CN108711586B - A kind of semi-conductor LED chips that light extraction efficiency is high - Google Patents
A kind of semi-conductor LED chips that light extraction efficiency is high Download PDFInfo
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- CN108711586B CN108711586B CN201810480626.5A CN201810480626A CN108711586B CN 108711586 B CN108711586 B CN 108711586B CN 201810480626 A CN201810480626 A CN 201810480626A CN 108711586 B CN108711586 B CN 108711586B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 238000000605 extraction Methods 0.000 title claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910021389 graphene Inorganic materials 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 230000007704 transition Effects 0.000 description 10
- 230000005611 electricity Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 241001080929 Zeugopterus punctatus Species 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
The present invention relates to a kind of semi-conductor LED chips, including first electrode and second electrode, it further include electric current transport layer, the electric current transport layer is set between first electrode and the second electrode, at least two current channels are formed between the first electrode and the second electrode, the equal length of at least two current channel, the electric current transport layer are transparent conductive material.Semi-conductor LED chips of the invention have the advantages of reducing voltage, improving light extraction efficiency.
Description
This case is with the applying date on February 21st, 2017, and application No. is 201710092326.5, entitled " one kind is partly led
The divisional application that the patent of invention of body LED chip " carries out for female case.
Technical field
The present invention relates to the technology of semiconductor chips, in particular to a kind of semi-conductor LED chips.
Background technique
In recent years, group iii nitride semiconductor material and device become the focus of people's research, and especially nitride is sent out
Optical diode (LED), can be widely used in blue light emitting device.Have with the LED that gallium nitride (GaN) is representative and light efficiency
Many advantages, such as rate is high, power consumption is small, calorific value is low, the service life is long, small in size and environmental protection and energy saving, thus have a wide range of applications city
, such as the illumination of automotive lighting, backlight, signal, large screen display and military affairs field, and with the continuous development of its technology with
Maturation, LED are expected to become novel forth generation lighting source.
Currently, most nitride semiconductor layers are grown in the Sapphire Substrate of insulation.As solid luminescent
The LED of element, primary structure include substrate, n-type nitride semiconductor layer, active layer, p-type nitride semiconductor layer.Pass through
ICP etching technics removes part of p-type nitride semiconductor layer and active layer, to expose n-type nitride semiconductor layer, and in N-shaped
With on p-type nitride semiconductor layer distinguish depositing electrode, be fabricated to positive cartridge chip.When Injection Current is applied on electrode, p-type is partly
The electronics in hole and n-type semiconductor layer in conductor layer is injected separately into active layer, and light is issued after active layer is compound and is emitted.
For conventional nitride light emitting diode, since there is p-type nitride lower electric conductivity to make cross of the electric current in it
It is far below vertical conduction performance to electric conductivity, and the distance of electrode to active area is limited, electric current is not in time for cross also
How far active area is just had arrived to expansion, so that the region that active area shines is concentrated mainly on base part；In addition, for passing
It unites for iii-nitride light emitting devices, also and non-equidistant, and electric current tends to flow shortest path in the path of p-electrode to n-electrode
Or minimum range, therefore current channel is very few, causes current crowding, extension is uneven, local luminous relatively strong and local temperature mistake
Height reduces the reliability of device.
For example, Figure of description 1 is the plan view of typical conventional nitride LED chip, wherein p pad is circle, from
Extend finger-type electrode at pad.By p, n-electrode Injection Current, since the electric current largely injected tends to flow shortest path
Diameter or minimum range, therefore, current channel in Fig. 1 only one, will cause chip voltage height, current distribution is uneven is even, out
Light efficiency is low.
Therefore, electrode design needs rational deployment n-electrode and p-electrode, to increase current channel, reduce voltage, improvement electricity
Flow distribution and raising light extraction efficiency.
Summary of the invention
The technical problems to be solved by the present invention are: a kind of semi-conductor LED chips are provided, by changing electrode lay-out, with
Increase current channel, and be inserted into electric current transport layer, with strengthening electric current migration rate, mitigate current crowding, to improve electric current expansion
Dissipate efficiency.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
A kind of semi-conductor LED chips, including first electrode and second electrode further include electric current transport layer, and the electric current passes
Defeated layer is set between first electrode and the second electrode, and at least two are formed between the first electrode and the second electrode
A current channel, the equal length of at least two current channel, the electric current transport layer are transparent conductive material.
The beneficial effects of the present invention are:
Since electric current tends to transmit by shortest path, the formation length phase between first electrode and the second electrode
Deng at least two current channel, i.e., increase current channel be two or more, make current distribution more evenly, with reduce chip electricity
Pressure.Using the high material of conductivity and thermal conductivity as electric current transport layer, for enhancing electron transfer rate and heat diffusion, into
One step mitigates current-crowding effect, and then improves light extraction efficiency.
Detailed description of the invention
Fig. 1 is the plan view of the semi-conductor LED chips in the prior art based on nitride；
Fig. 2 is the side sectional view of the semi-conductor LED chips of the embodiment of the present invention one；
Fig. 3 is the plan view of the semi-conductor LED chips of the embodiment of the present invention one；
Fig. 4 is the plan view of the semi-conductor LED chips of the embodiment of the present invention one；
Fig. 5 is the plan view of the semi-conductor LED chips of the embodiment of the present invention two；
Fig. 6 is the plan view of the semi-conductor LED chips of the embodiment of the present invention three；
Label declaration:
1, substrate；2, the first conductive semiconductor layer；3, active layer；4, the second conductive semiconductor layer；
5, electric current transport layer；6, conductive layer；7, second electrode；71, the second pad；72, second electrode branch；73, transition
Portion；8, first electrode；81, the first pad；82, first electrode branch；
100, chip.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached
Figure is explained.
The most critical design of the present invention is: adding electric current transport layer, while increasing current channel to two or more, makes electricity
Flow distribution more evenly, to improve current spread efficiency.
Semi-conductor LED chips of the invention can be applied to field of electronic illumination, such as by the of chip 100 of the invention
One electrode 8 and second electrode 7 are connected with external circuit, shine so that chip 100 is realized.Chip 100 of the invention increases electric current
To two or more, more evenly, current spread efficiency is can be improved in current distribution, and then obtains the luminous efficiency of chip effectively in channel
Raising；Electric current transport layer 5 is added simultaneously, with strengthening electric current migration rate and heat diffusion, mitigates current crowding, to improve
The reliability of current spread efficiency and device.
It should be noted that above-mentioned electric current transport layer is the hierarchical structure added in semi-conductor LED chips, it is
The conductive semiconductor layer, active layer, the conductive layer that are different from semi-conductor LED chips etc. be common, the general or usual level used
Structure.
- Fig. 6 referring to figure 2., a kind of semi-conductor LED chips, including first electrode 8 and second electrode 7, the first electrode
At least two current channel, the equal length of at least two current channel are formed between 8 and the second electrode 7；
It further include electric current transport layer 5, the electric current transport layer 5 is set between first electrode 8 and the second electrode 7, the electric current
Transport layer 5 is transparent conductive material.
The current channel is the transmission path of electric current.Since electric current tends to transmit by shortest path, it is described
Current channel is the transmission path of the shortest path of electric current, according to above-mentioned, i.e., of the invention first electrode and second electricity
The transmission path of the shortest path of the electric current of at least two equal lengths is formed between pole, that is, forms at least two above-mentioned electric current
Channel.
The electric current transport layer 5, is placed in the region between first electrode 8 and the second electrode 7.It is transparent using it
Conductive material improves current transfer rate, accelerates the transmission of electric current in chip, mitigates the crowded of electric current, to improve going out for chip
Light efficiency.
The material of the electric current transport layer 5 is the conductive material of high transparency.Theoretically, in terms of type, all is transparent
Conductive material can be used as electric current transport layer 5 of the invention, and material transmissivity is high, reduce to recombination photons in Quantum Well
It absorbs, the light that can be emitted is more, and chip is brighter；The material of high conductivity and high heat conductance can quickly transmit electric current and heat, subtract
Light current crowding improves the luminous efficiency and reliability of chip；It is total to can choose one or more conductive materials for quantitative aspects
With as electric current transport layer 5 of the invention.
Preferably, conductive material with good conductivity, such as graphene or nano silver be can choose；Or selection metal is led
Electric material perhaps metal composite conductive material perhaps non-metallic conducting material or nonmetallic composite conducting material, either
Metal and nonmetallic compound conductive material.
As can be seen from the above description, the beneficial effects of the present invention are:
Since electric current tends to transmit by shortest path, the formation length phase between first electrode and the second electrode
Deng at least two current channel, i.e., increase current channel be two or more, make current distribution more evenly, with reduce chip electricity
Pressure, and then improve light extraction efficiency.And it is inserted into electric current transport layer between transparency conducting layer and the second conductive semiconductor layer, adds
Fast electric current transmission and heat diffusion, reduce current crowding, improve chip light-emitting efficiency and stability.
Further, the second electrode 7 include the second pad 71 and extend from second pad at least one
Second electrode branch 72；Described at least two are formed between the first electrode 8 and at least one described second electrode branch 82
Current channel.
Seen from the above description, as a specific topology example, second electrode includes the second pad and second electrode
Branch, second electrode branch extend the second pad, to realize the conducting with circuit.At this point, current channel first electrode with
It is formed between second electrode branch.
Further, the first electrode 8 is the first pad.
Seen from the above description, as a specific topology example, first electrode is the first pad, i.e. first electrode is straight
It is connected in a pad structure, according to the shape feature of the first pad, current channel shape between second electrode branch and the first pad
At.Such as first pad when being rectangular, current channel are symmetrically held in two of second electrode branch and the first rectangular pad
It is formed between portion, the shape of certain first pad is not limited to rectangular, such as can also be triangle, semicircle, circle or ellipse
Shape etc..
Further, the first electrode 8 includes the first pad 81 and the first electrode branch from the extension of the first pad
82, at least two electric current is formed between the first electrode branch 82 and at least one described second electrode branch 72
Channel.
Seen from the above description, as a specific topology example, first electrode includes the first pad and first electrode
Branch, the number of second electrode branch are at least two, such as two；The number of first electrode branch can be one, or
It is more than two.At this point, current channel is formed in second electrode branch and first electrode branch.For example, the number of second electrode branch
Mesh is two, when the number of first electrode branch is one, by design first electrode branch and second electrode branch in chip
On distributing position, make being equidistant for two second electrode branches and one first electrode branch, and then second electrode
Two current channels are formed between branch and first electrode branch.
Further, the first electrode 8 include the first pad 81 and extend from first pad at least one
First electrode branch 82, shape between at least one described first electrode branch 82 and at least one described second electrode branch 72
At at least one described current channel, the institute of at least one is formed between first pad 81 and the second electrode branch 72
State current channel.
Seen from the above description, as a specific topology example, first electrode includes the first pad and first electrode
Branch, current channel is between first electrode branch and second electrode branch and between the first pad and second electrode branch
It is formed.For example, when the number of first electrode branch and second electrode branch is one, at this point, tending to pass through according to electric current
Shortest path transmission, is designed the first pad, first electrode branch and the distribution of second electrode branch, so that, the first electricity
A current channel is formed between pole branch and second electrode branch, also forms one between the first pad and second electrode branch
A current channel must obtain two current channels.Certainly, in practical application, can according to need, first electrode is designed
The number of branch and second electrode branch, such as be two or more, so that in first electrode branch and second electrode branch
Between and the first pad and second electrode branch between the number of current channel that is formed be greater than two, to obtain good
Chip light-emitting efficiency.
Further, the second electrode branch 72 at least two, at least two second electrode branch 72 it
Between be respectively separated setting.
Seen from the above description, multiple when the number of second electrode branch is multiple as a specific topology example
Setting is spaced between second electrode branch.Similarly, when the number of first electrode branch is multiple, multiple first electrode point
Above-mentioned spaced mode can also be used between branch.
Further, the cross section of the first electrode branch 82 gradually decreases along its length, the first electrode point
The end of branch 82 is needle point structure, and the needle point structure of the first electrode branch 82 is towards second electrode.
Seen from the above description, as a specific topology example, the shape of first electrode branch can be gradually mistake
Cross the needle-shaped of diminution.
Further, the cross section of the second electrode branch 72 gradually decreases along its length, the second electrode point
The end of branch 72 is needle point structure, and the needle point structure of the second electrode branch 72 is towards first electrode.
Seen from the above description, as a specific topology example, the shape of second electrode branch can be gradually mistake
Cross the needle-shaped of diminution.The shape design of above-mentioned acicular second electrode can improve current crowding situation to a certain extent.
Further, the shape of first pad 81 is that triangle, square, circle, ellipse, semicircle or half are ellipse
It is round.
Seen from the above description, as a specific topology example, the shape of the first pad can be triangle, four directions
Shape, circle, ellipse, semicircle or half elliptic.Preferably, it can use above-mentioned shape feature, the first pad and the be set
The distribution situation of two electrode branches, to obtain more than two current channels.For example, designing the first pad so that square
Two ends it is equal to the distance between second electrode branch, thus, the of second electrode branch and square
Two current channels can be formed between two angles of one pad.
Further, it is triangle, square, circle that the shape of second pad 71, which is the shape of second pad,
Shape, ellipse, semicircle or half elliptic.
Seen from the above description, as a specific topology example, the shape of the second pad can be triangle, four directions
Shape, circle, ellipse, semicircle or half elliptic.
Circular pad and finger electrode in compared with the prior art, first electrode branch of the invention, second electrode point
The shape of branch, the first pad and the second pad can improve current crowding situation to a certain extent.
Further, the second electrode branch 72 is two, and described two second electrode branches 72 are respectively symmetrically
It is set to the two sides of second pad 71.
It seen from the above description,, can be with when the number of second electrode branch is two as a specific topology example
Using symmetrically arranged distribution mode.Similarly, when the number of the first electrode branch is two, two first electrodes
Branch can also symmetrically be set to the two sides of first pad.
Further, described two second electrode branches 72 interconnect and form one U-shaped, the U-shaped bottom and the
The connection of two pads 71, two U-shaped ends form the current channel between the first pad 81.
Seen from the above description, as a specific topology example, two second electrode branches interconnect and shape
It is U-shaped at one, more conducively current spread.At this point, current channel is formed in two U-shaped ends between the first pad.
Further, the Liang Ge second electrode branch 72 is interconnected to form a pendulum-type, and the two of the pendulum-type
A end is to forming the current channel between the first pad 81.
Seen from the above description, as a specific topology example, two second electrode branches interconnect and shape
At a pendulum-type, at this point, current channel is formed in two ends of pendulum-type between the first pad.
Further, the Liang Ge second electrode branch 72 is interconnected to form a groove profile, two ends of the groove profile
Portion is to forming the current channel between the first pad 81.
Seen from the above description, as a specific topology example, two second electrode branches can also mutually be connected
A groove profile is connect and is formed, at this point, current channel is formed in two ends of groove profile between the first pad.
Further, described two second electrode branches 72 are symmetrical arranged on chip, a second electrode branch
72 be the half of another second electrode branch 72 and 100 middle line distance of chip at a distance from chip frontside edge.
Seen from the above description, as a specific topology example, Liang Ge second electrode branch symmetrically sets on chip
It sets.For example, the symmetrical structure of above-mentioned U-shaped, pendulum-type or groove profile etc. can be formed.Also, design a second electrode branch with
The distance of chip edge is the half of another second electrode branch Yu chip middle line distance, is expanded convenient for enhancing the electric current on chip
Dissipate efficiency.
Further, the second electrode 7 further includes a transition part 73, and one end of the transition part 73 is welded from described second
Disk 71 extends outwardly, and the other end of the transition part 73 is set to the center of the U-shaped structure bottom.
Seen from the above description, as a specific topology example, second electrode further includes a transition part, U-shaped structure
Second electrode branch connect with the second pad by transition part, to realize the conducting of circuit.At this time, it should be noted that transition part and U
Being symmetrical arranged for type structure, guarantees two end being equidistant to the current channel between the first pad of U-shaped structure.
Conceived based on basic technology of the invention, those skilled in the art is above-mentioned to first it can be concluded that draw a conclusion
The description of the structure, shape and connection relationship of electric current branch and the second electric current branch, for the first electric current branch and the second electricity
Scheme after flow branching is mutually exchanged can also be applied, i.e., above-mentioned structure, shape to the first electric current branch and the second electric current branch
The description of shape and connection relationship is also applied for directly replacing with the first electric current branch into the second electric current branch, and the second electric current branch is straight
Take over the scheme for being changed to the first electric current branch.Scheme after first electric current branch and the second electric current branch mutually exchange equally can be with
More than two current channels are obtained, the distribution of electric current is improved, to reduce chip voltage, and then improve light extraction efficiency.
Further, further include substrate 1, the first conductive semiconductor layer 2, active layer 3, the second conductive semiconductor layer 4 and thoroughly
Bright conductive layer 6, the high speed electric current transport layer 5 between the second conductive semiconductor layer 4 and transparency conducting layer 6, described first leads
Electric semiconductor layer 2 is deposited on the substrate 1, and the surface of the first conductive semiconductor layer 2 far from substrate 1 includes first area
And second area, the first electrode 8 are deposited on the first area, the active layer 3, the second conductive semiconductor layer 4, height
Fast electronic conductive layer 5, transparency conducting layer 6 and second electrode 7 are sequentially deposited at respectively on the second area.
Seen from the above description, as a specific topology example, semi-conductor LED chips further include substrate, first lead
Electric semiconductor layer, active layer, the second conductive semiconductor layer and conductive layer, between the second conductive semiconductor layer and conductive layer
High-velocity electrons conducting shell, and a specific, complete chip structure is formed according to above-mentioned setting.
Further, the electric current transport layer 5 is set between the second conductive semiconductor layer and transparency conducting layer.
Further, the material of electric current transport layer 5 is at least one of graphene and nano silver.
Seen from the above description, as a specific topology example, electric current transport layer 5 can be placed in p-type nitride light-emitting
Between layer and transparency conducting layer, material can be the material that graphene, nano silver etc. have superior electrical conductivity, but be not limited only to
Both materials.
Further, the material of first conductive semiconductor layer 2 and the second conductive semiconductor layer 4 is respectively the IIIth race's nitrogen
Compound.
Seen from the above description, the material of the first conductive semiconductor layer and the second conductive semiconductor layer is the nitridation of the IIIth race
Object, it is hereby achieved that the excellent performance of group iii nitride semiconductor.
Specifically, the first conductive semiconductor layer, the second conductive semiconductor layer and active layer can be by with compounds
InxAlyGa1-x-yThe semiconductor material of N (herein, 0≤x, 0≤y, and x+y≤1) is formed.More specifically, the first conductive semiconductor
Layer or the second conductive semiconductor layer can be by forming doped with GaN or GaN/AlGaN layers of N-shaped conductive impurity.For example, N-shaped is mixed
It is miscellaneous to can be Si, Ge, Sn etc., it is preferred to use Si.In addition, the second conductive semiconductor layer or the first conductive semiconductor layer can be by
Doped with GaN or GaN/AlGaN layers of formation of p-type electric-conducting impurity.For example, p-type doping can be Mg, Zn, Be etc., preferably make
Use Mg.Active layer can be formed by the InGaN/GaN layer with multi-quantum pit structure.
Further, the high-velocity electrons conducting shell can be the material that graphene, nano silver etc. have superior electrical conductivity,
But it is not limited only to both materials.
Further, the transparency conducting layer can be the material that ITO, GZO, ZnO etc. have high-penetration rate and electric conductivity.
Further, the first electrode 8 is followed successively by n-electrode and p-electrode with the second electrode 7, alternatively, described first
Electrode 8 and the second electrode 7 are followed successively by p-electrode and n-electrode.
Being conceived based on basic technology of the invention, those skilled in the art is obviously it can be concluded that draw a conclusion, and above-mentioned the
One electrode 8 can arbitrarily select n-electrode and p-electrode with second electrode 7, i.e. first electrode 8 can also be mutually right with second electrode 7
It adjusts, and the scheme after exchanging also has the technical effect for improving current distribution.
Seen from the above description, in above-mentioned semi-conductor LED chips of the invention, first electrode can be n-electrode, and second
Electrode is then p-electrode, at this point, the first conductive semiconductor layer is n-type semiconductor layer, the second conductive semiconductor layer is p-type semiconductor
Layer or vice versa.
Referring to figure 2. to Fig. 4, the embodiment of the present invention one are as follows:
With reference to Fig. 2, Fig. 3 and Fig. 4, the semi-conductor LED chips of the present embodiment include: substrate 1, are sequentially depositing n on substrate 1
Type nitride semiconductor layer (i.e. the first conductive semiconductor layer 2), active layer 3, p-type nitride semiconductor layer (i.e. second conductive half
Conductor layer 4), transparency conducting layer 6, the electric current transport layer 5 between transparency conducting layer and p-type nitride semiconductor layer, material
Matter selects graphene and/or nano silver, and etches the active layer 3 of a part, p-type nitride semiconductor layer 4, to form table top knot
Then structure is exposed the portion of upper surface of n-type nitride semiconductor layer, i.e. first area using etching technics such as ICP, not exposed
As second area out.The p-electrode (i.e. second electrode 7) formed on transparency conducting layer 6 and the N-shaped nitride half in exposing
The n-electrode (i.e. first electrode 8) formed in conductor layer.
In view of Lattice Matching and technical problem, usually using sapphire as substrate 1.The plane of Sapphire Substrate is advantageous
It is stable in the growth of GaN film, and at high temperature, so that its substrate for being used as blue or green light emitting device.
Second electrode 7 includes the second pad 71 and the second electrode branch 72 extended from the second pad.Institute in the present invention
The second pad 71 stated is ellipse, the second electrode branch 72 extended be it is needle-shaped, the top of second electrode branch 72 it is thick and
Bottom is thin.It is greater than the area of section at e referring to the area of section at the d in Fig. 3-4.Compared to the circular pad in Fig. 1 and refer to
The shape of shape electrode, the acicular second electrode of the present embodiment can improve current crowding situation to a certain extent.
First electrode 8 includes the first pad 81 and the two first electrode branches 82 extended from the first pad two sides.
The symmetrical two sides of the first pad 81 are arranged in two first electrode branches 82, form a pendulum-type.Keep current distribution equal
It is even, it is preferable that minimum range (b in Fig. 3 and Fig. 4) between the end of second electrode branch 72 and the first pad 81, second
The distance (a and c in Fig. 3 and Fig. 4) of the end of the end and first electrode branch 82 of electrode branches 72 is equal.That is, a, b, c away from
From equal.Since electric current tends to transmit by shortest path, so compared to Fig. 1, in the present embodiment, referring to Fig. 3 and Fig. 4,
Current channel increases to 3 by one, and more evenly, chip voltage can reduce current distribution, and light extraction efficiency improves.It need to emphasize
Be, the shape of first electrode branch 82 be not limited to Fig. 3 and Fig. 4 both, the first electrode branch 82 of other shapes can body
The end of minimum range, second electrode branch 72 between the end and the first pad 81 of existing second electrode branch 72 of the invention
It is equidistant with the end of first electrode branch 82, in protection scope.
Referring to figure 5. and Fig. 6, the embodiment of the present invention two are as follows:
On the basis of the semi-conductor LED chips of embodiment one, in the semi-conductor LED chips of the present embodiment, second electrode 7
The second electrode branch 72 of the second pad 71 and the bar shaped extended thereon including ellipse.The second pad 71 is located in Fig. 5
The middle line of chip, the distance of the Liang Ge second electrode branch 72 extended from 71 two sides of the second pad to chip edge are the second electricity
Pole branch 72 arrives the half of chip middle line distance.The end of Liang Ge second electrode branch 72 to rectangular 81 two sides of the first pad
Endpoint is equidistant, referring in Fig. 5, f=g.The distance (referring to the A in Fig. 5) of second electrode branch 72 to chip edge is
Half of the Liang Ge second electrode branch 72 to chip middle line distance (referring to the 2A in Fig. 5).In the present embodiment, there are two move electric current
Mobile Communication road improves current distribution, reduces chip voltage, improves luminous efficiency.It is emphasized that not office, second electrode branch 72
Limit and two kinds of shapes in this embodiment, any shape that can embody inventive concept all should be in protection scope.
Referring to figure 4. and Fig. 6, the embodiment of the present invention three are as follows:
On the basis of the semi-conductor LED chips of embodiment one, in the semi-conductor LED chips of the present embodiment, second electrode 7
The second electrode branch 72 of the second pad 71 and the bar shaped extended thereon including ellipse.The second pad 71 is located in Fig. 6
The middle line of chip, extends the transition part 73 with certain length among the second pad 71, transition part 73 again with two second
Electrode branches 72 connect.The distance of the Liang Ge second electrode branch 72 that two sides are extended to chip edge is second electrode branch 72
To the half of chip middle line distance.The end of Liang Ge second electrode branch 72 to rectangular 81 two sides of the first pad endpoint away from
From equal, referring in Fig. 6, f=g.The length (L2) of the second electrode branch 72 of the second electrode 7 of Fig. 6 with from the second pad 71
The length (L1) for the transition part 73 that place extends out is equal, L1=L2.Likewise, second electrode branch 72 to chip edge away from
From the half that (referring to the A in Fig. 6) is with a distance from Liang Ge second electrode branch 72 to chip middle line (referring to the 2A in Fig. 6).This reality
It applies in example, there are two migrating channels for electric current, improve current distribution, reduce chip voltage, improve luminous efficiency.It is however emphasized that
It is that second electrode branch 72 does not limit to all to answer with two kinds of shapes in this embodiment, any shape that can embody inventive concept
In protection scope.
It is emphasized that in the present invention item number of second electrode branch 72 and first electrode branch 82 view concrete condition and
It is fixed.For large-sized chip, can there are second electrode branch 72 and first electrode branch 82 simultaneously.Keep a plurality of second electrode
Branch 72 is equidistant to a plurality of first electrode branch 82, so that it may increase current channel, guarantee current channel at two
More than, that is, current spread efficiency is enhanced, therefore voltage can be reduced, improve chip light-emitting efficiency.
Table 1 is the nitride semiconductor LED chip of the prior art and the semi-conductor LED chips of the embodiment of the present invention one to three
It (is only distinguished with the semi-conductor LED chips of embodiment one to three when not adding electric current transport layer and is " not adding electric current transmission
Layer ", other structures design it is all the same) voltage and light extraction efficiency contrast table.
Table 1
It can see by table 1, the nitride semiconductor LED chip of the prior art compared to Fig. 1, semiconductor of the invention
LED chip can reduce voltage to some extent, improve light extraction efficiency with the increase of current channel.
It should also be emphasized that the present invention is using more than two current channels and to add the cooperation of electric current transport layer and set
Meter, to reach the technical effect for improving chip light-emitting efficiency.
Table 2 is the nitride semiconductor LED chip of the prior art and the semi-conductor LED chips of the embodiment of the present invention one to three
The voltage of (have and add electric current transport layer) and the contrast table of light extraction efficiency.
Table 2
It can see by table 2, the nitride semiconductor LED chip of the prior art compared to Fig. 1, semiconductor of the invention
LED chip passes through the increase of current channel and adds the matching design of electric current transport layer, can reduce voltage to a certain extent,
Improve light extraction efficiency.
Need to illustrate has, and in semi-conductor LED chips technical field, it is many for how reducing voltage and improving light-out effect
More technical staff study for a long period of time, endeavour the technology captured weight difficult point.Voltage value and efficiency value in above-mentioned table 2 of the invention is with table
1 comparison, the variation of " smaller " that numerically shows are the technological achievement that applicant is obtained by long-term research and development, to such as
What, which reduces voltage and improves light-out effect, plays substantive technical contribution.
In conclusion semi-conductor LED chips provided by the invention have the advantages of reduction voltage, raising light extraction efficiency.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in relevant technical field, similarly include
In scope of patent protection of the invention.
Claims (8)
1. a kind of semi-conductor LED chips that light extraction efficiency is high, including first electrode and second electrode, which is characterized in that further include
Electric current transport layer, the electric current transport layer are set between first electrode and the second electrode, the first electrode with it is described
At least two current channels, the equal length of at least two current channel, the electric current transmission are formed between second electrode
Layer is transparent conductive material；
The region that the marginal portion of the electric current transport layer and chip surrounding surround under the depression angle of chip respectively with it is described
First electrode and second electrode overlapping, and under the depression angle of chip electric current transport layer marginal portion respectively with first electrode
Distance is equipped between second electrode；
The second electrode includes the second pad and at least one second electrode branch for extending from second pad；It is described
First electrode include the first pad and from the first pad extend first electrode branch, the first electrode branch with it is described
At least one second electrode branch between form at least two current channel；
The cross section of at least one of the first electrode branch and second electrode branch gradually decreases along its length；
The second electrode branches into two, between Liang Ge second electrode branch respectively symmetrically be set to second pad
Two sides；Described two second electrode branches are symmetrical arranged on chip, and a second electrode branch is at a distance from chip edge
The half of another second electrode branch and chip middle line distance；The cross section of the first electrode branch gradually subtracts along its length
Few, the end of the first electrode branch is needle point structure, and the needle point structure of the first electrode branch is towards second electrode；Institute
The cross section for stating second electrode branch gradually decreases along its length, and the end of the second electrode branch is needle point structure, institute
The needle point structure of second electrode branch is stated towards first electrode；
The first electrode includes the first pad and the first electrode branch of at least one extended from first pad, until
At least one current channel, first pad are formed between a few first electrode branch and at least one second electrode branch
The current channel of at least one is formed between the second electrode branch；
Described two second electrode branches interconnect and are formed one U-shaped, and the U-shaped bottom is connect with the second pad, the U
Two ends of type are to forming the current channel between the first pad.
2. the high semi-conductor LED chips of light extraction efficiency according to claim 1, which is characterized in that first pad
Shape is triangle, square, circle, ellipse, semicircle or half elliptic.
3. the high semi-conductor LED chips of light extraction efficiency according to claim 1, which is characterized in that second pad
Shape is triangle, square, circle, ellipse, semicircle or half elliptic.
4. the high semi-conductor LED chips of light extraction efficiency according to claim 1, which is characterized in that the first electrode with
The second electrode is followed successively by n-electrode and p-electrode, alternatively, the first electrode and the second electrode are followed successively by p-electrode and n
Electrode.
5. the high semi-conductor LED chips of light extraction efficiency according to claim 1, which is characterized in that further include substrate, first
Conductive semiconductor layer, active layer, the second conductive semiconductor layer and conductive layer, first conductive semiconductor layer are deposited on the base
On plate, the surface of first conductive semiconductor layer far from substrate includes first area and second area, and the first electrode is heavy
On the first area, the active layer, the second conductive semiconductor layer, conductive layer and second electrode are sequentially deposited at product respectively
On the second area.
6. the high semi-conductor LED chips of light extraction efficiency according to claim 5, which is characterized in that the electric current transport layer
It is set between the second conductive semiconductor layer and transparency conducting layer.
7. the high semi-conductor LED chips of light extraction efficiency according to claim 5, which is characterized in that described first conductive half
The material of conductor layer and the second conductive semiconductor layer is respectively group iii nitride.
8. the high semi-conductor LED chips of light extraction efficiency according to claim 1, which is characterized in that the electric current transport layer
Material be at least one of graphene and nano silver.
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| CN106887490A (en) | 2017-06-23 |
| CN108565321B (en) | 2020-04-28 |
| CN106887490B (en) | 2018-04-20 |
| CN108565321A (en) | 2018-09-21 |
| CN108711586A (en) | 2018-10-26 |
| WO2018152917A1 (en) | 2018-08-30 |
| CN108417680A (en) | 2018-08-17 |
| CN108417680B (en) | 2020-04-28 |
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