CN103606604B - A kind of manufacture method of light-emitting diode - Google Patents
A kind of manufacture method of light-emitting diode Download PDFInfo
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- CN103606604B CN103606604B CN201310551566.9A CN201310551566A CN103606604B CN 103606604 B CN103606604 B CN 103606604B CN 201310551566 A CN201310551566 A CN 201310551566A CN 103606604 B CN103606604 B CN 103606604B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 229910001020 Au alloy Inorganic materials 0.000 claims description 22
- 229910002704 AlGaN Inorganic materials 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 12
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910000629 Rh alloy Inorganic materials 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 80
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 34
- 229910002601 GaN Inorganic materials 0.000 description 33
- 229910017083 AlN Inorganic materials 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000013517 stratification Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of manufacture method of GaN base light-emitting diode, comprising: substrate (2) is provided; Substrate (2) back side is formed reflecting electrode (1); The front of substrate (2) is formed undoped GaN or AlN resilient coating (3); At undoped GaN or AlN resilient coating (3) upper formation GaN base epitaxial loayer ray structure; GaN base epitaxial loayer ray structure is formed ito transparent electrode layer (8); GaN base epitaxial loayer ray structure is formed multilayer p contact electrode (9-12); Multilayer p contact electrode (9-12) is formed bonding wire (13).GaN base light-emitting diode of the present invention has excellent electrical characteristics and luminous efficiency.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly the manufacture method of a kind of gallium nitride (GaN) based light-emitting diode.
Background technology
The advantage of semiconductor light-emitting-diode is that luminous intensity is high, light directive property is strong, energy consumption is low, cheap for manufacturing cost etc., therefore its application is increasingly extensive, in illumination, particularly there is the trend replacing incandescent lamp and fluorescent lamp, but also face some technical problems at present, such as, p type semiconductor layer adhesion in P-type electrode and LED epitaxial semiconductor structure is weak, ohm contact performance is inferior etc.This just hinders the further lifting of the electrical characteristics aspect of light-emitting diode.
In recent years, in order to improve the brightness of light-emitting diode, develop the light-emitting diode of vertical stratification, relative to positive assembling structure, i.e. the light-emitting diode of platform (mesa) structure, the light-emitting diode of vertical stratification has plurality of advantages.Two electrodes of light emitting diode with vertical structure are in the both sides of light-emitting diode respectively, and electric current almost all flows vertically through semiconductor epitaxial layers, do not have the electric current of lateral flow, therefore homogeneous current distribution, and the heat of generation is relatively less.And because two electrodes of vertical stratification are in both sides, therefore go out the stop that can not be subject to same lateral electrode in photoreduction process, its light extraction efficiency is higher.
The structure of existing comparatively common GaN base light-emitting diode is: Sapphire Substrate, be formed at undoped GaN on substrate or AlN resilient coating, the GaN base epitaxial loayer ray structure be formed on undoped GaN or AlN resilient coating, it comprises n-type GaN layer, active layer, p-type GaN contact layer and p-type AlGaN cover layer successively, be formed in the back of the body plated electrode at the Sapphire Substrate back side, it is used as n contact electrode, and is formed in the supratectal p contact electrode of p-type AlGaN.For p contact electrode, simple single layer electrode structure can be adopted.But in order to promote its contact conductivity further, and then promoting the overall electrical characteristics of light-emitting diode, preferably adopting double-deck and even multi-layer electrode structure, to improving electrodes conduct characteristic.But multi-layer electrode structure Problems existing is the coupling between each layer electrode structure, and bad and between multi-layer electrode structure and semiconductor epitaxial layers adhesiveness is inferior, cause the problem that the degeneration of light-emitting diode overall electrical characteristics is even even more serious.
Summary of the invention
In view of this, the present invention is directed to the problem of prior art, propose a kind of manufacture method of light-emitting diode.By improving the p contact electrode of this light-emitting diode, the electrical characteristics of light-emitting diode can be promoted, thus effectively improve the luminous efficiency of light-emitting diode.
The manufacture method of the GaN base light-emitting diode that the present invention proposes comprises:
Step 1: substrate 2 is provided;
Step 2: form reflecting electrode 1 on substrate 2 back side;
Step 3: form undoped GaN or AlN resilient coating 3 on the front of substrate 2;
Step 4: form GaN base epitaxial loayer ray structure on undoped GaN or AlN resilient coating 3;
Step 5: form ito transparent electrode layer 8 on GaN base epitaxial loayer ray structure;
Step 6: form multilayer p contact electrode 9-12 on GaN base epitaxial loayer ray structure.
Step 7: form bonding wire 13 on multilayer p contact electrode 9-12.
Accompanying drawing explanation
The overall structure of the GaN base light-emitting diode that accompanying drawing 1 proposes for the present invention.
Embodiment
Embodiment 1
Structure and the manufacture method thereof of GaN base light-emitting diode of the present invention is described in detail below with reference to Fig. 1.For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.
Step one: first provide substrate 2, the material of substrate 2 can be sapphire, carborundum, silicon, gallium nitride, GaAs, aluminium nitride, glass etc.
Step 2: at substrate 2 back side, namely evaporation or sputter reflecting electrode 1 on contrary with substrate 2 front of follow-up formation GaN base epitaxial loayer ray structure surface, reflecting electrode 1 is used as n contact electrode and has reflection function concurrently, and the material of reflecting electrode 1 is the metal with high reverse--bias characteristic of such as Al, Ag, Au, Pt etc.
Step 3: form resilient coating 3 on the front of substrate 2, the material of resilient coating 3 can be non-Doped GaN or AlN, it is for cushioning the lattice mismatch between substrate 2 and follow-up GaN base epitaxial loayer ray structure formed thereon, to improve the luminous efficiency of LED entirety.
Step 4: form GaN base epitaxial loayer ray structure on resilient coating 3, it comprises n-type GaN layer 4, active layer 5, p-type GaN contact layer 6 and p-type AlGaN cover layer 7 successively.
Step 5: subsequently, p-type AlGaN cover layer 7 is formed ito transparent electrode layer 8.Ito transparent electrode layer 8 is coated with photoresist (not shown), photoetching agent pattern (not shown) is formed through techniques such as development, exposures, this photoetching agent pattern has photoresist window region at the surface middle part of ito transparent electrode layer 8, and this photoresist window region is for the formation of running through ito transparent electrode layer 8 and bottom is arranged in the opening of p-type AlGaN cover layer 7.
Step 6: subsequently, the photoetching agent pattern of patterning is utilized to etch ito transparent electrode layer 8 and p-type AlGaN cover layer 7, engraving method is dry-etching or Wet-type etching etc., thus is formed and run through ito transparent electrode layer 8 and bottom is arranged in the opening of p-type AlGaN cover layer 7.The shape of this opening can be circle, ellipse, triangle, square, rectangle or other regular polygon, such as regular hexagon etc.And when opening is circular, its center of circle overlaps with the centre of surface of ito transparent electrode layer 8.Aperture area is the 20%-30% of ito transparent electrode layer 8 surface area, preferably 20%, more preferably 25%, and most preferably 30%.The bottom of opening is arranged in p-type AlGaN cover layer 7, that is opening gos deep into p-type AlGaN cover layer 7 certain depth, this degree of depth is that the surface contacted with p-type AlGaN cover layer 7 from ito transparent electrode layer 8 is counted, go deep into the degree of depth of p-type AlGaN cover layer 7 downwards, this depth bounds is 100 to 200nm, preferred 150nm, 160nm, 175nm, 185nm, 200nm.
Step 7: subsequently, by the method such as evaporation, sputtering, form multilayer p contact electrode 9-12 in the opening, this multilayer p contact electrode 9-12 is four-layer structure.Its formation method is below described in detail in detail.
First on opening bottom surface, form Ti metal adhesion layers 9, thickness is 50-100nm, preferred 75nm.It is conducive to the adhesion between multilayer p contact electrode 9-12 and p-type AlGaN cover layer 7.
On Ti metal adhesion layers 9, form Ti/Al alloy ohmic contact layer 10 subsequently, thickness is 65-120nm, preferred 100nm.
In Ti/Al alloy ohmic contact layer 10, form Al/Ti/Au alloy electrode layers 11 subsequently, thickness is 65-120nm, preferred 100nm.
On Al/Ti/Au alloy electrode layers 11, form Ti/Au/Rh alloy electrode layers 12 subsequently, thickness is 65-120nm, preferred 100nm.
Finally on Ti/Au/Rh alloy electrode layers 12, form bonding wire 13, it can be take Sn as the lead-free solder of main component, connects for outside lead.
So far the preparation of the GaN base light-emitting diode with multilayer p contact electrode 9-12 is completed, its general structure as shown in fig. 1, comprise reflecting electrode 1, substrate 2, undoped GaN or AlN resilient coating 3, n-type GaN layer 4, active layer 5, p-type GaN contact layer 6, p-type AlGaN cover layer 7, ito transparent electrode layer 8, wherein ito transparent electrode layer 8 has opening, this opening runs through ito transparent electrode layer 8 and open bottom is arranged in p-type AlGaN cover layer 7, bonding wire 13 on multilayer p contact electrode 9-12 in opening and multilayer p contact electrode 9-12, wherein multilayer p contact electrode 9-12 comprises four-layer structure, be followed successively by: Ti metal adhesion layers 9, Ti/Al alloy ohmic contact layer 10, Al/Ti/Au alloy electrode layers 11 and Ti/Au/Rh alloy electrode layers 12.
Embodiment 2
Structure and the manufacture process of the GaN base light-emitting diode of embodiment 2 are substantially the same manner as Example 1, and difference is composition and the thickness of each layer in multilayer p contact electrode 9-12.The main difference part of embodiment 2 with embodiment 1 will be described below, and repeat no more both identical structure and manufacture process.
Step one is identical with corresponding steps in embodiment 1 to six, illustrates from step 7:
Step 7: subsequently, by the method such as evaporation, sputtering, form multilayer p contact electrode 9-12 in the opening, this multilayer p contact electrode 9-12 is four-layer structure.Its formation method is below described in detail in detail.
First on opening bottom surface, form Ti metal adhesion layers 9, thickness is 50-100nm, preferred 75nm.It is conducive to the adhesion between multilayer p contact electrode 9-12 and p-type AlGaN cover layer 7.
On Ti metal adhesion layers 9, form Ni/AuBe alloy ohmic contact layer 10 subsequently, thickness is 75-120nm, preferred 110nm.
In Ni/AuBe alloy ohmic contact layer 10, form Al/Pt/Au alloy electrode layers 11 subsequently, thickness is 75-120nm, preferred 110nm.
On Al/Pt/Au alloy electrode layers 11, form Ti/Al/Rh/Pt/Au alloy electrode layers 12 subsequently, thickness is 75-120nm, preferred 110nm.
Finally on Ti/Al/Rh/Pt/Au alloy electrode layers 12, form bonding wire 13, it can be take Sn as the lead-free solder of main component, connects for outside lead.
So far the preparation of the GaN base light-emitting diode with multilayer p contact electrode 9-12 is completed, its general structure as shown in fig. 1, comprise reflecting electrode 1, substrate 2, undoped GaN or AlN resilient coating 3, n-type GaN layer 4, active layer 5, p-type GaN contact layer 6, p-type AlGaN cover layer 7, ito transparent electrode layer 8, wherein ito transparent electrode layer 8 has opening, this opening runs through ito transparent electrode layer 8 and open bottom is arranged in p-type AlGaN cover layer 7, bonding wire 13 on multilayer p contact electrode 9-12 in opening and multilayer p contact electrode 9-12, wherein multilayer p contact electrode 9-12 comprises four-layer structure, be followed successively by: Ti metal adhesion layers 9, Ni/AuBe alloy ohmic contact layer 10, Al/Pt/Au alloy electrode layers 11 and Ti/Al/Rh/Pt/Au alloy electrode layers 12.
So far, specifically understand GaN base light-emitting diode of the present invention and manufacture method thereof above, relative to the light-emitting diode that existing method is obtained, the multilayer p contact electrode of GaN base light-emitting diode of the present invention can keep good electrical characteristics and and semiconductor extension structure between good adhesion, and then promote the luminous efficiency of GaN base light-emitting diode.Embodiment mentioned above is only the preferred embodiments of the present invention, and it is intended to that the present invention will be described but not limits it.When not departing from the spirit and scope of claims of the present invention, those skilled in the art obviously can make any changes and improvements to the present invention, and protection scope of the present invention is limited by claims.
Claims (4)
1. a manufacture method for GaN base light-emitting diode, comprising:
Step 1: substrate (2) is provided;
Step 2: form reflecting electrode (1) on substrate (2) back side;
Step 3: form undoped GaN or AlN resilient coating (3) on the front of substrate (2);
Step 4: at undoped GaN or AlN resilient coating (3) upper formation GaN base epitaxial loayer ray structure;
Step 5: form ito transparent electrode layer (8) on GaN base epitaxial loayer ray structure;
Step 6: form multilayer p contact electrode (9-12) on GaN base epitaxial loayer ray structure;
Formation multilayer p contact electrode (9-12) wherein in step 6 comprises the steps:
Ito transparent electrode layer (8) is coated with photoresist, photoetching agent pattern is formed through development or exposure technology, this photoetching agent pattern has photoresist window region at the surface middle part of ito transparent electrode layer (8), and this photoresist window region is for the formation of running through ito transparent electrode layer (8) and bottom is arranged in the opening of p-type AlGaN cover layer (7);
Utilize the photoetching agent pattern of patterning to carry out dry-etching or Wet-type etching to ito transparent electrode layer (8) and p-type AlGaN cover layer (7), thus formed and run through ito transparent electrode layer (8) and bottom is arranged in the opening of p-type AlGaN cover layer (7);
By evaporation or sputtering method, form multilayer p contact electrode (9-12) in the opening, this multilayer p contact electrode (9-12) is four-layer structure, is followed successively by: Ti metal adhesion layers (9), Ti/Al alloy ohmic contact layer (10), Al/Ti/Au alloy electrode layers (11) and Ti/Au/Rh alloy electrode layers (12);
Or be followed successively by: Ti metal adhesion layers (9), Ni/AuBe alloy ohmic contact layer (10), Al/Pt/Au alloy electrode layers (11) and Ti/Al/Rh/Pt/Au alloy electrode layers (12);
Step 7: form bonding wire (13) on multilayer p contact electrode (9-12).
2. the manufacture method of GaN base light-emitting diode according to claim 1, is characterised in that:
Formation GaN base epitaxial loayer ray structure wherein in step 4 comprises formation n-type GaN layer (4), active layer (5), p-type GaN contact layer (6) and p-type AlGaN cover layer (7) successively.
3. the manufacture method of GaN base light-emitting diode according to claim 1, is characterised in that:
The forming step of the p contact electrode (9-12) of four-layer structure is:
First on opening bottom surface, form Ti metal adhesion layers (9), thickness is 50-100nm;
Subsequently at Ti metal adhesion layers (9) upper formation Ti/Al alloy ohmic contact layer (10), thickness is 65-120nm;
Subsequently in Ti/Al alloy ohmic contact layer (10) upper formation Al/Ti/Au alloy electrode layers (11), thickness is 65-120nm;
Subsequently at Al/Ti/Au alloy electrode layers (11) upper formation Ti/Au/Rh alloy electrode layers (12), thickness is 65-120nm.
4. the manufacture method of GaN base light-emitting diode according to claim 1, is characterised in that:
The forming step of the p contact electrode (9-12) of four-layer structure is:
First on opening bottom surface, form Ti metal adhesion layers (9), thickness is 50-100nm;
Subsequently at Ti metal adhesion layers (9) upper formation Ni/AuBe alloy ohmic contact layer (10), thickness is 75-120nm;
Subsequently in Ni/AuBe alloy ohmic contact layer (10) upper formation Al/Pt/Au alloy electrode layers (11), thickness is 75-120nm;
Subsequently at Al/Pt/Au alloy electrode layers (11) upper formation Ti/Al/Rh/Pt/Au alloy electrode layers (12), thickness is 75-120nm.
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| CN103606604B true CN103606604B (en) | 2016-04-06 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1744337A (en) * | 2004-08-31 | 2006-03-08 | 夏普株式会社 | Nitride-based compound semiconductor light emitting device |
| CN101180743A (en) * | 2005-05-24 | 2008-05-14 | 罗姆股份有限公司 | Nitride semiconductor light emitting element |
| CN103078027A (en) * | 2013-01-31 | 2013-05-01 | 武汉迪源光电科技有限公司 | Light emitting diode with current barrier layer |
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| JP3494478B2 (en) * | 1994-08-22 | 2004-02-09 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1744337A (en) * | 2004-08-31 | 2006-03-08 | 夏普株式会社 | Nitride-based compound semiconductor light emitting device |
| CN101180743A (en) * | 2005-05-24 | 2008-05-14 | 罗姆股份有限公司 | Nitride semiconductor light emitting element |
| CN103078027A (en) * | 2013-01-31 | 2013-05-01 | 武汉迪源光电科技有限公司 | Light emitting diode with current barrier layer |
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Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG JIANGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |
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