CN210805813U - LED chip of high reliability - Google Patents
LED chip of high reliability Download PDFInfo
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- CN210805813U CN210805813U CN201921714406.0U CN201921714406U CN210805813U CN 210805813 U CN210805813 U CN 210805813U CN 201921714406 U CN201921714406 U CN 201921714406U CN 210805813 U CN210805813 U CN 210805813U
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Abstract
The utility model discloses a LED chip of high reliability, it includes: a substrate; the epitaxial layer is arranged on the substrate and comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; a first electrode provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; and at least one first current spreading line disposed on the second semiconductor layer, the first current spreading line being electrically connected to the second electrode; the first current spreading line is electrically connected with the first semiconductor layer through a plurality of first holes which are formed in the epitaxial layer and penetrate through the first semiconductor layer. The utility model provides a first electric current extension line passes through the hole and is connected with first semiconductor layer, and it can promote electric current extension homogeneity by a wide margin, prevents that local electric current from concentrating, leads to local overheat, burns out the chip, has promoted the reliability of LED chip.
Description
Technical Field
The utility model relates to a light emitting diode technical field especially relates to a LED chip of high reliability.
Background
Light emitting diode, abbreviated LED for english word, main meaning: compared with the traditional lighting device, the Light Emitting Diode has the advantages of long service life, high lighting effect, no radiation, low power consumption and environmental protection. At present, the LED is mainly used in the fields of display screens, indicator lamps, backlight sources and the like.
At present, the LED has been widely applied in the illumination field, and along with the expansion of the application field, the requirements for the characteristics of the LED product are increasingly raised; how to realize the unification of long service life, high reliability and high light efficiency is an urgent problem to be solved. One way to improve LED performance is to promote current expansion performance, such as in the LED chip disclosed in chinese patent CN104377282A, that is, current expansion strips are prepared on one side of the P electrode and the N electrode, which improves current expansion and improves reliability of the LED chip; however, the current spreading strips need to be integrally etched, so that the light-emitting area of the LED is reduced, and the lighting effect is reduced.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a LED chip of high reliability is provided, its reliability is high, and the light efficiency is high.
In order to solve the technical problem, the utility model provides a LED chip of high reliability, it includes:
a substrate;
the epitaxial layer is arranged on the substrate and comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer;
a first electrode provided on the first semiconductor layer;
a second electrode provided on the second semiconductor layer; and
at least one first current spreading line disposed on the second semiconductor layer, the first current spreading line being electrically connected to the first electrode;
the first current spreading line is electrically connected with the first semiconductor layer through a plurality of first holes which are formed in the epitaxial layer and penetrate through the first semiconductor layer.
As an improvement of the above technical solution, the first holes are distributed between the second electrode and the first electrode, and the depth of the first holes increases from the second electrode to the first electrode.
As an improvement of the technical scheme, the depth of the first holes is 0.6-1.6 microns.
As an improvement of the technical scheme, the distance between the adjacent first holes is equal or unequal.
As an improvement of the above technical solution, the first current spreading line is electrically connected to the first semiconductor layer through 7 first holes with equal spacing; the depth of each first hole distributed from the second electrode to the first electrode is 0.8 +/-0.05 mu m, 0.9 +/-0.05 mu m, 1 +/-0.05 mu m, 1.1 +/-0.05 mu m, 1.2 +/-0.05 mu m, 1.3 +/-0.05 mu m and 1.4 +/-0.05 mu m in sequence.
As an improvement of the technical scheme, the epitaxial layer comprises an epitaxial buffer layer, a u-GaN layer, an N-GaN contact layer, a light emitting layer and a P-GaN layer which are sequentially arranged on the substrate;
and the doping concentration of Si in the N-GaN contact layer is greater than that of Si in the N-GaN layer.
As an improvement of the above technical solution, the method further comprises: a current spreading layer and an insulating protection layer; the current expansion layer is arranged on the second semiconductor layer; the insulating protection layer is arranged on the first semiconductor layer, the second semiconductor layer and the first hole.
As an improvement of the above technical solution, the current spreading layer is made of indium tin oxide; the insulating protective layer is made of SiO2And/or Si3N4Is made of a thickness of
As an improvement of the above technical solution, the display device further includes a second current spreading line electrically connected to the second electrode and extending from the second electrode to the first electrode.
Implement the utility model discloses, following beneficial effect has:
1. the utility model discloses be connected the electric current extension line through a series of holes and semiconductor layer, be different from traditional LED chip and open a rectangular region, reducible etching area has increased the light-emitting area of chip promptly, has promoted the luminance of chip.
2. The utility model discloses the electric current extension line of N electrode is connected through first hole and N-GaN layer, and is set up by shallow to dark through controlling first hole, can make electric current extension homogeneity promote by a wide margin to avoid local overheat that local electric current leads to concentrating, burnt the phenomenon of chip, promoted the reliability of LED chip.
3. The utility model provides a LED chip closes traditional current blocking layer and passivation layer as an organic whole, reduces the process, has reduced manufacturing cost.
Drawings
Fig. 1 is a schematic structural diagram of a high-reliability LED chip according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a cross-sectional view taken along line B-B of FIG. 1;
fig. 4 is a schematic structural diagram of a high-reliability LED chip according to another embodiment of the present invention;
fig. 5 is a schematic view of an epitaxial structure in a further embodiment of the invention;
fig. 6 is a flow chart of a method for manufacturing a high-reliability LED chip according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings. Only this statement, the utility model discloses the upper and lower, left and right, preceding, back, inside and outside etc. position words that appear or will appear in the text only use the utility model discloses an attached drawing is the benchmark, and it is not right the utility model discloses a concrete restriction.
Referring to fig. 1 to 3, the present embodiment provides a highly reliable LED chip, which includes a substrate 1; an epitaxial layer 2 disposed on the substrate 1, wherein the epitaxial layer 2 includes a first semiconductor layer 21, a light emitting layer 22 and a second semiconductor layer 23; a first electrode 3 provided on the first semiconductor layer 21; a second electrode 4 provided on the second semiconductor layer 23; and at least one first current spreading line 5 disposed on the second semiconductor layer 23, the first current spreading line 5 being electrically connected to the second electrode 4; the first current spreading line 5 is electrically connected to the first semiconductor layer 21 through a plurality of first holes 24 formed in the epitaxial layer 2 and penetrating through the first semiconductor layer 21. The first current expansion line 5 is connected with the first semiconductor layer 21 through the first holes, so that the current expansion performance can be improved, local overheating is prevented, the reliability of the LED chip is improved, meanwhile, the etching amount of the light emitting layer 22 can be reduced, and the brightness of the LED chip is improved.
Wherein, the epitaxial layer 2 is a GaN-based epitaxial layer, but is not limited thereto; the first semiconductor layer 21 is a Si-doped GaN layer, i.e., an N-GaN layer, the light-emitting layer 22 is an MQW layer, and the second semiconductor layer 23 is a Mg-doped GaN layer, i.e., a P-GaN layer, but is not limited thereto.
Specifically, in the present embodiment, the first extension line 5 is connected to the first semiconductor layer 21 through a plurality of first holes 24. The first holes 24 are distributed between the first electrode 3 and the second electrode 4, and the depth of the first holes 24 is increased from the second electrode 4 to the first electrode 3; the bottoms of the first holes 24 with different depths are located at different positions of the first semiconductor layer 21, the Si doping concentrations of the first semiconductor layer 21 at different positions are different, and the current spreading capability is also different. By adopting the first holes with the depth gradually increased from the second electrode 4 to the first electrode 3, a layered current expansion line can be formed according to the characteristics of current distribution of the LED chip, and the current expansion performance is greatly improved.
Specifically, the depth of the first holes 24 is 0.6 to 1.6 μm, preferably 0.8 to 1.5 μm; the cross-sectional shape of the first hole 24 is circular, square, oval or star-shaped, but is not limited thereto.
Specifically, the distances between adjacent first holes 24 are equal or unequal, and preferably, the distances between adjacent first holes 24 are equal, that is, the distances between the first holes 24 are uniformly distributed on the epitaxial layer 2.
Preferably, in the preferred embodiment of the present invention, the LED chip is provided with a first current spreading line 5, which is electrically connected to the first semiconductor layer 21 through 7 first holes 24 uniformly distributed at intervals; the depth of each first hole distributed from the second electrode to the first electrode is 0.8 +/-0.05 mu m, 0.9 +/-0.05 mu m, 1 +/-0.05 mu m, 1.1 +/-0.05 mu m, 1.2 +/-0.05 mu m, 1.3 +/-0.05 mu m and 1.4 +/-0.05 mu m in sequence. The first extension line has better current extension effect.
Referring to fig. 2 to 3, in the present embodiment, the LED chip further includes a current spreading layer 6 and an insulating protection layer 7; wherein, the current spreading layer 6 is made of ITO (indium tin oxide) or IZO (indium zinc oxide), but is not limited thereto; the current spreading layer 6 can further improve the uniformity of current spreading. The thickness of the current spreading layer 6 is
Preferably, it is
Wherein the insulating protective layer 7 is made of SiO2And/or Si3N4Is made of an insulating protective layer 7 having a thickness of
Specifically, in the present embodiment, the current spreading layer 6 is distributed on the second semiconductor layer 23; the insulating protection layer 7 is arranged in the current expansion layer 6, the first semiconductor layer 21 and the first hole 24, and exposes the first electrode 3 and the second electrode 4; the insulating protection layer 7 may protect the entire chip structure. In a general LED chip structure, a current blocking layer is arranged between an ITO layer and a P-GaN layer below a P electrode; a current blocking layer is also arranged between the N electrode and the N-GaN layer; meanwhile, a passivation layer is arranged on the surface of the chip; the current barrier layer can prevent current from directly flowing into the semiconductor layer from the electrode region and promote the diffusion of the current; because the utility model discloses in promoted the diffusion of electric current through the electric current extension strip, consequently, need not to set up the current barrier layer, simplified production processes.
Specifically, in the present embodiment, the first electrode 3 is electrically connected to the first semiconductor layer 21 through the second hole 25 formed in the epitaxial layer 2; the depth of the second holes 25 is 1.4-2 μm, preferably 1.5 + -0.05 μm; the width of the second hole is 3-10 μm, preferably 3-8 μm; the cross-sectional shape of the second hole 25 is circular, elliptical, star-shaped, or square, but is not limited thereto. The first electrode 3 and the second electrode 4 are formed by one of electron beam evaporation, thermal evaporation, and magnetron sputtering.
Referring to fig. 4, in another embodiment of the present invention, a plurality of second current spreading lines 8 are further included, and are electrically connected to the second electrodes. The second current spreading line 8 is provided on the surface of the second semiconductor layer 23 and extends from the second electrode 5 toward the first electrode 4. The second electric current extension line can further promote the utility model discloses the electric current extension of well chip is used.
Referring to fig. 5, in still another embodiment of the present invention, the epitaxial layer 2 includes an epitaxial buffer layer 26, a u-GaN layer 27, an N-GaN layer 21, an N-GaN contact layer 28, a light emitting layer 22, and a P-GaN layer sequentially provided on the substrate 1; wherein, the N-GaN layer 21 and the N-GaN contact layer 28 are both silicon-doped GaN layers; the doping concentration of Si in the N-GaN contact layer 28 is greater than that of Si in the N-GaN layer 21; the N-GaN contact layer 28 can reduce the voltage and solve the problem of the increase in voltage caused by the current spreading layer 6, the first current spreading line 5, and the second current spreading line 8.
Correspondingly, referring to fig. 6, the embodiment also discloses a method for manufacturing the LED chip, which includes the following steps:
s1: providing a substrate;
the substrate may be sapphire, but is not limited thereto.
S2: forming an epitaxial layer on a substrate;
s3: photoetching the epitaxial layer to form a plurality of first holes penetrating through the first semiconductor layer;
specifically, S3 includes:
s31: photoetching the epitaxial layer to form a plurality of first holes penetrating through the first semiconductor layer;
specifically, a yellow light is used for patterning, and then a plurality of first holes with sequentially increased depths are etched by adopting dry etching;
s32: photoetching the epitaxial layer to form a second hole penetrating through the first semiconductor layer;
s33: forming a current spreading layer on the surface of the second semiconductor layer;
specifically, a current spreading layer may be formed on the second semiconductor layer using a magnetron sputtering method.
S34: forming an insulating protection layer, and opening holes in the electrode area and the current expansion line area;
s4: and forming a first electrode, a second electrode and a first current expansion line to obtain a high-reliability LED chip finished product.
Specifically, one of electron beam evaporation, thermal evaporation and magnetron sputtering may be used for evaporation to form the first electrode, the second electrode and the first current spreading line.
Preferably, the preparation method of the LED chip of the present invention further comprises the following steps:
s5: grinding and thinning the substrate, carrying out laser scratch, splitting, and carrying out point measurement and sorting.
Wherein, the scratching operation is carried out by 355nm or 1046nm laser.
The foregoing is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations are also considered as the protection scope of the present invention.
Claims (9)
1. A highly reliable LED chip, comprising:
a substrate;
the epitaxial layer is arranged on the substrate and comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer;
a first electrode provided on the first semiconductor layer;
a second electrode provided on the second semiconductor layer; and
at least one first current spreading line disposed on the second semiconductor layer, the first current spreading line being electrically connected to the first electrode;
the first current spreading line is electrically connected with the first semiconductor layer through a plurality of first holes which are formed in the epitaxial layer and penetrate through the first semiconductor layer.
2. The high reliability LED chip of claim 1 wherein said first holes are distributed between said second electrode and said first electrode, said first holes having a depth that increases from said second electrode to said first electrode.
3. The highly reliable LED chip as claimed in claim 1 or 2, wherein the depth of the first hole is 0.6-1.6 μm.
4. The high reliability LED chip of claim 1, wherein the spacing between adjacent first holes is equal or unequal.
5. The high reliability LED chip of claim 1 wherein said first current spreading line is electrically connected to said first semiconductor layer through 7 first holes of equal spacing; the depth of each first hole distributed from the second electrode to the first electrode is 0.8 +/-0.05 mu m, 0.9 +/-0.05 mu m, 1 +/-0.05 mu m, 1.1 +/-0.05 mu m, 1.2 +/-0.05 mu m, 1.3 +/-0.05 mu m and 1.4 +/-0.05 mu m in sequence.
6. The high-reliability LED chip according to claim 1, wherein the epitaxial layer comprises an epitaxial buffer layer, a u-GaN layer, an N-GaN contact layer, a light emitting layer and a P-GaN layer sequentially provided on the substrate;
and the doping concentration of Si in the N-GaN contact layer is greater than that of Si in the N-GaN layer.
7. The highly reliable LED chip according to claim 1, further comprising: a current spreading layer and an insulating protection layer; the current expansion layer is arranged on the second semiconductor layer; the insulating protection layer is arranged on the first semiconductor layer, the second semiconductor layer and the first hole.
8. The high-reliability LED chip according to claim 7, wherein the current spreading layer is made of indium tin oxide; the insulating protective layer is made of SiO2Or Si3N4Is made of a thickness of
9. The high reliability LED chip of claim 1 further comprising a second current spreading line electrically connected to said second electrode and extending from said second electrode to said first electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921714406.0U CN210805813U (en) | 2019-10-12 | 2019-10-12 | LED chip of high reliability |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921714406.0U CN210805813U (en) | 2019-10-12 | 2019-10-12 | LED chip of high reliability |
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| CN210805813U true CN210805813U (en) | 2020-06-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707193A (en) * | 2019-10-12 | 2020-01-17 | 佛山市国星半导体技术有限公司 | High-reliability LED chip and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707193A (en) * | 2019-10-12 | 2020-01-17 | 佛山市国星半导体技术有限公司 | High-reliability LED chip and preparation method thereof |
| CN110707193B (en) * | 2019-10-12 | 2024-02-20 | 佛山市国星半导体技术有限公司 | High-reliability LED chip and preparation method thereof |
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