CN110707193A - High-reliability LED chip and preparation method thereof - Google Patents
High-reliability LED chip and preparation method thereof Download PDFInfo
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- CN110707193A CN110707193A CN201910968373.0A CN201910968373A CN110707193A CN 110707193 A CN110707193 A CN 110707193A CN 201910968373 A CN201910968373 A CN 201910968373A CN 110707193 A CN110707193 A CN 110707193A
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- 238000002360 preparation method Methods 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 238000003892 spreading Methods 0.000 claims abstract description 40
- 230000007480 spreading Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 153
- 238000000034 method Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000013021 overheating Methods 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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Abstract
The invention discloses a high-reliability LED chip, which comprises: a substrate; the epitaxial layer is arranged on the substrate and comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer; a first electrode provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; and at least one first current spreading line disposed on the second semiconductor layer, the first current spreading line being electrically connected to the second electrode; the first current spreading line is electrically connected with the first semiconductor layer through a plurality of first holes which are formed in the epitaxial layer and penetrate through the first semiconductor layer. The first current expansion line is connected with the first semiconductor layer through the hole, so that the current expansion uniformity can be greatly improved, local current concentration is prevented from causing local overheating and burning the chip, and the reliability of the LED chip is improved.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a high-reliability LED chip and a preparation method thereof.
Background
Light emitting diode, abbreviated LED for english word, main meaning: compared with the traditional lighting device, the Light Emitting Diode has the advantages of long service life, high lighting effect, no radiation, low power consumption and environmental protection. At present, the LED is mainly used in the fields of display screens, indicator lamps, backlight sources and the like.
At present, the LED has been widely applied in the illumination field, and along with the expansion of the application field, the requirements for the characteristics of the LED product are increasingly raised; how to realize the unification of long service life, high reliability and high light efficiency is an urgent problem to be solved. One way to improve LED performance is to promote current expansion performance, such as in the LED chip disclosed in chinese patent CN104377282A, that is, current expansion strips are prepared on one side of the P electrode and the N electrode, which improves current expansion and improves reliability of the LED chip; however, the current spreading strips need to be integrally etched, so that the light-emitting area of the LED is reduced, and the lighting effect is reduced.
Disclosure of Invention
The invention aims to provide a high-reliability LED chip which is high in reliability and high in light efficiency.
The invention also aims to provide a preparation method of the LED chip with high reliability.
In order to solve the above technical problem, the present invention provides a highly reliable LED chip, which includes:
a substrate;
the epitaxial layer is arranged on the substrate and comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer;
a first electrode provided on the first semiconductor layer;
a second electrode provided on the second semiconductor layer; and
at least one first current spreading line disposed on the second semiconductor layer, the first current spreading line being electrically connected to the first electrode;
the first current spreading line is electrically connected with the first semiconductor layer through a plurality of first holes which are formed in the epitaxial layer and penetrate through the first semiconductor layer.
As an improvement of the above technical solution, the first holes are distributed between the second electrode and the first electrode, and the depth of the first holes increases from the second electrode to the first electrode.
As an improvement of the technical scheme, the depth of the first holes is 0.6-1.6 microns.
As an improvement of the technical scheme, the distance between the adjacent first holes is equal or unequal.
As an improvement of the above technical solution, the first current spreading line is electrically connected to the first semiconductor layer through 7 first holes with equal spacing; the depth of each first hole distributed from the second electrode to the first electrode is 0.8 +/-0.05 mu m, 0.9 +/-0.05 mu m, 1 +/-0.05 mu m, 1.1 +/-0.05 mu m, 1.2 +/-0.05 mu m, 1.3 +/-0.05 mu m and 1.4 +/-0.05 mu m in sequence.
As an improvement of the technical scheme, the epitaxial layer comprises an epitaxial buffer layer, a u-GaN layer, an N-GaN contact layer, a light emitting layer and a P-GaN layer which are sequentially arranged on the substrate;
and the doping concentration of Si in the N-GaN contact layer is greater than that of Si in the N-GaN layer.
As an improvement of the above technical solution, the method further comprises: a current spreading layer and an insulating protection layer; the current expansion layer is arranged on the second semiconductor layer; the insulating protection layer is arranged on the first semiconductor layer, the second semiconductor layer and the first hole.
As an improvement of the above technical solution, the current spreading layer is made of indium tin oxide; the insulating protective layer is made of SiO2And/or Si3N4Is made of a thickness of
As an improvement of the above technical solution, the display device further includes a second current spreading line electrically connected to the second electrode and extending from the second electrode to the first electrode.
Correspondingly, the invention also discloses a preparation method of the LED chip with high reliability, which comprises the following steps:
(1) providing a substrate;
(2) forming an epitaxial layer on the substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer;
(3) photoetching the epitaxial layer to form a plurality of first holes and second holes penetrating through the first semiconductor layer;
(4) forming a first electrode, a second electrode and a first current expansion line to obtain a high-reliability LED chip finished product; the first electrode is connected with the first semiconductor layer through a second hole, and the first current extension line is connected with the first semiconductor layer through a first hole.
The implementation of the invention has the following beneficial effects:
1. the current expansion line is connected with the semiconductor layer through the series of holes, and the LED chip is different from the traditional LED chip in that a strip area is formed, so that the etching area can be reduced, namely, the light-emitting area of the chip is increased, and the brightness of the chip is improved.
2. According to the current expansion line of the N electrode, the first hole is connected with the N-GaN layer, and the first hole is controlled to be arranged from shallow to deep, so that the current expansion uniformity can be greatly improved, the phenomena of local overheating and chip burning caused by local current concentration are avoided, and the reliability of an LED chip is improved.
3. The LED chip integrates the traditional current blocking layer and the passivation layer into a whole, reduces working procedures and reduces manufacturing cost.
Drawings
FIG. 1 is a schematic diagram of a high reliability LED chip according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a cross-sectional view taken along line B-B of FIG. 1;
FIG. 4 is a schematic diagram of a high reliability LED chip according to another embodiment of the present invention;
FIG. 5 is a schematic view of an epitaxial structure in a further embodiment of the invention;
FIG. 6 is a flow chart of a method for manufacturing a high-reliability LED chip according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings. It is only noted that the invention is intended to be limited to the specific forms set forth herein, including any reference to the drawings, as well as any other specific forms of embodiments of the invention.
Referring to fig. 1 to 3, the present embodiment provides a highly reliable LED chip, which includes a substrate 1; an epitaxial layer 2 disposed on the substrate 1, wherein the epitaxial layer 2 includes a first semiconductor layer 21, a light emitting layer 22 and a second semiconductor layer 23; a first electrode 3 provided on the first semiconductor layer 21; a second electrode 4 provided on the second semiconductor layer 23; and at least one first current spreading line 5 disposed on the second semiconductor layer 23, the first current spreading line 5 being electrically connected to the second electrode 4; the first current spreading line 5 is electrically connected to the first semiconductor layer 21 through a plurality of first holes 24 formed in the epitaxial layer 2 and penetrating through the first semiconductor layer 21. The first current expansion line 5 is connected with the first semiconductor layer 21 through the first holes, so that the current expansion performance can be improved, local overheating is prevented, the reliability of the LED chip is improved, meanwhile, the etching amount of the light emitting layer 22 can be reduced, and the brightness of the LED chip is improved.
Wherein, the epitaxial layer 2 is a GaN-based epitaxial layer, but is not limited thereto; the first semiconductor layer 21 is a Si-doped GaN layer, i.e., an N-GaN layer, the light-emitting layer 22 is an MQW layer, and the second semiconductor layer 23 is a Mg-doped GaN layer, i.e., a P-GaN layer, but is not limited thereto.
Specifically, in the present embodiment, the first extension line 5 is connected to the first semiconductor layer 21 through a plurality of first holes 24. The first holes 24 are distributed between the first electrode 3 and the second electrode 4, and the depth of the first holes 24 is increased from the second electrode 4 to the first electrode 3; the bottoms of the first holes 24 with different depths are located at different positions of the first semiconductor layer 21, the Si doping concentrations of the first semiconductor layer 21 at different positions are different, and the current spreading capability is also different. By adopting the first holes with the depth gradually increased from the second electrode 4 to the first electrode 3, a layered current expansion line can be formed according to the characteristics of current distribution of the LED chip, and the current expansion performance is greatly improved.
Specifically, the depth of the first holes 24 is 0.6 to 1.6 μm, preferably 0.8 to 1.5 μm; the cross-sectional shape of the first hole 24 is circular, square, oval or star-shaped, but is not limited thereto.
Specifically, the distances between adjacent first holes 24 are equal or unequal, and preferably, the distances between adjacent first holes 24 are equal, that is, the distances between the first holes 24 are uniformly distributed on the epitaxial layer 2.
Preferably, in the preferred embodiment of the present invention, the LED chip is provided with a first current spreading line 5, which is electrically connected to the first semiconductor layer 21 through 7 first holes 24 uniformly distributed at intervals; the depth of each first hole distributed from the second electrode to the first electrode is 0.8 +/-0.05 mu m, 0.9 +/-0.05 mu m, 1 +/-0.05 mu m, 1.1 +/-0.05 mu m, 1.2 +/-0.05 mu m, 1.3 +/-0.05 mu m and 1.4 +/-0.05 mu m in sequence. The first extension line has better current extension effect.
Referring to fig. 2 to 3, in the present embodiment, the LED chip further includes a current spreading layer 6 and an insulating protection layer 7; wherein, the current spreading layer 6 is made of ITO (indium tin oxide) or IZO (indium zinc oxide), but is not limited thereto; the current spreading layer 6 can further improve the uniformity of current spreading. The thickness of the current spreading layer 6 is
Preferably, it is
Wherein the insulating protective layer 7 is made of SiO2And/or Si3N4Is made of an insulating protective layer 7 having a thickness of
Specifically, in the present embodiment, the current spreading layer 6 is distributed on the second semiconductor layer 23; the insulating protection layer 7 is arranged in the current expansion layer 6, the first semiconductor layer 21 and the first hole 24, and exposes the first electrode 3 and the second electrode 4; the insulating protection layer 7 may protect the entire chip structure. In a general LED chip structure, a current blocking layer is arranged between an ITO layer and a P-GaN layer below a P electrode; a current blocking layer is also arranged between the N electrode and the N-GaN layer; meanwhile, a passivation layer is arranged on the surface of the chip; the current barrier layer can prevent current from directly flowing into the semiconductor layer from the electrode region and promote the diffusion of the current; in the invention, the current spreading strip promotes the current diffusion, so that a current blocking layer is not required to be arranged, and the production process is simplified.
Specifically, in the present embodiment, the first electrode 3 is electrically connected to the first semiconductor layer 21 through the second hole 25 formed in the epitaxial layer 2; the depth of the second holes 25 is 1.4-2 μm, preferably 1.5 + -0.05 μm; the width of the second hole is 3-10 μm, preferably 3-8 μm; the cross-sectional shape of the second hole 25 is circular, elliptical, star-shaped, or square, but is not limited thereto. The first electrode 3 and the second electrode 4 are formed by one of electron beam evaporation, thermal evaporation, and magnetron sputtering.
Referring to fig. 4, in another embodiment of the present invention, a plurality of second current spreading lines 8 are further included, which are electrically connected to the second electrodes. The second current spreading line 8 is provided on the surface of the second semiconductor layer 23 and extends from the second electrode 5 toward the first electrode 4. The second current spreading line can further improve the current spreading function of the chip in the invention.
Referring to fig. 5, in still another embodiment of the present invention, the epitaxial layer 2 includes an epitaxial buffer layer 26, a u-GaN layer 27, an N-GaN layer 21, an N-GaN contact layer 28, a light emitting layer 22, and a P-GaN layer, which are sequentially provided on the substrate 1; wherein, the N-GaN layer 21 and the N-GaN contact layer 28 are both silicon-doped GaN layers; the doping concentration of Si in the N-GaN contact layer 28 is greater than that of Si in the N-GaN layer 21; the N-GaN contact layer 28 can reduce the voltage and solve the problem of the increase in voltage caused by the current spreading layer 6, the first current spreading line 5, and the second current spreading line 8.
Correspondingly, referring to fig. 6, the embodiment also discloses a method for manufacturing the LED chip, which includes the following steps:
s1: providing a substrate;
the substrate may be sapphire, but is not limited thereto.
S2: forming an epitaxial layer on a substrate;
s3: photoetching the epitaxial layer to form a plurality of first holes penetrating through the first semiconductor layer;
specifically, S3 includes:
s31: photoetching the epitaxial layer to form a plurality of first holes penetrating through the first semiconductor layer;
specifically, a yellow light is used for patterning, and then a plurality of first holes with sequentially increased depths are etched by adopting dry etching;
s32: photoetching the epitaxial layer to form a second hole penetrating through the first semiconductor layer;
s33: forming a current spreading layer on the surface of the second semiconductor layer;
specifically, a current spreading layer may be formed on the second semiconductor layer using a magnetron sputtering method.
S34: forming an insulating protection layer, and opening holes in the electrode area and the current expansion line area;
s4: and forming a first electrode, a second electrode and a first current expansion line to obtain a high-reliability LED chip finished product.
Specifically, one of electron beam evaporation, thermal evaporation and magnetron sputtering may be used for evaporation to form the first electrode, the second electrode and the first current spreading line.
Preferably, the method for preparing the LED chip of the present invention further comprises the following steps:
s5: grinding and thinning the substrate, carrying out laser scratch, splitting, and carrying out point measurement and sorting.
Wherein, the scratching operation is carried out by 355nm or 1046nm laser.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A highly reliable LED chip, comprising:
a substrate;
the epitaxial layer is arranged on the substrate and comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer;
a first electrode provided on the first semiconductor layer;
a second electrode provided on the second semiconductor layer; and
at least one first current spreading line disposed on the second semiconductor layer, the first current spreading line being electrically connected to the first electrode;
the first current spreading line is electrically connected with the first semiconductor layer through a plurality of first holes which are formed in the epitaxial layer and penetrate through the first semiconductor layer.
2. The high reliability LED chip of claim 1 wherein said first holes are distributed between said second electrode and said first electrode, said first holes having a depth that increases from said second electrode to said first electrode.
3. The highly reliable LED chip as claimed in claim 1 or 2, wherein the depth of the first hole is 0.6-1.6 μm.
4. The high reliability LED chip of claim 1, wherein the spacing between adjacent first holes is equal or unequal.
5. The high reliability LED chip of claim 1 wherein said first current spreading line is electrically connected to said first semiconductor layer through 7 first holes of equal spacing; the depth of each first hole distributed from the second electrode to the first electrode is 0.8 +/-0.05 mu m, 0.9 +/-0.05 mu m, 1 +/-0.05 mu m, 1.1 +/-0.05 mu m, 1.2 +/-0.05 mu m, 1.3 +/-0.05 mu m and 1.4 +/-0.05 mu m in sequence.
6. The high-reliability LED chip according to claim 1, wherein the epitaxial layer comprises an epitaxial buffer layer, a u-GaN layer, an N-GaN contact layer, a light emitting layer and a P-GaN layer sequentially provided on the substrate;
and the doping concentration of Si in the N-GaN contact layer is greater than that of Si in the N-GaN layer.
7. The highly reliable LED chip according to claim 1, further comprising: a current spreading layer and an insulating protection layer; the current expansion layer is arranged on the second semiconductor layer; the insulating protection layer is arranged on the first semiconductor layer, the second semiconductor layer and the first hole.
8. The high-reliability LED chip according to claim 1, wherein the current spreading layer is made of indium tin oxide; the insulating protective layer is made of SiO2And/or Si3N4Is made of a thickness of
9. The high reliability LED chip of claim 1 further comprising a second current spreading line electrically connected to said second electrode and extending from said second electrode to said first electrode.
10. The method for manufacturing a highly reliable LED chip according to any one of claims 1 to 9, comprising:
(1) providing a substrate;
(2) forming an epitaxial layer on the substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer;
(3) photoetching the epitaxial layer to form a plurality of first holes and second holes penetrating through the first semiconductor layer;
(4) forming a first electrode, a second electrode and a first current expansion line to obtain a high-reliability LED chip finished product; the first electrode is connected with the first semiconductor layer through a second hole, and the first current extension line is connected with the first semiconductor layer through a first hole.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070090377A1 (en) * | 2005-10-20 | 2007-04-26 | Epistar Corporation | Light emitting device and method of forming the same |
| CN109545934A (en) * | 2018-12-20 | 2019-03-29 | 湘能华磊光电股份有限公司 | Pore type LED electrode structure and preparation method thereof |
| CN210805813U (en) * | 2019-10-12 | 2020-06-19 | 佛山市国星半导体技术有限公司 | LED chip of high reliability |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070090377A1 (en) * | 2005-10-20 | 2007-04-26 | Epistar Corporation | Light emitting device and method of forming the same |
| CN109545934A (en) * | 2018-12-20 | 2019-03-29 | 湘能华磊光电股份有限公司 | Pore type LED electrode structure and preparation method thereof |
| CN210805813U (en) * | 2019-10-12 | 2020-06-19 | 佛山市国星半导体技术有限公司 | LED chip of high reliability |
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