CN101872823A - Gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and preparation method thereof - Google Patents
Gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and preparation method thereof Download PDFInfo
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- CN101872823A CN101872823A CN201010200851A CN201010200851A CN101872823A CN 101872823 A CN101872823 A CN 101872823A CN 201010200851 A CN201010200851 A CN 201010200851A CN 201010200851 A CN201010200851 A CN 201010200851A CN 101872823 A CN101872823 A CN 101872823A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 73
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 25
- 239000010980 sapphire Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000009826 distribution Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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Abstract
The invention discloses a gallium nitride-based light-emitting diode (LED) with distributed Bragg reflectors on side walls and a preparation method thereof. The preparation method comprises the following steps of: sequentially growing a N-GaN layer, a multiple-quantum well layer and a P-GaN layer on a sapphire substrate; forming a transparent conducting layer on the P-GaN layer; etching part of a table top on which the transparent conducting layer is positioned by a light shield until the N-GaN layer is exposed; forming a P electrode on the transparent conducting layer; forming a N electrode on the exposed N-GaN layer; forming the distributed Bragg reflectors on the side walls of the sapphire substrate, the N-GaN layer, the multiple quantum well layer and the P-GaN layer; and thinning and polishing the sapphire substrate, and cutting the sapphire substrate into independent LED core grains. Compared with the prior art, the invention has the advantage that the distributed Bragg reflectors with excellent reflectivity are arranged on the side walls of an LED chip, thus when light reaches the side surfaces of the sapphire substrate, light output or light extraction can be effectively increased, and the external quantum efficiency of the LED can be effectively improved.
Description
Technical field
The present invention relates to gallium nitride based light emitting diode, particularly a kind of sidewall has gallium nitride based light emitting diode of distribution Bragg reflector and preparation method thereof.
Background technology
That light-emitting diode (English is Light Emitting Diode, be called for short LED) has is pollution-free, brightness is high, low in energy consumption, advantages such as the life-span is long, operating voltage is low, easy miniaturization.Along with the efficient of power-type GaN base LED constantly promotes, will become inundant trend with the alternative existing lighting source of GaN base LED semiconductor lamp; Yet semiconductor lighting will enter huge numbers of families, still has many problems to need to solve, and wherein most crucial problem is exactly luminous efficiency and production cost.
The existing method of improving the LED luminous efficiency mainly contains and adopts image substrate, transparency carrier, distribution Bragg reflector (the English Distributed Bragg Reflector of being is called for short DBR) structure, surface micro-structure, flip-chip, chip bonding, laser lift-off technique etc.Traditional gallium nitride based light emitting diode structure, as shown in Figure 1, on substrate 11, grow successively N-GaN layer 12, quantum well layer 13 and P-GaN layer 14; Transparency conducting layer 15 is formed on the P-GaN layer 14.These transparency conducting layer 15 end faces are provided with P electrode 16, and the P-GaN layer 14 of exposure is provided with N electrode 17.When light when quantum well layer 13 sends, this structure makes the sidewall bright dipping effectively to take out easily, i.e. upwards bright dipping has influenced the light extraction efficiency of light-emitting diode.
Summary of the invention
For solving the existing light extraction efficiency problem of above-mentioned light-emitting diode, the present invention aims to provide a kind of sidewall and has gallium nitride based light emitting diode of distribution Bragg reflector and preparation method thereof.
The present invention addresses the above problem the technical scheme that is adopted: sidewall has the gallium nitride based light emitting diode of distribution Bragg reflector, comprise a sapphire substrate, on sapphire substrate, stack gradually growth N-GaN layer, multiple quantum well layer and P-GaN layer, on the P-GaN layer, form transparency conducting layer, on transparency conducting layer, form a P electrode, on the exposure of N-GaN layer, form a N electrode; Distribution Bragg reflector is formed at the sidewall of sapphire substrate, N-GaN layer, multiple quantum well layer and P-GaN layer.
Prepare the method that above-mentioned sidewall has the gallium nitride based light emitting diode of distribution Bragg reflector, its processing step is as follows:
1) on sapphire substrate, grow successively N-GaN layer, multiple quantum well layer and P-GaN layer;
2) on the P-GaN layer, form transparency conducting layer;
3) by light shield, etching, with the part mesa etch at transparency conducting layer place to exposing the N-GaN layer;
4) on transparency conducting layer, form the P electrode;
5) on the N-GaN layer that exposes, form the N electrode;
6) on the sidewall of sapphire substrate, N-GaN layer, multiple quantum well layer and P-GaN layer, form distribution Bragg reflector;
7) with the sapphire substrate attenuate, polish and cut into independent LED core grains.
Among the present invention, described transparency conducting layer is selected from one of ITO, ZnO, In doping ZnO, Al doping ZnO, Ga doping ZnO or aforesaid combination in any; Distribution Bragg reflector is made up of high index of refraction that replaces and low refractive index material layer; The high index of refraction layer material of distribution Bragg reflector is selected from TiO, TiO
2, Ti
3O
5, Ti
2O
3, Ta
2O
5, ZrO
2One of or aforesaid combination in any; The low-refraction layer material of distribution Bragg reflector is selected from SiO
2, SiN
X, Al
2O
3One of or aforesaid combination in any.
The invention has the beneficial effects as follows: compared with prior art, the present invention has the distribution Bragg reflector of excellent reflection in the sidewall setting of led chip, when light arrives the sapphire substrate side, can effectively increase bright dipping or get light, can effectively improve the external quantum efficiency of light-emitting diode.
Description of drawings
Fig. 1 is the schematic diagram of traditional gallium nitride based light emitting diode.
Fig. 2 has the structural representation of the gallium nitride based light emitting diode of distribution Bragg reflector for sidewall of the present invention.
Among Fig. 2: 21. sapphire substrates; 22.N-GaN layer; 23. multiple quantum well layer; 24.P-GaN layer; 25. transparency conducting layer; 26.P electrode; 27.N electrode; 28. distribution Bragg reflector.
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
A kind of sidewall as shown in Figure 2 has the preparation method of the gallium nitride based light emitting diode of distribution Bragg reflector, and its processing step is:
On sapphire substrate 21, grow successively N-GaN layer 22, multiple quantum well layer 23 and P-GaN layer 24; Form ITO transparency conducting layer 25 on P-GaN layer 24;
By light shield, etching operation, with the part mesa etch at ITO transparency conducting layer 25 places to exposing N-GaN layer 22;
Form distribution Bragg reflector 28 in the sidewall of sapphire substrate 21, N-GaN layer 22, multiple quantum well layer 23 and P-GaN layer 24; Distribution Bragg reflector 28 is by the high index of refraction Ti that replaces
3O
5Material layer and low-refraction SiO
2Material layer is formed;
With sapphire substrate 21 attenuates, polish and cut into independently LED core grain.
As shown in Figure 2, the gallium nitride based light emitting diode that has distribution Bragg reflector according to the sidewall of above-mentioned prepared, its structure is: comprise a sapphire substrate 21, on sapphire substrate 21, stack gradually growth N-GaN layer 22, multiple quantum well layer 23 and P-GaN layer 24, on P-GaN layer 24, form ITO transparency conducting layer 25, on ITO transparency conducting layer 25, form a P electrode 26, on the exposure of N-GaN layer 22, form a N electrode 27; Distribution Bragg reflector 28 is formed at the sidewall of sapphire substrate 21, N-GaN layer 22, multiple quantum well layer 23 and P-GaN layer 24.
Above embodiment is only for the usefulness that the present invention is described, but not limitation of the present invention, those skilled in the art under the situation that does not break away from the spirit and scope of the present invention, can also make various conversion or variation; Therefore, all technical schemes that are equal to also should belong to category of the present invention, should be limited by each claim.
Claims (6)
1. sidewall has the gallium nitride based light emitting diode of distribution Bragg reflector, comprise a sapphire substrate, on sapphire substrate, stack gradually growth N-GaN layer, multiple quantum well layer and P-GaN layer, on the P-GaN layer, form transparency conducting layer, on transparency conducting layer, form a P electrode, on the exposure of N-GaN layer, form a N electrode; Distribution Bragg reflector is formed at the sidewall of sapphire substrate, N-GaN layer, multiple quantum well layer and P-GaN layer.
2. sidewall has the preparation method of the gallium nitride based light emitting diode of distribution Bragg reflector, and its processing step is as follows:
1) on sapphire substrate, grow successively N-GaN layer, multiple quantum well layer and P-GaN layer;
2) on the P-GaN layer, form transparency conducting layer;
3) by light shield, etching, with the part mesa etch at transparency conducting layer place to exposing the N-GaN layer;
4) on transparency conducting layer, form the P electrode;
5) on the N-GaN layer that exposes, form the N electrode;
6) on the sidewall of sapphire substrate, N-GaN layer, multiple quantum well layer and P-GaN layer, form distribution Bragg reflector;
7) with the sapphire substrate attenuate, polish and cut into independent LED core grains.
3. sidewall as claimed in claim 2 has the preparation method of the gallium nitride based light emitting diode of distribution Bragg reflector, it is characterized in that: transparency conducting layer is selected from one of ITO, ZnO, In doping ZnO, Al doping ZnO, Ga doping ZnO or aforesaid combination in any.
4. sidewall as claimed in claim 2 has the preparation method of the gallium nitride based light emitting diode of distribution Bragg reflector, it is characterized in that: distribution Bragg reflector is made up of high index of refraction that replaces and low refractive index material layer.
5. have the preparation method of the gallium nitride based light emitting diode of distribution Bragg reflector as claim 2 or 4 described sidewalls, it is characterized in that: the high index of refraction layer material of distribution Bragg reflector is selected from TiO, TiO
2, Ti
3O
5, Ti
2O
3, Ta
2O
5, ZrO
2One of or aforesaid combination in any.
6. have the preparation method of the gallium nitride based light emitting diode of distribution Bragg reflector as claim 2 or 4 described sidewalls, it is characterized in that: the low-refraction layer material of distribution Bragg reflector is selected from SiO
2, SiN
X, Al
2O
3One of or aforesaid combination in any.
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| CN103199183A (en) * | 2013-04-08 | 2013-07-10 | 厦门市三安光电科技有限公司 | Packaging structure enhancing brightness of vertical light-emitting diode (LED) chip |
| CN103296150A (en) * | 2012-03-01 | 2013-09-11 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103972346A (en) * | 2013-02-04 | 2014-08-06 | 刘胜 | Area light source device with high top-emergence rate and low side-emergence rate |
| CN104269486A (en) * | 2014-09-15 | 2015-01-07 | 映瑞光电科技(上海)有限公司 | Flip LED chip and manufacturing method thereof |
| CN104716245A (en) * | 2013-12-13 | 2015-06-17 | 晶元光电股份有限公司 | Light emitting device and manufacturing method thereof |
| US9306138B2 (en) | 2013-04-08 | 2016-04-05 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light emitting diode packaging structure |
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| CN103972346A (en) * | 2013-02-04 | 2014-08-06 | 刘胜 | Area light source device with high top-emergence rate and low side-emergence rate |
| CN103199183A (en) * | 2013-04-08 | 2013-07-10 | 厦门市三安光电科技有限公司 | Packaging structure enhancing brightness of vertical light-emitting diode (LED) chip |
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| CN104716245A (en) * | 2013-12-13 | 2015-06-17 | 晶元光电股份有限公司 | Light emitting device and manufacturing method thereof |
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