CN102651437A - Light emitting diode structure - Google Patents
Light emitting diode structure Download PDFInfo
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- CN102651437A CN102651437A CN201210018435XA CN201210018435A CN102651437A CN 102651437 A CN102651437 A CN 102651437A CN 201210018435X A CN201210018435X A CN 201210018435XA CN 201210018435 A CN201210018435 A CN 201210018435A CN 102651437 A CN102651437 A CN 102651437A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims description 74
- 230000004888 barrier function Effects 0.000 claims description 69
- 238000010276 construction Methods 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention relates to a light-emitting diode structure, which is sequentially provided with a substrate, an epitaxial layer and a transparent conducting layer, wherein the epitaxial layer is arranged above the substrate, the transparent conducting layer is arranged above the epitaxial layer, a current blocking layer is arranged in the epitaxial layer and is positioned below the transparent conducting layer and above the substrate, a first metal electrode is arranged above the epitaxial layer, a second metal electrode is arranged above the transparent conducting layer, and the current blocking layer is positioned below the second metal electrode. The current blocking layer prevents the light emitting line of the epitaxial layer below the second metal electrode from being absorbed, and the light emitting efficiency of the light emitting diode structure is further improved.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, be meant a kind of light emitting diode construction that increases luminous efficiency especially.
Background technology
Lighting apparatus is indispensable among the human lives, along with the development of technology, have better illumination and more the illuminations of power saving also arise at the historic moment gradually.The lighting source that the most often uses at present is light-emitting diode.Light-emitting diode (Light-Emitting Diode; LED) compare with conventional light source; Light-emitting diode be have that volume is little, power saving, luminous efficiency is good, the life-span is long, operant response speed fast and the advantages such as pollution of noxious substances such as non-thermal radiation and mercury; Therefore in recent years, the application surface of light-emitting diode is to the utmost to be extensive.Past be because the brightness of light-emitting diode also can't replace traditional lighting source, but along with the continuous lifting of technical field, developed the light-emitting diode (high-capacity LED) of high illumination briliancy at present, and it is enough to replace traditional lighting source.
See also Fig. 1, it is the light-emitting diode structure sketch map of prior art; As shown in the figure; Existing light-emitting diode comprises a substrate 10; One first semiconductor layer 12, an active layers 14, one second semiconductor layer 16 and a conductive layer 18, the first semiconductor layers 12 are located at substrate 10 tops, and active layers 14 is located at first semiconductor layer, 12 tops; Second semiconductor layer 16 is located at active layers 14 tops, and conductive layer 18 is located at second semiconductor layer, 16 tops.Prior art more comprises one first metal electrode 22 and one second metal electrode 24; First metal electrode 22 is that first semiconductor layer 12 with the n type forms ohmic contact; To be connected to the negative pole of external power source; 24 conductive layers 18 with second semiconductor layer, 16 tops of p type of second metal electrode are connected, and second metal electrode 24 is connected to the positive pole of external power source.
When first metal electrode 22 and 24 energisings of second metal electrode; First semiconductor layer 12 makes electronics combine with electric hole with second semiconductor layer 16; And the energy that these electronics combine with electric hole sends through this transparency conducting layer 18 with the form of light; And active layers 14 is to have multiple quantum trap (MQW), can promote electronics to increase luminous efficiency with combining of electric hole.Yet second metal electrode 24 is not the material of printing opacity, thus second metal electrode 24 with absorption portion light, the luminous efficiency that can influence light-emitting diode like this.And in order to improve the luminous efficiency of light-emitting diode; So prior art more is provided with an electric current barrier layer 32; Electric current barrier layer 32 between the conductive layer 18 and second semiconductor layer 16, in order to cover second semiconductor layer 16 be positioned at second metal electrode 24 under the electric current that passed through, let second semiconductor layer, 16 other position institute galvanizations increase; Like this then can make second metal electrode 24 under luminous efficiency reduce, and promote the luminous efficiency of other positions.Yet, though electric current barrier layer 32 reduced by second semiconductor layer 16 be positioned at second metal electrode 24 under the electric current that passed through, active layers 14 issued light lines also can be stopped or absorb by electric current barrier layer 32.
Therefore, the present invention provides a kind of light emitting diode construction, and it is the luminous efficiency that can improve light-emitting diode, to solve the above problems.
Summary of the invention
Main purpose of the present invention; Be to provide a kind of light emitting diode construction, it is that an electric current barrier layer is set in epitaxial layer, and the electric current barrier layer is between transparency conducting layer and substrate; Make the electric current barrier layer be positioned at metal electrode below; Be filled in metal electrode below through the electric current barrier layer,, so can increase the luminous efficiency of light emitting diode construction to avoid epitaxial layer issued light line by by metal electrode or the electric current barrier layer absorbs.
Secondary objective of the present invention; Be to provide a kind of light emitting diode construction; More comprise a reflecting element, reflecting element so can avoid the electric current barrier layer to absorb epitaxial layer issued light line to intercept epitaxial layer; And can epitaxial layer be emitted to the light reflection of electric current barrier layer, to increase the luminous efficiency of light-emitting diode.
Technical scheme of the present invention is: a kind of light emitting diode construction comprises:
One substrate;
One epitaxial layer is located at this substrate top;
One transparency conducting layer is located at this epitaxial layer top; And
One electric current barrier layer is located in this epitaxial layer and is positioned at the top of this transparency conducting layer below and this substrate;
Wherein, this epitaxial layer top is provided with one first metal electrode, and this transparency conducting layer top is provided with one second metal electrode, and this electric current barrier layer is positioned at the below with this second metal electrode.
Among the present invention, wherein this epitaxial layer comprises:
One first semiconductor belongs to is located at this substrate top, and this first metal electrode is located at this first semiconductor layer;
One active layers is located at this first semiconductor layer top and adjacent with this first metal electrode; And
One second semiconductor layer is located at this active layers top.
Among the present invention, wherein the bottom of this current blocked layer is to be arranged on this first semiconductor layer, and adjacent this active layers and this second semiconductor layer.
Among the present invention, wherein the bottom of this current blocked layer is to be arranged on this first semiconductor layer, and adjacent this first semiconductor layer of a side of this current blocked layer, this active layers and this second semiconductor layer.
Among the present invention, wherein the bottom of this current blocked layer is to be arranged on this substrate, and adjacent this epitaxial layer.
Among the present invention, more comprise a reflecting element, this reflecting element is located at least one side of this electric current barrier layer.
Among the present invention, wherein this reflecting element be provided with this electric current barrier layer around.
Among the present invention, wherein this current blocked layer is the size setting with respect to this second metal electrode.
Among the present invention, wherein the material of this electric current barrier layer is to be selected from one of them of silicon dioxide, titanium dioxide, alundum (Al, tantalum pentoxide, five oxidation Tritanium/Trititaniums and above-mentioned group of combination in any.
The beneficial effect that the present invention has: light emitting diode construction of the present invention; Comprise a substrate, an epitaxial layer, a transparency conducting layer and an electric current barrier layer, epitaxial layer is located at the substrate top, and transparency conducting layer is located at the epitaxial layer top; The electric current barrier layer is located in the epitaxial layer and is positioned at the top of transparency conducting layer below and substrate; The epitaxial layer top is provided with one first metal electrode, and the transparency conducting layer top is provided with one second metal electrode, and the electric current barrier layer is positioned at the below with second metal electrode.Be filled in metal electrode below through the electric current barrier layer,, so can increase the luminous efficiency of light emitting diode construction to avoid epitaxial layer issued light line by by metal electrode or the electric current barrier layer absorbs.
In addition, the present invention more comprises a reflecting element, and reflecting element is located at least one side of electric current barrier layer and is intercepted epitaxial layer.So can avoid the electric current barrier layer to absorb epitaxial layer issued light line, and can epitaxial layer be emitted to the light reflection of electric current barrier layer, to increase the luminous efficiency of light-emitting diode.
Description of drawings
Fig. 1 is the light-emitting diode structure sketch map of prior art;
Fig. 2 is the structural representation of the light emitting diode construction of preferred embodiment of the present invention;
Fig. 3 A is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention;
Fig. 3 B is the structural representation of the reflecting element of another preferred embodiment of the present invention;
Fig. 4 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention;
Fig. 5 A is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention;
Fig. 5 B is the structural representation of the reflecting element of another preferred embodiment of the present invention;
Fig. 6 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention;
Fig. 7 A is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; And
Fig. 7 B is the structural representation of the reflecting element of another preferred embodiment of the present invention.
[figure number is to as directed]
10 substrates, 12 first semiconductor layers
14 active layers, 16 second semiconductor layers
18 conductive layers, 22 first metal electrodes
24 second metal electrodes, 32 electric current barrier layers
40 substrates, 50 epitaxial layers
52 first semiconductor layers, 54 active layers
56 second semiconductor layers, 60 first metal electrodes
70 transparency conducting layers, 80 second metal electrodes
90 electric current barrier layers, 100 reflecting elements
Embodiment
For making architectural feature of the present invention and the effect reached there are further understanding and understanding, cooperate detailed explanation, explain as follows in order to preferred embodiment and accompanying drawing:
See also Fig. 2, it is the structural representation of the light emitting diode construction of preferred embodiment of the present invention; As shown in the figure; Light emitting diode construction of the present invention; Comprise a substrate 40, an epitaxial layer 50, a transparency conducting layer 70 and an electric current barrier layer 90, epitaxial layer 50 is located at substrate 40 tops, and transparency conducting layer 70 is located at epitaxial layer 50 tops; Electric current barrier layer 90 is located in the epitaxial layer and is positioned at the top of transparency conducting layer 70 belows and substrate 40; Epitaxial layer 50 tops are provided with one first metal electrode 60, and transparency conducting layer 70 tops are provided with one second metal electrode 80, and electric current barrier layer 90 is positioned at the below with second metal electrode 80.Epitaxial layer 50 comprises one first semiconductor layer 52, an active layers 54 and one second semiconductor layer 56; First semiconductor layer 52 is located at substrate 40 tops; First metal electrode 60 is located at first semiconductor layer 52, and active layers 54 is located at first semiconductor layer, 52 tops and adjacent with first metal electrode 60, and second semiconductor layer 56 is located at active layers 54 tops; And the bottom of current blocked layer 90 is to be arranged on first semiconductor layer 52, and the adjacent active layers 54 and second semiconductor layer 56.Intercepting the active layers 54 of second metal electrode, 80 belows, reducing active layers 54 issued light lines by metal electrode or electric current barrier layer 90 absorbs, and then increase the luminous efficiency of light emitting diode construction through electric current barrier layer 90.
The material of transparency conducting layer 70 is to be selected from the glutinous agent of nickel/gold, tin indium oxide, cadmium tin, antimony tin, electrically conducting transparent, zinc oxide, zinc oxide to be and one of them of above-mentioned group of combination in any.Transparency conducting layer 70 is an example with the tin indium oxide, and tin indium oxide has characteristic transparent and conduction, therefore is suitable as between second metal electrode 80 and second semiconductor layer 56 to be connected.Transparency conducting layer 70 evenly distributes in order to the electric current with the outside supply, with the energy consumption of avoiding current concentration to produce.First metal electrode 60 is and n type first semiconductor layer 52 forms ohmic contact, as the contact layer of n type being connected to a negative pole of external power source, second metal electrode 80 connect with p type second semiconductor layer 56 and with a positive pole that connects external power source.
The material of electric current barrier layer 90 is to be selected from one of them of silicon dioxide, titanium dioxide, alundum (Al, tantalum pentoxide, five oxidation Tritanium/Trititaniums and above-mentioned group of combination in any.
The present invention combines with second semiconductor layer 56 through first semiconductor layer 52, make electronics electricity hole between n N-type semiconductor N compound layer and the p N-type semiconductor N compound layer right combine and luminous, and through active layers 54 to increase luminous efficiency.Current blocked layer 90 is the size settings with respect to second metal electrode 80.And when light emitting diode construction of the present invention is luminous; Through electric current barrier layer 90 to intercept the active layers 54 of second metal electrode, 80 belows; Reducing active layers 54 issued light lines by second metal electrode 80 or electric current barrier layer 90 absorbs, and then increase the luminous efficiency of light emitting diode construction.
See also Fig. 3 A, it is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure, the embodiment that the enforcement of Fig. 3 A is different from Fig. 2 is that this embodiment more comprises a reflecting element 100.Reflecting element 100 is located at least one side of electric current barrier layer 90 and is intercepted active layers 54 and second semiconductor layer 56.So can avoid electric current barrier layer 90 to absorb active layers 54 issued light lines, with light reflection, to increase the luminous efficiency of light-emitting diode with the active layers 54 electric current barrier layer 90 that is emitted to.
See also Fig. 3 B, it is the structural representation of the reflecting element 100 of another preferred embodiment of the present invention; As shown in the figure, the embodiment that the embodiment here is different from Fig. 3 A is the difference of reflecting element 100.The reflecting element 100 of Fig. 3 A is between electric current barrier layer 90 and the active layers 54 or second semiconductor layer 56; And the reflecting element 100 of this embodiment is except between electric current barrier layer 90 and the active layers 54 or second semiconductor layer 56, the reflecting element 100 of this embodiment more be arranged at whole electric current barrier layer 90 around.So can avoid electric current barrier layer 90 to absorb active layers 54 issued light lines, with light reflection, to increase the luminous efficiency of light-emitting diode with the active layers 54 electric current barrier layer 90 that is emitted to.
See also Fig. 4, it is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure, the embodiment that this embodiment is different from map Fig. 2 is that the set-up mode of electric current barrier layer 90 is different.The bottom of the electric current barrier layer 90 of Fig. 2 is tops of being located at first semiconductor layer 52; The electric current barrier layer 90 of this embodiment is not only except wearing the active layers 54 and second semiconductor layer 56; And be positioned at transparency conducting layer 70 belows and with second metal electrode 80 relatively outside; The electric current barrier layer 90 of this embodiment is to extend and be embedded in first semiconductor layer 52, makes adjacent first semiconductor layer 52 of a side of current blocked layer 90, active layers 54 and second semiconductor layer 56.So more can avoid electric current barrier layer 90 to absorb active layers 54 issued light lines, with light reflection, to increase the luminous efficiency of light-emitting diode with the active layers 54 electric current barrier layer 90 that is emitted to.See also Fig. 5 A, it is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure, this embodiment is different from Fig. 4 embodiment and is that this embodiment more comprises reflecting element 100, through reflecting element 100 light that 54 of active layers are emitted to electric current barrier layer 90 is reflected, to increase the luminous efficiency of light-emitting diode.And the mode that reflecting element 100 is provided with is identical with Fig. 3 A.
See also Fig. 5 B, it is the structural representation of the reflecting element of another preferred embodiment of the present invention; As shown in the figure, the embodiment that this embodiment is different from Fig. 5 A is the difference of reflecting element 100.The reflecting element 100 of this enforcement is the same with Fig. 3 B, all with the mode that is provided be provided with reflecting element 100 around, through reflecting element 100 54 of active layers are emitted to the light reflection of electric current barrier layer 90, to increase the luminous efficiency of light-emitting diode.
Please consult Fig. 6, Fig. 7 A and Fig. 7 B in the lump, the structural representation of the reflecting element that sketch map and another preferred embodiment are set 100 of the reflecting element 100 of its structural representation, another preferred embodiment for the light emitting diode construction of another preferred embodiment of the present invention; Electric current barrier layer 90 of the present invention more can be arranged on the substrate 40 bottom of current blocked layer 90 to extending below setting, and adjacent epitaxial layer 50.And wear first semiconductor layer 52, and for example shown in Figure 6.And the embodiment of Fig. 6 also can be provided with reflecting element 100, just as Fig. 7 A.And reflecting element 100 also can be provided with electric current barrier layer 90 around, Fig. 7 B and for example.Through the active layers 54 of electric current barrier layer 90 with barrier metal electrode below; Absorbed by electric current barrier layer 90 to reduce active layers 54 issued light lines; And then the luminous efficiency of increase light emitting diode construction; And 54 of active layers are emitted to the light reflection of electric current barrier layer 90 through reflecting element 100, more increase the luminous efficiency of light-emitting diode.
In sum; The invention relates to a kind of light emitting diode construction; It is provided with a substrate, one first semiconductor layer, an active layers, one second semiconductor layer, a transparency conducting layer in regular turn, and one first metal electrode is located at first semiconductor layer top and adjacent with active layers, and one second metal electrode is located at the transparency conducting layer top; One electric current barrier layer is located at first semiconductor layer top and is worn the active layers and second semiconductor layer, and the electric current barrier layer is positioned at the transparency conducting layer below.Through the electric current barrier layer with the active layers issued light line of barrier metal electrode below by metal electrode or the electric current barrier layer absorbs, and then increase the luminous efficiency of light emitting diode construction.In addition, the present invention more comprises a reflecting element, and reflecting element is located at the electric current barrier layer and is intercepted active layers and second semiconductor layer.So can avoid the electric current barrier layer to absorb active layers issued light line, and can active layers be emitted to the light reflection of electric current barrier layer, to increase the luminous efficiency of light-emitting diode.
In sum; Be merely preferred embodiment of the present invention; Be not to be used for limiting the scope that the present invention implements, all equalizations of doing according to the described shape of claim scope of the present invention, structure, characteristic and spirit change and modify, and all should be included in the claim scope of the present invention.
Claims (9)
1. a light emitting diode construction is characterized in that, comprises:
One substrate;
One epitaxial layer is located at this substrate top;
One transparency conducting layer is located at this epitaxial layer top; And
One electric current barrier layer is located in this epitaxial layer and is positioned at the top of this transparency conducting layer below and this substrate;
Wherein, this epitaxial layer top is provided with one first metal electrode, and this transparency conducting layer top is provided with one second metal electrode, and this electric current barrier layer is positioned at the below with this second metal electrode.
2. light emitting diode construction as claimed in claim 1 is characterized in that, wherein this epitaxial layer comprises:
One first semiconductor layer is located at this substrate top, and this first metal electrode is located at this first semiconductor layer;
One active layers is located at this first semiconductor layer top and adjacent with this first metal electrode; And
One second semiconductor layer is located at this active layers top.
3. according to claim 1 or claim 2 light emitting diode construction is characterized in that wherein the bottom of this current blocked layer is to be arranged on this first semiconductor layer, and adjacent this active layers and this second semiconductor layer.
4. according to claim 1 or claim 2 light emitting diode construction; It is characterized in that; Wherein the bottom of this current blocked layer is to be arranged on this first semiconductor layer, and adjacent this first semiconductor layer of a side of this current blocked layer, this active layers and this second semiconductor layer.
5. light emitting diode construction as claimed in claim 1 is characterized in that, wherein the bottom of this current blocked layer is to be arranged on this substrate, and adjacent this epitaxial layer.
6. light emitting diode construction as claimed in claim 1 is characterized in that, more comprises a reflecting element, and this reflecting element is located at least one side of this electric current barrier layer.
7. light emitting diode construction as claimed in claim 6 is characterized in that, wherein this reflecting element be provided with this electric current barrier layer around.
8. light emitting diode construction as claimed in claim 1 is characterized in that, wherein this current blocked layer is the size setting with respect to this second metal electrode.
9. light emitting diode construction as claimed in claim 1 is characterized in that, wherein the material of this electric current barrier layer is to be selected from one of them of silicon dioxide, titanium dioxide, alundum (Al, tantalum pentoxide, five oxidation Tritanium/Trititaniums and above-mentioned group of combination in any.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100106100A TW201236197A (en) | 2011-02-23 | 2011-02-23 | Light emitting diode structure |
| TW100106100 | 2011-02-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102651437A true CN102651437A (en) | 2012-08-29 |
Family
ID=46693387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210018435XA Pending CN102651437A (en) | 2011-02-23 | 2012-01-16 | Light emitting diode structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102651437A (en) |
| TW (1) | TW201236197A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054256A (en) * | 2017-12-13 | 2018-05-18 | 扬州乾照光电有限公司 | A kind of LED luminescence chips and processing method |
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| KR100999725B1 (en) * | 2010-03-08 | 2010-12-08 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102005061797B4 (en) * | 2005-12-23 | 2020-07-09 | Osram Opto Semiconductors Gmbh | Luminescence diode chip with current spreading layer and method for its production |
| TWI370560B (en) * | 2007-12-14 | 2012-08-11 | Delta Electronics Inc | Light-emitting diode device and manufacturing method thereof |
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- 2011-02-23 TW TW100106100A patent/TW201236197A/en not_active IP Right Cessation
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2012
- 2012-01-16 CN CN201210018435XA patent/CN102651437A/en active Pending
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| US20010011730A1 (en) * | 2000-02-08 | 2001-08-09 | Kabushiki Kaisha Toshiba | Semiconductor light emimiting device |
| TW544953B (en) * | 2002-06-03 | 2003-08-01 | Opto Tech Corp | Light emitting diode capable of increasing the light emitting efficiency |
| CN1977398A (en) * | 2004-06-30 | 2007-06-06 | 克里公司 | Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures |
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| CN101820039A (en) * | 2009-02-25 | 2010-09-01 | 晶发光电股份有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
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| CN108054256A (en) * | 2017-12-13 | 2018-05-18 | 扬州乾照光电有限公司 | A kind of LED luminescence chips and processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201236197A (en) | 2012-09-01 |
| TWI453950B (en) | 2014-09-21 |
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Application publication date: 20120829 |