CN102544294A - LED (Light Emitting Diode) chip capable of improving current transmission - Google Patents
LED (Light Emitting Diode) chip capable of improving current transmission Download PDFInfo
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- CN102544294A CN102544294A CN2012100478917A CN201210047891A CN102544294A CN 102544294 A CN102544294 A CN 102544294A CN 2012100478917 A CN2012100478917 A CN 2012100478917A CN 201210047891 A CN201210047891 A CN 201210047891A CN 102544294 A CN102544294 A CN 102544294A
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Abstract
The invention relates to an LED (Light Emitting Diode) chip capable of improving current transmission. The LED chip comprises a substrate, an N-type GaN (Gallium Nitride) layer, a quantum well and a P-type GaN layer, wherein the N-type GaN layer, the quantum well and the P-type GaN layer are arranged on the substrate; a first transparent conducting layer is coated on the P-type GaN layer, a second transparent conducting layer is coated on the first transparent conducting layer, and an electrically connected P electrode is arranged on the second transparent conducting layer; and a transparent current diffusion control insulating layer is arranged under the P electrode. According to the LED chip capable of improving the current transmission, disclosed by the invention, the current diffusion control insulating layer is arranged between the first transparent conducting layer and the second transparent conducting layer, is arranged under the P electrode and can completely shield the P electrode; a current path of the LED during operating can be changed by the current diffusion control insulating layer, and a light emitting region is arranged around the current diffusion control insulating layer and is far away from the P electrode, thus the absorption of the P electrode on light rays is avoided, the light emitting efficiency is improved, and the structure is compact, safe and reliable.
Description
Technical field
The present invention relates to a kind of led chip, especially a kind of led chip that improves current delivery belongs to the technical field of led chip.
Background technology
In recent years, light-emitting diode (LED) becomes one of the most valued light source technology undoubtedly.LED has the little characteristic of volume on the one hand, and LED possesses the electricity-saving characteristic of low current, low voltage drive on the other hand.Estimate that in theory the luminous efficiency of semiconductor LED illuminating lamp can meet or exceed 10 times of incandescent lamp, 2 times of fluorescent lamp.Simultaneously, it also has sound construction, and shock resistance and shock resistance are strong, and extra long life can reach 100000 hours; No infrared ray and ultraviolet radiation; No mercury helps numerous advantages such as environmental protection.
Wherein, as in one of main application of photoelectric field, the GaN sill has obtained increasing concern, utilizes the GaN base semiconductor material can produce super brightness indigo plant, green, white light emitting diode.Because the brightness of GaN based light-emitting diode has obtained very big raising, make the GaN based light-emitting diode all obtain application in a lot of fields, for example traffic lights, mobile phone are backlight, automobile tail light, short haul connection, photoelectricity calculate interconnection etc.Possibly then will cause the revolution of Lighting Industry in the near future as the GaN base white light LEDs of energy-saving and environmental protection ligthing paraphernalia especially, boundless application prospect is arranged, in a single day semiconductor lighting becomes a reality, and it is significant.
As everyone knows, conventional led chip needs positive and negative electrode and inserts and makes it luminous, and corresponding need make positive and negative routing dish on chip, and normally golden material partially absorbs greatlyyer to bluish-green coloured light, caused light absorption thus, influences light extraction efficiency greatly.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art, a kind of led chip that improves current delivery is provided, it is simple and compact for structure, reduces light absorption, improves light extraction efficiency.
According to technical scheme provided by the invention, the said led chip that improves current delivery comprises substrate and is positioned at n type gallium nitride layer, SQW and the P type gallium nitride layer on the said substrate; Be coated with first transparency conducting layer in the said P type desalination basic unit, be coated with second transparency conducting layer on first transparency conducting layer, said second transparency conducting layer is provided with the P electrode of electrical connection; Be provided with transparent electric current diffusion control insulating barrier under the said P electrode.
The projected area of said P electrode on first transparency conducting layer is not more than the projected area of electric current diffusion control insulating barrier.
Said electric current diffusion control insulating barrier comprises silicon dioxide.Said electric current diffusion control insulating barrier is positioned at the joint portion of first transparency conducting layer and second transparency conducting layer.
The equivalent resistance of said second transparency conducting layer is lower than the equivalent resistance of first transparency conducting layer.Said first transparency conducting layer and second transparency conducting layer are the ITO layer.
Said n type gallium nitride layer top is provided with the N electrode that is electrically connected with the n type gallium nitride layer.Said substrate is a sapphire substrate.
Advantage of the present invention: P type gallium nitride layer is provided with first transparency conducting layer; First transparency conducting layer is provided with second transparency conducting layer; First transparency conducting layer and the second electrically conducting transparent interlayer are provided with electric current diffusion control insulating barrier; Electric current diffusion control insulating barrier be positioned at the P electrode under, and can block the P electrode fully; Can change the LED current path in when work through electric current diffusion control insulating barrier, make light-emitting zone be positioned at electric current diffusion control insulating barrier around, away from the P electrode, avoid the absorption of P electrode pair light, improve light extraction efficiency, compact conformation, safe and reliable.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the vertical view of Fig. 1.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
Like Fig. 1 ~ shown in Figure 2: the present invention includes substrate 1, n type gallium nitride layer 2, SQW 3, P type gallium nitride layer 4, first transparency conducting layer 5, second transparency conducting layer 6, electric current diffusion control insulating barrier 7, P electrode 8, current delivery direction 9 and N electrode 10.
As depicted in figs. 1 and 2: as,, to the present invention includes substrate 1 to improve the light extraction efficiency of led chip in order to improve the path of current delivery in the present led chip; Be coated with n type gallium nitride layer 2 on the said substrate 1; Be coated with SQW 3 on the said n type gallium nitride layer 2, be coated with P type gallium nitride layer 4 on the SQW 3, P type gallium nitride layer 4 is provided with first transparency conducting layer 5; Be coated with second transparency conducting layer, 6, the second transparency conducting layers 6 on first transparency conducting layer 5 and be provided with the P electrode 8 of electrical connection.N type gallium nitride layer 2 is provided with the N electrode 10 of electrical connection, thereby forms two electrodes of led chip.Under said P electrode 8, be provided with electric current diffusion control insulating barrier 7, said electric current diffusion control insulating barrier 7 is positioned at second transparency conducting layer 6, and electric current diffusion control insulating barrier 7 is positioned at the joint portion of first transparency conducting layer 5 and second transparency conducting layer 6.Electric current diffusion control insulating barrier 7 is a transparent configuration, and the material of electric current diffusion control insulating barrier 7 is generally silicon dioxide, also can be other transparent insulation materials.Substrate 1 is a sapphire substrate.Substrate 1, n type gallium nitride layer 2, SQW 3 and the setting of P type gallium nitride layer 4 and the setting of conventional led chip are consistent.
P electrode 8 is not more than the projected area of electric current diffusion control insulating barrier 7 on first transparency conducting layer 5 at the transparent area on first transparency conducting layer 5; Since electric current diffusion control insulating barrier 7 be positioned at P electrode 8 under; Therefore the 8 downward projections of P electrode can drop on the electric current diffusion control insulating barrier 7 fully, and electric current diffusion control insulating barrier 7 can block P electrode 8 fully.When P electrode 8 is connected work with external power source; Because the insulating effect of electric current diffusion control insulating barrier 7, can make current delivery direction 9 be distributed in electric current diffusion control insulating barrier 7 around, away from P electrode 8; Avoid light by the absorption of P electrode 8, improve light extraction efficiency.
First transparency conducting layer 5 and second transparency conducting layer 6 are ITO (indium tin oxide semiconductor); First transparency conducting layer 5 is through The high temperature anneal; Second transparency conducting layer 6 need not pass through The high temperature anneal; The equivalent resistance of second transparency conducting layer 6 is lower than the equivalent resistance of first transparency conducting layer 5,1/3 of the equivalent resistance of general second transparency conducting layer 6 and first transparency conducting layer 5.First transparency conducting layer 5 is through after the alloy treatment of high annealing, can solve and the contact problems of P type gallium nitride layer 4, and this also is processing steps that all use ITO must carry out; Second transparency conducting layer 6 can effectively solve because of increasing the problem that electric current diffusion control insulating barrier 7 causes the rising of led chip voltage without the alloy treatment of high annealing.
As depicted in figs. 1 and 2: during use, led chip is connected with external power source through P electrode 8, N electrode 10; P electrode 8 is electrically connected with P type gallium nitride layer 4 through first transparency conducting layer 5, second transparency conducting layer 6, and N electrode 10 is electrically connected with n type gallium nitride layer 2; Led chip is externally luminous under the voltage effect.Owing under the P electrode 8 electric current diffusion control insulating barrier 7 is set; Therefore the potential lines of sending from P electrode 8 can not be vertically downward, and electric current can promptly make current delivery direction 9 change from marginal flow first transparency conducting layer 5 and the P type gallium nitride layer 4 downwards of electric current diffusion control insulating barrier 7; The light-emitting zone of led chip be positioned at electric current diffusion control insulating barrier 7 around; Away from P electrode 8, avoid being absorbed by P electrode 8, improve light extraction efficiency.
Claims (8)
1. a led chip that improves current delivery comprises substrate (1) and is positioned at n type gallium nitride layer (2), SQW (3) and the P type gallium nitride layer (4) on the said substrate (1); It is characterized in that: be coated with first transparency conducting layer (5) in the said P type desalination basic unit (4), be coated with second transparency conducting layer (6) on first transparency conducting layer (5), said second transparency conducting layer (6) is provided with the P electrode (8) of electrical connection; Be provided with transparent electric current diffusion control insulating barrier (7) under the said P electrode (8).
2. the led chip that improves current delivery according to claim 1 is characterized in that: the projected area of said P electrode (8) on first transparency conducting layer (5) is not more than the projected area of electric current diffusion control insulating barrier (7).
3. the led chip that improves current delivery according to claim 1 is characterized in that: said electric current diffusion control insulating barrier (7) comprises silicon dioxide.
4. the led chip that improves current delivery according to claim 1 is characterized in that: said electric current diffusion control insulating barrier (7) is positioned at the joint portion of first transparency conducting layer (5) and second transparency conducting layer (6).
5. the led chip that improves current delivery according to claim 1 is characterized in that: the equivalent resistance of said second transparency conducting layer (6) is lower than the equivalent resistance of first transparency conducting layer (5).
6. the led chip that improves current delivery according to claim 5 is characterized in that: said first transparency conducting layer (5) is the ITO layer with second transparency conducting layer (6).
7. the led chip that improves current delivery according to claim 1 is characterized in that: said n type gallium nitride layer (2) top is provided with the N electrode (10) that is electrically connected with n type gallium nitride layer (2).
8. the led chip that improves current delivery according to claim 1 is characterized in that: said substrate (1) is a sapphire substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100478917A CN102544294A (en) | 2012-02-28 | 2012-02-28 | LED (Light Emitting Diode) chip capable of improving current transmission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100478917A CN102544294A (en) | 2012-02-28 | 2012-02-28 | LED (Light Emitting Diode) chip capable of improving current transmission |
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| CN102544294A true CN102544294A (en) | 2012-07-04 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569581A (en) * | 2012-02-28 | 2012-07-11 | 江苏新广联科技股份有限公司 | LED chip structure with overlapped electrodes |
| CN106887490A (en) * | 2017-02-21 | 2017-06-23 | 福建兆元光电有限公司 | A kind of semi-conductor LED chips |
| WO2019085538A1 (en) * | 2017-11-03 | 2019-05-09 | 江苏新广联半导体有限公司 | Led flip chip for improving current spreading uniformity, and manufacturing method therefor |
| CN111916539A (en) * | 2019-05-08 | 2020-11-10 | 深圳第三代半导体研究院 | Front-mounted integrated unit diode chip |
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| JP2008135554A (en) * | 2006-11-28 | 2008-06-12 | Nichia Chem Ind Ltd | Semiconductor light-emitting element, light-emitting device, and manufacturing method for semiconductor light-emitting element |
| CN101237013A (en) * | 2007-02-01 | 2008-08-06 | 日亚化学工业株式会社 | Semiconductor light emitting element |
| CN102074629A (en) * | 2010-12-16 | 2011-05-25 | 厦门市三安光电科技有限公司 | Light emitting diode with sandwich-type current blocking structure |
| CN202487644U (en) * | 2012-02-28 | 2012-10-10 | 江苏新广联科技股份有限公司 | LED chip capable of improving current transmission |
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2012
- 2012-02-28 CN CN2012100478917A patent/CN102544294A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008135554A (en) * | 2006-11-28 | 2008-06-12 | Nichia Chem Ind Ltd | Semiconductor light-emitting element, light-emitting device, and manufacturing method for semiconductor light-emitting element |
| CN101237013A (en) * | 2007-02-01 | 2008-08-06 | 日亚化学工业株式会社 | Semiconductor light emitting element |
| CN102074629A (en) * | 2010-12-16 | 2011-05-25 | 厦门市三安光电科技有限公司 | Light emitting diode with sandwich-type current blocking structure |
| CN202487644U (en) * | 2012-02-28 | 2012-10-10 | 江苏新广联科技股份有限公司 | LED chip capable of improving current transmission |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569581A (en) * | 2012-02-28 | 2012-07-11 | 江苏新广联科技股份有限公司 | LED chip structure with overlapped electrodes |
| CN102569581B (en) * | 2012-02-28 | 2015-07-01 | 江苏新广联科技股份有限公司 | LED chip structure with overlapped electrodes |
| CN106887490A (en) * | 2017-02-21 | 2017-06-23 | 福建兆元光电有限公司 | A kind of semi-conductor LED chips |
| CN106887490B (en) * | 2017-02-21 | 2018-04-20 | 福建兆元光电有限公司 | A kind of semi-conductor LED chips |
| CN108417680A (en) * | 2017-02-21 | 2018-08-17 | 福建兆元光电有限公司 | A kind of semi-conductor LED chips that current spread is efficient |
| CN108565321A (en) * | 2017-02-21 | 2018-09-21 | 福建兆元光电有限公司 | A kind of semi-conductor LED chips that voltage is low |
| CN108711586A (en) * | 2017-02-21 | 2018-10-26 | 福建兆元光电有限公司 | A kind of semi-conductor LED chips that light extraction efficiency is high |
| CN108711586B (en) * | 2017-02-21 | 2019-09-13 | 福建兆元光电有限公司 | A kind of semi-conductor LED chips that light extraction efficiency is high |
| CN108417680B (en) * | 2017-02-21 | 2020-04-28 | 福建兆元光电有限公司 | Semiconductor LED chip with high current diffusion efficiency |
| WO2019085538A1 (en) * | 2017-11-03 | 2019-05-09 | 江苏新广联半导体有限公司 | Led flip chip for improving current spreading uniformity, and manufacturing method therefor |
| CN111916539A (en) * | 2019-05-08 | 2020-11-10 | 深圳第三代半导体研究院 | Front-mounted integrated unit diode chip |
| CN111916539B (en) * | 2019-05-08 | 2022-04-19 | 深圳第三代半导体研究院 | Front-mounted integrated unit diode chip |
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Application publication date: 20120704 |