CN103594592B - There is the inverted light-emitting diode (LED) of alligatoring transparency electrode - Google Patents
There is the inverted light-emitting diode (LED) of alligatoring transparency electrode Download PDFInfo
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- CN103594592B CN103594592B CN201310554460.4A CN201310554460A CN103594592B CN 103594592 B CN103594592 B CN 103594592B CN 201310554460 A CN201310554460 A CN 201310554460A CN 103594592 B CN103594592 B CN 103594592B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Abstract
The present invention discloses a kind of inverted light-emitting diode (LED) with alligatoring transparency electrode, comprising: bearing substrate (1); P-type reflection electrode (2) on bearing substrate (1); P-type semiconductor layer (4) in p-type reflection electrode (2); Active layer (5) in p-type semiconductor layer (4); N-type semiconductor layer (6) on active layer (5); And the transparent electrode layer (7) in n-type semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED), and the whole surface of transparent electrode layer (7) all has alligatoring structure (9). The photodiode with transparency electrode that the method that the present invention proposes obtains can improve integrated level, Simplified flowsheet, it is not necessary to lead-in wire structure, thus reduces manufacturing cost, and can improve light extraction efficiency, thus promotes whole lighting efficiency.
Description
Technical field
The invention belongs to technical field of semiconductors, in particular to a kind of inverted light-emitting diode (LED) with alligatoring transparency electrode.
Background technology
The advantage of semiconductor light-emitting-diode is luminous intensity height, light directive property is strong, energy consumption is low, cheap for manufacturing cost etc., therefore its application is increasingly extensive, particularly has the trend replacing incandescent light and luminescent lamp in illumination. The advantage of upside-down mounting (flip-chip) formula photodiode is that heat dissipation characteristics is excellent and luminous efficiency is higher. And in recent years, in order to improve the brightness of photodiode, develop the photodiode of vertical structure, relative to positive assembling structure, i.e. the photodiode of platform (mesa) structure, the photodiode of vertical structure has plurality of advantages. Two electrodes of light emitting diode with vertical structure are in the both sides of photodiode respectively, and electric current almost all flows vertically through semiconductor epitaxial layers, it does not have the electric current of transverse flow, and therefore distribution of current is even, and the heat of generation is relatively less. And owing to two electrodes of vertical structure are in both sides, therefore going out the stop that can not be subject to same lateral electrode in photoreduction process, its light extraction efficiency is higher.
But the photodiode Problems existing of above-mentioned vertical structure is that two electrodes are in the both sides of photodiode respectively, cause that integrated level is low, complex process, and also need lead-in wire structure, and light extraction efficiency is low.
Summary of the invention
In view of this, the present invention is directed to the problem of prior art, it is proposed that a kind of inverted light-emitting diode (LED) with alligatoring transparency electrode. By structure and the setting of the n-type electrode of this photodiode and p-type electrode being improved, it is possible to improve integrated level, Simplified flowsheet, it is not necessary to lead-in wire structure, thus reduce manufacturing cost. And the inverted light-emitting diode (LED) with transparency electrode of the present invention can improve light extraction efficiency, thus promote whole lighting efficiency.
The inverted light-emitting diode (LED) with alligatoring transparency electrode that the present invention proposes comprises:
Bearing substrate (1);
P-type reflection electrode (2) on bearing substrate (1);
P-type semiconductor layer (4) in p-type reflection electrode (2);
Active layer (5) in p-type semiconductor layer (4);
N-type semiconductor layer (6) on active layer (5); And
Transparent electrode layer (7) in n-type semiconductor layer (6),
Wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED), and the whole surface of transparent electrode layer (7) all has alligatoring structure (9);
Wherein the height of transparent insulating layer (3) is the height sum of p-type reflection electrode (2) with p-type semiconductor layer (4), and described transparent insulating layer (3) is positioned at the arranged beneath of active layer (5) in the whole side of described p-type reflection electrode (2) with p-type semiconductor layer (4), so that transparent insulating layer (3) is clamped between the side of transparent electrode layer (7) and the side of p-type reflection electrode (2) and the common formation of p-type semiconductor layer (4), so that transparent electrode layer (7) is insulated from each other with p-type reflection electrode (2), and transparent insulating layer (3) is Al2O3.
Accompanying drawing explanation
Fig. 1 is the sectional view of the inverted light-emitting diode (LED) with alligatoring transparency electrode of the present invention;
Fig. 2 is the sectional view in the manufacture of the inverted light-emitting diode (LED) with alligatoring transparency electrode of the present invention;
Fig. 3 is the vertical view of the inverted light-emitting diode (LED) with alligatoring transparency electrode in the manufacture of Fig. 2.
Embodiment
The inverted light-emitting diode (LED) with alligatoring transparency electrode and the manufacture method thereof of the present invention are described in detail below with reference to Fig. 1-3. For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.
With reference first to Fig. 1, the inverted light-emitting diode (LED) with alligatoring transparency electrode comprises bearing substrate (1); P-type reflection electrode (2) on bearing substrate (1); P-type semiconductor layer (4) in p-type reflection electrode (2); Active layer (5) in p-type semiconductor layer (4); N-type semiconductor layer (6) on active layer (5); And the transparent electrode layer (7) in n-type semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED), and the whole surface of transparent electrode layer (7) all has alligatoring structure (9).
Bearing substrate (1) can be the metallic substance with highly reflective, the combination of such as Al, Au, Ag, Pt, Ni, Cu, Ti or above-mentioned metallic substance.
P-type reflection electrode (2) is the metallic substance with highly reflective, the multi-layered electrode combined of such as Al, Au, Ag, Pt, Ni, Cu, Ti or above-mentioned metallic substance.
The material of p-type semiconductor layer (4), active layer (5) and n-type semiconductor layer (6) is such as III-V race's semiconductor material, such as GaN, AlN, InGaN, AlGaN etc.
Transparent electrode layer (7) is transparent conductive oxide (TCO), can be specifically the laminated film of one or more or the above-mentioned materials in tin indium oxide (ITO), ZnO, AZO, ATO, FTO, SnO2 etc.
And as indicated in figs. 1 and 3, p-type reflection electrode (2) and p-type semiconductor layer (4) area in a top view is less than active layer (5) and the area of n-type semiconductor layer (6), namely part p-type reflection electrode (2) and p-type semiconductor layer (4) is etched away by etching, thus exposed portion active layer (5), thus forming station stage structure, and in ledge structure, fill transparent insulating layer (3), such as Al2O3. And transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED), referring specifically to Fig. 3, transparent electrode layer (7) covers the end face of inverted light-emitting diode (LED), also it is exactly cover whole n-type semiconductor layer (6), and cover the side of whole inverted light-emitting diode (LED), also it is exactly four sides covering inverted light-emitting diode (LED). And transparent electrode layer (7) is as the n-electrode of inverted light-emitting diode (LED), and in order to make the transparent electrode layer (7) being used as the n-electrode of inverted light-emitting diode (LED) and p-type reflect between electrode (2) insulated from each other, to prevent short-circuit, between the transparent electrode layer (7) and p-type reflection electrode (2) of four sides of covering inverted light-emitting diode (LED), there is above-mentioned transparent insulating layer (3).
And the whole surface of transparent electrode layer (7) all has alligatoring structure (9), alligatoring structure (9) is formed as follows: will be spin-coated on the whole surface of transparent electrode layer (7) containing titanium nanoparticle dispersion liquid, thus form individual layer titanium nanoparticulate thin films; Individual layer titanium nanoparticulate thin films is dried, forms the mask layer of the individual layer titanium nanoparticle needed for ICP etching; Utilize the mask layer of individual layer titanium nanoparticle that transparent electrode layer (7) is carried out ICP etching, thus on the whole surface of transparent electrode layer (7), form alligatoring structure (9); Remove the mask layer of individual layer titanium nanoparticle. And the roughness Ra of alligatoring structure (9) is 1nm-10nm, it is preferable that 2.5nm, 3.5nm, 4.5nm, 6.5nm, 8.5nm, 9.5nm.
The manufacture method of the inverted light-emitting diode (LED) with alligatoring transparency electrode of the present invention is below described. With specific reference to Fig. 1-2.
(1) providing growth substrates, order forms n-type semiconductor layer (6), active layer (5), p-type semiconductor layer (4) and p-type reflection electrode (2) thereon;
(2) part p-type semiconductor layer (4) and p-type reflection electrode (2) are etched with exposed portion active layer (5), thus forming station stage structure;
(3) transparent insulation material is filled into ledge structure, thus forms transparent insulating layer (3);
(4) resulting structures is inverted, it is arranged on bearing substrate (1), and peels off growth substrates, thus expose n-type semiconductor layer (6);
(5) in the n-type semiconductor layer (6) exposed, transparent electrode layer (7) is formed;
(6) groove (8) is formed, it penetrates transparent electrode layer (7), n-type semiconductor layer (6), active layer (5), transparent insulating layer (3), and groove (8) has inner side-wall (8b) and outer side wall (8a);
(7) in groove (8), the transparent conductive material being used for transparent electrode layer (7) is filled, such as ITO, ZnO, AZO, ATO, FTO, SnO2Deng in the laminated film of one or more or above-mentioned materials;
(8) utilize outer side wall (8a) as cut-boundary, inverted light-emitting diode (LED) is cut, thus remove part transparent electrode layer (7), n-type semiconductor layer (6), active layer (5), transparent insulating layer (3), thus all define transparent electrode layer (7) on four sides and end face of whole inverted light-emitting diode (LED);
(9) the whole surface of transparent electrode layer (7) will be spin-coated on containing titanium nanoparticle dispersion liquid, thus form individual layer titanium nanoparticulate thin films; Individual layer titanium nanoparticulate thin films is dried, forms the mask layer of the individual layer titanium nanoparticle needed for ICP etching; Utilize the mask layer of individual layer titanium nanoparticle that transparent electrode layer (7) is carried out ICP etching, thus on the whole surface of transparent electrode layer (7), form alligatoring structure (9); Remove the mask layer of individual layer titanium nanoparticle. Thus form the inverted light-emitting diode (LED) with alligatoring transparency electrode of the present invention.
So far, foregoing description has specifically understood the inverted light-emitting diode (LED) with transparency electrode and the manufacture method thereof of the present invention, relative to the photodiode that existing method is obtained, the photodiode that the method that the present invention proposes obtains can improve integrated level, Simplified flowsheet, without the need to the structure that goes between, thus reduce manufacturing cost. And the inverted light-emitting diode (LED) with transparency electrode of the present invention can improve light extraction efficiency, thus promote whole lighting efficiency. The embodiment that front literary composition describes is only the preferred embodiments of the present invention, and it is not intended to limit the present invention. The present invention, under the prerequisite not departing from spirit of the present invention, can be made any amendment, and protection scope of the present invention is limited to the appended claims by those skilled in the art.
Claims (3)
1. an inverted light-emitting diode (LED) with alligatoring transparency electrode, comprising:
Bearing substrate (1);
P-type reflection electrode (2) on bearing substrate (1);
P-type semiconductor layer (4) in p-type reflection electrode (2);
Active layer (5) in p-type semiconductor layer (4);
N-type semiconductor layer (6) on active layer (5); And
Transparent electrode layer (7) in n-type semiconductor layer (6),
Wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED), and the whole surface of transparent electrode layer (7) all has alligatoring structure (9);
Wherein the height of transparent insulating layer (3) is the height sum of p-type reflection electrode (2) with p-type semiconductor layer (4), and described transparent insulating layer (3) is positioned at the arranged beneath of active layer (5) in the whole side of described p-type reflection electrode (2) with p-type semiconductor layer (4), so that transparent insulating layer (3) is clamped between the side of transparent electrode layer (7) and the side of p-type reflection electrode (2) and the common formation of p-type semiconductor layer (4), so that transparent electrode layer (7) is insulated from each other with p-type reflection electrode (2), and transparent insulating layer (3) is Al2O3��
2. inverted light-emitting diode (LED) according to claim 1, the roughness Ra of wherein alligatoring structure (9) is 1nm-10nm.
3. inverted light-emitting diode (LED) according to claim 2, wherein transparent electrode layer (7) is ITO, ZnO, AZO, ATO, FTO, SnO2In the laminated film of a kind of or above-mentioned materials.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310554460.4A CN103594592B (en) | 2013-11-08 | 2013-11-08 | There is the inverted light-emitting diode (LED) of alligatoring transparency electrode |
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| CN201310554460.4A CN103594592B (en) | 2013-11-08 | 2013-11-08 | There is the inverted light-emitting diode (LED) of alligatoring transparency electrode |
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| CN103594592A CN103594592A (en) | 2014-02-19 |
| CN103594592B true CN103594592B (en) | 2016-06-01 |
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Effective date of registration: 20170724 Address after: Li Cheng Zhen Dong Da Jie Liyang city of Jiangsu Province, Changzhou City, No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG JIANGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |