CN103606617A - Flip-chip light emitting diode with transparent electrode - Google Patents
Flip-chip light emitting diode with transparent electrode Download PDFInfo
- Publication number
- CN103606617A CN103606617A CN201310554175.2A CN201310554175A CN103606617A CN 103606617 A CN103606617 A CN 103606617A CN 201310554175 A CN201310554175 A CN 201310554175A CN 103606617 A CN103606617 A CN 103606617A
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- Prior art keywords
- emitting diode
- layer
- led
- semiconductor layer
- transparent electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Abstract
The invention discloses a flip-chip light emitting diode with a transparent electrode. The flip-chip light emitting diode comprises a bearing substrate (1), a P-type reflection electrode (2) on the bearing substrate (1), a P-type semiconductor layer (4) on the P-type reflection electrode (2); an active layer (5) on the P-type semiconductor layer (4), an N-type semiconductor layer (6) on the active layer (5), and a transparent electrode layer (7) on the N-type semiconductor layer (6), wherein the transparent electrode layer (7) covers the top surface and the side surface of the whole flip-chip light emitting diode. The flip-chip light emitting diode with the transparent electrode, prepared by using a method provided by the invention, can enhance integration level, simplifies a process, and is free from a lead wire structure, so that the manufacturing cost is lowered, the light extraction efficiency is improved, and the overall luminescence efficiency is improved.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of inverted light-emitting diode (LED) with transparency electrode.
Background technology
The advantage of semiconductor light-emitting-diode is that luminous intensity is high, light directive property is strong, energy consumption is low, cheap for manufacturing cost etc., so its application is increasingly extensive, particularly aspect illumination, has the trend that replaces incandescent lamp and fluorescent lamp.The advantage of upside-down mounting (flip-chip) formula light-emitting diode is that heat dissipation characteristics is good and luminous efficiency is higher.And in recent years, in order to improve the brightness of light-emitting diode, developed the light-emitting diode of vertical stratification, with respect to positive assembling structure, i.e. the light-emitting diode of platform (mesa) structure, the light-emitting diode of vertical stratification has plurality of advantages.Two electrodes of light emitting diode with vertical structure are the both sides in light-emitting diode respectively, and electric current almost whole vertical currents is crossed semiconductor epitaxial layers, there is no the electric current of lateral flow, so CURRENT DISTRIBUTION is even, and the heat of generation is relatively less.And because two electrodes of vertical stratification are in both sides, therefore go out in photoreduction process and can not be subject to stopping of same lateral electrode, its light extraction efficiency is higher.
But the problem that the light-emitting diode of above-mentioned vertical stratification exists is, two electrodes are the both sides in light-emitting diode respectively, cause that integrated level is low, complex process, and also need pin configuration.
Summary of the invention
In view of this, the present invention is directed to the problem of prior art, proposed a kind of inverted light-emitting diode (LED) with transparency electrode.Structure and setting by the N-shaped electrode to this light-emitting diode and p-type electrode improve, and can improve integrated level, simplify technique, without pin configuration, thereby reduce manufacturing cost.And the inverted light-emitting diode (LED) with transparency electrode of the present invention can improve light and take out efficiency, thereby promote whole lighting efficiency.
The inverted light-emitting diode (LED) with transparency electrode that the present invention proposes comprises:
Bearing substrate (1);
P-type reflecting electrode (2) on bearing substrate (1);
P-type semiconductor layer (4) on p-type reflecting electrode (2);
Active layer (5) on p-type semiconductor layer (4);
N-shaped semiconductor layer (6) on active layer (5); And
Transparent electrode layer (7) on N-shaped semiconductor layer (6),
Wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).
Accompanying drawing explanation
Fig. 1 is the sectional view with the inverted light-emitting diode (LED) of transparency electrode of the present invention;
Fig. 2 is the sectional view in the manufacture of the inverted light-emitting diode (LED) with transparency electrode of the present invention;
Fig. 3 is the vertical view of the inverted light-emitting diode (LED) with transparency electrode in the manufacture of Fig. 2.
Embodiment
Below with reference to Fig. 1-3, describe inverted light-emitting diode (LED) and the manufacture method thereof with transparency electrode of the present invention in detail.For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.
First with reference to figure 1, the inverted light-emitting diode (LED) with transparency electrode comprises bearing substrate (1); P-type reflecting electrode (2) on bearing substrate (1); P-type semiconductor layer (4) on p-type reflecting electrode (2); Active layer (5) on p-type semiconductor layer (4); N-shaped semiconductor layer (6) on active layer (5); And the transparent electrode layer (7) on N-shaped semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).
Bearing substrate (1) can be the metal material with highly reflective, for example the combination of Al, Au, Ag, Pt, Ni, Cu, Ti or above-mentioned metal material.
P-type reflecting electrode (2) is the metal material with highly reflective, for example the multi-layered electrode combining of Al, Au, Ag, Pt, Ni, Cu, Ti or above-mentioned metal material.
The material of p-type semiconductor layer (4), active layer (5) and N-shaped semiconductor layer (6) is for example III-V family semi-conducting material, for example GaN, AlN, InGaN, AlGaN etc.
Transparent electrode layer (7) is transparent conductive oxide (TCO), can be specifically tin indium oxide (ITO), ZnO, AZO, ATO, FTO, SnO
2deng in the laminated film of one or more or above-mentioned material.
And as shown in Fig. 1 and 3, p-type reflecting electrode (2) and the area of p-type semiconductor layer (4) in vertical view are less than the area of active layer (5) and N-shaped semiconductor layer (6), by etching, etch away part p-type reflecting electrode (2) and p-type semiconductor layer (4), thereby exposed portions serve active layer (5), thereby formation ledge structure, and in ledge structure, fill transparent insulating layer (3), for example Al
2o
3.And transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED), specifically referring to Fig. 3, transparent electrode layer (7) covers the end face of inverted light-emitting diode (LED), namely cover whole N-shaped semiconductor layer (6), and cover the side of whole inverted light-emitting diode (LED), namely cover four sides of inverted light-emitting diode (LED).And transparent electrode layer (7) is as the n electrode of inverted light-emitting diode (LED), and in order to make as insulated from each other between the transparent electrode layer (7) of the n electrode of inverted light-emitting diode (LED) and p-type reflecting electrode (2), to prevent short circuit, there is above-mentioned transparent insulating layer (3) covering between the transparent electrode layer (7) of four sides of inverted light-emitting diode (LED) and p-type reflecting electrode (2).
The manufacture method with the inverted light-emitting diode (LED) of transparency electrode of the present invention is below described.Specifically with reference to Fig. 1-2.
(1) provide growth substrates, order forms N-shaped semiconductor layer (6), active layer (5), p-type semiconductor layer (4) and p-type reflecting electrode (2) thereon;
(2) part p-type semiconductor layer (4) and p-type reflecting electrode (2) are etched with to exposed portions serve active layer (5), thereby form ledge structure;
(3) transparent insulation material is filled into ledge structure, thereby forms transparent insulating layer (3);
(4) resulting structures is inverted, is arranged on bearing substrate (1) upper, and peels off growth substrates, thereby expose N-shaped semiconductor layer (6);
(5) at the upper transparent electrode layer (7) that forms of the N-shaped semiconductor layer (6) exposing;
(6) form groove (8), it penetrates transparent electrode layer (7), N-shaped semiconductor layer (6), active layer (5), transparent insulating layer (3), and groove (8) has madial wall (8b) and lateral wall (8a);
(7) in groove (8), fill the transparent conductive material for transparent electrode layer (7), for example ITO, ZnO, AZO, ATO, FTO, SnO
2deng in the laminated film of one or more or above-mentioned material;
(8) utilize lateral wall (8a) as cut-boundary, inverted light-emitting diode (LED) is cut, thereby remove partially transparent electrode layer (7), N-shaped semiconductor layer (6), active layer (5), transparent insulating layer (3), thereby on four sides of whole inverted light-emitting diode (LED) and end face, all formed transparent electrode layer (7), formed thus the inverted light-emitting diode (LED) with transparency electrode of the present invention.
So far, detailed explanation of foregoing description inverted light-emitting diode (LED) and the manufacture method thereof with transparency electrode of the present invention, the light-emitting diode making with respect to existing method, the light-emitting diode that the method that the present invention proposes makes can improve integrated level, simplify technique, without pin configuration, thereby reduce manufacturing cost.And the inverted light-emitting diode (LED) with transparency electrode of the present invention can improve light and take out efficiency, thereby promote whole lighting efficiency.The embodiment describing is above only the preferred embodiments of the present invention, and it is not intended to limit the present invention.Those skilled in the art are not departing under the prerequisite of spirit of the present invention, can make any modification to the present invention, and protection scope of the present invention are limited to the appended claims.
Claims (4)
1. an inverted light-emitting diode (LED) with transparency electrode, comprising:
Bearing substrate (1);
P-type reflecting electrode (2) on bearing substrate (1);
P-type semiconductor layer (4) on p-type reflecting electrode (2);
Active layer (5) on p-type semiconductor layer (4);
N-shaped semiconductor layer (6) on active layer (5); And
Transparent electrode layer (7) on N-shaped semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).
2. inverted light-emitting diode (LED) according to claim 1, wherein part p-type semiconductor layer (4) and p-type reflecting electrode (2), by being etched with the ledge structure that forms exposed portions serve active layer (5), have transparent insulating layer (3) in ledge structure.
3. inverted light-emitting diode (LED) according to claim 2, wherein transparent insulating layer (3) is clamped between the transparent electrode layer (7) and the p-type reflecting electrode (2) on bearing substrate (1) of the side that covers inverted light-emitting diode (LED), so that transparent electrode layer (7) is insulated from each other with p-type reflecting electrode (2), and transparent insulating layer (3) is for example Al
2o
3.
4. inverted light-emitting diode (LED) according to claim 3, wherein transparent electrode layer (7) is ITO, ZnO, AZO, ATO, FTO, SnO
2deng in the laminated film of one or more or above-mentioned material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554175.2A CN103606617B (en) | 2013-11-08 | 2013-11-08 | There is the inverted light-emitting diode (LED) of transparency electrode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554175.2A CN103606617B (en) | 2013-11-08 | 2013-11-08 | There is the inverted light-emitting diode (LED) of transparency electrode |
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| Publication Number | Publication Date |
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| CN103606617A true CN103606617A (en) | 2014-02-26 |
| CN103606617B CN103606617B (en) | 2016-06-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108140701A (en) * | 2015-10-22 | 2018-06-08 | 原子能和替代能源委员会 | Microelectronics diode with optimization active surface |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
| CN102163673A (en) * | 2010-02-18 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
| CN102187483A (en) * | 2009-02-19 | 2011-09-14 | Lg伊诺特有限公司 | Led and led package |
-
2013
- 2013-11-08 CN CN201310554175.2A patent/CN103606617B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
| CN102187483A (en) * | 2009-02-19 | 2011-09-14 | Lg伊诺特有限公司 | Led and led package |
| CN102163673A (en) * | 2010-02-18 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108140701A (en) * | 2015-10-22 | 2018-06-08 | 原子能和替代能源委员会 | Microelectronics diode with optimization active surface |
| CN108140701B (en) * | 2015-10-22 | 2021-07-27 | 原子能和替代能源委员会 | Microelectronic diode with optimized active surface |
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| Publication number | Publication date |
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| CN103606617B (en) | 2016-06-29 |
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Effective date of registration: 20170726 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG JIANGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |