reflecting layer 603, thus realize the uniformity comprehensive bright dipping in ground.
Above embodiment is only for illustration of the utility model, but not to restriction of the present utility model, person skilled in the relevant technique, when not departing from these spirit and scope of the present utility model, can also make various conversion or change.Therefore, all equivalent technical schemes also should belong to category of the present utility model, should be limited by each claim.
Claims (10)
1. a light emitting diode construction, comprises ray structure, and described ray structure comprises N-type layer, quantum well layer and P-type layer from top to bottom successively, it is characterized in that: the distributed Bragg reflecting layer being mingled with patterning between described P-type layer and quantum well layer.
2. a kind of light emitting diode construction according to claim 1, is characterized in that: the distributed Bragg reflecting layer of described patterning has at least a part to be positioned at the top layer of P-type layer or quantum well layer.
3. a kind of light emitting diode construction according to claim 1, is characterized in that: the distributed Bragg reflecting layer any part of described patterning is not positioned at the top layer of P-type layer or quantum well layer.
4. a kind of light emitting diode construction according to claim 3, is characterized in that: have pore space structure between the distributed Bragg reflecting layer of described patterning.
5. a kind of light emitting diode construction according to claim 1, is characterized in that: the distributed Bragg reflecting layer of described patterning is multiple mutual disjunct independent drawings.
6. a kind of light emitting diode construction according to claim 1, is characterized in that: the distributed Bragg reflecting layer of described patterning is mutually coherent figure.
7. a kind of light emitting diode construction according to claim 1, is characterized in that: described ray structure is divided into secondary epitaxy to form layer.
8. a kind of light emitting diode construction according to claim 7, is characterized in that: the N-type layer in described ray structure, quantum well layer are first time extension formation layer, and P-type layer is second time extension formation layer; Or the P-type layer in described ray structure is first time extension formation layer, N-type layer, quantum well layer are that second time extension forms layer.
9. a kind of light emitting diode construction according to claim 1, is characterized in that: described distributed Bragg reflecting layer is made up of the high index of refraction of cycle alternation and low refractive index material layer.
10. a kind of light emitting diode construction according to claim 1, is characterized in that: described light-emitting diode is vertical stratification or inverted structure or positive assembling structure.
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| CN201420584643.0U CN204088355U (en) | 2014-10-11 | 2014-10-11 | A kind of light emitting diode construction |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868033A (en) * | 2015-03-31 | 2015-08-26 | 山西南烨立碁光电有限公司 | Novel structure capable of improving luminance of light-emitting diode |
| CN109192834A (en) * | 2018-08-27 | 2019-01-11 | 厦门市三安光电科技有限公司 | A kind of nitride semiconductor LED |
| CN110311024A (en) * | 2015-02-17 | 2019-10-08 | 新世纪光电股份有限公司 | Light emitting diode |
| CN111697114A (en) * | 2020-07-29 | 2020-09-22 | 东南大学苏州研究院 | LED chip with vertical structure and preparation method thereof |
| CN114242857A (en) * | 2021-12-10 | 2022-03-25 | 佛山市国星半导体技术有限公司 | Epitaxial structure with Bragg reflector, preparation method of epitaxial structure and LED chip |
| US11508877B2 (en) | 2019-03-22 | 2022-11-22 | Genesis Photonics Inc. | Red light emitting diode and manufacturing method thereof |
-
2014
- 2014-10-11 CN CN201420584643.0U patent/CN204088355U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110311024A (en) * | 2015-02-17 | 2019-10-08 | 新世纪光电股份有限公司 | Light emitting diode |
| CN104868033A (en) * | 2015-03-31 | 2015-08-26 | 山西南烨立碁光电有限公司 | Novel structure capable of improving luminance of light-emitting diode |
| CN104868033B (en) * | 2015-03-31 | 2019-08-02 | 山西南烨立碁光电有限公司 | Promote the structure of light-emitting diode luminance |
| CN109192834A (en) * | 2018-08-27 | 2019-01-11 | 厦门市三安光电科技有限公司 | A kind of nitride semiconductor LED |
| US11508877B2 (en) | 2019-03-22 | 2022-11-22 | Genesis Photonics Inc. | Red light emitting diode and manufacturing method thereof |
| CN111697114A (en) * | 2020-07-29 | 2020-09-22 | 东南大学苏州研究院 | LED chip with vertical structure and preparation method thereof |
| CN111697114B (en) * | 2020-07-29 | 2021-01-12 | 东南大学苏州研究院 | LED chip with vertical structure and preparation method thereof |
| CN114242857A (en) * | 2021-12-10 | 2022-03-25 | 佛山市国星半导体技术有限公司 | Epitaxial structure with Bragg reflector, preparation method of epitaxial structure and LED chip |
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Effective date of registration: 20231025 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |