CN105226158A - A kind of large scale light-emitting diode - Google Patents
A kind of large scale light-emitting diode Download PDFInfo
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- CN105226158A CN105226158A CN201510652636.9A CN201510652636A CN105226158A CN 105226158 A CN105226158 A CN 105226158A CN 201510652636 A CN201510652636 A CN 201510652636A CN 105226158 A CN105226158 A CN 105226158A
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- layer
- ohmic contact
- district
- compound
- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The present invention discloses a kind of large scale light-emitting diode, comprises p district, n district and active area, and active area is arranged between p district and n district, and p district arranges the first electrode, and n district arranges the second electrode; It is characterized in that: p district arranges the multilayer ohmic contact Rotating fields of compound, ITO conductive layer evaporation is on the multilayer ohmic contact Rotating fields of compound, and the first electrode is arranged on ITO conductive layer.The present invention can improve the current expansion effect of ITO conductive layer, reduces the area that is in the light of expansion electrode, improves the luminous efficiency of light-emitting diode, reduces manufacturing cost.
Description
Technical field
The present invention relates to LED technology field, refer in particular to a kind of large scale light-emitting diode.
Background technology
In prior art, large scale light-emitting diode comprises p district, n district and active area, and active area is arranged between p district and n district, the ITO(tin indium oxide in p district) conductive layer arranges the first electrode (p-electrode); The substrate in n district arranges the second electrode (n-electrode).
Described large scale light-emitting diode arranges limiting layer usually on the active area, limiting layer arranges current extending, current extending arranges one deck ohmic contact layer, direct evaporation ITO(tin indium oxide on the ohmic contact layer of individual layer) conductive layer, its defect is:
The current expansion effect of individual layer ITO conductive layer is poor, makes the area that is in the light of expansion electrode comparatively large, and then makes LED lighting efficiency lower.
Summary of the invention
The object of the present invention is to provide a kind of large scale light-emitting diode, to improve the current expansion effect of ITO conductive layer, reduce the area that is in the light of expansion electrode, improve the luminous efficiency of light-emitting diode, reduce manufacturing cost.
For reaching above-mentioned purpose, solution of the present invention is:
A kind of large scale light-emitting diode, comprise p district, n district and active area, active area is arranged between p district and n district, and p district arranges the first electrode, and n district arranges the second electrode; It is characterized in that: p district arranges the multilayer ohmic contact Rotating fields of compound, ITO conductive layer evaporation is on the multilayer ohmic contact Rotating fields of compound, and the first electrode is arranged on ITO conductive layer.
Further, the multilayer ohmic contact Rotating fields of compound is form etch stop layers respectively between multilayer ohmic contact layer.
Further, the multilayer ohmic contact Rotating fields of compound is form current barrier layer respectively between multilayer ohmic contact layer.
Further, stepped contact-making surface is formed between the multilayer ohmic contact Rotating fields of ITO conductive layer and compound.
Further, stepped contact-making surface is formed at the outer peripheral edges of the multilayer ohmic contact Rotating fields of compound.
Further, stepped contact-making surface is formed at the center of the multilayer ohmic contact Rotating fields of compound.
Further, between active area and the multilayer ohmic contact Rotating fields of compound, Second-Type limiting layer and current extending is generated successively.
Further, n district, for generate Bragg reflecting layer on substrate, Bragg reflecting layer generates the first type limiting layer, and the first type limiting layer is connected with active layer, and the second electrode is created on substrate.
Further, between active area and the multilayer ohmic contact Rotating fields of compound, limiting layer and Second-Type conductive layer is generated successively.
Further, n district, for generate involuntary doped layer on substrate, involuntary doped layer generates the first type conductive layer, and the first type conductive layer is connected with active layer, and the second electrode is created on the first type conductive layer.
A kind of large scale technique for preparing light emitting diode, at the multilayer ohmic contact Rotating fields of LED top epitaxial growth compound, multilayer ohmic contact Rotating fields arranges stair-stepping multiple contact plane and ITO conductive layer and forms three-dimensional ohmic contact, comprise the following steps:
One, epitaxial substrate generates Bragg reflecting layer, the first type limiting layer, active area, Second-Type limiting layer, current extending successively;
Two, current extending arranges ohmic contact layer and the etch stop layers of n group alternating growth, composition composite multi-layer ohmic contact Rotating fields;
Three, adopt mask, photoetching, wet corrosion technique on the ohmic contact layer surface of composite multi-layer ohmic contact layer structural top n-th layer, the ohmic contact layer surface of the n-th layer of removing unreserved regions and etch stop layers, expose the ohmic contact layer of (n-1)th layer.
Four, adopt mask, photoetching, wet corrosion technique again on the ohmic contact layer surface of exposed (n-1)th layer, the ohmic contact layer surface of (n-1)th layer of removing unreserved regions and etch stop layers, expose the ohmic contact layer of the n-th-2 layers.
Five, repeat the technique of step 4 until expose ground floor ohmic contact layer, form step-like surface;
Six, evaporation ITO conductive layers are formed with stair-stepping many ohmic contact face and contact, and ITO conductive layer arranges the first electrode, substrate arranges the second electrode.
Further, stepped contact-making surface is formed at the outer peripheral edges of the multilayer ohmic contact Rotating fields of compound.
Further, stepped contact-making surface is formed at the center of the multilayer ohmic contact Rotating fields of compound.
A kind of large scale technique for preparing light emitting diode, at the multilayer ohmic contact Rotating fields of LED top epitaxial growth compound, multilayer ohmic contact Rotating fields arranges stair-stepping multiple contact plane and ITO conductive layer and forms three-dimensional ohmic contact, comprise the following steps:
One, epitaxial substrate generates involuntary doped layer, the first type conductive layer, active area, limiting layer, Second-Type conductive layer successively;
Two, Second-Type conductive layer arranges ohmic contact layer and the current barrier layer of n group alternating growth, composition composite multi-layer ohmic contact Rotating fields;
Three, adopt mask, photoetching, ICP dry corrosion process on the ohmic contact layer surface of composite multi-layer ohmic contact layer structural top n-th layer, the ohmic contact layer surface of the n-th layer of removing unreserved regions and current barrier layer, expose the ohmic contact layer of (n-1)th layer.
Four, adopt mask, photoetching, ICP dry corrosion process again on the ohmic contact layer surface of exposed (n-1)th layer, the ohmic contact layer surface of (n-1)th layer of removing unreserved regions and current barrier layer, expose the ohmic contact layer of the n-th-2 layers.
Five, repeat the technique of step 4 until expose ground floor ohmic contact layer, form step-like surface;
Six, evaporation ITO conductive layers are formed with stair-stepping many ohmic contact face and contact;
Seven, adopt ICP to be etched to the first type conductive layer;
Eight, the first electrode is set on ITO conductive layer, the first type conductive layer arranges the second electrode.
Further, stepped contact-making surface is formed at the outer peripheral edges of the multilayer ohmic contact Rotating fields of compound.
Further, stepped contact-making surface is formed at the center of the multilayer ohmic contact Rotating fields of compound.
After adopting such scheme, the present invention adopts the multilayer ohmic contact Rotating fields of compound, its gross thickness is much smaller than ITO conductive layer thickness, and ITO conductive layer, preferably together with the multilayer ohmic contact Rotating fields evaporation of compound, reaches the effect that current expansion and current blocking be combined with each other; Thus improve the current expansion effect of ITO conductive layer, reduce the area that is in the light of expansion electrode, improve the luminous efficiency of light-emitting diode, reduce manufacturing cost.
The multilayer ohmic contact Rotating fields of compound is form etch stop layers respectively between multilayer ohmic contact layer, and the chip manufacturing of the staged ohmic contact layer after design etch stop layers can be used for, can serve as again the effect of current blocking.
Stepped contact-making surface is formed between the multilayer ohmic contact Rotating fields of ITO conductive layer and compound, thus can adjust with the ohmic contact layer of ITO conductive layers make contact along with the change of electrode distance is large, diminish to the gradual change of ohmic contact value, make ITO current expansion effect better in ionization electrode distance ohmic contact far away, electric current is made to be easier to flow to ionization electrode chip part far away, increase the current expansion effect of ITO, and then making large-sized chip without in expansion electrode situation, electric current also can expand to edge preferably; Different ohmic contact is realized mainly through the change of ohmic contact layer materials A l component or the change of doping content.
Accompanying drawing explanation
Fig. 1 is the processing step one of the embodiment of the present invention one;
Fig. 2 is the processing step two of the embodiment of the present invention one;
Fig. 3 is the processing step three of the embodiment of the present invention one;
Fig. 4 is the processing step four of the embodiment of the present invention one;
Fig. 5 is the processing step five of the embodiment of the present invention one;
Fig. 6 a is the structural representation of the embodiment of the present invention one;
Fig. 6 b is another structural representation of the embodiment of the present invention one;
Fig. 7 is the processing step one of the embodiment of the present invention two;
Fig. 8 is the processing step two of the embodiment of the present invention two;
Fig. 9 is the processing step three of the embodiment of the present invention two;
Figure 10 is the processing step four of the embodiment of the present invention two;
Figure 11 is the structural representation of the embodiment of the present invention two.
Label declaration
P district 1 first electrode 11
Ohmic contact Rotating fields 12ITO conductive layer 13
First ohmic contact layer 121 first etch stop layers 122
Second ohmic contact layer 123 second etch stop layers 124
3rd ohmic contact layer 125 first current barrier layer 126
The stepped contact-making surface 14 of second current barrier layer 127
Second-Type limiting layer 15 current extending 16
Limiting layer 17 Second-Type conductive layer 18
N district 2 second electrode 21
Substrate 22 Bragg reflecting layer 23
The involuntary doped layer 25 of first type limiting layer 24
First type conductive layer 26 active area 3
Electrode isolation layers 4.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Consult shown in Fig. 1 to Fig. 6 a, a kind of large scale light-emitting diode embodiment one that the present invention discloses, as shown in Figure 6 a, comprise p district 1, n district 2 and active area 3, active area 3 is arranged between p district 1 and n district 2, and p district 1 arranges the first electrode 11, and n district 2 arranges the second electrode 21.
P district 1 arranges multilayer ohmic contact Rotating fields 12, ITO conductive layer 13 evaporation of compound on the multilayer ohmic contact Rotating fields 12 of compound, and the first electrode 11 is arranged on ITO conductive layer 13.In the present embodiment, multilayer ohmic contact layer 12 structure of compound is form etch stop layers respectively between multilayer ohmic contact layer, be specially, first etch stop layers 122 is set between the first ohmic contact layer 121 and the second ohmic contact layer 123, the second etch stop layers 124 is set between the second ohmic contact layer 123 and the 3rd ohmic contact layer 125.The material of the first ohmic contact layer 121, second ohmic contact layer 123 and the 3rd ohmic contact layer 125 is AsGa, and the material of the first etch stop layers 122 and the second etch stop layers 124 is AlGaInP.
Stepped contact-making surface 14 is formed between the multilayer ohmic contact Rotating fields 12 of ITO conductive layer 13 and compound.In the present embodiment, stepped contact-making surface 14 is formed at the outer peripheral edges of the multilayer ohmic contact Rotating fields 12 of compound.
Second-Type limiting layer 15 and current extending 16 is generated successively between active area 3 and the multilayer ohmic contact Rotating fields 12 of compound.N district 2 generates Bragg reflecting layer 23 on the substrate 22, and Bragg reflecting layer 23 generates the first type limiting layer 24, first type limiting layer 24 and is connected with active layer 3, the second electrode 21 generates on the substrate 22.
The present invention also discloses above-mentioned a kind of large scale technique for preparing light emitting diode, comprises the following steps:
One, as shown in Figure 1, epitaxial substrate 22 is produced the multilayer ohmic contact Rotating fields 12 of Bragg reflecting layer (DBR) 23, first type limiting layer 24, active area 3, Second-Type limiting layer 15, current extending 16 and compound successively.Wherein, the multilayer ohmic contact Rotating fields 12 of compound is made up of the first ohmic contact layer 121, first etch stop layers 122, second ohmic contact layer 123, second etch stop layers 124 and the 3rd ohmic contact layer 125.The material of the first type limiting layer 24 and Second-Type limiting layer 15 is AlInP, and the material of current extending 16 is GaP, and the material of substrate 22 is GaAs.
Two, as shown in Figure 2, after the 3rd ohmic contact layer 125 adopts mask, photoetching, wet etching, exposed portion second etch stop layers 124; As shown in Figure 3, then after wet etching, the second ohmic contact layer 123 is exposed.As shown in Figure 4, adopt same procedure, expose the first ohmic contact layer 121.Now, extend to the 3rd ohmic contact layer 125 by the first ohmic contact layer 121, its outer peripheral edges form stepped exposing surface.
Three, as shown in Figure 5, stepped contact-making surface 14 is formed between the first exposed ohmic contact layer 121, second ohmic contact layer 123, the 3rd ohmic contact layer 125 step-like surface evaporation ITO conductive layer 13, ITO conductive layer 13 and the first ohmic contact layer 121, second ohmic contact layer 123, the 3rd ohmic contact layer 125.Stepped contact-making surface 14 is formed at the outer peripheral edges of the first ohmic contact layer 121, second ohmic contact layer 123 and the 3rd ohmic contact layer 125.
Four, ITO conductive layer 13 arranges the first electrode 11, ITO conductive layer 13 side surfaces is set to stepped, the second electrode 21 is set bottom substrate 22, form large scale light-emitting diode, as shown in Figure 6 a.
As shown in Figure 6 b, stepped contact-making surface 14 also can be formed at the center of the first ohmic contact layer 121, second ohmic contact layer 123 and the 3rd ohmic contact layer 125.
As shown in Fig. 7 to Figure 11, a kind of large scale light-emitting diode embodiment two that the present invention discloses, be from the different of embodiment one: n district 2 is for generate involuntary doped layer 25 on the substrate 22, involuntary doped layer (u-GaN) 25 generates the first type conductive layer (n-GaN) 26, first type conductive layer 26 be connected with active area 3.Active area 3 generates limiting layer (AlGaN) 17, limiting layer 17 generates Second-Type conductive layer (GaN) 18, Second-Type conductive layer 18 generates the multilayer ohmic contact Rotating fields 12 of compound, ITO conductive layer 13 evaporation is on the multilayer ohmic contact Rotating fields 12 of compound, and the first electrode 11 is arranged on ITO conductive layer 13.
In the present embodiment, multilayer ohmic contact layer 12 structure of compound is form current barrier layer respectively between multilayer ohmic contact layer, be specially, first current barrier layer 126 is set between the first ohmic contact layer 121 and the second ohmic contact layer 123, the second current barrier layer 127 is set between the second ohmic contact layer 123 and the 3rd ohmic contact layer 125.The material of the first ohmic contact layer 121, second ohmic contact layer 123 and the 3rd ohmic contact layer 125 is GaN, and the material of the first current barrier layer 126 and the second current barrier layer 127 is AlGaN.
Stepped contact-making surface 14 is formed between ITO conductive layer 13 and the first ohmic contact layer 121, second ohmic contact layer 123, the 3rd ohmic contact layer 125.Stepped contact-making surface 14 is formed at the outer peripheral edges of the first ohmic contact layer 121, second ohmic contact layer 123 and the 3rd ohmic contact layer 125.
The present invention also discloses above-mentioned a kind of large scale technique for preparing light emitting diode, comprises the following steps:
One, as shown in Figure 7, epitaxial substrate 22 generates the multilayer ohmic contact Rotating fields 12 of involuntary doped layer 25, first type conductive layer 26, active area 3, limiting layer 17, Second-Type conductive layer 18 and compound successively; Wherein, the multilayer ohmic contact Rotating fields 12 of compound is made up of the first ohmic contact layer 121, first current barrier layer 126, second ohmic contact layer 123, second current barrier layer 127 and the 3rd ohmic contact layer 125.
Two, as shown in Figure 8, after the 3rd ohmic contact layer 125 adopts mask, photoetching, ICP corrosion, expose the second ohmic contact layer 123; As shown in Figure 9, adopt identical method, expose the first ohmic contact layer 121.Now, extend to the 3rd ohmic contact layer 125 by the first ohmic contact layer 121, its outer peripheral edges form stepped exposing surface.
Three, as shown in Figure 10, stepped contact-making surface 14 is formed between the first exposed ohmic contact layer 121, second ohmic contact layer 123, the 3rd ohmic contact layer 125 step-like surface evaporation ITO conductive layer 13, ITO conductive layer 13 and the first ohmic contact layer 121, second ohmic contact layer 123, the 3rd ohmic contact layer 125.Stepped contact-making surface 14 is formed at the outer peripheral edges of the first ohmic contact layer 121, second ohmic contact layer 123 and the 3rd ohmic contact layer 125.
Four, ITO conductive layer 13 arranges the first electrode 11, ITO conductive layer 13 side surfaces is set to stepped, first conductive layer 26 arranges the second electrode 21, second electrode 21 and between ohmic contact Rotating fields 12, ITO conductive layer 13, limiting layer 17, Second-Type conductive layer 18 and active area 3, electrode isolation layers 4 is set, form large scale light-emitting diode, as shown in figure 11.
The foregoing is only the preferred embodiments of the present invention, not to the restriction of this case design, all equivalent variations done according to the design key of this case, all fall into the protection range of this case.
Claims (10)
1. a large scale light-emitting diode, comprises p district, n district and active area, and active area is arranged between p district and n district, and p district arranges the first electrode, and n district arranges the second electrode; It is characterized in that: p district arranges the multilayer ohmic contact Rotating fields of compound, ITO conductive layer evaporation is on the multilayer ohmic contact Rotating fields of compound, and the first electrode is arranged on ITO conductive layer.
2. a kind of large scale light-emitting diode as claimed in claim 1, is characterized in that: the multilayer ohmic contact Rotating fields of compound is form etch stop layers respectively between multilayer ohmic contact layer.
3. a kind of large scale light-emitting diode as claimed in claim 1, is characterized in that: the multilayer ohmic contact Rotating fields of compound is form current barrier layer respectively between multilayer ohmic contact layer.
4. a kind of large scale light-emitting diode as described in any one of claims 1 to 3, is characterized in that: form stepped contact-making surface between the multilayer ohmic contact Rotating fields of ITO conductive layer and compound.
5. a kind of large scale light-emitting diode as claimed in claim 4, is characterized in that: stepped contact-making surface is formed at the outer peripheral edges of the multilayer ohmic contact Rotating fields of compound.
6. a kind of large scale light-emitting diode as claimed in claim 4, is characterized in that: stepped contact-making surface is formed at the center of the multilayer ohmic contact Rotating fields of compound.
7. a kind of large scale light-emitting diode as claimed in claim 1, is characterized in that: between active area and the multilayer ohmic contact Rotating fields of compound, generate Second-Type limiting layer and current extending successively.
8. a kind of large scale light-emitting diode as claimed in claim 1, it is characterized in that: n district for generate Bragg reflecting layer on substrate, Bragg reflecting layer generates the first type limiting layer, and the first type limiting layer is connected with active layer, and the second electrode is created on substrate.
9. a kind of large scale light-emitting diode as claimed in claim 1, is characterized in that: between active area and the multilayer ohmic contact Rotating fields of compound, generate limiting layer and Second-Type conductive layer successively.
10. a kind of large scale light-emitting diode as claimed in claim 1, it is characterized in that: n district for generate involuntary doped layer on substrate, involuntary doped layer generates the first type conductive layer, and the first type conductive layer is connected with active layer, and the second electrode is created on the first type conductive layer.
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| CN201510652636.9A CN105226158A (en) | 2015-10-10 | 2015-10-10 | A kind of large scale light-emitting diode |
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| CN201510652636.9A CN105226158A (en) | 2015-10-10 | 2015-10-10 | A kind of large scale light-emitting diode |
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| CN105226158A true CN105226158A (en) | 2016-01-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108604622A (en) * | 2016-02-02 | 2018-09-28 | Lg 伊诺特有限公司 | Light-emitting component and light-emitting element package including light-emitting component |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH1084131A (en) * | 1996-09-05 | 1998-03-31 | Ricoh Co Ltd | Semiconductor light emitting element |
| CN102201508A (en) * | 2010-03-25 | 2011-09-28 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode chip and fabrication method thereof |
| CN102751410A (en) * | 2012-07-13 | 2012-10-24 | 合肥彩虹蓝光科技有限公司 | LED (Light Emitting Diode) chip provided with stepped current blocking structure and fabricating method thereof |
| CN104600164A (en) * | 2015-02-06 | 2015-05-06 | 扬州乾照光电有限公司 | Efficient current injection light-emitting diode and method for manufacturing same |
-
2015
- 2015-10-10 CN CN201510652636.9A patent/CN105226158A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1084131A (en) * | 1996-09-05 | 1998-03-31 | Ricoh Co Ltd | Semiconductor light emitting element |
| CN102201508A (en) * | 2010-03-25 | 2011-09-28 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode chip and fabrication method thereof |
| CN102751410A (en) * | 2012-07-13 | 2012-10-24 | 合肥彩虹蓝光科技有限公司 | LED (Light Emitting Diode) chip provided with stepped current blocking structure and fabricating method thereof |
| CN104600164A (en) * | 2015-02-06 | 2015-05-06 | 扬州乾照光电有限公司 | Efficient current injection light-emitting diode and method for manufacturing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108604622A (en) * | 2016-02-02 | 2018-09-28 | Lg 伊诺特有限公司 | Light-emitting component and light-emitting element package including light-emitting component |
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Application publication date: 20160106 |