CN105977353B - A kind of UV LED - Google Patents
A kind of UV LED Download PDFInfo
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- CN105977353B CN105977353B CN201610306804.3A CN201610306804A CN105977353B CN 105977353 B CN105977353 B CN 105977353B CN 201610306804 A CN201610306804 A CN 201610306804A CN 105977353 B CN105977353 B CN 105977353B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 238000000605 extraction Methods 0.000 claims abstract description 23
- 239000012212 insulator Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 230000000750 progressive effect Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 210000001124 body fluid Anatomy 0.000 description 1
- 239000010839 body fluid Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000087 laser glass Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of UV LEDs, including P-type electrode, N-type electrode, the n type semiconductor layer sequentially formed, luminous zone, p type semiconductor layer and contact layer, the side of the luminous zone is provided with the first refractive body for luminous zone side light extraction to be directed to positive light extraction.Thus, the first refractive body can increase the positive light extraction of diode, improve the light-output efficiency of UV LED.
Description
Technical field
The present invention relates to semiconductor photoelectric device technical field more particularly to a kind of UV LEDs.
Background technology
With the development that LED is applied, because its spectral region is wider, (emission wavelength can cover 210-400nm to ultraviolet LED
Wave band), it is more energy efficient and be free of noxious material mercury and widely answered with the incomparable advantage of other traditional UV sources
For many aspects in life, such as ultraviolet disinfection, UV cured, optical sensor, ultraviolet light authentication, body fluid inspection
The fields such as survey and analysis.Currently, the technical bottleneck of ultraviolet LED is mainly that luminous efficiency is relatively low.For wavelength less than 365nm's
The output power of chip, ultraviolet LED is only the 5%-8% of input power；When wavelength is 385nm or more, the effect of purple LED
Rate increases, but also there was only the 15% of input power.
How to design it is a kind of improve light-output efficiency LED light source be the technical problems to be solved by the invention.
Invention content
The present invention provides a kind of UV LEDs, realize the light-output efficiency for improving UV LED.
In order to solve the above technical problems, the present invention is achieved by the following scheme：
A kind of UV LED, including P-type electrode, N-type electrode, the n type semiconductor layer sequentially formed, luminous zone, P
The side of type semiconductor layer and contact layer, the luminous zone is provided with for luminous zone side light extraction to be directed to positive light extraction
First refractive body.
In order to further increase the reflecting effect of the first refractive body, first refractive body is complete by the side of the luminous zone
Full package, and wrap up the side of at least partly n type semiconductor layer.
Preferably, first refractive body includes transmissive insulator and reflective layer, and it is exhausted that the reflective layer is located at the light transmission
The outside of edge body.
Further, the thickness of transmissive insulator progressive additive on the direction of luminous zone to n type semiconductor layer；Institute
Reflective layer is stated at a distance from the side of the luminous zone gradually to increase on the direction of luminous zone to n type semiconductor layer.
In order to further be conducive to light extraction, lens are provided on the light-emitting surface of the transmissive insulator.
Preferably, the n type semiconductor layer opens up fluted, and the luminous zone, p type semiconductor layer and contact layer open up
There are the through-hole being sequentially communicated, the through-hole of the luminous zone to be connected to the groove, the groove forms electrode accommodating chamber with through-hole,
The N-type electrode is laid in the electrode accommodating chamber, and the P-type electrode is laid in the contact layer.N-type electrode and p-type electricity
The arrangement of pole can make current direction more uniform.
UV LED as described above, the N-type electrode and electrode accommodating chamber are located at two pole of the ultra-violet light-emitting
The center of pipe.
UV LED as described above, the diode include that the m N-type electrode connected and at least m+1 connect
The P-type electrode connect, the N-type electrode and P-type electrode are spaced apart, and the N-type electrode is located in the space of P-type electrode package.
Further, the outer surface of the N-type electrode is formed with reflective layer.Ultraviolet light can be preferably reflected, is improved outer
Quantum efficiency.
Further, the N-type electrode includes cylinder and the second refractive body, and the cylinder is located at the electrode accommodating chamber
Outer one end is connected with the second refractive body.Ultraviolet light can be further reflected, external quantum efficiency is improved.
Preferably, second refractive body is hemispherical, spherical arc part and the cylinder of second refractive body
Connection, the surface at the position that second refractive body is not connect with the cylinder is formed with reflective layer.
It is short-circuit in order to prevent, have in the through-hole be isolated the N-type electrode and the luminous zone, p type semiconductor layer and
The insulating layer of contact layer.
In order to further increase light extraction, the UV LED includes substrate, and lens are provided on the substrate.
Compared with prior art, the advantages and positive effects of the present invention are：UV LED packet provided by the invention
Include P-type electrode, N-type electrode, the n type semiconductor layer sequentially formed, luminous zone, p type semiconductor layer and contact layer, wherein sending out
The side in light area is provided with the first refractive body for luminous zone side light extraction to be directed to positive light extraction.Thus, first is reflective
Body can increase the positive light extraction of diode, be conducive to improve external quantum efficiency, the present invention and the purple that the first refractive body is not arranged
UV light-emitting diode is compared, and light-output efficiency can be improved 11%.
After the specific implementation mode of the present invention is read in conjunction with the figure, the other features and advantages of the invention will become more clear
Chu.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Some bright embodiments for those of ordinary skill in the art without having to pay creative labor, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is the structure of emergent light surface schematic diagram of UV LED embodiment one of the present invention；
Fig. 2 be Figure 1A-A to sectional view；
Fig. 3 is the electrode arrangements schematic diagram of UV LED embodiment two of the present invention；
Fig. 4 is the B-B direction sectional view of Fig. 3；
Fig. 5 is the structural schematic diagram of the N-type electrode of UV LED embodiment two of the present invention；
Fig. 6 is the sectional view of UV LED embodiment three of the present invention；
Fig. 7 is electrode arrangements schematic diagram in UV LED example IV of the present invention.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Embodiment one
As Figure 1-Figure 2, the present embodiment UV LED, including sequentially form substrate 100, buffer layer 200,
N type semiconductor layer 300, luminous zone 400, p type semiconductor layer 500 and contact layer 600.UV LED further includes p-type electricity
Pole 900 and N-type electrode 700, P-type electrode 900 are distributed on contact layer 600, and N-type electrode 700 is contacted with n type semiconductor layer 300
Conducting.The side of luminous zone 400 is provided with the first refractive body for 400 side light extraction of luminous zone to be directed to positive light extraction
800.The light directing that first refractive body 800 can send out luminous zone 400 to side to UV LED positive light extraction
Face forms positive light extraction from the positive light-emitting surface light extraction of light emitting diode, thus, the positive light extraction of diode is increased, favorably
In raising external quantum efficiency.
Wherein, substrate 100 is the substrate of Sapphire Substrate either other transmissive ultraviolet lights, and certainly, substrate 100 also may be used
With removal, for example, etching removal can be utilized or removed using laser glass technology；Buffer layer 200 can be AlN buffer layers
Or InAlN buffer layers；N type semiconductor layer 300 can be N-AlGaN layers or N-AlInGaN layers；Luminous zone 400 includes multiple amounts
Sub- trap and quantum are built；P type semiconductor layer 500 can be+P-GaN layers of P-AlGaN；Contact layer 600 is the materials such as Ni/Ag/Au/Al
Matter.
Specifically, plane where substrate 1 in the present embodiment UV LED or with 1 place plane of substrate
Parallel plane is as positive light-emitting surface.The side of luminous zone 400 is provided with for 400 side light extraction of luminous zone to be directed to just
First refractive body 800 of face light extraction.The light directing that first refractive body 800 sends out luminous zone 400 to side is to ultra-violet light-emitting two
The positive light-emitting surface of pole pipe forms positive light extraction, from the positive light-emitting surface light extraction of light emitting diode.
Preferably, the first refractive body 800 is fully wrapped around by the side of luminous zone 400, and wraps up at least partly N-type semiconductor
The side of layer 300, to ensure that the light that luminous zone 400 is sent out to side can be reflected by the first refractive body 800, to improve first
The reflecting effect of refractive body 800.
Certainly, the first refractive body 800 can also be fully wrapped around by the side of luminous zone 400 and n type semiconductor layer 300.Or
Person, the first refractive body 800 can also be fully wrapped around by the side of luminous zone 400 and n type semiconductor layer 300, and wrap up at least portion
Divide the side of buffer layer 200.Alternatively, the first refractive body 800 can also be by luminous zone 400, n type semiconductor layer 300 and buffer layer
200 side is fully wrapped around.Alternatively, the first refractive body 800 can also be by luminous zone 400, n type semiconductor layer 300 and buffer layer
200 side is fully wrapped around, and wraps up the side of at least partly substrate 100.Alternatively, the first refractive body 800 can also will shine
Area 400, n type semiconductor layer 300, the side of buffer layer 200 and substrate 100 are fully wrapped around, at this point, the first refractive body 800 is just
It is identical as the plane where substrate 100 to light-emitting surface.
First refractive body 800 includes transmissive insulator 810 and reflective layer 820.Wherein, transmissive insulator 810 is ring-type, position
In the side of luminous zone 400 and the side of at least partly n type semiconductor layer 300, reflective layer 820 is located at transmissive insulator 810
Outside.Specifically, reflective layer 820 include the cyclic annular bottom wall contacted with the bottom surface of transmissive insulator 810 and with transmissive insulator 810
Lateral surface contact annular sidewall.The refractive index of transmissive insulator material 810 is conducive between semi-conducting material and air
Go out the export of light, thus, transmissive insulator 810 is SiO2Or Al2O3Material, since aluminum material is to the reflective effect of ultraviolet light
Fruit is preferable, and reflective layer 820 is preferably adopted and is formed from aluminium.
The thickness of transmissive insulator 810 progressive additive on luminous zone 400 to the direction of n type semiconductor layer 300；Reflective layer
820 gradually increase at a distance from the side of luminous zone 400 on luminous zone 400 to the direction of n type semiconductor layer 300.To ensure
The light that luminous zone 400 is sent out to side can reflex to positive light-emitting surface by the first refractive body 800, to increase ultra-violet light-emitting two
The positive light extraction of pole pipe.
In the present embodiment, positive light-emitting surface includes the top surface of the substrate 1 and transmissive insulator 810 as light-emitting surface, in order to
Further be conducive to light extraction, lens 830 are provided on the top surface of the light-emitting surface as transmissive insulator 810, on substrate 100
It is provided with lens 110.Lens 110 can assemble light beam, be exported from light-emitting surface to the light beam of aggregation, so as to more
It is effective to increase amount of light.
Embodiment two
As in Figure 3-5, it is based on above-described embodiment one, the present embodiment is further to the P-type electrode of UV LED
500 and the arrangement of N-type electrode 300 be improved, N-type electrode 300 is no longer at one jiao of UV LED, but by P
Type electrode 500 is arranged in the periphery of N-type electrode 300, to improve the uniformity of electric current between P-type electrode 500 and N-type electrode 300,
Improve luminous efficiency.
Specifically, as shown in figure 4, n type semiconductor layer 300 opens up fluted 310 in the present embodiment, luminous zone 400, p-type
Semiconductor layer 500 and contact layer 600 offer the through-hole 410,510,610 being sequentially communicated.The through-hole 410 of luminous zone 400 with
Groove 310 is connected to, and groove 310 forms electrode accommodating chamber with through-hole 410,510,610, and N-type electrode 700 is laid in electrode receiving
Intracavitary, P-type electrode 900 are laid in contact layer 600.
Preferably, N-type electrode 700 and electrode accommodating chamber are located at the center of UV LED, p-type electricity in the present embodiment
Pole 900 is laid on contact layer 600.
The outer surface of N-type electrode 300 is formed with reflective layer, and reflective layer is Al metal materials, can further be reflected ultraviolet
Light improves external quantum efficiency.
Further, as shown in figure 5, the present embodiment N-type electrode 700 includes cylinder 720 and the second refractive body 730, cylinder
720 one end being located at outside electrode accommodating chamber are connected with the second refractive body 730.Second refractive body 730 can preferably reflection light,
Improve external quantum efficiency.
Preferably, the second refractive body 730 is hemispherical, and spherical arc part and the cylinder 720 of the second refractive body 730 connect
It connects, the surface at the position that the second refractive body 730 is not connect with main body is formed with reflective layer, and reflective layer is Al metal materials.
The present embodiment can further improve external quantum efficiency, the light-output of UV LED compared with embodiment one
Efficiency can be improved 13%.
Embodiment three
As shown in fig. 6, the present embodiment is further improved on the basis of embodiment two, the tool in through-hole 410,510,610
There is the insulating layer 710 of isolating n-type electrode 700 and luminous zone 400, p type semiconductor layer 500 and contact layer 600.
Wherein, insulating layer Al2O3Or SiO2Material can effectively prevent N-type electrode 700 and luminous zone 400, p-type half
Conductor layer 500 and contact layer 600 contact, and avoid the situation for generating short circuit.
Example IV
As shown in fig. 7, the difference between the present embodiment and the second embodiment lies in that, the N-type electrode 700 and P-type electrode of the present embodiment
900 arrangement mode is different from embodiment two, and P-type electrode 900 surrounds N-type electrode 700 in the present embodiment.
Specifically, the present embodiment includes m N-type electrode 700 and m+1 P-type electrode 900, N-type electrode 700 and P-type electrode
900 are spaced apart, and m N-type electrode links together, and m+1 P-type electrode 900 links together, and P-type electrode 900 is electric by N-type
Pole 700 surrounds, and N-type electrode 700 is located in the space of P-type electrode package.Such set-up mode is more conducive to the uniform of electric current
Property, it can further improve luminous efficiency.The light-output efficiency of the present embodiment UV LED can be improved 17%.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of ordinary skill in the art that：It still may be used
With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features；
And these modifications or replacements, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of UV LED, which is characterized in that including P-type electrode, N-type electrode, the N-type semiconductor sequentially formed
The side of layer, luminous zone, p type semiconductor layer and contact layer, the luminous zone is provided with for luminous zone side to be gone out light directing
For the first refractive body of positive light extraction;The n type semiconductor layer opens up fluted, the luminous zone, p type semiconductor layer and contact
Layer offers the through-hole being sequentially communicated, and the through-hole of the luminous zone is connected to the groove, and the groove forms electricity with through-hole
Pole accommodating chamber, the N-type electrode are laid in the electrode accommodating chamber, and the P-type electrode is laid in the contact layer;The N
Type electrode includes cylinder and the second refractive body, and the cylinder is located at one end outside the electrode accommodating chamber, and to be connected with second reflective
Body;Second refractive body is hemispherical, and the spherical arc part of second refractive body is connect with the cylinder, described second
The surface at the position that refractive body is not connect with the cylinder is formed with reflective layer.
2. UV LED according to claim 1, which is characterized in that first refractive body is by the luminous zone
Side it is fully wrapped around, and wrap up the side of at least partly n type semiconductor layer.
3. UV LED according to claim 2, which is characterized in that first refractive body includes light transmission insulation
Body and reflective layer, the reflective layer are located at the outside of the transmissive insulator.
4. UV LED according to claim 3, which is characterized in that the thickness of the transmissive insulator is shining
Progressive additive in area to the direction of n type semiconductor layer；The reflective layer is at a distance from the side of the luminous zone in luminous zone to N
Gradually increase on the direction of type semiconductor layer.
5. UV LED according to claim 3, which is characterized in that set on the light-emitting surface of the transmissive insulator
It is equipped with lens.
6. UV LED according to claim 1, which is characterized in that the N-type electrode and electrode accommodating chamber position
In the center of the UV LED.
7. UV LED according to claim 1, which is characterized in that the diode includes the N-type of m connection
The P-type electrode of electrode and at least m+1 connection, the N-type electrode and P-type electrode are spaced apart, and the N-type electrode is located at p-type
In the space of electrode package.
8. UV LED according to claim 1, which is characterized in that the outer surface of the N-type electrode is formed with
Reflective layer.
9. UV LED according to claim 1, which is characterized in that have in the through-hole and the N-type is isolated
Electrode and the luminous zone, the insulating layer of p type semiconductor layer and contact layer.
10. UV LED according to claim 1, which is characterized in that the UV LED includes lining
Bottom is provided with lens on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610306804.3A CN105977353B (en) | 2016-05-11 | 2016-05-11 | A kind of UV LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610306804.3A CN105977353B (en) | 2016-05-11 | 2016-05-11 | A kind of UV LED |
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| Publication Number | Publication Date |
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| CN105977353A CN105977353A (en) | 2016-09-28 |
| CN105977353B true CN105977353B (en) | 2018-11-09 |
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| CN201610306804.3A Expired - Fee Related CN105977353B (en) | 2016-05-11 | 2016-05-11 | A kind of UV LED |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021046685A1 (en) * | 2019-09-09 | 2021-03-18 | 重庆康佳光电技术研究院有限公司 | Led chip, led, array and led encapsulation method |
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| CN105977353A (en) | 2016-09-28 |
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