CN105374908B - A kind of blue green LED chip manufacture craft - Google Patents
A kind of blue green LED chip manufacture craft Download PDFInfo
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- CN105374908B CN105374908B CN201510649507.4A CN201510649507A CN105374908B CN 105374908 B CN105374908 B CN 105374908B CN 201510649507 A CN201510649507 A CN 201510649507A CN 105374908 B CN105374908 B CN 105374908B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Abstract
The present invention discloses a kind of blue green LED chip manufacture craft, and unintentional doped layer, the first n-type conductive layer, the first current barrier layer, the first n-contact layer, the second current barrier layer, the second n-contact layer, the 3rd current barrier layer, the second n-type conductive layer, active area, limiting layer, p-type electric-conducting layer and P type contact layer are sequentially generated on substrate；Mask, photoetching, ICP are etched to n-type conductive layer in P type contact layer；Mask, photoetching on the second exposed n-type conductive layer, the 3rd current barrier layer, the surface of exposed second n-contact layer are worn using ICP etchings；In exposed the second n-contact layer surface mask, photoetching again, the second current barrier layer, the surface of exposed first n-contact layer are worn using ICP etchings；Mask, photoetching P type contact layer, ITO conductive layer is deposited in exposed P type contact layer；Make p-electrode and n-electrode.The present invention can improve current expansion effect, improve the luminous efficiency of light emitting diode.
Description
Technical field
The present invention relates to LED technology field, a kind of blue green LED chip manufacture craft is referred in particular to.
Background technology
Light emitting diode is because its low-power consumption, size are small and reliability is high and swift and violent hair is obtained as main light source
Exhibition.Especially the utilization field of light emitting diode rapidly extends nearly ten years.Improve brightness and reduce light emitting diode
Cost turns into the target that LED field develops.
In the prior art, blue green LED chip includes p areas, n areas and active area, and active area is arranged on p areas and n areas
Between, p-electrode is set on the conductive layer in p areas.N areas, which are included on substrate, sets unintentional doped layer, in unintentional doped layer
Active area is set on upper setting n-type conductive layer, the n-type conductive layer.
In traditional making blue green LED chip technology, ICP is etched to n-type conductive layer, is steamed on n-type conductive layer
Plating metal manufactures n-type electrode.Contacted using single layer of n-type conductive layer with n-electrode, and be plane between n-electrode and n-type conductive layer
Contact, without using stepped contact.Have a disadvantage in that：
One, single layer of n-type conductive layer is contacted with n-electrode so that the thickness of n-type conductive layer is thicker, extends the epitaxial growth time,
Reduce production efficiency.
Two, single layer of n-type conductive layer is contacted with n-electrode, it is impossible to by the change of epitaxial material or doping with the Europe of n-electrode
Nurse contact gradual change type change so that current expansion effect is poor, and the luminous efficiency of diode is relatively low.
The content of the invention
It is an object of the invention to provide a kind of blue green LED chip manufacture craft, to improve current expansion effect
Really, so improve light emitting diode luminous efficiency.
To reach above-mentioned purpose, solution of the invention is：
A kind of blue green LED chip manufacture craft, comprises the following steps：
One, unintentional doped layer, the first n-type conductive layer, the first current barrier layer, first are sequentially generated in epitaxial substrate
N-contact layer, the second current barrier layer, the second n-contact layer, the 3rd current barrier layer, the second n-type conductive layer, active area, limit
Preparative layer, p-type electric-conducting layer and P type contact layer；
Two, mask, photoetching, ICP are etched to the second n-type conductive layer being connected with active area in P type contact layer；
Three, mask, photoetching on the exposed n-type conductive layer being connected with active area are etched using the ICP with element detection
Wear the 3rd current barrier layer, the surface of the exposed n-contact layer of part second；
Four, in exposed the second n-contact layer surface mask, photoetching again, second is worn using the ICP etchings with element detection
Current barrier layer, the surface of the exposed n-contact layer of part first；
Five, ITO conductive layer is deposited in exposed P type contact layer in mask, photoetching P type contact layer；
Six, all photoresists in surface, then mask, photoetching are removed, p-electrode is made on ITO conductive layer, is connected with active area
N-electrode is set in the second n-type conductive layer, the second n-contact layer and the first n-contact layer connect；
Seven, generate electrode isolation layers between n-electrode and active area and p areas.
Further, n-type conductive layer, the second n-contact layer and the first n-contact layer that n-electrode is connected with active area it
Between stepped contact surface is set.
A kind of blue green LED chip, including p areas, n areas and active area, active area are arranged between p areas and n areas,
P-electrode is set on the conductive layer in p areas；N areas epitaxial structure is used replaces the multistage constituted with current barrier layer by n-contact layer
Composite contact layer, sets the n-electrode of multiple contact surfaces on multistage composite contact layer.
Further, form that stepped multiple current expansion effects are different to be connect between n-electrode and multistage composite contact layer
Contacting surface.
Further, n areas generate the first n-type conductive layer to be generated on substrate on unintentional doped layer, unintentional doped layer,
Generated on first n-type conductive layer and the first n-contact layer is generated on the first current barrier layer, the first current barrier layer, the first n-type connects
Generated in contact layer and life in the second n-contact layer, the second n-contact layer is generated on the second current barrier layer, the second current barrier layer
The second n-type conductive layer being connected with active area is generated into the 3rd current barrier layer, on the 3rd current barrier layer.
Further, the first n-contact layer, the second n-contact layer, the n-type doping concentration of the second n-type conductive layer are different, and
Doping concentration meets the first n-contact layer much larger than the second n-contact layer, and the second n-contact layer is conductive much larger than the second n-type
Layer.
Further, the first current barrier layer, the second current barrier layer, the 3rd current barrier layer constituent material are AlGaN.
Further, the thickness of the second n-contact layer and the second n-type conductive layer is both less than 50nm；First current barrier layer,
Two current barrier layers and the 3rd current barrier layer are both less than 10nm.
Further, p areas are raw on generation p-type electric-conducting layer on the limiting layer being connected with active area, limiting layer, p-type electric-conducting layer
Into P type contact layer, ITO conductive layer is generated in P type contact layer, p-electrode is arranged on ITO conductive layer.
Further, electrode isolation layers are set between n-electrode and active area and p areas.
After such scheme, N-type region domain of the present invention replaces the compound of composition with current barrier layer using n-contact layer and connect
Contact layer epitaxial structure so that the current expansion effect in N-type region domain is preferably lifted.Therefore, the electric current in N-type region domain is being kept
Under conditions of extension effect does not drop, the thickness of N-type conductive layer can be effectively thinned, growth time and production cost is reduced.
Can be adulterated various concentrations by different contact layers, obtain different Ohmic contact results；Difference can also be passed through
Current barrier layer obtains different current blocking effects using different Al components；Shape between n-electrode and multistage composite contact layer
Into stepped contact surface.So that N-type region domain forms a functive for effectively extending electric current, the bottom current expansion of functive
Effect preferably, farther out, up take second place by diffusion length, forms electric current reasonable layout, reaches preferable current expansion effect, Jin Erti
The luminous efficiency of high light emitting diode.
Therefore, the present invention obtains following beneficial effect：First, higher LED lighting efficiency is obtained.It is conductive compared with single layer of n-type
Layer homogenous material constitute, stepped composite contact mode can by the change of epitaxial material or doping with the Europe of n-electrode
Nurse contact gradual change type change, improves current expansion effect, improves the luminous efficiency of diode.
2nd, extension efficiency and reduction extension cost are improved.It is stepped compared with the flat surface contact manner of single layer of n-type conductive layer
Composite contact mode can obtain identical current expansion effect using thinner n-type conductive layer, saved the epitaxial growth time, carried
High epitaxial growth efficiency.
Brief description of the drawings
Fig. 1 is manufacture craft schematic diagram one of the present invention；
Fig. 2 is manufacture craft schematic diagram two of the present invention；
Fig. 3 is manufacture craft schematic diagram three of the present invention；
Fig. 4 is manufacture craft schematic diagram four of the present invention；
Fig. 5 is manufacture craft schematic diagram five of the present invention；
Fig. 6 is manufacture craft schematic diagram six of the present invention；
Fig. 7 is final product structure schematic diagram of the present invention.
Label declaration
The p-electrode 11 of p areas 1
The p-type electric-conducting of limiting layer 12 layer 13
The ITO conductive layer 15 of P type contact layer 14
The n-electrode 21 of n areas 2
The unintentional doped layer 23 of substrate 22
The n-type conductive layer 242 of first n-type conductive layer 241 second
First current barrier layer 25
The current barrier layer 27 of first n-contact layer 26 second
The current barrier layer 29 of second n-contact layer 28 the 3rd
The electrode isolation layers 4 of active area 3.
Embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
As shown in fig.7, a kind of blue green LED chip that the present invention is disclosed, including p areas 1, n areas 2 and active area
3, active area 3 is arranged between p areas 1 and n areas 2, and p-electrode 11 is set on the conductive layer in p areas 1；The epitaxial structure of n areas 2 is used by n
Type contact layer replaces the multistage composite contact layer constituted with current barrier layer, and multiple contact surfaces are set on multistage composite contact layer
N-electrode 21.Electrode isolation layers 4 are set between n-electrode 21 and active area 3 and p areas 1.
N-type region domain of the present invention replaces the composite contact layer epitaxial structure constituted using n-contact layer with current barrier layer, makes
The current expansion effect for obtaining N-type region domain is preferably lifted.Therefore, the current expansion effect in holding N-type region domain does not drop
Under the conditions of, the thickness of N-type conductive layer can be effectively thinned, growth time and production cost is reduced.
The different contact surface of stepped multiple current expansion effects is formed between n-electrode 21 and multistage composite contact layer.
In the present embodiment, n areas 2 is generate unintentional doped layer 23 on the substrate 22, and the material of unintentional doped layer 23 is
The first n-type conductive layer 241 is generated on GaN, unintentional doped layer 23, the material of the first n-type conductive layer 241 is GaN, the first n-type
The first current barrier layer 25 is generated on conductive layer 241, the material of the first current barrier layer 25 is AlGaN, the first current barrier layer
The first n-contact layer 26 is generated on 25, the material of the first n-contact layer 26 is to generate second in GaN, the first n-contact layer 26
Current barrier layer 27, the material of the second current barrier layer 27 is that the contact of the second n-type is generated on AlGaN, the second current barrier layer 27
Layer 28, the material of the second n-contact layer 28 is that the 3rd current barrier layer 29 is generated in GaN, the second n-contact layer 28, the 3rd electricity
The material of flow barrier 29 is that the second n-type conductive layer being connected with active area 3 is generated on AlGaN, the 3rd current barrier layer 29
242, the material for the second n-type conductive layer 242 being connected with active area 3 is GaN.
First n-contact layer 26, the second n-contact layer 28, the n-type doping concentration of the second n-type conductive layer 242 are different, and
Doping concentration meets the first n-contact layer 26 much larger than the second n-contact layer 28, and the second n-contact layer 28 is much larger than the second n-type
Conductive layer 242.
The thickness of second n-contact layer 28 and the second n-type conductive layer 242 is both less than 50nm；First current barrier layer 25,
Two current barrier layers 27 and the 3rd current barrier layer 29 are both less than 10nm.
In the second n-type conductive layer 242 being connected with active area 3, the 3rd current barrier layer 29, the second n-contact layer 28,
N-electrode 21 is made on two current barrier layers 27 and the first n-contact layer 26.Formed between n-electrode 21 and multistage composite contact layer
The second n-type conductive layer 242 that stepped contact surface, i.e. n-electrode 21 are connected with active area 3, the 3rd current barrier layer 29,
Stepped contact surface is formed between two n-contact layers 28, the second current barrier layer 27 and the first n-contact layer 26.
In the present embodiment, p areas 1 are the limiting layer 12 being connected with active area 3, and the material of limiting layer 12 is AlGaN, limiting layer
P-type electric-conducting layer 13 is generated on 12, the material of p-type electric-conducting layer 13 is to generate P type contact layer 14 on GaN, p-type electric-conducting layer 13, and p-type connects
The material of contact layer 14 is to generate ITO in GaN, P type contact layer 14（Tin indium oxide）Conductive layer 15, it is conductive that p-electrode 11 is arranged on ITO
On layer 15.
Can be adulterated various concentrations by different contact layers, obtain different Ohmic contact results；Difference can also be passed through
Current barrier layer obtains different current blocking effects using different Al components；Shape between n-electrode and multistage composite contact layer
Into stepped contact surface.So that N-type region domain forms a functive for effectively extending electric current, the bottom current expansion of functive
Effect preferably, farther out, up take second place by diffusion length, forms electric current reasonable layout, reaches preferable current expansion effect, Jin Erti
The luminous efficiency of high light emitting diode.
A kind of blue green LED chip manufacture craft, comprises the following steps：
One, as shown in figure 1, sequentially generating unintentional doped layer 23, the first n-type conductive layer 241, in epitaxial substrate 22
One current barrier layer 25, the first n-contact layer 26, the second current barrier layer 27, the second n-contact layer 28, the 3rd current blocking
The 29, second n-type conductive layer 242 of layer, active area 3, limiting layer 12, p-type electric-conducting layer 13 and P type contact layer 14.
Two, as shown in Fig. 2 mask, photoetching, ICP are etched to the second n-type being connected with active area 3 in P type contact layer 14
Conductive layer 242.
Three, as shown in figure 3, mask, photoetching on exposed the second n-type conductive layer 242 being connected with active area 3, are used
The 3rd current barrier layer 29, the surface of exposed the second n-contact layer of part 28 are worn in ICP etchings with element detection.
Four, as shown in figure 4, in the exposed surface of the second n-contact layer 28 mask, photoetching again, using with element detection
The second current barrier layer 27, the surface of exposed the first n-contact layer of part 26 are worn in ICP etchings.
Five, as shown in figure 5, mask, photoetching P type contact layer 14, ITO conductive layer is deposited in exposed P type contact layer 14
15。
Six, as shown in fig. 6, all photoresists in surface are removed, then mask, photoetching, make p-electrode on ITO conductive layer 15
11, made in the second n-type conductive layer 242 being connected with active area 3, the second n-contact layer 28 and 27 first n-contact layers 26
N-electrode 21.
Seven, electrode isolation layers 4 are generated between n-electrode 21 and active area 3 and p areas 1, blue green LED chip is formed,
As shown in Figure 7.
The preferred embodiments of the present invention are the foregoing is only, the limitation not designed this case, all designs according to this case are closed
The equivalent variations that key is done, each fall within the protection domain of this case.
Claims (2)
1. a kind of blue green LED chip manufacture craft, it is characterised in that comprise the following steps：
One, unintentional doped layer, the first n-type conductive layer, the first current barrier layer, the first n-type are sequentially generated in epitaxial substrate
Contact layer, the second current barrier layer, the second n-contact layer, the 3rd current barrier layer, the second n-type conductive layer, active area, limitation
Layer, p-type electric-conducting layer and P type contact layer；
Two, mask, photoetching, ICP are etched to the second n-type conductive layer being connected with active area in P type contact layer；
Three, mask, photoetching on exposed the second n-type conductive layer being connected with active area are etched using the ICP with element detection
Wear the 3rd current barrier layer, the surface of the exposed n-contact layer of part second；
Four, in exposed the second n-contact layer surface mask, photoetching again, the second electric current is worn using the ICP etchings with element detection
Barrier layer, the surface of the exposed n-contact layer of part first；
Five, ITO conductive layer is deposited in exposed P type contact layer in mask, photoetching P type contact layer；
Six, all photoresists in surface, then mask, photoetching are removed, p-electrode is made on ITO conductive layer, what is be connected with active area
N-electrode is set in second n-type conductive layer, the second n-contact layer and the first n-contact layer；
Seven, generate electrode isolation layers between n-electrode and active area and p areas.
2. a kind of blue green LED chip manufacture craft as claimed in claim 1, it is characterised in that n-electrode with having
Stepped contact surface is set between the second n-type conductive layer, the second n-contact layer and the first n-contact layer of source region connection.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510649507.4A CN105374908B (en) | 2015-10-10 | 2015-10-10 | A kind of blue green LED chip manufacture craft |
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| CN201510649507.4A CN105374908B (en) | 2015-10-10 | 2015-10-10 | A kind of blue green LED chip manufacture craft |
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| CN105374908A CN105374908A (en) | 2016-03-02 |
| CN105374908B true CN105374908B (en) | 2017-09-05 |
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| CN108598235B (en) * | 2018-05-09 | 2019-12-20 | 芜湖德豪润达光电科技有限公司 | GaN-based LED structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834247A (en) * | 2009-03-03 | 2010-09-15 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
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| TWI453948B (en) * | 2012-03-12 | 2014-09-21 | Univ Chang Gung | The structure of the press - fit type flip - chip light emitting element and its making method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101834247A (en) * | 2009-03-03 | 2010-09-15 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
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