CN105304782A - Blue-and-green light emitting diode chip - Google Patents

Blue-and-green light emitting diode chip Download PDF

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Publication number
CN105304782A
CN105304782A CN201510649958.8A CN201510649958A CN105304782A CN 105304782 A CN105304782 A CN 105304782A CN 201510649958 A CN201510649958 A CN 201510649958A CN 105304782 A CN105304782 A CN 105304782A
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Prior art keywords
layer
current barrier
contact layer
contact
district
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CN201510649958.8A
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CN105304782B (en
Inventor
林志伟
陈凯轩
张永
姜伟
卓祥景
方天足
陈亮
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Xiamen Changelight Co Ltd
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Xiamen Changelight Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a blue-and-green light emitting diode chip which comprises a p region, an n region and an active region. The active region is arranged between the p region and the n region. A p electrode is arranged on the conductive layer of the p region. A multistage composite contact layer which is formed through alternatively laminating an n-type contact layer and a current barrier layer is used as an n-region epitaxial structure. An n electrode with a plurality of contact surfaces is arranged on the multistage composite contact layer. The blue-and-green light emitting diode chip can improve current expansion effect and furthermore improves light emitting efficiency of the light emitting diode.

Description

A kind of blue green LED chip
Technical field
The present invention relates to LED technology field, refer in particular to a kind of blue green LED chip.
Background technology
Light-emitting diode due to its low-power consumption, size is little and reliability is high and obtain swift and violent development as main light source.The field that utilizes of special light-emitting diode nearly ten years is expanded rapidly.The cost improving brightness and reduction light-emitting diode becomes the target of LED field development.
In prior art, blue green LED chip comprises p district, n district and active area, and active area is arranged between p district and n district, and the conductive layer in p district arranges p-electrode.N district is included on substrate and arranges involuntary doped layer, and involuntary doped layer arranges N-shaped conductive layer, and this N-shaped conductive layer is provided with source region.
In traditional making blue green LED chip technology, ICP is etched to N-shaped conductive layer, and on N-shaped conductive layer, evaporation metal manufactures n-type electrode.Namely adopt single layer of n-type conductive layer to contact with n-electrode, and be plane contact between n-electrode and N-shaped conductive layer, and do not adopt the way of contact of stepped multi-contact surface.Its defect is:
One, single layer of n-type conductive layer contacts with n-electrode, makes the thickness of N-shaped conductive layer thicker, extends the epitaxial growth time, reduces production efficiency.
Two, single layer of n-type conductive layer contacts with n-electrode, and cannot pass through the change of epitaxial material or doping and change with the ohmic contact gradual change type of n-electrode, make current expansion effect poor, the luminous efficiency of diode be lower.
Summary of the invention
The object of the present invention is to provide a kind of blue green LED chip, to improve current expansion effect, and then improve the luminous efficiency of light-emitting diode.
For reaching above-mentioned purpose, solution of the present invention is:
A kind of blue green LED chip, comprise p district, n district and active area, active area is arranged between p district and n district, and the conductive layer in p district arranges p-electrode; N district epitaxial structure adopts the multistage composite contact layer be alternately made up of n-contact layer and current barrier layer, and multistage composite contact layer arranges the n-electrode of multiple contact-making surface.
Further, the different contact-making surface of stepped multiple current expansion effect is formed between n-electrode from multistage composite contact layer.
Further, n district for generate involuntary doped layer on substrate, involuntary doped layer generates the first N-shaped conductive layer, first N-shaped conductive layer generates the first current barrier layer, first current barrier layer generates the first n-contact layer, the first n-contact layer generates the second current barrier layer, the second current barrier layer generates the second n-contact layer, second n-contact layer generates the 3rd current barrier layer, the 3rd current barrier layer generates the second N-shaped conductive layer be connected with active area.
Further, the N-shaped doping content of the first n-contact layer, the second n-contact layer, the second N-shaped conductive layer is different, and doping content meets the first n-contact layer much larger than the second n-contact layer, and the second n-contact layer is much larger than the second N-shaped conductive layer.Wherein, much larger than being more than 5 times.
Further, the first current barrier layer, the second current barrier layer, the 3rd current barrier layer constituent material comprise AlGaN tri-or five compounds of group.
Further, the thickness of the second n-contact layer and the second N-shaped conductive layer is all less than 50nm; First current barrier layer, the second current barrier layer and the 3rd current barrier layer are all less than 10nm.
Further, p district is the limiting layer be connected with active area, limiting layer generates p-type electric-conducting layer, and p-type electric-conducting layer generates P type contact layer, P type contact layer generates ITO conductive layer, and p-electrode is arranged on ITO conductive layer.
Further, n-electrode and between active area and p district, electrode isolation layers is set.
A kind of blue green LED chip manufacture craft, comprises the following steps:
One, epitaxial substrate generates involuntary doped layer, the first N-shaped conductive layer, the first current barrier layer, the first n-contact layer, the second current barrier layer, the second n-contact layer, the 3rd current barrier layer, the second N-shaped conductive layer, active area, limiting layer, p-type electric-conducting layer and P type contact layer successively;
Two, in P type contact layer, mask, photoetching, ICP are etched to the second N-shaped conductive layer be connected with active area;
Three, mask, photoetching on exposed the second N-shaped conductive layer be connected with active area, adopt the ICP etching of band element detection to wear the 3rd current barrier layer, the surface of exposed local second n-contact layer;
Four, in exposed the second n-contact layer surface mask, photoetching again, adopt the ICP etching of band element detection to wear the second current barrier layer, the surface of exposed local first n-contact layer;
Five, mask, photoetching P type contact layer, evaporation ITO conductive layer in exposed P type contact layer;
Six, remove surperficial all photoresists, then mask, photoetching, ITO conductive layer makes p-electrode, the second N-shaped conductive layer, the second n-contact layer and the first n-contact layer be connected with active area makes n-electrode;
Seven, n-electrode and generate electrode isolation layers between active area and p district.
Further, n-electrode and the second N-shaped conductive layer, form stepped contact-making surface between the second n-contact layer and the first n-contact layer.
After adopting such scheme, the composite contact layer epitaxial structure that N-type region territory of the present invention adopts n-contact layer and current barrier layer alternately to form, makes the current expansion effect in N-type region territory be promoted preferably.Therefore, under the condition keeping the current expansion effect in N-type region territory not fall, can the thickness of effective thinning N-type conductive layer, reduce growth time and production cost.
By different contact layer doping variable concentrations, different ohmic contact results can be obtained; Also different Al components can be adopted to obtain different current blocking effects by different current barrier layer; Stepped contact-making surface is formed between n-electrode and multistage composite contact layer.Make N-type region territory form the functive of an effective extend current, the bottom current expansion effect of functive is better, and diffusion length is far away, up take second place, form electric current reasonable layout, reach good current expansion effect, and then improve the luminous efficiency of light-emitting diode.
Therefore, the present invention obtains following beneficial effect: one, obtain higher LED lighting efficiency.Form compared with the homogenous material of single layer of n-type conductive layer, stepped composite contact mode changes with the ohmic contact gradual change type of n-electrode by the change of epitaxial material or doping, improves current expansion effect, improves the luminous efficiency of diode.
Two, improve extension efficiency and reduce extension cost.Compared with the flat surface contact manner of single layer of n-type conductive layer, stepped composite contact mode can adopt thinner N-shaped conductive layer to obtain identical current expansion effect, has saved the epitaxial growth time, has improve epitaxial growth efficiency.
Accompanying drawing explanation
Fig. 1 is manufacture craft schematic diagram one of the present invention;
Fig. 2 is manufacture craft schematic diagram two of the present invention;
Fig. 3 is manufacture craft schematic diagram three of the present invention;
Fig. 4 is manufacture craft schematic diagram four of the present invention;
Fig. 5 is manufacture craft schematic diagram five of the present invention;
Fig. 6 is manufacture craft schematic diagram six of the present invention;
Fig. 7 is final product structure schematic diagram of the present invention.
Label declaration
P district 1p electrode 11
Limiting layer 12p type conductive layer 13
P type contact layer 14ITO conductive layer 15
N district 2n electrode 21
The involuntary doped layer 23 of substrate 22
First N-shaped conductive layer 241 second N-shaped conductive layer 242
First current barrier layer 25
First n-contact layer 26 second current barrier layer 27
Second n-contact layer 28 the 3rd current barrier layer 29
Active area 3 electrode isolation layers 4.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Consult shown in Fig. 7, a kind of blue green LED chip that the present invention discloses, comprise p district 1, n district 2 and active area 3, active area 3 is arranged between p district 1 and n district 2, and the conductive layer in p district 1 arranges p-electrode 11; N district 2 epitaxial structure adopts the multistage composite contact layer be alternately made up of n-contact layer and current barrier layer, and multistage composite contact layer arranges the n-electrode 21 of multiple contact-making surface.N-electrode 21 and between active area 3 and p district 1, electrode isolation layers 4 is set.
The composite contact layer epitaxial structure that N-type region territory of the present invention adopts n-contact layer and current barrier layer alternately to form, makes the current expansion effect in N-type region territory be promoted preferably.Therefore, under the condition keeping the current expansion effect in N-type region territory not fall, can the thickness of effective thinning N-type conductive layer, reduce growth time and production cost.
The contact-making surface that stepped multiple current expansion effect is different is formed between n-electrode 21 from multistage composite contact layer.
In the present embodiment, n district 2 is for generate involuntary doped layer 23 on the substrate 22, the material of involuntary doped layer 23 is GaN, involuntary doped layer 23 generates the first N-shaped conductive layer 241, the material of the first N-shaped conductive layer 241 is GaN, first N-shaped conductive layer 241 generates the first current barrier layer 25, the material of the first current barrier layer 25 is AlGaN, first current barrier layer 25 generates the first n-contact layer 26, the material of the first n-contact layer 26 is GaN, first n-contact layer 26 generates the second current barrier layer 27, the material of the second current barrier layer 27 is AlGaN, second current barrier layer 27 generates the second n-contact layer 28, the material of the second n-contact layer 28 is GaN, second n-contact layer 28 generates the 3rd current barrier layer 29, the material of the 3rd current barrier layer 29 is AlGaN, 3rd current barrier layer 29 generates the second N-shaped conductive layer 242 be connected with active area 3, the material of the second N-shaped conductive layer 242 be connected with active area 3 is GaN.
The N-shaped doping content of the first n-contact layer 26, second n-contact layer 28, second N-shaped conductive layer 242 is different, and doping content meets the first n-contact layer 26 much larger than the second n-contact layer 28, second n-contact layer 28 much larger than the second N-shaped conductive layer 242.
The thickness of the second n-contact layer 28 and the second N-shaped conductive layer 242 is all less than 50nm; First current barrier layer 25, second current barrier layer 27 and the 3rd current barrier layer 29 are all less than 10nm.
The the second N-shaped conductive layer 242 be connected with active area 3, the 3rd current barrier layer 29, second n-contact layer 28, second current barrier layer 27 and the first n-contact layer 26 make n-electrode 21.Form stepped contact-making surface between n-electrode 21 and multistage composite contact layer, namely n-electrode 21 be connected with active area 3 the second N-shaped conductive layer 242, form stepped contact-making surface between the 3rd current barrier layer 29, second n-contact layer 28, second current barrier layer 27 and the first n-contact layer 26.
In the present embodiment, p district 1 is the limiting layer 12 be connected with active area 3, the material of limiting layer 12 is AlGaN, limiting layer 12 generates p-type electric-conducting layer 13, the material of p-type electric-conducting layer 13 is GaN, p-type electric-conducting layer 13 generates P type contact layer 14, and the material of P type contact layer 14 is GaN, P type contact layer 14 generates ITO(tin indium oxide) conductive layer 15, p-electrode 11 is arranged on ITO conductive layer 15.
By different contact layer doping variable concentrations, different ohmic contact results can be obtained; Also different Al components can be adopted to obtain different current blocking effects by different current barrier layer; Stepped contact-making surface is formed between n-electrode and multistage composite contact layer.Make N-type region territory form the functive of an effective extend current, the bottom current expansion effect of functive is better, and diffusion length is far away, up take second place, form electric current reasonable layout, reach good current expansion effect, and then improve the luminous efficiency of light-emitting diode.
A kind of blue green LED chip manufacture craft, comprises the following steps:
One, as shown in Figure 1, epitaxial substrate 22 generates involuntary doped layer 23, first N-shaped conductive layer 241, first current barrier layer 25, first n-contact layer 26, second current barrier layer 27, second n-contact layer 28, the 3rd current barrier layer 29, second N-shaped conductive layer 242, active area 3, limiting layer 12, p-type electric-conducting layer 13 and P type contact layer 14 successively.
Two, as shown in Figure 2, in P type contact layer 14, mask, photoetching, ICP are etched to the second N-shaped conductive layer 242 be connected with active area 3.
Three, as shown in Figure 3, mask, photoetching on exposed the second N-shaped conductive layer 242 be connected with active area 3, adopt the ICP etching of band element detection to wear the 3rd current barrier layer 29, the surface of exposed local second n-contact layer 28.
Four, as shown in Figure 4, in the second exposed n-contact layer 28 surface mask, photoetching again, adopt the ICP etching of band element detection to wear the second current barrier layer 27, the surface of exposed local first n-contact layer 26.
Five, as shown in Figure 5, mask, photoetching P type contact layer 14, evaporation ITO conductive layer 15 in exposed P type contact layer 14.
Six, as shown in Figure 6, remove surperficial all photoresists, then mask, photoetching, ITO conductive layer 15 makes p-electrode 11, the second N-shaped conductive layer 242, second n-contact layer 28 and 27 first n-contact layer 26 be connected with active area 3 makes n-electrode 21.
Seven, n-electrode 21 and generate electrode isolation layers 4 between active area 3 and p district 1, forms blue green LED chip, as shown in Figure 7.
The foregoing is only the preferred embodiments of the present invention, not to the restriction of this case design, all equivalent variations done according to the design key of this case, all fall into the protection range of this case.

Claims (8)

1. a blue green LED chip, is characterized in that: comprise p district, n district and active area, and active area is arranged between p district and n district, and the conductive layer in p district arranges p-electrode; N district epitaxial structure adopts the multistage composite contact layer be alternately made up of n-contact layer and current barrier layer, and multistage composite contact layer arranges the n-electrode of multiple contact-making surface.
2. a kind of blue green LED chip as claimed in claim 1, is characterized in that: form the contact-making surface that stepped multiple current expansion effect is different between n-electrode from multistage composite contact layer.
3. a kind of blue green LED chip as claimed in claim 1, it is characterized in that: n district for generate involuntary doped layer on substrate, involuntary doped layer generates the first N-shaped conductive layer, first N-shaped conductive layer generates the first current barrier layer, first current barrier layer generates the first n-contact layer, first n-contact layer generates the second current barrier layer, second current barrier layer generates the second n-contact layer, second n-contact layer generates the 3rd current barrier layer, the 3rd current barrier layer generates the second N-shaped conductive layer be connected with active area.
4. a kind of blue green LED chip as claimed in claim 3, it is characterized in that: the N-shaped doping content of the first n-contact layer, the second n-contact layer, the second N-shaped conductive layer is different, and doping content meets the first n-contact layer much larger than the second n-contact layer, the second n-contact layer is much larger than the second N-shaped conductive layer.
5. a kind of blue green LED chip as claimed in claim 3, is characterized in that: the first current barrier layer, the second current barrier layer, the 3rd current barrier layer constituent material comprise AlGaN tri-or five compounds of group.
6. a kind of blue green LED chip as claimed in claim 3, is characterized in that: the thickness of the second n-contact layer and the second N-shaped conductive layer is all less than 50nm; First current barrier layer, the second current barrier layer and the 3rd current barrier layer are all less than 10nm.
7. a kind of blue green LED chip as claimed in claim 1, it is characterized in that: p district is the limiting layer be connected with active area, limiting layer generates p-type electric-conducting layer, p-type electric-conducting layer generates P type contact layer, P type contact layer generates ITO conductive layer, p-electrode is arranged on ITO conductive layer.
8. a kind of blue green LED chip as claimed in claim 1, is characterized in that: n-electrode and arrange electrode isolation layers between active area and p district.
CN201510649958.8A 2015-10-10 2015-10-10 A kind of blue green LED chip Active CN105304782B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108447955A (en) * 2018-03-16 2018-08-24 厦门市三安光电科技有限公司 LED chip construction and preparation method thereof
CN109860361A (en) * 2018-12-28 2019-06-07 映瑞光电科技(上海)有限公司 A kind of LED epitaxial structure and preparation method thereof, LED chip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834247A (en) * 2009-03-03 2010-09-15 Lg伊诺特有限公司 Light emitting device, light emitting device package and lighting system including the same
US20130234105A1 (en) * 2012-03-12 2013-09-12 Chang Gung University Bond type flip-chip light-emitting structure and method of manufacturing the same
CN205016552U (en) * 2015-10-10 2016-02-03 厦门乾照光电股份有限公司 Bluish -green emitting diode chip

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834247A (en) * 2009-03-03 2010-09-15 Lg伊诺特有限公司 Light emitting device, light emitting device package and lighting system including the same
US20130234105A1 (en) * 2012-03-12 2013-09-12 Chang Gung University Bond type flip-chip light-emitting structure and method of manufacturing the same
CN205016552U (en) * 2015-10-10 2016-02-03 厦门乾照光电股份有限公司 Bluish -green emitting diode chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108447955A (en) * 2018-03-16 2018-08-24 厦门市三安光电科技有限公司 LED chip construction and preparation method thereof
CN109860361A (en) * 2018-12-28 2019-06-07 映瑞光电科技(上海)有限公司 A kind of LED epitaxial structure and preparation method thereof, LED chip

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