CN103606617B - There is the inverted light-emitting diode (LED) of transparency electrode - Google Patents

There is the inverted light-emitting diode (LED) of transparency electrode Download PDF

Info

Publication number
CN103606617B
CN103606617B CN201310554175.2A CN201310554175A CN103606617B CN 103606617 B CN103606617 B CN 103606617B CN 201310554175 A CN201310554175 A CN 201310554175A CN 103606617 B CN103606617 B CN 103606617B
Authority
CN
China
Prior art keywords
layer
type semiconductor
emitting diode
semiconductor layer
led
Prior art date
Application number
CN201310554175.2A
Other languages
Chinese (zh)
Other versions
CN103606617A (en
Inventor
张翠
Original Assignee
溧阳市江大技术转移中心有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 溧阳市江大技术转移中心有限公司 filed Critical 溧阳市江大技术转移中心有限公司
Priority to CN201310554175.2A priority Critical patent/CN103606617B/en
Publication of CN103606617A publication Critical patent/CN103606617A/en
Application granted granted Critical
Publication of CN103606617B publication Critical patent/CN103606617B/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0016Processes relating to electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials

Abstract

The invention discloses a kind of inverted light-emitting diode (LED) with transparency electrode, including: bearing substrate (1);P-type reflecting electrode (2) on bearing substrate (1);P-type semiconductor layer (4) on p-type reflecting electrode (2);Active layer (5) in p-type semiconductor layer (4);N-type semiconductor layer (6) on active layer (5);And the transparent electrode layer (7) in n-type semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).The light emitting diode with transparency electrode that the method that the present invention proposes prepares can improve integrated level, Simplified flowsheet, it is not necessary to pin configuration, thus reducing manufacturing cost, and can improve light extraction efficiency, thus promoting whole lighting efficiency.

Description

There is the inverted light-emitting diode (LED) of transparency electrode

Technical field

The invention belongs to technical field of semiconductors, particularly to a kind of inverted light-emitting diode (LED) with transparency electrode.

Background technology

The advantage of semiconductor light-emitting-diode is in that luminous intensity is high, light directivity is strong, energy consumption is low, cheap for manufacturing cost etc., therefore its application is increasingly extensive, particularly has the trend of replacement electric filament lamp and fluorescent lamp in illumination.The advantage of upside-down mounting (flip-chip) formula light emitting diode is that heat dissipation characteristics is excellent and luminous efficiency is higher.And in recent years, in order to improve the brightness of light emitting diode, develop the light emitting diode of vertical stratification, relative to positive assembling structure, i.e. the light emitting diode of platform (mesa) structure, the light emitting diode of vertical stratification has plurality of advantages.Two electrodes of light emitting diode with vertical structure are respectively at the both sides of light emitting diode, and electric current almost all flows vertically through semiconductor epitaxial layers, it does not have the electric current of horizontal mobility, therefore homogeneous current distribution, the heat of generation is relatively fewer.And owing to two electrodes of vertical stratification are in both sides, therefore going out the stop that will not be subject to same lateral electrode in photoreduction process, its light extraction efficiency is higher.

But the light emitting diode of above-mentioned vertical stratification there is problems of, two electrodes are respectively at the both sides of light emitting diode, cause that integrated level is low, complex process, and also need to pin configuration.

Summary of the invention

In view of this, the present invention is directed to problem of the prior art, it is proposed that a kind of inverted light-emitting diode (LED) with transparency electrode.By the structure of the n-type electrode of this light emitting diode and p-type electrode and setting are improved, it is possible to increase integrated level, Simplified flowsheet, it is not necessary to pin configuration, thus reducing manufacturing cost.And the inverted light-emitting diode (LED) with transparency electrode of the present invention can improve light extraction efficiency, thus promoting whole lighting efficiency.

The inverted light-emitting diode (LED) with transparency electrode that the present invention proposes includes:

Bearing substrate (1);

P-type reflecting electrode (2) on bearing substrate (1);

P-type semiconductor layer (4) on p-type reflecting electrode (2);

Active layer (5) in p-type semiconductor layer (4);

N-type semiconductor layer (6) on active layer (5);And

Transparent electrode layer (7) in n-type semiconductor layer (6),

Wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).

Wherein part of p-type semiconductor layer (4) and p-type reflecting electrode (2) are by etching the ledge structure to form exposed portion active layer (5), have transparent insulating layer (3) in ledge structure;

Wherein the thickness of transparent insulating layer (3) is the thickness sum of p-type reflecting electrode (2) and p-type semiconductor layer (4), and this transparent insulating layer (3), active layer (5) and n-type semiconductor layer (6) flush with the side of transparent electrode layer (7) respectively, so that transparent insulating layer (3) is clamped between p-type reflecting electrode (2) and the p-type semiconductor layer (4) on the transparent electrode layer (7) of side and bearing substrate (1) that cover inverted light-emitting diode (LED), so that transparent electrode layer (7) is insulated from each other with p-type reflecting electrode (2) and p-type semiconductor layer (4), and transparent insulating layer (3) is Al2O3

Wherein transparent electrode layer (7) is ITO, ZnO, AZO, ATO, FTO, SnO2In the laminated film of a kind of or above-mentioned material.

Accompanying drawing explanation

Fig. 1 is the sectional view of the inverted light-emitting diode (LED) with transparency electrode of the present invention;

Fig. 2 is the sectional view in the manufacture of the inverted light-emitting diode (LED) with transparency electrode of the present invention;

Fig. 3 is the top view of the inverted light-emitting diode (LED) with transparency electrode in the manufacture of Fig. 2.

Detailed description of the invention

The inverted light-emitting diode (LED) with transparency electrode and the manufacture method thereof of the present invention is described in detail below with reference to Fig. 1-3.For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.

With reference first to Fig. 1, the inverted light-emitting diode (LED) with transparency electrode includes bearing substrate (1);P-type reflecting electrode (2) on bearing substrate (1);P-type semiconductor layer (4) on p-type reflecting electrode (2);Active layer (5) in p-type semiconductor layer (4);N-type semiconductor layer (6) on active layer (5);And the transparent electrode layer (7) in n-type semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).

Bearing substrate (1) can be the metal material with highly reflective, for instance the combination of Al, Au, Ag, Pt, Ni, Cu, Ti or above-mentioned metal material.

P-type reflecting electrode (2) is the metal material with highly reflective, for instance the multi-layered electrode combined of Al, Au, Ag, Pt, Ni, Cu, Ti or above-mentioned metal material.

The material of p-type semiconductor layer (4), active layer (5) and n-type semiconductor layer (6) is such as III-V race's semi-conducting material, for instance GaN, AlN, InGaN, AlGaN etc..

Transparent electrode layer (7) is transparent conductive oxide (TCO), can be specifically tin indium oxide (ITO), ZnO, AZO, ATO, FTO, SnO2Deng in the laminated film of one or more or above-mentioned material.

And as indicated in figs. 1 and 3, p-type reflecting electrode (2) and p-type semiconductor layer (4) area in a top view are less than the area of active layer (5) and n-type semiconductor layer (6), namely part of p-type reflecting electrode (2) and p-type semiconductor layer (4) is etched away by etching, thus exposed portion active layer (5), thus forming ledge structure, and in ledge structure, fill transparent insulating layer (3), for instance Al2O3.And transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED), referring specifically to Fig. 3, transparent electrode layer (7) covers the end face of inverted light-emitting diode (LED), namely cover whole n-type semiconductor layer (6), and cover the side of whole inverted light-emitting diode (LED), namely cover four sides of inverted light-emitting diode (LED).And transparent electrode layer (7) is as the n-electrode of inverted light-emitting diode (LED), and so that be used as between transparent electrode layer (7) and the p-type reflecting electrode (2) of the n-electrode of inverted light-emitting diode (LED) insulated from each other, to prevent short circuit, between transparent electrode layer (7) and the p-type reflecting electrode (2) of four sides of inverted light-emitting diode (LED), there is above-mentioned transparent insulating layer (3) covering.

The manufacture method of the inverted light-emitting diode (LED) with transparency electrode of the following description present invention.With specific reference to Fig. 1-2.

(1) provide growth substrates, sequentially form n-type semiconductor layer (6), active layer (5), p-type semiconductor layer (4) and p-type reflecting electrode (2) thereon;

(2) part of p-type semiconductor layer (4) and p-type reflecting electrode (2) are etched with exposed portion active layer (5), thus forming ledge structure;

(3) transparent insulation material is filled into ledge structure, thus forming transparent insulating layer (3);

(4) resulting structures is inverted, is disposed on bearing substrate (1), and peels off growth substrates, thus exposing n-type semiconductor layer (6);

(5) in the n-type semiconductor layer (6) exposed, transparent electrode layer (7) is formed;

(6) groove (8) is formed, it penetrates transparent electrode layer (7), n-type semiconductor layer (6), active layer (5), transparent insulating layer (3), and groove (8) has medial wall (8b) and lateral wall (8a);

(7) in groove (8), the transparent conductive material for transparent electrode layer (7) is filled, for instance ITO, ZnO, AZO, ATO, FTO, SnO2Deng in the laminated film of one or more or above-mentioned material;

(8) utilize lateral wall (8a) as cut-boundary, inverted light-emitting diode (LED) is cut, thus removing partially transparent electrode layer (7), n-type semiconductor layer (6), active layer (5), transparent insulating layer (3), thus all defining transparent electrode layer (7) on four sides and end face of whole inverted light-emitting diode (LED), it is consequently formed the inverted light-emitting diode (LED) with transparency electrode of the present invention.

So far, foregoing description has specifically understood the inverted light-emitting diode (LED) with transparency electrode and the manufacture method thereof of the present invention, relative to the light emitting diode that existing method prepares, the light emitting diode that the method that the present invention proposes prepares can improve integrated level, Simplified flowsheet, without pin configuration, thus reducing manufacturing cost.And the inverted light-emitting diode (LED) with transparency electrode of the present invention can improve light extraction efficiency, thus promoting whole lighting efficiency.Embodiment described above is only merely the preferred embodiments of the present invention, and it is not intended to limit the present invention.The present invention without departing from the spirit of the invention, can made any amendment, and protection scope of the present invention is being limited to the appended claims by those skilled in the art.

Claims (2)

1. there is an inverted light-emitting diode (LED) for transparency electrode, including:
Bearing substrate (1);
P-type reflecting electrode (2) on bearing substrate (1);
P-type semiconductor layer (4) on p-type reflecting electrode (2);
Active layer (5) in p-type semiconductor layer (4);
N-type semiconductor layer (6) on active layer (5);And
Transparent electrode layer (7) in n-type semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED);
Wherein part of p-type semiconductor layer (4) and p-type reflecting electrode (2) are by etching the ledge structure to form exposed portion active layer (5), have transparent insulating layer (3) in ledge structure;
Wherein the thickness of transparent insulating layer (3) is the thickness sum of p-type reflecting electrode (2) and p-type semiconductor layer (4), and this transparent insulating layer (3), active layer (5) and n-type semiconductor layer (6) flush with the side of transparent electrode layer (7) respectively, so that transparent insulating layer (3) is clamped between p-type reflecting electrode (2) and the p-type semiconductor layer (4) on the transparent electrode layer (7) of side and bearing substrate (1) that cover inverted light-emitting diode (LED), so that transparent electrode layer (7) is insulated from each other with p-type reflecting electrode (2) and p-type semiconductor layer (4), and transparent insulating layer (3) is Al2O3
2. inverted light-emitting diode (LED) according to claim 1, wherein transparent electrode layer (7) is ITO, ZnO, AZO, ATO, FTO, SnO2In the laminated film of a kind of or above-mentioned material.
CN201310554175.2A 2013-11-08 2013-11-08 There is the inverted light-emitting diode (LED) of transparency electrode CN103606617B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310554175.2A CN103606617B (en) 2013-11-08 2013-11-08 There is the inverted light-emitting diode (LED) of transparency electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310554175.2A CN103606617B (en) 2013-11-08 2013-11-08 There is the inverted light-emitting diode (LED) of transparency electrode

Publications (2)

Publication Number Publication Date
CN103606617A CN103606617A (en) 2014-02-26
CN103606617B true CN103606617B (en) 2016-06-29

Family

ID=50124831

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310554175.2A CN103606617B (en) 2013-11-08 2013-11-08 There is the inverted light-emitting diode (LED) of transparency electrode

Country Status (1)

Country Link
CN (1) CN103606617B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163673A (en) * 2010-02-18 2011-08-24 Lg伊诺特有限公司 Light emitting device and light emitting device package
CN102187483A (en) * 2009-02-19 2011-09-14 Lg伊诺特有限公司 Led and led package

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102187483A (en) * 2009-02-19 2011-09-14 Lg伊诺特有限公司 Led and led package
CN102163673A (en) * 2010-02-18 2011-08-24 Lg伊诺特有限公司 Light emitting device and light emitting device package

Also Published As

Publication number Publication date
CN103606617A (en) 2014-02-26

Similar Documents

Publication Publication Date Title
EP2408030B1 (en) Light emitting diode
JP5368088B2 (en) Light emitting diode and manufacturing method thereof
KR101081135B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
JP5847421B2 (en) Light emitting device, light emitting device package
CN102097569A (en) Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system
EP2244309A1 (en) Led package structure having the led and method for fabricating the led
US8823046B2 (en) Light emitting diode with a current concentrating structure
KR20120042500A (en) Semiconductor light emitting diode
KR101762324B1 (en) A light emitting device
TW201517301A (en) Light emitting diode structure
JP5858633B2 (en) Light emitting device, light emitting device package
KR101756333B1 (en) A light emitting device and a light emitting device package
CN102709420B (en) GaN-based LED
CN102237473B (en) Light emitting diode and manufacturing method thereof
US9219194B2 (en) Flip-chip light emitting diode and fabrication method
KR101150861B1 (en) Light emitting diode having multi-cell structure and its manufacturing method
JP5960436B2 (en) Light emitting device and light emitting device package
KR20140022640A (en) Semiconductor light emitting device and light emitting apparatus
US9054258B2 (en) Semiconductor light emitting device
JP5992179B2 (en) Light emitting element
US9337406B2 (en) GaN-based light emitting diode with current spreading structure
TWI480962B (en) Light-emitting diode package and wafer-level packaging process of a light-emitting diode
US20120241724A1 (en) Light emitting chip
US9548423B2 (en) Light-emitting device
KR101276053B1 (en) Semiconductor light emitting device and light emitting apparatus

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
C14 Grant of patent or utility model
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170726

Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182

Patentee after: Liyang Technology Development Center

Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67

Patentee before: LIYANG JIANGDA TECHNOLOGY TRANSFER CENTER CO., LTD.