CN103594598A - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN103594598A CN103594598A CN201310551576.2A CN201310551576A CN103594598A CN 103594598 A CN103594598 A CN 103594598A CN 201310551576 A CN201310551576 A CN 201310551576A CN 103594598 A CN103594598 A CN 103594598A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a GaN base light emitting diode which comprises a reflecting electrode (1), a substrate (2), a non-adulteration GaN or AlN buffering layer (3), an n-type GaN layer (4), an active layer (5), a p-type GaN contact layer (6), a p-type AlGaN covering layer (7) and an ITO transparent electrode layer (8). The ITO transparent electrode layer (8) is provided with an opening which penetrates through the ITO transparent electrode layer (8), the bottom of the opening is placed in the p-type AlGaN covering layer (7), and multiple layers of p contact electrodes (9-12) and bonding leads (13) of the p contact electrodes are formed in the opening. The GaN base light emitting diode has excellent electrical characteristics and high light-emitting efficiency.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly a kind of gallium nitride (GaN) based light-emitting diode.
Background technology
The advantage of semiconductor light-emitting-diode is that luminous intensity is high, light directive property is strong, energy consumption is low, cheap for manufacturing cost etc., therefore its application is increasingly extensive, particularly aspect illumination, there is the trend that replaces incandescent lamp and fluorescent lamp, but also face at present some technical problems, for example the p type semiconductor layer adhesion in P type electrode and LED epitaxial semiconductor structure is weak, ohm contact performance is inferior etc.This has just hindered the further lifting of the electrical characteristics aspect of light-emitting diode.
In recent years, in order to improve the brightness of light-emitting diode, developed the light-emitting diode of vertical stratification, with respect to positive assembling structure, i.e. the light-emitting diode of platform (mesa) structure, the light-emitting diode of vertical stratification has plurality of advantages.Two electrodes of light emitting diode with vertical structure are the both sides in light-emitting diode respectively, and electric current almost whole vertical currents is crossed semiconductor epitaxial layers, there is no the electric current of lateral flow, so CURRENT DISTRIBUTION is even, and the heat of generation is relatively less.And because two electrodes of vertical stratification are in both sides, therefore go out in photoreduction process and can not be subject to stopping of same lateral electrode, its light extraction efficiency is higher.
The structure of existing comparatively common GaN based light-emitting diode is: Sapphire Substrate, be formed at non-Doped GaN or AlN resilient coating on substrate, be formed at the GaN base epitaxial loayer ray structure on non-Doped GaN or AlN resilient coating, it comprises N-shaped GaN layer, active layer, p-type GaN contact layer and p-type AlGaN cover layer successively, be formed on the back of the body plated electrode at the Sapphire Substrate back side, it is used as n contact electrode, and is formed on the supratectal p contact electrode of p-type AlGaN.For p contact electrode, can adopt simple single-layer electrodes structure.But in order further to promote its contact conductivity, and then promote the whole electrical characteristics of light-emitting diode, preferably adopt bilayer and even multi-layer electrode structure, to improving electrodes conduct characteristic.But the problem that multi-layer electrode structure exists to be the coupling between each layer of electrode structure bad and multi-layer electrode structure and semiconductor epitaxial layers between adhesiveness inferior, cause the whole electrical characteristics of the light-emitting diode even even more serious problem of degenerating.
Summary of the invention
In view of this, the present invention is directed to the problem of prior art, proposed a kind of light-emitting diode.By the p contact electrode to this light-emitting diode, improve, can promote the electrical characteristics of light-emitting diode, thereby effectively improve the luminous efficiency of light-emitting diode.
The GaN based light-emitting diode that the present invention proposes comprises:
Be formed at the reflecting electrode 1 at substrate 2 back sides, it is as n contact electrode;
Be formed at non-Doped GaN or AlN resilient coating 3 on substrate 2 fronts;
Be formed at the GaN base epitaxial loayer ray structure on non-Doped GaN or AlN resilient coating 3, it comprises N-shaped GaN layer 4, active layer 5, p-type GaN contact layer 6 and p-type AlGaN cover layer 7 successively;
Be formed on the ito transparent electrode layer 8 on the p-type AlGaN cover layer 7 of GaN base epitaxial loayer ray structure, wherein ito transparent electrode layer 8 has opening, and this opening runs through ito transparent electrode layer 8 and open bottom is arranged in p-type AlGaN cover layer 7;
Be formed on the multilayer p contact electrode 9-12 in opening; And
Be formed on the bonding wire 13 on multilayer p contact electrode 9-12.
Accompanying drawing explanation
Accompanying drawing 1 is the overall structure of the GaN based light-emitting diode of the present invention's proposition.
Embodiment
Below with reference to Fig. 1, describe structure and the manufacture method thereof of GaN based light-emitting diode of the present invention in detail.For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.
Step 1: first substrate 2 is provided, and the material of substrate 2 can be sapphire, carborundum, silicon, gallium nitride, GaAs, aluminium nitride, glass etc.
Step 2: at substrate 2 back sides, with evaporation or sputter reflecting electrode 1 on the positive contrary surface of substrate 2 of follow-up formation GaN base epitaxial loayer ray structure, reflecting electrode 1 is as n contact electrode and have reflection function concurrently, and the material of reflecting electrode 1 is the metal with high reflection characteristic such as Al, Ag, Au, Pt etc.
Step 3: form resilient coating 3 on the front of substrate 2, the material of resilient coating 3 can be non-Doped GaN or AlN, it is for cushioning the lattice mismatch between substrate 2 and follow-up GaN base epitaxial loayer ray structure formed thereon, to improve the luminous efficiency of LED integral body.
Step 4: form GaN base epitaxial loayer ray structure on resilient coating 3, it comprises N-shaped GaN layer 4, active layer 5, p-type GaN contact layer 6 and p-type AlGaN cover layer 7 successively.
Step 5: subsequently, form ito transparent electrode layer 8 on p-type AlGaN cover layer 7.On ito transparent electrode layer 8, be coated with photoresist (not shown), through techniques such as development, exposures, form photoetching agent pattern (not shown), this photoetching agent pattern has photoresist window region at the surface middle part of ito transparent electrode layer 8, and this photoresist window region is used to form runs through the opening that ito transparent electrode layer 8 and bottom are arranged in p-type AlGaN cover layer 7.
Step 6: subsequently, utilize the photoetching agent pattern of patterning to carry out etching to ito transparent electrode layer 8 and p-type AlGaN cover layer 7, engraving method is dry-etching or Wet-type etching etc., thereby form, runs through the opening that ito transparent electrode layer 8 and bottom are arranged in p-type AlGaN cover layer 7.The shape of this opening can be circle, ellipse, triangle, square, rectangle or other regular polygon shape, for example regular hexagon etc.And when opening is circle, its center of circle overlaps with the centre of surface of ito transparent electrode layer 8.Aperture area is the 20%-30% of ito transparent electrode layer 8 surface area, preferably 20%, more preferably 25%, and most preferably 30%.The bottom of opening is arranged in p-type AlGaN cover layer 7, that is to say that opening gos deep into p-type AlGaN cover layer 7 certain depths, and this degree of depth is to count with the surface that p-type AlGaN cover layer 7 contacts from ito transparent electrode layer 8, gos deep into the degree of depth of p-type AlGaN cover layer 7 downwards.This depth bounds is 100 to 200nm, preferred 150nm, 160nm, 175nm, 185nm, 200nm.
Step 7: subsequently, by methods such as evaporation, sputters, form multilayer p contact electrode 9-12 in opening, this multilayer p contact electrode 9-12 is four-layer structure.Its formation method is below described in detail in detail.
First on opening bottom surface, form Ti metal adhesion layer 9, thickness is 50-100nm, preferably 75nm.It is conducive to the adhesion between multilayer p contact electrode 9-12 and p-type AlGaN cover layer 7.
On Ti metal adhesion layer 9, form Ti/Al alloy ohmic contact layer 10 subsequently, thickness is 65-120nm, preferably 100nm.
In Ti/Al alloy ohmic contact layer 10, form subsequently Al/Ti/Au alloy electrode layer 11, thickness is 65-120nm, preferably 100nm.
On Al/Ti/Au alloy electrode layer 11, form subsequently Ti/Au/Rh alloy electrode layer 12, thickness is 65-120nm, preferably 100nm.
Finally on Ti/Au/Rh alloy electrode layer 12, form bonding wire 13, it can be to take the lead-free solder that Sn is main component, for outside lead, connects.
So far complete the preparation of the GaN based light-emitting diode with multilayer p contact electrode 9-12, its general structure as shown in fig. 1, comprise reflecting electrode 1, substrate 2, non-Doped GaN or AlN resilient coating 3, N-shaped GaN layer 4, active layer 5, p-type GaN contact layer 6, p-type AlGaN cover layer 7, ito transparent electrode layer 8, wherein ito transparent electrode layer 8 has opening, this opening runs through ito transparent electrode layer 8 and open bottom is arranged in p-type AlGaN cover layer 7, bonding wire 13 on multilayer p contact electrode 9-12 in opening and multilayer p contact electrode 9-12, wherein multilayer p contact electrode 9-12 comprises four-layer structure, be followed successively by: Ti metal adhesion layer 9, Ti/Al alloy ohmic contact layer 10, Al/Ti/Au alloy electrode layer 11 and Ti/Au/Rh alloy electrode layer 12.
Structure and the manufacture process of the GaN based light-emitting diode of embodiment 2 are substantially the same manner as Example 1, and difference is composition and the thickness of each layer in multilayer p contact electrode 9-12.To the main difference part of embodiment 2 with embodiment 1 be described below, and repeat no more both identical structure and manufacture process.
Step 7: subsequently, by methods such as evaporation, sputters, form multilayer p contact electrode 9-12 in opening, this multilayer p contact electrode 9-12 is four-layer structure.Its formation method is below described in detail in detail.
First on opening bottom surface, form Ti metal adhesion layer 9, thickness is 50-100nm, preferably 75nm.It is conducive to the adhesion between multilayer p contact electrode 9-12 and p-type AlGaN cover layer 7.
On Ti metal adhesion layer 9, form Ni/AuBe alloy ohmic contact layer 10 subsequently, thickness is 75-120nm, preferably 110nm.
In Ni/AuBe alloy ohmic contact layer 10, form subsequently Al/Pt/Au alloy electrode layer 11, thickness is 75-120nm, preferably 110nm.
On Al/Pt/Au alloy electrode layer 11, form subsequently Ti/Al/Rh/Pt/Au alloy electrode layer 12, thickness is 75-120nm, preferably 110nm.
Finally on Ti/Al/Rh/Pt/Au alloy electrode layer 12, form bonding wire 13, it can be to take the lead-free solder that Sn is main component, for outside lead, connects.
So far complete the preparation of the GaN based light-emitting diode with multilayer p contact electrode 9-12, its general structure as shown in fig. 1, comprise reflecting electrode 1, substrate 2, non-Doped GaN or AlN resilient coating 3, N-shaped GaN layer 4, active layer 5, p-type GaN contact layer 6, p-type AlGaN cover layer 7, ito transparent electrode layer 8, wherein ito transparent electrode layer 8 has opening, this opening runs through ito transparent electrode layer 8 and open bottom is arranged in p-type AlGaN cover layer 7, bonding wire 13 on multilayer p contact electrode 9-12 in opening and multilayer p contact electrode 9-12, wherein multilayer p contact electrode 9-12 comprises four-layer structure, be followed successively by: Ti metal adhesion layer 9, Ni/AuBe alloy ohmic contact layer 10, Al/Pt/Au alloy electrode layer 11 and Ti/Al/Rh/Pt/Au alloy electrode layer 12.
So far, detailed explanation above GaN based light-emitting diode of the present invention and manufacture method thereof, the light-emitting diode making with respect to existing method, the multilayer p contact electrode of GaN based light-emitting diode of the present invention can keep good electrical characteristics and and semiconductor epitaxial structure between good adhesion, and then promote the luminous efficiency of GaN based light-emitting diode.Embodiment mentioned above is only the preferred embodiments of the present invention, and it is intended to that the present invention will be described but not it is limited.In the situation that do not depart from the spirit and scope of claims of the present invention, those skilled in the art obviously can make any changes and improvements to the present invention, and protection scope of the present invention is limited by claims.
Claims (6)
1. a GaN based light-emitting diode, comprising:
Substrate (2);
Be formed at the reflecting electrode (1) at substrate (2) back side, it is as n contact electrode;
Be formed at non-Doped GaN or AlN resilient coating (3) on substrate (2) front;
Be formed at the GaN base epitaxial loayer ray structure on non-Doped GaN or AlN resilient coating (3);
Be formed on the ito transparent electrode layer (8) on GaN base epitaxial loayer ray structure;
Be formed on the multilayer p contact electrode (9-12) on GaN base epitaxial loayer ray structure; And
Be formed on the bonding wire (13) on multilayer p contact electrode (9-12).
2. GaN based light-emitting diode according to claim 1, is characterised in that:
Wherein GaN base epitaxial loayer ray structure comprises N-shaped GaN layer (4), active layer (5), p-type GaN contact layer (6) and p-type AlGaN cover layer (7) successively.
3. GaN based light-emitting diode according to claim 2, is characterised in that:
Wherein ito transparent electrode layer (8) has opening, and this opening runs through ito transparent electrode layer (8) and open bottom is arranged in p-type AlGaN cover layer (7), and multilayer p contact electrode (9-12) is formed in opening.
4. GaN based light-emitting diode according to claim 3, is characterised in that:
The shape of its split shed is circle, ellipse, triangle, square, rectangle or regular hexagon;
And when opening is circle, its center of circle overlaps with the centre of surface of ito transparent electrode layer (8);
Aperture area is the 20%-30% of ito transparent electrode layer (8) surface area, preferably 20%, more preferably 25%, and most preferably 30%;
The bottom of opening is arranged in p-type AlGaN cover layer (7), and it is 100 to 200nm that opening gos deep into depth bounds in p-type AlGaN cover layer (7), preferred 150nm, 160nm, 175nm, 185nm, 200nm.
5. GaN based light-emitting diode according to claim 4, is characterised in that:
Wherein multilayer p contact electrode (9-12) is four-layer structure, is followed successively by: Ti metal adhesion layer (9), Ti/Al alloy ohmic contact layer (10), Al/Ti/Au alloy electrode layer (11) and Ti/Au/Rh alloy electrode layer (12),
Wherein the thickness of Ti metal adhesion layer (9) is 50-100nm, preferably 75nm;
The thickness of Ti/Al alloy ohmic contact layer (10) is 65-120nm, preferably 100nm;
The thickness of Al/Ti/Au alloy electrode layer (11) is 65-120nm, preferably 100nm;
The thickness of Ti/Au/Rh alloy electrode layer (12) is 65-120nm, preferably 100nm.
6. GaN based light-emitting diode according to claim 5, is characterised in that:
Wherein multilayer p contact electrode (9-12) is four-layer structure, is followed successively by: Ti metal adhesion layer (9), Ni/AuBe alloy ohmic contact layer (10), Al/Pt/Au alloy electrode layer (11) and Ti/Al/Rh/Pt/Au alloy electrode layer (12),
Wherein the thickness of Ti metal adhesion layer (9) is 50-100nm, preferably 75nm;
The thickness of Ni/AuBe alloy ohmic contact layer (10) is 75-120nm, preferably 110nm;
The thickness of Al/Pt/Au alloy electrode layer (11) is 75-120nm, preferably 110nm;
The thickness of Ti/Al/Rh/Pt/Au alloy electrode layer (12) is 75-120nm, preferably 110nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310551576.2A CN103594598A (en) | 2013-11-07 | 2013-11-07 | Light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310551576.2A CN103594598A (en) | 2013-11-07 | 2013-11-07 | Light emitting diode |
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| CN103594598A true CN103594598A (en) | 2014-02-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931617A (en) * | 2019-12-18 | 2020-03-27 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | P-type composite electrode material of GaN-based LED (light-emitting diode) suitable for aluminum wire pressure welding and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101371370A (en) * | 2005-10-29 | 2009-02-18 | 三星电子株式会社 | Semiconductor device and method of fabricating the same |
| CN103078027A (en) * | 2013-01-31 | 2013-05-01 | 武汉迪源光电科技有限公司 | Light emitting diode with current barrier layer |
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2013
- 2013-11-07 CN CN201310551576.2A patent/CN103594598A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101371370A (en) * | 2005-10-29 | 2009-02-18 | 三星电子株式会社 | Semiconductor device and method of fabricating the same |
| CN103078027A (en) * | 2013-01-31 | 2013-05-01 | 武汉迪源光电科技有限公司 | Light emitting diode with current barrier layer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931617A (en) * | 2019-12-18 | 2020-03-27 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | P-type composite electrode material of GaN-based LED (light-emitting diode) suitable for aluminum wire pressure welding and preparation method thereof |
| CN110931617B (en) * | 2019-12-18 | 2021-08-13 | 天津职业技术师范大学(中国职业培训指导教师进修中心) | P-type composite electrode material of GaN-based LED (light-emitting diode) suitable for aluminum wire pressure welding and preparation method thereof |
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Application publication date: 20140219 |