CN105977353B - A kind of UV LED - Google Patents

A kind of UV LED Download PDF

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Publication number
CN105977353B
CN105977353B CN201610306804.3A CN201610306804A CN105977353B CN 105977353 B CN105977353 B CN 105977353B CN 201610306804 A CN201610306804 A CN 201610306804A CN 105977353 B CN105977353 B CN 105977353B
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China
Prior art keywords
electrode
type
luminous zone
type electrode
layer
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Expired - Fee Related
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CN201610306804.3A
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Chinese (zh)
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CN105977353A (en
Inventor
武帅
潘兆花
万永泉
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Qingdao Jason Electric Co Ltd
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Qingdao Jason Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a kind of UV LEDs, including P-type electrode, N-type electrode, the n type semiconductor layer sequentially formed, luminous zone, p type semiconductor layer and contact layer, the side of the luminous zone is provided with the first refractive body for luminous zone side light extraction to be directed to positive light extraction.Thus, the first refractive body can increase the positive light extraction of diode, improve the light-output efficiency of UV LED.

Description

A kind of UV LED
Technical field
The present invention relates to semiconductor photoelectric device technical field more particularly to a kind of UV LEDs.
Background technology
With the development that LED is applied, because its spectral region is wider, (emission wavelength can cover 210-400nm to ultraviolet LED Wave band), it is more energy efficient and be free of noxious material mercury and widely answered with the incomparable advantage of other traditional UV sources For many aspects in life, such as ultraviolet disinfection, UV cured, optical sensor, ultraviolet light authentication, body fluid inspection The fields such as survey and analysis.Currently, the technical bottleneck of ultraviolet LED is mainly that luminous efficiency is relatively low.For wavelength less than 365nm's The output power of chip, ultraviolet LED is only the 5%-8% of input power;When wavelength is 385nm or more, the effect of purple LED Rate increases, but also there was only the 15% of input power.
How to design it is a kind of improve light-output efficiency LED light source be the technical problems to be solved by the invention.
Invention content
The present invention provides a kind of UV LEDs, realize the light-output efficiency for improving UV LED.
In order to solve the above technical problems, the present invention is achieved by the following scheme:
A kind of UV LED, including P-type electrode, N-type electrode, the n type semiconductor layer sequentially formed, luminous zone, P The side of type semiconductor layer and contact layer, the luminous zone is provided with for luminous zone side light extraction to be directed to positive light extraction First refractive body.
In order to further increase the reflecting effect of the first refractive body, first refractive body is complete by the side of the luminous zone Full package, and wrap up the side of at least partly n type semiconductor layer.
Preferably, first refractive body includes transmissive insulator and reflective layer, and it is exhausted that the reflective layer is located at the light transmission The outside of edge body.
Further, the thickness of transmissive insulator progressive additive on the direction of luminous zone to n type semiconductor layer;Institute Reflective layer is stated at a distance from the side of the luminous zone gradually to increase on the direction of luminous zone to n type semiconductor layer.
In order to further be conducive to light extraction, lens are provided on the light-emitting surface of the transmissive insulator.
Preferably, the n type semiconductor layer opens up fluted, and the luminous zone, p type semiconductor layer and contact layer open up There are the through-hole being sequentially communicated, the through-hole of the luminous zone to be connected to the groove, the groove forms electrode accommodating chamber with through-hole, The N-type electrode is laid in the electrode accommodating chamber, and the P-type electrode is laid in the contact layer.N-type electrode and p-type electricity The arrangement of pole can make current direction more uniform.
UV LED as described above, the N-type electrode and electrode accommodating chamber are located at two pole of the ultra-violet light-emitting The center of pipe.
UV LED as described above, the diode include that the m N-type electrode connected and at least m+1 connect The P-type electrode connect, the N-type electrode and P-type electrode are spaced apart, and the N-type electrode is located in the space of P-type electrode package.
Further, the outer surface of the N-type electrode is formed with reflective layer.Ultraviolet light can be preferably reflected, is improved outer Quantum efficiency.
Further, the N-type electrode includes cylinder and the second refractive body, and the cylinder is located at the electrode accommodating chamber Outer one end is connected with the second refractive body.Ultraviolet light can be further reflected, external quantum efficiency is improved.
Preferably, second refractive body is hemispherical, spherical arc part and the cylinder of second refractive body Connection, the surface at the position that second refractive body is not connect with the cylinder is formed with reflective layer.
It is short-circuit in order to prevent, have in the through-hole be isolated the N-type electrode and the luminous zone, p type semiconductor layer and The insulating layer of contact layer.
In order to further increase light extraction, the UV LED includes substrate, and lens are provided on the substrate.
Compared with prior art, the advantages and positive effects of the present invention are:UV LED packet provided by the invention Include P-type electrode, N-type electrode, the n type semiconductor layer sequentially formed, luminous zone, p type semiconductor layer and contact layer, wherein sending out The side in light area is provided with the first refractive body for luminous zone side light extraction to be directed to positive light extraction.Thus, first is reflective Body can increase the positive light extraction of diode, be conducive to improve external quantum efficiency, the present invention and the purple that the first refractive body is not arranged UV light-emitting diode is compared, and light-output efficiency can be improved 11%.
After the specific implementation mode of the present invention is read in conjunction with the figure, the other features and advantages of the invention will become more clear Chu.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair Some bright embodiments for those of ordinary skill in the art without having to pay creative labor, can be with Obtain other attached drawings according to these attached drawings.
Fig. 1 is the structure of emergent light surface schematic diagram of UV LED embodiment one of the present invention;
Fig. 2 be Figure 1A-A to sectional view;
Fig. 3 is the electrode arrangements schematic diagram of UV LED embodiment two of the present invention;
Fig. 4 is the B-B direction sectional view of Fig. 3;
Fig. 5 is the structural schematic diagram of the N-type electrode of UV LED embodiment two of the present invention;
Fig. 6 is the sectional view of UV LED embodiment three of the present invention;
Fig. 7 is electrode arrangements schematic diagram in UV LED example IV of the present invention.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art The every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Embodiment one
As Figure 1-Figure 2, the present embodiment UV LED, including sequentially form substrate 100, buffer layer 200, N type semiconductor layer 300, luminous zone 400, p type semiconductor layer 500 and contact layer 600.UV LED further includes p-type electricity Pole 900 and N-type electrode 700, P-type electrode 900 are distributed on contact layer 600, and N-type electrode 700 is contacted with n type semiconductor layer 300 Conducting.The side of luminous zone 400 is provided with the first refractive body for 400 side light extraction of luminous zone to be directed to positive light extraction 800.The light directing that first refractive body 800 can send out luminous zone 400 to side to UV LED positive light extraction Face forms positive light extraction from the positive light-emitting surface light extraction of light emitting diode, thus, the positive light extraction of diode is increased, favorably In raising external quantum efficiency.
Wherein, substrate 100 is the substrate of Sapphire Substrate either other transmissive ultraviolet lights, and certainly, substrate 100 also may be used With removal, for example, etching removal can be utilized or removed using laser glass technology;Buffer layer 200 can be AlN buffer layers Or InAlN buffer layers;N type semiconductor layer 300 can be N-AlGaN layers or N-AlInGaN layers;Luminous zone 400 includes multiple amounts Sub- trap and quantum are built;P type semiconductor layer 500 can be+P-GaN layers of P-AlGaN;Contact layer 600 is the materials such as Ni/Ag/Au/Al Matter.
Specifically, plane where substrate 1 in the present embodiment UV LED or with 1 place plane of substrate Parallel plane is as positive light-emitting surface.The side of luminous zone 400 is provided with for 400 side light extraction of luminous zone to be directed to just First refractive body 800 of face light extraction.The light directing that first refractive body 800 sends out luminous zone 400 to side is to ultra-violet light-emitting two The positive light-emitting surface of pole pipe forms positive light extraction, from the positive light-emitting surface light extraction of light emitting diode.
Preferably, the first refractive body 800 is fully wrapped around by the side of luminous zone 400, and wraps up at least partly N-type semiconductor The side of layer 300, to ensure that the light that luminous zone 400 is sent out to side can be reflected by the first refractive body 800, to improve first The reflecting effect of refractive body 800.
Certainly, the first refractive body 800 can also be fully wrapped around by the side of luminous zone 400 and n type semiconductor layer 300.Or Person, the first refractive body 800 can also be fully wrapped around by the side of luminous zone 400 and n type semiconductor layer 300, and wrap up at least portion Divide the side of buffer layer 200.Alternatively, the first refractive body 800 can also be by luminous zone 400, n type semiconductor layer 300 and buffer layer 200 side is fully wrapped around.Alternatively, the first refractive body 800 can also be by luminous zone 400, n type semiconductor layer 300 and buffer layer 200 side is fully wrapped around, and wraps up the side of at least partly substrate 100.Alternatively, the first refractive body 800 can also will shine Area 400, n type semiconductor layer 300, the side of buffer layer 200 and substrate 100 are fully wrapped around, at this point, the first refractive body 800 is just It is identical as the plane where substrate 100 to light-emitting surface.
First refractive body 800 includes transmissive insulator 810 and reflective layer 820.Wherein, transmissive insulator 810 is ring-type, position In the side of luminous zone 400 and the side of at least partly n type semiconductor layer 300, reflective layer 820 is located at transmissive insulator 810 Outside.Specifically, reflective layer 820 include the cyclic annular bottom wall contacted with the bottom surface of transmissive insulator 810 and with transmissive insulator 810 Lateral surface contact annular sidewall.The refractive index of transmissive insulator material 810 is conducive between semi-conducting material and air Go out the export of light, thus, transmissive insulator 810 is SiO2Or Al2O3Material, since aluminum material is to the reflective effect of ultraviolet light Fruit is preferable, and reflective layer 820 is preferably adopted and is formed from aluminium.
The thickness of transmissive insulator 810 progressive additive on luminous zone 400 to the direction of n type semiconductor layer 300;Reflective layer 820 gradually increase at a distance from the side of luminous zone 400 on luminous zone 400 to the direction of n type semiconductor layer 300.To ensure The light that luminous zone 400 is sent out to side can reflex to positive light-emitting surface by the first refractive body 800, to increase ultra-violet light-emitting two The positive light extraction of pole pipe.
In the present embodiment, positive light-emitting surface includes the top surface of the substrate 1 and transmissive insulator 810 as light-emitting surface, in order to Further be conducive to light extraction, lens 830 are provided on the top surface of the light-emitting surface as transmissive insulator 810, on substrate 100 It is provided with lens 110.Lens 110 can assemble light beam, be exported from light-emitting surface to the light beam of aggregation, so as to more It is effective to increase amount of light.
Embodiment two
As in Figure 3-5, it is based on above-described embodiment one, the present embodiment is further to the P-type electrode of UV LED 500 and the arrangement of N-type electrode 300 be improved, N-type electrode 300 is no longer at one jiao of UV LED, but by P Type electrode 500 is arranged in the periphery of N-type electrode 300, to improve the uniformity of electric current between P-type electrode 500 and N-type electrode 300, Improve luminous efficiency.
Specifically, as shown in figure 4, n type semiconductor layer 300 opens up fluted 310 in the present embodiment, luminous zone 400, p-type Semiconductor layer 500 and contact layer 600 offer the through-hole 410,510,610 being sequentially communicated.The through-hole 410 of luminous zone 400 with Groove 310 is connected to, and groove 310 forms electrode accommodating chamber with through-hole 410,510,610, and N-type electrode 700 is laid in electrode receiving Intracavitary, P-type electrode 900 are laid in contact layer 600.
Preferably, N-type electrode 700 and electrode accommodating chamber are located at the center of UV LED, p-type electricity in the present embodiment Pole 900 is laid on contact layer 600.
The outer surface of N-type electrode 300 is formed with reflective layer, and reflective layer is Al metal materials, can further be reflected ultraviolet Light improves external quantum efficiency.
Further, as shown in figure 5, the present embodiment N-type electrode 700 includes cylinder 720 and the second refractive body 730, cylinder 720 one end being located at outside electrode accommodating chamber are connected with the second refractive body 730.Second refractive body 730 can preferably reflection light, Improve external quantum efficiency.
Preferably, the second refractive body 730 is hemispherical, and spherical arc part and the cylinder 720 of the second refractive body 730 connect It connects, the surface at the position that the second refractive body 730 is not connect with main body is formed with reflective layer, and reflective layer is Al metal materials.
The present embodiment can further improve external quantum efficiency, the light-output of UV LED compared with embodiment one Efficiency can be improved 13%.
Embodiment three
As shown in fig. 6, the present embodiment is further improved on the basis of embodiment two, the tool in through-hole 410,510,610 There is the insulating layer 710 of isolating n-type electrode 700 and luminous zone 400, p type semiconductor layer 500 and contact layer 600.
Wherein, insulating layer Al2O3Or SiO2Material can effectively prevent N-type electrode 700 and luminous zone 400, p-type half Conductor layer 500 and contact layer 600 contact, and avoid the situation for generating short circuit.
Example IV
As shown in fig. 7, the difference between the present embodiment and the second embodiment lies in that, the N-type electrode 700 and P-type electrode of the present embodiment 900 arrangement mode is different from embodiment two, and P-type electrode 900 surrounds N-type electrode 700 in the present embodiment.
Specifically, the present embodiment includes m N-type electrode 700 and m+1 P-type electrode 900, N-type electrode 700 and P-type electrode 900 are spaced apart, and m N-type electrode links together, and m+1 P-type electrode 900 links together, and P-type electrode 900 is electric by N-type Pole 700 surrounds, and N-type electrode 700 is located in the space of P-type electrode package.Such set-up mode is more conducive to the uniform of electric current Property, it can further improve luminous efficiency.The light-output efficiency of the present embodiment UV LED can be improved 17%.
Finally it should be noted that:The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations;Although Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of ordinary skill in the art that:It still may be used With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features; And these modifications or replacements, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and Range.

Claims (10)

1. a kind of UV LED, which is characterized in that including P-type electrode, N-type electrode, the N-type semiconductor sequentially formed The side of layer, luminous zone, p type semiconductor layer and contact layer, the luminous zone is provided with for luminous zone side to be gone out light directing For the first refractive body of positive light extraction;The n type semiconductor layer opens up fluted, the luminous zone, p type semiconductor layer and contact Layer offers the through-hole being sequentially communicated, and the through-hole of the luminous zone is connected to the groove, and the groove forms electricity with through-hole Pole accommodating chamber, the N-type electrode are laid in the electrode accommodating chamber, and the P-type electrode is laid in the contact layer;The N Type electrode includes cylinder and the second refractive body, and the cylinder is located at one end outside the electrode accommodating chamber, and to be connected with second reflective Body;Second refractive body is hemispherical, and the spherical arc part of second refractive body is connect with the cylinder, described second The surface at the position that refractive body is not connect with the cylinder is formed with reflective layer.
2. UV LED according to claim 1, which is characterized in that first refractive body is by the luminous zone Side it is fully wrapped around, and wrap up the side of at least partly n type semiconductor layer.
3. UV LED according to claim 2, which is characterized in that first refractive body includes light transmission insulation Body and reflective layer, the reflective layer are located at the outside of the transmissive insulator.
4. UV LED according to claim 3, which is characterized in that the thickness of the transmissive insulator is shining Progressive additive in area to the direction of n type semiconductor layer;The reflective layer is at a distance from the side of the luminous zone in luminous zone to N Gradually increase on the direction of type semiconductor layer.
5. UV LED according to claim 3, which is characterized in that set on the light-emitting surface of the transmissive insulator It is equipped with lens.
6. UV LED according to claim 1, which is characterized in that the N-type electrode and electrode accommodating chamber position In the center of the UV LED.
7. UV LED according to claim 1, which is characterized in that the diode includes the N-type of m connection The P-type electrode of electrode and at least m+1 connection, the N-type electrode and P-type electrode are spaced apart, and the N-type electrode is located at p-type In the space of electrode package.
8. UV LED according to claim 1, which is characterized in that the outer surface of the N-type electrode is formed with Reflective layer.
9. UV LED according to claim 1, which is characterized in that have in the through-hole and the N-type is isolated Electrode and the luminous zone, the insulating layer of p type semiconductor layer and contact layer.
10. UV LED according to claim 1, which is characterized in that the UV LED includes lining Bottom is provided with lens on the substrate.
CN201610306804.3A 2016-05-11 2016-05-11 A kind of UV LED Expired - Fee Related CN105977353B (en)

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WO2021046685A1 (en) * 2019-09-09 2021-03-18 重庆康佳光电技术研究院有限公司 Led chip, led, array and led encapsulation method

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CN1825643A (en) * 2006-01-24 2006-08-30 北京工业大学 LED with high light extracting efficiency and preparing method thereof
KR20090090812A (en) * 2008-02-22 2009-08-26 한국산업기술대학교산학협력단 Vertically structured gan type led device with sidewall reflector and manufacturing method thereof
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